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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Integrated Suppression Clamp Diode UAA1044 UAA1044 AUTOMOTIVE DIRECTION INDICATOR SILICON MONOLITHIC INTEGRATED , PLASTIC PACKAGE CASE 626-04 1 D SUFFIX PLASTIC PACKAGE CASE 751-01 SO-8 Designer's is a trademark of , TOLERANCING PER ANSI Y14.5M, 1982. - A- fl ñ R fi ¡i 8 5 t r D SUFFIX PLASTIC PACKAGE CASE 751-01 SO-8 ... | OCR Scan |
4 pages, |
UAA1044 hk relay Switch N7 UAA1044/D UAA1044/D abstract |
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| Abstract: NUP4106 NUP4106 is a low capacitance TVS diode array designed to protect sensitive electronics such as , integrated design of the NUP4106 NUP4106 offers surge rated, low capacitance steering diodes and a TVS diode , the internal TVS diode as reference. I/O 1 I/O 2 Option 1 Protection of four data lines and the , line exceeds the working voltage of the TVS plus one diode drop (Vc=Vf + VTVS). I/O 3 I/O 4 , The data lines are referenced to the supply voltage. The internal TVS diode prevents overvoltage on ... | Original |
7 pages, |
NUP4106DR2G NUP2201MR6 NUP4106 NUP4106 abstract |
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| Abstract: bias and power supply isolation resistor. The new NUP4201DR2 NUP4201DR2 is a low capacitance TVS diode array , surge rated, low capacitance steering diodes and a TVS diode integrated in a single package (SO-8). If , the internal TVS diode as reference. I/O 1 I/O 2 Option 1 Protection of four data lines and the , voltage of the TVS plus one diode drop (Vc=Vf + VTVS). I/O 4 I/O 3 I/O 4 Figure 5. For this , to the supply voltage. The internal TVS diode prevents overvoltage on the supply rail. Biasing of ... | Original |
8 pages, |
Power Line Communication NUP4201DR2G NUP4201DR2 disadvantages of microcontroller diode marking YG NUP4201DR2 abstract |
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| Abstract: oscillator, that drives external diode/capacitor network. 8 PWRGND No connection. Ground reference , Circuit with Better ORing Diode 1.0 mF VCC 48 V + PWR GND SIG GND COMP 0.1 mF Charge , rated for a maximum dc voltage of 15 volts. An internal shunt diode is included for applications where , safe start-ups at high input voltages. Pshunt diode + VCC @ * VCC (Vinseries ) * 2 mA * (Iout , across it and the current through it. As was the case with the shunt diode, when calculating the load ... | Original |
7 pages, |
NIS6201DR2G NIS6201 NIS6111 M1MA174T1 LDO MARKING BAS16LT1 MF diode By 127 NIS6201 abstract |
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| Abstract: external diode/capacitor network. 8 PWRGND No connection. Ground reference pin for control , 1.0 k Figure 2. Application Circuit with Better ORing Diode 1.0 mF VCC + 48 V PWR GND , Input The Vcc pin is rated for a maximum dc voltage of 15 volts. An internal shunt diode is included , NIS6201 NIS6201 Pshunt diode + The overcharge comparator detects when the voltage at Vreg is 10% greater than , by the voltage drop across it and the current through it. As was the case with the shunt diode, when ... | Original |
8 pages, |
NIS6201DR2G NIS6201 NIS6111 M1MA174T1 BAS16LT1 NIS6201 abstract |
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| Abstract: Internal Bootstrap Diode Reduces Parts Count and Total Solution Cost 8 SO-8 D SUFFIX CASE 751 , 1.4 V Thermal Shutdown High-Side Driver Low-Side Driver Charge Pump Diode Forward , conjunction with an internal diode to VS, a 0.1 uF to 1.0 uF ceramic capacitor connected between BST and DRN , for CBST of 60 nF. Internal or External Bootstrap Diode For convenience, a bootstrap diode is internally provided by the NCP5355 NCP5355. This internal diode reduces system cost and parts count. However, this ... | Original |
