500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ISL6625ACRZ-T Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; DFN8; Temp Range: See Datasheet visit Intersil Buy
ISL6596CBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6605IRZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6609ACRZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6596IBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6605IBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy

705 transistor datasheet

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: T1G3000532-SM 5W, 32V, 0.03 â'" 3.5 GHz, GaN RF Input-Matched Transistor Applications â'¢ â , T1G3000532-SM EAR99 QFN Packaged Part T1G3000532-SMEAR99 EVB Datasheet: Rev 001- 06-13-14 © 2014 , www.triquint.com T1G3000532-SM 5W, 32V, 0.03 â'" 3.5 GHz, GaN RF Input-Matched Transistor Absolute Maximum , (Typ.) 326 mA (Typ.) -2.7 V (Typ.) 225 ° (Max) C 7.05 W (Max) 9.1 W (Max) Electrical , , Efficiency Tuned 17.5 dB 5.5 W 70.5 % Gain at 3 dB Compression, Power Tuned 14.5 TriQuint Semiconductor
Original
Abstract: T1G3000532-SM 5W, 32V, 0.03 â'" 3.5 GHz, GaN RF Input-Matched Transistor Applications â'¢ â , Description T1G3000532-SM EAR99 QFN Packaged Part T1G3000532-SMEAR99 EVB Datasheet: Rev 001 , notice www.triquint.com T1G3000532-SM 5W, 32V, 0.03 â'" 3.5 GHz, GaN RF Input-Matched Transistor , (Typ.) 25 mA (Typ.) 326 mA (Typ.) -2.7 V (Typ.) 225 ° (Max) C 7.05 W (Max) 9.1 W (Max , Power-Added Efficiency at 3 dB Gain Compression, Efficiency Tuned 17.5 dB 5.5 W 70.5 % TriQuint Semiconductor
Original

EMH350PSXX

Abstract: SPHD-001T-P05 % 10 ms, 100% 5000 ms, Perf Criteria A, A, A, B - 230 VAC. Consult longform datasheet for 115 V , model number e.g. EMH250PS12-TF. See mechanical drawing later in this datasheet. Mechanical Details , mechanical drawing later in this datasheet. Mechanical Details EMH350 5.0 (127.0) Output Connector , . See compatibility table and mechanical drawing later in this datasheet. Mechanical Details EMH350D , . 5 V/2 A supply, always present when AC supplied AC OK is an open collector transistor, referenced to
-
Original
PHDR-12VS EMH350PSXX SPHD-001T-P05 EMH350PSXX-01 EMH250PSXX MIL-HDBK-217F MTA-156 SL-156 EMH350PSXX-01TF EMH350PSXX-02VF S12B-PHDSS
Abstract: . Consult longform datasheet for 115 V operation. â'¢ EN60601-1, ANSI/AAMI ES60601-1, CSA22.2 No , mechanical drawing later in this datasheet. Mechanical Details EMH250PSXX 5.0 (127.0) 0.22 (5.7 , compatibility table and mechanical drawing later in this datasheet. Mechanical Details EMH350 5.0 (127.0 , table and mechanical drawing later in this datasheet. Mechanical Details EMH350D 5.75 Â , OK/Power Fail AC OK is an open collector transistor, referenced to negative sense, providing a -
Original
SPHD-001T-P0 EMH350PSXX-50TF

TRANSISTOR 707

Abstract: 064556 D. Transistor Count: 341 D. Assembly Location: Malaysia or Thailand E. Date of Initial , parameters guaranteed by the Datasheet. 0.1% For all Visual Defects. C. Observed Outgoing Defect Rate , /C 5 8 PIN DIP DEVICES: MAX 705/706/707/708/709/809/811/812
Maxim Integrated Products
Original
MAX811TEUS MAX811 TRANSISTOR 707 064556 MS17 MAX811T

transistor jst 26

Abstract: datasheet Operating Humidity â'¢ 95% RH, non-condensing Storage Temperature â'¢ -40 °C to +85 °C , , B - 230 VAC. Consult longform datasheet for 115 V operation. â'¢ EN60601-1, ANSI/AAMI ES60601 , â'˜-TFâ'™ to model number e.g. EMH250PS12-TF. See mechanical drawing later in this datasheet , this datasheet. Mechanical Details EMH350 5.0 (127.0) Signals Connector* Output Connector , in this datasheet. Mechanical Details EMH350D 5.75 ±0.02 (146.0 ±0.5) Signals Connector
XP Power
Original
transistor jst 26 EMH350PD22 EMH350PD23 EMH350PD24

