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A0-A14

Catalog Datasheet MFG & Type PDF Document Tags

M28F256

Abstract: PDIP32 / Outputs E 8 A0-A14 W Table 1. Signal Names VPP Ground March 1996 G VSS , Operation A0-A14 DQ0-DQ7 X 2 Write X 90h 0000h 20h 0001h 0A8h X 20h Read X Data Output A0-A14 Data Input 00h Electronic Signature Read Write Write DQ0-DQ7 Write 1 A0-A14 Read Read Operation Setup Erase/ 2 Write X 20h Erase Erase Verify Setup Program/ 2 2 Write A0-A14 0A0h Write X 40h
STMicroelectronics
Original
M28F256 PLCC32 PDIP32 1N914 AI00688B

1N914

Abstract: M28F256 offered in PDIP32 and PLCC32 packages. VCC VPP 15 8 A0-A14 W Table 1. Signal Names A0-A14 Address Inputs DQ0-DQ7 Data Inputs / Outputs E Output Enable W Write Enable , M28F256 Table 5. Commands (1) Command 1st Cycle Cycles 2nd Cycle Operation A0-A14 , Output A0-A14 Data Input 00h Electronic Signature Read Write Write DQ0-DQ7 Write 1 A0-A14 Read Read Operation Setup Erase/ 2 Write X 20h Erase
STMicroelectronics
Original

I2S* sony

Abstract: MCM60256 DSP56009/D 4-5 Design Considerations Application Examples MA14­MA0 MD7­MD0 A0­A14 DQ0­DQ7 , Bootstrap MA14­MA0 MD7­MD0 A0-A14 A0-A14 DQ0-DQ7 A0-A14 DQ0-DQ7 SRAM A0­A14 DQ0-DQ7 SRAM , MCS1 MCS2 MCS3 DSP56009 (EMI) SRAM Relative Addressing A0­A14 DQ0­DQ7 SRAM (MCM60256A
Motorola
Original
I2S* sony MCM60256 00FF AA0259 MCM514256A AA0260 MDM6206 MCM6206 AA0261

1N914

Abstract: M28F256 / Outputs E 8 A0-A14 W Table 1. Signal Names VPP Ground March 1996 G VSS , Operation A0-A14 DQ0-DQ7 X 2 Write X 90h 0000h 20h 0001h 0A8h X 20h Read X Data Output A0-A14 Data Input 00h Electronic Signature Read Write Write DQ0-DQ7 Write 1 A0-A14 Read Read Operation Setup Erase/ 2 Write X 20h Erase Erase Verify Setup Program/ 2 2 Write A0-A14 0A0h Write X 40h
STMicroelectronics
Original

BP-DIP32

Abstract: 1N914 / Outputs E 8 A0-A14 W Table 1. Signal Names VPP Ground March 1996 G VSS , Operation A0-A14 DQ0-DQ7 X 2 Write X 90h 0000h 20h 0001h 0A8h X 20h Read X Data Output A0-A14 Data Input 00h Electronic Signature Read Write Write DQ0-DQ7 Write 1 A0-A14 Read Read Operation Setup Erase/ 2 Write X 20h Erase Erase Verify Setup Program/ 2 2 Write A0-A14 0A0h Write X 40h
STMicroelectronics
Original
BP-DIP32

Scans-005192

Abstract: A14C possible using the standard JEDEC algorithm. Table 1. Signal Names Figure 1. Logic Diagram A0-A14 , Voltage Vss Ground September 1996 vcc A0-A14 W Ã' G 15 =£1 M28256 DQ0-DQ7 vss ai01885 1/18 , ivss I DQ2 I DQ1 I DQO I AO I A1 I A2 PIN DESCRIPTION Addresses (A0-A14). The address inputs select , at which data is no longer driven. Figure 9. Read Mode AC Waveforms A0-A14 X VALID X tAVQV , Write Enable Controlled A0-A14 W DQ0-DQ7 AI01701 Figure 11. Write Mode AC Waveforms - Chip Enable
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OCR Scan
Scans-005192 A14C S028 PD1P28 TSOP28 07CIQ11 7T2T237 D7E1D12

AI00927

Abstract: all inputs and outputs are TTL compatible. Table 1. Signal Names A0-A14 Address Inputs DQ0-DQ7 Data , 1. Logic Diagram Vcc A0-A14 15 M638032 DQ0-DQ7 vss ai01613 October 1995_1/11 This is , (see Figure 7) Figure 5. Address Controlled, Read Mode AC Waveforms A0-A14 DQ0-DQ7 tAVAV valid â , Figure 6. Chip Enable or Output Enable Controlled, Read Mode AC Waveforms tAVAV A0-A14 zx VALID , Waveforms A0-A14 W DQ0-DQ7 tAVAV VALID tAVWH -⺠- tAVEL h*- tWLWH â  tAVWL Ni-" tWLQZ tWHDX
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OCR Scan
AI00927 AI01048 SOJ28

