NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: N AUER PHILIPS/DISCRETE blE D m bb53^31i ODSTböl 13Ã- HAPX BF421 BF421 BF423 BF423 I SILICON EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO-92 envelope primarily intended for class-B video output stages in colour television and professional monitor equipment. N-P-N complements are BF420 BF420 and BF422 BF422. QUICK REFERENCE DATA Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction , IAPX 7Z 7 7436 Fig. 2 Thermal impedance from junction to ambient versus pulse duration. Maximum lead ... | OCR Scan |
5 pages, |
BF423 BF422 BF420 BF421 IC 7436 BF421 abstract |
|
|||
| Abstract: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4570 2SC4570 , isc Silicon NPN RF Transistor 2SC4570 2SC4570 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise , Semiconductor isc Silicon NPN RF Transistor isc Websitewww.iscsemi.cn isc RF Product Specification 2SC4570 2SC4570 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor , Silicon NPN RF Transistor 2SC4570 2SC4570 VCE = 5 V, IC = 3 mA, ZO = 50 S21 S11 Freque. S12 ... | Original |
9 pages, |
ZO 607 MA 491 marking transistor 530 279 NPN transistor mhz s-parameter RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN 2SC4570 TRANSISTOR S 812 TRANSISTOR S 838 transistor zo 607 2SC4570 abstract |
|
|||
| Abstract: TOSHIBA 2SC5497 2SC5497 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 4 9 7 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.4dB (f=2GHz) • High Gain : Ga = 14dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 8 V Collector-Emitter Voltage VCEO 4.5 V Emitter-Base Voltage Vebo 1.5 V Collector Current ic 15 , 0.081 40.6 0.582 -57.1 1100 0.548 -102.2 7.436 106.7 0.084 40.8 0.547 -60.4 1200 0.519 -107.2 7.068 ... | OCR Scan |
6 pages, |
NF 841 2SC5497 2SC5497 abstract |
|
|||
| Abstract: BFQ81 BFQ81 Silicon NPN Planer RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 2 3 94 9280 Marking: RA Plastic case (SOT 23) 1 = Collector; 2 = Base; 3 = Emitter Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base , 0.123 0.148 0.166 0.184 0.211 0.239 0.257 S22 ANG deg 68.66 70,64 73.69 74.84 74.36 ... | Original |
8 pages, |
BFQ81 temic 0675 telefunken ra 100 BFQ81 abstract |
|
|||
| Abstract: BFQ 81 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 2 3 94 9280 Marking: RA Plastic case (SOT 23) 1 = Collector; 2 = Base; 3 = Emitter Absolute Maximum Ratings Parameters Collector-base voltage , 0.2798 0.2952 68.66 70,64 73.69 74.84 74.36 73.34 71.71 70.16 68.50 66.99 64.48 61.81 ... | Original |
8 pages, |
temic 0675 telefunken ra 100 Telefunken 2360 datasheet abstract |
|
|||
| Abstract: No. N 7 6 0 6 CPH3004 CPH3004 N CPH3004 CPH3004 NPN fT fT=8.5GHz typ VCE=3V C=100mA I 600mW max Absolute Maximum Ratings / Ta=25 VCBO 9 VCEO 6 VEBO 2 IC 100 PC (250mm2 Ã- 0.8mm) 600 Tj 150 Tstg - 55 150 Electrical Characteristics / Ta=25 ICBO IEBO hFE fT1 fT2 Cob Cre S21e21 S21e22 NF min VCB=5V, IE=0 VEB=1V , 0.673 -71.32 1400 0.513 -175.26 1.087 47.22 0.221 25.24 0.702 -74.36 ... | Original |
7 pages, |
TA-100471 IC 9715 ic 8705 CPH3004 ta 8659 n ic 9209 CPH3004 abstract |
|
|||
| Abstract: Silicon Transistor 2SC4570 2SC4570 NPN UHFOSC/MIX 2SC4570UHF 2SC4570UHF TVMIXER : mm +0.1 2.1�1 0.3 � , 137.8 133.9 130.8 127.5 8.523 8.074 7.436 6.691 5.987 5.261 4.707 4.239 3.852 3.526 ... | Original |
