NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| TPS82670SIPR | Texas Instruments | 600mA Fully Integrated, Low Noise Step-Down Converter in MicroSiP? Package 8-uSiP -40 to 85 | 
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| TPS82670SIPT | Texas Instruments | 600mA Fully Integrated, Low Noise Step-Down Converter in MicroSiP? Package 8-uSiP -40 to 85 |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: QFP92-P-1818-0 QFP92-P-1818-0,70 Unii;! nn Q_ >- ln o 70si 92 1, 05TYP 05TYP 19, 9±0. 5 17, 5±0. 2 69 47 HHHHHHHHHHHHHHHHHHHHHHH x O 46 0, 7 Mffl_ 23 0, 35±0, 1 cu o +1 LO r< 24 LO O +1 JT2B cu CD +1 OJ X ... | OCR Scan |
1 pages, |
QFP92-P-1818-0 QFP92 P-1818-0 05TYP QFP92 abstract |
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| Abstract: to + 70° or -25° to 85° VCC = 2.7V to 3.6V, GND = 0V) C C C C, A62S6308-70S/10S A62S6308-70S/10S A62S6308-70SI , ) Symbol A62S6308-70S/10S A62S6308-70S/10S Parameter A62S6308-70SI/10SI Unit Conditions Min. Max. , Operating Voltage * A62S6308-70S/10S A62S6308-70S/10S * A62S6308-70SI/10SI (October, 1998, Version 2.0) - ns , 15 32L SOP A62S6308M-70SI 40 30 32L SOP A62S6308V-70S A62S6308V-70S 40 15 32L TSOP 40 30 32L TSOP A62S6308X-70S A62S6308X-70S 40 15 32L sTSOP A62S6308X-70SI 40 30 32L sTSOP ... | Original |
17 pages, |
A62S6308 A62S6308 abstract |
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| Abstract: 70癈 or -25癈 to 85癈, VCC = 2.7V to 3.6V, GND = 0V) A62S7308B-55S/70S A62S7308B-55S/70S A62S7308B-55SI/70SI Min. , Characteristics (continued) Symbol A62S7308B-55S/70S A62S7308B-55S/70S Parameter A62S7308B-55SI/70SI Min. Max. , * A62S7308B-55SI/70SI ICCDR: Max. 1礎 at TA = 0癈 to + 40癈 PRELIMINARY (March, 2001, Version 0.2) 10 AMIC , A62S7308BG-55SI A62S7308BG-55SI 10 36B Mini BGA A62S7308BM-70S A62S7308BM-70S 5 32L SOP A62S7308BM-70SI 10 32L SOP A62S7308BV-70S A62S7308BV-70S 5 32L TSOP 10 32L TSOP A62S7308BX-70S A62S7308BX-70S 5 32L sTSOP A62S7308BX-70SI 10 ... | Original |
17 pages, |
A62S7308B -55SI A62S7308B abstract |
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| Abstract: ) A62S6308-70S/10S A62S6308-70S/10S A62S6308-70SI/10SI Min. Max. Min. Unit Conditions Max. ILI Input , Characteristics (continued) Symbol A62S6308-70S/10S A62S6308-70S/10S Parameter A62S6308-70SI/10SI Min. - 0.5 , * A62S6308-70SI/10SI (October, 1998, Version 2.0) - VCC = 2.0V CE2 0.2V ns tRC tR 20* 0 , SOP A62S6308M-70SI 40 30 32L SOP A62S6308V-70S A62S6308V-70S 40 15 32L TSOP 40 30 32L TSOP A62S6308X-70S A62S6308X-70S 40 15 32L sTSOP A62S6308X-70SI 40 30 32L sTSOP ... | Original |
17 pages, |
A62S6308 A62S6308 abstract |
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| Abstract: = 0V) A62S9308-70S A62S9308-70S A62S9308-70SI Min. Max. Min. Unit Conditions Max. ILI , Series DC Electrical Characteristics (continued) Symbol A62S9308-70S A62S9308-70S Parameter A62S9308-70SI , ICCDR2 SI-Version tCDR * A62S9308-70S A62S9308-70S * A62S9308-70SI PRELIMINARY - ns tRC , ) Standby Current Max. (礎) � A62S9308M-70S A62S9308M-70S 40 10 32L SOP A62S9308M-70SI 40 15 32L , 32L sTSOP A62S9308X-70SI 40 15 32L sTSOP A62S9308G-70S A62S9308G-70S 40 10 36B Mini BGA ... | Original |