IC SRAM 64K X 4

Abstract: UNITS NOTES Input High (Logic 1) Voltage Input Low (Logic 0) Voltage A0-A14, WE, OE A15, CE, LJB, LB A0-A14, WË.ÜË A15,CË,ÜB, LB A0-A14 VlH VlH VlL VlL ILi ILo VO H VOL Vcc 2.2 2.0 -0.5 -0.5 , SYMBOL MAX UNITS NOTES Input Capacitance: A0-A14, WE, OE Input Capacitance: A15, CE Input Capacitance
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OCR Scan
IC SRAM 64K X 4 MT4S6416 MT4S6416D-20 MT4S641S

TMS47C256 ROM

Abstract: 74LS °C. operation address (A0-A14) The address-valid interval determines the device cycle time. The 15 , A0-A14 Address Inputs E Chip Enable/Power Down NC No Connection Nl[ Make No External Connection Q1-Q8 , 8-BIT READ-ONLY MEMORY read cycle timing A0-A14 standby mode Q1-Q8 X -V|H -V,L ty(A) -»I J«- -V,H 'a(A) Q1-Q8 -Hl-z- ' \-pT. - hâ'"4-=1 I I ^_, . ! jâ'"i A0-A14 ADDRESS N yr
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OCR Scan
TMS47C256 ROM 74LS T443 TMS47C256 768-WORD TMS47C256-15 TMS47C256-20 TMS47C256-25

EM02R2

Abstract: EM033C08 (Active Low) WE Write Enable (Active Low) V CC Power V SS VSS CE VCC WE A0-A14 , ns FIGURE 4: Read Cycle Timing (WE = VIH ) tRC A0-A14 tAA CE tCS tOE OE tOLZ tLZ , 4 NanoAmp Solutions, Inc. EM033C08 FIGURE 5: Write Cycle Timing (OE fixed) tWC A0-A14 , High-Z Data Out FIGURE 6: Write Cycle Timing (OE clock) tWC A0-A14 tW R OE tA W tCW CE tW P
NanoAmp Solutions
Original
EM033C08N EM02R2 EM02R2XX

LX50CM232

Abstract: LX50CM232I OEB WEB RAM D0-D7 ROMCS OEB A15-A17 A0-A14 ROM Pin Name A0 - A17 Pin Function , X L Dout Only A0-A14 are vaild * H L H H Z Only A0-A14 are vaild * H L H L Dout Only A0-A14 are vaild * H L L X Din Output Floating ROM
Linvex Technology
Original
LX50CM232I LX50CM232 256K- A0-A17
Abstract: TSOP28 (NS) 8 x13.4mm Figure 1. Logic Diagram VCC 15 A0-A14 8 DQ0-DQ7 W E G Data Input , DESCRIPTION Addresses (A0-A14). The address inputs select an 8-bit memory location during a read or write , at which data is no longer driven. Figure 9. Read Mode AC Waveforms A0-A14 tAVQV E tGLQV G , Controlled A0-A14 tAVWL E tELWL G tGHWL W VALID tWLAX tWHEH tWLWH tWHGL tWLDV DQ0-DQ7 DATA , A0-A14 tAVEL E tGHEL G tWLEL W VALID tELAX tELEH tEHGL tELDV DQ0-DQ7 DATA IN tDVEH tEHDX STMicroelectronics
Original
PDIP28 AI01885

m628032

Abstract: SOJ28 Write Enable VCC VCC 15 8 A0-A14 W DQ0-DQ7 M628032 E Supply Voltage VSS , AC Waveforms tAVAV A0-A14 VALID tAVQV DQ0-DQ7 tAXQX DATA VALID AI01090 Note: E = , Mode AC Waveforms tAVAV VALID A0-A14 tAVQV tAXQX tELQV tEHQZ E tELQX tGLQV , ) Figure 8. Write Enable Controlled, Write AC Waveforms tAVAV A0-A14 VALID tAVWH tAVEL tWHAX , A0-A14 VALID tAVEH tAVEL tELEH tEHAX E tAVWL W tEHDX DQ0-DQ7 DATA INPUT tDVEH
STMicroelectronics
Original
1370E PSDIP28 AI00922B

d7b component

Abstract: DS1210 3/10 DS3803 BLOCK DIAGRAM Figure 1 A0­A14 A0­A14 VCC VCCO 32K x 8 SRAM WEA OE , VCCO A0­A14 VCC 32K x 8 SRAM VCCI DS1210 VBAT1 WEB WE OEB OE VBAT2 D0­ D7 CE CEO D0A­D7B CEI CEB BAT VCCO A0­A14 VCC 32K x 8 SRAM VCCI DS1210 VBAT1 WEC WE OEC OE VBAT2 D0­ D7 CE CEO D0A­D7C CEI CEC BAT VCCO A0­A14 VCC
Dallas Semiconductor
Original
d7b component simm 256K 1024K