12 pages, |
NCP5314 diode marking YG NCP5306 BAS16HT1 NCP5316 NCP5351 NCP5355 NCP5355D NCP5355DR2 BAT54HT1 NTD80N02 620 tg diode NCP5355 abstract |
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| Abstract: 0.065 W, VGS = 4.5 V (Typ) Miniature SO-8 Surface Mount Package - Saves Board Space Diode is Characterized for Use in Bridge Circuits Diode Exhibits High Speed, with Soft Recovery VDSS RDS(ON) TYP , 3.5 A) 35 ns nC BODY-DRAIN DIODE RATINGS (Note 2) Diode Forward On-Voltage (IS = 2 Adc , Resistance DRAIN-TO-SOURCE DIODE CHARACTERISTICS high di/dts. The diode's negative di/dt during ta is , uncontrollable diode characteristic and is usually the culprit that induces current ringing. Therefore, when ... | Original |
8 pages, |
NTMD4N03R2 AN569 e4n03 NTMD4N03R2 abstract |
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| Abstract: capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode , Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft , DIODE CHARACTERISTICS Forward On-Voltage (Note 2) (IS = 3.0 Adc, VGS = 0 Vdc) (IS = 3.0 Adc, VGS = , DRAIN-TO-SOURCE DIODE CHARACTERISTICS high di/dts. The diode's negative di/dt during ta is directly controlled , diode characteristic and is usually the culprit that induces current ringing. Therefore, when comparing ... | Original |
8 pages, |
MMDF3N02HDR2G MMDF3N02HDR2 MMDF3N02HD AN569 D3N02 MMDF3N02HD abstract |
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| Abstract: 0.030 W, VGS = 4.5 V (Typ) Miniature SO-8 Surface Mount Package Saves Board Space Diode is Characterized for Use in Bridge Circuits Diode Exhibits High Speed, with Soft Recovery VDSS RDS(ON) TYP , (VDS = 15 Vdc, VGS = 10 Vdc, Vdc ID = 5 A) ns ns nC BODY-DRAIN DIODE RATINGS (Note 3) Diode Forward On-Voltage (IS = 1.7 Adc, VGS = 0 V) (IS = 1.7 Adc, VGS = 0 V, TJ = 150°C) Reverse , versus Gate Resistance DRAIN-TO-SOURCE DIODE CHARACTERISTICS high di/dts. The diode's negative di/dt ... | Original |
8 pages, |
NTMD6N03R2 AN569 e6n03 NTMD6N03R2 abstract |
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| Abstract: (Typ) Miniature SO-8 Surface Mount Package - Saves Board Space Diode is Characterized for Use in Bridge Circuits Diode Exhibits High Speed, with Soft Recovery Pb-Free Package is Available 48 mW @ , Charge (VDS = 10 Vdc, VGS = 10 Vdc, ID = 3.5 A) ns nC BODY-DRAIN DIODE RATINGS (Note 2) Diode Forward On-Voltage (IS = 2 Adc, VGS = 0 V) (IS = 2 Adc, VGS = 0 V, TJ = 150°C) Reverse , Switching Time Variation versus Gate Resistance DRAIN-TO-SOURCE DIODE CHARACTERISTICS high di/dts. The ... | Original |
8 pages, |
NTMD4N03R2G NTMD4N03R2 AN569 e4n03 NTMD4N03R2 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| , and SN75108 SN75108 SN75108 SN75108, but offer diode-clamped strobe inputs to simplify circuit design. The essential difference between the A and B versions can be seen in the schematics. Input-protection diodes are in series with the collectors of the differential-input transistors of the B versions. These diodes are useful in Diode-Protected Input for Power-Off Condition To view the following documents, Acrobat Reader www.datasheetarchive.com/files/texas-instruments/data/wwwti~1.com/sc/docs/products/analog/sn7510~1.htm |
Texas Instruments | 28/01/2000 | 14.33 Kb | HTM | sn7510~1.htm |
| ! SIEMENS Discrete & RF Semiconductors ! BAR64-02W BAR64-02W BAR64-02W BAR64-02W ! Si PIN Diode in SCD-80 SCD-80 SCD-80 SCD-80 ! IF = 1.5 mA ! S-Parameters: September 1997 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.050 0.73891 -179.0 0.100 0.74527 179.9 0.150 0.74749 179.2 0.200 0.74894 178.4 0.250 0.74969 177.8 0.300 0.75097 177.1 0.400 0.75124 175 .2 0.900 0.75186 170.0 1.000 0.75101 168.9 1.100 0.75169 167.8 1.200 0.75158 166 www.datasheetarchive.com/download/94424378-145182ZC/bar64_~1.zip (PMV001M5.S1P) |
