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LP395Z/LFT4 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
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TIP117 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220 ri Buy

71/b 595 transistor

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Abstract: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Radar Pulsed Power Transistor, PH3134-65M PH3134-65M 65W v2.00 RF Test Fixture GROUND 3 pucEs, /=-=-I i, B;i"^ J/y ,] PC BOARDS, ROGERS , Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 (16.51)- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C , I 8.1 - j5.3 3.25 I 11.2-j11.7 7.1 - j4.3 3.40 I 12.7-j7.6 1 6.4-j3.3 ... Original
datasheet

2 pages,
145.71 Kb

PH3134-65M 572i transistor ZY transistor z4 n transistor ZY- b 595 transistor NPN TRANSISTOR Z4 datasheet abstract
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Abstract: A Æ c û M W an A M P com pany Radar Pulsed Power Transistor, 55W, 300ns Pulse, 10% Duty , C o m m o n B a s e C o n fig u ra tio n · B r o a d b a n d (Mass C O p e r a tio n · H igh K fficien cy In te rd ig ita te d G eo m etry ' · D iffu sed K m itter B a lla stin g R e sisto rs · Ciold M , r-E m itte r B re a kd o w n V o ltage C o lle c to r-E m itte r Le a ka g e C u rre n t The rm a l R , .5 12.7 - j 7.6 z , F ... OCR Scan
datasheet

2 pages,
56.42 Kb

datasheet abstract
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Abstract: Radar Pulsed Power Transistor, 65W, 100|is Puise, 10% Duty 3.1-3.4 GHz PH3134-65M PH3134-65M Features · · · · · · · · N1JN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C onfig u ratio n B ro a d b an d Class C O p e ratio n High Efficiency In terd ig ita te d G eo m etry D iffused E m itter B , to r-E m itte r B re a kd o w n V o ltage C o lle c to r-E m itte r Le a ka g e C u rre n t T h e rm , Loa d M ism atch T o le ra n ce 1c Symbol b v ces ^CES Min 65 - Max Units V lc = 2 5 ... OCR Scan
datasheet

2 pages,
56.02 Kb

PH3134-65M PH3134-65M abstract
datasheet frame
Abstract: w art A M P c o m p a n y Radar Pulsed Power Transistor, 65W, 100(is Pulse, 10% Duty 3.1-3.4 GHz PH3134-65M PH3134-65M Features · NPN Silicon M icrow ave P o w er T ran sisto r · C o m m o n B ase C o n figu ratio n · B ro ad b an d C lass C O peratio n · · · · · H igh E fficien cy In te rd igitated G eo m etry D iffu sed Em itter B allastin g R esistors G o ld M etalization System Intern al Inpu t and O utpu t Im , j1 1.7 11.5 - j9.5 12.7 - ¡7.6 z of(Q) 8.1 - j5.3 7.1 - ¡4.3 6 .4 -¡3 .3 : lü 1 - :x I LNU J ... OCR Scan
datasheet

2 pages,
55.48 Kb

L930 PH3134-65M PH3134-65M abstract
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Abstract: ; PCD3312C PCD3312C PCD3330 PCD3330 PCD3332-X PCD3332-X family 1996 Aug 19 Silicon planar epitaxial transistor Silicon planar epitaxial transistor Silicon planar epitaxial transistor Silicon planar epitaxial transistor Silicon planar epitaxial transistor Silicon planar epitaxial transistors Breakover diodes N-channel enhancement mode vertical D-MOS transistor N-channel enhancement mode vertical D-MOS transistor N-channel enhancement mode vertical D-MOS transistor N-channel vertical D-MOS transistor N-channel enhancement mode vertical D-MOS transistor N-channel ... OCR Scan
datasheet

3 pages,
101.77 Kb

DTMF line interface TRANSISTOR GUIDE 452 transistor 821 transistor transistor 81 110 w 63 dtmf interface with microcontroller transistor 438 bzw14 TDA7050 Analog Voice scrambler PMBTA92 diode Philips Semiconductors Selection Guide datasheet abstract
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Abstract: M fa oe m m an A M P com pany RF MOSFET Power Transistor, 150W, 28V 100 - 500 MHz UF28150J UF28150J , ces for B roadban d O p eratio n · C o m m o n S ou rce C on figuration · Low er N oise F loor r*|T , tm M N m at.73 A mm M 44 1 KM IMS C l«M 0 M9 C.ft ua c r U6 LM M s 1» H m Utt J Ul w IM7 K *9> 1 B 4 S L N N MO «I N U I «98 .m 488 MS .7 0 0 .7 7 1 J W jn U S JO jm M B m IN m ja 4» 490 itt 4M ill 4M ¿71 4J7 P 1 U8 Jl IO M 7JB a» J9 1 P M m m A m at» m m M4 J04 JN ... OCR Scan
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3 pages,
79.01 Kb

