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71/b 595 transistor

Catalog Datasheet MFG & Type PDF Document Tags

NPN TRANSISTOR Z4

Abstract: b 595 transistor . Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Radar Pulsed Power Transistor, PH3134-65M 65W v2.00 RF Test Fixture GROUND 3 pucEs, /=-=-I i, B;i"^ J/y ,] PC BOARDS , Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 (16.51)- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C , .3 3.25 I 11.2-j11.7 7.1 - j4.3 3.40 I 12.7-j7.6 1 6.4-j3.3 ( Specifications
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NPN TRANSISTOR Z4 b 595 transistor transistor ZY- transistor z4 n transistor ZY 572i EV-15

2N6665

Abstract: MA42001-509 America: Tel. (800) 366-2266 â  Asia/Pacific: Tel. +81(03)3226-1671 â  Europe: Tel. +44 (1344)869 595 , America: Tel. (800) 366-2266 â  Asia/Pacific: Tel. +81 (03)3226-1671 â  Europe: Tel. +44 (1344)869 595 , (03) 3226-1451 _ 8-69 Europe: Tel. +44(1344)869 595 Fax +44(1344)300 020 SbMEEOS OOOl?1^ S2T , MA42161 is a low noise silicon planar epitaxial transistor for 0.5 to 2.0 GHz amplifiers. These , : Tel. (800) 366-2266 â  Asia/Pacific: Tel. +81(03)3226-1671 â  Europe: Tel. +44(1344)869 595 Fax (800
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MA42001 MA42021 MA42121 2N6665 MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ MA42111 MA42141 MA42151 MA42051
Abstract: 1 KM IMS C l«M 0 M9 C.ft ua c r U6 LM M s 1» H m Utt J Ul w IM7 K *9> 1 B 4 S L N N MO «I N U I «98 .m 488 MS .7 0 0 .7 7 1 J W jn U S JO jm M B m IN m ja 4» 490 itt 4M ill 4M ¿71 4J7 , M fa oe m m an A M P com pany RF MOSFET Power Transistor, 150W, 28V 100 - 500 MHz UF28150J V2.00 Features · N -Channel E n han cem en t M ode D evice · DM OS Structure · I,ow er C ap acitan ces for B , +81 (03) 3226-1451 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 North America: RF -
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TRANSISTOR b 772 p

Abstract: transistor sb 772 : Tel. + 4 4 (1 3 4 4 )8 6 9 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 1W, 28V , 9 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 1W, 28V UF2801KI V2.00 Typical , yM A fMe e o ii P m an co m p a n y RF MOSFET Power Transistor, 1W, 28V 100-500 MHz Features , MN MX MN DOCS TJ ^ " s T G 0J C mx 362 328 1.730 1.300 .019 ¿0 3 .034 .045 A B C D E F 9.07 eas 19.03 12.70 .41 4.95 .71 .74 9J9 6.33 44.43 337 .321 .730 .500 .016 .193 38.10
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TRANSISTOR b 772 p transistor sb 772 C1413 d 772 transistor

L930

Abstract: w art A M P c o m p a n y Radar Pulsed Power Transistor, 65W, 100(is Pulse, 10% Duty 3.1-3.4 GHz PH3134-65M Features · NPN Silicon M icrow ave P o w er T ran sisto r · C o m m o n B ase C o n figu ratio n · B ro ad b an d C lass C O peratio n · · · · · H igh E fficien cy In te rd igitated G eo m etry D iffu sed Em itter B allastin g R esistors G o ld M etalization System Intern al Inpu t and O utpu , j1 1.7 11.5 - j9.5 12.7 - ¡7.6 z of(Q) 8.1 - j5.3 7.1 - ¡4.3 6 .4 -¡3 .3 : lü 1 - :x I LNU J
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L930

2N5054

Abstract: 2N6665-509 7 1 Fax +81 (03) 3226-1451 Europe: Tel. Fax 1 + 4 4 (1 3 4 4 )8 6 9 595 + 4 4 (1 3 4 4 )3 0 0 , M/A-COM, Inc. + 4 4 (1 3 4 4 )8 6 9 595 + 4 4 (1 3 4 4 )3 0 0 020 General Purpose Low Noise , Europe: Tel. Fax + 4 4 (1 3 4 4 )8 6 9 595 + 4 4 (1 3 4 4 )3 0 0 020 General Purpose Low Noise , 595 + 4 4 (1 3 4 4 )3 0 0 020 General Purpose Low Noise Bipolar Transistors V3.00 MA42141 , Range = 300 MHz to 2.0 GHz · Geometry = 63 The MA42141 NPN silicon planar transistor features excel lent
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MA42181

