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71 CML Innovative Technologies - 65 (Aug 2016) Onlinecomponentscom Buy
71 Keystone Electronics Battery Clip; Low Profile; Spring RivetMount; Steel/Nickel; 1 Cell; 9 Volt 300 from $0.19 (Aug 2016) Allied Electronics Buy
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71 01 200 Knipex Bolt cutter Hard wire, ø: 4 mm Medium-hard wire ø: 5.2 mm Piano wire, ø: 3.6 mm Soft wire, ø: 6.0 mm 53 from €31.54 (Aug 2016) Distrelec Buy
71 01 200 KNIPEX CUTTER, BOLT 2 from $53.7680 (Sep 2016) element14 Asia-Pacific Buy
71 01 200 KNIPEX CUTTER, BOLT 6 from £30.23 (Aug 2016) Farnell element14 Buy
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71 02 200 KNIPEX CUTTER, BOLT, COMPACT, COBOLT; Overall Length:200mm; Cutting Capacity Max:6mm; Product Range:-; SVHC:No SVHC (15-Jun-2015); Length:200mm; Length, Imperial:8"; Medium / Hard Metals Cutting Capacity:5.2; Soft Metal Cutting ;RoHS Compliant: NA 1 from $79.56 (Sep 2016) Newark element14 Buy
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71 02 200 T KNIPEX COMPACT BOLT CUTTER, 200MM 4 from $44.36 (Aug 2016) element14 Asia-Pacific Buy
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71/b 595 transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: . Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Radar Pulsed Power Transistor, PH3134-65M PH3134-65M 65W v2.00 RF Test Fixture GROUND 3 pucEs, /=-=-I i, B;i"^ J/y ,] PC BOARDS , Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 (16.51)- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C , .3 3.25 I 11.2-j11.7 7.1 - j4.3 3.40 I 12.7-j7.6 1 6.4-j3.3 ( Specifications ... M/A-COM
Original
datasheet

2 pages,
145.71 Kb

transistor b 595 PH3134-65M 572i transistor ZY transistor z4 n transistor ZY- b 595 transistor NPN TRANSISTOR Z4 TEXT
datasheet frame
Abstract: America: Tel. (800) 366-2266 ■ Asia/Pacific: Tel. +81(03)3226-1671 ■ Europe: Tel. +44 (1344)869 595 , America: Tel. (800) 366-2266 ■ Asia/Pacific: Tel. +81 (03)3226-1671 ■ Europe: Tel. +44 (1344)869 595 , (03) 3226-1451 _ 8-69 Europe: Tel. +44(1344)869 595 Fax +44(1344)300 020 SbMEEOS OOOl?1^ S2T , MA42161 MA42161 is a low noise silicon planar epitaxial transistor for 0.5 to 2.0 GHz amplifiers. These , : Tel. (800) 366-2266 ■ Asia/Pacific: Tel. +81(03)3226-1671 ■ Europe: Tel. +44(1344)869 595 Fax (800 ... OCR Scan
datasheet

15 pages,
717.01 Kb

MA42121 2N3571 NF Amp NPN Silicon transistor TO-3 MA421B MA42021 2N3880 epitaxial micro-x MA42161 RF TRANSISTOR NPN MICRO-X 2N3953 MA42 ma42 transistor 2N2857 Model MA42001 RF NPN POWER TRANSISTOR C 10-50 GHZ 2n5054 MA42181-510 2N6665-509 MA42001-509 2N6665 TEXT
datasheet frame
Abstract: 1 KM IMS C l«M 0 M9 C.ft ua c r U6 LM M s 1» H m Utt J Ul w IM7 K *9> 1 B 4 S L N N MO «I N U I «98 .m 488 MS .7 0 0 .7 7 1 J W jn U S JO jm M B m IN m ja 4» 490 itt 4M ill 4M ¿71 4J7 , M fa oe m m an A M P com pany RF MOSFET Power Transistor, 150W, 28V 100 - 500 MHz UF28150J UF28150J V2.00 Features · N -Channel E n han cem en t M ode D evice · DM OS Structure · I,ow er C ap acitan ces for B , +81 (03) 3226-1451 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 North America: RF ... OCR Scan
datasheet

