74LVC86A 74LVC32AM 74LVC32AMTR 74LVC32ATTR SO-14 P013G TSSOP14

LOW VOLTAGE CMOS QUAD EXCLUSIVE OR GATE ADVANCED PERFORMANCE PRELIMINARY DATA s s s s s s s s s s 5V TOLERANT INPUTS HIGH SPEED:

74LVC86A 74LVC86A LOW VOLTAGE CMOS QUAD EXCLUSIVE OR GATE ADVANCED PERFORMANCE PRELIMINARY DATA s s s s s s s s s s 5V TOLERANT INPUTS HIGH SPEED: tPD = 4.2ns (MAX.) at VCC = 3V POWER DOWN PROTECTION ON INPUTS AND OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 24mA (MIN) at VCC = 3V PCI BUS LEVELS GUARANTEED AT 24 mA BALANCED PROPAGATION DELAYS: tPLH tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 1.65V to 3.6V (1.2V Data Retention) PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 86 LATCH-UP PERFORMANCE EXCEEDS 500mA (JESD 17) ESD PERFORMANCE: HBM > 2000V (MIL STD 883 method 3015); MM > 200V DESCRIPTION The 74LVC86A 74LVC86A is a low voltage CMOS QUAD EXCLUSIVE OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. It is ideal for 1.65 to 3.6 SOP TSSOP ORDER CODES PACKAGE TUBE T&R SOP TSSOP 74LVC32AM 74LVC32AM 74LVC32AMTR 74LVC32AMTR 74LVC32ATTR 74LVC32ATTR VCC operations and low power and low noise applications. It can be interfaced to 5V signal environment for inputs in mixed 3.3/5V system. It has more speed performance at 3.3V than 5V AC/ACT family, combined with a lower power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS November 2000 1/8 This is preliminary information on a new product now in development are or undergoing evaluation. Details subject to change without notice. 74LVC86A 74LVC86A INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 1A to 4A 1B to 4B 1Y to 4Y GND V CC TRUTH TABLE 14 NAME QND FUNCTION Data Inputs Data Inputs Data Outputs Ground (0V) A B Y L L H H L H L H L H H L Positive Supply Voltage ABSOLUTE MAXIMUM RATINGS Symbol V CC Parameter Supply Voltage Value Unit -0.5 to +7.0 V VI DC Input Voltage -0.5 to +7.0 V VO DC Output Voltage (V CC = 0V) -0.5 to +7.0 V VO DC Output Voltage (High or Low State) (note 1) IIK DC Input Diode Current IOK IO -0.5 to VCC + 0.5 V - 50 mA DC Output Diode Current (note 2) - 50 mA DC Output Current ± 50 mA ICC or IGND DC VCC or Ground Current per Supply Pin Tstg Storage Temperature TL Lead Temperature (10 sec) ± 100 mA -65 to +150 °C 300 °C Absolute Maximum Rating are those value beyond which damage to the device may occour. Functional operation under these condition is not implied 1) IO absolute maximum rating must be observed 2) VO < GND, VO > V CC 2/8 74LVC86A 74LVC86A RECOMMENDED OPERATING CONDITIONS Symbol V CC Parameter Value 1.65 to 3.6 Supply Voltage (note 1) Unit V VI Input Voltage 0 to 5.5 V VO Output Voltage (V CC = 0V) 0 to 5.5 V VO Output Voltage (High or Low State) IOH, IOL IOH, IOL IOH, IOL IOH, IOL Top dt/dv 0 to VCC V High or Low Level Output Current (V CC = 3.0 to 3.6V) High or Low Level Output Current (V CC = 2.7 to 3.0V) ± 24 mA ± 12 mA High or Low Level Output Current (V CC = 2.3 to 2.7V) High or Low Level Output Current (V CC = 1.65 to 2.3V) ±8 mA ±4 mA -40 to 85 °C 0 to 10 Operating Temperqture ns/V Input Rise and Fall Time (note 2) 1) Truth Table guaranteed: 1.2V to 3.6V 2) VIN from 0.8V to 2V at VCC = 3.0V DC SPECIFICATION Test Condition Symbol VIH Parameter High Level Input Voltage Value -40 to 85 °C VCC (V) Min. Max. 0.65V CC 2.3 to 2.7 2.7 to 3.6 1.7 2 V 1.65 to 1.95 0.35V CC 2.3 to 2.7 2.7 to 3.6 VIL Low Level Input Voltage 1.65 to 1.95 Unit 0.7 0.8 V Quiescent Supply Current ICC ICC incr. per Input 2.4 IO=-24 mA 2.2 1.65 to 3.6 IO=100 µA 0.2 IO=4 mA 0.45 IO=8 mA 0.7 IO=12 mA 0.4 3.0 ICC IO=-18 mA 2.7 Power Off Leakage Current 2.2 2.3 Ioff IO=-12 mA 1.65 Input Leakage Current 1.7 3.0 II 1.2 3.0 Low Level Output Voltage IO=-4 mA IO=-8 mA 2.7 VOL VCC-0.2 2.3 High Level Ouput Voltage IO=-100 µA 1.65 V OH IO=24 mA 0.55 3.6 VI = 0 to 5.5V ±5 µA 0 VI or VO = 5.5V VI = VCC or GND 100 µA VI or VO = 3.6 to 5.5V ± 10 V IH = VCC-0.6V 500 1.65 to 3.6 3.6 2.7 to 3.6 V 10 V µA µA 3/8 74LVC86A 74LVC86A DYNAMIC SWITCHING CHARACTERISTICS Test Condition Symbol VOLP V OLV Parameter Dynamic Low Level Quiet Output (note 1) Value TA = 25 °C VCC (V) Min. Typ. Max. 0.8 CL = 50pF VIL = 0V, V IH = 3.3V 3.3 Unit V -0.8 1) Number of output defined as "n". Measured with "n-1" outputs switching from HIGH to LOW or LOW to HIGH. The remaining outputs is measured in the LOW state. AC ELECTRICAL CHARACTERISTICS Test Condition Symbol tPLH t PHL tOSLH tOSHL Parameter Propagation Delay Time Output To Output Skew Time (note1, 2) Value VCC (V) CL (pF) RL () ts = tr (ns) 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 2.7 to 3.6 30 30 50 50 1000 500 500 500 2.0 2.0 2.5 2.5 -40 to 85 °C Min. Unit Max. 8.9 5.9 4.8 4.2 1 1 ns ns 1) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switching in the same direction, either HIGH or LOW (tOSLH = | tPLHm - tPLHn|, tOSHL = | tPHLm - tPHLn| 2) Parameter guaranteed by design CAPACITANCE CHARACTERISTICS Test Condition Symbol Parameter CIN Power Dissipation Capacitance (note 1) TA = 25 °C VCC (V) Min. Input Capacitance CPD Value Typ. Unit Max. 4 1.8 2.5 3.3 fIN = 10MHz pF 32 33 37 pF 1) CPD is defined as the value of the IC's internal equivqlent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average current cqn be obtqined by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/n (per circuit) 4/8 74LVC86A 74LVC86A TEST CIRCUIT R T = ZOUT of pulse generator (typically 50) TEST CIRCUIT AND WAVEFORM SYMBOL VALUE VCC Symbol 1.65 to 1.95V 2.3 to 2.7V 2.7V 3.0 to 3.6V CL 30pF 30pF 50pF 50pF RL 1000 500 500 500 V IH VCC VCC 2.7V 2.7V VM VCC/2 VCC/2 1.5V 1.5V tr = tr