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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

722 smd transistor

Catalog Datasheet MFG & Type PDF Document Tags

SMD TRANSISTOR MARKING 76

Abstract: smd transistor marking 54 .47 (Leaded devices to SMD) Technical information 1 Type Designation in Accordance with Pro Electron. 53 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 8 9 9.1 9.2 9.3 10 11 Notation of the Symbols and Terms Used (DIN , .65 Basic Transistor Configurations , . 70 RF and AF Transistors and Diodes in SMD Packages , . 1885 Package Outlines of Transistor Packages
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722 smd transistor

Abstract: FMMT722 Transistors IC SMD Type Switching Transistor FMMT722 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 625mW power dissipation. 1 Excellent hfe characteristics up to 10A (pulsed). 0.55 IC up to 10A peak pulse current. +0.1 1.3-0.1 +0.1 2.4-0.1 IC CONT 2.5A , Transistors IC SMD Type FMMT722 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons , * Pulse test: tp 300ìs; d Marking Marking 2 722 www.kexin.com.cn 0.02. 20 pF
Kexin
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722 smd transistor transistor smd marking 94 transistor smd br TRANSISTOR SMD 1a 9 100MH

30RF35

Abstract: VJ1206Y104KXB -135; BLF6G27LS-135 WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 , BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 01 - 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base , frequency range NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 2 , BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics
NXP Semiconductors
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30RF35 VJ1206Y104KXB smd transistor equivalent table ACPR885 ACPR1980 IS-95 2002/95/EC
Abstract: 1998-11-01 SIEMENS TLE 4275 P-T0263-5-1 (SMD) (Plastic Transistor Single Outline) All metal , ) Package â¼ TLE 4275 D Q67006-A9354 P-T0252-5-1 (SMD) â¼ TLE 4275 G Q67006-A9343 P-T0263-5-1 (SMD) â¼ TLE 4275 P-T0220-5-11 Q67000-A9342 â¼ New type Functional Description The , and drives the base of the series transistor via a buffer. Saturation control as a function of the , P-T0263-5-1 (SMD) li U I RQ I I D GND Q IEP02527 GND RQ Q D IEP02528 -
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AED01937

C5750X7R1H106M

Abstract: 30RF35 LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 , BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 - 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base , (RoHS) BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 1.3 , -100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 5. Thermal characteristics Table 5
NXP Semiconductors
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C5750X7R1H106M 6G38LS-100

722 smd transistor

Abstract: N-channel mos sot23 MOS transistor in a SOT23 SMD package. QUICK REFERENCE DATA SYMBOL VDs V sD PARAMETERS , Philips Semiconductors Product specification N-channel enhancement mode MOS transistor , enhancement mode . . . . MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating , Philips Semiconductors Product specification N-channel enhancement mode MOS transistor THERMAL , BSH1Q1 MOS
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N-channel mos sot23 BSH101 SNW-EQ-608 SNW-FQ-302A SNW-FQ-302B

transistor BV-1 501

Abstract: smd 501 transistor BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 01 - 12 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station , -50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor I Compliant to Directive 2002/95/EC , transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter , Semiconductors WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description Frame
NXP Semiconductors
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transistor BV-1 501 smd 501 transistor RF35

BLF6G38S-25

Abstract: transistor equivalent table BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 - 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , -25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = , -25 WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5
NXP Semiconductors
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transistor equivalent table

smd transistor 3400

Abstract: J412 - TRANSISTOR SMD LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 - 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise
NXP Semiconductors
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smd transistor 3400 J412 - TRANSISTOR SMD cdma QPSK modulation Walsh pilot C4532X7R1H475M

