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A10/AP

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: , AY11 AY0 to AY9 Note A10 (AP) (input pin) A10n is sampled during a precharge command to , L L H L L H H L L Address x x BA,CA,A10(AP) BA,CA,A10(AP) BA,CA,A10(AP) BA,CA,A10(AP) BA,RA BA,A10(AP) A10(AP) x x BA,MRS-OPCODE BA,EMRS-OPCODE x x BA,CA,A10(AP) BA,CA,A10(AP) BA,CA,A10(AP) BA,CA,A10(AP) BA,RA BA,A10(AP) A10(AP) x x BA,MRS-OPCODE BA,EMRS-OPCODE x x BA,CA,A10(AP) BA,CA,A10(AP) BA,CA,A10(AP) BA,CA,A10(AP) BA,RA BA,A10(AP) A10(AP) X x BA Deutron Electronics
Original
P3R12E2GEU/F P3R12E3GEU/F P3R12E2/3GE/U
Abstract: AX12 AX0 to AX12 Column address AY0 to AY9, AY11, AY12 AY0 to AY9, AY11 A10 (AP) (input pin) A10 is , L × H Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA WRIT WRITA ACT PRE PALL REF SELF MRS EMRS DESL NOP , , MRS-OPCODE BA, EMRS-OPCODE 2 2 2 2 × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 , L L L × H L L L L H H H L L L L H H L L × H H H L L H L L H H L L H H H H H 1 Pr BA, A10 (AP Elpida Memory
Original
EDE5104GASA EDE5108GASA EDE5104GA EDE5108GA E0203E40 M01E0107

QDD1

Abstract: *Note 2,3 *Note 2,3 BA0 ~ BA1 BS BS BS A10/AP Ra BS *Note 3 *Note 3 , auto precharge function are controlled by A10/AP in read/write command A10/AP BA0 BA1 Operation , 0 1 Enable auto precharge, precharge bank D at end of burst. 4. A10/AP and BA0~BA1 control bank precharge when precharge command is asserted. A10/AP BA0 BA1 Precharge 0 0 0 0 , tRCD RAS *Note 2 CAS ADDR Ra Ca Rb Cb BA0 BA1 A10/AP Ra Rb tOH CL
Samsung Electronics
Original
QDD1

512MB SDR SDRAM CHIP

Abstract: /AP ~ An and BA0 ~ BA1. The write burst length is programmed using A9. A7 ~ A8, A10/AP ~ An and BA0 , active bank by asserting low on CS, RAS, WE and A10/AP with valid BA0 ~ BA1 of the bank to be , high on A10/AP. If burst read or burst write by asserting high on A10/AP, the bank is left active , L X X ILLEGAL 2 L H L X BA CA, A10/AP ILLEGAL 2 L L H H BA RA L L H L BA A10/AP L IDLE X L L L H X X Row
Samsung Electronics
Original
512MB SDR SDRAM CHIP A10/AP

EDE1104ABSE

Abstract: Device Name 23 330 A1 6C Note Column address AY0 to AY9 1 Note: 1. A13 pin is NC for × 16 organization. A10 (AP , NOP Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 1 L L H H BA, RA ACT Row activating L L H L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge
Elpida Memory
Original
EDE1104ABSE EDE1108ABSE EDE1116ABSE Device Name 23 330 A1 6C EMRS-2 EDE1104ABSE-8E-E EDE1104/1108ABSE
Abstract: address AY0 to AY9 AY0 to AY8 A10 (AP) (input pin) A10 is sampled during a precharge command to , × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP , (Ver. 3.1) 2 2 2 2 BA, MRS-OPCODE BA, EMRS-OPCODE BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA Pr WRITA ACT BA, A10 (AP) A10 (AP) Begin Write 1 ILLEGAL , , CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) BA Elpida Memory
Original
EDE2508ABSE-GE EDE2516ABSE-GE E0657E31 EDE2508ABSE EDE2516

EDE5104AESK

Abstract: EDE5104AESK-4A-E AX13 AY0 to AY9, AY11 EDE5108AESK AX0 to AX13 Note AY0 to AY9 A10 (AP) (input pin , NOP Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 1 L L H H BA, RA ACT Row activating L L H L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge
Elpida Memory
Original
EDE5104AESK EDE5104AESK-4A-E EDE5104AESK-5C-E EDE5104AESK-6E-E EDE5108AESK-5C-E EDE5108AESK-6E-E E0562E61

EDE5104AGSE-4A-E

Abstract: EDE5104AGSE-5C-E Note AY0 to AY9 A10 (AP) (input pin) A10 is sampled during a precharge command to determine , Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP , BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge all banks L , L H H H × NOP Nop L H L H BA, CA, A10 (AP) READ Begin Read
Elpida Memory
Original
EDE5104AGSE EDE5108AGSE EDE5104AGSE-4A-E EDE5104AGSE-5C-E EDE5104AGSE-6C-E EDE5104AGSE-6E-E EDE5108AGSE-6C-E E0715E20
Abstract: A10 (AP) (input pin) A10 is sampled during a precharge command to determine whether the precharge , × H H H L L H L L H H L L Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA WRIT WRITA ACT PRE PALL REF SELF , × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP Elpida Memory
Original
EDE1104AASE EDE1108AASE E0404E40

