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TL6700NF260QG E-Switch Inc Keypad Switch visit Digikey
TL6700NF160QG E-Switch Inc Keypad Switch visit Digikey
TL6700NF260QJ E-Switch Inc Keypad Switch visit Digikey
RCX700N20 ROHM Semiconductor Power Field-Effect Transistor, 70A I(D), 200V, 0.0427ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN visit Digikey
RCJ700N20TL ROHM Semiconductor Power Field-Effect Transistor, 70A I(D), 200V, 0.0427ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, SC-83, 3/2 PIN visit Digikey
TL6700NF160QJ E-Switch Inc Keypad Switch, 1 Switches, SPST, Momentary, 0.05A, 12VDC, 2.06N, Solder Terminal, Surface Mount-straight, ROHS COMPLIANT visit Digikey

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700n

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: P-FA ftp uli 2sa458 6.0M 10OOn 700n 700n 1 50m 1.0 0 1Om0 60 P-A Of 85j R0107b 3# 2sa459 6.0M 1000n 700n 700n 150m 1.0 0 1Om0 120 P-A Ge 85j R0107b 4# asy32 6.00MSA 22OOn0 5OOn0 1.4u , 1.0 0 1Om0 150 0 4.0 12p 1.7n P-A G 85J TO 5 19# 2SA406 9.00M 47On0t 700n 270nt 200m 1.0 0 1Om0 50 , # 2SC91H 10.om .10(1 120m .30 0 2OOm0 20 A N Gp 85J TO 5 26# 2SA326 10.0M 85n 2.3u 700n 80m 1.0 0 , .om 600n 400n 300n 120m .50 0 2Om0 40 1.5 2Od0 N-A Gp 85j T01 34# bc100 10.0MS 700n 500n 900n 500n 2.5 -
OCR Scan
2N3604 2n3604 transistor 2SC5220 2SC5240 2sc5250 transistor CK26A 2N3602 2N3603 USAF501ES001M JAN2N3789 JAN2N3790
Abstract: 15 10 3 50 50 75 75 75 650n 700n 700n 700n 2.0u 2.0u 10 75 75 75 65 65 125 65 65 10 10 ~j~ j 175 , 10u 700n 700n 700n 2.0u 2.0u 2.0u 650n 650n SOOn 500n 500n 1.0u 1.0u 10u 2.0u 2.0u 2.0u 0.3u 0.3u 0.7u , 1u 1.0u 700n 700n 50 50 50 50 50 50 75 10 10 +g:~~:~: jgg~ 700n ~g 10 g~j 125 J Advanced Semiconductor
Original
MJE1320 PT8851A MRF262 TIPL770 KT704A 2S0200 KT704 MJ8501 BU205 HITACHI 2sc935 KSC2233 B0933F SFT8500 BOY15 B0106
Abstract: 5.0 5.0 5.0 5.0 10 10 10 50 50 50 500k 500k 500k 200m 200m 200m 700n 700n 700n 52# 53# 54# M5D , 10m 5.0 5.0 5.0 5.0 10 10 10 10 10 50 50 50 500k 500k 500k 200m 200m 200m 700n 700n 700n 55# 56 , 200 200 10m 1Om0 5.0m 5.0 5.0 5.0 10 10 1.0 10 10 15 50 50 500k 500k 2.0M 200m 200m 700n 700n PL T061 , P-FA ftp uli 2sa458 6.0M 10OOn 700n 700n 1 50m 1.0 0 1Om0 60 P-A Of 85j R0107b 3# 2sa459 6.0M 1000n 700n 700n 150m 1.0 0 1Om0 120 P-A Ge 85j R0107b 4# asy32 6.00MSA 22OOn0 5OOn0 1.4u -