TS16949

Abstract: ZXTN08400BFF ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V , ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high , -900 mV IC = -200mA, IB = -40mA(*) Base-emitter turn-on voltage VBE(on) -705 -800 mV , discontinued Datasheet status key: "Draft version" This term denotes a very early datasheet version and , version" This term denotes a pre-release datasheet. It provides a clear indication of anticipated
Zetex Semiconductors
Original
ZXTP08400BFFTA TS16949 D-81541

TRANSISTOR MARKING 1d6

Abstract: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V , ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high , (*) Base-emitter turn-on voltage VBE(on) -705 -800 mV IC = -200mA, VCE = -10V(*) Base-emitter , existing designs and production â'Obsoleteâ' Production has been discontinued Datasheet status key: â'Draft versionâ' This term denotes a very early datasheet version and contains highly provisional
Zetex Semiconductors
Original
TRANSISTOR MARKING 1d6

Zetex T 705

Abstract: TRANSISTOR MARKING 1d6 ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V , ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high , ) -810 -900 mV IC = -200mA, IB = -40mA(*) Base-emitter turn-on voltage VBE(on) -705 , discontinued Datasheet status key: "Draft version" This term denotes a very early datasheet version and , version" This term denotes a pre-release datasheet. It provides a clear indication of anticipated
Zetex Semiconductors
Original
Zetex T 705
Abstract: TGF3020-SM 5W, 32V, 4 â'" 6 GHz, GaN RF Input-Matched Transistor Applications â'¢ â'¢ â'¢ â , TGF3020-SMEVB1 EAR99 5.3 â'" 5.9 GHz EVB TGF3020-SMEVB2 Datasheet: Rev A 09-26-14 © 2014 TriQuint , www.triquint.com TGF3020-SM 5W, 32V, 4 â'" 6 GHz, GaN RF Input-Matched Transistor Absolute Maximum Ratings , ) Power Dissipation, Pulse (PD) 7.05 W (Max) 2 9.1 W (Max) 1 Electrical specifications are , , Power Tuned 9.7 dB Datasheet: Rev A 09-26-14 © 2014 TriQuint - 2 of 23 - Disclaimer TriQuint Semiconductor
Original

C2472PX2-TR7

Abstract: C2472PX2 C2472, C2473 and C2474 Datasheet RDFC Controllers for Offline Applications ADVANTAGES , -1423-0709C 26-Sep-2007 C2472, C2473 and C2474 Datasheet RDFC Controllers for Offline Applications PIN , primary switching transistor, via a c oupling capacitor, to control the timing and current levels of the , , the AUX pin is connected to the external supply rail via an NPN transistor and a current-limiting , . BAS Pin The BAS pin switches the external bipolar primary switch transistor on and off. The current
Cambridge Semiconductor
Original
C2474PW1 C2472PX2 C2473PX1 DS-1423-0709C C2472PX2-TR7 Cambridge capacitor capacitors sot23-6 marking code FA desaturation design

C2472PX2-TR7

Abstract: C2472PX2 C2472 and C2473 Datasheet RDFC Controllers for Offline Applications ADVANTAGES , © Cambridge Semiconductor Ltd 2009 Page 1 of 18 DS-1423-0905 06-May-2009 C2472 and C2473 Datasheet , is used to sense the collector voltage of the primary switching transistor, via a coupling capacitor , rail via an NPN transistor and a current-limiting resistor to set the maximum base current; however , bipolar primary switch transistor on and off. The current supplied to the switch transistor is controlled
Cambridge Semiconductor
Original
fa sot23-6 JP MARKING CODE SOT23-6 JESD22-A114 sot23-6 CAMSEMI

sot23-6 marking code FA

Abstract: marking FAXX C2472 Datasheet RDFC Controller for Offline Applications ADVANTAGES · · · · · · Low system , Semiconductor Ltd 2009 Page 1 of 1 DS-1423-1210 01-Oct-2012 C2472 Datasheet RDFC Controller for , of the primary switching transistor, via a coupling capacitor, to control the timing and current , . In most applications, the AUX pin is connected to the external supply rail via an NPN transistor and , power consumption. BAS Pin The BAS pin switches the external bipolar primary switch transistor on
Cambridge Semiconductor
Original
marking FAXX C2472PX2-TR13
Abstract: C2472 Datasheet RDFC Controller for Offline Applications ADVANTAGES â'¢ â'¢ â'¢ â'¢ â'¢ â , -1423-1210 01-Oct-2012 C2472 Datasheet RDFC Controller for Offline Applications PIN DEFINITIONS Figure , Pin The COL pin is used to sense the collector voltage of the primary switching transistor, via a , external supply rail via an NPN transistor and a current-limiting resistor to set the maximum base current , bipolar primary switch transistor on and off. The current supplied to the switch transistor is controlled Cambridge Semiconductor
Original
36FDC6F845 C29DE6F4C