EDE5104ABSE

Abstract: EDE5104ABSE-4A-E 1 Note: 1. A13 pin is NC for ×16 organization. A10 (AP) (input pin) A10 is sampled during a , NOP Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 1 L L H H BA, RA ACT Row activating L L H L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge
Elpida Memory
Original
EDE5104ABSE EDE5108ABSE EDE5116ABSE EDE5104ABSE-4A-E EDE5104ABSE-5C-E EDE5108ABSE-4A-E EDE5108ABSE-5C-E E0323E91

EDE2516ABSE-GE

Abstract: EDE2516ABSE-GE-E EDE2516ABSE AX0 to AX12 AY0 to AY8 A10 (AP) (input pin) A10 is sampled during a precharge command to , Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA , (AP) PRE Precharge L L H L A10 (AP) PALL Precharge all banks L L L , H × NOP Nop L H L H BA, CA, A10 (AP) READ Begin Read L H L
Elpida Memory
Original
EDE2516ABSE-GE-E DDR2-800 EDE2508ABSE-GE-E
Abstract: address AX0 to AX12 AX0 to AX12 Column address AY0 to AY9 AY0 to AY8 A10 (AP) (input pin) A10 is , Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 , 1 1 1 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE 2 2 2 2 × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP Elpida Memory
Original
E0573E40

DDR2-533

Abstract: DDR2-667 Column address EDE5116AFSE AX0 to AX12 Note AY0 to AY9 A10 (AP) (input pin) A10 is , NOP Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 1 L L H H BA, RA ACT Row activating L L H L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge
Elpida Memory
Original
DDR2-533 DDR2-667 EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E DDR2-400 E0705E20

DDR2-667

Abstract: address L EDE5108AB Address (A0 to A13) AX0 to AX13 Note AY0 to AY9 A10 (AP) (input , Operation × DESL Nop or Power down × NOP Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 L EO Current , L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge all banks
Elpida Memory
Original
EDE5108ABSE-BE E0540E11

ede2508abse-5c-e

Abstract: address AX0 to AX12 AX0 to AX12 Column address AY0 to AY9 AY0 to AY8 A10 (AP) (input pin) A10 is , × H H H L L H L L H H L L Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA WRIT WRITA ACT PRE PALL REF SELF , × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP
Elpida Memory
Original
ede2508abse-5c-e E0573E21
Abstract: AY9 AY0 to AY9 1 Note Note: 1. A13 pin is NC for × 16 organization. A10 (AP) (input pin) A10 is , L L H L L H H L L × H H H L L H L L H H L L Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA WRIT WRITA ACT , × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP Elpida Memory
Original
E0852E10

EDE1108AASE

Abstract: EDE1108AASE-5C-E EDE1108AASE AX0 to AX13 Notes Column address AY0 to AY9 A10 (AP) (input pin) A10 is sampled , , CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 1 L L H H BA, RA ACT Row activating L L H L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge all banks L L L H × REF
Elpida Memory
Original
EDE1108AASE-5C-E EDE1108AASE-6E-E EDE1104AASE-4A-E EDE1104AASE-5C-E EDE1104AASE-6E-E E0404E20
Abstract: to AX13 Column address AY0 to AY9, AY11 AY0 to AY9 Note A10 (AP) (input pin) A10 is sampled during , L H H L L × H H H L L H L L H H L L × H H H L L H L L H H L L Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA , BA, EMRS-OPCODE 2 2 2 2 × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA Elpida Memory
Original
E0562E40
Abstract: (AP) (input pin) A10 is sampled during a precharge command to determine whether the precharge applies , H L L × H H H L L H L L H H L L Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA WRIT WRITA ACT PRE PALL REF , × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP Elpida Memory
Original
EDE5108AGBG E0917E10

rca ca 3079

Abstract: RCA 3079 RAS CS NC BA0 BA1 A10/AP A0 A1 A2 DQM2 VCC NC DQ16 VSSQ DQ17 DQ18 VCCQ DQ19 DQ20 , 3. A10/AP A10/AP BA0 BA1 0 0 0 A 1 0 0 A 0 1 0 , 1 D 4. A10/APBA0BA1 A10/AP BA0 BA1 0 0 0 A 0 1 0 B , CAS WE ADDRESS BA0, 1 A10/AP A9A0 H X X X X NOP L H H H , tAH BA0 BA1 A10 /AP RAa ADD RAa RDa CAa tCMS DQM 03 DQ CAb tAC tOH
OKI Electric Industry
Original
MS82V48540 MS82V48540-7 MS82V48540-8 rca ca 3079 RCA 3079 FJDS82V48540-01 216-W 536-R 256-C TSOPIITSOPII86-P-400-0

EDE5104ABSE

Abstract: EDE5104ABSE-4A-E 1 Note: 1. A13 pin is NC for ×16 organization. A10 (AP) (input pin) A10 is sampled during a , NOP Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 1 L L H H BA, RA ACT Row activating L L H L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge
Elpida Memory
Original
E0323E90