OCR Scan
2SC102 transistor 2sc102 2N2902 TK30556 1763-0625 TK30560 NPN110 BUY56-6 BUY72-4 BUY72-6 BUY72-10
Abstract: 140 J 135 J 140 J 140 J 5.0M 5.0M 4.0M 10M 10M 10M 800n 800n 700n 1.0u LOu ~~~~~6't) 65 , lOu lOu lOu lOu 500u 1.0m 200u 5.0m lOOn loon lOOn lOOn lOOn lOOn lOOn lOOn 500n 500n 700n 700n 700n .70u 800n 800n 800n +g:~~g ~g 20 50 1.2 1.2 2.0 2.0 40 15 1~ ~:g j 140 J 140 J 140 J , Dvcs Solitron Solitron Sid St Dvcs ~anyo ~~ect 800n 800n 700n LOu 1.0u 350n 700n 1.5u 1.5u 0.5u 500n 1.0u 1.0u 500n 500n 700n 700n 700n .70u 1.5u ts.1! ~g~ 10M 10M 4.0M 8.0M ~~g~!~~ t Advanced Semiconductor
Original
2SD382 2SD1459R 2SD608A nec 2sd381 TIP65 MJ4361 2SC522 2N1482 BDC01D 2SD381 2SB1086
Abstract: 6OOn0r 300nt 350nt 80m 35Om0 10mA 55 3.2 1 4p 55nt P-FA ftp uli 2sa458 6.0M 10OOn 700n 700n 1 50m 1.0 0 1Om0 60 P-A Of 85j R0107b 3# 2sa459 6.0M 1000n 700n 700n 150m 1.0 0 1Om0 120 P-A Ge , 85J TO 5 19# 2SA406 9.00M 47On0t 700n 270nt 200m 1.0 0 1Om0 50 5.0 15p P-A Gp 85 T05 20# 2SC36 , 2OOm0 20 A N Gp 85J TO 5 26# 2SA326 10.0M 85n 2.3u 700n 80m 1.0 0 8Om0 60 13p P-A Gp 85J T01 , .50 0 2Om0 40 1.5 2Od0 N-A Gp 85j T01 34# bc100 10.0MS 700n 500n 900n 500n 2.5 0* 20 0 1Om0 40 160 -
OCR Scan
SF.T298 2N2161 2g396 2N1103 500NT 2SC167
Abstract: P-FA ftp uli 2sa458 6.0M 10OOn 700n 700n 1 50m 1.0 0 1Om0 60 P-A Of 85j R0107b 3# 2sa459 6.0M 1000n 700n 700n 150m 1.0 0 1Om0 120 P-A Ge 85j R0107b 4# asy32 6.00MSA 22OOn0 5OOn0 1.4u , 1.0 0 1Om0 150 0 4.0 12p 1.7n P-A G 85J TO 5 19# 2SA406 9.00M 47On0t 700n 270nt 200m 1.0 0 1Om0 50 , # 2SC91H 10.om .10(1 120m .30 0 2OOm0 20 A N Gp 85J TO 5 26# 2SA326 10.0M 85n 2.3u 700n 80m 1.0 0 , .om 600n 400n 300n 120m .50 0 2Om0 40 1.5 2Od0 N-A Gp 85j T01 34# bc100 10.0MS 700n 500n 900n 500n 2.5 -
OCR Scan
2n2886 ST6574 2SC38 BC226 2SC511R 2SC1381