TRANSISTOR j412

Abstract: BLF6G38S-25 Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 7.2.2 Graphs 001aah594 001aah595 , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 , 14 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 6
NXP Semiconductors
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TRANSISTOR j412

transistor K 1352

Abstract: C5750X7R1H106M BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 - 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station , Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless , transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5 ms; bandwidth = 10 MHz
NXP Semiconductors
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transistor K 1352 TRANSISTOR K 135
Abstract: Diodes SMD Type PowerMOS transistor Logic level TOPFET SMBJ5V0(C)A - SMBJ170(C)A â  Features ● Glass passivated junction. DO-214AA(SMB) ● 600W Peak Pulse Power capability on , SMD Type SMBJ5V0(C)A - SMBJ170(C)A â  Electrical Characteristics Ta = 25â"ƒ Uni-directional , 7.37 10 10.3 58.3 800 SMBJ6V5(C)A 6.5 7.22 7.98 10 11.2 53.6 500 , 66.7 73.7 1 96.8 6.2 5 www.kexin.com.cn Diodes SMD Type KMBJ5V0(C)A - KMBJ170 Kexin
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SMBJ58 SMBJ60 SMBJ64 SMBJ70 SMBJ75 SMBJ78

smd transistor p3

Abstract: STTA2006M OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. â  HIGH FREQUENCY OPERATIONS. â , , non isolated SMD with copper tab DESCRIPTION The TURBOSWITCH is a very high performance series of , companion transistor, thus optimizing the overall performance in the end application. The way of , -2) (Fig. 2) ON : P4 Watts (Fig. 3) (Fig. 3 & 4) SWITCHING TRANSISTOR Fig. 1 : "FREEWHEEL" MODE. â , VR.IR.(1 -8) Turn-on losses: (in the transistor, due to the diode) r Vr x Irm2 x ( 3 + 2 x S) x F 6
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STTA2006M smd transistor p3 PSO-10 SO-10

907 TRANSISTOR smd

Abstract: smd transistor 547 PMILIPsTbÌSCRETÌ b7E D PNP 5 GHz wideband transistor g BFQ149 DESCRIPTION PNP transistor in a SOT89 envelope , microwave amplifiers such as radar systems, spectrum analyzers, etc., using SMD technology. PINNING PIN , specification -N AHER PHILIPS/DISCRETE b7E D- PNP 5 GHz wideband transistor BFQ149 THERMAL RESISTANCE SYMBOL , «¡rifirifiratinn -N AMER PHILIPS/DISCRETE b7E D-P PNP 5 GHz wideband transistor BFQ149 Cc (pF , > PNP 5 GHz wideband transistor BFQ149 Table 1 Common emitter scattering parameters, lc = -70 mA; VCE =
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907 TRANSISTOR smd smd transistor 547 smd transistor code 314 703 TRANSISTOR smd TRANSISTOR SMd jg data T3D 97 MSB013 500MH
Abstract: 0035104 TT 4 W A P X N A*ER PlJILIPS/DISCRETE PNP 5 GHz wideband transistor b?E D , transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial , ., using SMD technology. PIN DESCRIPTION Code: FG 1 emitter 2 base 3 collector , wideband transistor BFQ149 THERMAL RESISTANCE PARAMETER SYMBOL F j-» *tt> thermal , - PNP 5 GHz wideband transistor BFQ149 MEA328 Cc (p > F 3 2 1 0 10 -V -
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Abstract: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 â'" 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base , -100 NXP Semiconductors WiMAX power LDMOS transistor 1.3 Applications  RF power amplifiers for , of 13 BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 5 , transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5 ms; bandwidth = 10 MHz NXP Semiconductors
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Abstract: -100; BLF6G38LS-100 WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 , BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 - 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station , -100; BLF6G38LS-100 WiMAX power LDMOS transistor 1.3 Applications RF power amplifiers for base stations and , BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor 5. Thermal characteristics Table 5. Symbol NXP Semiconductors
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Abstract: LDMOS transistor 7.2.2 DVB-T 001aao063 001aao064 17 Gp (dB) 16 -5 IMDshldr (dBc) 12 PAR (dB , BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 2 - 16 September 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver , transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 NXP Semiconductors
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6G15LS-500H

SMD transistor package code A64

Abstract: -10G WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 , BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 3 â'" 28 February 2011 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station , Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , reserved. 2 of 15 BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor 5
NXP Semiconductors
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SMD transistor package code A64

J2735

Abstract: DVB-t2 -500H NXP Semiconductors Power LDMOS transistor 7.2.2 DVB-T 001aao063 17 Gp (dB) IMDshldr , -500H Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 7.2.1 7.2.2 , BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 1 - 11 May 2011 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver
NXP Semiconductors
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J2735 DVB-t2 GP414 transistor smd 723 ATC800B JESD625-A
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