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SN74LS684NSRE4 Texas Instruments LS SERIES, 8-BIT MAGNITUDE COMPARATOR, INVERTED OUTPUT, PDSO20, GREEN, PLASTIC, SOP-20 visit Texas Instruments
SN74LS684NSRG4 Texas Instruments LS SERIES, 8-BIT MAGNITUDE COMPARATOR, INVERTED OUTPUT, PDSO20, GREEN, PLASTIC, SOP-20 visit Texas Instruments
SN74ACT1284NSR Texas Instruments 7-Bit Bus Interfaces With 3-State Outputs 20-SO 0 to 70 visit Texas Instruments
SN74ACT1284NSRE4 Texas Instruments QUAD LINE TRANSCEIVER, PDSO20, GREEN, PLASTIC, SOP-20 visit Texas Instruments
SN74LS684NSR Texas Instruments 8-Bit Identity/Magnitude Comparators 20-SO 0 to 70 visit Texas Instruments Buy
SN74ACT1284NSRG4 Texas Instruments 7-Bit Bus Interfaces With 3-State Outputs 20-SO 0 to 70 visit Texas Instruments

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84nS Datasheet

Part Manufacturer Description PDF Type
8-4NS JST Manufacturing Ring Tongue Terminal: 8: 21.8: 8 Original

84nS

Catalog Datasheet MFG & Type PDF Document Tags

M5M465805ATP

Abstract: 4mx16 edo 50ns 13ns 25ns 13ns 28ns 8ns Ons 8ns Ons 30ns 64ms 64ms Test Condition Vcc=3.6V.Tc=84ns.Ta=25°C Vcc , =3.6V.ThDC=20ns.Ta=25°C V cc=3.6V.T c=84ns .Ta=25 °C Vcc=3.0V.Ta=80°C ditto ditto ditto ditto ditto Vcc=3.6V.Ta=25°C Vcc , 403.8uA 86.3mA 115.8mA 42.7ns 8.4ns 18.0ns 6.9ns 20.4ns 5.1ns -4.1ns 3.0ns -2.1ns 16.0ns 318.6ms 312.2ms , lOOOuA 120mA 140mA 50ns 13ns 25ns 13ns 28ns 8ns Ons 8ns Ons 30ns 64ms 64ms Test Condition Vcc=3.6V.Tc=84ns , =3.6V,Thpc=20ns,T a=25°C Vcc=3.6V,Tc=84ns ,Ta=25 °C Vcc=3.0V.Ta=80°C ditto ditto ditto ditto Vcc
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OCR Scan
M5M465400ATP M5M465805ATP 4mx16 edo L-21011-01 64MDRAM M5M467400AJ M5M467400ATP M5M467800AJ M5M467800ATP

74F04

Abstract: DS1045 standard DS1045 family of 84ns. The standard DS1045 product line provides the user with three devices , DS1045 4-Bit Dual Programmable Delay Line www.maxim-ic.com FEATURES All-silicon time delay Two programmable outputs from a single input produce output-to-output delays between 9ns and 84ns , minimum of 9ns and a maximum of 84ns Output pulse is a reproduction of input pulse after Delay with , 69ns ±3.3ns DS1045-5 9 ±=1ns 84ns ±4.1ns NOTE: Additional delay step times are
Dallas Semiconductor
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DS1045S 74F04 DS1045-3 DS1045-4 J-STD-020A

4mx16 edo

Abstract: M5M465165 ns 0 ns 8 ns 0 ns 8 ns 30 ns 20 ns 64 ms 64 ms 90 mA Vcc=3.6V, Tc=84ns, Ta=25°C 500 uA 1000 uA , mA Vcc=3.6V, Thpc=20ns, Ta=25°C 120 mA Vcc=3.6V, Tc=84ns, Ta=25°C 400 uA 60 ns 15 ns 30 ns 15 ns 33 , 50ns Spec. 60ns Test Condition 130 mA Vcc=3.6V, Tc=84ns, Ta=25°C 115.5 mA 26.9 uA 28.6 uA , =20ns, Ta=25°C 130 mA Vcc=3.6V, Tc=84ns, Ta=25°C 400 uA 60 ns 15 ns 30 ns 15 ns 33 ns 0 ns 10 ns 0 ns 10 ns
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OCR Scan
M5M465165 ta 9812 L-21038-01 L-21039-0B M5M467400BJ M5M467400BTP M5M467800BJ M5M467800BTP