10 pages, |
2SC4570 datasheet abstract |
|
|||
| Abstract: Ordering number : ENN7606 ENN7606 CPH3004 CPH3004 NPN Epitaxial Planar Silicon Transistor CPH3004 CPH3004 High-Frequency Medium-Power Amplifier Applications · · High gain-bandwidth product unit : mm : fT=8.5GHz typ (VCE=3V). 2152A High current : (IC=100mA). Ultrasmall-sized package permitting applied sets to be made small and slim. Large collector dissipation (600mW max). [CPH3004 CPH3004] 2.9 0.15 , 47.22 0.221 25.24 0.702 -74.36 1600 0.500 170.66 0.985 39.19 0.226 ... | Original |
7 pages, |
CPH3004 CRE 6203 ENN7606 ENN7606 abstract |
|
|||
| Abstract: BFQ81 BFQ81 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 13 581Â2 94 9280 2 3 BFQ81 BFQ81 Marking: RA Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = , 74.84 74.36 73.34 71.71 70.16. 68.50 66.99 64.48 61.81 59.61 76.6 58.4 50.3 48.8 50.9 ... | Original |
10 pages, |
BFQ81 BFQ81 abstract |
|
|||
| Abstract: BFQ81 BFQ81 Silicon NPN Planer RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 13 581 94 9280 2 3 Marking: RA Plastic case (SOT 23) 1 = Collector; 2 = Base; 3 = Emitter Absolute Maximum Ratings , 74.36 73.34 71.71 70.16 68.50 66.99 64.48 61.81 59.61 76.6 58.4 50.3 48.8 50.9 54.6 60.8 ... | Original |
10 pages, |
BFQ81 BFQ81 abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| ! SIEMENS Small Signal Semiconductors ! BFY450 BFY450 BFY450 BFY450 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1.75 V IC = 30 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG .7 0.4650 -179.3 1.800 0.7411 164.1 3.700 62.8 0.0666 49.6 0.4655 179.1 1.900 0.7436 162.6 3.506 61.0 0.0698 49.4 0.4692 177.5 2.000 0.7436 161.3 3.311 59.5 0.0727 49 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy450/cy1v730m.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | cy1v730m.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFY450 BFY450 BFY450 BFY450 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1.75 V IC = 30 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG .7 0.4650 -179.3 1.800 0.7411 164.1 3.700 62.8 0.0666 49.6 0.4655 179.1 1.900 0.7436 162.6 3.506 61.0 0.0698 49.4 0.4692 177.5 2.000 0.7436 161.3 3.311 59.5 0.0727 49 www.datasheetarchive.com/download/66784769-145423ZC/bfy450.zip (CY1V730M.S2P) |
Infineon | 08/09/2000 | 434.39 Kb | ZIP | bfy450.zip |
| ! SIEMENS Discrete & RF Semiconductors ! BFP450 BFP450 BFP450 BFP450 ! Si NPN RF SIEGET Grounded Emitter Transistor in SOT343 ! VCE = 1.5 V IC = 5 mA ! Common Emitter S-Parameters: February 1998 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG .7433 -142.9 5.989 93.7 0.0875 20.0 0.4740 -94.9 0.800 0.7436 -150.2 5.292 88.4 0.0888 17.3 0.4456 -102.3 0.900 0.7436 -155.6 4.737 84.1 0.0892 14.9 0.4156 -108.6 1.000 0 www.datasheetarchive.com/download/82720154-145369ZC/bfp450.zip (3P1V55M0.S2P) |
Infineon | 08/09/2000 | 263.79 Kb | ZIP | bfp450.zip |
| ! SIEMENS Discrete & RF Semiconductors ! BFP450 BFP450 BFP450 BFP450 ! Si NPN RF SIEGET Grounded Emitter Transistor in SOT343 ! VCE = 1.5 V IC = 5 mA ! Common Emitter S-Parameters: February 1998 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG .7433 -142.9 5.989 93.7 0.0875 20.0 0.4740 -94.9 0.800 0.7436 -150.2 5.292 88.4 0.0888 17.3 0.4456 -102.3 0.900 0.7436 -155.6 4.737 84.1 0.0892 14.9 0.4156 -108.6 1.000 0 www.datasheetarchive.com/files/infineon/ehdata/spar/bfp450/3p1v55m0.s2p |