17 pages, |
A62S9308 A62S9308 abstract |
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| Abstract: ) A62S8308-55S/70S A62S8308-55S/70S A62S8308-55SI/70SI Min. Max. Min. Unit Conditions Max. ILI Input , Electrical Characteristics (continued) Symbol A62S8308-55S/70S A62S8308-55S/70S Parameter A62S8308-55SI/70SI Unit , * A62S8308-55SI/70SI PRELIMINARY - ns tRC Operation Recovery Time 10* 0 Chip Disable to , Mini BGA A62S8308M-70S A62S8308M-70S 40 10 32L SOP A62S8308M-70SI 40 15 32L SOP , A62S8308X-70SI 40 15 32L sTSOP A62S8308G-70S A62S8308G-70S 40 10 36B Mini BGA A62S8308G-70SI 40 ... | Original |
17 pages, |
bga 6x8 Package A62S8308 A62S8308 abstract |
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| Abstract: AM29LV160DB-120WCF AM29LV160DB-120WCF AM29LV160DB-70EC AM29LV160DB-70EC\T AM29LV160DB-70EF AM29LV160DB-70EF AM29LV160DB-70EI AM29LV160DB-70EI\T AM29LV160DB-70SI AM29LV160DB-70WCCT AM29LV160DB-70WCCT , AM29LV160DT-120WCI AM29LV160DT-120WCI AM29LV160DT-70ED AM29LV160DT-70ED AM29LV160DT-70EI AM29LV160DT-70EI AM29LV160DT-70SI AM29LV160DT-70WCI AM29LV160DT-70WCI AM29LV160DT-90EC AM29LV160DT-90EC\T , AM29LV160DB-70REC AM29LV160DB-70REC AM29LV160DB-70SI\T AM29LV160DB-70WCD AM29LV160DB-70WCD AM29LV160DB-70WCI AM29LV160DB-70WCI AM29LV160DB-90EC AM29LV160DB-90EC AM29LV160DB-90EDT AM29LV160DB-90EDT , \T AM29LV800DB-70SI AM29LV800DB-70WBI AM29LV800DB-70WBI AM29LV800DB-90ED AM29LV800DB-90ED AM29LV800DB-90EF AM29LV800DB-90EF\T AM29LV800DB-90SC AM29LV800DB-90SC , AM29LV800DT-70EC AM29LV800DT-70EC\T AM29LV800DT-70EF AM29LV800DT-70EF AM29LV800DT-70SIT AM29LV800DT-70WBF AM29LV800DT-70WBF AM29LV800DT-70WBIT AM29LV800DT-70WBIT AM29LV800DT-90ED AM29LV800DT-90ED ... | Original |
12 pages, |
AM29DL163CB TSOP 48 PIN 46-PIN AM29LV652DU90RMAI AM29DL163CT AM29LV800DB-70EFT AM29LV800DB-90EI AM29LV160DT-70EC AM29LV160DT-120EDT AM29LV160DT Am29LV160DB-90EI MBM29DS163E MBM29LV160E datasheet abstract |
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| Abstract: ± 10%, GND = 0V) Symbol Parameter A623308-70S A623308-70S A623308-70SI/SU Min. Max. Min. , A623308-70SI/SU Unit Conditions Min. ISB Max. Min. Max. - 0.5 - 0.5 mA CE , A623308V-70SI 35 15 28L TSOP (Forward) A623308M-70SU A623308M-70SU 35 15 28L SOP A623308V-70SU A623308V-70SU 35 15 28L TSOP (Forward) Part No. A623308M-70SI (July, 2003, Version 1.0) Access Time (ns ... | Original |
13 pages, |
A623308V-70S A623308M-70S A623308 A623308 abstract |
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| Abstract: A62S8316-70SI Min. Symbol Max. Min. Max. Unit Conditions ILI Input Leakage Current , * A62S8316-70SI PRELIMINARY - - Conditions ns See Retention Waveform 1礎 at TA = 0癈 to + 40癈 , A62S8316G-70SI 50 15 48B Mini BGA Part No. Access Time (ns) A62S8316V-70S A62S8316V-70S A62S8316V-70SI 70 ... | Original |
15 pages, |
A62S8316 A62S8316 abstract |
