NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: IRF6150 IRF6150 PROVISIONAL Bi-Directional MOSFET Outline Dimension NOTES : 1. ALL DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES]. 2. CONTROLLING DIMENSION: [INCH]. 3.124 2X [.123] 3. LET TER DES IGNAT ION: S1 S2 SK = SOURCE KELVIN G = GAT E S1 S = SOURCE IS = CURRENT SENSE 4. DIMENSIONAL TOLERANCES: S2 BONDING PADS: S1 S1 S2 S2 E = EMIT TER 0.20 16X , Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice.6/00 www.irf.com ... | Original |
1 pages, |
9936 mosfet datasheet abstract |
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| Abstract: PD- 93925 PROVISIONAL IRFBA31N50L IRFBA31N50L SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l Motor Control l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed , Current l HEXFETо Power MOSFET VDSS RDS(on) 0.152 500V ID 31A Super-220TM Absolute , MOSFET symbol 31 ннн ннн showing the A G integral reverse ннн ннн 124 S p-n junction diode. ннн , , 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00 ... | Original |
3 pages, |
offline smps IRFBA31N50L SMPS 30v IRFBA31N50L abstract |
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| Abstract: These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance , Devices are 100% tested to these parameters. www.irf.com IRF7805/IRF7805A IRF7805/IRF7805A Power MOSFET Selection , ; VGTH t0 2 Drain Voltage Figure 1: Typical MOSFET switching waveform Ploss = (Irms 2 Ã- Rds , Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements ... | Original |
8 pages, |
power mosfet so8 FL IRF7805A IRF7805 IR power mosfet switching power supply 9936 mosfet 10BQ040 P 838 X MOSFET 91746C IRF7805/IRF7805A 91746C abstract |
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| Abstract: These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance , impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total , This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data , 024 18 0 0 1(dmax0.16 Tmi[5a1 www.irf.com 3 IRF7807/IRF7807A IRF7807/IRF7807A For the synchronous MOSFET Q2 ... | Original |
8 pages, |
IRF7807A IRF7807 FET MARKING 10BQ040 t428 diode t428 91747C IRF7807/IRF7807A 91747C abstract |
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| Abstract: These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance , /IRF7807A /IRF7807A Power MOSFET Selection for DC/DC Converters 4 Drain Current Control FET This can be expanded and approximated by; VGTH t0 2 Drain Voltage Figure 1: Typical MOSFET switching , and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge ... | Original |
8 pages, |
IRF7807A IRF7807 10BQ040 91747C IRF7807/IRF7807A 91747C abstract |
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| Abstract: PD- 93922 PROVISIONAL IRFPS43N50K IRFPS43N50K SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate , dv/dt, Fully Characterized Avalanche Voltage and Current HEXFETо Power MOSFET VDSS l RDS , Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25â-'C, IS = 43A, VGS = , Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. ... | Original |
3 pages, |
IRFPS43N50K smps 450 W IRFPS43N50K abstract |
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| Abstract: PD- 93926 PROVISIONAL IRFB18N50K IRFB18N50K SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate , dv/dt, Fully Characterized Avalanche Voltage and Current l HEXFETо Power MOSFET VDSS RDS , RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 18 ннн ннн , )2 2377 9936 Data and specifications subject to change without notice. 6/00 www.irf.com 3 ... | Original |
3 pages, |
IRFB18N50K IRFB18N50K abstract |