P77 transistor

Abstract: .15 j63 . 869 595 (1344) 300 020 Radar Pulsed Power Transistor, PHI 21400.85L 0.85W v2.00 RF , Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry Diffused Emirter , ) 5.9 - j4.5 1.30 1.40 6.4 - j4.0 7.5 + j7.7 7.1 - j4.4 7.4 + j8.9 I ZIRCUIT , (1344) 869 595 Fax +44 (1344) 300 020 M/A-COM
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ECG5016A P77 transistor 1.5 j63 BZ15 l 9113 40GI- PH1214-

PH1214-12M

Abstract: Radar Radar Pulsed Power Transistor 12 Watts, 1.20-1.40 GHz PH1214-12M PH1214-12M Radar Pulsed Power Transistor - 12 Watts, 1.20-1.40 GHz, 150 uS Pulse, 10% Duty 1 Features · · · · · · · · Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband , Description M/A-COM's PH1214-12M is a silicon bipolar NPN power transistor intended for use in L-band 1.2 - , power with medium pulse length (150uS) at 10 percent duty cycle. The transistor is housed in a 2
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Radar radar 77 ghz
Abstract: VLU! 7 .4 + j6 .3 7 5 + j7 .7 7 .4 + j 8 . 9 7.1 - ¡ 4 .4 S p e c ific a tio n s S u b je c t to , m ìa M an A M P com pany c o m Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20 , sisto r C o m m o n Km itter C o n figu ratio n B ro ad b an d C lass A O p eratio n M atrix G e o m etry D iffused Km itter B allastin g R esistors ( ¡o ld M etalization System Intern al Inpu t Im p ed , °C Parameter C o lle c to r - E m itte r V o lta g e C o lle c to r - E m itte r V o lta g e E m itte r -B a s -
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PH1214-0

transistor 12W

Abstract: / M Ì K H m an A M P com p a n y Radar Pulsed Power Transistor, 12W, 150ns Pulse, 10% Duty 1 .2 , C o m m o n B ase C o n figu ratio n B ro ad b an d C lass C O p eratio n H igh K fficiency In terd igitated G eo m etry D iffu sed Em itter B allastin g Resistors G o ld M etalization System In tern al Inpu t Im p ed an ce M atching H erm etic M etal/Ceram ic Package : b/a :j4 übO ir 090 > ÜIÜ :i - J b ! * ybü 3 b) 123 C3 Db) Ü9J * 313 1 ¿b) Absolute Maximum Ratings at
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transistor 12W
Abstract: Radar Pulsed Power Transistor, 65W, 100|is Puise, 10% Duty 3.1-3.4 GHz PH3134-65M Features · · · · · · · · N1JN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C onfig u ratio n B ro a d b an d Class C O p e ratio n High Efficiency In terd ig ita te d G eo m etry D iffused E m itter B , to r-E m itte r B re a kd o w n V o ltage C o lle c to r-E m itte r Le a ka g e C u rre n t T h e rm , Loa d M ism atch T o le ra n ce 1c Symbol b v ces ^CES Min 65 - Max Units V lc = 2 5 -
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Abstract: A Æ c û M W an A M P com pany Radar Pulsed Power Transistor, 55W, 300ns Pulse, 10% Duty , C o m m o n B a s e C o n fig u ra tio n · B r o a d b a n d (Mass C O p e r a tio n · H igh K fficien cy In te rd ig ita te d G eo m etry ' · D iffu sed K m itter B a lla stin g R e sisto rs · Ciold M , r-E m itte r B re a kd o w n V o ltage C o lle c to r-E m itte r Le a ka g e C u rre n t The rm a l R , .5 12.7 - j 7.6 z , F -
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PH3134-55L

zo 107 NA P 611

Abstract: TRANSISTOR 2SC 2026 Microwave Transistor UJ? t 0 2 G H z ~ ? , surface ensure very high reliability. The transistor is particularly intended for use in low-noise , resistance Junction to ambient air Vceo Vc e s Vcbo Vebo k Tstg 71 Ptot 20 27 27 1.5 35 - 6 5 t o , 0,686 0,708 0,605 0,611 0,595 0,517 0,587 0,526 0,507 0,516 0,516 0,502 0,509 0,511 0,509 0,500 0
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zo 107 NA P 611 TRANSISTOR 2SC 2026 2sc 643 642p Q62702-F655 BFQ60

