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Part Manufacturer Description Datasheet BUY
LM3S5R31-IBA80-C3 Texas Instruments Stellaris Microcontroller 103-NFBGA visit Texas Instruments
LF2020NP-103 Sumida Corporation LF2020NP-103 visit Digikey
LF2115NP-103 Sumida Corporation LF2115NP-103 visit Digikey
103-080 Bivar Inc 103-080 visit Digikey
LF2420NP-103 Sumida Corporation LF2420NP-103 visit Digikey
83AA1-103 Grayhill Inc 83AA1-103 visit Digikey

A/bc+103

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1.0 V VDDQ Features Introduction â'¢ 32Mb x 36 and 64Mb x 18 organizations available â'¢ Up to 600 MHz DDR operation (1.2 Gb/s/pin data rate) â'¢ 600 MT/s peak transaction rate (in millions per second) â'¢ 43.2 Gb/s peak data bandwidth (x36 @ 1.2 Gb/s) â'¢ Common I/O DDR Data Bus â'¢ Multiplexed DDR Address Bus (2 beats in 1 cycle) â'¢ Burst of 2 Read and Write operations â'¢ 8 bank architecture â'¢ Reduced Random Cycle Time (tRC = 13.3 ns at 600 MHz) â'¢ Configurable Random Cycle Time GSI Technology
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GS4303T18/36GN 180-P GS4303T36GN-500 GS4303T18GN-600I GS4303T18GN-500I GS4303T36GN-600I
Abstract: +2 CK A A0 A1 A2 A3 REF CS, WE DK DQ. DQINV, DM Rev: 1.03 1/2014 W0 W1 W2 W3 , 1.0 V VDDQ Features Introduction â'¢ 32Mb x 36 and 64Mb x 18 organizations available â'¢ Up to 800 MHz DDR operation (1.6 Gb/s/pin data rate) â'¢ 400 MT/s peak transaction rate (in millions per second) â'¢ 57.6 Gb/s peak data bandwidth (x36 @ 1.6 Gb/s) â'¢ Common I/O DDR Data Bus â'¢ Multiplexed DDR Address Bus (4 beats over 2 cycles) â'¢ Burst of 4 Read and Write operations â'¢ 8 bank GSI Technology
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GS4303R18/36GN GS4303R36GN-667 GS4303R18GN-800I GS4303R18GN-667I GS4303R36GN-800I GS4303R36GN-667I
Abstract: 103 104 105 106 f (Hz) 107 Fig.23 Typical impedance as a function of frequency. MGB044 , 102 103 104 105 Fig.24 Typical impedance as a function of frequency. 1999 Apr 26 23 , 104 105 106 f (Hz) 107 Fig.25 Typical impedance as a function of frequency. CCB083 103 , 103 104 105 Fig.26 Typical impedance as a function of frequency. 1999 Apr 26 24 106 , ; UR = 10 to 40 V. 10 102 103 104 105 Tamb = 25 °C. Fig.28 Typical impedance as a BC Components
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capacitor BC 138 axial bc 20229 87478 Solid Aluminium SAL cecc 16101 014 24 01 02 80688 MBB121 CCB032
Abstract: ) · Potted with epoxy resin in a blue flame-retardant case · Radial leads of solder-coated wire , data and test requirements see "Type detail specification HQN-384-02/103". 1999 Apr 29 147 BC Components
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MKT-HQ-370-PH 63v MKT-HQ-370-PH MKT-HQ 370-PH 63v MKT-HQ-370-PH 100v mkt-hq 370 - ph mkt-hq 370 ph CBA111 HQN-384-02/103
Abstract: A 102, 2SA 103, 2N 1191, 2N 1192, 2N 1193, 2N 1194,2N 2042, 2N 507, ASY 28, ASY 29, ASY 73, ASY 74 , 103, AF 239, 2SA 100,2S A 101,2SA 102, 2SA 103, AF 239,2 S A 100,2S A 101,2 S A 102,2SA 103, 36a 36a , 74, ASY 75, AF 239, 2SA 100, 2SA 101, 2SA 102, 2SA 103, AF 239,2 S A 100, 2SA 101, 2SA 102,2SA 103 , 103, AF 239,2 S A 100,2 S A 101,2S A 102,2 S A 103, 1a 36a 36c 1a 1a 20 ASY 76, ASY 77, ASY 26, ASY , 237, AF 239,2 S A 100,2SA 101,2 S A 102, 2SA 103, 2N 1191, 2N 1192, 2N 1193, 2N 1194, 2N 2042, 2N -