UF28150J UF28150J abstract
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Abstract: ) 3226-1451 Europe: Tel. + 4 4 (1 3 4 4 )8 6 9 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 1W , 9 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 1W, 28V UF2801KI UF2801KI V2.00 Typical , yM A fMe e o ii P m an co m p a n y RF MOSFET Power Transistor, 1W, 28V 100-500 MHz Features , MN MX MN DOCS TJ ^ " s T G 0J C mx 362 328 1.730 1.300 .019 ¿0 3 .034 .045 A B C D E F 9.07 eas 19.03 12.70 .41 4.95 .71 .74 9J9 6.33 44.43 337 .321 .730 .500 .016 .193 38.10 ... OCR Scan
datasheet

4 pages,
101.14 Kb

transistor sb 772 TRANSISTOR b 772 p d 772 transistor C1413 datasheet abstract
datasheet frame
Abstract: / M Ì K H m an A M P com p a n y Radar Pulsed Power Transistor, 12W, 150ns Pulse, 10% Duty 1 .2 , C o m m o n B ase C o n figu ratio n B ro ad b an d C lass C O p eratio n H igh K fficiency In terd igitated G eo m etry D iffu sed Em itter B allastin g Resistors G o ld M etalization System In tern al Inpu t Im p ed an ce M atching H erm etic M etal/Ceram ic Package : b/a :j4 übO ir 090 > ÜIÜ :i - J b ! * ybü 3 b) 123 C3 Db) Ü9J * 313 1 ¿b) Absolute Maximum Ratings at ... OCR Scan
datasheet

2 pages,
54.75 Kb

PH1214-12M PH1214-12M abstract
datasheet frame
Abstract: VLU! 7 .4 + j6 .3 7 5 + j7 .7 7 .4 + j 8 . 9 7.1 - ¡ 4 .4 S p e c ific a tio n s S u b je c t to , m ìa M an A M P com pany c o m Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% , sisto r C o m m o n Km itter C o n figu ratio n B ro ad b an d C lass A O p eratio n M atrix G e o m etry D iffused Km itter B allastin g R esistors ( ¡o ld M etalization System Intern al Inpu t Im p ed , Parameter C o lle c to r - E m itte r V o lta g e C o lle c to r - E m itte r V o lta g e E m itte r -B a s ... OCR Scan
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2 pages,
50.78 Kb

datasheet abstract
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Abstract: 869 595 (1344) 300 020 Radar Pulsed Power Transistor, PHI 21400.85L 0.85W v2.00 RF , Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry Diffused Emirter , ) 5.9 - j4.5 1.30 1.40 6.4 - j4.0 7.5 + j7.7 7.1 - j4.4 7.4 + j8.9 I ZIRCUIT , /Pacific: Te!. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (1344) 869 595 ... Original
datasheet

