NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Radar Pulsed Power Transistor, PH3134-65M PH3134-65M 65W v2.00 RF Test Fixture GROUND 3 pucEs, /=-=-I i, B;i"^ J/y ,] PC BOARDS, ROGERS , Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 (16.51)- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C , I 8.1 - j5.3 3.25 I 11.2-j11.7 7.1 - j4.3 3.40 I 12.7-j7.6 1 6.4-j3.3 ... | Original |
2 pages, |
transistor ZY- PH3134-65M 572i transistor ZY transistor z4 n b 595 transistor NPN TRANSISTOR Z4 datasheet abstract |
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| Abstract: 869 595 (1344) 300 020 Radar Pulsed Power Transistor, PHI 21400.85L 0.85W v2.00 RF , Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry Diffused Emirter , ) 5.9 - j4.5 1.30 1.40 6.4 - j4.0 7.5 + j7.7 7.1 - j4.4 7.4 + j8.9 I ZIRCUIT , /Pacific: Te!. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (1344) 869 595 ... | Original |
2 pages, |
ECG5016A 1.5 j63 .15 j63 datasheet abstract |
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| Abstract: : Tel. (800) 366-2266 â- Asia/Pacific: Tel. +81(03)3226-1671 â- Europe: Tel. +44 (1344)869 595 Fax (800 , (800) 366-2266 â- Asia/Pacific: Tel. +81 (03)3226-1671 â- Europe: Tel. +44 (1344)869 595 Fax (800 , )869 595 Fax +44(1344)300 020 SbMEEOS OOOl?1^ S2T General Purpose Low Noise Bipolar Transistors , • Frequency Range = 500 MHz to 2 GHz The MA42161 MA42161 is a low noise silicon planar epitaxial transistor , (1344)869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44(1344)300 020 â- 5b42205 0001600 071 â- ... | OCR Scan |
15 pages, |
2N2857 RF Bipolar Transistor 2N35 A421 MA42021 MA42121 epitaxial micro-x MA42 MA421B RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model 2N3953 MA42001 MA42161 RF TRANSISTOR NPN MICRO-X datasheet abstract |
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| Abstract: ,s= 7-z E -= 2= .- = = FE an AMP company * Radar Pulsed Power Transistor, 5OW, loops Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M PH2226-50M Features l l l l l l l ,900 (22.85) NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter , Package 1w Absolute Maximum Ratings at 25°C 100 :2 3) EH!TTEQ 71 100 (2.54) -: - , +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (1344) 869 595 Fax +44 (1344 ... | Original |
1 pages, |
PH2226-50M PH2226-50M abstract |
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| Abstract: Radar Pulsed Power Transistor 12 Watts, 1.20-1.40 GHz PH1214-12M PH1214-12M PH1214-12M PH1214-12M Radar Pulsed Power Transistor - 12 Watts, 1.20-1.40 GHz, 150 uS Pulse, 10% Duty 1 Features · · · · · · · · Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband , Description M/A-COM's PH1214-12M PH1214-12M is a silicon bipolar NPN power transistor intended for use in L-band 1.2 - , power with medium pulse length (150uS) at 10 percent duty cycle. The transistor is housed in a 2-lead ... | Original |
2 pages, |
Radar PH1214-12M PH1214-12M abstract |
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| Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BLV92 BLV92 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV92 BLV92 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in mobile , capability and high power gain · gold metallization ensures excellent reliability. The transistor has a , DESCRIPTION 1 e emitter 2 e emitter 3 b base 4 c collector handbook ... | Original |
11 pages, |
SOT171A MDA408 BLV92 BLV92 abstract |
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| Abstract: saturation voltage Type Marking Ordering Code Pin Configuration Package BCP 71 M PCs Q62702-C2597 Q62702-C2597 1 = E 2 = C 3 = E 4= B 5 = C SCT-595 Maximum Ratings Parameter Symbol Value Unit Collector-emitter , SIEMENS BCP 71M NPN Silicon AF Power Transistor Preliminary data • Drain switch for RF power , 3 A Peak collector current 'cm 6 Base current >b 200 mA Peak base current 'bm 500 Total power , Collector-emitter saturation voltagel) /C = 2A, /b = 0.2A ^CEsat - 0.18 - V Base-emitter saturation voltage 1) /C = ... | OCR Scan |
