NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Preliminary TSM6970D TSM6970D 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS (V) RDS(on)(m) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. , N-Channel MOSFET w/ESD Protected TSSOP-8 Mechanical Drawing DIM A a B C D E e F L 3/4 , = 1.8V 20 8 6 Block Diagram Advance Trench Process Technology High Density , PA Switch Ordering Information Part No. Package Packing TSM6970DCA TSM6970DCA RV TSSOP-8 ... | Original |
4 pages, |
n-channel mosfet transistor FULLY PROTECTED MOSFET 4800 mosfet MOSFET TSSOP-8 dual n-channel MOSFET TSSOP-8 Dual N-Channel MOSFET mosfet 4800 TSM6970D TSM6970D abstract |
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| Abstract: Flow (CFM) (All Static Pressure (lnch-H2o) IRE) Noise Level (dB-A) (««> Weight 2 12.00 5.00 0.18 3500 28.45 0.13 34 48.00 YM1207PHS YM1207PHS(B>3 12.00 5.00 0.15 3000 23.42 0.09 29 48.00 YM2407PHS YM2407PHS(B)1 24.00 10.00 0.12 4000 34.04 0.17 39 48.00 YM2407PHS YM2407PHS(B)2 24 00 10.00 0.09 3500 28.45 0.13 34 48.00 YM2407PHS YM2407PHS(B>3 24.00 10.00 0.07 3000 23.42 0.09 29 48.00 ... | OCR Scan |
1 pages, |
UL94V-0 500VAC/1 UL94V-0 abstract |
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| Abstract: 2015 2015 3000 10 1 125 9,6 18,5 2018 2015 3000 10 1 125 9,6 22 2022 2022B 2022B 1 2022 4800 6,8 1 125 6,4 30 2030 2015B 2015B 2 -2015 3000 10 2 125 9,6 37 2037 2015B 2015B 2 2015 3000 10 2 100 9,6 45 2045 2022B 2022B 2 2022 4800 6,8 2 120 6,4 55 2055 2022B 2022B 2 2022 4800 6,8 2 100 6,4 75 2075 2110B 2110B 1 2022 4800 6,8 3 110 1,6 90 2090 2110B 2110B 1 2022 4800 6,8 4 120 1,6 110 2110 2110B 2110B 1 2018 4800 8 5 100 1,6 0,4 404 751 750 1 230 407 70 750 ... | Original |
1 pages, |
230 96 L801 4045B 4030B 25P5 2110B 150WJ lkeb datasheet abstract |
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| Abstract: 3000 3600 4200 4800 5400 6000 Frequency (MHz) REV. X1 ZN2PD-63 ZN2PD-63+ 8/10/2007 Page , 2400 3000 3600 4200 4800 5400 19 1800 6000 2400 3000 Frequency (MHz) 4800 5400 6000 4800 5400 6000 4.0 3.5 Phase Unbalance (deg.) 0.25 0.20 0.15 0.10 0.05 3.0 2.5 2.0 1.5 1.0 0.5 2400 3000 3600 4200 4800 5400 ... | Original |
1 pages, |
datasheet abstract |
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| Abstract: 4200 4800 5400 10 1800 6000 2400 3000 Frequency (MHz) 4800 5400 6000 4800 5400 6000 4.0 3.5 Phase Unbalance (deg.) 0.25 0.20 0.15 0.10 0.05 3.0 2.5 2.0 1.5 1.0 0.5 2400 3000 3600 4200 4800 5400 0.0 1800 6000 , 1.00 1800 2400 3000 3600 4200 4800 5400 6000 Frequency (MHz) REV. X2 ZN2PD-63 ZN2PD-63+ 8/10/2010 Page 1 of 1 ... | Original |
1 pages, |
datasheet abstract |
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| Abstract: TSM7401 TSM7401 20V N-Channel MOSFET w/ESD Protected SOP-8 PRODUCT SUMMARY VDS (V) RDS(on)(m) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain ID (A) 25 @ VGS = , /6 Version: C07 TSM7401 TSM7401 20V N-Channel MOSFET w/ESD Protected SOP-8 Mechanical Drawing , Application Ordering Information Part No. Package Packing TSM7401CS TSM7401CS RL SOP-8 2.5Kpcs / 13" Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter ... | Original |