PQHR106YA

Abstract: ML8204 ) Figure 2 Source transistor noHfn 71 BA8204, BA8204F Telephone systems: Tone ringer 40 l Oi , o o < 595 k ii, C2 = 0.0022 nF = Fig. 6 ÏH 2 R2 = 595 k il, C2 I0 h = 0.0022 nF , Sink transistor Test circuits IS S I 31 X 4 PQHR106YA Piezoelectric buzzer Figure 4 Ringer , Test sw. 1 3 2 sw 2 1 2 2 k fm fH2 R, = 773 k£l, C, = 0.1 |iF R2 = 595 ki2, C2= 0.0022 nF , OUT 1S S131X 4 BA8204/B A8204F Figure 9 Example of BA8204 or BA8204F application 74 RDNm
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ML8204 PQHR TELEPHONE RINGER BA6564A BA8204/B

7z transistor

Abstract: J401 ,s= 7-z E -= 2= .- = = FE an AMP company * Radar Pulsed Power Transistor, 5OW, loops Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M Features l l l l l l l ,900 (22.85) NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter , Package 1w Absolute Maximum Ratings at 25°C 100 :2 3) EH!TTEQ 71 100 (2.54) -: - , . +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (1344) 869 595 Fax +44 (1344
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7z transistor J401

transistor 1211

Abstract: transistor su 312 DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE , transistor has been applied ultra super mini mold package. FEATURES â'¢ High fT : 5 .5 GHz TYP. (@ V , 1 2 5 10 20 50 Ic - Collector Current - mA V be - B ase to Emitter V oltage - V , . COLLECTOR TO B ASE VO LTAG E MAG - Maximum Available Gain - dB IS2iel" - Insertion Power Gain - dB M
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transistor 1211 transistor su 312 transistor zo 109

PH3134-75S

Abstract: Aflkk fan AMP I an AMP company Radar Pulsed Power Transistor, 75W, 1 \is Pulse, 10% Duty 3.1 - 3.4 GHz PH3134-75S Features â'¢ NPN Silicon Microwave Power Transistor â'¢ Common Base , Fixture Impedances F(GHz) 3.10 11.2-j11.7 8.1 -j5.3 3.25 11.5-j9.5 7.1 -J4.3 3.40 12.7-j7.6 6.4 - j3 ,   Asia/Pacific: Tel. +81 (03) 3226-1671 â  Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020 Radar Pulsed Power Transistor, 75W PH3134-75S V2.00 RF Test
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Infineon technology roadmap for mosfet

Abstract: germanium transistor pnp smd suppliers of Silicon Germanium (SiGe) products. T h i s b r o c h u r e p r o v i d e s an overview of , small-scale AF multichip products. T h e r e h a v e b e e n many technical highlights during this period , . T h e b u s i n e s s s u c c e s s of our Silicon Discretes originates in our ability to vary , : Silicon Discretes Technology Roadmap Leading Edge in Bipolars S i x g e n e r a t i o n s o f b i p o , quantum leap to 25 GHz and 45 GHz (fourth and fifth generations respectively). T h e b a s i c S i b i p
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Infineon technology roadmap for mosfet germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 radar 77 ghz sige varactor flip chip B191-H7496-G1-X-7600

ha 174 transistor

Abstract: CMA110 microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-m b Rth m b-h Note 1. See "Mounting , Philips Semiconductors Product specification NPN microwave power transistor FEATURES · , amplifiers up to 4.2 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A , performance up to Tm b = 25 °C in a common emitter class-A amplifier. MODE OF OPERATION Class-A (CW) linear f , Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the
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ha 174 transistor CMA110 eb15V LTE42005S GL012

k68 transistor

Abstract: VARISTOR k75 designation, please contact and ask our office. l Transistor, diode, IC, thyristor or triac semiconductor , 100 A (V) 340 395 455 595 650 710 775 845 1025 1120 1240 1290 1355 1500 1650 1815 Rated Power (W) 0.8 , Allowable Voltage Maximum Clamping Voltage V 200 A (V) 340 395 455 595 650 710 775 845 1025 1120 1240 1290 , 91 EK3 C20 31 ERZ EK4 0 2 C 71 ERZ EK4 C20 ERZ 11 5 K 0E ZC2 ER 71 361 EK2 0EK ZC20 ZC2 ER
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ERZC20EK471 ERZC20EK271 ERZC20EK621 ERZC20EK911 k68 transistor VARISTOR k75 ERZ-C32EK821 UL1449 E86821 LR-92226 ZC32EK241 ERZC32EK271 ERZC32EK361
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