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ASA1-40.950MHZ-L-T Abracon Corporation Oscillator, 1MHz Min, 80MHz Max, 40.95MHz Nom visit Digikey
ASA-40.950MHZ-L-T3 Abracon Corporation Oscillator, 1MHz Min, 80MHz Max, 40.95MHz Nom visit Digikey
ASA1-40.950MHZ-L-T3 Abracon Corporation Oscillator, 1MHz Min, 80MHz Max, 40.95MHz Nom visit Digikey
ASA2-40.950MHZ-L-T Abracon Corporation Oscillator, 1MHz Min, 80MHz Max, 40.95MHz Nom visit Digikey
ASA-40.950MHZ-L-T Abracon Corporation Oscillator, 1MHz Min, 80MHz Max, 40.95MHz Nom visit Digikey
ASA2-40.950MHZ-L-T3 Abracon Corporation Oscillator, 1MHz Min, 80MHz Max, 40.95MHz Nom visit Digikey

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Part : ASA-40.950MHZ-L-T Supplier : Abracon Manufacturer : Avnet Stock : - Best Price : $0.7952 Price Each : $1.4474
Part : ASA-40.950MHZ-L-T3 Supplier : Abracon Manufacturer : Avnet Stock : - Best Price : $0.7024 Price Each : $1.3816
Part : ASA1-40.950MHZ-L-T Supplier : Abracon Manufacturer : Avnet Stock : - Best Price : $0.7952 Price Each : $1.4474
Part : ASA1-40.950MHZ-L-T3 Supplier : Abracon Manufacturer : Avnet Stock : - Best Price : $0.7024 Price Each : $1.3816
Part : ASA2-40.950MHZ-L-T Supplier : Abracon Manufacturer : Avnet Stock : - Best Price : $0.7952 Price Each : $1.4474
Part : ASA2-40.950MHZ-L-T3 Supplier : Abracon Manufacturer : Avnet Stock : - Best Price : $0.7024 Price Each : $1.3816
Part : VF150A-9.99950MHZ Supplier : Valpey Fisher Manufacturer : Bristol Electronics Stock : 50 Best Price : $2.24 Price Each : $4.48
Part : ASA-40.950MHZ-L-T Supplier : Abracon Manufacturer : Sager Stock : - Best Price : $0.8708 Price Each : $1.48
Part : ASA-40.950MHZ-L-T3 Supplier : Abracon Manufacturer : Sager Stock : - Best Price : $0.8387 Price Each : $1.38
Part : ASA1-40.950MHZ-L-T Supplier : Abracon Manufacturer : Sager Stock : - Best Price : $0.8708 Price Each : $1.48
Part : ASA1-40.950MHZ-L-T3 Supplier : Abracon Manufacturer : Sager Stock : - Best Price : $0.8387 Price Each : $1.38
Part : ASA2-40.950MHZ-L-T Supplier : Abracon Manufacturer : Sager Stock : - Best Price : $0.8708 Price Each : $1.48
Part : ASA2-40.950MHZ-L-T3 Supplier : Abracon Manufacturer : Sager Stock : - Best Price : $0.8387 Price Each : $1.38
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950MHz

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: WIDE BAND MULTILAYER CERAMIC ANTENNA FOR 850~950MHz Product Specification1 (Preliminary) QUICK REFERENCE DATA Size 16.5*14*0.9 mm Working Frequency 850~950MHz Gain 1.5 dBi Max VSWR , Multilayer Ceramic Antenna (LP Mode) for 850~950MHz Grant/Cliff. spec.doc Oct. 14, 02 PHYCOMP Ltd , Mar. 13, 02 Multilayer Ceramic Antenna (LP Mode) for 850~950MHz Grant/Cliff. spec.doc Oct. 14 , Mode) for 850~950MHz Grant/Cliff. spec.doc Oct. 14, 02 PHYCOMP Ltd. 4311 119 00087 -
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Material phycomp 225 antenna 4311 Phycomp 950MH AN0870000716141B 870MH
Abstract: REP026: Direct-Conversion Tuner Optimized for Operation from 950MHz to 1750MHz Abstract: This , 950MHz to 1750MHz operation. Rapid engineering prototypes are real circuits that Maxim application , the MAX2108 direct-conversion tuner for operation from 950MHz to 1750MHz. A reference evaluation , operating frequency range spans from 950MHz to 2150MHz. The MAX2108 includes a low-noise amplifier with , divide-by-32/33 prescaler. Specifications for Optimized Operation at 950MHz to 1750MHz Item Requirements Maxim Integrated Products
