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900/800V

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor 1W 100MHz SI-N 80V 2A 1W 0.2us SI-N 1500/900V 0.1A 10W SI-N 900V 3A 80W SI-N 900/800V 5A 100W SI-N 900/800V 7A 120W 6MHz SI-N+D 1500V 10A 150W SI-N 1500V 10A 150W 0.2us SI-N 100V 7A 30W , 900/800V 1A 30W 300 SI-N 230V 15A 150W 30MHz SI-N , 0.25W 200MHz 100V 3A 30W B=700 80V 6A 40W 10MHz 300V 2A 40W 10MHz 30V 0.05A 0.25W 1500/800V 5A 50W , 27MHz 40V 3.5A PQ>15W 175MHz 50V 15A PQ=85W 30V 0.8A 0.6W 120MHz 800V 10A 50W 75V 4A 12.5W RFPOWER
-
Original
TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 2N109 2N1304 2N1305 2N1307 2N1613 2N1711

BTA12 600V

Abstract: scr 600v 12a TO-220 700 700 700 800 850 850 900 900 950 800 800 VCES /VCES(V) 0.6 0.75 1 1.5 1.5 1.5 2 , resistance 5.5 900 IPAK / TO-220 / FP I2PAK 6 9 1 1.2 1.2 1.25 1.2 2 2.2 2.2 2.2 , 600 600 600 600 600 600 600 600 600 600 600 600 600 600 800 900 900 500 500 TO , 5mA Std TRIAC 8A 800V 50mA Snubberles TRIAC 8A 800V 50mA Std TRIAC 8A 800V 25mA Snuberless TRIAC 8A 800V 25mA Snubberles TRIAC 8A 800V 10mA Snuberless TRIAC 8A 800V 5mA Std TRIAC 10A 600V 50mA
STMicroelectronics
Original
BTA12 600V scr 600v 12a TO-220 triac 600v. 1a. to 92 diac 30v triac 1200V triac 10A STBV68 STBV45 STBV42 STBV32 STX13003 ST13003

smd code marking 4A

Abstract: IDB04E120 . Dynamic Characteristics Reverse recovery time ns trr VR =800V, IF =4A, diF /dt=750A/µs, Tj =25°C - 115 - VR =800V, IF =4A, diF /dt=750A/µs, Tj =125°C - 180 - VR =800V, IF =4A, diF /dt=750A/µs, Tj =150°C - 185 - Peak reverse current A Irrm VR =800V, IF = 4 A, diF/dt=750A/µs, Tj =25°C - 7.15 - VR =800V, IF =4A, diF /dt=750A/µs, Tj =125°C - 8 - VR =800V, IF =4A, diF /dt=750A/µs, Tj =150°C - 8.1 - Reverse recovery charge nC
Infineon Technologies
Original
IDP04E120 IDB04E120 Q67040-S4388 smd code marking 4A P-TO220-3 P-TO220-2-2 D04E120

d09e120

Abstract: IDB09E120 . Dynamic Characteristics Reverse recovery time ns trr VR =800V, IF =9A, diF /dt=750A/µs, Tj =25°C - 140 - VR =800V, IF =9A, diF /dt=750A/µs, Tj =125°C - 200 - VR =800V, IF =9A, diF /dt=750A/µs, Tj =150°C - 210 - Peak reverse current A Irrm VR =800V, IF = 9 A, diF/dt=750A/µs, Tj =25°C - 13.3 - VR =800V, IF =9A, diF /dt=750A/µs, Tj =125°C - 16.1 - VR =800V, IF =9A, diF /dt=750A/µs, Tj =150°C - 16.5 - Reverse recovery charge
Infineon Technologies
Original
IDP09E120 IDB09E120 d09e120 P-TO220SMD Q67040-S4479 D09E120 Q67040-S4384