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| Abstract: PD- 93923 PROVISIONAL IRFPS40N50L IRFPS40N50L SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l Motor Control l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed , Current Absolute Maximum Ratings HEXFETо Power MOSFET VDSS l RDS(on) typ. 0.083 VGS dv , Units ннн ннн 40 ннн ннн 160 A Conditions MOSFET symbol showing the G integral , )2 2377 9936 Data and specifications subject to change without notice. 6/00 www.irf.com 3 ... | Original |
3 pages, |
IRFPS40N50L IRF 930 IRFPS40N50L abstract |
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| Abstract: PD- 93924 PROVISIONAL IRFBA32N50K IRFBA32N50K SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate , dv/dt, Fully Characterized Avalanche Voltage and Current l HEXFETо Power MOSFET VDSS RDS , RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 32 ннн ннн , 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications ... | Original |
3 pages, |
IRFBA32N50K 014 IR MOSFET Transistor IRFBA32N50K abstract |
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| Abstract: PD- 93929 PROVISIONAL IRFBL17N50L IRFBL17N50L SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l Motor Control l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed , Current Absolute Maximum Ratings l HEXFETо Power MOSFET VDSS RDS(on) 0.28 500V VGS dv , Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 17 , :16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and ... | Original |
3 pages, |
IRFBL17N50L IRFB17N50L IRFBL17N50L abstract |
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| SI9936DY-01 Si9936DY N-channel enhancement mode field-effect transistor technology. Product availability: Si9936DY in SOT96-1 (SO8). Low on ) R DS(on) (m Ohm) V DS @ max. (V) SI9936DY 3 30 Dual N -channel MOSFETs Dual N-channel 20 - 50 V N-channel MOSFETs 30 3 5 50.0@10V?80@4.5V www.datasheetarchive.com/files/philips/pip/si9936dy-01-v1.html |
Philips | 14/02/2002 | 7.42 Kb | HTML | si9936dy-01-v1.html |
| ","SOT530-1","Multi-chip 25 - 300 V MOSFETs","30.0","Dual N-channel","5.0","33.0@4.5V","", "SI9936DY","SOT96 Selection results for Multi-chip 25 - 300 V MOSFETs, 24 results shown. "Type number","PACKAGE >DS(on)","Qgd(typ)", "","","","V","","A","mOhm","nC", "","","","","","","","", "PHC21025 PHC21025 PHC21025 PHC21025","SOT96-1","Multi-chip 25 - 300 V MOSFETs MOSFETs","300.0","Complementary Pair","0.34","8000.0@10V","", "PHKD13N03LT PHKD13N03LT PHKD13N03LT PHKD13N03LT","SOT96-1","Multi-chip 25 - 300 V MOSFETs","30.0","Dual N-channel","5.0","33.0@4.5V","3.9", "PHKD3NQ10T PHKD3NQ10T PHKD3NQ10T PHKD3NQ10T","SOT96-1","Multi-chip 25 www.datasheetarchive.com/download/63303178-650242ZC/30822_e.csv |
Philips | 13/06/2005 | 2.82 Kb | CSV | 30822_e.csv |
| Multi-chip 25 - 300 V MOSFETs 30 Complementary Pair 3.5 100@10V?200@4.5V 2.5 PHC2300 PHC2300 PHC2300 PHC2300@pip/PHC2300_3.html,1 SOT96-1@package/SOT96-1.html Multi-chip 25 - 300 V MOSFETs 300 Complementary Pair 0.34 8000@10V PHKD13N03LT PHKD13N03LT PHKD13N03LT PHKD13N03LT@pip/PHKD13N03LT-01.html,1 SOT96-1@package/SOT96-1.html Multi-chip 25 - 300 V MOSFETs 30 -chip 25 - 300 V MOSFETs 100 Dual N-channel 2.2 90@10V 8 PHKD6N02LT PHKD6N02LT PHKD6N02LT PHKD6N02LT@pip/PHKD6N02LT-02.html,1 SOT96-1@package/SOT96-1.html Multi-chip 25 - 300 V MOSFETs 20 Dual N-channel 6 20@5V?45@4.5V 10 PHN203 PHN203 PHN203 PHN203@pip/PHN203 www.datasheetarchive.com/download/12900955-644200ZC/30822-v1.zip (M:\cd1\selectionguides\selectionguides\content\30822.txt) |
Philips | 13/06/2005 | 0.89 Kb | ZIP | 30822-v1.zip |