3 pages,
79.01 Kb

UF28150J TEXT
datasheet frame
Abstract: : Tel. + 4 4 (1 3 4 4 )8 6 9 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 1W, 28V , 9 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 1W, 28V UF2801KI UF2801KI V2.00 Typical , yM A fMe e o ii P m an co m p a n y RF MOSFET Power Transistor, 1W, 28V 100-500 MHz Features , MN MX MN DOCS TJ ^ " s T G 0J C mx 362 328 1.730 1.300 .019 ¿0 3 .034 .045 A B C D E F 9.07 eas 19.03 12.70 .41 4.95 .71 .74 9J9 6.33 44.43 337 .321 .730 .500 .016 .193 38.10 ... OCR Scan
datasheet

4 pages,
101.14 Kb

d 772 transistor C1413 transistor sb 772 TRANSISTOR b 772 p TEXT
datasheet frame
Abstract: w art A M P c o m p a n y Radar Pulsed Power Transistor, 65W, 100(is Pulse, 10% Duty 3.1-3.4 GHz PH3134-65M PH3134-65M Features · NPN Silicon M icrow ave P o w er T ran sisto r · C o m m o n B ase C o n figu ratio n · B ro ad b an d C lass C O peratio n · · · · · H igh E fficien cy In te rd igitated G eo m etry D iffu sed Em itter B allastin g R esistors G o ld M etalization System Intern al Inpu t and O utpu , j1 1.7 11.5 - j9.5 12.7 - ¡7.6 z of(Q) 8.1 - j5.3 7.1 - ¡4.3 6 .4 -¡3 .3 : lü 1 - :x I LNU J ... OCR Scan
datasheet

2 pages,
55.48 Kb

L930 PH3134-65M TEXT
datasheet frame
Abstract: 7 1 Fax +81 (03) 3226-1451 Europe: Tel. Fax 1 + 4 4 (1 3 4 4 )8 6 9 595 + 4 4 (1 3 4 4 )3 0 0 , M/A-COM, Inc. + 4 4 (1 3 4 4 )8 6 9 595 + 4 4 (1 3 4 4 )3 0 0 020 General Purpose Low Noise , Europe: Tel. Fax + 4 4 (1 3 4 4 )8 6 9 595 + 4 4 (1 3 4 4 )3 0 0 020 General Purpose Low Noise , 595 + 4 4 (1 3 4 4 )3 0 0 020 General Purpose Low Noise Bipolar Transistors V3.00 MA42141 MA42141 , Range = 300 MHz to 2.0 GHz · Geometry = 63 The MA42141 MA42141 NPN silicon planar transistor features excel lent ... OCR Scan
datasheet

15 pages,
404.49 Kb

MA42181-510 2N6665-509 2N5054 TEXT
datasheet frame
Abstract: . 869 595 (1344) 300 020 Radar Pulsed Power Transistor, PHI 21400.85L 0.85W v2.00 RF , Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry Diffused Emirter , ) 5.9 - j4.5 1.30 1.40 6.4 - j4.0 7.5 + j7.7 7.1 - j4.4 7.4 + j8.9 I ZIRCUIT , (1344) 869 595 Fax +44 (1344) 300 020 M/A-COM ... M/A-COM
Original
datasheet

2 pages,
131.02 Kb

J4 81 diode l 9113 ECG5016A BZ15 1.5 j63 .15 j63 P77 transistor TEXT
datasheet frame
Abstract: Radar Pulsed Power Transistor 12 Watts, 1.20-1.40 GHz PH1214-12M PH1214-12M PH1214-12M PH1214-12M Radar Pulsed Power Transistor - 12 Watts, 1.20-1.40 GHz, 150 uS Pulse, 10% Duty 1 Features · · · · · · · · Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband , Description M/A-COM's PH1214-12M PH1214-12M is a silicon bipolar NPN power transistor intended for use in L-band 1.2 - , power with medium pulse length (150uS) at 10 percent duty cycle. The transistor is housed in a 2 ... M/A-COM
Original
datasheet

2 pages,
61.19 Kb

radar 77 ghz Radar PH1214-12M TEXT
datasheet frame
Abstract: VLU! 7 .4 + j6 .3 7 5 + j7 .7 7 .4 + j 8 . 9 7.1 - ¡ 4 .4 S p e c ific a tio n s S u b je c t to , m ìa M an A M P com pany c o m Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20 , sisto r C o m m o n Km itter C o n figu ratio n B ro ad b an d C lass A O p eratio n M atrix G e o m etry D iffused Km itter B allastin g R esistors ( ¡o ld M etalization System Intern al Inpu t Im p ed , °C Parameter C o lle c to r - E m itte r V o lta g e C o lle c to r - E m itte r V o lta g e E m itte r -B a s ... OCR Scan
datasheet