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Transistor 2SA 2SB 2SC 2SD 2SK596 C3885A 2sd103 2SC906 2SA1281 PA63H MPA68H BD241
Abstract: 0 nF 0n 1u F F 103 104 105 f (Hz) 106 Fig.14 AC voltage (RMS value) as a , nF 10 1 102 103 104 105 106 f (Hz) Fig.17 AC voltage (RMS value) as a , 10 102 103 104 105 f (Hz) Fig.21 Tangent of loss angle as a function of frequency , solder flux Tangent of loss angle at 100 kHz 150 × 10-4 · Potted with epoxy resin in a , Low-inductive wound cell of metallized polyethylene terephthalate (PETP) film, potted with epoxy resin in a BC Components
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capacitor bc series 680n K 400 capacitor 0.022 k 400 MKT philips bc series 680n K 400 capacitor 0.033 k 400 MKT philips capacitor 0.01 k 400 MKT capacitor 0.01 k 400 MKT philips CBA141 HQN-384-02/104
Abstract: 10-3 104 3.3 uF 105 1.0 uF 106 107 Fig.16 Impedance as a function of frequency , 103 104 105 106 f (Hz) Fig.18 AC voltage (RMS value) as a function of frequency at Tamb , 47 n F nF F 10 103 104 105 106 107 f (Hz) Fig.21 AC voltage (RMS value) as a , 10 1 102 103 104 105 106 f (Hz) 107 Fig.26 Tangent of loss angle as a , metallized polypropylene (PP) film, potted with epoxy resin in a flame-retardant polypropylene case · BC Components
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Philips MKP 378 Philips MKP 74124 PHILIPS 74224 capacitor MKP-1 1000V CBA237 CBA216 HQN-384-17/102
Abstract: 47 nF , Maximum RMS voltage and AC current (sinewave) as a function of frequency for Tamb 100 °C CBA202 103 , .10 AC voltage (RMS value) as a function of frequency at Tamb 100 °C. CBA937 103 handbook, full , loose in box and taped on reel · Consists of a low-inductive wound cell of metallized polypropylene film, potted in a flame-retardant case. DESCRIPTION Capacitance range (E12 series) VALUE 1 to BC Components
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CSA-C22 Philips MKP 479 Philips MKP 336 capacitor MKP 336 2 Philips MKP 336 2 MKP BC 336 2 transistor bc 102 CBA195 55/100/21/C UL1414 UL1283 HQN-384-14/109
Abstract: Emitter-base voltage (lc = 0) -5 V 'cm Collector peak current -2 A 'bm Base peak current -1 A P.O. Total power dissipation at Tamb â'" 25 °C 1 W at Tcase â'" 25 °C 10 W "'"stg Storage temperature -65 to , mA for BC 460 for BC 461 -40 -60 V V VCE(ss*) Collector-emitter saturation voltage lc = -1 A lB = -100 mA -1 V VBE(Sa'i) Base-emitter saturation voltage lc = -1 A lB = -100 mA -1.5 V h*E DC current gain Gr. 4 Gr. 5 Gr. 6 lc = -500 mA Vce = -4V lc = -500 mA Vce = -4V lc = -500 mA VCE = -4V lc = -1 A -
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BC441 bc460 bc 103
Abstract: ) Collector-emitter voltage (lB = 0) -40 V -60 V VCER Collector-emitter voltage (RBE â'" 100 Q) -50 V ->5 V VEBO Emitter-base voltage (lc = 0) -5 V 'cm Collector peak current -2 A 'bm Base peak current -1 A Pto. Total power dissipation at Tamb 25 °C 1 W at Tease â'" 25 °C 10 W Storage temperature -65 to- 200 °C , -60 V V VCE (sarj Collector-emitter saturation voltage lc = -1 A lB = -100 mA -1 V VBE(sat) Base-emitter saturation voltage lc = -1 a lB = -100 mA -1.5 V hFE DC current gain Gr. 4 Gr. 5 Gir. 6 lc = -500 -