Infineon | 08/09/2000 | 28.42 Kb | ZIP | bar64_~1.zip |
| ! SIEMENS Discrete & RF Semiconductors ! BAR64-02W BAR64-02W BAR64-02W BAR64-02W ! Si PIN Diode in SCD-80 SCD-80 SCD-80 SCD-80 ! IF = 1.5 mA ! S-Parameters: September 1997 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.050 0.73891 -179.0 0.100 0.74527 179.9 0.150 0.74749 179.2 0.200 0.74894 178.4 0.250 0.74969 177.8 0.300 0.75097 177.1 0.400 0.75124 175 .2 0.900 0.75186 170.0 1.000 0.75101 168.9 1.100 0.75169 167.8 1.200 0.75158 166 www.datasheetarchive.com/files/infineon/ehdata/spar/bar64_2w/pmv001m5.s1p |
Infineon | 22/09/1997 | 1.13 Kb | S1P | pmv001m5.s1p |
| 100301DMQB 100301DMQB 100301DMQB 100301DMQB. 5962-9152801MXA 5962-9152801MXA 5962-9152801MXA 5962-9152801MXA "OR/NOR, TRIPLE 5-IN" A. Product has no date functions and therefore has no Year 2000 compliance issues 100301DMQB 100301DMQB 100301DMQB 100301DMQB. 5962-9152801MXA 5962-9152801MXA 5962-9152801MXA 5962-9152801MXA "OR/NOR, TRIPLE 5-IN" A. Product has no date functions and therefore has no Year 2000 compliance issues 100301DMQB 100301DMQB 100301DMQB 100301DMQB. 5962-9152801MXA 5962-9152801MXA 5962-9152801MXA 5962-9152801MXA "OR/NOR, TRIPLE 5-IN" A. Product has no date functions and therefore has no Year 2000 compliance issues 100301FMQB 100301FMQB 100301FMQB 100301FMQB. 5962-9152801MYA 5962-9152801MYA 5962-9152801MYA 5962-9152801MYA "OR/NOR, TRIPLE 5-IN" A. Product has no date functions and therefore has www.datasheetarchive.com/files/national/other/nsc08873.txt |
National | 18/12/1998 | 1615.16 Kb | TXT | nsc08873.txt |
| Models BFG480W/N/2 BFG480W/N/2 BFG480W/N/2 BFG480W/N/2 model(s) 4V,90mA 4V,80mA 4V,70mA 4V,60mA 4V,50mA 4V,40mA 4V,30mA 4V,20mA 4V,150mA 4V,140mA 4V,140mA 4V,130mA 4V,130mA 4V,120mA 4V,120mA 4V,110mA 4V,110mA www.datasheetarchive.com/files/philips/models/bfg480w_n_2.html |
Philips | 23/04/2003 | 158.12 Kb | HTML | bfg480w_n_2.html |
| Models BFG480W/N/2 BFG480W/N/2 BFG480W/N/2 BFG480W/N/2 model(s) 4V,90mA 4V,80mA 4V,70mA 4V,60mA 4V,50mA 4V,40mA 4V,30mA 4V,20mA 4V,150mA 4V,140mA 4V,140mA 4V,130mA 4V,130mA 4V,120mA 4V,120mA 4V,110mA 4V,110mA www.datasheetarchive.com/files/philips/models/bfg480w_n_2-v1.html |
Philips | 12/05/2005 | 158.2 Kb | HTML | bfg480w_n_2-v1.html |
| Models BFG480W BFG480W BFG480W BFG480W 4V,90mA 2V,40mA 2V,50mA 2V,60mA 2V,70mA 2V,80mA 2V,90mA 3.2V,100mA 3.2V,10mA 3.2V,110mA 3.2V,120mA 2V,10mA 3.2V,130mA 3.2V,140mA 3.2V,150mA 3.2V,20mA 3.2V,30mA 3.2V,4 www.datasheetarchive.com/files/philips/models/bfg480w_3.html |
Philips | 31/12/2001 | 272.18 Kb | HTML | bfg480w_3.html |
| ST | 8-BIT USB MCUS WITH 16K TO 32K ROM/OTP/EPROM, 512 BYTES TO 1K RAM, ADC, DAC (PWM), TIMER, I2C AND SCI - SDIP56 SDIP56 SDIP56 SDIP56, QFP64 QFP64 QFP64 QFP64 ST72671 ST72671 ST72671 ST72671 8-BIT USB MCUS WITH 16K TO 32K ROM/OTP/EPROM, 512 BYTES TO 1K RAM, ADC, DAC (PWM), TIMER, I2C AND SCI - SDIP56 SDIP56 SDIP56 SDIP56, QFP64 QFP64 QFP64 QFP64 Document Number: 5836 Date Update: 07/04/98 Pages: 101 The document is available in the following formats: Portable Document Format and Raw Text Format March 1998 1/101 This is preliminary inform www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5836.htm |
STMicroelectronics | 02/04/1999 | 178.93 Kb | HTM | 5836.htm |
| . - Power clamp data deleted as there is no power-clamp diode www.datasheetarchive.com/download/59203255-917425ZC/scdm002a.zip (sn74tvc3306.ibs) |
Texas Instruments | 07/08/2011 | 35.9 Kb | ZIP | scdm002a.zip |
| . - Power clamp data deleted as there is no power-clamp diode www.datasheetarchive.com/files/texas-instruments/simulation-models/scdm002a.ibs |
Texas Instruments | 07/08/2011 | 183.11 Kb | IBS | scdm002a.ibs |