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ISL59441IAZ Intersil Corporation 900MHz Multiplexing Amplifiers; QSOP16; Temp Range: -40° to 85°C visit Intersil
ISL59441IAZ-T13 Intersil Corporation 900MHz Multiplexing Amplifiers; QSOP16; Temp Range: -40° to 85°C visit Intersil
ISL59441IAZ-T7 Intersil Corporation 900MHz Multiplexing Amplifiers; QSOP16; Temp Range: -40° to 85°C visit Intersil
WBC3-1TLB Coilcraft Inc RF Transformer, 0.3MHz Min, 900MHz Max, ROHS COMPLIANT visit Coilcraft
WBC3-1TLC Coilcraft Inc RF Transformer, 0.3MHz Min, 900MHz Max, ROHS COMPLIANT visit Coilcraft

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900MHz Datasheet

Part Manufacturer Description PDF Type
900MHZ Philips Semiconductors Low noise 900MHz preamplifier at 3 V Scan
900MHZ6 Philips Semiconductors GSM power amplifier for 900MHz at 6V Scan
900MHZ-AMP-EVK Freescale Semiconductor RF Evaluation and Development Kits, Boards, RF/IF and RFID, KIT EVALUATION AMPLIFIER 900MHZ Original
900MHZDR Philips Semiconductors 900MHz Driver-Amplifier with the BFG425W Original
900MHz Driver-Amplifier with the BFG425W NXP Semiconductors 900MHz Driver-Amplifier with the BFG425W Original
900 MHz Driver with the BFG480W NXP Semiconductors 900 MHz Driver with the BFG480W Original
900MHz LOW NOISE AMPLIFIER WITH THE BFG403W NXP Semiconductors 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W Original

900MHz

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: resistance () Functions Package IxL (mm) EMIF04-2005QCF 6.1 -35dB at 900MHz 45 R=200 Uni 4 lines filter +ESD EMIF04-1502QCF 6.1 -25dB at 900MHz 22 R=160 Uni 4 lines filter +ESD QFN 8 pins 2.00x2.00 EMIF04-1005M8 6.1 -38dB at 900MHz 52 R=100 Uni 4 lines filter +ESD uQFN-8L 1.7x1.5 EMIF04-1502M8 6.1 -25dB at 900MHz 14 R=170 Uni 4 lines filter +ESD uQFN-8L 1.7x1.5 EMIF04-VID01F2(2) 6.1 -33dB at 900MHz 25 STMicroelectronics
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EMIF06-SD02F3 QFN-8 RF EMIF07-LCD02F3 EMIF02-Mic06 USBDF02W5 STPAC02 SGIPAD0607 900MH ST1394-01SC6 400MH ST1284-01A8 200MH
Abstract: intercept of +0dBm at the input at 900MHz. The mixer has an open-collector output. The chip incorporates a , ports are pre-matched to 50Q at 900MHz. However, user can fine tune the center frequency, if necessary , has a 1.6dB noise figure at 900MHz with 11 dB gain and an !M3 intercept of -6dBm at the input. Input , and 8dB for the mixer at 900MHz · Excellent gain stability versus temperature and supply voltage · , [ APPLICATIONS · 900MHz front end · RF data links · UHF frequency conversion · Portable radio · Spread spectrum -
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NE620 VCO 10GHz philips radio 900MHz NE620DK varactor NE/SA620 800-1200MH
Abstract: OdBm at the input at 900MHz. The nominal current drawn from a single 3V supply is 7.4mA. The Mixer can , from 800-1200MHz. The low-noise preamplifier has a 1,6dB noise figure at 900MHz with 11.5dB gain and an , : 7.4mA nominal, 4.4mA with the mixer power-down â'¢ Outstanding LNA noise figure: 1.6dB at 900MHz â'¢ High system power gain: 18.5dB (LNA + Mixer) at 900MHz â'¢ Excellent gain stability versus temperature and supply voltage â'¢ External >-7dBm LO can be used to drive the mixer APPLICATIONS â'¢ 900MHz -
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SA601 800-1200MHZ filter 900MHz noise figure Mixer Output IP3 41 dBm 817MHz low power dc mixer drawn pin configuration of ic 555
