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75OC/W

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Abstract: -8 Rthja = 75oC/W ELECTRICAL SPECIFICATIONS (VIN=1.8V, VCNTL=3.3V, VREFEN=0.9V, COUT=10uF(Ceramic), T A , thermal resistance (Rthja is layout dependent) for ESOP-8 package (Exposed Pad) is 75oC/W on standard , calculated by following formula: PD(MAX) = (125oC - 25oC) / 75oC/W = 1.33W The thermal resistance Rthja of , .) -Thermal Resistance from Junction to Case (R thjc) 260°C 28°C/W Note1 : Exceeding the absolute Advanced Power Electronics
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esop8

Abstract: 1280AMP -8 8 NC GND 7 NC 6 5 VCNTL NC Package Type MP : ESOP-8 VOUT Rthja = 75oC/W , is layout dependent) for ESOP-8 package (Exposed Pad) is 75oC/W on standard JEDEC 51-7 (4 layers , formula: PD(MAX) = (125oC - 25oC) / 75oC/W = 1.33W The thermal resistance Rthja of ESOP-8 (Exposed Pad) is , .) -Thermal Resistance from Junction to Case (R thjc) 260°C 28°C/W AP1280AMP Note1 : Exceeding the
Advanced Power Electronics
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1280AMP esop8 ESOP-8 voltage regulator 12v to 6V 2a ap128

ESOP-8

Abstract: -8 8 NC GND 7 NC 6 5 VCNTL NC Package Type MP : ESOP-8 VOUT Rthja = 75oC/W , is layout dependent) for ESOP-8 package (Exposed Pad) is 75oC/W on standard JEDEC 51-7 (4 layers , formula: PD(MAX) = (125oC - 25oC) / 75oC/W = 1.33W The thermal resistance Rthja of ESOP-8 (Exposed Pad) is , .) -Thermal Resistance from Junction to Case (R thjc) 260°C 28°C/W AP1280AMP Note1 : Exceeding the
Advanced Power Electronics
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8977MP

Abstract: GND Halogen-Free 4 GND NC 6 VCNTL 5 MP : ESOP-8 NC ESOP-8 Rthja = 75oC/W , layout dependent) for ESOP-8 package (Exposed Pad) is 75oC/W on standard JEDEC 51-7 (4 layers, 2S2P , D(MAX) = (125oC - 25oC) / 75oC/W = 1.33W The thermal resistance Rthja of ESOP-8 (Exposed Pad) is , ) 28°C/W Note1 : Exceeding the absolute maximum rating may damage the device. OPERATING RATING
Advanced Power Electronics
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8977MP APE8977MP

8977MP

Abstract: 8977M GND REFEN VOUT 1 2 3 4 ESOP-8 8 NC GND 7 NC 6 VCNTL 5 NC Rthja = 75oC/W , is layout dependent) for ESOP-8 package (Exposed Pad) is 75oC/W on standard JEDEC 51-7 (4 layers , formula: P D(MAX) = (125oC - 25oC) / 75oC/W = 1.33W The thermal resistance Rthja of ESOP-8 (Exposed Pad , °C/W Note1 : Exceeding the absolute maximum rating may damage the device. APE8977MP (Note1
Advanced Power Electronics
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8977M APE8977X-HF

8977MP

Abstract: GND 4 GND NC 6 VCNTL 5 MP : ESOP-8 NC ESOP-8 Rthja = 75oC/W ELECTRICAL , layout dependent) for ESOP-8 package (Exposed Pad) is 75oC/W on standard JEDEC 51-7 (4 layers, 2S2P , D(MAX) = (125oC - 25oC) / 75oC/W = 1.33W The thermal resistance Rthja of ESOP-8 (Exposed Pad) is , ) 28°C/W Note1 : Exceeding the absolute maximum rating may damage the device. (Note2) OPERATING
Advanced Power Electronics
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Abstract: NC 7 NC GND 6 VCNTL 5 NC ESOP-8 Rthja = 75oC/W ELECTRICAL SPECIFICATIONS (VIN , layout dependent) for ESOP-8 package (Exposed Pad) is 75oC/W on standard JEDEC 51-7 (4 layers, 2S2P , D(MAX) = (125oC - 25oC) / 75oC/W = 1.33W The thermal resistance Rthja of ESOP-8 (Exposed Pad) is , ) 28°C/W Note1 : Exceeding the absolute maximum rating may damage the device. (Note2 Advanced Power Electronics
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AP1280MP 1280MP