gaussian shaping filter

Abstract: gaussian filter Norminal delay time 675ns 338ns 225ns 169ns 137ns 113ns 96ns 84ns 75ns 67ns 29ns 675ns 338ns 225ns 169ns 137ns 113ns 96ns 84ns 75ns 67ns 29ns Source & Load Impedance 75Q 75Q 75Q 75Q 75D 75Q 75Q 75Q 75Q 75Í2
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OCR Scan
FSL-105C75 gaussian shaping filter gaussian filter 120MHz 10MHz filter 4.0MHz FSL-504C75 FSL-155C75 FSL-205C75 FSL-255C75 FSL-305C75

samsung gddr5

Abstract: k4w2g1646 166MHz 7.6ns 13ns 5.8ns 9.0ns CL-1 200MHz 300MHz 3.8ns 8.4ns 3.8ns 6.4ns , CL K4N51163QE-ZC 100MHz 166MHz 5.3ns 8.4ns 5.3ns 6.4ns CL How to extract
Samsung Electronics
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K4J10324KE-HC K4W1G1646D-EC K4N1G164QQ-HC K4J52324QE-BC K4J52324KI-HC K4W2G1646B-HC samsung gddr5 k4w2g1646 GDDR5 K4J52324K K4J52324KI GDDR5 application note samsung 166MH 100MH 250MH 200MH 300MH

k4w2g1646

Abstract: GDDR 300MHz 3.8ns 8.4ns 3.8ns 6.4ns CL-1 K4J52324QE-BC 220MHz 252MHz 4.6ns 8.3ns , K4N51163QE-ZC 100MHz 166MHz 5.3ns 8.4ns 5.3ns 6.4ns CL GDDR3 K4J55323QI-BC 200MHz
Samsung Electronics
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GDDR K4J52324Q 54NS k4j10324qd-hc K4J55323 K4W1G1646E 350MH K4J10324QD-HC K4W1G1646E-HC K4N1G164QE-HC 100MHZ K4J52324QH-HC

Dram 168 pin EDO buffered

Abstract: DTM60093 DTM60093 128MB-16M x 72, 168-Pin Buffered EDO DIMM Identification Part number: DTM60093 Performance range Speed TRAC TCAC TRC THPC RAC CAC -5 50ns 18ns 84ns 20ns Features Description Extended Data-Out mode operation The Dataram DTM60093 is a 16M x 72 bit Dynamic RAM high-density memory module. The DTM60093 consists of eighteen CMOS 16M x 4 bit DRAMs in TSOP-II 400 mil packages and two 16 bit driver ICs in TSSOP package mounted on a 168-pin glass epoxy substrate. A 0.22uf
Dataram
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Dram 168 pin EDO buffered 168-P

DTM60092

Abstract: DTM60092 64MB-8M x 72, 168-Pin Buffered EDO DIMM Identification Part number: DTM60092 Performance range Speed TRAC TCAC TRC THPC RAC CAC 50ns 50ns 18ns 84ns 20ns Features Description Extended Data-Out mode operation The Dataram DTM60092 is an 8M x 72 bit Dynamic RAM high-density module. The DTM60092 consists of nine CMOS 8 M x 8 bit DRAMs in TSOP-II 400 mil packages and two 16 bit driver ICs in TSSOP package mounted on a 168pin glass epoxy substrate. A 0.1uf decoupling
Dataram
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KVR8X72V84-50EG

Abstract: ) 50ns 50ns 25ns 84ns 20ns 50ns (min.) 10,000ns (max.) +3.3V (+/- 0.3V) 4.110 W (operating) 31.5
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KVR8X72V84-50EG VALUERAM0101-001

