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HA7-5101/883 Intersil Corporation OP-AMP, 4000uV OFFSET-MAX, 10MHz BAND WIDTH, CDIP8, CERDIP-8
TPS75101QPWPREP Texas Instruments 1.5 V-5V ADJUSTABLE POSITIVE LDO REGULATOR, 0.3V DROPOUT, PDSO20, GREEN, PLASTIC, HTSSOP-20
TPS75101QPWPRQ1 Texas Instruments 1.5 V-5V ADJUSTABLE POSITIVE LDO REGULATOR, PDSO20, PLASTIC, HTSSOP-20
TPS75101QPWPRG4 Texas Instruments 1.5 V-5V ADJUSTABLE POSITIVE LDO REGULATOR, PDSO20, GREEN, PLASTIC, HTSSOP-20
5962-8975101CA Texas Instruments High Speed CMOS Logic Quad Two-Input NOR Gates 14-CDIP -55 to 125
5962-9675101QCA Texas Instruments Dual J-K Flip-Flops With Clear and 3-state Outputs 14-CDIP -55 to 125

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Part : 115267-5101 D Supplier : ITT Industries Manufacturer : Avnet Stock : - Best Price : €3.0704 Price Each : €3.8380
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75101 diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: â'¢ Integrated Suppression Clamp Diode UAA1044 AUTOMOTIVE DIRECTION INDICATOR SILICON MONOLITHIC , conn. ]] 5 Ose PLASTIC PACKAGE CASE 626-04 1 D SUFFIX PLASTIC PACKAGE CASE 751-01 SO-8 Designer , CASE 751-01 SO-8 RgjA = 180°C/W (Typ) -I kl MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.78 5.00 -
OCR Scan
Switch N7 defective hk relay motorola L6 uaa automotive VP Series Relay UAA1044/D EDS0093
Abstract: Temperature Range Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from , Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage , EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD ON Semiconductor
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NTMS4101P NTMS4101PR2 NTMS4101PR2G NTMS4101P/D
Abstract: = 5.0 V, VDS = 16 V, ID = 11.4 A, RG = 2 W 8 4 16 8 ns DRAIN-SOURCE DIODE CHARACTERISTICS (Note 4) Forward Diode Voltage VSD 0.82 0.70 24 VGS = 0 V, dISD/dt = 100 A/ms, IS = 11.4 A 21 3 6 nC ns , PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 ON Semiconductor
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NTMS4503N NTMS4503N/D
Abstract: DRIVE Output drive of oscillator, that drives external diode/capacitor network. The feedback and , ORing Diode Figure 3. Application Circuit for Improved Regulation and Transient Response 0.1 mF , . 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. -X- A 8 5 0.25 (0.010) S B 1 ON Semiconductor
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NIS6201 BAS16LT1 isolated charge pump driver NIS6111 NIS6201/D
Abstract: reference pin. Output drive of oscillator, that drives external diode/capacitor network. MAXIMUM RATINGS , NIS6201 2 3 Figure 2. Application Circuit with Better ORing Diode Figure 3. Application Circuit for , MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS MIN MAX 4.80 ON Semiconductor
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Abstract: Continuous Source Current (Body Diode) IS -6.9 A Lead Temperature for Soldering Purposes (1/8 , DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = -6.9 A Reverse Recovery Time , Resistance 10 10 ms 1 100 ms 1 ms 10 ms 0.01 0.1 0.6 0.65 0.7 Figure 10. Diode , DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. A ON Semiconductor
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P-channel power mosfet SO-8 dd 127 dd 127 d MARKING CODE SO-8 MOSFET SO-8
Abstract: Steady State PD 1.38 W TJ, Tstg -55 to 150 °C Continuous Source Current (Body Diode , Time ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = -6.9 A , 1 ms 10 ms 0.01 0.1 0.6 0.65 0.7 Figure 10. Diode Forward Voltage vs. Current , DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07 ON Semiconductor
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Abstract: MOTOROLA Order this document as UAA1044/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet UAA1044 Automotive direction indicator . designed for use in conjunction with a relay in automotive applications. · Defective Lamp Detection · Overvoltage Protection · Reverse Battery Connection Protection · Integrated Suppression Clamp Diode AUTOMOTIVE DIRECTION INDICATOR SILICON MONOLITHIC INTEGRATED , PLASTIC PACKAGE CASE 751-01 SO-8 L6: dashboard light (3W typical) R1 = 75 k iî Rs = 30 m i î L2, L3 -
OCR Scan
FLASHER RELAY
Abstract: Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy Lead Temperature for , DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD 1.0 V 1A VGS = 0 V V, IS = 2 2.1 Reverse , EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD ON Semiconductor
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NTMS4706N NTMS4706NR2 2500/T NTMS4706N/D