2 pages,
131.02 Kb

l 9113 ECG5016A BZ15 P77 transistor 1.5 j63 .15 j63 datasheet abstract
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No abstract text available
www.datasheetarchive.com/download/39368349-145391ZC/bfr193.zip (R62V53M0.S2P)
Infineon 08/09/2000 411.32 Kb ZIP bfr193.zip
No abstract text available
www.datasheetarchive.com/download/57167357-145329ZC/bf771.zip (G12V53M0.S2P)
Infineon 08/09/2000 414 Kb ZIP bf771.zip
! SIEMENS Small Signal Semiconductors ! BFR193 BFR193 BFR193 BFR193 ! Si NPN RF Bipolar Junction Transistor in SOT23 2.017 63.1 0.1212 49.2 0.4295 -50.3 1.300 0.5495 166.8 1.875 59.5 0.1281 51.3 0.4229 0.1743 58.6 0.4044 -66.3 1.900 0.5808 141.9 1.366 40.9 0.1865 59.5 0.3994 -70.2 2.000 0.5843 138.2 1.305 38.4 0.1992 59.5 0.3922 -73.3 2.200 0.5956 131.5 1.195 33.1 0.2264 -7.1 0.5868 14.8 0.5054 146.8 5.500 0.7419 68.3 0.643 -11.6 0.5949 5.7 0.5151 128.8
www.datasheetarchive.com/files/infineon/ehdata/spar/bfr193/r62v53m0.s2p
Infineon 24/11/1997 2.78 Kb S2P r62v53m0.s2p
No abstract text available
www.datasheetarchive.com/download/98554652-777290ZC/bf771.zip (G12V53M0.S2P)
Spice Models 29/07/2012 414 Kb ZIP bf771.zip
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www.datasheetarchive.com/download/42142743-777342ZC/bfr193.zip (R62V53M0.S2P)
Spice Models 29/07/2012 411.6 Kb ZIP bfr193.zip
No abstract text available
www.datasheetarchive.com/download/71093464-777349ZC/bfr92t.zip (T02V520M.S2P)
Spice Models 29/07/2012 273.09 Kb ZIP bfr92t.zip
! SIEMENS Small Signal Semiconductors ! BFS483 BFS483 BFS483 BFS483 ! Si NPN RF Bipolar Junction Transistor in SOT363 ! VCE = 1 V IC = 8 mA ! Common Emitter S-Parameters: October 1994 # 170.9 0.0086 83.5 0.9646 -7.1 0.050 0.7218 -24.5 20.682 164.7 0.0141 79.8 0.9452 -11.6 0.4755 170.7 2.635 65.4 0.1332 59.5 0.2469 -46.5 1.700 0.4780 168.4 2.508 63.2 0.1399 59.7 0.2415 -47.7 1.800 0.4828 165.8 2.372 61.0 0.1474 59.5 0.2377 -49.2 1.900 0.4878
www.datasheetarchive.com/files/infineon/ehdata/spar/bfs483/s51v08m0.s2p
Infineon 24/04/1996 3.04 Kb S2P s51v08m0.s2p
! SIEMENS Small Signal Semiconductors ! BFT92 BFT92 BFT92 BFT92 ! Si PNP RF Bipolar Junction Transistor in SOT23 ! VCE = -3.5 V IC = -6 mA ! Common Emitter S-Parameters: August 1996 # 64.6 0.1382 59.6 0.3921 -43.1 1.300 0.3673 162.4 2.250 61.4 0.1480 59.5 0.3871 -44.6 1.400 0.3767 157.6 2.102 58.2 0.1575 59.5 0.3833 -46.6 1.500 0.3803 153.3 1.993 55.1 4.500 0.6604 81.8 0.801 -7.1 0.5004 25.2 0.3441 -179.4 5.000 0.6934 74.4 0.708 -12.2
www.datasheetarchive.com/files/infineon/ehdata/spar/bft92/re3v56m0.s2p
Infineon 14/08/1996 2.78 Kb S2P re3v56m0.s2p
! SIEMENS Small Signal Semiconductors ! BFT92 BFT92 BFT92 BFT92 ! Si PNP RF Bipolar Junction Transistor in SOT23 ! VCE = -0.5 V IC = -15 mA ! Common Emitter S-Parameters: August 1996 59.2 0.1127 -78.2 0.800 0.5708 161.1 1.731 65.7 0.1300 59.5 0.1097 -82.0 0.900 0.5669 157.0 1.562 61.3 0.1443 59.5 0.1091 -85.1 1.000 0.5731 153.0 1.434 56.9 0.1576 59.2 -7.1 0.5238 3.9 0.4869 112.2 5.500 0.7279 63.9 0.544 -8.8 0.5619 -1.0 0.5573 110.2
www.datasheetarchive.com/files/infineon/ehdata/spar/bft92/rev5015m.s2p
Infineon 14/08/1996 2.78 Kb S2P rev5015m.s2p
! SIEMENS Small Signal Semiconductors ! BFP193 BFP193 BFP193 BFP193 ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 1 V IC = 4 mA ! Common Emitter S-Parameters: May 1996 # 0.3767 -59.5 0.800 0.6625 -170.0 3.310 79.8 0.1021 25.0 0.3542 -61.3 0.900 0.6583 -176.4 63.2 0.1073 26.2 0.3105 -69.7 1.300 0.6698 162.9 2.104 59.5 0.1093 27.1 0.3046 -71.8 0.8468 60.9 0.470 -22.4 0.3595 7.1 0.5669 151.0 ! ! SIEMENS AG Semiconductor Group, Munich
www.datasheetarchive.com/files/infineon/ehdata/spar/bfp193/p61v04m0.s2p
Infineon 12/11/1997 2.78 Kb S2P p61v04m0.s2p