Top Results
| Part | Manufacturer | Description | Datasheet | BUY |
|---|---|---|---|---|
| V175LA10APX1347 | Littelfuse Inc | Varistor, 225V, 55J, Through Hole Mount, RADIAL LEADED, HALOGEN FREE AND ROHS COMPLIANT |  |
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| V130LA10APX2855 | Littelfuse Inc | Varistor, 175V, 38J, Through Hole Mount, RADIAL LEADED, HALOGEN FREE AND ROHS COMPLIANT | |
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| V150LA10AP | Littelfuse Inc | Varistor, 200V, 45J, Through Hole Mount, RADIAL LEADED, HALOGEN FREE AND ROHS COMPLIANT | |
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| V140LA10AP | Littelfuse Inc | Varistor, 180V, 42J, Through Hole Mount, RADIAL LEADED, HALOGEN FREE AND ROHS COMPLIANT | |
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| V175LA10AP | Littelfuse Inc | Varistor, 225V, 55J, Through Hole Mount, RADIAL LEADED, HALOGEN FREE AND ROHS COMPLIANT | |
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| V130LA10APX1347 | Littelfuse Inc | Varistor, 175V, 38J, Through Hole Mount, RADIAL LEADED, HALOGEN FREE AND ROHS COMPLIANT | |
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| Part : G2278A10AP | Supplier : Glenair | Manufacturer : Avnet | Stock : - | Best Price : - | Price Each : - |
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| Part : TLGH-DA-TA10A-PW-B/12V | Supplier : Carling Technologies | Manufacturer : Avnet | Stock : - | Best Price : $3.69 | Price Each : $6.59 |
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| Part : V140LA10AP | Supplier : Littelfuse | Manufacturer : Newark element14 | Stock : 996 | Best Price : $0.2040 | Price Each : $0.61 |
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| Part : V150LA10AP | Supplier : Littelfuse | Manufacturer : Newark element14 | Stock : 2,583 | Best Price : $0.2040 | Price Each : $0.61 |
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| Part : V175LA10AP | Supplier : Littelfuse | Manufacturer : Newark element14 | Stock : 1,536 | Best Price : $0.2040 | Price Each : $0.61 |
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| Part : V175LA10AP | Supplier : Littelfuse | Manufacturer : Newark element14 | Stock : 383 | Best Price : $0.2040 | Price Each : $0.61 |
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| Part : V130LA10AP | Supplier : Littelfuse | Manufacturer : Allied Electronics & Automation | Stock : 2,486 | Best Price : $0.34 | Price Each : $0.45 |
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| Part : V140LA10AP | Supplier : Littelfuse | Manufacturer : Allied Electronics & Automation | Stock : 686 | Best Price : $0.43 | Price Each : $0.57 |
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| Part : V150LA10AP | Supplier : Littelfuse | Manufacturer : Allied Electronics & Automation | Stock : 1,229 | Best Price : $0.43 | Price Each : $0.57 |
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| Part : V175LA10A-P | Supplier : Littelfuse | Manufacturer : Allied Electronics & Automation | Stock : 1,183 | Best Price : $0.46 | Price Each : $0.60 |
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| Part : V130LA10AP | Supplier : Littelfuse | Manufacturer : Future Electronics | Stock : 701 | Best Price : $0.2050 | Price Each : $0.2550 |
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| Part : V140LA10AP | Supplier : Littelfuse | Manufacturer : Future Electronics | Stock : 3,900 | Best Price : $0.1940 | Price Each : $0.2350 |
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| Part : V150LA10AP | Supplier : Littelfuse | Manufacturer : Future Electronics | Stock : 23,644 | Best Price : $0.2050 | Price Each : $0.25 |
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| Part : V150LA10APX10 | Supplier : Littelfuse | Manufacturer : Future Electronics | Stock : - | Best Price : $0.1920 | Price Each : $0.2150 |
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| Part : V175LA10AP | Supplier : Littelfuse | Manufacturer : Future Electronics | Stock : 2,541 | Best Price : $0.21 | Price Each : $0.2550 |