Abstract: P-FA ftp uli 2sa458 6.0M 10OOn 700n 700n 1 50m 1.0 0 1Om0 60 P-A Of 85j R0107b 3# 2sa459 6.0M 1000n 700n 700n 150m 1.0 0 1Om0 120 P-A Ge 85j R0107b 4# asy32 6.00MSA 22OOn0 5OOn0 1.4u , 1.0 0 1Om0 150 0 4.0 12p 1.7n P-A G 85J TO 5 19# 2SA406 9.00M 47On0t 700n 270nt 200m 1.0 0 1Om0 50 , # 2SC91H 10.om .10(1 120m .30 0 2OOm0 20 A N Gp 85J TO 5 26# 2SA326 10.0M 85n 2.3u 700n 80m 1.0 0 , .om 600n 400n 300n 120m .50 0 2Om0 40 1.5 2Od0 N-A Gp 85j T01 34# bc100 10.0MS 700n 500n 900n 500n 2.5 -
OCR Scan
2SA143 2SA94 2N1673 CK13 CK13A CK27A
Abstract: P-FA ftp uli 2sa458 6.0M 10OOn 700n 700n 1 50m 1.0 0 1Om0 60 P-A Of 85j R0107b 3# 2sa459 6.0M 1000n 700n 700n 150m 1.0 0 1Om0 120 P-A Ge 85j R0107b 4# asy32 6.00MSA 22OOn0 5OOn0 1.4u , 1.0 0 1Om0 150 0 4.0 12p 1.7n P-A G 85J TO 5 19# 2SA406 9.00M 47On0t 700n 270nt 200m 1.0 0 1Om0 50 , # 2SC91H 10.om .10(1 120m .30 0 2OOm0 20 A N Gp 85J TO 5 26# 2SA326 10.0M 85n 2.3u 700n 80m 1.0 0 , .om 600n 400n 300n 120m .50 0 2Om0 40 1.5 2Od0 N-A Gp 85j T01 34# bc100 10.0MS 700n 500n 900n 500n 2.5 -
OCR Scan
SFT308 2N123 2SC166 R107 A3738 65T1 PNP GE
Abstract: P-FA ftp uli 2sa458 6.0M 10OOn 700n 700n 1 50m 1.0 0 1Om0 60 P-A Of 85j R0107b 3# 2sa459 6.0M 1000n 700n 700n 150m 1.0 0 1Om0 120 P-A Ge 85j R0107b 4# asy32 6.00MSA 22OOn0 5OOn0 1.4u , 1.0 0 1Om0 150 0 4.0 12p 1.7n P-A G 85J TO 5 19# 2SA406 9.00M 47On0t 700n 270nt 200m 1.0 0 1Om0 50 , # 2SC91H 10.om .10(1 120m .30 0 2OOm0 20 A N Gp 85J TO 5 26# 2SA326 10.0M 85n 2.3u 700n 80m 1.0 0 , .om 600n 400n 300n 120m .50 0 2Om0 40 1.5 2Od0 N-A Gp 85j T01 34# bc100 10.0MS 700n 500n 900n 500n 2.5 -
OCR Scan
transistor b1154 B1154 10PE1 ASY13-2 2N2962 GET116
Abstract: 6.0M 10OOn 700n 700n 1 50m 1.0 0 1Om0 60 P-A Of 85j R0107b 3# 2sa459 6.0M 1000n 700n 700n 150m , G 85J TO 5 19# 2SA406 9.00M 47On0t 700n 270nt 200m 1.0 0 1Om0 50 5.0 15p P-A Gp 85 T05 20 , .30 0 2OOm0 20 A N Gp 85J TO 5 26# 2SA326 10.0M 85n 2.3u 700n 80m 1.0 0 8Om0 60 13p P-A Gp , 120m .50 0 2Om0 40 1.5 2Od0 N-A Gp 85j T01 34# bc100 10.0MS 700n 500n 900n 500n 2.5 0* 20 0 1Om0 40 , 175J MD29 A0 83 TN304 20.0MS 1 50n 50n 700n 200n 30 0 1.0 0 5Om0 25 250m 1 25p0 N-PE y 200A MT47 -
OCR Scan
DTS108 2SC5250 2sd222 DTS103 DTS106 L30C
