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CC1100E-EMK950 Texas Instruments CC1100E Evaluation Module 950MHz ri Buy
CC1190RGVT Texas Instruments 850 - 950MHz RF Front End 16-VQFN -40 to 85 ri Buy Buy
CC1190RGVR Texas Instruments 850 - 950MHz RF Front End 16-VQFN -40 to 85 ri Buy Buy

950MHz

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: WIDE BAND MULTILAYER CERAMIC ANTENNA FOR 850~950MHz Product Specification1 (Preliminary) QUICK REFERENCE DATA Size 16.5*14*0.9 mm Working Frequency 850~950MHz Gain 1.5 dBi Max VSWR , Multilayer Ceramic Antenna (LP Mode) for 850~950MHz Grant/Cliff. spec.doc Oct. 14, 02 PHYCOMP Ltd , Mar. 13, 02 Multilayer Ceramic Antenna (LP Mode) for 850~950MHz Grant/Cliff. spec.doc Oct. 14 , Mode) for 850~950MHz Grant/Cliff. spec.doc Oct. 14, 02 PHYCOMP Ltd. 4311 119 00087 ... Original
datasheet

8 pages,
273.36 Kb

Phycomp 4311 225 antenna Material phycomp TEXT
datasheet frame
Abstract: REP026 REP026: Direct-Conversion Tuner Optimized for Operation from 950MHz to 1750MHz Abstract: This , 950MHz to 1750MHz operation. Rapid engineering prototypes are real circuits that Maxim application , the MAX2108 MAX2108 direct-conversion tuner for operation from 950MHz to 1750MHz. A reference evaluation , operating frequency range spans from 950MHz to 2150MHz. The MAX2108 MAX2108 includes a low-noise amplifier with , divide-by-32/33 prescaler. Specifications for Optimized Operation at 950MHz to 1750MHz Item Requirements ... Maxim Integrated Products
Original
datasheet

3 pages,
43.05 Kb

video balun schematic AN1986 APP1986 Appnote19 L-band Tuner line AMPLIFIER satellite MAX4145 rep026 950-MHz MAX2108 low-noise L-band tuner schematic circuit board satellite tuner circuit board satellite tuner TEXT
datasheet frame
Abstract: WIDE BAND MULTILAYER CERAMIC ANTENNA FOR 850~950MHz Product Specification1 (Preliminary) QUICK REFERENCE DATA Working Frequency 850~950MHz Gain 1.5 dBi Max VSWR 2 max Polarization , 850~950MHz Grant/Cliff. spec.doc 2002-01-07 PHYCOMP Ltd. 4311 119 00087 Page 1/7 sheet , Multilayer Ceramic Antenna (LP Mode) for 850~950MHz Grant/Cliff. spec.doc 2002-01-07 PHYCOMP Ltd , Preliminary use only Oct. 24, 01 Multilayer Ceramic Antenna (LP Mode) for 850~950MHz Grant/Cliff ... Original
datasheet

8 pages,
305.01 Kb

4311 12NC ordering code Material phycomp TEXT
datasheet frame
Abstract: Transistor, 175MHz, 950MHz, 4W DESCRIPTION RD04HMS2 RD04HMS2 is MOS FET type transistor specifically OUTLINE , =14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode 2 3 (0.25 , , 175MHz, 950MHz, 4W ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH , =10V, VDS=0V VDS=12V, IDS=1mA f=950MHz*,VDS=12.5V, Pin=0.2W, Idq=0.1A f=175MHz*,VDS=12.5V, Pin=0.2W, Idq , ) > RD04HMS2 RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W TYPICAL CHARACTERISTICS ... Mitsubishi
Original
datasheet

21 pages,
1200.51 Kb

mos 4069 RD04HMS2 TEXT
datasheet frame
Abstract: RD04HMS2 RD04HMS2 6.0+/-0.15 0.2+/-0.05 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W , Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate , =1mA f=950MHz*,VDS=12.5V, Pin=0.2W, Idq=0.1A f=175MHz*,VDS=12.5V, Pin=0.2W, Idq=0.1A VDS=15.2V, Po , , Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W TYPICAL CHARACTERISTICS (These are only typical , HANDLING PRECAUTIONS RD04HMS2 RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W ... Mitsubishi
Original
datasheet

20 pages,
1148.97 Kb

14dBtyp 043mm RD04HMS2 TEXT
datasheet frame
Abstract: WIDE BAND MULTILAYER CERAMIC ANTENNA FOR 850~950MHz Product Specification1 (Preliminary) QUICK REFERENCE DATA Working Frequency 850~950MHz Gain 1.5 dBi Max VSWR 2 max Polarization , 850~950MHz Grant/Cliff. spec.doc 2002-01-07 PHYCOMP Ltd. 4311 119 00087 Page 1/7 sheet , Antenna (LP Mode) for 850~950MHz Grant/Cliff. spec.doc 2002-01-07 PHYCOMP Ltd. 4311 119 00087 , only Oct. 24, 01 Multilayer Ceramic Antenna (LP Mode) for 850~950MHz Grant/Cliff. spec.doc ... Original
datasheet