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| Part : V150LA10APX2855 | Supplier : Littelfuse | Manufacturer : America II Electronics | Stock : 9,800 | Best Price : - | Price Each : - |
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| Part : V130LA10AP | Supplier : Littelfuse | Manufacturer : Bristol Electronics | Stock : 70 | Best Price : - | Price Each : - |
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| Part : V130LA10AP | Supplier : Littelfuse | Manufacturer : Bristol Electronics | Stock : 59 | Best Price : - | Price Each : - |
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| Part : V150LA10AP | Supplier : Littelfuse | Manufacturer : Bristol Electronics | Stock : 69 | Best Price : - | Price Each : - |
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| Part : V175LA10AP | Supplier : Littelfuse | Manufacturer : Bristol Electronics | Stock : 14 | Best Price : - | Price Each : - |
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| Part : V130LA10AP | Supplier : Littelfuse | Manufacturer : RS Components | Stock : 7,690 | Best Price : £0.2320 | Price Each : £0.5940 |
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| Part : V150LA10AP | Supplier : Littelfuse | Manufacturer : RS Components | Stock : 4,735 | Best Price : £0.1740 | Price Each : £0.3520 |
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| Part : V175LA10AP | Supplier : Littelfuse | Manufacturer : RS Components | Stock : 1,965 | Best Price : £0.46 | Price Each : £0.46 |
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| Part : V130LA10AP | Supplier : Littelfuse | Manufacturer : ComSIT | Stock : 5,600 | Best Price : - | Price Each : - |
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| Part : V150LA10AP | Supplier : Littelfuse | Manufacturer : ComSIT | Stock : 700 | Best Price : - | Price Each : - |
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| Part : V150LA10APX1347 | Supplier : Littelfuse | Manufacturer : ComSIT | Stock : 19,600 | Best Price : - | Price Each : - |
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| Part : V130LA10AP | Supplier : Littelfuse | Manufacturer : Chip1Stop | Stock : 9,908 | Best Price : $0.3977 | Price Each : $0.3977 |
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| Part : V130LA10APX2855 | Supplier : Littelfuse | Manufacturer : Chip1Stop | Stock : 1,562 | Best Price : $0.4996 | Price Each : $0.4996 |
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| Part : V140LA10AP | Supplier : Littelfuse | Manufacturer : Chip1Stop | Stock : 940 | Best Price : $0.1180 | Price Each : $0.1180 |
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| Part : V150LA10AP | Supplier : Littelfuse | Manufacturer : Chip1Stop | Stock : 7,875 | Best Price : $1.25 | Price Each : $1.25 |
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| Part : V150LA10APX1347 | Supplier : Littelfuse | Manufacturer : Chip1Stop | Stock : 8,400 | Best Price : $1.33 | Price Each : $1.33 |
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| Part : V175LA10AP | Supplier : Littelfuse | Manufacturer : Chip1Stop | Stock : 1,490 | Best Price : $0.4904 | Price Each : $0.4904 |
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| Part : V130LA10AP | Supplier : Littelfuse | Manufacturer : element14 Asia-Pacific | Stock : 4,400 | Best Price : $0.25 | Price Each : $0.4760 |
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| Part : V150LA10AP | Supplier : Littelfuse | Manufacturer : element14 Asia-Pacific | Stock : 2,510 | Best Price : $0.21 | Price Each : $0.3940 |
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| Part : V175LA10AP | Supplier : Littelfuse | Manufacturer : element14 Asia-Pacific | Stock : 383 | Best Price : $0.25 | Price Each : $0.4760 |
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| Part : V130LA10AP | Supplier : Littelfuse | Manufacturer : Farnell element14 | Stock : 4,303 | Best Price : £0.2130 | Price Each : £0.5410 |