6 pages, |
TSM7401CS TSM7401 mosfet 4800 27BSC TSM7401 abstract |
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| Abstract: TSM6968SD TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS (V) RDS(on)(m) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 , TSSOP-8 3Kpcs / 13" Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless , TSM6968SD TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 Mechanical Drawing DIM A a B C D E , MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter ... | Original |
6 pages, |
TSM6968SDCA TSM6968SD MOSFET TSSOP-8 4800 mosfet mosfet 4800 esd protect mosfet MOSFET TSSOP-8 dual n-channel TSM6968SD abstract |
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| Abstract: TSM6968D TSM6968D 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS (V) RDS(on)(m) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 , TSSOP-8 3Kpcs / 13" Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless , TSM6968D TSM6968D 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 Mechanical Drawing TSSOP-8 DIMENSION DIM , MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC, unless otherwise noted) Parameter ... | Original |
6 pages, |
TSM6968DCA TSM6968D MOSFET TSSOP-8 dual n-channel MOSFET TSSOP-8 FULLY PROTECTED MOSFET Dual N-Channel MOSFET esd protect mosfet 4800 mosfet mosfet 4800 TSM6968D abstract |
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| Abstract: TSM6968D TSM6968D 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS (V) RDS(on)(m) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 , TSSOP-8 3Kpcs / 13" Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless , N-Channel MOSFET w/ESD Protected TSSOP-8 Mechanical Drawing TSSOP-8 DIMENSION DIM MILLIMETERS , Surface Mounted on FR4 Board, t 5 sec. 1/6 Version: B07 TSM6968D TSM6968D 20V Dual N-Channel MOSFET w ... | Original |
6 pages, |
TSM6968DCA TSM6968D TSM6968D abstract |
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| Abstract: TSM6968SD TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS (V) RDS(on)(m) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 , TSSOP-8 3Kpcs / 13" Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless , N-Channel MOSFET w/ESD Protected TSSOP-8 Mechanical Drawing DIM A a B C D E e F L TSSOP-8 , Surface Mounted on FR4 Board, t 5 sec. 1/6 Version: C07 TSM6968SD TSM6968SD 20V Dual N-Channel MOSFET w ... | Original |
6 pages, |