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MAX4145 AN1986 APP1986 circuit board satellite tuner schematic circuit board satellite tuner low-noise L-band tuner 950-MHz line AMPLIFIER satellite 1750MH 1300MH 1749MH 1751MH 1740MH
Abstract: WIDE BAND MULTILAYER CERAMIC ANTENNA FOR 850~950MHz Product Specification1 (Preliminary) QUICK REFERENCE DATA Working Frequency 850~950MHz Gain 1.5 dBi Max VSWR 2 max Polarization , 850~950MHz Grant/Cliff. spec.doc 2002-01-07 PHYCOMP Ltd. 4311 119 00087 Page 1/7 sheet , Multilayer Ceramic Antenna (LP Mode) for 850~950MHz Grant/Cliff. spec.doc 2002-01-07 PHYCOMP Ltd , Preliminary use only Oct. 24, 01 Multilayer Ceramic Antenna (LP Mode) for 850~950MHz Grant/Cliff -
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12NC ordering code AN0870000716141F
Abstract: Transistor, 175MHz, 950MHz, 4W DESCRIPTION RD04HMS2 is MOS FET type transistor specifically OUTLINE , =14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode 2 3 (0.25 , , 175MHz, 950MHz, 4W ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH , =10V, VDS=0V VDS=12V, IDS=1mA f=950MHz*,VDS=12.5V, Pin=0.2W, Idq=0.1A f=175MHz*,VDS=12.5V, Pin=0.2W, Idq , ) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W TYPICAL CHARACTERISTICS Mitsubishi
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mos 4069 175MH VHF/UHF/890-950MH UHF/890-950MH
Abstract: RD04HMS2 6.0+/-0.15 0.2+/-0.05 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W , Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate , =1mA f=950MHz*,VDS=12.5V, Pin=0.2W, Idq=0.1A f=175MHz*,VDS=12.5V, Pin=0.2W, Idq=0.1A VDS=15.2V, Po , , Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W TYPICAL CHARACTERISTICS (These are only typical , HANDLING PRECAUTIONS RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W Mitsubishi
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Handling Precautions for MOSFET 043mm 14dBtyp
Abstract: WIDE BAND MULTILAYER CERAMIC ANTENNA FOR 850~950MHz Product Specification1 (Preliminary) QUICK REFERENCE DATA Working Frequency 850~950MHz Gain 1.5 dBi Max VSWR 2 max Polarization , 850~950MHz Grant/Cliff. spec.doc 2002-01-07 PHYCOMP Ltd. 4311 119 00087 Page 1/7 sheet , Antenna (LP Mode) for 850~950MHz Grant/Cliff. spec.doc 2002-01-07 PHYCOMP Ltd. 4311 119 00087 , only Oct. 24, 01 Multilayer Ceramic Antenna (LP Mode) for 850~950MHz Grant/Cliff. spec.doc -
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Abstract: Correction o Operates from Single +5V Supply o 950MHz to 2150MHz Input Frequency Range* o On-Chip , using a broadband I/Q downconverter. Operating frequency range spans from at least 950MHz to 2150MHz , Power Refers to single-carrier power generating VIOUT = VQOUT = 0.5Vp-p. 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz (Note 4) -19 RFIN Minimum Single-Carrier Input Power Refers to single-carrier power generating VIOUT = VQOUT = 0.5Vp-p. 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz Maxim Integrated Products
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MAX2102 MAX2102CWI TSA5055 MAX1002 MAX1003 MAX4216 2150MH 1450MH MAX1002/MAX1003