EM02R2

Abstract: EM033C08 VSS D2 D1 D0 A0 A1 A2 A3 Pin Name A0-A14 D0-D7 CE OE WE VCC VSS NC Pin Function , ns FIGURE 5: Read Cycle Timing (WE = VIH) tRC A0-A14 tAA tAHC tASC CE tCS tOE OE , NanoAmp Solutions FIGURE 6: Write Cycle Timing (OE fixed) tWC A0-A14 tWR tAW tCW CE tASC , FIGURE 7: Write Cycle Timing (OE clock) tWC A0-A14 tASC tAHC tWR OE tAW tCW CE tWP WE
NanoAmp Solutions
Original
EM033C08T EM033C

aaav

Abstract: CONDITIONS A0-A14, WE, ÖE A15,ÜE,ÜB, LB A0-A14, WE, OE A15, ÜE, UB, LB A0-A14, WE, ÜE Input Leakage Current , 30 |SB2 5 35 35 35 mA 13 CAPACITANCE DESCRIPTION Input Capacitance: A0-A14
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OCR Scan
aaav MT2S3216 MT2S3216D-20

M28256

Abstract: PDIP28 Names 15 8 A0-A14 W A0-A14 Address Input Data Input / Output G W Write , algorithm. PIN DESCRIPTION Addresses (A0-A14). The address inputs select an 8-bit memory location during , tested in production. 11/21 M28256 Figure 9. Read Mode AC Waveforms A0-A14 VALID tAVQV , Enable (W) = High. Figure 10. Write Mode AC Waveforms - Write Enable Controlled A0-A14 VALID , A0-A14 VALID tAVEL tELAX E tGHEL tELEH G tWLEL tEHGL W tELDV tEHWH DATA IN
STMicroelectronics
Original
M28256- M28256-W
Abstract: 16 DQ4 I/O 14 GND 15 DQ3 INPUT A0-A14 E G W ; ; ; ; ADDESS CHIP ENABLE , 11-13, 15-19 28 A0-A14 VOLTAGE SENSE AND SWITCHING CIRCUITRY E 20 POWER E 32,768 -
Original
M48Z32Y-100PC1 IL122
Abstract: Monolithic Static RAM A0-A14 , No Connection TJ'TJ â¡ â¡ â¡ â¡ â¡ â¡ â¡ â¡ CTD â¡ â¡ â , EDI82136C Rev. 1.0 5/92 299 Pin Descriptions A0-A14, Address Inputs 15 Address inputs are , , the four DQP pins Military Functional Block Diagram Decode A0-A14 32Kx18 >â'¢ MB -
OCR Scan
DQ0-DQ31 DQ16-DQ31 EDI82136C20JB EDI82136C25JB EDI82136C30JB EDI82136C35JB

FZJ 125

Abstract: 1N914 use in high speed microprocessor systems. Table 1. Signal Names A0-A14 Address Inputs DQ0-DQ7 Data , Vss Ground Vqc Vpp A0-A14 W E G 15 M28F256 DQ0-DQ7 vss ai006b8b March 1996 1/20 M28F256 , SGS-THOMSON M28F256 Table 5. Commands(1) Command Cycles 1st Cycle 2nd Cycle Operation A0-A14 DQ0-DQ7 Operation A0-A14 DQ0-DQ7 Read 1 Write X OOh Electronic Signature 2 Write X 90h Read 0000h 20h Read 0001 h 0A8h Setup Erase/ Erase 2 Write X 20h Write X 20h Erase Verify 2 Write A0-A14
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OCR Scan
FZJ 125

C2716

Abstract: C2717 / Outputs E 8 A0-A14 W Table 1. Signal Names VPP Ground March 1996 G VSS , Operation A0-A14 DQ0-DQ7 X 2 Write X 90h 0000h 20h 0001h 0A8h X 20h Read X Data Output A0-A14 Data Input 00h Electronic Signature Read Write Write DQ0-DQ7 Write 1 A0-A14 Read Read Operation Setup Erase/ 2 Write X 20h Erase Erase Verify Setup Program/ 2 2 Write A0-A14 0A0h Write X 40h
Cypress Semiconductor
Original
C2716 C2717 C2718 CY7C271-45WC cy7c271 w16 SMD CY7C271 CY7C274 7C271 7C271/7C274 7C274 300-M

