NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: - 500mVrms Vrc = 4.5V 52 60 dB Vcc = 2 V 60 Gre IW = 900mV,m, R///Í, = 330 Q /75.Q 43 46 49 dB PltUTt ma*) THD=10%, Rj/R,- 330SÍ/75Q 175 220 mW THD lW = 900mV,„„ = 330 Q/75 SJ 1.5 3.0 ... | OCR Scan |
1 pages, |
330D M51503L M51503L abstract |
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| Abstract: V10 = 0V, Read Decoded Output 12 +12 mV Unadjusted Gain V11 V10 = 900mV, Read , Coefficient VI = 900mV, Gain Pot = 2.4k 0.005 %/°C Fast Mode Conversion Control Voltage , V10. Adjust zero potentiometer to give 000mV reading. Apply 900mV to input and adjust gain potentiometer to give 900mV reading. Note 2. Linearity is measured as a difference from a straight line drawn ... | Original |
3 pages, |
NTE2032 application note NTE2032 16 INPUT TO BCD OUTPUT NTE2054 NTE2054 abstract |
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| Abstract: 0V, Read Decoded Output -12 - +12 mV Unadjusted Gain V11 -V10 = 900mV, Read , Coefficient VI = 900mV, Gain Pot = 2.4k - 0.005 - %/°C Fast Mode Conversion Control Voltage , V10. Adjust zero potentiometer to give 000mV reading. Apply 900mV to input and adjust gain potentiometer to give 900mV reading. Note 2. Linearity is measured as a difference from a straight line drawn ... | Original |
3 pages, |
NTE2032 application note NTE2032 NTE2054 NTE2054 abstract |
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| Abstract: 0 1.0 dB Open Loop Gain Gvo V, = 900mVrms -2.6 -0.6 1.0 dB Gain Adjusting Range Gvr V, = 900mV, S1, S2; ON 4.5 6 dB Mute Attenuation Ratio ATTmute V, = 900mV, Mute SW; ON 40 50 dB ... | OCR Scan |
7 pages, |
KA9270D KA9270 KA9270 abstract |
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| Abstract: large as 900mV, does not saturate at the minimum specified VCC input bias voltage of 4.75V. A , VCOMP 3.20V upper clamp ISEN CBOOT FCCM CVCC CPVCC VW range 900mV QHIGH_SIDE UG ... | Original |
2 pages, |
ISL6269A ISL6269 DIODE ug "ESD Diode" CR diode transient TB459 ISL6269 abstract |
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| Abstract: 900mV, the READY LED and the CHRG LED come on and the battery begins a trickle charge at 400mA or 20% , does not exceed 900mV after this time period, the LTC4011 LTC4011 indicates a FAULT, and the trickle charge , the single cell voltage exceeds 900mV, the charger begins charging with the programmed constant ... | Original |
6 pages, |
MOSFET battery charge CHARGER Ni-Mh 10 cells thermistor 10k ohm pwm charge nimh LTC4011 NTC 203 20W resistor 10 ohm 20W resistor DC674A DC674A abstract |
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| Abstract: Unadjusted Gain V11-V10 V11-V10 = 900mV, Read Decoded Output 846 - 954 mV Linearity Notes 1 and , Gain Temperature Coefficient VI = 900mV, Gain Pot = 2.4k - 0.005 - %/oC NOTES: 1. Apply 0V across V11 to V10 . Adjust zero potentiometer to give 000mV reading. Apply 900mV to input and adjust gain potentiometer to give 900mV reading. 2. Linearity is measured as a difference from a ... | Original |
7 pages, |
IC 7433 datasheet CD4511B Types COUNTER LED bcd datasheet IC 7433 Digital Pulse Counter Two Digit pinout 3 digit 7 segment LCD 7433 diagram nor gate 7433 7 segment 7433 ca3162e equivalent ca3161e IC CA3162A CA3162 CA3162A CA3162 abstract |
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| Abstract: -12 - +12 mV Unadjusted Gain V11-V10 V11-V10 = 900mV, Read Decoded Output 846 - 954 , Centered - 10 - uV/oV Gain Temperature Coefficient VI = 900mV, Gain Pot = 2.4k - , reading. Apply 900mV to input and adjust gain potentiometer to give 900mV reading. 2. Linearity is ... | Original |
7 pages, |
7 segment 7433 ca3161e IC ca3162 IC CA3162AE 2N2907 CD405 COUNTER LED bcd data sheet IC 7433 Digital Pulse Counter Two Digit FN1080 pinout 3 digit 7 segment LCD NSD 10S 2N3906 die intersil CA3162 CA3162 abstract |
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| Abstract: Unadjusted Gain V11-V10 V11-V10 = 900mV, Read Decoded Output 846 - 954 mV Linearity Notes 1 and , Gain Temperature Coefficient VI = 900mV, Gain Pot = 2.4k - 0.005 - %/oC NOTES: 1. Apply 0V across V11 to V10 . Adjust zero potentiometer to give 000mV reading. Apply 900mV to input and adjust gain potentiometer to give 900mV reading. 2. Linearity is measured as a difference from a ... | Original |
7 pages, |