Abstract: -pin uMAX package. Features o RF Output Frequencies: 400MHz to 2.5GHz o Low Noise Figure: 9.3dB (900MHz , Applications GND 2 400MHz/900MHz/2.4GHz ISM Hand-Held Radios 6 IFIN 3 Wireless Local Area , PART ICC (mA) OUTPUT IP3 (dBm) AT 900MHz GAIN (dB) AT 2450MHz LO BUFFER SINGLE-ENDED , , fLO = 445MHz, fRF = 400MHz Conversion Gain 7.0 fIF = 70MHz, fLO = 970MHz, fRF = 900MHz 7.0 , Gain Variation Over Temperature ±1.2 TBD 2 fIF = 70MHz, fLO = 970MHz, fRF = 900MHz 5.7 Maxim Integrated Products
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MAX2673 MAX2671 MAX2660 MAX2661 MAX2663 J530 AAAG MAX2663EUT-T MAX2661EUT-T MAX2660/MAX2661/MAX2663/MAX2671
Abstract: Application Note Application Note 32Mx32 GDDR3 900MHz - Compatibility of 900MHz & 1GHz - , Compatibility : 900MHz/1GHz Application Note Ordering information Part No. Max Freq. Max Data Rate VDD/VDDQ K4J10324QD-HJ1A 1GHz 2.0Gbps 1.85V +/-0.05V N/A 900MHz 1.8Gbps 1.85V +/-0.05V K4J10324QD-HC12/14 800/700MHz 1.6/1.4Gbps 1.8V +/-0.1V · No 900MHz part in Samsung's ordering information 1GHz part has the backward compatibility of 900MHz · Provides the Samsung Electronics
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K4J10324QD-HC12 32Mx32 K4J10324QDHC12 gddr3 K4J10324QD k4j10324qd-hc 800/700MH
Abstract: -6dBm at the input at 900MHz. An external LO can be used in place of the internal VCO for improved , 800-1200MHz. The low-noise preamplifier has a 1.6dB noise figure at 900MHz with 11.5dB gain and an IP3 , : 1.6dB for the amplifier and 9dB for the mixer at 900MHz LNA QNO I? â'¢ Excellent gain stability , '¢ Monotonic VCO frequency vs control voltage jtj VCO OUT APPLICATIONS â'¢ 900MHz cellular front-end â'¢ 900MHz cordless front-end â'¢ Spread spectrum receivers â'¢ RF data links â'¢ UHF frequency conversion -
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SA620
Abstract: [pF] Filter resistance [ ] Functions Package EMIF01-10005W5 6.1 -25 at 900MHz 50 R = 100 Uni 2 line filter + ESD SOT323-5L EMIF10-1K010F2 6.1 -25 at 900MHz , at 900MHz 60 R = 100 Uni 4 line filter + ESD Flip-Chip 2.92 x 1.29 EMIF06-10006F2 6.1 -38 at 900MHz 60 R = 100 Uni 8 line filter + ESD Flip-Chip 2.92 x 1.29 EMIF11-10002C4 6.1 -33 at 900MHz 50 R = 100 Uni 11 line filter + ESD QFN 4.00 x 4.00 Filter STMicroelectronics
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EMIF04-10006F2 LINE FILTER FOR 900MHZ GAL-5 USBUF02W6 ST1284-02A8 EMIF02-USB01 lcd ipad CRIPAD0705 EMIF02-MIC02F2 EMIF02-MIC03F2 EMIF02-SPK01F2 EMIF02-SPK02F2
Abstract: (mA) Max é¡å®šé›»æu 26@ 900MHz 6000 0.045 1360 16 30@ 900MHz 6000 0.070 1040 18 32@ 900MHz 6000 0.070 960 20 41@ 900MHz 6000 0.066 840 , 20 43@ 900MHz 6000 0.066 840 HBWS1005-3N9 3.9@250MHz B,S 20 41@ 900MHz 5800 0.066 840 HBWS1005-5N1 HBWS1005-6N2 5.1@ 250MHz K,J,B 23 49@ 900MHz 5800 0.083 800 5.6@ 250MHz K,J,B 23 46@ 900MHz 5800 0.083 760 6.2@ 250MHz MAKO Semiconductor
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100KHZ HPWS2520-121 HPWS2520-151 HPWS2520-221 HPWS2520-680 HPWS2520-470
Abstract: wide-dynamic-range mixer has an 9dB noise figure and IP3 of -6dBm at the input at 900MHz. An external LO can be used , figure at 900MHz with 11,5dB gain and an IP3 intercept of -3dBm at the input. The gain is stabilized by , : 1.6dB for the amplifier and 9dB for the mixer at 900MHz â'¢ Excellent gain stability versus temperature , APPLICATIONS â'¢ 900MHz cellular front-end â'¢ 900MHz cordless front-end â'¢ Spread spectrum receivers â , UNITS -3o TYP +3a S21 Amplifier gain 900MHz 10 11.5 13 dB S21 Amplifier gain in through mode -