| Product listing for Multi-chip 25 - 300 V MOSFETs Products listing Product name PIP PHC21025 PHC21025 PHC21025 PHC21025 - Complementary enhancement mode MOS transistors PHC2300 PHC2300 PHC2300 PHC2300 - Complementary enhancement mode MOS transistors SI9936DY - N-channel enhancement mode field-effect transistor www.datasheetarchive.com/files/philips/catalog/listing/30822.html |
Philips | 25/04/2003 | 6 Kb | HTML | 30822.html |
| - [211] 12 - 300 V P-channel MOSFETs - [15] 20 - 50 V N-channel MOSFETs - [55 - N-channel enhancement mode field-effect transistor SI9936DY - N-channel enhancement mode field -channel MOSFETs - [34] 75 - 300 V N-channel MOSFETs - [89] Multi-chip 25 - 300 V MOSFETs - [6] TOPFET - 50 V protected MOSFET - [12] Resistor equipped transistors www.datasheetarchive.com/files/philips/catalog/219/282/27046/30928/30689/41368/41380/index.htm |
Philips | 17/02/2002 | 147.15 Kb | HTM | index.htm |
| Product listing for Multi-chip 25 - 300 V MOSFETs Products listing Product name PIP PHC21025 PHC21025 PHC21025 PHC21025 - Complementary enhancement mode MOS transistors PHC2300 PHC2300 PHC2300 PHC2300 - Complementary enhancement mode MOS transistors SI9936DY - N-channel enhancement mode field-effect transistor www.datasheetarchive.com/files/philips/catalog/listing/30822-v2.html |
Philips | 01/06/2005 | 10.29 Kb | HTML | 30822-v2.html |
| -channel MOSFETs PHB73N06T PHB73N06T PHB73N06T PHB73N06T Q GD (typ)(nC) 19.0 V DS @ max.(V) 55 Configuration Single N-channel I D max(A) 73.0 Category 55 - 60 V N-channel MOSFETs PHD20N06T PHD20N06T PHD20N06T PHD20N06T -channel Category 55 - 60 V N-channel MOSFETs PHP112N06T PHP112N06T PHP112N06T PHP112N06T Q GD (typ)(nC) 29.0 Configuration Single N-channel R DS(on) (m Ohm) 8.0@10V V DS @ max.(V) 55 Category 55 - 60 V N-channel MOSFETs Single N-channel Category 55 - 60 V N-channel MOSFETs PHP54N06T PHP54N06T PHP54N06T PHP54N06T V DS @ max www.datasheetarchive.com/files/philips/catalog/parametrics/40-v1.html |
Philips | 21/01/2002 | 37.12 Kb | HTML | 40-v1.html |
| SI9936DY Category Multi-chip 25 - 300 V MOSFETs Configuration Dual N PHB20N06T PHB20N06T PHB20N06T PHB20N06T Category 55 - 60 V N-channel MOSFETs Configuration Single N PHB73N06T PHB73N06T PHB73N06T PHB73N06T Category 55 - 60 V N-channel MOSFETs Configuration Single N PHD20N06T PHD20N06T PHD20N06T PHD20N06T Category 55 - 60 V N-channel MOSFETs Configuration Single N PHP112N06T PHP112N06T PHP112N06T PHP112N06T Category 55 - 60 V N-channel MOSFETs Configuration Single N www.datasheetarchive.com/files/philips/catalog/parametrics/40.html |
Philips | 25/04/2003 | 63.72 Kb | HTML | 40.html |
| .6 SI9936DY SOT96-1 (SO8) 30 50.0@10V 80.0@4.5V 5.0 Dual N-channel 20 - 50 V N-channel MOSFETs 3 ) 60 5000.0@10V 5300.0@4.5V 0.3 Single N-channel 55 - 60 V N-channel MOSFETs 2N7002 2N7002 2N7002 2N7002 SOT23 (SST3) 60 5000.0@10V 5300.0@4.5V 0.3 Single N-channel 55 - 60 V N-channel MOSFETs BS108 BS108 BS108 BS108 SOT54 (TO-92, SC-43 SC-43 SC-43 SC-43, SPT, E-1) 200 0.3 Single N-channel 75 - 300 V N-channel MOSFETs BSH103 BSH103 BSH103 BSH103 SOT23 (SST3) 30 400.0@4.5V 500.0@2.5V 0.85 Single N-channel 20 - 50 V N-channel MOSFETs 0.67 BSH www.datasheetarchive.com/files/philips/selectionguides/tables/41368-v1.html |
Philips | 17/02/2002 | 81.79 Kb | HTML | 41368-v1.html |
| Philips Semiconductors; Interactive Selectionguides Selection results for Multi-chip 25 - 300 V MOSFETs Go to the interactive version of this Selection Guide. Download in MS-Excel sheet (right-click and choose Save Target As ) R DS(on) (mOhm) Q gd (typ) (nC) PHC21025 PHC21025 PHC21025 PHC21025 SOT96-1 Multi-chip 25 - 300 V MOSFETs 30 .0@4.5V SI9936DY SOT96-1 50.0@10V 80.0@4.5V 3.0 Disclaimer: The purpose www.datasheetarchive.com/files/philips/selectionguides/tables/30822-v2.html |
Philips | 13/06/2005 | 15.66 Kb | HTML | 30822-v2.html |