Infineon | 23/09/1998 | 3.07 Kb | S2P | 3p1v55m0.s2p |
| ! SIEMENS Discrete & RF Semiconductors ! BFP450 BFP450 BFP450 BFP450 ! Si NPN RF SIEGET Grounded Emitter Transistor in SOT343 ! VCE = 1.5 V IC = 5 mA ! Common Emitter S-Parameters: February 1998 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG .7433 -142.9 5.989 93.7 0.0875 20.0 0.4740 -94.9 0.800 0.7436 -150.2 5.292 88.4 0.0888 17.3 0.4456 -102.3 0.900 0.7436 -155.6 4.737 84.1 0.0892 14.9 0.4156 -108.6 1.000 0 www.datasheetarchive.com/download/92362463-777319ZC/bfp450.zip (3P1V55M0.S2P) |
Spice Models | 29/07/2012 | 264.08 Kb | ZIP | bfp450.zip |
| ! SIEMENS Small Signal Semiconductors ! BFY450 BFY450 BFY450 BFY450 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1.75 V IC = 30 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG .7 0.4650 -179.3 1.800 0.7411 164.1 3.700 62.8 0.0666 49.6 0.4655 179.1 1.900 0.7436 162.6 3.506 61.0 0.0698 49.4 0.4692 177.5 2.000 0.7436 161.3 3.311 59.5 0.0727 49 www.datasheetarchive.com/download/82445031-777200ZC/bfy450.zip (CY1V730M.S2P) |
Spice Models | 29/07/2012 | 434.39 Kb | ZIP | bfy450.zip |
| ! SIEMENS Small Signal Semiconductors ! BFQ19S BFQ19S BFQ19S BFQ19S ! Si NPN RF Bipolar Junction Transistor in SOT89 ! VCE = 2.5 V IC = 10 mA ! Common Emitter S-Parameters: March 1991 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.050 0.6006 -66.8 21.677 141.1 0.0319 62.6 0.7965 -35.9 0.060 0.5896 -77.0 20.229 135.7 0.0359 59.4 0.7436 -40.9 0.070 0.5770 -86.5 18 www.datasheetarchive.com/files/siemens/ehdata/spar/bfq19s/qh2v510m-v1.s2p |
Siemens | 09/08/1994 | 1.89 Kb | S2P | qh2v510m-v1.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFQ19S BFQ19S BFQ19S BFQ19S ! Si NPN RF Bipolar Junction Transistor in SOT89 ! VCE = 5 V IC = 10 mA ! Common Emitter S-Parameters: March 1991 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.050 0.6134 -57.9 22.462 144.4 0.0261 66.0 0 .882 134.5 0.0326 60.4 0.7436 -35.2 0.080 0.5623 -84.1 18.649 130.1 0.0352 58.2 0.7011 -38 www.datasheetarchive.com/files/siemens/ehdata/spar/bfq19s/qh5v010m-v1.s2p |
Siemens | 09/08/1994 | 1.89 Kb | S2P | qh5v010m-v1.s2p |
| ! SIEMENS Small Signal Semiconductors ! BF799 BF799 BF799 BF799 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 5 V IC = 25 mA ! Common Emitter S-Parameters: November 1990 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.050 0.5724 -121.5 22.420 117.6 0.0121 52.1 0 .5 0.1533 90.6 0.6452 -47.4 1.600 0.7436 139.5 0.769 26.8 0.1698 90.5 0.6477 -50.8 1 www.datasheetarchive.com/files/siemens/ehdata/spar/bf799/rt5v025m-v1.s2p |
Siemens | 08/08/1994 | 1.89 Kb | S2P | rt5v025m-v1.s2p |
| # GHz S MA R 50 ! 13 Feb 1991 / 15:12:05 !BFP182 BFP182 BFP182 BFP182, Si-NPN RF-Transistor in SOT143 ! VCE= 8.00V, IC= 15.00mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .100 .68038 -39.0 28.6726 156.3 .01281 72.1 .91489 -16.0 .150 .64984 -56.1 26.4357 146 .9 .35404 -44.8 1.600 .50951 165.6 4.7436 68.3 .06073 48.4 .34997 -45.8 1.800 .52309 158 www.datasheetarchive.com/files/siemens/ehdata/spar/bfp182/p48v015m.s2p |
Siemens | 02/07/1992 | 2.36 Kb | S2P | p48v015m.s2p |