pinout 3 digit 7 segment LCD 2N3906 7433 bcd to 7 segment converter CA3162A CA3162AE CD4056B 2N2907 NSD 10S datasheet IC 7433 Digital Pulse Counter Two Digit HP5082 7433 nor gate 7433 CA3162 CA3162A CA3162 abstract |
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| Abstract: Unadjusted Gain V11-V10 V11-V10 = 900mV, Read Decoded Output 846 - 954 mV Linearity Notes 1 and , Gain Temperature Coefficient VI = 900mV, Gain Pot = 2.4k - 0.005 - %/oC NOTES: 1. Apply 0V across V11 to V10 . Adjust zero potentiometer to give 000mV reading. Apply 900mV to input and adjust gain potentiometer to give 900mV reading. 2. Linearity is measured as a difference from a ... | Original |
7 pages, |
pinout 3 digit 7 segment LCD 2N3906 CA3162A CA3162AE 2N2907 CD4056B CA3162 CA3162E ca3162 IC ca3161e IC CA3161E HARRIS CA3161E HP5082-7433 CA3162 abstract |
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| Abstract: Ultraviolet selective thin film sensor UVD 39 Features ·= ·= ·= ·= ·= ·= ·= Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Large photoactive area No focusing lens needed, therefore large usable incident angle No interference filter required Designed to operate in photovoltaic mode TO-39 metal package Maximum Ratings Parameter Symbol Value Unit Topt 0 . +60 °C Reverse voltage VRmax 3 V Forwar ... | Original |
3 pages, |
datasheet abstract |
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| Abstract: LL5817 LL5817 THRU LL5819 LL5819 SCHOTTKY BARRIER DIODES LL-41 LL-41 Features · Low switching losses · Fast recovery time · Guard ring protected MELF · Hermetically sealed glass SMD package Dimensions in mm Applications · Low power, switched-mode power supplies · Rectifying · Polarity protection Absolute Maximum Ratings and Characteristics at 25 OC unless otherwise specified. Parameter Symbols LL5817 LL5817 LL5818 LL5818 LL5819 LL5819 Maximum Repetitive Peak Reverse Voltage Units VRRM 20 30 ... | Original |
1 pages, |
LL5819 LL5818 smd symbols LL5817 LL-41 LL5817 abstract |
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| Abstract: LL5817 LL5817 THRU LL5819 LL5819 SCHOTTKY BARRIER DIODES LL-41 LL-41 Features · Low switching losses · Fast recovery time · Guard ring protected · Hermetically sealed glass SMD package MELF Applications Dimensions in mm · Low power, switched-mode power supplies · Rectifying · Polarity protection Absolute Maximum Ratings and Characteristics @ 25 unless otherwise specified. Symbols LL5817 LL5817 LL5818 LL5818 LL5819 LL5819 Units VRRM 20 30 40 Volts VR 20 30 40 Volts M ... | Original |
1 pages, |
LL5819 LL5818 LL5817 smd symbols LL-41 LL5817 abstract |
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| Abstract: SOT23 NPN SILICON PLANAR VHF TRANSISTOR ISSUE 3 JANUARY 1996 BFS20 BFS20 7 PARTMARKING DETAIL G1 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 4 V Peak Pulse Current ICM 25 mA Continuous Collector Current IC 25 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage T ... | Original |
1 pages, |
BFS20 BFS20 abstract |
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| Abstract: Ultraviolet selective thin film sensor UVD 18 Features · · · · · · · Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Large photoactive area No focusing lens needed, therefore large usable incident angle No interference filter required Designed to operate in photovoltaic mode TO-18 metal package Maximum Ratings Parameter Symbol Value Unit Topt 0 . +60 °C Reverse voltage VRmax 3 V Forward curre ... | Original |
3 pages, |
datasheet abstract |
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| Abstract: Transistors BC560 BC560 USHA (INDIA) LTD SWITCHING AND AF AMPLIFIER HIGH VOLTAGE LOW NOISE TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector Base Capacitance VcBO -50 V Collector Emitter Voltage VcEO -45 V Emitter-Base Voltage Vebo -5 V Collector Current (DC) Ic -100 mA Collector Dissipation Pc 500 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -65~150 1. Collector 2, Base 3. Emitter ELECTRICAL CHARACTERISTICS (Ta = 25°C) hFE ... | OCR Scan |
1 pages, |
BC560 BC560 abstract |
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| Abstract: Transistors BC559 BC559 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE • LOW NOISE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector Base Capacitance VcBO -30 V Collector Emitter Voltage VcEO -30 V Emitter-Base Voltage Vebo -5 V Collector Current (DC) Ic -100 mA Collector Dissipation Pc 500 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -65M50 -65M50 USHA (INDIA) LTD 1. Collector 2. Base 3. Emitter ELECTRICAL CHARACTERISTICS (Ta = 25°C) Charact ... | OCR Scan |