Abstract: P-FA ftp uli 2sa458 6.0M 10OOn 700n 700n 1 50m 1.0 0 1Om0 60 P-A Of 85j R0107b 3# 2sa459 6.0M 1000n 700n 700n 150m 1.0 0 1Om0 120 P-A Ge 85j R0107b 4# asy32 6.00MSA 22OOn0 5OOn0 1.4u , 1.0 0 1Om0 150 0 4.0 12p 1.7n P-A G 85J TO 5 19# 2SA406 9.00M 47On0t 700n 270nt 200m 1.0 0 1Om0 50 , # 2SC91H 10.om .10(1 120m .30 0 2OOm0 20 A N Gp 85J TO 5 26# 2SA326 10.0M 85n 2.3u 700n 80m 1.0 0 , .om 600n 400n 300n 120m .50 0 2Om0 40 1.5 2Od0 N-A Gp 85j T01 34# bc100 10.0MS 700n 500n 900n 500n 2.5 -
OCR Scan
OC169 transistor 2SA92 2SA471 2SA472 2SA236 2SA237
Abstract: SKS 700N B6C 470 V16 SU Electrical Characteristics Symbol Conditions min Electrical Data TAMBIENT = 35°C ; No overload Maximum DC current ID Maximum AC voltage (+/-10%) VAC DC Bus voltage VBUS PTOTAL Maximum stack power Stack power loss (TAMBIENT = 35°C) PLOSS Environnmental Data , Circuit Ordering No. Description 08785013 SKS 700N B6C 470 V16 SU Features Type R C , 700N B6C 470 V16 SU Dimensions This technical information specifies semiconductor devices but SEMIKRON
Original
P11/415
Abstract: 3.0M 3.0M 50M 700u 700u 500u 50u 1.0m 400u 400u 10 700n 120n 400n 400n 300n 800n 300n 300n g , ~g 20 35 10 15 15 15 15 20 igo~ 1.0m 50u 400n lOOn 700n 700n ~~g j 175 J 175 J 30 , ~:g 125 125 125 160 80 30 85 85 ~:gT TO-220~~ 700n 120n 400n 400n 40 175 J 175 J 175 J , 100u 100u 100u 50u 500u ~~g~ 400n lOOn ~gg~ 700n ~:g 85 100 200 150 150 150 150 ~:g j Short Form Catalog
Original
2SB554 2SB554R B0346 KT818G SM2184 B0744C KT818 b0912 B05460 2SA1041 BOT88F MJ15002 2SA908 2SA971
Abstract: 6OOn0r 300nt 350nt 80m 35Om0 10mA 55 3.2 1 4p 55nt P-FA ftp uli 2sa458 6.0M 10OOn 700n 700n 1 50m 1.0 0 1Om0 60 P-A Of 85j R0107b 3# 2sa459 6.0M 1000n 700n 700n 150m 1.0 0 1Om0 120 P-A Ge , 85J TO 5 19# 2SA406 9.00M 47On0t 700n 270nt 200m 1.0 0 1Om0 50 5.0 15p P-A Gp 85 T05 20# 2SC36 , 2OOm0 20 A N Gp 85J TO 5 26# 2SA326 10.0M 85n 2.3u 700n 80m 1.0 0 8Om0 60 13p P-A Gp 85J T01 , .50 0 2Om0 40 1.5 2Od0 N-A Gp 85j T01 34# bc100 10.0MS 700n 500n 900n 500n 2.5 0* 20 0 1Om0 40 160 -
OCR Scan
2SC287 2N709 ST1694 PMT222 NS075 LM 230N
Abstract: 10mA 55 3.2 1 4p 55nt P-FA ftp uli 2sa458 6.0M 10OOn 700n 700n 1 50m 1.0 0 1Om0 60 P-A Of 85j R0107b 3# 2sa459 6.0M 1000n 700n 700n 150m 1.0 0 1Om0 120 P-A Ge 85j R0107b 4# asy32 6.00MSA , 1.0 0 1Om0 150 0 4.0 12p 1.7n P-A G 85J TO 5 19# 2SA406 9.00M 47On0t 700n 270nt 200m 1.0 0 1Om0 50 , # 2SC91H 10.om .10(1 120m .30 0 2OOm0 20 A N Gp 85J TO 5 26# 2SA326 10.0M 85n 2.3u 700n 80m 1.0 0 , .om 600n 400n 300n 120m .50 0 2Om0 40 1.5 2Od0 N-A Gp 85j T01 34# bc100 10.0MS 700n 500n 900n 500n 2.5 -
