500 MILLION PARTS FROM 12000 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

8/mosfet 4800

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 150 150 No 8-Pin SIP DIH-139 DIH-139 DC N/O SPST 19.00 48.00 + 200 0.10 5000 150 , : DIONICS Power MOSFET Photovoltaic Relays are State-of- the-Art solid state relays designed for numerous , continuous currents, depending upon the model number, from 1.0, up to 19.0 amps. All relays feature MOSFET , turn on the MOSFETs and cause the relay to conduct. The MOSFET outputs provide thermal stability , . (2)* 19.00 48.00 + 200 0.08 5000 150 No 6-Pin Package DC Wiring Config. (3 ... Dionics
Original
datasheet

2 pages,
34.15 Kb

mosfet 4800 circuit DIH-126 DIH-127 DIH-128 DIH-129 DIH-134 DIH-135 DIH-136 DIH-137 DIH-139 Dionics "Switching diode" 6pin DIH-143 AC-DC Controllers 4800 8pin mosfet TEXT
datasheet frame
Abstract: DIGITAL AUDIO MOSFET IRF6643TRPbF Key Parameters Features • Latest MOSFET silicon , Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area , . These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D , Can Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6643TRPbF ... International Rectifier
Original
datasheet

9 pages,
440.51 Kb

TEXT
datasheet frame
Abstract: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features  Latest MOSFET silicon , ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques , make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier , Quantity Tape and Reel 4800 Orderable Part Number IRF6641TRPbF Absolute Maximum Ratings VGS ID @ ... International Rectifier
Original
datasheet

10 pages,
443.37 Kb

TEXT
datasheet frame
Abstract: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features • Latest MOSFET silicon , Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area , . These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D , Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6641TRPbF Absolute ... International Rectifier
Original
datasheet

9 pages,
246.61 Kb

TEXT
datasheet frame
Abstract: Information S N-Channel MOSFET APM 4800 P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e , APM4800 APM4800 N-Channel Enhancement Mode MOSFET Features Pin Description SO-8 · 30V/8A , D G Reliable and Rugged D S Low RDS(ON) 8 S Super High Dense Cell Design for Extremely 1 4 5 D SO-8 Package Top View Applications · D Power Management in , d lin g C o d e Tem p. R ange P ackage C ode APM 4800 K : APM 4800 XXXXX X X X X X - D a ... ANPEC Electronics
Original
datasheet

9 pages,
147.18 Kb

J-STD-020A APM4800 ANPEC 7F MARKING TEXT
datasheet frame
Abstract: of package of small-signal power MOSFET series. See the tables on other pages. ale AP Ser 1 es , . (VGS±30V guaranteed in VDSS 450V series.) Designed as a power MOSFET with well-balanced characteristics , 2400 4800 2sk1433 2sk1434 2sk1435 2sk1436 T0-3PML 30 50 120 200 60 80 40m/55m 23m/35m 2400 4800 , 2SJ406 2SJ406 T0-220ML T0-220ML 200 ±20 5 6 8 12 20 24 32 48 25 25 30 40 1.5-2.5 0.8/1.1 0.6/0.8 0.37/0.5 0.17/0.23 550 ... OCR Scan
datasheet

1 pages,
170.84 Kb

2SK1428 2SK1429 2SK1430 2SK1431 2SK1432 2SK1435 2SK1436 2SK1437 2SK2058 2SK2142 2SK2161 2sk2533 4800 mosfet 2sk2681 mosfet 4800 2sk2680 2SJ28 2sk2532 2SJ406 2sj403 TEXT
datasheet frame
Abstract: C o l l m e r Semiconductor MOS-FET, High Voltage Diodes N-Channel Silicon Power MOS-FET cF-I Series = Low RDS(ON) cF-III Series = Logic Level, High gfs cFAP-IIA = Reduced Turn Off Time cF-II Series , 0.006 9000 1250 250 285 TO3P 2SK3216-01 2SK3216-01 FAP-IIIBH 100 45.0 80 — 0.026 4800 1140 186 240 TO220 2SK3217-01MR 2SK3217-01MR FAP-IIIBH 100 50.0 70 — 0.025 4800 1140 230 265 TO-220F15 2SK3218-01 2SK3218-01 FAP-IIIBH 150 35.0 80 — 0.048 , CS54-08A CS54-08A 8 25 1.0 30.0 1 2 CS52-12A CS52-12A 12 10 0.5 45.0 1 1 CS52-14A CS52-14A 14 10 0.5 51.0 1 1 CS56-24 CS56-24 24 10 0.5 ... Allied Electronics Catalog
Original
datasheet

1 pages,
118.7 Kb

4800 mosfet 2SK208 2SK2642-01MR mosfet 4800 MOSFET HIGH VOLTAGE TO220 Semiconductor Packaging TEXT
datasheet frame
Abstract: PD - 94364E 94364E IRF6603 IRF6603 HEXFET® Power MOSFET VDSS Application Specific MOSFETs l Ideal , Description The IRF6603 IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 , Junction-to-Ambient Units °C/W Notes through are on page 11 www.irf.com 1 4/8/04 IRF6603 IRF6603 Static , Charge ­­­ 60 90 nC 2 Ã MOSFET symbol A D G S e TJ = 25°C, IF = 20A ... International Rectifier
Original
datasheet

11 pages,
196.28 Kb

IRF6603TR1 IRF6603 94364E TEXT
datasheet frame
Abstract: PD - 94574B 94574B IRF6607 IRF6607 HEXFET® Power MOSFET l VDSS RDS(on) max Qg(typ.) l , Description The IRF6607 IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 , 35 ­­­ ­­­ 3.0 1.0 °C/W Notes through are on page 11 www.irf.com 1 4/8/04 , Charge ­­­ 54 81 nC 2 Ã Conditions MOSFET symbol A V D showing the ... International Rectifier
Original
datasheet