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| Part : V140LA10AP | Supplier : Littelfuse | Manufacturer : Farnell element14 | Stock : 48 | Best Price : £0.1040 | Price Each : £0.1040 |
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| Part : V150LA10AP | Supplier : Littelfuse | Manufacturer : Farnell element14 | Stock : 2,583 | Best Price : £0.19 | Price Each : £0.37 |
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| Part : V175LA10AP | Supplier : Littelfuse | Manufacturer : Farnell element14 | Stock : 1,510 | Best Price : £0.3680 | Price Each : £0.46 |
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| Part : V130LA10AP | Supplier : Littelfuse | Manufacturer : New Advantage | Stock : 480 | Best Price : $0.2706 | Price Each : $0.2875 |
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| Part : V140LA10AP | Supplier : Littelfuse | Manufacturer : New Advantage | Stock : 5,220 | Best Price : $0.2765 | Price Each : $0.2938 |
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| Part : V150LA10AP | Supplier : Littelfuse | Manufacturer : New Advantage | Stock : 36,684 | Best Price : $0.2941 | Price Each : $0.3125 |
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| Part : V175LA10AP | Supplier : Littelfuse | Manufacturer : New Advantage | Stock : 2,033 | Best Price : $0.30 | Price Each : $0.3188 |
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Shipping cost not included. Currency conversions are estimated. |
A10/AP
| Catalog Datasheet | MFG & Type | Document Tags | |
|---|---|---|---|
| Abstract: , AY11 AY0 to AY9 Note A10 (AP) (input pin) A10n is sampled during a precharge command to , L L H L L H H L L Address x x BA,CA,A10(AP) BA,CA,A10(AP) BA,CA,A10(AP) BA,CA,A10(AP) BA,RA BA,A10(AP) A10(AP) x x BA,MRS-OPCODE BA,EMRS-OPCODE x x BA,CA,A10(AP) BA,CA,A10(AP) BA,CA,A10(AP) BA,CA,A10(AP) BA,RA BA,A10(AP) A10(AP) x x BA,MRS-OPCODE BA,EMRS-OPCODE x x BA,CA,A10(AP) BA,CA,A10(AP) BA,CA,A10(AP) BA,CA,A10(AP) BA,RA BA,A10(AP) A10(AP) X x BA |
Deutron Electronics Original |
|
P3R12E2GEU/F P3R12E3GEU/F P3R12E2/3GE/U |
| Abstract: AX12 AX0 to AX12 Column address AY0 to AY9, AY11, AY12 AY0 to AY9, AY11 A10 (AP) (input pin) A10 is , L × H Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA WRIT WRITA ACT PRE PALL REF SELF MRS EMRS DESL NOP , , MRS-OPCODE BA, EMRS-OPCODE 2 2 2 2 × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 , L L L × H L L L L H H H L L L L H H L L × H H H L L H L L H H L L H H H H H 1 Pr BA, A10 (AP |
Elpida Memory Original |
|
EDE5104GASA EDE5108GASA EDE5104GA EDE5108GA E0203E40 M01E0107 |
QDD1Abstract: *Note 2,3 *Note 2,3 BA0 ~ BA1 BS BS BS A10/AP Ra BS *Note 3 *Note 3 , auto precharge function are controlled by A10/AP in read/write command A10/AP BA0 BA1 Operation , 0 1 Enable auto precharge, precharge bank D at end of burst. 4. A10/AP and BA0~BA1 control bank precharge when precharge command is asserted. A10/AP BA0 BA1 Precharge 0 0 0 0 , tRCD RAS *Note 2 CAS ADDR Ra Ca Rb Cb BA0 BA1 A10/AP Ra Rb tOH CL |
Samsung Electronics Original |
|
QDD1 |
512MB SDR SDRAM CHIPAbstract: /AP ~ An and BA0 ~ BA1. The write burst length is programmed using A9. A7 ~ A8, A10/AP ~ An and BA0 , active bank by asserting low on CS, RAS, WE and A10/AP with valid BA0 ~ BA1 of the bank to be , high on A10/AP. If burst read or burst write by asserting high on A10/AP, the bank is left active , L X X ILLEGAL 2 L H L X BA CA, A10/AP ILLEGAL 2 L L H H BA RA L L H L BA A10/AP L IDLE X L L L H X X Row |
Samsung Electronics Original |
|
512MB SDR SDRAM CHIP A10/AP |
EDE1104ABSEAbstract: Device Name 23 330 A1 6C Note Column address AY0 to AY9 1 Note: 1. A13 pin is NC for × 16 organization. A10 (AP , NOP Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 1 L L H H BA, RA ACT Row activating L L H L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge |
Elpida Memory Original |