4 pages, |
SCT-595 Q62702-C2597 Q62702-C2597 abstract |
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| Abstract: ) 40 5.95 (15.5) 73 0.34 -71 800 0.76 174 0.024 (-32.5) 41 5.25 (14.4 , DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S LTE42005S NPN microwave power transistor Product , NPN microwave power transistor LTE42005S LTE42005S FEATURES PINNING - SOT440A · Diffused emitter , 4.2 GHz. DESCRIPTION c b DESCRIPTION 3 NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. 2 e ... | Original |
10 pages, |
LTE42005S LTE42005S abstract |
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| Abstract: TRANSISTORS T- 3 J-17 P-N-P transistor in a microminiature plastic envelope. It is primarily intended for , , radar systems, oscilloscopes, spectrum analysers, etc. The transistor features low intermodulation , -1^10.1(8)1 A |B TOP VIEW If required, the R-version (reverse pinning) is available on request, RATINGS , GHz wideband transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector cut-off , typ. i8,o dB typ. 150 mV •Crystal mounted In SOT-37 envelope. January 1987 595 This Material ... | OCR Scan |
6 pages, |
BFR92A BFR92 BFT92 BFT92 abstract |
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| Abstract: 2SC D â- fl23Sb05 QQ04b43 T BISIEfi Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_- ?Sf D -TZ3/-33 -TZ3/-33_ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in , chip surface ensure very high reliability. The transistor is particularly intended for use in low-noise , ,671 -153 3,04 84 0,086 20 0,595 -37 14,2 0,9 0,659 -163 2,76 78 0,086 18 0,517 -43 12,7 1 0,673 -167 , ,73 76 0,055 41 0,343 -38 16,0 0,9 0,616 173 4,20 71 0,058 41 0,276 -48 14,9 1 0,621 172 3,81 67 0 ... | OCR Scan |
5 pages, |
Siemens Microwave Q62702-F655 BI10-M30T-AP6X bfq 85 BFQ60 -TZ3/-33 -TZ3/-33 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| C $8.71 $5.95 View LTC4245CG LTC4245CG LTC4245CG LTC4245CG LTC4245CUHF LTC4245CUHF LTC4245CUHF LTC4245CUHF QFN 38 C $8.71 $5.95 View LTC4245CUHF LTC4245CUHF LTC4245CUHF LTC4245CUHF#PBF QFN 38 C $8.71 $5.95 View transistors, the board supply voltages can be ramped up at an adjustable rate and in any desired sequence. An HS Data LTC4245CG LTC4245CG LTC4245CG LTC4245CG SSOP 36 C $8.71 www.datasheetarchive.com/files/linear/product/2935.html |
Linear | 17/09/2010 | 20.39 Kb | HTML | 2935.html |
| -1999 71 kB -1999 71 kB Wired Communica Wireless Commun AF Diodes AF Transistors RF Diodes RF Transistors 595 Silicon PIN diode -1999 67 kB www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~1476.htm |
Infineon | 26/10/2000 | 73.88 Kb | HTM | pro~1476.htm |
| .9 52 (71 mV) 450 17 1.6:1 34 1 headline NPN Small-Signal Transistors for Tuner, Broadband ] [mA] [pF] [V] [MHz] [dB] [MHz] [mA] 92 1 bf569 PNP Small-Signal Transistors for Tuner and Broadband 2 1 headline Dual-Gate Si-MOSFETs (N-Channel Depletion Mode) [V] [mA] [mW] [°C] [mS] [mA] [dB] [dB Monolithic Integrated Circuit) [V] [mA] [mW] [°C] [ms] [dB] [dB] [MHz] [pF] [pF] [MHz] [mA] [V] 17 1 s849 .1 0.9 1 7 to 14 5 24 1 s595t MOSMICs (MOS Monolithic Integrated Circuit) S595T SOT143 595 8 20 160 78 www.datasheetarchive.com/files/temic/database/text/transrf.txt |
Temic | 12/03/1997 | 14.34 Kb | TXT | transrf.txt |
| ! SIEMENS Small Signal Semiconductors ! BFR280 BFR280 BFR280 BFR280 ! Si NPN RF Bipolar Junction Transistor in SOT23 .2 0.300 0.7506 -33.9 7.319 143.3 0.0415 71.2 0.9053 -15.2 0.400 0.6841 -42.7 6 .8 0.900 0.3842 -71.3 4.244 101.8 0.0868 59.6 0.7012 -25.6 1.000 0.3415 -76.2 3.941 97.5 0.0926 59.5 0.6841 -26.4 1.100 0.3050 -80.8 3.680 93.6 0.0988 59.6 0.6694 -27.2 1.200 0.2695 -84.5 3.442 89.7 0.1047 59.5 0.6563 -28.0 1.300 0.2389 -88.4 3 www.datasheetarchive.com/download/6969142-777345ZC/bfr280.zip (R23V03M0.S2P) |
