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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: THERMAL STABILITY . COMMON SOURCE CONFIGURATION - Pout = 60 W with 11.5 dB gain @ 945 MHz . BeO FREE , power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 , Vds = 28 V f = 1 MHz 4.0 PF DYNAMIC Symbol Parameter Min. Typ. Max. Unit Pout f = 945 MHz Vdd = 28V Idq = 100 mA 60 W Gps f = 945 MHz Vdd = 28 V Pout = 60 W Idq = 1 00 mA 11.5 15 dB T|d f = 945 MHz Vdd = 28 V Pout = 60 W IDq = 100 mA 53 60 % Load Mismatch f = 945 MHz Vdd = 28 V Pout = 60 W Idq ... | OCR Scan |
3 pages, |
SD57060-01 M250 945 TRANSISTOR transistor d 945 c 945 transistor transistor c 945 SD57060-01 abstract |
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| Abstract: SD57060 SD57060 RF & MICROWAVE TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION - Pout = 60 W with 11.5 dB gain @ 945 MHz . BeO FREE PACKAGE , transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The , 945 MHz Vdd = 28V Idq = 100 mA 60 W Gps f = 945 MHz Vdd = 28 V Pout = 60 W Idq = 1 00 mA 11.5 15 dB T|d f = 945 MHz Vdd = 28 V Pout = 60 W IDq = 100 mA 53 60 % Load Mismatch f = 945 MHz Vdd = 28 ... | OCR Scan |
3 pages, |
transistor 945 SD57060 m243 transistor C 945 945 TRANSISTOR SD57060 abstract |
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| Abstract: 17.3 dB gain @ 945 MHz · BeO FREE PACKAGE · HIGH GAIN M243 epoxy sealed · ESD PROTECTION DESCRIPTION The LET9060C LET9060C is an N-Channel enhancement-mode lateral Field-Effect RF power transistor, designed , Test Conditions Min. Typ. 60 65 W f = 945 MHz 17.3 dB POUT = 60 W f = 945 MHz 60 % POUT = 60 W f = 945 MHz P1dB VDD = 26 V IDQ = 250 mA GP VDD = 26 V , ANGLES Load mismatch f = 945 MHz Max. 5:1 IMPEDANCE DATA D ZDL Typical Input ... | Original |
5 pages, |
transistor d 945 transistor C 945 M243 LET9060C 945 TRANSISTOR LET9060C abstract |
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| Abstract: with 14 dB gain @ 945 MHz / 28V · NEW RF PLASTIC PACKAGE DESCRIPTION The PD57030 PD57030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad , Test Conditions Min. Typ. Max. Unit POUT VDS = 28V IDQ = 50 mA f = 945 MHz 30 GP VDS = 28V IDQ = 50 mA POUT = 30 W f = 945 MHz 13 14 dB D VDS = 28V IDQ = 50 mA POUT = 30 W f = 945 MHz 45 53 % VDS = 28V IDQ = 50 mA ALL PHASE ANGLES ... | Original |
8 pages, |
transistor d 945 transistor C 945 PD57030 capacitor 0.1uf 500v AN1294 945 TRANSISTOR PD57030S SMD surface mount transistor BR d5703 PD57030 abstract |
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| Abstract: gain @ 945 MHz / 28V · NEW RF PLASTIC PACKAGE DESCRIPTION The PD57030 PD57030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial , Max. Unit POUT VDS = 28V IDQ = 50 mA f = 945 MHz 30 GP VDS = 28V IDQ = 50 mA POUT = 30 W f = 945 MHz 13 14 dB D VDS = 28V IDQ = 50 mA POUT = 30 W f = 945 MHz 45 53 % IDQ = 50 mA VDS = 28V ALL PHASE ANGLES POUT = 30 W f = 945 MHz Load ... | Original |
8 pages, |
transistor C 945 transistor 945 PD57030 AN1294 945 TRANSISTOR PD57030S capacitor 0.1uf 500v PD57030 abstract |
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| Abstract: LET9060F LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs , gain @ 945 MHz BeO free package In compliance with the 2002/95/EC 2002/95/EC european directive , field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies , ; IDQ = 400 mA; PIN = 1.5 W; f = 945 MHz 60 75 - W GPS VDD = 28 V; IDQ = 400 mA; POUT = 60 W; f = 945 MHz 16 18 - dB VDD = 28 V; IDQ = 400 mA; PIN = 1.5 W; f = 945 MHz ... | Original |
9 pages, |
M250 LET9060F 945 TRANSISTOR 2L TRANSISTOR LET9060F abstract |