DS1003

Abstract: DS1055 SILICON TIMED CIRCUITS DELAY LINES (HYBRID REPLACEMENTS) Multiple-Tap Delays # Taps 5 Part # DS1000 DS1004 Packages DIP, Gull, SO, Clip DIP, Gull, SO DIP, Gull, SO, Clip DIP, Gull, SO Packages DIP, Gull, SO DIP, SO TSSOP DIP, SO TSSOP DIP,Gull, SO DIP,Gull, SO Features 4-tap delay for RISC processors ±0.75ns tap-to-tap tolerance 8-bit programmable 0.15 to 2ns steps 3 to 50ns delays On-chip logic, can be used as frequency doubler 4-bit programmable 9 to 84ns delays Features 4 to 500ns deUys Pin-compatible
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DS1003 DS1055 DS1005 DS1010 DS1013 DS1033 DS1035 DS1044

KVR16X72V84-50EG

Abstract: TSOP ) 50ns 50ns 25ns 84ns 20ns 50ns (min.) 10,000ns (max.) +3.3V (+/- 0.3V) 4.485 W (operating) 59.5
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KVR16X72V84-50EG TSOP 128MB VLAUERAM0099-001

Dataram

Abstract: Dram 168 pin EDO buffered DTM60094 256MB-32M x 72, 168-Pin Buffered EDO DIMM Identification Part number: DTM60094 Performance range Speed TRAC TCAC TRC THPC RAC CAC -5 50ns 18ns 84ns 20ns Features Description Extended Data-Out mode operation The Dataram DTM60094 is a 32M x 72 bit Dynamic RAM high-density memory module. The DTM60094 consists of thirty-six CMOS 16M x 4 bit DRAMs in TSOP-II 400 mil packages and two 16 bit driver ICs in TSSOP package mounted on a 168-pin glass epoxy substrate. A 0.1uf
Dataram
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Dataram

JDP2S05SC

Abstract: JDP2S08SC ) @Vcc=3.0V3.6V Tpd=8.4ns(Max) @Vcc=1.65V1.95V IOH/IOL=±24mA @Vcc=3.0V IOH/IOL=±6mA @Vcc=1.65V -4085
Toshiba
Original
JDP2S05SC JDP2S08SC TC74VCX245FTG VQON16 TLP3914 TC74VCX2541FTG TC74VCX541FTG TC74VCXR2245FTG IBM300 VQON20

72-Pin SO-DIMM

Abstract: SO-DIMM SL32D6C4M4E-AxxV 4M X 32 Bits DRAM SO-DIMM with Extended Data Out (EDO) FEATURES GENERAL DESCRIPTION · The SiliconTech SL32D6C4M4E-AxxV is a 4Mx 32 bits Dynamic RAM (DRAM) Small Outline-Dual Inline Memory Module (SODIMM). This module consists of two CMOS 4M x 16 bits DRAMs in 50-pin TSOP-II 400-mil packages mounted on a 72-pin glass epoxy substrate. Decoupling capacitors of 0.1uF are mounted for the DRAMs. tCAC tRC tHPC SL.-A50V 50ns 17ns 84ns 20ns SL.-A60V · · · · ·
SiliconTech
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SL32D6C4M4E-A50V SL32D6C4M4E-A60V 72-Pin SO-DIMM SO-DIMM SL32D6C4M4E-A DQ0-DQ31

IBM025161LG5D60

Abstract: gm72v16821 514175BJ/BJL50/-60 EDO (Hyper Page Mode) 4M 256kxl6 Min. R/W Cycle Time 84ns (-50) 104ns (-60) HPM (EDO) Cycle time 20ns (-50) 25ns (60) Min. R/W Cycle Time 84ns (-50) 104ns (-60) 124ns (70) HPM (EDO) Cycle Time 20ns (50) 25ns (-60) 30ns (-70) Min. R/W Cycle Time 84ns (-50) 104ns (-60) Burst Cycle Time 15ns (50) 16.6ns (-60) Min. R/W Cycle Time 84ns (-50) 104ns (-60) 124ns (70) H PM (EDO) Cycle time 20ns (50) 25ns (-60) 30ns (-70) Min. R/W Cycle Time 84ns (-50) 94ns (-60
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MB81141622 TC59R1809 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 GM72V1682 MB81141621 MB81G8322 MB81116421 16MEG MB81116422