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bc 103 transistor IR 460
Abstract: 203 103 -'b s ID2 S 101 5 10° 0,5 â'ž 1,0v â'" "rf 175 023Sfc.0S 0004130 3 «SIEG 04130 ' , , BC 202, BC203 ZOr NF i "10" 101 10s 103 10\uA â'" 178 1608 Câ'"07 ase D â  fl23Sb05 0004133 t , 2SC D â  0235bQS 000412b 1 HSIEG ; PNP Silicon Transistors -25C 04126 D BC201 SIEMENS , design in U 32 plastic package. The types are marked by a green (BC 201), blue (BC 202), and grey (BC 203 , 250 mW Thermal resistance see diagram2' flth= f (ü flthJA I -
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Q62702-C149 Q62702-C167 Q62702-C150 transistor BC 176 bc 201 transistor bc 1602 l transistor bc 103 low noise transistor bc 179 TRANSISTOR BC 203 BC2011 Q62702-C168 Q62702-C310
Abstract: , AD 167, AD 166, AL 103, AD 167, AL 102, AL 100, 2SB 449,2SB 407, AD 149, A 0 166, AL 103, AD 166, AL , ,2SA 201,2SA 202,2SA 203, AF 239, 2SA 100, 2SA 101, 2SA 102, 2SA 103, AF 239,2S A 100,2SA101,2SA 102,2SA 103, >25 100 300.00 280.00 2a 5h 2a 2a 2a 1h AF 239,2S A 100,2S A 101,2SA 102,2S A 103, AF 239 , in einem Gehause PNP-Aufbau pnp p-ch P-Kanal Typ (FET) â'" 2â'" Beschreibung Abkurzung zurAnwendung der Halbleiter. A Antennenverstarker Regelstufen AGC NF-Bereich AF AM-Bereich AM -
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transistor 2SB 367 irf 5630 transistor ESM 2878 bf199 IRF 3055 2sk116 ZTX751 ZTX3866 2SD2182 2SD1642 2SC4489
Abstract: 00 nF 1 10 102 103 104 f (Hz) 105 Fig.16 AC voltage (RMS value) as a function , 47 0n F 1 10 102 103 104 105 f (Hz) Fig.17 AC voltage (RMS value) as a , 103 104 f (Hz) 105 Fig.18 AC voltage (RMS value) as a function of frequency at 85 °C , 102 103 104 f (Hz) nF nF 105 Fig.20 AC voltage (RMS value) as a function of , 10 102 103 104 f (Hz) 105 Fig.23 Tangent of loss angle as a function of frequency BC Components
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capacitor 100N k100 t capacitor 100N k100 capacitor MKT 365 Philips capacitor 100N 63V bc 100N k100 philips 2222 367 capacitor CBA774 HQN-384-02/105
Abstract: as a function of temperature for capacitance values 2200 to 47000 pF. CCA035 103 Z () 102 , in circuitry with high component density. DESCRIPTION The capacitors consist of a thin , a high melting point solder. The capacitors are encapsulated in epoxy lacquer, which is resistant , lead spacing. The leads are provided with a flange, which guarantees that the leads are free of , dimensions The body of the capacitor is tan coloured. The capacitors also have a colour mark on top BC Components
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capacitor 1n0 z 1N22221 BC06 BC COMPONENTS 1n8182 1N5152 MAM122 CCA036 CCA037 CCA034
Abstract: 102 103 104 f (Hz) 105 Fig.20 AC voltage (RMS value) as a function of frequency at 85 , value) as a function of frequency at Tamb 85 °C for URdc = 250 V. CBA812 103 handbook, full , 102 103 104 105 106 f (Hz) Fig.23 AC voltage (RMS value) as a function of frequency , mm) 1 10 102 103 104 105 106 f (Hz) Fig.25 AC voltage (RMS value) as a , .27 AC voltage (RMS value) as a function of frequency at Tamb 85 °C for URdc = 1000 V. CBA950 103 BC Components