Abstract: ANTENNA PRODUCTS WIDE BAND MULTILAYER CERAMIC ANTENNA FOR 850~950MHz Product Specification QUICK , Termination 50 -55~85 oC Ni/Sn (Environmentally-Friendly Leadless) 16.5*14*0.9 mm 850~950MHz 1.5 dBi Max 2 max , , 2006, V4 Print date 07/06/05 2006/8/25 v4 Multilayer Ceramic Antenna (LP Mode) for 850~950MHz , WIDE BAND MULTILAYER CERAMIC ANTENNA FOR 850~950MHz Product Specification QUICK REFERENCE DATA Size , *0.9 mm 850~950MHz -3.41 dBi Max 2.5 max Linear Omni-directional Special Environmental Concerns Yageo
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CAN4313 000871B CAN43
Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 , Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz , Efficiency VSWRT Load VSWR Tolerance CONDITIONS VDS=37V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=950MHz , Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W TYPICAL CHARACTERISTICS (These are only , HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W VHF-band Mitsubishi
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JAPANESE TRANSISTOR 2010 920MHz Diode mark 1445 RD04HMS TRANSISTOR 636
Abstract: PRF = -10dBm, fRF = 950MHz to 2150MHz, VCTRL = +1.0V, TC = -40°C to +85°C. Typical values are for TC , .) PARAMETER Insertion Loss SYMBOL IL TC = +25NC TYP MAX 950MHz to 1500MHz MIN 4.4 6.3 950MHz to 2150MHz 4.4 7.0 TC = -40NC to +85NC Loss Variation Over Temperature , 950MHz to 1500MHz 36 44.7 950MHz to 2150MHz 33 44.7 dB Average Attenuation-Control , +25°C 250MHz 500MHz -20 500MHz -20 4 -30 -30 950MHz 2150MHz 950MHz -40 0 Maxim Integrated Products
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CDMA200 Analog Voltage Variable Attenuator JESD51-7 250MH 4000MH MAX19790 1500MH T3666
Abstract: Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22 , =5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode , Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W ELECTRICAL CHARACTERISTICS (Tc=25° UNLESS , =0V VDS=12V, IDS=1mA f=950MHz*,VDS=12.5V, Pin=0.2W, Idq=0.1A f=175MHz*,VDS=12.5V, Pin=0.2W, Idq , RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W TYPICAL CHARACTERISTICS (These Mitsubishi
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Abstract: +5V Supply 950MHz to 2150MHz Input Frequency Range*, On-Chip Quadrature Generator, Dual-Modulus , MAX 2150 UNITS MHz Refers to single-carrier Dower generating V iout = V qout = 0.5Vp-p 950MHz < fRFiN < 2150MHz, 950MHz < fLO < 2150MHz (Note 4) Refers to single-carrier power generating V iout = Vq out = 0.5Vp-p. 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz (Note 4) 1V < VAGC < 4V -19 dBm , -69dBm to -59dBm fRFIN = 950MHz to 2150MHz, 50Q source -0.5 2.3:1 dB/dB Maximum Power of -
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gdc tv tuner PT 2102 ic TDC 1013 AX210
Abstract: Ordering Code / Part Number Product Description 813-SL95.0M-59A 95.0MHz IF SAW Filter 59.40MHz , Oscilent Part Number 813-SL95.0M-59A 95.0MHz IF SAW Filter 59.40MHz Bandwidth January 2011 Rev A , -SL95.0M-59A January 2011 Rev A 95.0MHz IF SAW Filter 59.40MHz Bandwidth Maximum Ratings Parameters Description , Rev A 95.0MHz IF SAW Filter 59.40MHz Bandwidth Frequency Response Bandwidth at â'"1.0 dB , www.oscilent.com Oscilent Part Number 813-SL95.0M-59A January 2011 Rev A 95.0MHz IF SAW Filter 59.40MHz Oscilent
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J-STD-020C 2002/95/EC