TSM6968SDCA TSM6968SD FULLY PROTECTED MOSFET TSM6968SD abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| * > N;Enh;30.0V 10.0A 14.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN4800LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 5.65m RS 40 3 1.35m RG 20 2 15.0 CGS 2 3 775p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 162p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 VTO=1.60 KP=13.8 .MODEL DCGD D (CJO=162p VJ=0.600 M=0.680 .MODEL DSUB D (IS=41.5n N=1.50 RS=19.0m BV www.datasheetarchive.com/files/diodes-inc/spice-model/5000.mod |
Diodes, Inc. | 04/09/2012 | 0.67 Kb | MOD | 5000.mod |
| lumens 1000 lumens efficacy 86 lumens/watt 18 lumens/watt color temperature 4800K -Bridge driver: 4 high voltage switches (HEXFET® Power MOSFET or IGBT). CIC drivers to control switches. Boost converter: Low voltage HEXFET® Power MOSFET. Low voltage driver IC Suggested Design: Boost switch: Gen 5 HEXFET Power MOSFET IRF1310NS IRF1310NS IRF1310NS IRF1310NS N : Gen 3 HEXFET Power MOSFET IRF840 IRF840 IRF840 IRF840 N-Channel 500V (BR)DSS R DS (on) 850m W TO-220AB www.datasheetarchive.com/files/international-rectifier/docs/wcd00002/wcd00203.htm |
International Rectifier | 06/10/1998 | 9.53 Kb | HTM | wcd00203.htm |
| Software for Power MOSFET Modeling * * by C. Frank Wheatley, H. R. Ronan, G. M. Dolny * * C21 2 1 4800P C23 2 3 200P C24 2 4 9400P 9400P 9400P 9400P DBODY 9 3 DMOD2 DBREAK 3 7 DMOD3 D1 5 6 DMOD E41 5 11 4 1 1 .01827 R21 2 1 1E9 R91 9 1 0.00654 VPINCH 6 8 DC 8.0 VMEAS 8 11 DC 0 VBREAK 7 1 DC 240 .MODEL DMOD D (IS=1.0e-13 N=0.03 RS=0.001) .MODEL DMOD2 D (CJO=4200P 4200P 4200P 4200P TT=1000N 1000N 1000N 1000N IS=8.7e-13) .MODEL DMOD3 D (IS=1.0e-13 RS=1.111 N=1.0) .MODEL JMOD NJF (VTO=-8.0 BETA=1216.2 IS=8.7e-19 RD=0.05983) .MODEL MOSMOD NMOS (VTO=4.463 KP www.datasheetarchive.com/files/harris/data/mm/mm3/mm3226/mm3226.mdl |
Harris | 15/08/1997 | 1.13 Kb | MDL | mm3226.mdl |
| Software for Power MOSFET Modeling * * by C. Frank Wheatley, H. R. Ronan, G. M. Dolny * * C21 2 1 4800P C23 2 3 200P C24 2 4 9400P 9400P 9400P 9400P DBODY 9 3 DMOD2 DBREAK 3 7 DMOD3 D1 5 6 DMOD E41 5 11 4 1 1 .01827 R21 2 1 1E9 R91 9 1 0.00654 VBREAK 7 1 DC 240 VMEAS 8 11 DC 0 VPINCH 6 8 DC 8.0 .MODEL DMOD D (IS=1.0e-13 N=0.03 RS=0.001) .MODEL DMOD2 D (CJO=4200P 4200P 4200P 4200P TT=1000N 1000N 1000N 1000N IS=8.7e-13) .MODEL DMOD3 D (IS=1.0e-13 RS=1.111 N=1.0) .MODEL JMOD NJF (VTO=-8.0 BETA=1216.2 IS=8.7e-19 RD=0.05983) .MODEL MOSMOD NMOS (VTO=4.463 KP www.datasheetarchive.com/files/harris/data/mm/mm3/mm3231/mm3231.mdl |
Harris | 15/08/1997 | 1.13 Kb | MDL | mm3231.mdl |
| technology. Product availability: Si4800 in SOT96-1 (SO8). Low on SI4800-01 Si4800 N-channel enhancement mode field-effect transistor (on) (m Ohm) SI4800 9 Single N-channel 7.5 30 Single N Status SI4800 SI4800 9340 567 50118 Standard Marking * Reel Pack, SMD www.datasheetarchive.com/files/philips/pip/si4800-01-v1.html |
Philips | 14/02/2002 | 7.22 Kb | HTML | si4800-01-v1.html |