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LNA Mixer VCO 2.4 GHz lna vco mixer 2GHz VCO 1.5 GHz SA7025 SA620DK REF-10
Abstract: wide-dynamic-range mixer has an 8dB noise figure and IM3 intercept of +0dBm at the input at 900MHz. The mixer has an , ports are pre-matched to 50£1 at 900MHz. However, user can fine tune the center frequency, if , communication systems from 800-1200MHz. The low-noise preamplifier has a 1,6dB noise figure at 900MHz with 11dB , '¢ Outstanding noise figure: 1,6dB for the amplifier and 8dB for the mixer at 900MHz e Excellent gain stability , APPLICATIONS e 900MHz front end â'¢ RF data links â'¢ UHF frequency conversion e Portable radio â'¢ Spread -
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amplifier 900mhz 10GHz bandpass filter power ic 501 amp
Abstract: & Output - Single Voltage Supply - Output 1dB compression point : 12dBm at 900MHz SOT343 , TARF2201 Typical Characteristics Output Reflection Coefficient TARF2201_900MHz.S(2,2) TARF2201_1900MHz.S(2,2) TARF2201_900MHz.S(1,1) TARF2201_1900MHz.S(1,1) Input Reflection Coefficient 900MHz App 1900MHz App 1900MHz App 900MHz App freq (500.0MHz to 5.000GHz) freq (500.0MHz to 5.000GHz) Fig1. Input/Output Impedance 0 0 -5 dB(TARF2201_900MHz.S(2,2) dB(TARF2201 Tachyonics
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9635 sige hbt Tx SiGe MMIC wideband linear amplifier TAHB09 1900MH
Abstract: Applicable Frequency 50~900MHz Insertion Loss 1 dB max./50~900MHz VSWR 2 max./50~900MHz Isolation 70dB min./50~900MHz 140 RF Selector Typical Connection with an RF Selector (Example 1 , . Specifications WWS1110-9003 NTSC 75 unbalance 50 ~900MHz 1dB max./50 ~900Hz 2 max./50 ~900MHz 70dB min./50 ~900MHz Applicable Broadcasting System 46 24 11.5 I/O Impedance 3.5 Applicable Frequency , 17 3.5 1.5 3 WWS2120-9003 PAL 75 unbalance 50 ~ 900MHz 1dB max./50 ~ 900Hz 2 max./50 ~ 900MHz SMK
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900Hz 50-900MH
Abstract: PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers , ,f=900MHz ·High Efficiency: 50%typ. 24.0+/-0.6 FEATURES 2 10.0+/-0.3 4-C2 1 , =17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=900MHz ,VDD=12.5V Pin=15W,Idq=2.0A VDD=15.2V,Po , Silicon MOSFET Power Transistor 900MHz,45W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT Mitsubishi
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100OHM A 107 transistor TRANSISTOR HANDLING 2A 800-900MH
Abstract: , lc=10mA Vce=10V. !c=10mA Vcb=10V, MMHz Ic=10mA, f=900MHz Ic=10mA, f=900MHz Ic=3mA, f=900MHz (dB) hFE , 0.70 200.00 Vce=10V, Ic=5mA Vce=10V, Ic=5mA Vcb=10V. f=lMHz Ic=10mA, f=900MHz le-lOmA,f=900MHz , w i i a w s t ' o 5.00 200.00 1.10 Ic=3mA, i=900MHz Vce=10V, Ic=20mA Vce=10V, Ic=20mA Vcb=10V. f=lMHz Ic=20mA, f=900MHz Ic=20mA, f=900MHz · 2 S C 3 7 7 8 w è : UHF f a t b i t s , 3 ¥ Vceo(V , jim » « fê fg » X h â ;u 0 4.50 200.00 Ic=5mA,f=900MHz Vce =10V, Ic=20mA Vce =10V, Ic -
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2sc377 2SC3778 2SC3776
Abstract: and production tested at 900MHz. Operation outside of this range is possible but not guaranteed. Note , Reverse Isolation: 49dB at 900MHz Dual Open-Collector Outputs (MAX2472) Adjustable -10dBm to -2dBm Output Power Control (MAX2473) High Input Impedance: >250 at 900MHz Ultra-Small SOT23-6 Package , ) SYMBOL fIN fIN = 600MHz Transducer Gain (IN to OUT2) fIN = 900MHz, TA = +25°C S212 fIN = 900MHz, TA = , Compression Point Reverse Isolation (IN to OUT2) S212 fIN = 900MHz fIN = 1900MHz fIN = 2400MHz POUT1dB fIN = Maxim Integrated Products