7 pages,
265.09 Kb

Material phycomp AN0870000716141F 225 antenna TEXT
datasheet frame
Abstract: Correction o Operates from Single +5V Supply o 950MHz to 2150MHz Input Frequency Range* o On-Chip , using a broadband I/Q downconverter. Operating frequency range spans from at least 950MHz to 2150MHz , Power Refers to single-carrier power generating VIOUT = VQOUT = 0.5Vp-p. 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz (Note 4) -19 RFIN Minimum Single-Carrier Input Power Refers to single-carrier power generating VIOUT = VQOUT = 0.5Vp-p. 950MHz < fRFIN < 2150MHz, 950MHz < fLO < 2150MHz ... Maxim Integrated Products
Original
datasheet

16 pages,
140.64 Kb

MAX4216 MAX2102CWI MAX2102 MAX1003 MAX1002 TSA5055 TEXT
datasheet frame
Abstract: ANTENNA PRODUCTS WIDE BAND MULTILAYER CERAMIC ANTENNA FOR 850~950MHz Product Specification QUICK , Termination 50 -55~85 oC Ni/Sn (Environmentally-Friendly Leadless) 16.5*14*0.9 mm 850~950MHz 1.5 dBi Max 2 max , , 2006, V4 Print date 07/06/05 2006/8/25 v4 Multilayer Ceramic Antenna (LP Mode) for 850~950MHz , WIDE BAND MULTILAYER CERAMIC ANTENNA FOR 850~950MHz Product Specification QUICK REFERENCE DATA Size , *0.9 mm 850~950MHz -3.41 dBi Max 2.5 max Linear Omni-directional Special Environmental Concerns ... Yageo
Original
datasheet

14 pages,
236.72 Kb

TEXT
datasheet frame
Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 , Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz , Efficiency VSWRT Load VSWR Tolerance CONDITIONS VDS=37V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=950MHz , Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W TYPICAL CHARACTERISTICS (These are only , HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W VHF-band ... Mitsubishi
Original
datasheet

20 pages,
1143.32 Kb

TRANSISTOR 636 RD04HMS Diode mark 1445 920MHz JAPANESE TRANSISTOR 2010 RD04HMS2 TEXT
datasheet frame
Abstract: PRF = -10dBm, fRF = 950MHz to 2150MHz, VCTRL = +1.0V, TC = -40°C to +85°C. Typical values are for TC , .) PARAMETER Insertion Loss SYMBOL IL TC = +25NC TYP MAX 950MHz to 1500MHz MIN 4.4 6.3 950MHz to 2150MHz 4.4 7.0 TC = -40NC -40NC to +85NC Loss Variation Over Temperature , 950MHz to 1500MHz 36 44.7 950MHz to 2150MHz 33 44.7 dB Average Attenuation-Control , +25°C 250MHz 500MHz -20 500MHz -20 4 -30 -30 950MHz 2150MHz 950MHz -40 0 ... Maxim Integrated Products
Original
datasheet

11 pages,
1320.47 Kb

JESD51-7 Analog Voltage Variable Attenuator CDMA200 MAX19790 TEXT
datasheet frame
Abstract: RD04HMS2 RD04HMS2 6.0+/-0.15 0.2+/-0.05 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W , Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate , =1mA f=950MHz*,VDS=12.5V, Pin=0.2W, Idq=0.1A f=175MHz*,VDS=12.5V, Pin=0.2W, Idq=0.1A VDS=15.2V, Po , , Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W TYPICAL CHARACTERISTICS (These are only typical , HANDLING PRECAUTIONS RD04HMS2 RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W ... NEC
Original
datasheet

40 pages,
387.33 Kb

PDC800M PC8130TA GRM39 PC8131TA TEXT
datasheet frame
Abstract: Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22 , =5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode , Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W ELECTRICAL CHARACTERISTICS (Tc=25° UNLESS , =0V VDS=12V, IDS=1mA f=950MHz*,VDS=12.5V, Pin=0.2W, Idq=0.1A f=175MHz*,VDS=12.5V, Pin=0.2W, Idq , RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W TYPICAL CHARACTERISTICS (These ... Renesas Electronics
Original
datasheet

