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Part Manufacturer Description Datasheet BUY
HIP6601BCBZ Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
HS0-4424RH-Q Intersil Corporation BUF OR INV BASED MOSFET DRIVER visit Intersil
ISL6596CBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6605IRZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6609ACRZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy
HIP2100EIB Intersil Corporation 2A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, EPSOIC-8 visit Intersil

8/mosfet 4800

Catalog Datasheet MFG & Type PDF Document Tags

4800 8pin mosfet

Abstract: AC-DC Controllers 150 150 No 8-Pin SIP DIH-139 DC N/O SPST 19.00 48.00 + 200 0.10 5000 150 , : DIONICS Power MOSFET Photovoltaic Relays are State-of- the-Art solid state relays designed for numerous , continuous currents, depending upon the model number, from 1.0, up to 19.0 amps. All relays feature MOSFET , turn on the MOSFETs and cause the relay to conduct. The MOSFET outputs provide thermal stability , . (2)* 19.00 48.00 + 200 0.08 5000 150 No 6-Pin Package DC Wiring Config. (3
Dionics
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DIH-137 DIH-143 DIH-126 DIH-127 DIH-128 DIH-129 4800 8pin mosfet AC-DC Controllers Dionics MIL-R-28750 DIH-1378 DIH-1380

SJ 76 A DIODE EMI

Abstract: DIGITAL AUDIO MOSFET IRF6643TRPbF Key Parameters Features â'¢ Latest MOSFET silicon , Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area , . These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D , Can Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6643TRPbF
International Rectifier
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SJ 76 A DIODE EMI IRF6643TRP IRF6643P J-STD-020D
Abstract: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features ï'·ï'  Latest MOSFET silicon , ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques , make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier , Quantity Tape and Reel 4800 Orderable Part Number IRF6641TRPbF Absolute Maximum Ratings VGS ID @ International Rectifier
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IRF6641TRP IRF6641P
Abstract: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features â'¢ Latest MOSFET silicon , Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area , . These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D , Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6641TRPbF Absolute International Rectifier
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7F MARKING

Abstract: ANPEC Information S N-Channel MOSFET APM 4800 P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e , APM4800 N-Channel Enhancement Mode MOSFET Features Pin Description SO-8 · 30V/8A , D G Reliable and Rugged D S Low RDS(ON) 8 S Super High Dense Cell Design for Extremely 1 4 5 D SO-8 Package Top View Applications · D Power Management in , d lin g C o d e Tem p. R ange P ackage C ode APM 4800 K : APM 4800 XXXXX X X X X X - D a
ANPEC Electronics
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7F MARKING ANPEC J-STD-020A MIL-STD-883D-2003 883D-1005 JESD-22-B 883D-1011

2sj403

Abstract: 2SJ406 of package of small-signal power MOSFET series. See the tables on other pages. ale AP Ser 1 es , . (VGS±30V guaranteed in VDSS 450V series.) Designed as a power MOSFET with well-balanced characteristics , 2400 4800 2sk1433 2sk1434 2sk1435 2sk1436 T0-3PML 30 50 120 200 60 80 40m/55m 23m/35m 2400 4800 , 2SJ406 T0-220ML 200 ±20 5 6 8 12 20 24 32 48 25 25 30 40 1.5-2.5 0.8/1.1 0.6/0.8 0.37/0.5 0.17/0.23 550
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OCR Scan
2SK2142 2sj403 2sk2532 2sk2680 2SJ28 mosfet 4800 2sk2681 2SK2531 2SK2532 2SK2533 2SK2534 2SK2321 2SK2592

TO220 Semiconductor Packaging

Abstract: MOSFET HIGH VOLTAGE C o l l m e r Semiconductor MOS-FET, High Voltage Diodes N-Channel Silicon Power MOS-FET cF-I Series = Low RDS(ON) cF-III Series = Logic Level, High gfs cFAP-IIA = Reduced Turn Off Time cF-II Series , 0.006 9000 1250 250 285 TO3P 2SK3216-01 FAP-IIIBH 100 45.0 80 — 0.026 4800 1140 186 240 TO220 2SK3217-01MR FAP-IIIBH 100 50.0 70 — 0.025 4800 1140 230 265 TO-220F15 2SK3218-01 FAP-IIIBH 150 35.0 80 — 0.048 , CS54-08A 8 25 1.0 30.0 1 2 CS52-12A 12 10 0.5 45.0 1 1 CS52-14A 14 10 0.5 51.0 1 1 CS56-24 24 10 0.5
Allied Electronics Catalog
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TO220 Semiconductor Packaging MOSFET HIGH VOLTAGE 2SK2642-01MR 4800 mosfet 2SK208 2SJ314-01L 2SJ314-01S 2SK2248-01L 2SK2248-01S 2SK2687-01 2SK2893-01

