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A/ZVN4206A

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Abstract: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4206A ISSUE 2 ­ JUNE 94 FEATURES * 60 Volt , ID 600 mA A Pulsed Drain Current I DM 8 Gate-Source Voltage V GS ± 20 V , Drain Current(1) I D(on) A V DS =25V, V GS =10V Static Drain-Source On-State Resistance (1 , test. (3) Switching times measured with 50 source impedance and Zetex Semiconductors
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DSA003783 zvn42
Abstract: DISCONTINUED PLEASE USE ZVN4206A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4206C ISSUE 2  JUNE 94 FEATURES * 60 Volt VDS * RDS(on) = 1 â"¦ G D S E-LINE TO92 COMPATIBLE REFER TO ZVN4206A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage , Drain Current IDM 8 A Gate-Source Voltage VGS ± 20 V Power Dissipation at Tamb , Resistance (1) RDS(on) Forward Transconductance(1)(2gfs ) 3 A 300 VDS=25V, VGS=10V â Diodes
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Abstract: Not Recommended for New Design Please Use ZVN4206A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 JUNE 94 FEATURES * 60 Volt VDS * RDS(on) = 1 ZVN4206C G D S REFER TO ZVN4206A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb , Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg E-LINE TO92 COMPATIBLE VALUE 60 600 8 ± 20 UNIT V mA A V , =0V, T=125°C(2) VDS=25V, VGS=10V VGS=10V,ID=1.5A VGS=5V,ID=500mA VDS=25V,ID=1.5A A Forward Diodes
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Abstract: > PD Package number V at ID Ã at lD VGS V mA A Min. Max. mA Max. mA V w ZVN0545A* 450 90 , -39 ZVN1409A 90 10 0.04 0.8 2.4 0.1 250 5 10 0.625 E-Iine ZVN4206A 60 600 8 1.3 3 1 1 1500 10 0.7 E-Iine , VGS V mA A Min. Max. mA Max. mA V w ZVP0545A -450 -45 -0.4 -1.5 -4.5 -1 150 -50 -10 0.7 E-Iine , 'dm ^GSIthl ^DSIonl Pd Package number V at 'o ÃÃ at l0 Vqs V mA A Min. Max. mA Max , 0.5 1.5 1 10 125 3 0.7 E-Iine ZVNL110A+ 100 320 6 0.75 1.5 1 3.5 200 5 0.7 E-Iine ZVN4206A 60 600 -
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ZVN0545B ZVN0540A ZVN0540B ZVN2535A ZVN2535B ZVN0535A VN10LP ZVN2120B ZVNL120A zvp3310b
Abstract: ZVN4206A Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)60 V(BR)GSS (V)30 I(D) Max. (A)600m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC) Maximum Operating Temp (øC , ) @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) I(GSS) Max. (A)50n American Microsemiconductor American Microsemiconductor
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Abstract: V olt VQ S * R DS(on) = 1 ß REFER TO ZVN4206A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS , Tj:Tstg VALUE 60 600 8 ±20 0.7 -55 to +150 UNIT V mA A V W °C ELECTRICAL CHARACTERISTICS (at Tamb , ) V 3 100 10 100 VGS(th) tass ·dss ^D(on) RDS(on) V nA HA HA A VGg=± 20V, V Dg=0V Vds=®°V , m A V Ds=25V,lD=1.5A 3 1 1.5 300 100 60 20 8 12 a a mS pF pF pF ns ns ns ns 9fs ^iss c ''O , ) Switching times measured with 500 source impedance and -
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Abstract: Y-CHANNEL ENHANCEMENT ZVN4206A VIODE VERTICAL DMOS FET I I ISSUE 2- JUNE 94 , , VG50V 3 v­ .- lD.lmA, VD= 100 nA v&# IDSS 10 WA FA .- A .- VDs60V, VDs48V, 1 1.5 Q Q VGSIOV,ID=l,;A VGS5V,!D=500MA VDF25V,ID=1.;A - VDs25V , test. times measured with 50f2 source impedance and , Normalized 3-382 R=(m) Temperature ("C) and VGS(UO Temperature v a TYPICAL CHARACTERISTICS -
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VG-50
