NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: NEW PRODUCT INFORMATION LRS1397 LRS1397 96-Mbit Flash Memory + 4-Mbit SRAM Combination Memory * Under development < Outline > LRS1397 LRS1397, consisting of a 96-Mbit flash memory and a 4-Mbit SRAM, is a composite memory chip that is being developed by applying stacked CSP technology to integrate the constituent memories into a large-capacity, packaged memory. This chip can make any electronic device smaller , < Main Specifications > - Capacity Flash memory: 96-Mbit SRAM: 4-Mbit - Boot block type: Bottom ... | Original |
1 pages, |
LRS1826 LRS1B07 LRS1B06 LRS1B04 LRS1B03 LRS1397 sharp LRS1360 sharp LRS1331 LRS1815 LRS1397 abstract |
| Abstract: 96M-bit Flash memory and 32M-bit Mobile RAM in a 52-pin TSOP. 96M-bit Flash memory is constructed by ... | Original |
3 pages, |
M6MGD967W33TP datasheet abstract |
| Abstract: Renesa LSIs Preliminary M6MGD967W33ATP M6MGD967W33ATP Notice: This is not a final specification. Some parametric limits are subject to change. 100,663,296-BIT 296-BIT (6,291,456-WORD 456-WORD BY 16-BIT 16-BIT) CMOS FLASH MEMORY 33,554,432-BIT 432-BIT (2,097,152-WORD 152-WORD BY 16-BIT 16-BIT) CMOS Mobile RAM & Stacked- uMCP (micro Multi Chip Package) DESCRIPTION The M6MGD967W33ATP M6MGD967W33ATP is a Stacked micro Multi Chip Package (S- uMCP) that contents 96M-bit Flash memory and 32M-bit Mobile RAM in a 52-pin TSOP. 96M-bit Flash memory is constructed by 64M-bit Flash ... | Original |
3 pages, |
M6MGD967W33ATP M6MGD967W33ATP abstract |
| Abstract: ) 128-Mbit 96-Mbit 80-Mbit Top boot Bottom boot Top boot Bottom boot Top boot Bottom boot ... | Original |
2 pages, |
LRS1B07 LRS1B06 LRS1B04 LRS1B03 LRS1816 LRS1B03/04/06/07 LRS1B03/04/06/07 abstract |
| Abstract: the no-wrap bit set (CR.3=1) crosses either the 32-Mbit or 96-Mbit boundary, the read operation may jump to an incorrect 32-Mbit memory segment. Figure 3. Burst Reads Across 32-Mbit and 96-Mbit , segments of the application such that burst reads will not cross the 32-Mbit or 96-Mbit boundaries. ... | Original |
22 pages, |
Q944 Q943 Q939 intel DOC 28F320W18 28F128W18 28F640W18 28F320W18 abstract |
| Abstract: (32Kw x 4 and 128Kw x 15) Bank 1: 96Mbit (128Kw x 48) Bank 2: 96Mbit (128Kw x 48) Bank 3: 32Mbit ... | Original |
38 pages, |
BA133 BA132 BA127 Diode samsung nor flash K8P5615UQA K8P5615UQA abstract |
| Abstract: ADVANCED INFORMATION MX67L12816J3/MX67L9632J3 MX67L12816J3/MX67L9632J3 32M-BIT 32M-BIT [4Mb x 8 or 2Mb x 16] Flash Plus 96M-BIT [12Mb x 8 or 6Mb x 16] MTP CMOS, 16M-BIT 16M-BIT [2Mb x 8 or 1Mb x 16] Flash Plus 128M-BIT 128M-BIT [16Mb x 8 or 8Mb x 16] MTP CMOS Flash Plus MTP MonoChip FEATURES · 2.7V to 3.6V operation voltage (Output power supply 1.65V-1.95V or 2.7V-3.6V through VCCQ pin) · Separate banks for data and code - MX67L9632J3 MX67L9632J3 , 00FFFF 00FFFF 128Mbit Block 1 96Mbit MTP Bank Block 1 Lock Configuration Reserved for Future ... | Original |
50 pages, |
MX67L12816J3/MX67L9632J3 32M-BIT 96M-BIT 16M-BIT 128M-BIT MX67L9632J3 MX67L12816J3 MX67L12816J3/MX67L9632J3 abstract |
| Abstract: MT72038 , 96Mbit, 3.3V Combo Modules SRAM/Flash, 5V 512K16 512K16 SRAM, 512K16 512K16 Flash 20 Aeroflex Part # ... | Original |
12 pages, |
UT9Q512 MCS-51 MCS-96 mil-std-1397 CQFP 240 Aeroflex UT69R000 arinc 429 serial transmitter ACT8600 5962 R 98580 06 V X C UT54LVDS031 ACT8502 arinc 629 controller UT69151 P2X smd datasheet abstract |
| Abstract: 32-Mbit 96-Mbit 96-Mbit 32-Mbit 4 - - 4 Block size 32 Kwords - - 32 Kwords Number of blocks 15 48 48 ... | Original |
84 pages, |
M29DW256G M29DW256G abstract |
| Abstract: MBM29QM96DF MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 ... | Original |
76 pages, |
SA204 datasheet abstract |
| Abstract: M30W0R6500T0 M30W0R6500T0 96 Mbit (64 + 32Mb, x16, Multiple Bank, Burst, Flash Memories) 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE 1 die of 64 Mbit (4Mb x 16) Flash Memory 1 die of 32 Mbit (2Mb x 16) Flash Memory SUPPLY VOLTAGE VDDF1 = VDDF2 = VDDQ = 1.7 to 2.2V VPP = 12V for fast Program (optional) LOW POWER CONSUMPTION ELECTRONIC SIGNATURE Manufacturer Code: 20h 64Mb Device Code (Top Configuration): 8810h 32Mb Device Code (Top Configu ... | Original |
19 pages, |
M30W0R6500T0 LFBGA88 J-STD-020B A0-A21 M30W0R6500T0 abstract |
| Abstract: MBM29BS/FS12DH-15 MBM29BS/FS12DH-15 ( ) MBM29BS/FS12DH- MBM29BS/FS12DH- 15 Cover Sheet Spansion Spansion Publication Number MBM29BS/FS12DH MBM29BS/FS12DH Revision DS05-20910-3 DS05-20910-3 Issue Date July 12, 2007 Da ta Shee t (Retire d Pro duct) 2 MBM29BS/FS12DH MBM29BS/FS12DH_DS05-20910-3 DS05-20910-3 July 12, 2007 2003 9 , , , AMD "Am" "MBM" , , AMD DS05�910� DATA SHEET CMOS 128M (8M � 16) MBM29BS/FS12DH-15 MBM29BS/FS12DH-15 MBM29BS/FS12DH MBM29BS/FS12DH , 128 Mbi ... | Original |
87 pages, |
SGA71 DS05 MBM29BS/FS12DH-15 MBM29BS/FS12DH- MBM29BS/FS12DH-15 abstract |