| SI4800-01 Product information page Si4800; N -effect transistor in a plastic package using TrenchMOS² 1 technology. Product availability: Si4800 in SOT96-1 (SO8). Features Low on-state resistance Fast switching TrenchMOS² technology releasedate Datsheet status Page count File size Si4800 N-channel enhancement ) Marking/Packing Specific Package Device Status SI4800 SI4800 /T3 9340 www.datasheetarchive.com/files/philips/pip/si4800-01.html |
Philips | 23/04/2003 | 2.65 Kb | HTML | si4800-01.html |
| - 50 V N-channel MOSFETs 25 Single N-channel 100 4.1@4.5V 2.8@10V 7.3 PH2925U PH2925U PH2925U PH2925U@pip/PH2925U-02.html,1 ?2.65@10V 12.8 PH3830L PH3830L PH3830L PH3830L@pip/PH3830L-03.html,1 SOT669@package/SOT669.html 20 - 50 V N-channel MOSFETs .html,1 SOT669@package/SOT669.html 20 - 50 V N-channel MOSFETs 30 Single N-channel 80 5.7@10V?8.5@4.5V .html 20 - 50 V N-channel MOSFETs 30 Single N-channel 67 8.2@10V?13@4.5V PHB101NQ04T PHB101NQ04T PHB101NQ04T PHB101NQ04T@pip/PHP_PHB101NQ04T-01 PHB101NQ04T-01 PHB101NQ04T-01 PHB101NQ04T-01.html,1 SOT404@package/SOT404.html 20 - 50 V N-channel MOSFETs 40 Single N-channel 75 8@10V 12 www.datasheetarchive.com/download/33878166-646792ZC/41380-v1.zip (M:\cd1\selectionguides\selectionguides\content\41380.txt) |
Philips | 13/06/2005 | 2.47 Kb | ZIP | 41380-v1.zip |
| .06) .MODEL S1A5JF NJF (VTO=-6.8 BETA=1.0 LAMBDA=1.0) .MODEL S1A5DB D (CJO=480.0P RS=0.25 VJ=0.6 M=0.29 BV .SUBCKT S1A5_PF 20 10 30 *POLYFET HIGH POWER HIGH FREQUENCY RF N-CHANNEL VERTICAL DMOS MOSFET, 3 *Node 1,D *Node 2,G *Node 3,S * LGATE 10 11 0.312 N RGATE 11 12 0.5 CG 10 30 0.51 P CRSS 12 17 16.5 P CISS 12 14 207 P LS 14 30 0.189 N CS 14 30 3.85 P LD 17 20 0.18 N CD 20 30 1.23 P R_RC 16 17 16.5 C_RC 14 16 87.8 P MOS 13 12 14 14 S1A5MOS L=1.1U W= 0.415 *D G S B LEVEL1 JFET 17 14 13 S1A5 www.datasheetarchive.com/files/kaleidoscope/cad/visionics_edwinxp140/edwinxp/eds_sbk/polyfet/s1a5_pf.sbc |
Kaleidoscope | 07/07/1999 | 0.63 Kb | SBC | s1a5_pf.sbc |
| *POLYFET RF DEVICES *05/11/99 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET * Half SR705 SR705 SR705 SR705, VGS=3.61 IDQ=600MA 600MA 600MA 600MA *NOTE _RC 16 17 16.5 C_RC 14 16 87.8P MOS 13 12 14 14 SR705MOS SR705MOS SR705MOS SR705MOS L=1.1U W= 0.415 ;D G S B SR705MOS SR705MOS SR705MOS SR705MOS NMOS(VTO=3.15 KP=0.9E-5 LAMBDA=0.15 RD= 0.05 RS= 0.06) .MODEL SR705JF SR705JF SR705JF SR705JF NJF (VTO=-6.8 BETA=1.0 LAMBDA=1.0) .MODEL SR705DB SR705DB SR705DB SR705DB D (CJO=480.0P RS=0.25 VJ=0.6 M=0.29 BV= 65.0) .ENDS www.datasheetarchive.com/files/polyfet/eagle/sr705.lib |
Polyfet | 16/03/2004 | 1.02 Kb | LIB | sr705.lib |
| *POLYFET RF DEVICES *05/11/99 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *VGS=3.6 IDQ=581.12 MA *NOTE:-HP/EESOF USES 1.23P R_RC 16 17 16.5 C_RC 14 16 87.8P MOS 13 12 14 14 S1A5MOS L=1.1U W= 0 .MODEL S1A5MOS NMOS(VTO=3.15 KP=0.9E-5 LAMBDA=0.15 RD= 0.05 RS= 0.06) .MODEL S1A5JF NJF (VTO=-6.8 BETA=1.0 LAMBDA=1.0) .MODEL S1A5DB D (CJO=480.0P RS=0.25 VJ=0.6 M=0.29 BV= 65.0) .ENDS *$ www.datasheetarchive.com/download/25311071-688992ZC/ss2pspu.zip (SR705.spu) |
Polyfet | 23/10/2012 | 221.6 Kb | ZIP | ss2pspu.zip |