IRF6603

Abstract: IRF6603TR1 PD - 94364E IRF6603 HEXFET® Power MOSFET VDSS Application Specific MOSFETs l Ideal , Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 , Junction-to-Ambient Units °C/W Notes through are on page 11 www.irf.com 1 4/8/04 IRF6603 Static , Charge ­­­ 60 90 nC 2 Ã MOSFET symbol A D G S e TJ = 25°C, IF = 20A
International Rectifier
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IRF6603TR1 AN-1035 603TR1

24v 12v 20A regulator

Abstract: IRF6607 PD - 94574B IRF6607 HEXFET® Power MOSFET l VDSS RDS(on) max Qg(typ.) l , Description The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 , 35 ­­­ ­­­ 3.0 1.0 °C/W Notes through are on page 11 www.irf.com 1 4/8/04 , Charge ­­­ 54 81 nC 2 Ã Conditions MOSFET symbol A V D showing the
International Rectifier
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24v 12v 20A regulator IRF6607TR1 6607TR1

mosfet 4800 circuit

Abstract: existing Surface Mount Techniques l IRF6603 Qg(typ.) 48nC PD - 94364F Power MOSFET VDSS 30V , combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm , MOSFET symbol showing the integral reverse G S D Ã p-n junction diode. TJ = 25°C, IS = 20A, VGS = , VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8
International Rectifier
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mosfet 4800 circuit IRF6612

DirectFET

Abstract: marking code V6 73 DIODE 94365E Power MOSFET 11.5m@VGS = 7.0V 13m@VGS = 4.5V MQ Applicable DirectFET Outline and , IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries , 92 1.2 47 39 V ns nC Conditions MOSFET symbol showing the integral reverse G D Ã S p-n , Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area
International Rectifier
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DirectFET marking code V6 73 DIODE IRF6621
Abstract: Compatible l Compatible with existing Surface Mount Techniques l HEXFET® Power MOSFET VDSS , MT Description The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the , has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with , â'"â'"â'" 26 39 nC 2 Ù MOSFET symbol A D G TJ = 25°C, IF = 9.6A di/dt = , 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area International Rectifier
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94365C

irf6603tr1

Abstract: mosfet 4800 buss voltage. 8 *dissipated primarily in Q1. For the synchronous MOSFET Q2, Rds(on) is an , PD - 94364F IRF6603 HEXFET® Power MOSFET VDSS RDS(on) max Qg(typ.) 30V , Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 , Characteristics Parameter Min. Typ. Max. Units Conditions MOSFET symbol IS Continuous Source Current
International Rectifier
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IRF660

IRF6602

Abstract: IRF6602TR1 PD-94363C IRF6602/IRF6602TR1 HEXFET® Power MOSFET VDSS l Ideal for CPU Core DC-DC , IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries , 77 nC 2 Ã Conditions MOSFET symbol A D showing the integral reverse G S , (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area
International Rectifier
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IRF6602TR1
Abstract: PD - 94366E IRF6601/IRF6601TR1 HEXFET® Power MOSFET l l l l l l l VDSS RDS(on , MT Description The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the , footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout , junction diode. TJ = 25°C, IS = 21A, VGS = 0V A â'"â'"â'" Conditions MOSFET symbol â'"â'"â , VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF6601 International Rectifier
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IRF6601TR1
Abstract: PD - 94364F IRF6603 HEXFET® Power MOSFET VDSS RDS(on) max Qg(typ.) 30V , Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 , Characteristics Parameter Min. Typ. Max. Units Conditions MOSFET symbol IS Continuous Source Current , 0 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating International Rectifier
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IRF6601TR1

Abstract: mosfet 4800 PD - 94366F IRF6601/IRF6601TR1 HEXFET® Power MOSFET l l l l l l l VDSS RDS(on , Description The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 , MOSFET symbol ­­­ 0.83 V Reverse Recovery Time ­­­ 60 90 ns Reverse Recovery , 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com
International Rectifier
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MQ 132

Abstract: IRF6602 PD - 94363C IRF6602/IRF6602TR1 HEXFET® Power MOSFET VDSS l Ideal for CPU Core DC-DC , IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries , 77 nC 2 Ã Conditions MOSFET symbol A D showing the integral reverse G S , Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com IRF6602
International Rectifier
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MQ 132
Abstract: PD - 94363C IRF6602/IRF6602TR1 HEXFET® Power MOSFET VDSS l Application Specific MOSFETs l , combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and , 380 1.2 62 77 V ns nC Conditions MOSFET symbol showing the integral reverse G D Ã S p-n , Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area International Rectifier
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IRF6604TR1

Abstract: IRF6604 Compatible l Compatible with existing Surface Mount Techniques l HEXFET® Power MOSFET VDSS , Description The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout , Conditions MOSFET symbol A V ns nC D showing the integral reverse G S p-n junction , 150°C Single Pulse 0 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum
International Rectifier
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IRF6604TR1
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