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| Abstract: LET9060C LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs , gain @ 945 MHz BeO free package In compliance with the 2002/95/EC 2002/95/EC european directive , field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies , ; IDQ = 400 mA; PIN = 1.5 W; f = 945 MHz 60 75 - W GPS VDD = 28 V; IDQ = 400 mA; POUT = 60 W; f = 945 MHz 16 18 - dB VDD = 28 V; IDQ = 400 mA; PIN = 1.5 W; f = 945 MHz ... | Original |
9 pages, |
M243 LET9060C 945 TRANSISTOR transistor d 945 2L TRANSISTOR LET9060C abstract |
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| Abstract: 30 W with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57030-01 SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and , 945 MHz I DQ = 50 mA 30 G PS V DD = 28 V P out = 30 W IDQ = 50 mA 13 14 dB D V DD = 28 V P out = 30 W IDQ = 50 mA 50 60 % Load f = 945 MHz V DD = 28 V , Output Power vs Supply Voltage Output Power vs Gate Source Voltage 3/7 SD57030-01 SD57030-01 945 MHz ... | Original |
7 pages, |
XSD57030-01 transistor L 945 SD57030-01 M250 h 945 p 945 TRANSISTOR transistor G 945 SD57030-01 abstract |
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| Abstract: 2sc 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RY TO THE FNP TYPE 2SA733 2SA733. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current Base Current Base Current Total Power Dissipation @ Ta=25°C Operating Junction & Storage Temperature 2SC 945 NPN SILICON PIANAR EPITAXIAL TRANSISTOR CASE T0-92B T0-92B vcbo vceo VeBO ic(dc) ic(pulse)* ib(dc) ib(fulse) * Ptot Tj, Tstg ECB 60V 50V 5V 100mA 200mA ... | OCR Scan |
1 pages, |
2SA733 lc 945 p transistor oms 450 TRANSISTOR 2SC transistor 945 transistor amplifier 5v to 6v 945 npn 945 TRANSISTOR transistor 2sc 945 lc 945 transistor 2sc 945 p transistor transistor c 945 T0-92B 2SA733 abstract |
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| Abstract: with 15 dB gain @ 945 MHz / 28V · NEW LEADLESS PLASTIC PACKAGE PowerFLATTM(5x5) DESCRIPTION The PD57006-01 PD57006-01 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is , Min. Typ. Max. Unit POUT VDD = 28 V IDQ = 70 mA f = 945 MHz 6 GP VDD = 28 V IDQ = 70 mA POUT = 6 W f = 945 MHz 14 15 dB D VDD = 28 V IDQ = 70 mA POUT = 6 W f = 945 MHz 45 50 % IDQ = 70 mA VDD = 28 V ALL PHASE ANGLES POUT = 6 W f = ... | Original |
4 pages, |
transistor C 945 PD57006-01 PD57006 945 TRANSISTOR PD57006-01 abstract |
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| 2PC945_4 Product information page 2PC945; NPN general purpose transistor General info NPN transistor in a TO-92 (SOT54) plastic package. PNP complement: 2PA733P 2PA733P 2PA733P 2PA733P Publication releasedate Datsheet status Page count File size 2PC945 NPN general purpose transistor 8-11-2004 Product Specification 6.0 51.1 Products www.datasheetarchive.com/files/philips/pip/2pc945_4.html |
Philips | 15/06/2005 | 5.14 Kb | HTML | 2pc945_4.html |
| Product listing 2PA733P 2PA733P 2PA733P 2PA733P - PNP general purpose transistor 2PC945P - NPN general purpose transistor BF420 BF420 BF420 BF420 - NPN high-voltage transistors BF422 BF422 BF422 BF422 - NPN high-voltage transistors BF422L BF422L BF422L BF422L - NPN high-voltage transistor BFV420 BFV420 BFV420 BFV420 - NPN high-voltage transistor BFV421 BFV421 BFV421 BFV421 - PNP high-voltage transistor PDTA124ES PDTA124ES PDTA124ES PDTA124ES - PNP resistor-equipped transistor PDTA144ES PDTA144ES PDTA144ES PDTA144ES - PNP resistor-equipped transistor www.datasheetarchive.com/files/philips/catalog/listing/31445.html |
Philips | 17/02/2002 | 7.04 Kb | HTML | 31445.html |