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EDE1104ABSE EDE1108ABSE EDE1116ABSE Device Name 23 330 A1 6C EMRS-2 EDE1104ABSE-8E-E EDE1104/1108ABSE |
| Abstract: address AY0 to AY9 AY0 to AY8 A10 (AP) (input pin) A10 is sampled during a precharge command to , × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP , (Ver. 3.1) 2 2 2 2 BA, MRS-OPCODE BA, EMRS-OPCODE BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA Pr WRITA ACT BA, A10 (AP) A10 (AP) Begin Write 1 ILLEGAL , , CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) BA |
Elpida Memory Original |
|
EDE2508ABSE-GE EDE2516ABSE-GE E0657E31 EDE2508ABSE EDE2516 |
EDE5104AESKAbstract: EDE5104AESK-4A-E AX13 AY0 to AY9, AY11 EDE5108AESK AX0 to AX13 Note AY0 to AY9 A10 (AP) (input pin , NOP Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 1 L L H H BA, RA ACT Row activating L L H L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge |
Elpida Memory Original |
|
EDE5104AESK EDE5104AESK-4A-E EDE5104AESK-5C-E EDE5104AESK-6E-E EDE5108AESK-5C-E EDE5108AESK-6E-E E0562E61 |
EDE5104AGSE-4A-EAbstract: EDE5104AGSE-5C-E Note AY0 to AY9 A10 (AP) (input pin) A10 is sampled during a precharge command to determine , Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP , BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge all banks L , L H H H × NOP Nop L H L H BA, CA, A10 (AP) READ Begin Read |
Elpida Memory Original |
|
EDE5104AGSE EDE5108AGSE EDE5104AGSE-4A-E EDE5104AGSE-5C-E EDE5104AGSE-6C-E EDE5104AGSE-6E-E EDE5108AGSE-6C-E E0715E20 |
| Abstract: A10 (AP) (input pin) A10 is sampled during a precharge command to determine whether the precharge , × H H H L L H L L H H L L Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA WRIT WRITA ACT PRE PALL REF SELF , × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP |
Elpida Memory Original |
|
EDE1104AASE EDE1108AASE E0404E40 |
EDE5104ABSEAbstract: EDE5104ABSE-4A-E 1 Note: 1. A13 pin is NC for ×16 organization. A10 (AP) (input pin) A10 is sampled during a , NOP Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 1 L L H H BA, RA ACT Row activating L L H L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge |
Elpida Memory Original |
|
EDE5104ABSE EDE5108ABSE EDE5116ABSE EDE5104ABSE-4A-E EDE5104ABSE-5C-E EDE5108ABSE-4A-E EDE5108ABSE-5C-E E0323E91 |
EDE2516ABSE-GEAbstract: EDE2516ABSE-GE-E EDE2516ABSE AX0 to AX12 AY0 to AY8 A10 (AP) (input pin) A10 is sampled during a precharge command to , Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA , (AP) PRE Precharge L L H L A10 (AP) PALL Precharge all banks L L L , H × NOP Nop L H L H BA, CA, A10 (AP) READ Begin Read L H L |
Elpida Memory Original |
|
EDE2516ABSE-GE-E DDR2-800 EDE2508ABSE-GE-E |
| Abstract: address AX0 to AX12 AX0 to AX12 Column address AY0 to AY9 AY0 to AY8 A10 (AP) (input pin) A10 is , Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 , 1 1 1 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE 2 2 2 2 × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP |
Elpida Memory Original |
|
E0573E40 |
DDR2-533Abstract: DDR2-667 Column address EDE5116AFSE AX0 to AX12 Note AY0 to AY9 A10 (AP) (input pin) A10 is , NOP Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 1 L L H H BA, RA ACT Row activating L L H L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge |
Elpida Memory Original |
|
DDR2-533 DDR2-667 EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E DDR2-400 E0705E20 |
DDR2-667Abstract: address L EDE5108AB Address (A0 to A13) AX0 to AX13 Note AY0 to AY9 A10 (AP) (input , Operation × DESL Nop or Power down × NOP Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 L EO Current , L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge all banks |
Elpida Memory Original |
|
EDE5108ABSE-BE E0540E11 |
ede2508abse-5c-eAbstract: address AX0 to AX12 AX0 to AX12 Column address AY0 to AY9 AY0 to AY8 A10 (AP) (input pin) A10 is , × H H H L L H L L H H L L Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA WRIT WRITA ACT PRE PALL REF SELF , × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP |
Elpida Memory Original |
|
ede2508abse-5c-e E0573E21 |
| Abstract: AY9 AY0 to AY9 1 Note Note: 1. A13 pin is NC for × 16 organization. A10 (AP) (input pin) A10 is , L L H L L H H L L × H H H L L H L L H H L L Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA WRIT WRITA ACT , × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP |
Elpida Memory Original |
|
E0852E10 |
EDE1108AASEAbstract: EDE1108AASE-5C-E EDE1108AASE AX0 to AX13 Notes Column address AY0 to AY9 A10 (AP) (input pin) A10 is sampled , , CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 1 L L H H BA, RA ACT Row activating L L H L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge all banks L L L H × REF |
Elpida Memory Original |
|
EDE1108AASE-5C-E EDE1108AASE-6E-E EDE1104AASE-4A-E EDE1104AASE-5C-E EDE1104AASE-6E-E E0404E20 |
| Abstract: to AX13 Column address AY0 to AY9, AY11 AY0 to AY9 Note A10 (AP) (input pin) A10 is sampled during , L H H L L × H H H L L H L L H H L L × H H H L L H L L H H L L Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA , BA, EMRS-OPCODE 2 2 2 2 × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA |
Elpida Memory Original |
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E0562E40 |
| Abstract: (AP) (input pin) A10 is sampled during a precharge command to determine whether the precharge applies , H L L × H H H L L H L L H H L L Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA WRIT WRITA ACT PRE PALL REF , × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP |
Elpida Memory Original |
|
EDE5108AGBG E0917E10 |
rca ca 3079Abstract: RCA 3079 RAS CS NC BA0 BA1 A10/AP A0 A1 A2 DQM2 VCC NC DQ16 VSSQ DQ17 DQ18 VCCQ DQ19 DQ20 , 3. A10/AP A10/AP BA0 BA1 0 0 0 A 1 0 0 A 0 1 0 , 1 D 4. A10/APBA0BA1 A10/AP BA0 BA1 0 0 0 A 0 1 0 B , CAS WE ADDRESS BA0, 1 A10/AP A9A0 H X X X X NOP L H H H , tAH BA0 BA1 A10 /AP RAa ADD RAa RDa CAa tCMS DQM 03 DQ CAb tAC tOH |
OKI Electric Industry Original |
|
MS82V48540 MS82V48540-7 MS82V48540-8 rca ca 3079 RCA 3079 FJDS82V48540-01 216-W 536-R 256-C TSOPIITSOPII86-P-400-0 |
EDE5104ABSEAbstract: EDE5104ABSE-4A-E 1 Note: 1. A13 pin is NC for ×16 organization. A10 (AP) (input pin) A10 is sampled during a , NOP Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 1 L L H H BA, RA ACT Row activating L L H L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge |
Elpida Memory Original |
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E0323E90 |
DDR2-400Abstract: DDR2-533 address L EDE5116AFSE Address (A0 to A12) AX0 to AX12 Note AY0 to AY9 A10 (AP) (input , Operation × DESL Nop or Power down × NOP Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 L EO Current , L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge all banks |
Elpida Memory Original |
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E0705E51 |
| Abstract: to AY9, AY11 AY0 to AY9 AY0 to AY9 1 Notes Notes: 1. A13 pin is NC for ×16 organization. A10 (AP , H L L Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA WRIT WRITA ACT PRE PALL REF SELF MRS EMRS DESL NOP , ILLEGAL Notes 1 1 1 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE 2 2 2 2 × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA |
Elpida Memory Original |
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EDE5104ABSA EDE5108ABSA EDE5116ABSA EDE5104AB EDE5116AB E0323E10 |
E5116Abstract: DDR2-400 Column address EDE5116AFSE AX0 to AX12 Note AY0 to AY9 A10 (AP) (input pin) A10 is , NOP Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 1 L L H H BA, RA ACT Row activating L L H L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge |
Elpida Memory Original |
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E5116 |
EDE2516ABSEAbstract: ede2508abse-5c-e to AY8 A10 (AP) (input pin) A10 is sampled during a precharge command to determine whether the , Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA , (AP) PRE Precharge L L H L A10 (AP) PALL Precharge all banks L L L , H × NOP Nop L H L H BA, CA, A10 (AP) READ Begin Read L H L |