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| Abstract: ) Parameter A62S8316-70S A62S8316-70S A62S8316-70SI Min. Symbol Max. Min. Max. Unit Conditions , 10* 0 Chip Disable to Data Retention Time * A62S8316-70S A62S8316-70S * A62S8316-70SI PRELIMINARY , 50 15 44L TSOP A62S8316G-70S A62S8316G-70S 50 10 48B Mini BGA A62S8316G-70SI 50 15 48B Mini BGA Part No. Access Time (ns) A62S8316V-70S A62S8316V-70S A62S8316V-70SI 70 PRELIMINARY ... | Original |
15 pages, |
bga 6x8 A62S8316 A62S8316 abstract |
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| Abstract: SILICON NPN EPITAXIAL PLANAR TRANSISTOR o VHF m ti m fëffl O ffl »» -c v fè ft o VHP Power Ampi i fier Appi ¡cation s o Frequency Mu] 1 ¡plier Appi ¡cat ions • mniimmmt&vcmL-ì-t : 175MHz -C P0 - 13.BW (Min. ) C Pj = 3.5W , Vcc = 28V ) 260MHz îP0 = 10W (Typ. ) î P-L = SW , Vcc = 28V ) !• ï^-S-ysy : fT = 400MHz ( Typ. ) MAXIMUM RATI NOS (Ta - 25 C) CHARACTERISTia SYMBOL RATINO ONIT * • M ft fE vCBO 65 V VCEO 40 V xìs-i.^MIE vEBO 4 V xus ¿Mm ic 3 A is -y* BsÅ" la -a A ( T c = 25 ° ... | OCR Scan |
2 pages, |
datasheet abstract |
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| Abstract: 768K12 20s?f ... | OCR Scan |
1 pages, |
datasheet abstract |
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| Abstract: VALVOLE RICEVENTI (PRODUZIONE PHILIPS E TELEFUNKEN) WE 18 max. K-ûrût. 1 Pentodo a mu variabile per bassa frequenza con indicatore di sintonia a raggio catodico. La possibilità di controllare anche una valvola a bassa frequenza permette di avere un'ampia ed efficace regolazione della sensibilità senza arrivare a forti tensioni di CAV che porterebbero al fenomeni di distorsione e modulazione incrociata negli stadi di alta e di media frequenza. È applicato il principio della tensione di sch ... | OCR Scan |
2 pages, |
telefunken ra 200 ricon valvole we telefunken Valvo datasheet abstract |
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| !BFQ70,Si-NPN-RF Transistor in CEREC-package !Vce = 6 V, Ic = 15 mA # GHZ S MA R 50 0.1 .67 -62 27.86 146 0.019 64 .84 -25 0.2 .62 -104 20.01 123 .029 49 .63 -38 0.3 .59 -128 14.73 110 .035 44 .50 -43 0.4 .60 -143 11.63 101 .038 43 .42 -44 0.6 .59 -162 7.97 89 .045 44 .34 -45 0.8 .59 -173 6.02 81 .051 46 .30 -45 1.0 .60 178 www.datasheetarchive.com/files/siemens/ehdata/spar/bfq70/ad6v015m.s2p |
Siemens | 02/07/1993 | 1.08 Kb | S2P | ad6v015m.s2p |
| !BFQ70,Si-NPN-RF Transistor in CEREC-package !Vce = 6 V, Ic = 10 mA # GHZ S MA R 50 0.1 .73 -50 22.77 151 .021 65 .89 -21 0.2 .67 -89 17.57 129 .034 52 .71 -34 0.3 .63 -114 13.44 115 .041 43 .57 -41 0.4 .62 -132 10.84 105 .045 41 .49 -44 0.6 .60 -153 7.56 92 .051 39 .39 -45 0.8 .60 -167 5.75 83 .057 40 .35 -46 1.0 .61 -177 www.datasheetarchive.com/files/siemens/ehdata/spar/bfq70/ad6v010m.s2p |
Siemens | 02/07/1993 | 1.08 Kb | S2P | ad6v010m.s2p |
| !BFQ70, Si-NPN-RF Transistor in CEREC-package !Vce = 10V, Ic = 10 mA # GHZ S MA R 50 0.1 .75 -45 22.64 153 .018 67 .91 -18 0.2 .69 -83 17.84 131 .030 53 .75 -29 0.3 .63 -109 13.82 117 .037 45 .63 -34 0.4 .62 -127 11.23 107 .041 42 .55 -36 0.6 .59 -149 7.88 93 .046 40 .46 -37 0.8 .59 -164 6.01 84 .051 41 .42 -37 1.0 .59 -174 www.datasheetarchive.com/files/siemens/ehdata/spar/bfq70/ad10v10m.s2p |
Siemens | 02/07/1993 | 1.08 Kb | S2P | ad10v10m.s2p |