OCR Scan
5U100 MSP90 028A5 BLY95 B3617 B3541
Abstract: 6OOn0r 300nt 350nt 80m 35Om0 10mA 55 3.2 1 4p 55nt P-FA ftp uli 2sa458 6.0M 10OOn 700n 700n 1 50m 1.0 0 1Om0 60 P-A Of 85j R0107b 3# 2sa459 6.0M 1000n 700n 700n 150m 1.0 0 1Om0 120 P-A Ge , 85J TO 5 19# 2SA406 9.00M 47On0t 700n 270nt 200m 1.0 0 1Om0 50 5.0 15p P-A Gp 85 T05 20# 2SC36 , 2OOm0 20 A N Gp 85J TO 5 26# 2SA326 10.0M 85n 2.3u 700n 80m 1.0 0 8Om0 60 13p P-A Gp 85J T01 , .50 0 2Om0 40 1.5 2Od0 N-A Gp 85j T01 34# bc100 10.0MS 700n 500n 900n 500n 2.5 0* 20 0 1Om0 40 160 -
OCR Scan
2N5017 2SD2350 CP405 1711-1602 MHT5907 MHT5908
Abstract: SKS 700N B6C 470 V16 Characteristics Symbol Conditions min. typ. max. Unit 700 A 604 907 A 549 1099 A 1600 V Electrical Data Id Tamb = 45°C no , . 2500 V SKS 700N B6C 470 V16 Preliminary Data it (di/dt)cr Tvj = 25°C 1125 kA2s , '" 18.11.2008 1 SKS 700N B6C 470 V16 Fig. 1 Maximal overload factor vs nom current and ovl duration , (j-a) 2 Rev. 9 â'" 18.11.2008 © by SEMIKRON SKS 700N B6C 470 V16 Note: Stack design may SEMIKRON
Original
Abstract: P-FA ftp uli 2sa458 6.0M 10OOn 700n 700n 1 50m 1.0 0 1Om0 60 P-A Of 85j R0107b 3# 2sa459 6.0M 1000n 700n 700n 150m 1.0 0 1Om0 120 P-A Ge 85j R0107b 4# asy32 6.00MSA 22OOn0 5OOn0 1.4u , 1.0 0 1Om0 150 0 4.0 12p 1.7n P-A G 85J TO 5 19# 2SA406 9.00M 47On0t 700n 270nt 200m 1.0 0 1Om0 50 , # 2SC91H 10.om .10(1 120m .30 0 2OOm0 20 A N Gp 85J TO 5 26# 2SA326 10.0M 85n 2.3u 700n 80m 1.0 0 , .om 600n 400n 300n 120m .50 0 2Om0 40 1.5 2Od0 N-A Gp 85j T01 34# bc100 10.0MS 700n 500n 900n 500n 2.5 -
OCR Scan
ge 142 GET113 2N25 2SB450 SFT121 SFT142
Abstract: 10mA 55 3.2 1 4p 55nt P-FA ftp uli 2sa458 6.0M 10OOn 700n 700n 1 50m 1.0 0 1Om0 60 P-A Of 85j R0107b 3# 2sa459 6.0M 1000n 700n 700n 150m 1.0 0 1Om0 120 P-A Ge 85j R0107b 4# asy32 6.00MSA , 1.0 0 1Om0 150 0 4.0 12p 1.7n P-A G 85J TO 5 19# 2SA406 9.00M 47On0t 700n 270nt 200m 1.0 0 1Om0 50 , # 2SC91H 10.om .10(1 120m .30 0 2OOm0 20 A N Gp 85J TO 5 26# 2SA326 10.0M 85n 2.3u 700n 80m 1.0 0 , .om 600n 400n 300n 120m .50 0 2Om0 40 1.5 2Od0 N-A Gp 85j T01 34# bc100 10.0MS 700n 500n 900n 500n 2.5 -