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10S21 AAAZ IC 5 PIN Inductor choke LQG11AZN2500 500MH 2500MH MAX2472/MAX2473
Abstract: figure and IP3 of -2 dB m at the input at 900MHz. The nominal current drawn from a single 3V supply is , systems from 800-1200MHz. The low-noise preamplifier has a 1.6dB noise figure at 900MHz with 11.5dB gain , , 4.4mA with the mixer powered-down · Outstanding LNA noise figure: 1.6dB at 900MHz · High system power gain: i7.5dB (LNA + Mixer) at 900MHz · Excellent gain stability versus temperature and supply voltage · , APP LICATIO NS · 900MHz cellular front-end (NADC. GSM, AMPS, TACS) · 900MHz cordless front-end (CT1 -
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2SA601 TlO31
Abstract: 900MHz. Designing the circuit: The circuit is designed to show the following performance (target): transistor: BFG425W V SUP=3V, ISUP~10mA freq=900MHz Power Gain: >12dB VSWRi , , Development 900MHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an , frequency f=900MHz. Performance at f=900MHz, T=250C: Power Gain >12dB, Noise Figure NF , Figure 1: Driver circuit 900MHz Driver Component list: Component: Value: R1 R2 C1 C2 C3 C4 us4 Philips Semiconductors
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RNR-T45-97-B-0686 BFG425W APPLICATION transistor bipolar driver schematic Z048 BFG400W
Abstract: production tested at 900MHz. Operation outside of this range is possible but not guaranteed. Note 3 , Range o 500MHz to 2500MHz Input Frequency Range o High Reverse Isolation: 49dB at 900MHz o Dual , Impedance: >250 at 900MHz o Ultra-Small SOT23-6 Package Ordering Information PART TEMP. RANGE , ) CONDITIONS fIN MIN 7.8 fIN = 900MHz, TA = TMIN to TMAX (Note 3) 6.6 fIN = 1900MHz 10.2 2 S122 fIN = 900MHz 9.2 fIN = 1900MHz 6.8 5.3 fIN = 900MHz -3.2 43 fIN = Maxim Integrated Products
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MAX2472EUT-T aaaz mark 34 dbm sot MAX2473EUT-T S21 SOT23
Abstract: 2.5GHz o Low Noise Figure: 9.3dB (900MHz, MAX2671) o +2.7V to +5.5V Single Supply o High Output , Packaging Pin Configurations TOP VIEW LO 1 Applications GND 2 400MHz/900MHz/2.4GHz ISM , Diagram appear at end of data sheet. Selector Guide PART ICC (mA) OUTPUT IP3 (dBm) at 900MHz , 45MHz, fLO = 445MHz, fRF = 400MHz Conversion Gain 7.0 fIF = 70MHz, fLO = 970MHz, fRF = 900MHz , Gain Variation Over Temperature ±1.2 TBD 2 fIF = 70MHz, fLO = 970MHz, fRF = 900MHz 5.7 Maxim Integrated Products
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WLAN ieee 802.11 MAX2660EUT-T MAX2660/MAX2661/MAX2663/MAX2671/MAX2673
Abstract: of 900MHz. Because this LNA has an extreme low power-consumption, it is well suited for pager , , Development 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W Abstract: This application note contains an , a frequency f=900MHz, VSUP~1.5V, ISUP~1mA. Measured performance at f=900MHz: Noise Figure NF~1.8dB, gain S21 ~16dB. Appendix I: 900MHz LNA circuit Appendix II: Printlayout and list of used components , performance: transistor: BFG403W Vce~0.9V, Ic ~1mA, VSUP~1.5V freq=900MHz Gain~16dB NF Philips Semiconductors
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0805CS 0805CS Series RNR-T45-97-B-006