Abstract: Junction and Storage Temperature 9.1 Source Current (Body Diode) Single Pulse Drain-to-Source , 15 V, ID = 1.0 A, RG = 6.0 W tf TBD TBD DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode , EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW ON Semiconductor
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NTMS4916N 4916N NTMS4916NR2G NTMS4916N/D
Abstract: ://onsemi.com 2 LC03-6R2 APPLICATIONS INFORMATION The LC03-6 ON Semiconductor's device is a TVS Diode , -6 device offers high surge rating, low capacitance steering diodes, and a TVS diode integrated in a single , protection circuit. The LC03-6 device provides a unique TVS Diode array designed to protect two I/O data , (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE ON Semiconductor
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T1 PTC LC036 BRD8011/D LC03-6R2/D
Abstract: (OFF) VGS = 4.5 V, VDD = 16 V, ID = 10 A, RG = 2.0 W tf ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Ta Discharge , ) 1.0 Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTMS4503N PACKAGE , . 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. -X- A 8 5 0.25 (0.010) S B 1 ON Semiconductor
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4503N MA2831 NTMS4503NR2
Abstract: Temperature Source Current (Body Diode) 9.9 A 1 7.1 8 PD 0.9 W IDM 48 A , TBD TBD TBD DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time , EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW ON Semiconductor
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NTMS4117N 4117N NTMS4117NR2 NTMS4117N/D
Abstract: INFORMATION The LC03-6 ON Semiconductor's device is a TVS Diode array designed to protect sensitive , capacitance steering diodes, and a TVS diode integrated in a single package (SO-8). In addition, this device , -6 device provides a unique TVS Diode array designed to protect two I/O data lines (single USB port , DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDAARD IS 751-07 ON Semiconductor
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marking LC036
Abstract: Drain tp = 10 ms Operating Junction and Storage Temperature Continuous Source Current (Body Diode , Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 , (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE ON Semiconductor
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NTMS4107N 4107N NTMS4107N/D
Abstract: -55 to 150 °C Continuous Source Current (Body Diode) IS -0.9 A Lead Temperature for , DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage (VGS = 0 V, ISD = -1.7 A) Reverse Recovery Time , . 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. -XA 8 5 0.25 (0.010) S B 1 ON Semiconductor
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NTMD4102PR2 NTMD4102PR2/D
Abstract: Erratic Reset Reset Output Capable of Sinking in Excess of 10 mA Internal Clamp Diode for Discharging , Temperature Range Tstg Clamp Diode Forward Current, Reset to Input Pin (Note 2) Power Dissipation and , Off-State Leakage (Vin, Reset = 5.0 V) IOH - 0.02 0.5 mA Clamp Diode Forward Voltage , (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE ON Semiconductor
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MC34064 MC33064 NCV33064 MC34064P-5G MC34064DM MC33064P MC34064P-005 MC34064/D
Abstract: The LC03-6 ON Semiconductor's device is a TVS Diode array designed to protect sensitive electronics , capacitance steering diodes, and a TVS diode integrated in a single package (SO-8). In addition, this device , -6 device provides a unique TVS Diode array designed to protect two I/O data lines (single USB port , DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDAARD IS 751-07 ON Semiconductor
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eft protection
Abstract: Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy Lead Temperature for , DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD 1.0 V 3A VGS = 0 V V, IS = 2 2.3 Reverse , EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD ON Semiconductor
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NTMS4704N NTMS4704NR2 NTMS4704N/D
Abstract: Storage Temperature Source Current (Body Diode) 9.1 A 1 6.6 8 PD 0.9 W IDM , = 1.0 A, RG = 6.0 W tf 30.4 37.6 26.7 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode , 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ON Semiconductor
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NTMS4118N 4118N NTMS4118NR2 NTMS4118N/D
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