Abstract: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4206C ISSUE 2 JUNE 94 FEATURES * 60 Volt VDS * RDS(on) = 1 G D S E-LINE TO92 COMPATIBLE REFER TO ZVN4206A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE 60 UNIT V Continuous Drain Current at Tamb=25°C ID 600 mA Pulsed Drain Current IDM 8 A Gate-Source , Transconductance(1)(2gfs ) 3 A 300 VDS=25V, VGS=10V VGS=10V,ID=1.5A VGS=5V,ID=500mA mS Zetex Semiconductors
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Abstract: ZVN4206A ZDM4206N ZVN2106G ZVN2106A ZVN4106F ZVN3306A ZVN3306F BS170P BS170F 2N7000P 2N7000 2N7002 VN10LP VN2222LL VN10LF BSS138 B V Ds s · dm V GSIth) RpSlon) a t V GS Ciss pf Package V V 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 50 il A 2.1 2.1 1.1 1.1 2 1 1 0.6 0.6 1 0.71 0.45 0.2 0.27 0.15 0.27 0.15 0.2 0.2 0.115 0.27 0.15 0.15 0.2 A 15 15 15 15 15 8 8 8 8 8 -
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ZVN4206AV 2n7002 sot223 zvn4306 ZVN4306GV ZVN4306G ZVN4306AV ZVN4306A ZDM4306N ZVN4206GV
Abstract: TN2106N3-G VN1210M VN1206L-G ZVN4206A VN2210N3-G BSN10A TN2106N3-G MPF910 TN2106N3-G , indicates package is RoHS compliant (`Green'). * The Supertex devices are a "form, fit, and function Supertex
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BS250 VP0808L-G mosfet cross reference bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G VN0550N3-G
Abstract: SELECTION TABLES TABLE 1: N-CHANNEL SMALL SIGNAL MOSFETS Part BVdss Id 'dm VGS(th) RDS(on> PD Package number V at ID à at lD VGS V mA A Min. Max. mA Max. mA V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-Iine ZVN0545B 450 150 0.6 1 3 1 50 100 10 5 TO-39 ZVN0540A* 400 90 0.6 1 3 1 50 100 10 0.7 E-Iine ZVN0540B 400 150 0.6 1 3 1 50 100 10 5 TO-39 ZVN2535A 350 90 1 1 3 1 35 100 , -39 ZVN1409A 90 10 0.04 0.8 2.4 0.1 250 5 10 0.625 E-Iine ZVN4206A 60 600 8 1.3 3 1 1 1500 10 0.7 E-Iine -
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ZVN0124A ZVN0124B ZVN2120A ZVN3320A ZVN3306B ZVN3306 ZVN3310 BS107P BS107PT ZVN0120A
Abstract: SELECTION TABLES TABLE 2: P-CHANNEL SMALL SIGNAL MOSFETS Part BVdss Id 'dm VGS(th) ^DS(on) Pd Package number V at lD 0. at lD VGS V mA A Min. Max. mA Max. mA V w ZVP0545A -450 -45 -0.4 -1.5 -4.5 -1 150 -50 -10 0.7 E-Iine ZVP0545B -450 -100 -0.4 -1.5 -4.5 -1 150 -50 -10 5 TO , Ãà at l0 Vqs V mA A Min. Max. mA Max. mA V W M-channel ZVNL535A 350 90 0.8 0.5 , 1.5 1 3.5 200 5 0.7 E-Iine ZVN4206A 60 600 8 1.3 3 1 1.5 500 5 0.7 E-Iine BSS138t 50 200 0.8 0.5 -
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ZVP0540A ZVP0540B ZVP0535A ZVP0535B ZVP2120A ZVP2120B ZVP4105A ZVP4105 ZVP1320A
Abstract: Range SYMBOL VDS b !dm VGS ^tot Ti:Tstg VALUE 60 600 8 ±20 0.7 -55 to +150 UNIT V mA A V W °C , 60 20 8 12 12 15 3 1 1.5 60 1.3 3 100 10 100 MAX. UNIT CONDITIONS. V V nA 1 1 A C Ì a mS pF pF pF ns , .I^ I.S A Reverse Transfer Capacitance (2) ^rss Turn-On Delay Time (2X3) Rise Time (2X3) Turn-Off , rise time on a pulse generator 3-381 TYPICAL CHARACTERISTICS E < 2 3 o o o Vos - Drain , G « t « T h r t s h o J d V o tta S p o s a i * I 0 25 50 75 100125 150 175 200 225 -
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Abstract: the applications listed rely on the technique of using a switching circuit to turn the DC input into an AC signal, that can be conditioned using a transformer and rectifier to finally give the voltage , . A problem sometimes allied to size is operating temperatures. Circuits squeezed down to the limit may need to run at high temperatures, so this must be kept in mind when selecting a semiconductor switch. Zetex offer a range of both bipolar and MOSFET transistors in the high reliability E-Line Zetex Semiconductors