2 pages,
50.78 Kb

TEXT
datasheet frame
Abstract: / M Ì K H m an A M P com p a n y Radar Pulsed Power Transistor, 12W, 150ns Pulse, 10% Duty 1 .2 , C o m m o n B ase C o n figu ratio n B ro ad b an d C lass C O p eratio n H igh K fficiency In terd igitated G eo m etry D iffu sed Em itter B allastin g Resistors G o ld M etalization System In tern al Inpu t Im p ed an ce M atching H erm etic M etal/Ceram ic Package : b/a :j4 übO ir 090 > ÜIÜ :i - J b ! * ybü 3 b) 123 C3 Db) Ü9J * 313 1 ¿b) Absolute Maximum Ratings at ... OCR Scan
datasheet

2 pages,
54.75 Kb

transistor 12W PH1214-12M TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
Bipolar Junction Transistor in SOT23 ! VCE = 2.5 V IC = 3 mA ! Common Emitter S-Parameters 171.4 2.017 63.1 0.1212 49.2 0.4295 -50.3 1.300 0.5495 166.8 1.875 59.5 0.1281 51.3 44.1 0.1743 58.6 0.4044 -66.3 1.900 0.5808 141.9 1.366 40.9 0.1865 59.5 0.3994 -70.2 2.000 0.5843 138.2 1.305 38.4 0.1992 59.5 0.3922 -73.3 2.200 0.5956 131.5 1.195 33.1 0.687 -7.1 0.5868 14.8 0.5054 146.8 5.500 0.7419 68.3 0.643 -11.6 0.5949 5.7 0.5151
/datasheets/files/infineon/ehdata/spar/bfr193/r62v53m0.s2p
Infineon 24/11/1997 2.78 Kb S2P r62v53m0.s2p
! SIEMENS Small Signal Semiconductors ! BFP181W BFP181W ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 3 V IC = 3.5 mA ! Common Emitter S-Parameters 0.9827 -7.1 0.150 0.8642 -22.4 9.768 162.2 0.0234 76.9 0.9684 -10.6 0.200 0.8471 -29.7 139.0 0.0531 59.5 0.8569 -24.6 0.500 0.7026 -67.5 7.726 130.4 0.0610 54.5 0.8074 -28.7 0.4504 166.8 2.347 55.9 0.1140 32.1 0.4709 -59.5 2.800 0.4566 159.9 2.197 51.6 0.1175
/datasheets/files/infineon/ehdata/spar/bfp181w/x33v03m5.s2p
Infineon 14/08/1996 2.78 Kb S2P x33v03m5.s2p
! SIEMENS Small Signal Semiconductors ! BFS483 BFS483 ! Si NPN RF Bipolar Junction Transistor in SOT363 ! VCE = 1 V IC = 8 mA ! Common Emitter S-Parameters -14.6 20.958 170.9 0.0086 83.5 0.9646 -7.1 0.050 0.7218 -24.5 20.682 164.7 0.0141 79.8 -45.1 1.600 0.4755 170.7 2.635 65.4 0.1332 59.5 0.2469 -46.5 1.700 0.4780 168.4 2.508 63.2 0.1399 59.7 0.2415 -47.7 1.800 0.4828 165.8 2.372 61.0 0.1474 59.5 0.2377 -49.2
/datasheets/files/infineon/ehdata/spar/bfs483/s51v08m0.s2p
Infineon 24/04/1996 3.04 Kb S2P s51v08m0.s2p
! SIEMENS Small Signal Semiconductors ! BFP193 BFP193 ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 1 V IC = 4 mA ! Common Emitter S-Parameters 0.1002 25.6 0.3767 -59.5 0.800 0.6625 -170.0 3.310 79.8 0.1021 25.0 0.3542 -61.3 0.900 167.3 2.274 63.2 0.1073 26.2 0.3105 -69.7 1.300 0.6698 162.9 2.104 59.5 0.1093 27.1 161.5 6.000 0.8468 60.9 0.470 -22.4 0.3595 7.1 0.5669 151.0 ! ! SIEMENS AG
/datasheets/files/infineon/ehdata/spar/bfp193/p61v04m0.s2p
Infineon 12/11/1997 2.78 Kb S2P p61v04m0.s2p
