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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

71/b 595 transistor

Catalog Datasheet MFG & Type PDF Document Tags

NPN TRANSISTOR Z4

Abstract: b 595 transistor . Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Radar Pulsed Power Transistor, PH3134-65M 65W v2.00 RF Test Fixture GROUND 3 pucEs, /=-=-I i, B;i"^ J/y ,] PC BOARDS , Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 (16.51)- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C , .3 3.25 I 11.2-j11.7 7.1 - j4.3 3.40 I 12.7-j7.6 1 6.4-j3.3 ( Specifications
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NPN TRANSISTOR Z4 b 595 transistor transistor z4 n transistor ZY transistor b 595 572i EV-15

2N6665

Abstract: MA42001-509 America: Tel. (800) 366-2266 â  Asia/Pacific: Tel. +81(03)3226-1671 â  Europe: Tel. +44 (1344)869 595 , America: Tel. (800) 366-2266 â  Asia/Pacific: Tel. +81 (03)3226-1671 â  Europe: Tel. +44 (1344)869 595 , (03) 3226-1451 _ 8-69 Europe: Tel. +44(1344)869 595 Fax +44(1344)300 020 SbMEEOS OOOl?1^ S2T , MA42161 is a low noise silicon planar epitaxial transistor for 0.5 to 2.0 GHz amplifiers. These , : Tel. (800) 366-2266 â  Asia/Pacific: Tel. +81(03)3226-1671 â  Europe: Tel. +44(1344)869 595 Fax (800
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MA42001 MA42021 2N6665 MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ MA42111 MA42141 MA42151 MA42051
Abstract: 1 KM IMS C l«M 0 M9 C.ft ua c r U6 LM M s 1» H m Utt J Ul w IM7 K *9> 1 B 4 S L N N MO «I N U I «98 .m 488 MS .7 0 0 .7 7 1 J W jn U S JO jm M B m IN m ja 4» 490 itt 4M ill 4M ¿71 4J7 , M fa oe m m an A M P com pany RF MOSFET Power Transistor, 150W, 28V 100 - 500 MHz UF28150J V2.00 Features · N -Channel E n han cem en t M ode D evice · DM OS Structure · I,ow er C ap acitan ces for B , +81 (03) 3226-1451 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 North America: RF -
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TRANSISTOR b 772 p

Abstract: transistor sb 772 : Tel. + 4 4 (1 3 4 4 )8 6 9 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 1W, 28V , 9 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 1W, 28V UF2801KI V2.00 Typical , yM A fMe e o ii P m an co m p a n y RF MOSFET Power Transistor, 1W, 28V 100-500 MHz Features , MN MX MN DOCS TJ ^ " s T G 0J C mx 362 328 1.730 1.300 .019 ¿0 3 .034 .045 A B C D E F 9.07 eas 19.03 12.70 .41 4.95 .71 .74 9J9 6.33 44.43 337 .321 .730 .500 .016 .193 38.10
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TRANSISTOR b 772 p transistor sb 772 d 772 transistor C1413

L930

Abstract: w art A M P c o m p a n y Radar Pulsed Power Transistor, 65W, 100(is Pulse, 10% Duty 3.1-3.4 GHz PH3134-65M Features · NPN Silicon M icrow ave P o w er T ran sisto r · C o m m o n B ase C o n figu ratio n · B ro ad b an d C lass C O peratio n · · · · · H igh E fficien cy In te rd igitated G eo m etry D iffu sed Em itter B allastin g R esistors G o ld M etalization System Intern al Inpu t and O utpu , j1 1.7 11.5 - j9.5 12.7 - ¡7.6 z of(Q) 8.1 - j5.3 7.1 - ¡4.3 6 .4 -¡3 .3 : lü 1 - :x I LNU J
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L930

2N6665-509

Abstract: 2N5054 7 1 Fax +81 (03) 3226-1451 Europe: Tel. Fax 1 + 4 4 (1 3 4 4 )8 6 9 595 + 4 4 (1 3 4 4 )3 0 0 , M/A-COM, Inc. + 4 4 (1 3 4 4 )8 6 9 595 + 4 4 (1 3 4 4 )3 0 0 020 General Purpose Low Noise , Europe: Tel. Fax + 4 4 (1 3 4 4 )8 6 9 595 + 4 4 (1 3 4 4 )3 0 0 020 General Purpose Low Noise , 595 + 4 4 (1 3 4 4 )3 0 0 020 General Purpose Low Noise Bipolar Transistors V3.00 MA42141 , Range = 300 MHz to 2.0 GHz · Geometry = 63 The MA42141 NPN silicon planar transistor features excel lent
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MA42121 MA42181