42 pages,
442.61 Kb

TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
a range of frequencies from 400 to 950MHz. The differential PECL output can be configured to be the SY89430V SY89430V PROGRAMMABLE FREQUENCY SYNTHESIZER (50MHz to 950MHz) SY89430V SY89430V PROGRAMMABLE FREQUENCY SYNTHESIZER (50MHz to 950MHz) General Description The SY89430V SY89430V is a general purpose, synthesized clock source Features 3.3V and 5V power supply options 50MHz to 950MHz
/datasheets/files/micrel/products/products/sy89430v.html
Micrel 26/06/2002 6.37 Kb HTML sy89430v.html
connectors, for fast evaluation in a 50 W environment. The RF and LO input frequency range is 950MHz to Direct-Conversion Signal Tuning from 950MHz to 2150MHz, to I/Q Baseband Input Levels: -69dBm to -19dBm per
/datasheets/files/maxim/0009/quick222.htm
Maxim 04/04/2001 5.75 Kb HTM quick222.htm
+17dBm Typical Input IP3 (at 950MHz) +6dBm IF Input for 1dB RF Output Compression Integrated delivers +17dBm typical input 3rd order intercept point at 950MHz, and +15.5dBm IIP3 at 1900MHz, with IF (950MHz Output) $125.00 DC426B DC426B LT5511EFE LT5511EFE | High Signal Level Up-Converting Mixer (1900MHz Output
/datasheets/files/linear/product/2189.html
Linear 17/09/2010 14.96 Kb HTML 2189.html
Linear Techonology Product Catalog LT5511 LT5511 - High Signal Level Upconverting Mixer Please Click Here for LT5511 LT5511 Evaluation Kit Wide RF Output Frequency Range to 3000MHz Broadband RF and IF Operation +17dBm Typical Input IP3 (at 950MHz) +6dBm IF Input for 1dB RF Output Compression Integrated LO Buffer point at 950MHz, and +15.5dBm IIP3 at 1900MHz, with IF input signal levels of - 5dBm. The input 1dB
/datasheets/files/linear/c1011/c1723/p2193/p2193-printfriendly.html
Linear 09/02/2007 4.25 Kb HTML p2193-printfriendly.html
Linear Techonology Product Catalog LT5511 LT5511 - High Signal Level Upconverting Mixer Please Click Here for LT5511 LT5511 Evaluation Kit Wide RF Output Frequency Range to 3000MHz Broadband RF and IF Operation +17dBm Typical Input IP3 (at 950MHz) +6dBm IF Input for 1dB RF Output Compression Integrated LO Buffer point at 950MHz, and +15.5dBm IIP3 at 1900MHz, with IF input signal levels of - 5dBm. The input 1dB
/datasheets/files/linear/c1011/c1097/p2193/p2193-printfriendly.html
Linear 21/11/2005 4.2 Kb HTML p2193-printfriendly.html
MAX4005 MAX4005 QuickView Data Sheet   MAX4005 MAX4005 950MHz FET Input Buffer with 75-ohm Output QuickView Data Sheet: CONTAINS KEY INFORMATION FROM THE DATA SHEET FRONT PAGE. For complete information, in Adobe Acrobat format: DOWNLOAD FULL DATA SHEET (PDF) or RECEIVE FULL DATA SHEET VIA E-MAIL as a PDF attachment. this configuration is 0.5. Features 950MHz Bandwidth 350ps Rise/Fall Times 0.11%
/datasheets/files/maxim/0010/quick050.htm
Maxim 04/04/2001 5.48 Kb HTM quick050.htm
Broadband RF and IF Operation +17dBm Typical Input IP3 (at 950MHz) +6dBm IF Input for 1dB RF delivers +17dBm typical input 3rd order intercept point at 950MHz, and +15.5dBm IIP3 at 1900MHz, with IF
/datasheets/files/linear/c1011/c1097/p2193/p2193-viewall.html
Linear 21/11/2005 8.53 Kb HTML p2193-viewall.html
Broadband RF and IF Operation +17dBm Typical Input IP3 (at 950MHz) +6dBm IF Input for 1dB RF delivers +17dBm typical input 3rd order intercept point at 950MHz, and +15.5dBm IIP3 at 1900MHz, with IF
/datasheets/files/linear/c1011/c1723/p2193/p2193-viewall.html
Linear 09/02/2007 9.79 Kb HTML p2193-viewall.html
MAX2430 MAX2430 silicon RF power amplifier. They enable testing of all MAX2430 MAX2430 functions over the 800MHz to 950MHz Tunable from 800MHz to 950MHz TTL/CMOS-Compatible Shutdown Input Easy Testing of All MAX2430 MAX2430
/datasheets/files/maxim/0009/quick258.htm
Maxim 04/04/2001 5.78 Kb HTM quick258.htm
range spans from at least 950MHz to 2150MHz. The ICs include a low-noise amplifier (LNA) with automatic Architecture Operate from a Single +5V Supply 950MHz to 2150MHz Input Frequency Range* On-Chip
/datasheets/files/maxim/0009/quick221.htm
Maxim 04/04/2001 6.6 Kb HTM quick221.htm