D30E120

Abstract: IDP30E120 125°C parameter: VR = 800V, Tj = 125 °C 1100 6500 ns nC 60A 900 5500 trr , . Dynamic Characteristics Reverse recovery time ns trr VR =800V, IF =30A, diF /dt=850A/µs, Tj=25°C - 243 - VR =800V, IF =30A, diF /dt=850A/µs, Tj=125°C - 355 - VR =800V, IF =30A, diF /dt=850A/µs, Tj=150°C - 380 - Peak reverse current A Irrm VR =800V, IF = 30 A, diF /dt=850A/µs, Tj =25°C - 23.7 - VR =800V, IF =30A, diF/dt=850A/µs, Tj =125°C -
Infineon Technologies
Original
IDP30E120 IDB30E120 D30E120 Q67040-S4390 Q67040-S4383

smd code marking 4A

Abstract: D04E120 rr V R=800V, IF=4A, di F/dt=750A/µs, Tj=25°C - 115 - V R=800V, IF=4A, di F/dt=750A/µs, Tj=125°C - 180 - V R=800V, IF=4A, di F/dt=750A/µs, Tj=150°C - 185 - Peak reverse current A I rrm V R=800V, IF = 4 A, diF/dt=750A/µs, Tj=25°C - 7.15 - V R=800V, IF =4A, diF /dt=750A/µs, T j=125°C - 8 - V R=800V, IF =4A, diF /dt=750A/µs, T j=150°C - 8.1 - Reverse recovery charge nC Q rr V R=800V, IF=4A, di F/dt=750A/µs, Tj
Infineon Technologies
Original
Q67040-S4386

d09e120

Abstract: IDB09E120 rr V R=800V, IF=9A, di F/dt=750A/µs, Tj=25°C - 140 - V R=800V, IF=9A, di F/dt=750A/µs, Tj=125°C - 200 - V R=800V, IF=9A, di F/dt=750A/µs, Tj=150°C - 210 - Peak reverse current A I rrm V R=800V, IF = 9 A, diF/dt=750A/µs, Tj=25°C - 13.3 - V R=800V, IF =9A, diF /dt=750A/µs, T j=125°C - 16.1 - V R=800V, IF =9A, diF /dt=750A/µs, T j=150°C - 16.5 - Reverse recovery charge nC Q rr V R=800V, IF=9A, di F/dt=750A/µs, Tj
Infineon Technologies
Original

D30E120

Abstract: IDP30E120 , T j = 125°C parameter: VR = 800V, Tj = 125 °C 1100 6500 ns nC 900 60A 5500 , ns t rr V R=800V, IF=30A, diF/dt=850A/µs, Tj =25°C - 243 - V R=800V, IF=30A, diF/dt=850A/µs, Tj =125°C - 355 - V R=800V, IF=30A, diF/dt=850A/µs, Tj =150°C - 380 - Peak reverse current A I rrm V R=800V, IF = 30 A, di F/dt=850A/µs, T j=25°C - 23.7 - V R=800V, IF =30A, diF/dt=850A/µs, Tj=125°C - 28.3 - V R=800V, IF =30A, diF/dt=850A/µs
Infineon Technologies
Original

smd code marking 4A

Abstract: °C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time V R=800V, IF=4A, di F/dt=750A/µs, Tj=25°C V R=800V, IF=4A, di F/dt=750A/µs, Tj=125°C V R=800V, IF=4A, di F/dt=750A/µs , 330 575 630 6 7.8 7.8 A nC - Peak reverse current V R=800V, IF = 4 A, diF/dt=750A/µs, Tj=25°C V R=800V, IF =4A, diF /dt=750A/µs, T j=125°C V R=800V, IF =4A, diF /dt=750A/µs, T j=150°C Reverse recovery charge V R=800V, IF=4A, di F/dt=750A/µs, Tj=25°C V R=800V, IF =4A, diF /dt=750A/µs, T j=125°C V R=800V
Infineon Technologies
Original

2A109

Abstract: IDP04E120 ) parameter: V R = 800V, T j = 125°C parameter: VR = 800V, Tj = 125 °C 500 900 ns nC 400 , Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R=800V, IF=4A, di F/dt=750A/µs, Tj=25°C - 115 - V R=800V, IF=4A, di F/dt=750A/µs, Tj=125°C - 180 - V R=800V, IF=4A, di F/dt=750A/µs, Tj=150°C - 185 - Peak reverse current A I rrm V R=800V, IF = 4 A, diF/dt=750A/µs, Tj=25°C - 7.15 - V R=800V, IF =4A, diF /dt
Infineon Technologies
Original
2A109 smd diode UM 2a PG-TO220-2-2