DDR2-400

Abstract: DDR2-533 address L EDE5116AFSE Address (A0 to A12) AX0 to AX12 Note AY0 to AY9 A10 (AP) (input , Operation × DESL Nop or Power down × NOP Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 L EO Current , L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge all banks
Elpida Memory
Original
E0705E51
Abstract: to AY9, AY11 AY0 to AY9 AY0 to AY9 1 Notes Notes: 1. A13 pin is NC for ×16 organization. A10 (AP , H L L Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA WRIT WRITA ACT PRE PALL REF SELF MRS EMRS DESL NOP , ILLEGAL Notes 1 1 1 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE 2 2 2 2 × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA Elpida Memory
Original
EDE5104ABSA EDE5108ABSA EDE5116ABSA EDE5104AB EDE5116AB E0323E10

E5116

Abstract: DDR2-400 Column address EDE5116AFSE AX0 to AX12 Note AY0 to AY9 A10 (AP) (input pin) A10 is , NOP Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 1 L L H H BA, RA ACT Row activating L L H L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge
Elpida Memory
Original
E5116

EDE2516ABSE

Abstract: ede2508abse-5c-e to AY8 A10 (AP) (input pin) A10 is sampled during a precharge command to determine whether the , Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA , (AP) PRE Precharge L L H L A10 (AP) PALL Precharge all banks L L L , H × NOP Nop L H L H BA, CA, A10 (AP) READ Begin Read L H L
Elpida Memory
Original
E0573E41
Abstract: Row address AX0 to AX13 Column address AY0 to AY9 Note A10 (AP) (input pin) A10 is sampled during a , H L L × H H H L L H L L H H L L Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA WRIT WRITA ACT PRE PALL REF , × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP Elpida Memory
Original
E0540E10
Abstract: pin is NC for ×16 organization. A10 (AP) (input pin) A10 is sampled during a precharge command to , BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP , 1 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE 2 2 2 2 × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP Elpida Memory
Original
E0323E40

EDE5104AGSE

Abstract: EDE5104AGSE-4A-E Note AY0 to AY9 A10 (AP) (input pin) A10 is sampled during a precharge command to determine , Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP , BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge all banks L , L H H H × NOP Nop L H L H BA, CA, A10 (AP) READ Begin Read
Elpida Memory
Original
E0715E31
Abstract: H L L × H H H L L H L L H H L L Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA WRIT WRITA ACT PRE PALL REF , × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1, 4 1, 4 1 1 1 1 × × BA, MRS-OPCODE BA Elpida Memory
Original
E0705E10
Abstract: to AY9 AY0 to AY8 A10 (AP) (input pin) A10 is sampled during a precharge command to determine , L L H L L H H L L × H H H L L H L L H H L L Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA WRIT WRITA ACT , × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP Elpida Memory
Original
E0657E30
Abstract: VIEW) VDD DQ0 DQ1 VSSQ DQ2 DQ3 VDDQ DQ4 DQ5 VSSQ DQ6 DQ7 VDDQ LDQM WE CAS RAS CS BA A10/AP A0 A1 A2 A3 , the device. CKE Clock Enable A0 ~ A10/AP BA RAS CAS WE L(U)DQM DQ0 ~ 15 VDD/VSS VDDQ/VSSQ N.C , Refresh Exit L H H CKEn-1 CKEn CS RAS CAS WE DQM BA CMOS SDRAM A10/AP A9~ A0 Note H H X H L H X , , L=Logic Low) Note : 1. OP Code : Operand Code A0 ~ A10/AP, BA : Program keys. (@MRS) 2. MRS can be , "High" at read, write, row active and precharge, bank B is selected. If A10/AP is "High" at row precharge Samsung Electronics
Original
K4S161622E-TI/E 2K/32 K4S161622E K4S161622E-TI/E50 K4S161622E-TI/E55 K4S161622E-TI/E60

EDE5104GBSA

Abstract: EDE5104GBSA-5A-E for ×16 organization. A10 (AP) (input pin) A10 is sampled during a precharge command to determine , × NOP Nop or Power down L H L H BA, CA, A10 (AP) READ ILLEGAL 1 L H L H BA, CA, A10 (AP) READA ILLEGAL 1 L H L L BA, CA, A10 (AP) WRIT ILLEGAL 1 L H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 L L H H BA, RA ACT Row activating L L H L BA, A10 (AP) PRE Precharge L
Elpida Memory
Original
EDE5104GBSA EDE5108GBSA EDE5116GBSA EDE5104GBSA-5A-E EDE5104GB EDE5108GB E0249E30

DDR2-800

Abstract: EDE2508ABSE-GE EDE2516ABSE AX0 to AX12 AY0 to AY8 A10 (AP) (input pin) A10 is sampled during a precharge command to , Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA , (AP) PRE Precharge L L H L A10 (AP) PALL Precharge all banks L L L , H × NOP Nop L H L H BA, CA, A10 (AP) READ Begin Read L H L
Elpida Memory
Original
E0657E20
Showing first 20 results.