Abstract: resistance () Functions Package IxL (mm) EMIF04-2005QCF 6.1 -35dB at 900MHz 45 R=200 Uni 4 lines filter +ESD EMIF04-1502QCF 6.1 -25dB at 900MHz 22 R=160 Uni 4 lines filter +ESD QFN 8 pins 2.00x2.00 EMIF04-1005M8 6.1 -38dB at 900MHz 52 R=100 Uni 4 lines filter +ESD uQFN-8L 1.7x1.5 EMIF04-1502M8 6.1 -25dB at 900MHz 14 R=170 Uni 4 lines filter +ESD uQFN-8L 1.7x1.5 EMIF04-VID01F2(2) 6.1 -33dB at 900MHz 25 STMicroelectronics
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EMIF06-VID01F2 EMIF06-1005M12 EMIF06-1502M12 HDMI2C1-5DIJ gsm signal Booster EMIF10-LCD02F3 gsm Booster gsm booster circuit HDMI2C1 SGIPAD1109 EMIF06-1005N12 QFN-12L
Abstract: [pF] Filter resistance [ ] Functions Package EMIF01-10005W5 6.1 -25 at 900MHz 50 R = 100 Uni 2 line filter + ESD SOT323-5L EMIF10-1K010F2 6.1 -25 at 900MHz , at 900MHz 60 R = 100 Uni 4 line filter + ESD Flip-Chip 2.92 x 1.29 EMIF06-10006F2 6.1 -38 at 900MHz 60 R = 100 Uni 8 line filter + ESD Flip-Chip 2.92 x 1.29 EMIF11-10002C4 6.1 -33 at 900MHz 50 R = 100 Uni 11 line filter + ESD QFN 4.00 x 4.00 Filter STMicroelectronics
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EMIF06-HMC01F2 emi line filter sot-883 usb emi filter EMIF08-1502M16 EMIF08-VID01F2 SGIPAD0908 QSOP28 KBMF01SC6 CPL-WB-00C2 BAL-2593D5U
Abstract: Reverse Isolation: 49dB at 900MHz Dual Open-Collector Outputs (MAX2472) Adjustable -10dBm to -2dBm Output Power Control (MAX2473) High Input Impedance: >250 at 900MHz Ultra-Small SOT23-6 Package , ) SYMBOL fIN fIN = 600MHz Transducer Gain (IN to OUT2) fIN = 900MHz, TA = +25°C S212 fIN = 900MHz, TA = , Compression Point Reverse Isolation (IN to OUT2) S212 fIN = 900MHz fIN = 1900MHz fIN = 2400MHz POUT1dB fIN = 900MHz fIN = 600MHz S122 fIN = 900MHz fIN = 1900MHz fIN = 2400MHz 7.8 6.6 7.5 6.0 13.0 9.2 6.8 5.3 -3.2 -
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AC4490 AC4490LR-1000M BTM511 BHCRS02BI ACC-004 BTM410 PRM111 BTM411 LT2510 AC4490-1000M AC4490-1000M-485 RS485 SDK-AC4490-1000M
Abstract: -30 -35 -35 -35 -35 -20 -20 -25 -25 -30 -30 -35 -35 850MHz 850MHz 900MHz 850MHz 850MHz 900MHz 900MHz 900MHz 1800MHz 1800MHz 1800MHz 1900MHz 1900MHz 1900MHz 1900MHz , -25 -30 -30 -30 -30 850MHz850MHz 850MHz 900MHz900MHz 900MHz 850MHz 1800MHz 1800MH 1800MHz 1900MHz 1900MH 1900MHz 900MHz 1800MHz 2100MHz 2100MH 2100MHz 1900MHz 2100MHz , 900MHz 900MHz 900MHz 900MHz 1800MHz 1800MHz 1800MHz 1800MHz 1900MHz 1900MHz 1900MHz 1900MHz Philips Semiconductors
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Abstract: 900 MHz " 0.2 GHz ISL RLn R Lout Po(sat) Vcc = 1.8 V, f = 900MHz Vcc = 1.8 V, f = 900MHz 34 11 13 -13.7 -34 -20 34 10 12 -10.0 -38 -28 dB dB dB dBm Vcc = 1.8 V , f = 900MHz Vcc = 1.8 V, f = 900MHz, Pin = -8 dBm IMa Vcc = 3.0 V, Pout = -20 dBm, f1 = 900 MHz, f2 = 902 MHz Vcc Taoglas
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2200MH SPE-11-8-032/F/SS PSP-12-8-00
Abstract: preamplifier has a 2dB noise figure at 900MHz with 16dB gain and an IM3 intercept of -10dBm at the input , figure and IM3 intercept of +6dBm at the input at 900MHz. Mixer input impedance is 50 with an , and 14dB for the mixer at 900MHz 7 8 ENABLE VCCMX APPLICATIONS · 900MHz front end , · Spread spectrum receivers · 900MHz cordless phones ORDERING INFORMATION DESCRIPTION , enabled S21/T 900MHz Enable = LO, 900MHz dB dB 900MHz -0.008 dB/°C Enable = LO -
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BLT80 BLT81 BFG540 trw RF POWER TRANSISTOR trw rf transistor bfg540 s-parameter BFG540/
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