! SIEMENS Small Signal Semiconductors ! BFT93 BFT93 ! Si PNP RF Bipolar Junction Transistor in SOT23 ! VCE = -1.5 V IC = -30 mA ! Common Emitter S-Parameters -114.7 23.364 140.0 0.0201 65.4 0.6478 -42.1 0.100 0.4470 -142.9 16.112 119.1 0.0307 59.5 0.4478 -66.1 0.150 0.4825 -157.1 11.697 107.3 0.0382 59.5 0.3349 -80.8 0.200 0.5014 -164.3 90.3 0.738 -1.5 0.4446 22.7 0.3514 141.0 4.000 0.7453 82.4 0.668 -7.1 0.4740 15.3
/datasheets/files/infineon/ehdata/spar/bft93/rf1v530m.s2p
Infineon 13/08/1996 2.78 Kb S2P rf1v530m.s2p
No abstract text available
/download/31295306-169519ZC/biptrans.zip ()
Infineon 07/09/2000 238.57 Kb ZIP biptrans.zip
! SIEMENS Small Signal Semiconductors ! BFT92 BFT92 ! Si PNP RF Bipolar Junction Transistor in SOT23 ! VCE = -3.5 V IC = -6 mA ! Common Emitter S-Parameters 166.7 2.422 64.6 0.1382 59.6 0.3921 -43.1 1.300 0.3673 162.4 2.250 61.4 0.1480 59.5 0.3871 -44.6 1.400 0.3767 157.6 2.102 58.2 0.1575 59.5 0.3833 -46.6 1.500 0.3803 153.3 0.3091 -154.3 4.500 0.6604 81.8 0.801 -7.1 0.5004 25.2 0.3441 -179.4 5.000 0.6934 74.4
/datasheets/files/infineon/ehdata/spar/bft92/re3v56m0.s2p
Infineon 14/08/1996 2.78 Kb S2P re3v56m0.s2p
! SIEMENS Small Signal Semiconductors ! BFT92 BFT92 ! Si PNP RF Bipolar Junction Transistor in SOT23 ! VCE = -0.5 V IC = -15 mA ! Common Emitter S-Parameters 0.1160 59.2 0.1127 -78.2 0.800 0.5708 161.1 1.731 65.7 0.1300 59.5 0.1097 -82.0 0.900 0.5669 157.0 1.562 61.3 0.1443 59.5 0.1091 -85.1 1.000 0.5731 153.0 1.434 56.9 0.1576 0.522 -7.1 0.5238 3.9 0.4869 112.2 5.500 0.7279 63.9 0.544 -8.8 0.5619 -1.0 0.5573
/datasheets/files/infineon/ehdata/spar/bft92/rev5015m.s2p
Infineon 14/08/1996 2.78 Kb S2P rev5015m.s2p
! SIEMENS Small Signal Semiconductors ! BFR280 BFR280 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 2.5 V IC = 3 mA ! Common Emitter S-Parameters 0.6438 -28.7 1.400 0.2034 -94.2 3.008 82.4 0.1159 59.5 0.6343 -29.5 1.500 0.1829 -98.6 2.861 79.5 0.1219 59.5 0.6253 -30.2 1.600 0.1581 -105.2 2.704 76.1 0.1286 59.4 0.6177 1.197 7.1 0.4093 38.1 0.3671 -99.0 5.500 0.4452 82.1 1.106 -1.1 0.4535 31.6 0.3269
/datasheets/files/infineon/ehdata/spar/bfr280/r22v53m0.s2p
Infineon 24/11/1997 2.95 Kb S2P r22v53m0.s2p
! SIEMENS Discrete & RF Semiconductors ! BFY181 BFY181 ! Si NPN RF Bipolar Junction Transistor in MICRO-X ! VCE = 2.5 V IC = 0.5 mA ! Common Emitter S-Parameters -7.1 0.300 0.9728 -17.2 1.790 164.4 0.0408 78.2 0.9925 -8.4 0.400 0.9647 -22.9 1.778 0.0894 62.9 0.9653 -19.1 0.800 0.9167 -44.8 1.673 139.3 0.0999 59.5 0.9542 -21.7 0.900 52.3 0.9344 -26.7 1.100 0.8775 -59.5 1.569 126.3 0.1271 49.3 0.9226 -28.9 1.200 0.8631
/datasheets/files/infineon/ehdata/spar/bfy181/xc2v5m50.s2p
Infineon 16/05/1997 2.78 Kb S2P xc2v5m50.s2p