NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: AP960 AP960 960nm Multi-Mode VCSEL Array 250 um 90 um Preliminary datasheet - not released for production 120 um 125 um 15 um wiring width 175 um Features · 8x8 VCSEL ARRAY · 960nm WAVELENGTH RANGE · HIGH WAVELENGTH UNIFORMITY · SYMMETRIC EMISSION PROFILE · Ordering information Part Number Description APN1408080000 APN1408080000 960nm multimode array 8x8 1750 um 2430 um AP960 AP960 Electro-optical characteristics Parameter Symbol Conditions 960nm MultiMode ... | Original |
2 pages, |
APN1408080000 AP960 960nM 8x8 VCSEL array AP960 abstract |
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| Abstract: HPL258-960-07-22 HPL258-960-07-22 7W 960nm 7W, 960nm with 0.22NA fiber pigtail Multimode Pump Laser HPL258-960-07-15 HPL258-960-07-15 7W 960nm 7W, 960nm with 0.15NA fiber pigtail Multimode Pump Laser HPL258-975-06-22 HPL258-975-06-22 6W ... | Original |
3 pages, |
TO258 GR-468 HPL258-915-07-15 HPL258-915-07-22 HPL258-940-07-15 HPL258-940-07-22 HPL258-960-07-15 HPL258-960-07-22 HPL258-975-06-15 HPL258-975-06-22 975nm 960nM em4 tube GR-468 abstract |
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| Abstract: 6W 7W 7W 7W 6W 915nm 940nm 960nm 975nm 915nm 940nm 960nm 975nm Multimode Multimode , 0.15NA 0.15NA 0.15NA 0.15NA 7W 7W 7W 6W 7W 7W 7W 6W 915nm 940nm 960nm 975nm 915nm 940nm 960nm 975nm Multimode Multimode Multimode Multimode Multimode Multimode Multimode ... | Original |
5 pages, |
MUx-9xx-01 960nM laser diode 230.250 laser diode 3pin MU6-975-01 MU7-915-01 MU7-940-01 MU7-960-01 975nm 7w led diode E2 Laser Diode 10 pin datasheet abstract |
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| Abstract: BMU8-960-02-R BMU8-960-02-R BMU8-975-02-R BMU8-975-02-R 8W 8W 8W 8W 8W 8W 8W 8W 915nm 940nm 960nm 975nm 915nm 940nm 960nm 975nm Multimode Multimode Multimode Multimode Multimode Multimode Multimode Multimode ... | Original |
5 pages, |
975nm 960nM datasheet abstract |
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| Abstract: 915nm 940nm 960nm 975nm Single Single Single Single Emitter Emitter Emitter Emitter ... | Original |
3 pages, |
975nm 960nm emitter submount datasheet abstract |
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| Abstract: 960nm 975nm Single Single Single Single Emitter Emitter Emitter Emitter Laser Laser ... | Original |
3 pages, |
C915 2 Wavelength Laser Diode datasheet abstract |
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| Abstract: C-mount SEC8-940-01 SEC8-940-01 8W 940nm Single Emitter Laser Diode on C-mount SEC8-960-01 SEC8-960-01 8W 960nm Single ... | Original |
4 pages, |
SEC8-975-01 SEC8-960-01 SEC8-940-01 SEC8-915-01 C915 975nm 2 Wavelength Laser Diode datasheet abstract |
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| Abstract: Submount SES8-940-01 SES8-940-01 8W 940nm Single Emitter Laser Diode on Submount SES8-960-01 SES8-960-01 8W 960nm ... | Original |
4 pages, |
SES8-960-01 SES8-940-01 SES8-915-01 SES7-975-01 bookham LASER 975nm 2 Wavelength Laser Diode datasheet abstract |
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| Abstract: Submount SES8-940-01 SES8-940-01 8W 940nm Single Emitter Laser Diode on Submount SES8-960-01 SES8-960-01 8W 960nm ... | Original |
4 pages, |
SES8-960-01 SES8-940-01 SES8-915-01 SES7-975-01 975nm datasheet abstract |
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| Abstract: BMU10-960-02-R BMU10-960-02-R BMU10-975-02-R BMU10-975-02-R 10W 10W 10W 10W 915nm 940nm 960nm 975nm Multimode Multimode ... | Original |
5 pages, |
975nm 960nM 10w laser diode BMU10-975-02-R datasheet abstract |