TMS320C30

Abstract: TMS320C32 offered in PDIP32 and PLCC32 packages. VCC VPP 15 8 A0-A14 W Table 1. Signal Names A0-A14 Address Inputs DQ0-DQ7 Data Inputs / Outputs E Output Enable W Write Enable , M28F256 Table 5. Commands (1) Command 1st Cycle Cycles 2nd Cycle Operation A0-A14 , Output A0-A14 Data Input 00h Electronic Signature Read Write Write DQ0-DQ7 Write 1 A0-A14 Read Read Operation Setup Erase/ 2 Write X 20h Erase
Texas Instruments
Original
TMS320C32 TMS320C30 hb 2 lb SPRA040A

M28F256A

Abstract: M28F256 Names 15 8 A0-A14 W A0-A14 Address Input Data Input / Output G W Write , algorithm. PIN DESCRIPTION Addresses (A0-A14). The address inputs select an 8-bit memory location during , tested in production. 11/21 M28256 Figure 9. Read Mode AC Waveforms A0-A14 VALID tAVQV , Enable (W) = High. Figure 10. Write Mode AC Waveforms - Write Enable Controlled A0-A14 VALID , A0-A14 VALID tAVEL tELAX E tGHEL tELEH G tWLEL tEHGL W tELDV tEHWH DATA IN
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OCR Scan
M28F256A VA00688 U28F256

M28F256A

Abstract: FZJ 101 DSP56009/D 4-5 Design Considerations Application Examples MA14­MA0 MD7­MD0 A0­A14 DQ0­DQ7 , Bootstrap MA14­MA0 MD7­MD0 A0-A14 A0-A14 DQ0-DQ7 A0-A14 DQ0-DQ7 SRAM A0­A14 DQ0-DQ7 SRAM , MCS1 MCS2 MCS3 DSP56009 (EMI) SRAM Relative Addressing A0­A14 DQ0­DQ7 SRAM (MCM60256A
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OCR Scan
FZJ 101 VA00679B
Abstract: all inputs and outputs are TTL compatible. Table 1. Signal Names A0-A14 Address Inputs DQ0-DQ7 Data , 1. Logic Diagram Vcc A0-A14 15 M638032 DQ0-DQ7 vss ai01613 October 1995_1/11 This is , (see Figure 7) Figure 5. Address Controlled, Read Mode AC Waveforms A0-A14 DQ0-DQ7 tAVAV valid â , Figure 6. Chip Enable or Output Enable Controlled, Read Mode AC Waveforms tAVAV A0-A14 zx VALID , Waveforms A0-A14 W DQ0-DQ7 tAVAV VALID tAVWH -⺠- tAVEL h*- tWLWH â  tAVWL Ni-" tWLQZ tWHDX Smart Modular Technologies
Original
SM372SDSFN3XGXX 512KB

pd78p083gb

Abstract: PD780823 (Active Low) WE Write Enable (Active Low) V CC Power V SS VSS CE VCC WE A0-A14 , ns FIGURE 4: Read Cycle Timing (WE = VIH ) tRC A0-A14 tAA CE tCS tOE OE tOLZ tLZ , 4 NanoAmp Solutions, Inc. EM033C08 FIGURE 5: Write Cycle Timing (OE fixed) tWC A0-A14 , High-Z Data Out FIGURE 6: Write Cycle Timing (OE clock) tWC A0-A14 tW R OE tA W tCW CE tW P
NEC
Original
pd78p083gb PD780823 uPD78070A uPD78078 uPD78083 uPD78P083 PD78P083 PD78P08378K/0PD7808324PROM PD78P083DU PD78083IEU-886 78K/0 IEU-849
Abstract: D7 A14 L VSS VSS RESET Open A0-A14 Address Bus RESET Reset D0-D7 , VPP PROM A0-A14 D0-D7 CE PROM OE PROM PGM , Fail All Pass G = N = 23 µPD78P083 - A0-A14 D0-D7 , D0-D7 - -PROM A0-A14 CE OE D0-D7 Hi-Z Hi-Z 25 µPD78P083 , tCEH tPW VIH PGM VIL tLW VIH OE VIL 42 tOES µPD78P083 PROM A0-A14 -
OCR Scan
48Z35 M48Z35 M48Z35Y 28-LEAD M48Z35/35Y PCDIP28
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