1 pages, |
BC559 BC559 abstract |
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| Abstract: Transistors BC557 BC557 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE • LOW NOISE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector Base Capacitance VcBO -50 V Collector Emitter Voltage VcEO -45 V Emitter-Base Voltage Vebo -5 V Collector Current (DC) Ic -100 mA Collector Dissipation Pc 500 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -65~150 USHA (INDIA) LTD 1. Collector 2. Base 3. Emitter ELECTRICAL CHARACTERISTICS (Ta = 25°C) Charact ... | OCR Scan |
1 pages, |
BC557 Usha transistors bc557 F-301 BC557 abstract |
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| Abstract: Transistors BC556 BC556 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE • LOW NOISE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector Base Capacitance VcBO -80 V Collector Emitter Voltage VcEO -65 V Emitter-Base Voltage Vebo -5 V Collector Current (DC) Ic -100 mA Collector Dissipation Pc 500 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -65M50 -65M50 USHA (INDIA) LTD 1. Collector 2. Base 3. Emitter ELECTRICAL CHARACTERISTICS (Ta = 25°C) Charact ... | OCR Scan |
1 pages, |
BC556 BC556 abstract |
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| = 1kHz, I L = 16mA V so = 775mV V so = 900mV 3 10 % % 2 Sending Noise V MI =0V; V G = 1V; S1 in (b www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1046.htm |
STMicroelectronics | 02/04/1999 | 17.04 Kb | HTM | 1046.htm |
| = 1kHz, I L = 16mA V so = 775mV V so = 900mV 3 10 % % 2 Sending Noise V MI =0V; V G = 1V; S1 in (b www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1046-v1.htm |
STMicroelectronics | 14/06/1999 | 17 Kb | HTM | 1046-v1.htm |
| -900mV 16.68mA NA NA -975mV 360mA NA NA -1.05V 7.85A NA NA | [GND 975mV -24.11mA NA NA 900mV -22.83mA NA NA 825mV -21.46mA NA NA 750 www.datasheetarchive.com/download/70917564-266087ZC/proc_i~1.zip (procfast.ibs) |
Intel | 05/04/1999 | 32.11 Kb | ZIP | proc_i~1.zip |
| élantec, Inc. Application Notes http://www.elantec.com/APPNOTES/download Fine Harmonic Distortion Measurements in the Megahertz Region by Barry Harvey 4-24-95 Harmonic distortion measurements of amplifiers is easily accomplished using a com- mercial test set which includes a low-distortion oscillator. These units work only up to 100Khz or less; at higher frequencies, a low-distortion oscillator and spectrum analyzer are employed. Unfortunately, commercial sinewave os www.datasheetarchive.com/download/8391130-383070ZC/distort.doc |
Metcomp | 13/01/1998 | 878.5 Kb | DOC | distort.doc |
| -900mV 16.68mA NA NA -975mV 360mA NA NA -1.05V 7.85A NA NA | [GND 975mV -24.11mA NA NA 900mV -22.83mA NA NA 825mV -21.46mA NA NA 750 www.datasheetarchive.com/download/82137304-266303ZC/proc_i~1.zip (procfast.ibs) |
Intel | 05/04/1999 | 32.11 Kb | ZIP | proc_i~1.zip |
| Technical Article: Optical/Electrical Conversion in SDH/SONET Fiber Optic Systems www.datasheetarchive.com/files/maxim/0007/view_094.htm |
Maxim | 04/04/2001 | 29.43 Kb | HTM | view_094.htm |
| (2.5V to 5V) to that of silicon-gate technology (about 900mV). Figure 2. The on www.datasheetarchive.com/files/maxim/0008/view_036.htm |
Maxim | 04/04/2001 | 33.99 Kb | HTM | view_036.htm |
| swing to 900mV. The MAX3664 MAX3664 MAX3664 MAX3664's low 55nA input noise provides a typical sensitivity of -33.2dBm in 1300nm www.datasheetarchive.com/files/maxim/0009/quick357.htm |
Maxim | 04/04/2001 | 6.67 Kb | HTM | quick357.htm |
| |* | National Semiconductor Corporation | Advanced Systems & Interface Products | Data Transmission Products | IBIS Model of DS26C31TN DS26C31TN DS26C31TN DS26C31TN | 16L DIP Package |* | [IBIS Ver] 2.1 [Comment char] |_char [File name] ds26c31.ibs [Fil www.datasheetarchive.com/files/national/docs/wcd0000c/wcd00cc7.txt |
National | 02/04/1998 | 21.43 Kb | TXT | wcd00cc7.txt |
| |* | National Semiconductor Corporation | Interface Products | IBIS Model of DS34C87TM DS34C87TM DS34C87TM DS34C87TM | 16L SOIC Package |* | [IBIS Ver] 2.1 [Comment char] |_char [File name] ds34c87m.ibs [File Rev] 1.0 [Date] 1/15/96 [Source] File originated at National S www.datasheetarchive.com/files/national/docs/wcd0000c/wcd00ccb.txt |
National | 02/04/1998 | 23.49 Kb | TXT | wcd00ccb.txt |