Abstract: IFLK1 IFLK2 IFLK3 Measurement conditions No signal fin = 950MHz, flF = 480MHz fin fin fin fin fin , Unit mA dB dB dB dB dB dB dBm dBm dBm 1 Current consumption = 1450MHz, = 2050MHz, = 950MHz, = , 2200MHz fOSC = 2200 to 2530MHz Pin = -25dBm fin = 950MHz + 960MHz fout = 380MHz + 400MHz S/I of 380MHz and , /Hz dBc/Hz n pF 10 IF output VSWR 11 RF input Impedance = 400MHz f = 950MHz *1) Measured , POSC1 Po(sat) RFLK1 IFLK1 IM3 fin Measurement conditions No signal = 950MHz, = 950MHz, fiF Min -
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CXA3008N-1/-2 CXA3008N-1 CXA3008N-2 480MHZ 470MHZ 935MH
Abstract: , tiF = 480MHz 16 19.5 24.5 dB NF1 fin = 950MHz, fiF = 460MHz 15.5 16.5 dB , CG3 2 Conversion gain *1 fin = 950MHz, fiF = 480MHz fin = 2050MHz, fiF = 480MHz 17.5 19 , fose = 2200 to 2530MHz -28 dBm Pin = -25dBm fin = 950MHz + 960MHz IM3 fout = 380MHz + , IFVSWR f = 400MHz 1.2 f = 950MHz 270 n 4 PF nt Cn *1) Measured value for , 35.5 55.0 73.5 mA CG1 fin = 950MHz, fiF = 480MHz 15.5 20 24 dB CG2 fin -
OCR Scan
CXA3008N-11-2 0G1270 940MH 001B707 G0127D 400MH
Abstract: PRF = -10dBm, fRF = 950MHz to 2150MHz, VCTRL = +1.0V, TC = -40°C to +85°C. Typical values are for TC , +25NC TYP MAX 950MHz to 1500MHz MIN 4.4 6.3 950MHz to 2150MHz 4.4 7.0 TC = , Attenuation-Control Range AR Two attenuators, VCTRL = +1.0V to +4.0V, TC = +25NC 22 950MHz to 1500MHz 36 44.7 950MHz to 2150MHz 33 44.7 dB Average Attenuation-Control Slope VCTRL = , +25°C 250MHz 500MHz -20 500MHz -20 4 -30 -30 950MHz 2150MHz 950MHz -40 0 Maxim Integrated Products
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Abstract: 4.75V to 5.25V, RF ports are driven from 50I sources, input PRF = -10dBm, fRF = 950MHz to 2150MHz, VCTRL , Attenuation-Control Range AR Two attenuators, VCTRL = +1.0V to +4.0V, TC = +25NC 950MHz to 1500MHz 950MHz to 2150MHz , TC = -40NC to +85NC CONDITIONS 950MHz to 1500MHz 950MHz to 2150MHz MIN TYP 4.4 4.4 0.6 23.1 69.6 36.3 , -30 2150MHz -40 4000 1 2 VCTRL (V) 3 950MHz 4 -30 950MHz 2150MHz -40 1 2 VCTRL (V) 3 4 RF , . 4000MHz 100 50 0 500MHz -50 250MHz 1 2 VCTRL (V) 3 4 2150MHz MAX19790 toc09 0 250MHz, 500MHz, 950MHz Maxim Integrated Products
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Abstract: from Single +5V Supply o 950MHz to 2150MHz Input Frequency Range* o On-Chip Quadrature Generator , broadband I/Q downconverter. Operating frequency range spans from at least 950MHz to 2150MHz. The IC , Power Refers to single-carrier power generating VIOUT = VQOUT = 0.5Vp-p. 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz (Note 4) -19 RFIN Minimum Single-Carrier Input Power Refers to single-carrier power generating VIOUT = VQOUT = 0.5Vp-p. 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz Maxim Integrated Products
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10pF capacitor qpsk demod satellite transponder
Abstract: Low-Cost Bipolar Design, Lowest Cost Architecture Operate from a Single +5V Supply 950MHz to 2150MHz , 950MHz to 2150MHz. The ICs include a low-noise amplifier (LNA) with automatic gain control (AGC), two , VQOUT = 0.5Vp-p, 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz (Note 2) -19 RFIN Minimum Single-Carrier Input Power Refers to single-carrier power generating VIOUT = VQOUT = 0.5Vp-p, 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz (Note 2) MAX2102 -69 MAX2105 -60 0.5V VAGC 4V Maxim Integrated Products
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MAX2105CWI 22pf capacitor Dual-Gate Mosfet MAX2102/MAX2105