DFN 3x3 PACKAGE

Abstract: DFN 3x3 temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t , 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=75oC/W 0.1 , Rating 30 +20 13 10.4 30 3.1 -55 to 150 -55 to 150 Units V V A A A W Total Power Dissipation , Maximum Thermal Resistance, Junction-ambient 3 Rating 40 Units /W 1 201109221 Data &
Advanced Power Electronics
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DFN 3x3 PACKAGE DFN 3x3 AP2430GN3-HF
Abstract: REFEN 8 4 NC 7 NC GND VCNTL 5 MP : ESOP-8 6 NC ESOP-8 Rthja = 75oC/W , Pad) is 75 C/W on standard JEDEC 51-7 (4 layers, 2S2P) thermal test board. The maximum power dissipation at TA = o 25 C can be calculated by following formula: P D(MAX) = (125oC - 25oC) / 75oC/W = , 28° C/W Note1 : Exceeding the absolute maximum rating may damage the device. OPERATING RATING Advanced Power Electronics
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ESOP-8

Abstract: esop8 75oC/W ELECTRICAL SPECIFICATIONS (VIN=1.8V, VCNTL=3.3V, VREFEN=0.9V, COUT=10uF(Ceramic), T A =25oC , be calculated by following formula: P D(MAX) = (125oC - 25oC) / 75oC/W = 1.33W The thermal resistance , .) -Thermal Resistance from Junction to Case (R thjc) 260°C 28°C/W AP1280AMP Note1 : Exceeding the , o thermal resistance (Rthja is layout dependent) for ESOP-8 package (Exposed Pad) is 75 C/W on
Advanced Power Electronics
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ddrIII

esop8

Abstract: 1280AMP 75oC/W ELECTRICAL SPECIFICATIONS (VIN=1.8V, VCNTL=3.3V, VREFEN=0.9V, COUT=10uF(Ceramic), T A =25oC , following formula: P D(MAX) = (125oC - 25oC) / 75oC/W = 1.33W The thermal resistance Rthja of ESOP , .) -Thermal Resistance from Junction to Case (R thjc) 260°C 28°C/W AP1280AMP Note1 : Exceeding the , resistance (Rthja is layout dependent) for ESOP-8 package (Exposed Pad) is 75 C/W on standard JEDEC 51-7 (4
Advanced Power Electronics
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Abstract: VCNTL GND VIN 7 NC GND 6 5 VCNTL NC Rthja = 75oC/W Rthja = 40oC/W ELECTRICAL , be calculated by following formula: P D(MAX) = (125oC - 25oC) / 75oC/W = 1.33W The thermal resistance , -252-5L 28°C/W 6°C/W 260°C AP1270 Note1 : Exceeding the absolute maximum rating may damage the device , o thermal resistance (Rthja is layout dependent) for ESOP-8 package (Exposed Pad) is 75 C/W on Advanced Power Electronics
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1270MP 1270H
Abstract: . . . . . . . . . . . . . . . . . . . 115oC/W 28oC/W Ceramic LCC Package . . . . . . . . . . . . . . 75oC/W 23oC/W Metal Can Package . . . . . . . . . . . . . . . . . 160oC/W 75oC/W Package Power Dissipation Limit at +75oC for TJ +175oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . , Dissipation Derating Factor Above +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . Harris Semiconductor
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HA-2520/883 HA-2522/883 MIL-STD883 HA-2522/ MIL-STD-883

AP-127

Abstract: VCNTL GND VIN 7 NC GND 6 5 VCNTL NC Rthja = 75oC/W Rthja = 40oC/W ELECTRICAL , Pad) is 75 C/W on standard JEDEC 51-7 (4 layers, 2S2P) thermal test board. The maximum power dissipation at T A = o 25 C can be calculated by following formula: P D(MAX) = (125oC - 25oC) / 75oC/W = 1.33W , -252-5L 28°C/W 6°C/W 260°C AP1270 Note1 : Exceeding the absolute maximum rating may damage the device
Advanced Power Electronics
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AP-127

HA2-2520/883

Abstract: . 115oC/W 28oC/W Ceramic LCC Package . . . . . . . . . . . . . . 75oC/W 23oC/W Metal Can Package . . . . . . . . . . . . . . . . . 160oC/W 75oC/W Package Power Dissipation Limit at +75oC for TJ , +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/oC Ceramic LCC
Intersil
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HA2-2520/883 ISO9000

TSOP65P640X120-25M

Abstract: TSOP65 = 50oC/W 20 TA = +25oC VDD = 5 V RQJA = 75oC/W 0 0 20 40 60 80 100 Dwg. GP-062-11 0 0 , V 20 TA = +50oC VDD = 5 V RQJA = 50oC/W 20 TA = +50oC VDD = 5 V RQJA = 75oC/W 0 0 20 , RQJA = 75oC/W VCE = 3 V 60 VCE = 2 V VCE = 3 V 40 VCE = 4 V 20 TA = +85oC VDD = 5 V , RJA Test Conditions* Package A, 1-layer PCB based on JEDEC standard Value Units 50 32 85 ºC/W ºC/W ºC/W Package Thermal Resistance Package LP, 2-layer PCB with 3.8 in.2 copper area each
Allegro MicroSystems
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TSOP65P640X120-25M TSOP65 Direct Replacement SANKEN 16-BIT LED DRIVER WITH SHIFT REGISTER AND LATCH A6276ELWTR-T A6276 TB62706BN/BF A6275 SOIC127P1030X265-24M