D30E120

Abstract: Qrr =f(diF/dt) parameter: VR = 800V, Tj = 125 °C 6500 ns 900 800 nC 60A 5500 60A 30A , 25 °C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time V R=800V, IF=30A, diF/dt=850A/µs, Tj =25°C V R=800V, IF=30A, diF/dt=850A/µs, Tj =125°C V R=800V, IF=30A, diF/dt , 28.3 29.5 2630 4700 5200 6 7.4 7.5 A nC - Peak reverse current V R=800V, IF = 30 A, di F/dt=850A/µs, T j=25°C V R=800V, IF =30A, diF/dt=850A/µs, Tj=125°C V R=800V, IF =30A, diF/dt=850A/µs, Tj
Infineon Technologies
Original
Abstract: Parameter Dynamic Characteristics Reverse recovery time V R=800V, IF=30A, diF/dt=850A/µs, Tj =25°C V R=800V, IF=30A, diF/dt=850A/µs, Tj =125°C V R=800V, IF=30A, diF/dt=850A/µs, Tj =150°C Symbol min. t rr I , nC - Peak reverse current V R=800V, IF = 30 A, di F/dt=850A/µs, T j=25°C V R=800V, IF =30A, diF/dt=850A/µs, Tj=125°C V R=800V, IF =30A, diF/dt=850A/µs, Tj=150°C Reverse recovery charge V R=800V, IF=30A, diF/dt=850A/µs, Tj =25°C V R=800V, IF =30A, diF/dt=850A/µs, Tj=125°C V R=800V, IF =30A, diF Infineon Technologies
Original

D09E120

Abstract: s18a 25 °C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time V R=800V, IF=9A, di F/dt=750A/µs, Tj=25°C V R=800V, IF=9A, di F/dt=750A/µs, Tj=125°C V R=800V, IF=9A, di F/dt , 16.1 16.5 950 1470 1600 5.4 6.5 6.6 A nC - Peak reverse current V R=800V, IF = 9 A, diF/dt=750A/µs, Tj=25°C V R=800V, IF =9A, diF /dt=750A/µs, T j=125°C V R=800V, IF =9A, diF /dt=750A/µs, T j=150°C Reverse recovery charge V R=800V, IF=9A, di F/dt=750A/µs, Tj=25°C V R=800V, IF =9A, diF /dt=750A/µs, T j
Infineon Technologies
Original
s18a