OCR Scan
2N1077 2N1076 2N1074 2sc196 BF208 2N1075
Abstract: P-FA ftp uli 2sa458 6.0M 10OOn 700n 700n 1 50m 1.0 0 1Om0 60 P-A Of 85j R0107b 3# 2sa459 6.0M 1000n 700n 700n 150m 1.0 0 1Om0 120 P-A Ge 85j R0107b 4# asy32 6.00MSA 22OOn0 5OOn0 1.4u , 1.0 0 1Om0 150 0 4.0 12p 1.7n P-A G 85J TO 5 19# 2SA406 9.00M 47On0t 700n 270nt 200m 1.0 0 1Om0 50 , # 2SC91H 10.om .10(1 120m .30 0 2OOm0 20 A N Gp 85J TO 5 26# 2SA326 10.0M 85n 2.3u 700n 80m 1.0 0 , .om 600n 400n 300n 120m .50 0 2Om0 40 1.5 2Od0 N-A Gp 85j T01 34# bc100 10.0MS 700n 500n 900n 500n 2.5 -
OCR Scan
A608 transistor pnp 2SC632 2SC631 FV918 2N1082 FK918
Abstract: 10mA 55 3.2 1 4p 55nt P-FA ftp uli 2sa458 6.0M 10OOn 700n 700n 1 50m 1.0 0 1Om0 60 P-A Of 85j R0107b 3# 2sa459 6.0M 1000n 700n 700n 150m 1.0 0 1Om0 120 P-A Ge 85j R0107b 4# asy32 6.00MSA , 1.0 0 1Om0 150 0 4.0 12p 1.7n P-A G 85J TO 5 19# 2SA406 9.00M 47On0t 700n 270nt 200m 1.0 0 1Om0 50 , # 2SC91H 10.om .10(1 120m .30 0 2OOm0 20 A N Gp 85J TO 5 26# 2SA326 10.0M 85n 2.3u 700n 80m 1.0 0 , .om 600n 400n 300n 120m .50 0 2Om0 40 1.5 2Od0 N-A Gp 85j T01 34# bc100 10.0MS 700n 500n 900n 500n 2.5 -
OCR Scan
NKT102 3. GERMANIUM npn 2T73 2sc85 2SC78 2SC77
Abstract: 0m 10m 100u 80u 80u 80u 80u 80u 400n 20u 20u 20u 700n 1 0m 700n 700n 700n 700n 1 Ou 1 Ou 10u 13 Solid State Devices
Original
2SC1504 BUX79 STS401 SML424 SML425 BU226 DTS801 DTS-801 2SD1017 2N6211 MJ3026 2SC1031 D44T3 D44T4
Abstract: P-FA ftp uli 2sa458 6.0M 10OOn 700n 700n 1 50m 1.0 0 1Om0 60 P-A Of 85j R0107b 3# 2sa459 6.0M 1000n 700n 700n 150m 1.0 0 1Om0 120 P-A Ge 85j R0107b 4# asy32 6.00MSA 22OOn0 5OOn0 1.4u , 1.0 0 1Om0 150 0 4.0 12p 1.7n P-A G 85J TO 5 19# 2SA406 9.00M 47On0t 700n 270nt 200m 1.0 0 1Om0 50 , # 2SC91H 10.om .10(1 120m .30 0 2OOm0 20 A N Gp 85J TO 5 26# 2SA326 10.0M 85n 2.3u 700n 80m 1.0 0 , .om 600n 400n 300n 120m .50 0 2Om0 40 1.5 2Od0 N-A Gp 85j T01 34# bc100 10.0MS 700n 500n 900n 500n 2.5 -
OCR Scan
CK721 SA5-37 2sa525 2SA37 2n1606 CK793
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