Abstract: Power Down Current Active Current RX VLIF Mode Low Band (850/950MHz) 64 77 91 mA All , circuits on, (LNA_CURR=00, MIX_CURR=00) Low Band (850/950MHz) 62.5 75.5 89.5 mA All , circuits on, (LNA_CURR=00, MIX_CURR=00) Low Band (850/950MHz) 19.5 25 mA VCC =2.8V, PIN , channel differential as output. Receiver System Cascaded Noise Figure Low Band (850/950MHz) 2.8 , ) 336-678-5570 or sales-support@rfmd.com. Rev A4 DS050919 RF2722 Proposed Low Band (850/950MHz) 4.8 RF Micro Devices
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RF6003 lna 30MHz to DCS 1800 RX SAW Filter J156 quadrature mixer RF2722PCBA-41X GSM850 GSM850/PCS GSM850/EGSM/DCS/PCS
Abstract: RD04HMS2 6.0+/-0.15 0.2+/-0.05 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W , Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate , =1mA f=950MHz*,VDS=12.5V, Pin=0.2W, Idq=0.1A f=175MHz*,VDS=12.5V, Pin=0.2W, Idq=0.1A VDS=15.2V, Po , , Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W TYPICAL CHARACTERISTICS (These are only typical , HANDLING PRECAUTIONS RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W NEC
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PC8130TA GRM39 PDC800M PC8131TA PC8119T PC8120T
Abstract: Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22 , =5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode , Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W ELECTRICAL CHARACTERISTICS (Tc=25° UNLESS , =0V VDS=12V, IDS=1mA f=950MHz*,VDS=12.5V, Pin=0.2W, Idq=0.1A f=175MHz*,VDS=12.5V, Pin=0.2W, Idq , RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W TYPICAL CHARACTERISTICS (These Renesas Electronics
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Abstract: Low-Cost Bipolar Design, Lowest Cost Architecture o Operate from a Single +5V Supply o 950MHz to 2150MHz , 950MHz to 2150MHz. The ICs include a low-noise amplifier (LNA) with automatic gain control (AGC), two , VQOUT = 0.5Vp-p, 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz (Note 2) -19 RFIN Minimum Single-Carrier Input Power Refers to single-carrier power generating VIOUT = VQOUT = 0.5Vp-p, 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz (Note 2) MAX2102 -69 MAX2105 -60 0.5V VAGC 4V NXP Semiconductors
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BGA2851
Abstract: Correction o Operates from Single +5V Supply o 950MHz to 2150MHz Input Frequency Range* o On-Chip , using a broadband I/Q downconverter. Operating frequency range spans from at least 950MHz to 2150MHz , Power Refers to single-carrier power generating VIOUT = VQOUT = 0.5Vp-p. 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz (Note 4) -19 RFIN Minimum Single-Carrier Input Power Refers to single-carrier power generating VIOUT = VQOUT = 0.5Vp-p. 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz NEC
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UC 4863 ic isl 887 PU10413EJ01V0DS
Abstract: ANTENNA PRODUCTS WIDE BAND MULTILAYER CERAMIC ANTENNA FOR 850~950MHz Product Specification QUICK , Termination 50 -55~85 oC Ni/Sn (Environmentally-Friendly Leadless) 16.5*14*0.9 mm 850~950MHz 1.5 dBi Max 2 max , , 2006, V4 Print date 07/06/05 2006/8/25 v4 Multilayer Ceramic Antenna (LP Mode) for 850~950MHz , WIDE BAND MULTILAYER CERAMIC ANTENNA FOR 850~950MHz Product Specification QUICK REFERENCE DATA Size , *0.9 mm 850~950MHz -3.41 dBi Max 2.5 max Linear Omni-directional Special Environmental Concerns NXP Semiconductors
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BGA2817
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