| 2PC945 NPN general purpose transistor 28-mei-99 Product Specification 8 47 2PC945_3 Product information page 2PC945; NPN general purpose transistor General info NPN transistor in a TO-92 (SOT54) plastic package. PNP ) Marking/Packing Specific Package Device Status 2PC945P 2PC945P T/R 9340 001 20116 Standard Marking * Reel Pack, Radial SOT54 RFS 2PC945P 2PC945 www.datasheetarchive.com/files/philips/pip/2pc945_3.html |
Philips | 23/04/2003 | 2.97 Kb | HTML | 2pc945_3.html |
| 2PC945_3 2PC945 NPN general purpose transistor NPN transistor in a TO-92 (SOT54) plastic package. PNP complement: 2PA733 2PA733 2PA733 2PA733 ) 2PC945 NPN general purpose transistor 28-May-99 Product Specification 8 945P 400 100 500 500 200 200 500 100 500 500 50 www.datasheetarchive.com/files/philips/pip/2pc945_3-v1.html |
Philips | 14/02/2002 | 11.66 Kb | HTML | 2pc945_3-v1.html |
| _4 2PA733 2PA733 2PA733 2PA733 PNP general purpose transistor PNP transistor in a TO-92 (SOT54) plastic package. NPN complement: 2PC945 100 100 500 2PC945P 200 50 500 100 100 Transistors 50 500 400 400 2PC945P 2PC945P Transistors Category 2PA733P 2PA733P 2PA733P 2PA733P 2PC945P 100 100 400 100 400 500 400 www.datasheetarchive.com/files/philips/pip/2pa733_4-v1.html |
Philips | 14/02/2002 | 9.71 Kb | HTML | 2pa733_4-v1.html |
| 2PC945P - NPN general purpose transistor transistor 2PC4081 2PC4081 2PC4081 2PC4081 - NPN general-purpose transistor 2PC4617 2PC4617 2PC4617 2PC4617 - NPN general-purpose transistor 2PC4617J 2PC4617J 2PC4617J 2PC4617J - NPN general purpose transistor www.datasheetarchive.com/files/philips/catalog/listing/47361.html |
Philips | 01/06/2005 | 14.69 Kb | HTML | 47361.html |
| - [82] Diodes - [61] Transistors - [21] 2PA733P 2PA733P 2PA733P 2PA733P - PNP general purpose transistor 2PC945P - NPN general purpose transistor BF420 BF420 BF420 BF420 - NPN high-voltage transistors BF422 BF422 BF422 BF422 - NPN high-voltage transistors BF422L BF422L BF422L BF422L - NPN high-voltage transistor BFV420 BFV420 BFV420 BFV420 - NPN high-voltage transistor BFV421 BFV421 BFV421 BFV421 - PNP high-voltage transistor PDTA124ES PDTA124ES PDTA124ES PDTA124ES - PNP resistor-equipped transistor PDTA144ES PDTA144ES PDTA144ES PDTA144ES - PNP resistor-equipped transistor PDTC124ES PDTC124ES PDTC124ES PDTC124ES - NPN resistor-equipped transistor PDTC144 PDTC144 PDTC144 PDTC144 www.datasheetarchive.com/files/philips/catalog/219/283/27120/31443/31445/index.htm |
Philips | 17/02/2002 | 54.6 Kb | HTM | index.htm |
| 2PC945P - NPN general purpose transistor transistor 2PC4081 2PC4081 2PC4081 2PC4081 - NPN general-purpose transistor 2PC4617 2PC4617 2PC4617 2PC4617 - NPN general-purpose transistor 2PC4617J 2PC4617J 2PC4617J 2PC4617J - NPN general purpose transistor www.datasheetarchive.com/files/philips/catalog/listing/47360.html |
Philips | 01/06/2005 | 26.47 Kb | HTML | 47360.html |
| 2PC945P - NPN general purpose transistor no SOT54 1 2PC945_4 true www.datasheetarchive.com/download/92820543-612994ZC/products.zip (P:\481.Concise Catalog CD-ROMs\catalog\products\20211.txt) |
Philips | 01/06/2005 | 1234.32 Kb | ZIP | products.zip |
| * KSC945 NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL PARAMETERS *- * Vcbo (60V)& Vceo (50V) * Audio Frequency Amplifier & High Frequency OSC. *- * MODEL PARAMETERS FROM MEASURED DATA: KSC945-Y *- .MODEL KSC945 NPN + LEVEL = 1 + IS = 2.04837E-14 04837E-14 04837E-14 04837E-14 + NF = 1.00099 + ISE = 1.096478E-15 096478E-15 096478E-15 096478E-15 + NE .5 * - * FAIRCHILD BUCHEON S.KOREA CASE: TO-92 PID: KSC945 * AUG-05-2002 AUG-05-2002 AUG-05-2002 AUG-05-2002 CREATION www.datasheetarchive.com/files/fairchild/pdfs/models actual/ksc945.mod |
Fairchild | 22/08/2003 | 1.09 Kb | MOD | ksc945.mod |