A6276

Abstract: Allegro A6276 40 40 20 TA = +25oC VDD = 5 V RQJA = 50oC/W 20 TA = +25oC VDD = 5 V RQJA = 75oC/W 0 , +50oC VDD = 5 V RQJA = 75oC/W 0 0 20 40 60 80 100 Dwg. GP-062-10 0 0 20 40 60 80 100 Dwg. GP , = 4 V 20 TA = +85oC VDD = 5 V RQJA = 75oC/W VCE = 3 V 60 VCE = 2 V VCE = 3 V 40 VCE = 4 , -layer PCB based on JEDEC standard Value Units 50 32 85 ºC/W ºC/W ºC/W Package Thermal Resistance , DISSIPATION IN WATTS 4.0 3.5 24-PIN TSSOP*, R JA = 32°C/W 3.0 24-PIN DIP, RJA = 50°C/W 2.5
Allegro MicroSystems
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Allegro A6276

HM-6514-9

Abstract: HM3-6514-9 JC CERDIP Package . . . . . . . . . . . . . . . . 75oC/W 15oC/W PDIP Package . . . . . . . . . . . . . . . . . . . 75oC/W N/A CLCC Package . . . . . . . . . . . . . . . . . . 90oC/W 33oC/W , E 8 9 E Chip Enable W Data Input Q Data Output 16 A8 A3 4 15 A9 A0 5 14 DQ0 A1 6 13 DQ1 A2 7 10 W © Harris Corporation 1997 17 3 , A5 PIN W 18 VCC A6 1 GND A6 HM-6514 (CLCC) TOP VIEW A5 HM-6514 (PDIP
Harris Semiconductor
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HM3-6514S-9 HM3-6514B-9 HM3-6514-9 HM1-6514S-9 HM1-6514B-9 HM1-6514-9 HM-6514-9 HM3-6514 a2712 24502BVA 8102402VA

HM-6514-9

Abstract: hm6514-9 JC CERDIP Package . . . . . . . . . . . . . . . . 75oC/W 15oC/W PDIP Package . . . . . . . . . . . . . . . . . . . 75oC/W N/A CLCC Package . . . . . . . . . . . . . . . . . . 90oC/W 33oC/W , E Chip Enable W D Data Input Q Data Output 1 18 17 Write Enable 3 16 A8 4 15 A9 A0 10 W A4 A3 11 DQ3 GND 2 Address Input 5 14 DQ0 , VCC A5 PIN W 18 VCC A6 1 GND A6 HM-6514 (CLCC) TOP VIEW A5 HM
Intersil
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hm6514-9 6514 33oC 8102404VA 6514-9

24502BVA

Abstract: 8102402VA . . . . . . . 75oC/W 15oC/W PDIP Package . . . . . . . . . . . . . . . . . . . 75oC/W N/A 33oC/W , Chip Enable W D Data Input Q Data Output 1 18 17 Write Enable CAUTION , © Intersil Americas Inc. 2002. All Rights Reserved 3 16 A8 4 15 A9 A0 10 W A4 A3 11 , DQ2 8 9 10 11 DQ3 17 A7 VCC 2 DESCRIPTION W A5 PIN A6 18 VCC , LATCHED ADDRESS REGISTER GATED COLUMN I/O SELECT 4 A 4 G 4 1 OF 4 E W DQ 2
Intersil
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schottky barrier Rectifier S1040

Abstract: s1040 ), 75oC/W (Note 2), 50oC/W (Note 3) junction to ambient air (see last page) UPDS1040 · Notes: 1
Microsemi
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schottky barrier Rectifier S1040 s1040 S1040 schottky S1040 datasheet JESD97 AZ MARKING CODE S1040

JESD97

Abstract: S3100 Point (RJS): 6.0 C/W · · Thermal Resistance (RJA): 100oC/W (Note 1), 75oC/W (Note 2), 50oC/W
Microsemi
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UPDS3100 S3100

DG200AK

Abstract: DG201 free Resistance (Typical, Note 1) JA JC CERDIP Package . . . . . . . . . . . . . . . . 75oC/W 20oC/W PDIP , . . . . . . . . . . . . 75oC/W 20oC/W PDIP Package . . . . . . . . . . . . . . . . . . . 145oC/W
Harris Semiconductor
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DG200 DG201 DG200AA DG200BK DG200CJ DG200BA DG200AK DG201 free dg201 cross 28VP-P
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