16MX32

Abstract: SL32D4C16M4E-A60V SL32D4C16M4E-AxxV 16M X 32 Bits DRAM SO-DIMM with Extended Data Out (EDO) FEATURES GENERAL DESCRIPTION · The SiliconTech SL32D4C16M4E-AxxV is a 16M x 32 bits Dynamic RAM memory module. The SL32D4C16M4E-AxxV consists of eight CMOS 16M x 4 bits DRAMs in 32-pin 400-mil TSOP-II packages mounted on a 72-pin glass epoxy substrate. Decoupling capacitors of 0.1uF are mounted for the DRAMs. tRC tHPC 50ns 13ns 84ns 20ns SL.A60V · · · · · · · tCAC SL.A50V · Performance range
SiliconTech
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SL32D4C16M4E-A60V 16MX32 SL32D4C16M4E-A SL32D4C16M4E-A50V A0-A11 72-PIN
Abstract: 50ns 60ns tCAC 13ns 15ns tRC 84ns 104ns Pin Names Pin Name A0 ~ A11 DQ(0 ~7,9~16, 18~25,27 Unigen
Original
UG38W3248HSL-6

DRAM SO-DIMM

Abstract: SL32D6A2M1E-A50V SL32D6A2M1E-AxxV 2M X 32 Bits DRAM SO-DIMM with Extended Data Out (EDO) FEATURES GENERAL DESCRIPTION · The SiliconTech SL32D6A2M1E-AxxV is a 2M x 32 bits Dynamic RAM memory module. The module consists of four CMOS 1M x 16 bits DRAMs in 44-pin 400-mil TSOP-II packages mounted on a 72-pin glass epoxy substrate. Decoupling capacitors of 0.1uF are mounted for the DRAMs. Performance range: SiliconTech P/N tRC tHPC 15ns 84ns 20ns SL32D6A2M1E-A60V 60ns · · · · · · · tCAC
SiliconTech
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SL32D6A2M1E-A50V DRAM SO-DIMM SL32D6A2M1E-A DQ8-15 DQ16-23 DQ24-31

72-Pin SO-DIMM

Abstract: SL32D8A2M2E-A50V SL32D8A2M2E-AxxV 2M X 32 Bits DRAM SO-DIMM with Extended Data Out (EDO) FEATURES GENERAL DESCRIPTION · The SiliconTech SL32D8A2M2E-AxxV is a 2Mx 32 bits Dynamic RAM (DRAM) Small Outline-Dual Inline Memory Module (SODIMM). This module consists of four CMOS 2M x 8 bits DRAMs in 28-pin TSOP-II 300-mil packages mounted on a 72-pin glass epoxy substrate. Decoupling capacitors of 0.1uF are mounted for the DRAMs. tCAC tRC tHPC SL.-A50V 50ns 13ns 84ns 20ns SL.-A60V · · · · ·
SiliconTech
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SL32D8A2M2E-A50V SL32D8A2M2E-A60V SL32D8A2M2E-A A0-A10

edo dram 50ns 72-pin simm

Abstract: edo dram 72-pin simms 64mb SL36(S/T)4C16M4F-AxxC 16M X 36 Bits (64MB) DRAM 72-Pin SIMM with Extended Data Out (EDO) FEATURES · GENERAL DESCRIPTION Performance range: Part # tRAC tCAC tRC The SiliconTech SL36(S/T)4C16M4F-AxxC is a 16M x 36 bits Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). This module consists of nine CMOS 16M x 4 bits 3.3V DRAM components in 32-pin 400-mil SOJ packages. Decoupling capacitors of 0.1uF are also mounted. tHPC SL.-A50C 50ns 13ns 84ns 20ns SL.-A60C 60ns 15ns 104ns
SiliconTech
Original
BDQ22 BDQ30 BDQ31 edo dram 50ns 72-pin simm edo dram 72-pin simms 64mb dram 72-pin simms 64mb 4c16m4 64mb edo dram simm 4C16M4F-A SL36S4C16M4F-A SL36T4C16M4F-A 4C16M4F-A50C
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