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DX8773-ELG2A01-A4 Integrated Device Technology Inc FCBGA-896, Tray visit Integrated Device Technology
DX0793-ELG2B01-A4 Integrated Device Technology Inc FCBGA-896, Tray visit Integrated Device Technology
DX0783-ULG2B01-A4 Integrated Device Technology Inc FCBGA-896, Tray visit Integrated Device Technology
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DX9773-DLG2A01-A4 Integrated Device Technology Inc FCBGA-896, Tray visit Integrated Device Technology

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896-941MH

Catalog Datasheet MFG & Type PDF Document Tags

RA45H8994M1-101

Abstract: G marking MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to , % @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW · Broadband Frequency Range: 896-941MHz · Metal cap structure that , ) Tstg f=896-941MHz, 60 °C -40 to +110 Storage Temperature Range W -30 to +100
Mitsubishi
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RA45H8994M1-101 G marking POUT18 lta 601 896-941MH 941-MH
Abstract: RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp , % @ VDD=12.5V, VGG=5V, Pin=50mW out Broadband Frequency Range: 896-941MHz Low-Power Control Current , RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO MAXIMUM RATINGS (Tcase , Storage Temperature Range -40 to +110 ° C Tcase(OP) Tstg f=896-941MHz, ZG=ZL=50 The , > RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE Mitsubishi
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RA20H8994M-101

M67760HC

Abstract: f941m MITSUBISHI RF POWER MODULE M67760HC 896-941MHz, 12.5V, 20W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±1 2 3 4 60±1 6±0.2 52±1 1 R1.5 2 5 R2±0.2 1 2 3 4 5 6 6 0.5 ±0.15 4±0.2 4.5±1 16.5±1 10.5±1 12±1 PIN: 1 , Conditions VBB=9V ZG=ZL=50, VBB=9V ZG=ZL=50, VCC112.5V f=896-941MHz, ZG=ZL=50 ZG=ZL=50 ZG=ZL , POWER MODULE M67760HC 896-941MHz, 12.5V, 20W, FM MOBILE RADIO TYPICAL PERFORMANCE DATA OUTPUT
Mitsubishi
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f941m 896MH 941MH
Abstract: < Silicon RF Power Modules > RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp , PACKAGE CODE: H2M â'¢ Broadband Frequency Range: 896-941MHz â'¢ Metal cap structure that makes the , , 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO MAXIMUM RATINGS (Tcase=+25°C, Z G=ZL=50, unless , Tcase(OP) Tstg f=896-941MHz, Operation Case Temperature Range VGG1=3.4V ± 7%, VGG2 , > RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE Mitsubishi
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transistor zg

Abstract: ZG 300 DC MITSUBISHI RF POWER MODULE M67760HC 896-941MHz, 12.5V, 20W, FM MOBILE RADIO Dimensions in mm , Conditions VBB=9V ZG=ZL=50, VBB=9V ZG=ZL=50, VCC112.5V f=896-941MHz, ZG=ZL=50 ZG=ZL=50 ZG=ZL , POWER MODULE M67760HC 896-941MHz, 12.5V, 20W, FM MOBILE RADIO TYPICAL PERFORMANCE DATA OUTPUT
Mitsubishi
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M67760LC transistor zg ZG 300 DC transistor 10 zg M67760H F8068 806-870MH

M68745H

Abstract: MITSUBISHI RF POWER MODULE M68745H SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 45 2 3 42 2-R1.5 1 , temperature Conditions ZG=ZL=50 f=896-941MHz, ZG=ZL=50 f=896-941MHz, ZG=ZL=50 f=896-941MHz, ZG=ZL , SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT , , 896-941MHz, 3.8W, FM PORTABLE RADIO OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 14 70 f
Mitsubishi
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40T7

Abstract: M68757H MITSUBISHI RF POWER MODULE M68757H SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 30±0.2 2 26.6±0.2 21.2±0.2 3 , temperature Conditions VGG3.5V, ZG=ZL=50 f=896-941MHz, ZG=ZL=50 f=896-941MHz, ZG=ZL=50 f=896-941MHz , , 896-941MHz, 3W FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY 6 , SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO OUTPUT POWER, TOTAL EFFICIENCY VS
Mitsubishi
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40T7

dd128v

Abstract: RA45H8994M1-101 < Silicon RF Power Modules > RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp , % @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW PACKAGE CODE: H2M · Broadband Frequency Range: 896-941MHz · Metal , > RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO MAXIMUM RATINGS (Tcase , , > RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE (Tcase
Mitsubishi
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dd128v

RA45H8994M1

Abstract: RA45H8994M1-101 MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to , % @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW · Broadband Frequency Range: 896-941MHz · Metal cap structure that , Power Pout Output Power Tcase(OP) Tstg f=896-941MHz, VGG1=3.4V ± 7%, VGG2
Mitsubishi
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I-20041

RA20H8994M

Abstract: , T>25% @ VDD=12.5V, VGG=5V, Pin=50mW · Broadband Frequency Range: 896-941MHz · Low-Power Control , .Lead in electronic Ceramic parts. 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM 2 , Power Modules > RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO , Temperature Range f=896-941MHz, ZG=ZL=50 CONDITIONS VGG , > RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE
Mitsubishi
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RA45H8994M1

Abstract: RA45H8994M1-101 MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to , % @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW · Broadband Frequency Range: 896-941MHz · Metal cap structure that , Power Pout Output Power Tcase(OP) Tstg f=896-941MHz, VGG1=3.4V ± 7%, VGG2
Mitsubishi
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D3060

RA45H8994M1

Abstract: RA45H8994M1-101 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to , % @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW · Broadband Frequency Range: 896-941MHz · Metal cap structure that , f=896-941MHz, Operation Case Temperature Range 60 °C -40 to +110 Storage Temperature
Mitsubishi
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RA20H8994M-101

Abstract: transistor BC 945 MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to , Pout>20W, T>25% @ VDD=12.5V, VGG=5V, Pin=50mW · Broadband Frequency Range: 896-941MHz · Low-Power , Storage Temperature Range -40 to +110 °C TYP UNIT f=896-941MHz, ZG=ZL=50 The above
Mitsubishi
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transistor BC 945 1000v 200w Transistor

RA20H8994M

Abstract: 2 x 20w amplifier Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to , Pout>20W, T>25% @ VDD=12.5V, VGG=5V, Pin=50mW · Broadband Frequency Range: 896-941MHz · Low-Power , 6 mW 40 f=896-941MHz, ZG=ZL=50 V 100 W Operation Case Temperature Range -30
Mitsubishi
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2 x 20w amplifier

RA20H8994M

Abstract: RA20H8994M-101 MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to , Pout>20W, T>25% @ VDD=12.5V, VGG=5V, Pin=50mW · Broadband Frequency Range: 896-941MHz · Low-Power , V 6 mW 40 f=896-941MHz, ZG=ZL=50 V 100 W Operation Case Temperature Range
Mitsubishi
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mitsubishi rf RF MOSFET MODULE