11 pages,
196.15 Kb

IRF6607TR1 IRF6607 24v 12v 20A regulator 94574B TEXT
datasheet frame
Abstract: existing Surface Mount Techniques l IRF6603 IRF6603 Qg(typ.) 48nC PD - 94364F 94364F Power MOSFET VDSS 30V , combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm , MOSFET symbol showing the integral reverse G S D Ã p-n junction diode. TJ = 25°C, IS = 20A, VGS = , VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8 ... International Rectifier
Original
datasheet

13 pages,
307.01 Kb

mosfet 4800 circuit IRF6603 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
No abstract text available
/download/53562492-608890ZC/ddtncp1200discont.xls
On Semiconductor 29/08/2007 220 Kb XLS ddtncp1200discont.xls
No abstract text available
/download/11562902-608608ZC/ddtncp1200discont.xls
On Semiconductor 19/06/2002 220 Kb XLS ddtncp1200discont.xls
POWERSO-10 POWERSO-10 STRIPFET MOSFET Datasheet N-CHANNEL 20V - 0.0016 OHM - 160A POWERSO-10 POWERSO-10 STRIPFET MOSFET STV160NF02L STV160NF02L Document Format Size Document Number 8 Raw Text Format 1/8 December 2000 STV160NF02L STV160NF02L N-CHANNEL 20V - 0.0016 W - 160A PowerSO-10 STripFET] POWER MOSFET (1) V DD = 35V, I D = 45A, R G = 22 W design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6653-v1.htm
STMicroelectronics 19/01/2001 9.9 Kb HTM 6653-v1.htm
V.27ter: 1800 Hz �0 Hz 4-phase PSK - 2400 bps 1800 Hz �0 Hz 8-phase PSK - 4800 bps V.29: 1700 Hz �00 Hz 8-point QAM - 7200 bps 1700 Hz �00 Hz 16-point QAM - 9600 bps Rx performance 300 bps 9-dB bps. Data transfer is then achieved using V.27ter, which provides data rates of 2400 bps and 4800 bps : V.21, V.27ter, V.29 Data rates: 300, 2400, 4800, 7200, 9600 bps Symbol rate: 300, 1200, 1600, 2400 error rate (1000 bits/block) 4800 bps 19-dB SNR for 1e-5 block error rate (1000 bits/block) 7200
/datasheets/files/texas-instruments/sc/docs/dsps/softcoop/s_s3fax.htm
Texas Instruments 05/06/1998 6.88 Kb HTM s_s3fax.htm
Power Dissipation ADC08060ADC08060-8-Bit 20MSPS 20MSPS to 60MSPS 60MSPS 1.3mW/MSPS A/D Converter ADC08100ADC08100-8-Bit 20MSPS 20MSPS to 100MSPS 100MSPS 1.3mW/MSPS A/D Converter ADC08100CIMTC ADC08100CIMTC 8.0 b TSSOP 3.33 24 100.0 ADC08L060ADC08L060-8-Bit 10 MSPS to 60 MSPS 0.65 mW/MSPS A/D Converter with Internal Sample-and-Hold ADC08L060CIMT ADC08L060CIMT 8.0 b TSSOP 3.00 24 60.0 MSPS 59.10 dB 48.00 dB 0.06 W ADC08L060CIMTX ADC08L060CIMTX 8.0 b TSSOP 3.00 24 60.0 MSPS 59.10 dB 48.00 dB 0.06 W
/datasheets/files/national/q358.htm
National 27/02/2004 14.33 Kb HTM q358.htm
No abstract text available
/download/15096736-30156ZC/lpc22xx_adc.zip ()
ARM 21/04/2005 35.89 Kb ZIP lpc22xx_adc.zip
]="June"; months[7]="July"; months[8]="August"; months[9]="September"; months[10]="October"; months[11 ST2600C20R0 ST2600C20R0 R-PUK DISCRETE 2000 4800 2220 80 36800 38500 4 400 1.45 2900 500 .0115 ST2600C22R0 ST2600C22R0 R-PUK DISCRETE 2200 4800 2220 80 2400 4800 2220 80 36800 38500 4 400 1.45 2900 500 .0115 ST2600C26R0 ST2600C26R0 R-PUK DISCRETE 2600 4800 2220 80 36800 38500 4 400 1.45
/datasheets/files/international-rectifier/product-info/shortform/dslink/pd-244.html
International Rectifier 24/07/2000 17.6 Kb HTML pd-244.html
No abstract text available
/download/84984082-30153ZC/lpc21xx_adc.zip ()
ARM 21/04/2005 34.51 Kb ZIP lpc21xx_adc.zip
No abstract text available
/download/70472419-484523ZC/revamon.zip ()
Motorola 04/03/1998 316.64 Kb ZIP revamon.zip
]="June"; months[7]="July"; months[8]="August"; months[9]="September"; months[10]="October"; months[11 A-PUK (TO-200AB) DISCRETE 400 780 410 55 4800 5000 3 150 1.69 880 A-PUK (TO-200AB) DISCRETE 800 780 410 55 4800 5000 3 150 1.69 880 1200 780 410 55 4800 5000 3 150 1.69 880 500 .08 ST230C14C0 ST230C14C0 A-PUK (TO-200AB) DISCRETE 1400 780 410 55 4800 5000 3 150 1.69 880
/datasheets/files/international-rectifier/product-info/shortform/dslink/pd-35.html
International Rectifier 24/07/2000 14.39 Kb HTML pd-35.html