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| Abstract: PIN Photodiodes Panasonic PN313B PN313B PIN Photodiode For optical control systems â- Features • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) • High sensitivity, high reliability • Peak sensitivity wavelength matched with infrared light emitting diodes : A,P = 960 nm (typ.) • Wide detection area, wide acceptance half angle : 0 = 65 deg. (typ.) • Adoption of visible light cutoff resin â- Absolute Maximum Ratings (Ta = 25°C) Parameter Symbol ... | OCR Scan |
2 pages, |
tf 7005 PN313B PN313B abstract |
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| Abstract: PIN Photodiodes PNZ0328 PNZ0328 PIN Photodiode Unit : mm 6.0�2 7.5�2 (2) 5.5�2 1.0 For optical control systems Not soldered 1.5 max. 4.6�2 2.3 Chip Features 22.25�0 High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting diodes : P = 960 nm (typ.) 1.32 0.5 31.25�0 1.5�2 Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) 2- 0.6�1 0.5 (1.5) Wide detection ... | Original |
1 pages, |
PNZ0328 PNZ0328 abstract |
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| Abstract: PIN Photodiodes Panasonic PN328B PN328B PIN Photodiode For optical control systems â- Features • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) • High sensitivity, high reliability • Peak sensitivity wavelength matched with infrared light emitting diodes : A,P = 960 nm (typ.) • Wide detection area, wide acceptance half angle : 0 = 70 deg. (typ.) • Adoption of visible light cutoff resin â- Absolute Maximum Ratings (Ta = 25°C) Parameter Symbol ... | OCR Scan |
1 pages, |
PN328B PN328B abstract |
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| Abstract: LED lamp ELD-960-525 ELD-960-525 Radiation Type Technology Case Infrared ELD-960-525 ELD-960-525 AIGaAs/GaAs/GaAs 5 mm plastic lens Description Applications High-power, high-speed, Optical communications, heterostructure, safety equipment with standoff leads 9.« 31.8.,.7 Note: Special packages without standoff available on request Maximum Ratings Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol Value Unit Forward current (DC) If 100 mA Peak forward current ... | OCR Scan |
1 pages, |
ELD-960-525 2s 525 ELD-960-525 abstract |
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| Abstract: PD414PI PD414PI High Speed PIN Photodiode for Optical Space Transmission AVequipraen flTiiilillili Persona; computers « Portable information temami equipraesi FEATURES • High speed response (cut-off frequency: 40 MHz) • Built-in visible light cut-off filter (peak sensitivity wavelength: Xp = TYE 960 nm) • Halt intensity angle: A9: ±30° • Lead bending typing compatible ELECTRO-OPTICAL CHARACTERISTICS Ta= 25°C ABSOLUTE MAXIMUM RATINGS Ta= 25°C parameter symbol ratim; unit Reverse wltage ... | OCR Scan |
2 pages, |
PD414PI f 9222 l PD414PI abstract |
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| Abstract: PIN Photodiodes PNZ313B PNZ313B PIN Photodiode Unit : mm For optical control systems 7.0�5 Anode mark �6 Device center 8.0�5 5.0 Features 2-1.2�15 2-0.6�15 0.41�15 13 min. 2.3�3 Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting diodes : P = 960 nm (typ.) 2 Wide detection area, wide acceptance half angle : = 65 deg ... | Original |
2 pages, |
PNZ313B PNZ313B abstract |
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| Abstract: LED - Chip EL-950-11 EL-950-11 Preliminary 10.04.2007 rev. 01/06 Radiation Type Technology Electrodes Infrared DH AlGaAs/GaAs P (anode) up typ. dimensions (um) 1000 typ. thickness 270 (±25) um 1000 cathode gold alloy, 0.5 um structured, 25% covered anode gold alloy, 1.5 um PoC-05 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit Forward voltage ... | Original |
1 pages, |
EL-950-11 EL-950-11 abstract |
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