Spice Models | 29/07/2012 | 388.61 Kb | ZIP | bfr280.zip |
| ! SIEMENS Small Signal Semiconductors ! BFR280 BFR280 BFR280 BFR280 ! Si NPN RF Bipolar Junction Transistor in SOT23 .2 0.300 0.7506 -33.9 7.319 143.3 0.0415 71.2 0.9053 -15.2 0.400 0.6841 -42.7 6 .8 0.900 0.3842 -71.3 4.244 101.8 0.0868 59.6 0.7012 -25.6 1.000 0.3415 -76.2 3.941 97.5 0.0926 59.5 0.6841 -26.4 1.100 0.3050 -80.8 3.680 93.6 0.0988 59.6 0.6694 -27.2 1.200 0.2695 -84.5 3.442 89.7 0.1047 59.5 0.6563 -28.0 1.300 0.2389 -88.4 3 www.datasheetarchive.com/files/infineon/ehdata/spar/bfr280/r23v03m0.s2p |
Infineon | 24/11/1997 | 2.95 Kb | S2P | r23v03m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFR280 BFR280 BFR280 BFR280 ! Si NPN RF Bipolar Junction Transistor in SOT23 .2 0.300 0.7506 -33.9 7.319 143.3 0.0415 71.2 0.9053 -15.2 0.400 0.6841 -42.7 6 .8 0.900 0.3842 -71.3 4.244 101.8 0.0868 59.6 0.7012 -25.6 1.000 0.3415 -76.2 3.941 97.5 0.0926 59.5 0.6841 -26.4 1.100 0.3050 -80.8 3.680 93.6 0.0988 59.6 0.6694 -27.2 1.200 0.2695 -84.5 3.442 89.7 0.1047 59.5 0.6563 -28.0 1.300 0.2389 -88.4 3 www.datasheetarchive.com/download/82367736-145395ZC/bfr280.zip (R23V03M0.S2P) |
Infineon | 08/09/2000 | 388.33 Kb | ZIP | bfr280.zip |
| ! SIEMENS Small Signal Semiconductors ! BFR182W BFR182W BFR182W BFR182W ! Si NPN RF Bipolar Junction Transistor in SOT323 MAG ANG MAG ANG MAG ANG 0.100 0.6261 -41.4 22.086 151.5 0.0181 71.6 0 .3 0.300 0.4565 -95.9 13.704 118.3 0.0375 59.5 0.6215 -31.8 0.400 0.4119 -113.6 11.081 109 .2 3.590 74.1 0.1034 67.5 0.3831 -35.2 1.500 0.3561 176.8 3.368 71.8 0.1098 67.6 0 .2525 64.7 0.3860 -63.3 4.000 0.4501 126.0 1.458 30.5 0.2912 61.9 0.3894 -71.9 4.500 0 www.datasheetarchive.com/download/72205680-777338ZC/bfr182w.zip (W42V510M.S2P) |
Spice Models | 29/07/2012 | 59.16 Kb | ZIP | bfr182w.zip |
| ! BFR181 BFR181 BFR181 BFR181 , Si-NPN RF-Transistor in SOT23 ! VCE= 1.00V, IC= 3.00mA ! # GHz S MA R 50 .4350 71.6 .1497 59.1 .5464 -34.1 1.750 .1778 -152.3 2.3701 70.3 .1531 59.4 .5445 -34.4 1.800 .1772 -155.9 2.3253 69.1 .1569 59.5 .5415 -35.1 2 .9904 59.6 .1854 59.5 .5105 -39.1 2.400 .1929 161.8 1.8499 55.1 .2003 59.5 .2 .4846 -48.7 ! ! Noise Parameters ! f Fmin âopt Rn/50ê ! GHz dB Mag Ang www.datasheetarchive.com/files/siemens/ehdata/spar/bfr181/r31v03m0.s2p |
Siemens | 02/07/1993 | 2.9 Kb | S2P | r31v03m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFR182W BFR182W BFR182W BFR182W ! Si NPN RF Bipolar Junction Transistor in SOT323 .1 0.300 0.5531 -77.7 12.573 125.4 0.0420 59.5 0.7051 -29.3 0.400 0.4840 -95.0 10.496 115 .3601 -144.2 5.379 90.3 0.0751 59.5 0.4603 -33.7 1.000 0.3575 -151.1 4.906 87.1 0.0801 60 .4130 -36.9 1.600 0.3485 -178.5 3.185 71.9 0.1135 64.3 0.4095 -37.3 1.800 0.3556 175.6 2 .4 1.058 8.5 0.4495 50.8 0.4248 -104.9 ! ! f Fmin Gammaopt rn/50 ! GHz dB www.datasheetarchive.com/download/72205680-777338ZC/bfr182w.zip (W45V07M0.S2P) |
Spice Models | 29/07/2012 | 59.16 Kb | ZIP | bfr182w.zip |
| ! SIEMENS Small Signal Semiconductors ! BFR183W BFR183W BFR183W BFR183W ! Si NPN RF Bipolar Junction Transistor in SOT323 .4 3.262 71.8 0.1128 65.5 0.3185 -41.6 1.500 0.4236 172.8 3.062 69.6 0.1194 65.9 0.3155 -42.8 1.600 0.4252 169.5 2.887 67.5 0.1269 66.1 0.3131 -43.5 1.800 0.4351 164.7 2.595 63.5 0.1409 66.5 0.3096 -46.1 2.000 0.4335 159.6 2.358 59.5 0.1553 66.5 0.3087 -48 .5 0.972 6.7 0.4851 44.9 0.3504 -123.4 ! ! f Fmin Gammaopt rn/50 ! GHz dB www.datasheetarchive.com/download/2325488-777341ZC/bfr183w.zip (W52V510M.S2P) |
Spice Models | 29/07/2012 | 59.08 Kb | ZIP | bfr183w.zip |