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flyback converter DC/DC 400V NPN transistor 10w 1a vce 400v capacitor 100MF 100v 6V DC-AC Fluorescent lamp BY206 Lamps FLASH TUBE xenon ZTX850
Abstract: SELECTION TABLES TABLE 1: N-CHANNEL SM ALL SIGNAL M OSFETS Part number B V 0ss V ZVN0545A* ZVN0545B ZVN0540A* ZVN0540B ZVN2535A ZVN2535B ZVN0535A* ZVN0124A ZVN0124B ZVN2120A ZVN2120B BS107P BS107PT ZVN0120A ZVN0120B ZVN3320A ZVN3320B ZVN0117TA ZVN2110A* ZVN2110B* ZVN3310A ZVN3310B ZVN1409A ZVN4206A ZVN2106A* ZVN2106B* ZVN3306A 2N7000 ZVN3306B VN10LP BS170P 450 450 400 400 350 350 350 240 240 200 200 200 , | ^ D S Io n l Pd V GS Package V A 0.6 0.6 0.6 0.6 1 1 0.6 2 2 2 2 2 2 2 2 1 1 2 6 6 2 2 -
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Abstract: temperature stability High input impedance Low current drive Ease of paralleling PRODUCT SUMMARY DESCRIPTION A , techniques in order to achieve greater stability, reliability and ruggedness. Part No. ZVN4206A BV0SS 60V *D , O N D / D I SCRETË I T5 » F | 7 S a D S 33 D 0 0 S 7 4 Ö 1 95D 05748 D ; ZVN 4206 ABSOLUTE , Unit V A A V W °C Drain-source voltage Continuous drain current (@ T A = 2 5 °C ) Pulse drain current Gate-source voltage Max. power dissipation (@ T A = 2 5 °C ) Operating/storage temperature range -
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ZVN4206 G-249 G-250
Abstract: SELECTION TABLES TABLE 1: N-CHANNEL SMALL SIGNAL MOSFETS Part BVdss Id 'dm VGS(th) RDS(on> PD Package number V at ID à at lD VGS V mA A Min. Max. mA Max. mA V w ZVN0545A* 450 90 , -39 ZVN1409A 90 10 0.04 0.8 2.4 0.1 250 5 10 0.625 E-Iine ZVN4206A 60 600 8 1.3 3 1 1 1500 10 0.7 E-Iine , [)S Vqs Min. ^GS(th) Max. at lD Chip geometry at Volts a A Volts kA nA A Volts Volts Volts Volts , VDS Vgs Min. VGS!th> Max. at lD Chip geometry Volts fi A Volts M A nA A Volts Volts Volts Volts mA -
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ZVN3320 ZVN2110 ZVN4106 zvn2120 ZVNL535 ZVN2535 ZVN0124 ZVNL120 ZVN2120
Abstract: 0117TA ZVN2110A* ZVN2110B* ZVN3310A ZVN3310B ZVN1409A5 ZVN4206A ZVN2106A* ZVN2106B* ZVN3306A 2N7000 , 1200 270 200 750 270 270 A 0.6 0.6 0.6 0.6 1 1 0.6 2 2 2 2 2 2 2 2 1 1 2 6 6 2 2 0.04 8 8 8 3 0.5 3 3 3 , 350 350 350 350 350 350 350 350 350 701 MU MF MZ MC 702 MY MV SS BVqss V ·d · dm \r A Min. V GS -
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BSS138S DEVICE MARKING ZVN 2N7001 ZVN3320F ZVN3310F ZVP1320F ZVP3310F
Abstract: SELECTION TABLES TABLE 2: P CHANNEL SM A LL SIGNAL M OSFETS Part number V ZVP0545A ZVP0545B ZVP0540A ZVP0540B ZVP0535A ZVP0535B ZVP2120A ZVP2120B ZVP0120A ZVP0120B ZVP1320A ZVP1320B ZVP2110A , 0 - 140 -3 0 0 -2 8 0 - 760 -1 6 0 -4 0 0 -1 7 5 -2 3 0 A -0 .4 -0 .4 -0 .4 -0 .4 -0 .4 8 -0 .4 8 -1 , ZVNL120A ZVNL110At ZVN4206A B SS138t P-channel ZVP4105A+ B SS84t -5 0 -5 0 -1 7 5 -1 3 0 -0 .5 2 -0 .5 2 -0 , 50 125 200 50 0 200 3 3 5 5 5 0.7 0.7 0.7 0.7 0.36 E-line E-line E-line E-line SO T -2 3 mA A Min. b -
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ZVP2110B ZVP3310A ZVP2106A ZVP2106B ZVP3306A ZVP3306B
Abstract: * R DS , UNIT CONDITIONS. V 1(3=1m A,VGS=0V 3 V l|j=1mA, VDg= VGS ' gss 100 nA Vgs=±20V,V ds=0V tass 10 100 HA HA Vds=60V, Vgs=0 Vds=48V, V gs=0V, T=125°C(2) A Vds -
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001G35S
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