P77 transistor

Abstract: 1.5 j63 . 869 595 (1344) 300 020 Radar Pulsed Power Transistor, PHI 21400.85L 0.85W v2.00 RF , Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry Diffused Emirter , ) 5.9 - j4.5 1.30 1.40 6.4 - j4.0 7.5 + j7.7 7.1 - j4.4 7.4 + j8.9 I ZIRCUIT , (1344) 869 595 Fax +44 (1344) 300 020 M/A-COM
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ECG5016A P77 transistor 1.5 j63 BZ15 l 9113 40GI- PH1214-

PH1214-12M

Abstract: Radar Radar Pulsed Power Transistor 12 Watts, 1.20-1.40 GHz PH1214-12M PH1214-12M Radar Pulsed Power Transistor - 12 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 1 Features · · · · · · · · Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband , Description M/A-COM's PH1214-12M is a silicon bipolar NPN power transistor intended for use in L-band 1.2 - , power with medium pulse length (150µS) at 10 percent duty cycle. The transistor is housed in a 2
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Radar radar 77 ghz
Abstract: VLU! 7 .4 + j6 .3 7 5 + j7 .7 7 .4 + j 8 . 9 7.1 - ¡ 4 .4 S p e c ific a tio n s S u b je c t to , m ìa M an A M P com pany c o m Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20 , sisto r C o m m o n Km itter C o n figu ratio n B ro ad b an d C lass A O p eratio n M atrix G e o m etry D iffused Km itter B allastin g R esistors ( ¡o ld M etalization System Intern al Inpu t Im p ed , °C Parameter C o lle c to r - E m itte r V o lta g e C o lle c to r - E m itte r V o lta g e E m itte r -B a s -
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PH1214-0

transistor 12W

Abstract: / M Ì K H m an A M P com p a n y Radar Pulsed Power Transistor, 12W, 150ns Pulse, 10% Duty 1 .2 , C o m m o n B ase C o n figu ratio n B ro ad b an d C lass C O p eratio n H igh K fficiency In terd igitated G eo m etry D iffu sed Em itter B allastin g Resistors G o ld M etalization System In tern al Inpu t Im p ed an ce M atching H erm etic M etal/Ceram ic Package : b/a :j4 übO ir 090 > ÜIÜ :i - J b ! * ybü 3 b) 123 C3 Db) Ü9J * 313 1 ¿b) Absolute Maximum Ratings at
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transistor 12W
Abstract: Radar Pulsed Power Transistor, 65W, 100|is Puise, 10% Duty 3.1-3.4 GHz PH3134-65M Features · · · · · · · · N1JN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C onfig u ratio n B ro a d b an d Class C O p e ratio n High Efficiency In terd ig ita te d G eo m etry D iffused E m itter B , to r-E m itte r B re a kd o w n V o ltage C o lle c to r-E m itte r Le a ka g e C u rre n t T h e rm , Loa d M ism atch T o le ra n ce 1c Symbol b v ces ^CES Min 65 - Max Units V lc = 2 5 -
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Abstract: A Æ c û M W an A M P com pany Radar Pulsed Power Transistor, 55W, 300ns Pulse, 10% Duty , C o m m o n B a s e C o n fig u ra tio n · B r o a d b a n d (Mass C O p e r a tio n · H igh K fficien cy In te rd ig ita te d G eo m etry ' · D iffu sed K m itter B a lla stin g R e sisto rs · Ciold M , r-E m itte r B re a kd o w n V o ltage C o lle c to r-E m itte r Le a ka g e C u rre n t The rm a l R , .5 12.7 - j 7.6 z , F -
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PH3134-55L

zo 107 NA P 611

Abstract: TRANSISTOR 2SC 2026 Microwave Transistor UJ? t 0 2 G H z ~ ? , surface ensure very high reliability. The transistor is particularly intended for use in low-noise , resistance Junction to ambient air Vceo Vc e s Vcbo Vebo k Tstg 71 Ptot 20 27 27 1.5 35 - 6 5 t o , 0,686 0,708 0,605 0,611 0,595 0,517 0,587 0,526 0,507 0,516 0,516 0,502 0,509 0,511 0,509 0,500 0
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zo 107 NA P 611 TRANSISTOR 2SC 2026 2sc 643 642p Q62702-F655 BFQ60