low noise hemt

Abstract: low noise x band hemt transistor EC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with a SI3N4 layer. D S , -66.1 -70.5 -75.0 -80.5 -86.8 -94.1 -101.1 -106.9 -110.2 -110.9 -109.6 Typical results , Chip form Package : EC2623-99X/00 : TC2623-A3X/00 (see DataSheet TC2623 for more informations
United Monolithic Semiconductors
Original
BMH204 low noise hemt low noise x band hemt transistor low noise hemt transistor transistor HEMT GaS DSEC26237003

Filtronic Compound Semiconductors

Abstract: FPD1050SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes , Preliminary Datasheet ABSOLUTE MAXIMUM RATING : PARAMETER Drain-Source Voltage Gate-Source Voltage , Preliminary Datasheet SOT343 PACKAGE OUTLINE AND RECOMMENDED PC BOARD LAYOUT SOURCE GATE DRAIN , Preliminary Datasheet S-PARAMETERS BIASED @ 4V, 60MA Freq (GHz) 0.60 0.90 1.20 1.50 1.80 2.10 2.40 2.70 , 0.304 177.9 0.610 -169.0 5.798 70.5 0.081 38.1 0.318 169.9 0.606 -179.7 5.142 63.2 0.089 35.3 0.325
Filtronic
Original
Filtronic Compound Semiconductors 85GHZ S21/S12 J-STD-020C 22-A114

c548b

Abstract: transistor D304 protect the external transistor switch against undesirable over voltages. The gate drive resistor R108 is , CAP PNP TRANSISTOR NPN TRANSISTOR Quasi-Resonant PWM Controller RESISTOR CERAMIC CERAMIC OPTO , thermal camera at room temperature. 123.0 °C 110.6 Point T °C Emis. Ta °C A 70.5 , 110Vac/60Hz 100.0 °C 90.4 Point T °C Emis. Ta °C 80.9 A 70.5°C 1.00 34.3 , References [1] ICE2QS02G datasheet, Version 2.0, Infineon Technologies AG, 2008 [2] ICE2PCS02 datasheet
Infineon Technologies
Original
EVALQS-190W-ICE2QS02G ICE3BR4765J EVALPFC2-ICE2PCS02 ICE2QS01 c548b transistor D304 2QS02G transistor C548B IC302 transformer smps 300R SPA11N80C3 IPA60R199CP AN-EVALSF3R-ICE3BR4765J

TRANSISTOR 58050

Abstract: 58050 transistor Philips Components Datasheet status Product specification date of issue April 1991 BF747 N P N 1 GHz wideband transistor FEATURES QUICK REFERENCE DATA â'¢ Stable oscillator , collector-base voltage emitter-base voltage V V V The BF747 is a low cost NPN transistor in a plastic , PACKING QUANTITY 3000 Philips Components Product specification NPN 1 GHz wideband transistor , GHz pF dB Philips Components Product specification N P H 1 GHz wideband transistor
-
OCR Scan
TRANSISTOR 58050 58050 transistor IEC134

te 804

Abstract: FPD6836SOT343 FPD6836SOT343 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES , DESCRIPTION: The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor , : sales@filcs.com Website: www.filtronic.com FPD6836SOT343 Datasheet v2.1 1 ABSOLUTE MAXIMUM RATING , Website: www.filtronic.com FPD6836SOT343 Datasheet v2.1 TYPICAL FREQUENCY REPONSE: Gain & Noise , Website: www.filtronic.com Drain Efficiency (%) 21.0 60.0% FPD6836SOT343 Datasheet v2
Filtronic
Original
FPD6836SOT343E MIL-HDBK-263 te 804 Filtronic 423 1850MHZ 2002/95/EC FPD6836SOT343E-EB 22A114 MIL-STD-1686

transistor c708

Abstract: LTA 702 N C-705 To Order Previous Datasheet Index Next Data Sheet IRGBC30UD2 4.0 1000 , Previous Datasheet Index Next Data Sheet PD - 9.796A IRGBC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V · , Previous Datasheet Index Next Data Sheet IRGBC30UD2 Electrical Characteristics @ T = 25°C (unless , factor 0.1%. C-702 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index
International Rectifier
Original
transistor c708 LTA 702 N C702 diode diode c706 C706 diode c705 C-707 C-708
Showing first 20 results.