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MKt BC 468 05564 philips HQ 630 mkt 0.047 capacitor bc components MKT 370 67334 MKT468 CBA819 HQN-384-02/102
Abstract: =20MHz 1 V 5 10 2 5 102 2 â'" -'c 103 mA , Collector Current "'cm 1 A Base Current -'b 100 mA Power Dissipation at Tamb = 25 °C P,o, 6251» mW , leads are kept at ambient temperature at a distance of 2 mm from case G S P FORM A AVAILABLE  , , -lc= 10 mA, f = 50MHz fT 100 " MHz Collector Base Capacitance at -VCB = 10 V, f = 1 MHz p CBO â  12 PF 1> Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case -
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BC337 BC338 TRANSISTOR BC 327 BC327 transistor BC 328 BC 2001 transistor
Abstract: detailed specifications refer to this handbook, chapter "Packaging information": a) For pitch = 15.0 mm , "Packaging information": a) For pitch = 15.0 mm: H = 18.5 mm and P0 = 12.7 mm. b) For pitch = 15/7.5 mm , specifications refer to this handbook, chapter "Packaging information". a) For pitch = 15.0 mm: H = 18.5 mm and , handbook, chapter "Packaging information" a) For pitch = 15.0 mm: H = 18.5 mm and P0 = 12.7 mm. b) For , this handbook, chapter "Packaging information". a) For pitch = 15.0 mm: H = 18.5 mm and P0 = 12.7 mm BC Components
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MMKP 383 capacitor 40362 1043100v 20624 40363 BC 560 philips CBA751 HQN-384-17/106
Abstract: 103 ¡r mA h 102 5 to â'™ 5 10° 5 10- 0 1.0 2 .0 3 .0 V 4 .0 , -5 0 â'C 102 10â'™ â'™ 10° Semiconductor Group !0 1 IO2 mA 103 1998-11-01 , SIEMENS NPN Silicon AF Transistors âââââ'¢ BC 817 BC 818 For general AF , â  6 5 3 5 Ã.0 5 G 150554 1998-11-01 W â  BC 817 BC 818 SIEMENS Maximum , / bm 200 500 1 V mA A mA flo t 330. mW . Junction temperature tY 150 -
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Q62702-C1732 Q62702-C1690 Q62702-C1738 Q627Q2-C1739 Q62702-C1740 Q62702-C1505
Abstract: Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1 ) BC 846 A BC 846 B BC 847 A BC 847 B BC 847 C BC 848 A BC 848 B BC 848 C BC 849 B BC 849 C BC 850 B BC 850 C 1As IBs 1Es 1Fs 1Gs 1Js , 30 V Vcb = 30 V, 7a = 150 'C DC current gain 7c = 10 nA, V cb = 5 V BC 846 A, BC 847 A, BC 848 A BC 846 B . BC 850 B BC 847 C, BC 848 C, BC 849 C, BC 850 C 7c = 2 mA, Vce = 5 V BC 846 A, BC 847 A, BC 848 A B C 8 4 6 B .B C 850 B BC 847 C, BC 848 C, BC 849 C, BC 850 C Collector-emitter saturation -
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sot-23 MARKING CODE 1Gs bc 846 BC850 BC846 Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741
Abstract: 101 mA 103 10'2 101 10° lo 'm A 1671 G -X4 241 , 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages (10 A 3 DIN 41868). They , complementary transistors to BC 556, BC 557, BC 558, BC 559 and BC 560. Type BC 5461 > BC 546 VI BC 546 A BC 546 B BC 5471 1 BC 547 VI BC 547 A BC 547 B BC 5481 » BC 548 VI BC 548 A BC 548 B BC 548 C Ordering , the order does not include any exact indication of the current amplification group desired, a -
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BC547 BC650 C 548 B B549C C 547 B TRANSISTOR BC650 transistor bc 549 equivalent Q62702-C687 Q62702-C687-V3 Q62702-C687-V1 Q62702-C687-V2 Q62702-C688 Q62702-C688-V3
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