Elpida Memory Original |
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E0573E41 |
| Abstract: Row address AX0 to AX13 Column address AY0 to AY9 Note A10 (AP) (input pin) A10 is sampled during a , H L L × H H H L L H L L H H L L Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA WRIT WRITA ACT PRE PALL REF , × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP |
Elpida Memory Original |
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E0540E10 |
| Abstract: pin is NC for ×16 organization. A10 (AP) (input pin) A10 is sampled during a precharge command to , BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP , 1 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE 2 2 2 2 × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP |
Elpida Memory Original |
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E0323E40 |
EDE5104AGSEAbstract: EDE5104AGSE-4A-E Note AY0 to AY9 A10 (AP) (input pin) A10 is sampled during a precharge command to determine , Nop or Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP , BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge all banks L , L H H H × NOP Nop L H L H BA, CA, A10 (AP) READ Begin Read |
Elpida Memory Original |
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E0715E31 |
| Abstract: H L L × H H H L L H L L H H L L Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA WRIT WRITA ACT PRE PALL REF , × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1, 4 1, 4 1 1 1 1 × × BA, MRS-OPCODE BA |
Elpida Memory Original |
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E0705E10 |
| Abstract: to AY9 AY0 to AY8 A10 (AP) (input pin) A10 is sampled during a precharge command to determine , L L H L L H H L L × H H H L L H L L H H L L Address × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) Command DESL NOP READ READA WRIT WRITA ACT , × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP) BA, RA BA, A10 (AP) A10 (AP) 1 × × BA, MRS-OPCODE BA, EMRS-OPCODE × × BA, CA, A10 (AP) BA, CA, A10 (AP) BA, CA, A10 (AP |
Elpida Memory Original |
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E0657E30 |
| Abstract: VIEW) VDD DQ0 DQ1 VSSQ DQ2 DQ3 VDDQ DQ4 DQ5 VSSQ DQ6 DQ7 VDDQ LDQM WE CAS RAS CS BA A10/AP A0 A1 A2 A3 , the device. CKE Clock Enable A0 ~ A10/AP BA RAS CAS WE L(U)DQM DQ0 ~ 15 VDD/VSS VDDQ/VSSQ N.C , Refresh Exit L H H CKEn-1 CKEn CS RAS CAS WE DQM BA CMOS SDRAM A10/AP A9~ A0 Note H H X H L H X , , L=Logic Low) Note : 1. OP Code : Operand Code A0 ~ A10/AP, BA : Program keys. (@MRS) 2. MRS can be , "High" at read, write, row active and precharge, bank B is selected. If A10/AP is "High" at row precharge |
Samsung Electronics Original |
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K4S161622E-TI/E 2K/32 K4S161622E K4S161622E-TI/E50 K4S161622E-TI/E55 K4S161622E-TI/E60 |
EDE5104GBSAAbstract: EDE5104GBSA-5A-E for ×16 organization. A10 (AP) (input pin) A10 is sampled during a precharge command to determine , × NOP Nop or Power down L H L H BA, CA, A10 (AP) READ ILLEGAL 1 L H L H BA, CA, A10 (AP) READA ILLEGAL 1 L H L L BA, CA, A10 (AP) WRIT ILLEGAL 1 L H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 L L H H BA, RA ACT Row activating L L H L BA, A10 (AP) PRE Precharge L |
Elpida Memory Original |
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EDE5104GBSA EDE5108GBSA EDE5116GBSA EDE5104GBSA-5A-E EDE5104GB EDE5108GB E0249E30 |
DDR2-800Abstract: EDE2508ABSE-GE EDE2516ABSE AX0 to AX12 AY0 to AY8 A10 (AP) (input pin) A10 is sampled during a precharge command to , Power down H BA, CA, A10 (AP) READ ILLEGAL L H BA, CA, A10 (AP) READA ILLEGAL 1 L L BA, CA, A10 (AP) WRIT ILLEGAL 1 H L L BA, CA, A10 (AP) WRITA , (AP) PRE Precharge L L H L A10 (AP) PALL Precharge all banks L L L , H × NOP Nop L H L H BA, CA, A10 (AP) READ Begin Read L H L |
Elpida Memory Original |
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E0657E20 |
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