905-355 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
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1 - 3 of about 3 for 905-355 |
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First line: DT456P POWERSEMICONDUCTOR High Cell Density DMOS Technology On-State Resistance High Power Current Capability Fast Switching Speed High Transient Tolerance Abstract: .. Capacitance Reverse Transfer Capacitance CISS Coss CRSS 1440 905 355 VOS = -15V -15V , VGS = OV f= 1.0MHz. SWITCHING CHARACTERISTICS Note 2 Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time .. Tags: datasheet abstract.. |
131.91 Kb |
4 Pages |
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First line: National tor" NDT456P P-Channef Enhancement Mode Field Effect Transistor These P-Channel enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance, pr Abstract: .. 1440 905 355. pF pF. llieverse I ransrer ,,/-lING" ,& '" · 0; p~ 20 120 130 130 67 ns ns ns ns nC nC nC. Turn .. Tags: datasheet abstract.. |
207.43 Kb |
6 Pages |
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First line: PAIRCHILD NDT456P Power P-Channel enhancement mode power field effect transistors produced using Fairchiid's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance provide superior switching performance. These devices particul Abstract: .. Capacitance Output Capacitance V Ds =-15V -15V , VGs= OV, f= 1.0 MHz 1440 905 355 pF pF pF. Reverse Transfer Capacitance C'" SWITCHING CHARACTERISTICS No1e2 tD on Tum - On Delay Time Tum - On Rise Time .. Tags: datasheet abstract.. |
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