| !BFQ70, SI-NPN-RF Transistor in CEREC package !Vce=6V, Ic=2mA # GHZ S MA R 50 0.1 .92 -23 7.0 165 .025 77 .98 -8 0.2 .89 -45 6.42 150 .049 65 .93 -16 0.3 .84 -65 5.74 137 .068 55 .87 -22 0.4 .80 -82 5.21 126 .081 46 .81 -28 0.6 .74 -110 4.14 109 .096 34 .71 -34 0.8 .71 -130 3.35 95 .103 26 .65 -38 1.0 .69 -146 www.datasheetarchive.com/files/siemens/ehdata/spar/bfq70/ad6v02m0.s2p |
Siemens | 02/07/1993 | 1.08 Kb | S2P | ad6v02m0.s2p |
| !BFQ70,Si-NPN-RF Transistor in CEREC-package !Vce = 6V, Ic = 5 mA # GHZ S MA R 50 0.1 .84 -35 14.47 159 .023 73 .95 -14 0.2 .78 -66 12.38 139 .042 58 .83 -26 0.3 .72 -90 10.21 125 .053 47 .72 -33 0.4 .69 -109 8.66 114 .060 40 .63 -37 0.6 .65 -135 6.32 99 .068 34 .52 -42 0.8 .63 -152 4.90 88 .072 31 .46 -44 1.0 .63 -165 www.datasheetarchive.com/files/siemens/ehdata/spar/bfq70/ad6v05m0.s2p |
Siemens | 02/07/1993 | 1.29 Kb | S2P | ad6v05m0.s2p |
| !BFQ70,Si-NPN-RF Transistor in CEREC-package !Vce = 6 V, Ic = 20 mA # GHZ S MA R 50 0.1 .63 -71 31.01 142 .017 59 .81 -28 0.2 .60 -113 21.18 119 .026 48 .58 -40 0.3 .58 -136 15.24 107 .031 45 .45 -43 0.4 .59 -150 11.90 98 .034 45 .38 -44 0.6 .59 -166 8.08 88 .041 47 .32 -43 0.8 .59 -177 6.09 80 .048 50 .29 -43 1.0 .60 175 www.datasheetarchive.com/files/siemens/ehdata/spar/bfq70/ad6v020m.s2p |
Siemens | 02/07/1993 | 1.08 Kb | S2P | ad6v020m.s2p |
| .43 Epoxy 01.91 06.39 Sb 00.51 01.70 SiO2 14808-60-7 10.16 34.09 Subtotal 12 www.datasheetarchive.com/files/philips/chemical_content/sa8028w.html |
Philips | 14/06/2005 | 6.37 Kb | HTML | sa8028w.html |
| ! SIEMENS Discrete & RF Semiconductors ! BAS70 ! Si Schottky Diode in SOT23 ! IF = 5 mA ! S-Parameters: February 1997 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.050 0.19807 -179.5 0.100 0.19933 -179.6 0.150 0.20121 -179.8 0.200 0.20258 -179.9 0.250 0.20367 179.8 0.300 0.20524 179.5 0.400 0.20904 179.0 0.500 0.21324 178.2 0.600 0.21812 177.5 0.700 0.22371 176.6 0.800 0.22954 175 www.datasheetarchive.com/files/infineon/ehdata/spar/bas70/thv005m0.s1p |
Infineon | 07/05/1997 | 1.13 Kb | S1P | thv005m0.s1p |
| ! SIEMENS Discrete & RF Semiconductors ! BAS70 ! Si Schottky Diode in SOT23 ! IF = 0.02 mA ! S-Parameters: February 1997 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.050 0.92674 -3.7 0.100 0.92237 -7.4 0.150 0.92065 -11.0 0.200 0.91782 -14.7 0.250 0.91349 -18.2 0.300 0.90890 -21.8 0.400 0.89808 -28.9 0.500 0.88467 -35.9 0.600 0.86819 -42.9 0.700 0.85228 -49.7 0.800 0.83370 -56 www.datasheetarchive.com/files/infineon/ehdata/spar/bas70/thv0020u.s1p |
Infineon | 07/05/1997 | 1.13 Kb | S1P | thv0020u.s1p |
| ! SIEMENS Discrete & RF Semiconductors ! BAS70 ! Si Schottky Diode in SOT23 ! VR = 3 V ! S-Parameters: February 1997 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.050 0.99999 -1.6 0.100 0.99896 -3.2 0.150 0.99840 -4.7 0.200 0.99891 -6.3 0.250 0.99810 -7.9 0.300 0.99760 -9.5 0.400 0.99650 -12.6 0.500 0.99429 -15.8 0.600 0.99273 -19.0 0.700 0.99037 -22.2 0.800 0.98730 -25.4 0.900 0.98399 -28.6 1.000 0.98135 -31.9 1 www.datasheetarchive.com/files/infineon/ehdata/spar/bas70/th3v00u0.s1p |
Infineon | 07/05/1997 | 1.13 Kb | S1P | th3v00u0.s1p |