D30E120

Abstract: W138 Qrr =f(diF/dt) parameter: VR = 800V, Tj = 125 °C 6500 ns 900 800 nC 60A 5500 60A 30A , 25 °C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time V R=800V, IF=30A, diF/dt=850A/µs, Tj =25°C V R=800V, IF=30A, diF/dt=850A/µs, Tj =125°C V R=800V, IF=30A, diF/dt , 28.3 29.5 2630 4700 5200 6 7.4 7.5 A nC - Peak reverse current V R=800V, IF = 30 A, di F/dt=850A/µs, T j=25°C V R=800V, IF =30A, diF/dt=850A/µs, Tj=125°C V R=800V, IF =30A, diF/dt=850A/µs, Tj
Infineon Technologies
Original
W138
Abstract: 25 °C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time V R=800V, IF=9A, di F/dt=750A/µs, Tj=25°C V R=800V, IF=9A, di F/dt=750A/µs, Tj=125°C V R=800V, IF=9A, di F/dt , 16.1 16.5 950 1470 1600 5.4 6.5 6.6 A nC - Peak reverse current V R=800V, IF = 9 A, diF/dt=750A/µs, Tj=25°C V R=800V, IF =9A, diF /dt=750A/µs, T j=125°C V R=800V, IF =9A, diF /dt=750A/µs, T j=150°C Reverse recovery charge V R=800V, IF=9A, di F/dt=750A/µs, Tj=25°C V R=800V, IF =9A, diF /dt=750A/µs, T j Infineon Technologies
Original
Abstract: 25 °C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time V R=800V, IF=4A, di F/dt=750A/µs, Tj=25°C V R=800V, IF=4A, di F/dt=750A/µs, Tj=125°C V R=800V, IF=4A, di F/dt , 8.1 330 575 630 6 7.8 7.8 A nC - Peak reverse current V R=800V, IF = 4 A, diF/dt=750A/µs, Tj=25°C V R=800V, IF =4A, diF /dt=750A/µs, T j=125°C V R=800V, IF =4A, diF /dt=750A/µs, T j=150°C Reverse recovery charge V R=800V, IF=4A, di F/dt=750A/µs, Tj=25°C V R=800V, IF =4A, diF /dt=750A/µs, T j=125°C V R=800V Infineon Technologies
Original
Abstract: Dynamic Characteristics Reverse recovery time V R=800V, IF=9A, di F/dt=750A/µs, Tj=25°C V R=800V, IF=9A, di F/dt=750A/µs, Tj=125°C V R=800V, IF=9A, di F/dt=750A/µs, Tj=150°C Symbol min. t rr I rrm Q rr S , Peak reverse current V R=800V, IF = 9 A, diF/dt=750A/µs, Tj=25°C V R=800V, IF =9A, diF /dt=750A/µs, T j=125°C V R=800V, IF =9A, diF /dt=750A/µs, T j=150°C Reverse recovery charge V R=800V, IF=9A, di F/dt=750A/µs, Tj=25°C V R=800V, IF =9A, diF /dt=750A/µs, T j=125°C V R=800V, IF =9A, diF /dt=750A/µs Infineon Technologies
Original
Abstract: charge Qrr =f(diF/dt) parameter: VR = 800V, Tj = 125 °C 900 ns 400 350 nC 800 8A 300 250 , Dynamic Characteristics Reverse recovery time V R=800V, IF=4A, di F/dt=750A/µs, Tj=25°C V R=800V, IF=4A, di F/dt=750A/µs, Tj=125°C V R=800V, IF=4A, di F/dt=750A/µs, Tj=150°C Symbol min. t rr I rrm Q rr S , reverse current V R=800V, IF = 4 A, diF/dt=750A/µs, Tj=25°C V R=800V, IF =4A, diF /dt=750A/µs, T j=125°C V R=800V, IF =4A, diF /dt=750A/µs, T j=150°C Reverse recovery charge V R=800V, IF=4A, di F/dt Infineon Technologies
Original

D12E120

Abstract: IDB12E120 . Dynamic Characteristics Reverse recovery time ns trr VR =800V, IF =12A, diF /dt=800A/µs, Tj=25°C - 150 - VR =800V, IF =12A, diF /dt=800A/µs, Tj=125°C - 215 - VR =800V, IF =12A, diF /dt=800A/µs, Tj=150°C - 225 - Peak reverse current A Irrm VR =800V, IF = 12 A, diF /dt=800A/µs, Tj =25°C - 17 - VR =800V, IF =12A, diF/dt=800A/µs, Tj =125°C - 20.9 - VR =800V, IF =12A, diF/dt=800A/µs, Tj =150°C - 21.5 - Reverse recovery charge nC
Infineon Technologies
Original
IDP12E120 IDB12E120 Q67040-S4389 D12E120 Q67040-S4385 150-TC3

D18E120

Abstract: IDP18E120 ns t rr V R=800V, IF=18A, diF/dt=800A/µs, Tj =25°C - 195 - V R=800V, IF=18A, diF/dt=800A/µs, Tj =125°C - 280 - V R=800V, IF=18A, diF/dt=800A/µs, Tj =150°C - 300 - Peak reverse current A I rrm V R=800V, IF = 18 A, di F/dt=800A/µs, T j=25°C - 20.2 - V R=800V, IF =18A, diF/dt=800A/µs, Tj=125°C - 24.4 - V R=800V, IF =18A, diF/dt=800A/µs, Tj=150°C - 25.3 - Reverse recovery charge nC Q rr V R=800V, IF=18A, diF/dt
Infineon Technologies
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IDP18E120 IDB18E120 D18E120 diode MARKING CODE 18A smd diode 36A 18a smd marking Q67040-S4493 Q67040-S4387
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