PQHR106YA

Abstract: TELEPHONE RINGER ) Figure 2 Source transistor noHfn 71 BA8204, BA8204F Telephone systems: Tone ringer 40 l Oi , o o < 595 k ii, C2 = 0.0022 nF = Fig. 6 ÏH 2 R2 = 595 k il, C2 I0 h = 0.0022 nF , Sink transistor Test circuits IS S I 31 X 4 PQHR106YA Piezoelectric buzzer Figure 4 Ringer , Test sw. 1 3 2 sw 2 1 2 2 k fm fH2 R, = 773 k£l, C, = 0.1 |iF R2 = 595 ki2, C2= 0.0022 nF , OUT 1S S131X 4 BA8204/B A8204F Figure 9 Example of BA8204 or BA8204F application 74 RDNm
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ML8204 TELEPHONE RINGER PQHR BA6564A BA8204/B

7z transistor

Abstract: J401 ,s= 7-z E -= 2= .- = = FE an AMP company * Radar Pulsed Power Transistor, 5OW, loops Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M Features l l l l l l l ,900 (22.85) NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter , Package 1w Absolute Maximum Ratings at 25°C 100 :2 3) EH!TTEQ 71 100 (2.54) -: - , . +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (1344) 869 595 Fax +44 (1344
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7z transistor J401

transistor 1211

Abstract: transistor su 312 DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE , transistor has been applied ultra super mini mold package. FEATURES â'¢ High fT : 5 .5 GHz TYP. (@ V , 1 2 5 10 20 50 Ic - Collector Current - mA V be - B ase to Emitter V oltage - V , . COLLECTOR TO B ASE VO LTAG E MAG - Maximum Available Gain - dB IS2iel" - Insertion Power Gain - dB M
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transistor 1211 transistor su 312 transistor zo 109

PH3134-75S

Abstract: Aflkk fan AMP I an AMP company Radar Pulsed Power Transistor, 75W, 1 \is Pulse, 10% Duty 3.1 - 3.4 GHz PH3134-75S Features â'¢ NPN Silicon Microwave Power Transistor â'¢ Common Base , Fixture Impedances F(GHz) 3.10 11.2-j11.7 8.1 -j5.3 3.25 11.5-j9.5 7.1 -J4.3 3.40 12.7-j7.6 6.4 - j3 ,   Asia/Pacific: Tel. +81 (03) 3226-1671 â  Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020 Radar Pulsed Power Transistor, 75W PH3134-75S V2.00 RF Test
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Infineon technology roadmap for mosfet

Abstract: germanium transistor pnp smd suppliers of Silicon Germanium (SiGe) products. T h i s b r o c h u r e p r o v i d e s an overview of , small-scale AF multichip products. T h e r e h a v e b e e n many technical highlights during this period , . T h e b u s i n e s s s u c c e s s of our Silicon Discretes originates in our ability to vary , : Silicon Discretes Technology Roadmap Leading Edge in Bipolars S i x g e n e r a t i o n s o f b i p o , quantum leap to 25 GHz and 45 GHz (fourth and fifth generations respectively). T h e b a s i c S i b i p
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Infineon technology roadmap for mosfet germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige B191-H7496-G1-X-7600

ha 174 transistor

Abstract: CMA110 microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-m b Rth m b-h Note 1. See "Mounting , Philips Semiconductors Product specification NPN microwave power transistor FEATURES · , amplifiers up to 4.2 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A , performance up to Tm b = 25 °C in a common emitter class-A amplifier. MODE OF OPERATION Class-A (CW) linear f , Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the
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ha 174 transistor CMA110 eb15V LTE42005S GL012

k68 transistor

Abstract: VARISTOR k75 designation, please contact and ask our office. l Transistor, diode, IC, thyristor or triac semiconductor , 100 A (V) 340 395 455 595 650 710 775 845 1025 1120 1240 1290 1355 1500 1650 1815 Rated Power (W) 0.8 , Allowable Voltage Maximum Clamping Voltage V 200 A (V) 340 395 455 595 650 710 775 845 1025 1120 1240 1290 , 91 EK3 C20 31 ERZ EK4 0 2 C 71 ERZ EK4 C20 ERZ 11 5 K 0E ZC2 ER 71 361 EK2 0EK ZC20 ZC2 ER
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ERZC20EK471 ERZC20EK271 ERZC20EK621 ERZC20EK911 k68 transistor VARISTOR k75 ERZ-C32EK821 UL1449 E86821 LR-92226 ZC32EK241 ERZC32EK271 ERZC32EK361
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