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IGP06N60TXKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN visit Digikey Buy
IXGH56N60A3 IXYS Corporation Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN visit Digikey Buy
SPA06N60C3 Infineon Technologies AG Power Field-Effect Transistor, 6.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULL PACK-3 visit Digikey Buy
IXFT36N60P IXYS Corporation Power Field-Effect Transistor, 36A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN visit Digikey Buy
IXFA16N60P3 IXYS Corporation Power Field-Effect Transistor, 16A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263AA, 3 PIN visit Digikey Buy
IXGH36N60B3C1 IXYS Corporation Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN visit Digikey Buy

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6n60 Datasheet

Part Manufacturer Description PDF Type
6N60 Unisonic Technologies 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET Original
6N-60 Inmet ATTENUATOR Scan
6N-60 TXC 7 x 5 mm SMD Seam Cxo Tyoe / 6N Series Scan
6N60-ATA3-T Unisonic Technologies 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET Original
6N-60F Inmet ATTENUATOR Scan
6N60L-ATA3-T Unisonic Technologies 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET Original
6N60L-BTA3-T Unisonic Technologies 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET Original

6n60

Catalog Datasheet MFG & Type PDF Document Tags

6n60

Abstract: 6n60 data ,000cap) FKS Label 3.0 ± 0.1 Note: All dimensions are in mm 7.7 ±0.2 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 33.0 ±0.2 0.6 +0.2 0.0 3.4 7.7 ±0.2 512.6 ± 1.0 ©2001 Fairchild
Fairchild Semiconductor
Original
6n60 data 6n60 equivalent imsys TO220 Semiconductor Packaging 6N60 datasheet 7103 TKLEE777 KA7812-AE IMSYS777 A710103105

6n60a

Abstract: 6n60b SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Normal 6N60-x-TA3-T 6N60-x-TF1-T 6N60-x-TF3-T Ordering Number Lead Free Plating 6N60L-x-TA3-T 6N60L-x-TF1-T 6N60L-x-TF3-T Halogen Free 6N60G-x-TA3-T 6N60G-x-TF1-T 6N60G-x-TF3-T Package TO-220 TO-220F1 TO-220F Pin Assignment 1 2 3 G D S , RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL 6N60-A 6N60-B Drain-Source , Drain-Source Breakdown Voltage SYMBOL 6N60-A 6N60-B Drain-Source Leakage Current Gate- Source Leakage
Unisonic Technologies
Original
6N60G 6n60a 6n60b MOSFET 6n60 power mosfet 6n60 6N60L TO-220F 6N60L 6N60- 6N60L- 6N60G- QW-R502-117

6n60a

Abstract: 6n60b .Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N60L-x-TA3-T 6N60G-x-TA3-T 6N60L-x-TF1-T 6N60G-x-TF1-T 6N60L-x-TF3-T 6N60G-x-TF3-T 6N60L-x-TM3-T 6N60G-x-TM3-T 6N60L-x-TN3-R 6N60G-x-TN3-R www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO , ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL 6N60-A 6N60-B , Drain-Source Breakdown Voltage SYMBOL 6N60-A 6N60-B Drain-Source Leakage Current Gate- Source Leakage
Unisonic Technologies
Original
6N60L TO-251

MOSFET 6n60

Abstract: SSP6N60 SSP6N55/6N60 FEATURES · Lower Ros · · · · · · (ON) N-CHANNEL POWER MOSFETS Improved , 322 SSP6N55/6N60 ELECTRICAL CHARACTERISTICS Symbol BVpss Characteristic Drain-Source Breakdown , . junction temperature sRS A M SU N G Electronics 323 SSP6N55/6N60 N-CHANNEL POWER MOSFETS , 324 SSP6N55/6N60 N-CHANNEL POWER MOSFETS t1 SQUARE W AVE PULSE DURATION (SECONDS) Maximum , /6N60 N-CHANNEL POWER MOSFETS V os, DR AIN -TO -SO UR CE V O L T A G E (VO LTS) Typical
-
OCR Scan
SSP6N60 SSP6N55/6N60 SSP6N55 SSP6N55/60

6n60c

Abstract: mosfet 6n60c ® SYMBOL  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 6N60L-TF3-T 6N60G-TF3-T TO-220F 6N60L-TF1-T 6N60G-TF1-T TO-220F1 6N60L-TMS-T 6N60G-TMS-T TO-251S 6N60L-TMS2-T 6N60G-TMS2-T TO-251S2 6N60L-TMS4-T 6N60G-TMS4-T TO-251S4 Note: Pin Assignment: G: Gate D: Drain S , UNISONIC TECHNOLOGIES CO., LTD 6N60-C Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60-C is a high voltage power MOSFET and is designed to have better characteristics
Unisonic Technologies
Original
6n60c mosfet 6n60c QW-R502-A50
Abstract: ® SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N60L-TA3-T 6N60G-TA3-T 6N60L-TF3-T 6N60G-TF3-T 6N60L-TF1-T 6N60G-TF1-T 6N60L-TF2-T 6N60G-TF2-T 6N60L-TF3T-T 6N60G-TF3T-T 6N60L-TM3-T 6N60G-TM3-T 6N60L-TMS-T 6N60G-TMS-T 6N60L-TN3-T 6N60G-TN3-T 6N60L-TN3-R 6N60G-TN3-R 6N60L-TQ2-T 6N60G-TQ2-T 6N60L-TQ2-R 6N60G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source , UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET ï Unisonic Technologies
Original

6n60a

Abstract: 6n60b 6N60-x-TA3-T 6N60L-x-TA3-T www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd , 6N60-A 6N60-B Drain-Source Voltage Gate-Source Voltage VDSS RATINGS 600 650 VGSS , CHARACTERISTICS SYMBOL Drain-Source Breakdown Voltage 6N60-A 6N60-B Forward Reverse Breakdown , UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as
Unisonic Technologies
Original
UTC6N60 DSA0025594 6n60 MOSFEt

6N-60

Abstract: 6N60-x-TA3-T 6N60L-x-TA3-T 6N60-x-TF3-T 6N60L-x-TF3-T www.unisonic.com.tw Copyright © 2008 , "ƒ, unless otherwise specified) PARAMETER SYMBOL 6N60-A 6N60-B Drain-Source Voltage VDSS , ) PARAMETER OFF CHARACTERISTICS SYMBOL Drain-Source Breakdown Voltage 6N60-A 6N60-B Forward , UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as
Unisonic Technologies
Original
Abstract: Free 6N60L-TA3-T 6N60G-TA3-T 6N60L-TF1-T 6N60G-TF1-T 6N60L-TF2-T 6N60G-TF2-T 6N60L-TF3-T 6N60G-TF3-T 6N60L-TM3-T 6N60G-TM3-T 6N60L-TN3-R 6N60G-TN3-R 6N60L-TN3-T 6N60G-TN3-T 6N60L-TQ2-R 6N60G-TQ2-R 6N60L-TQ2-T 6N60G-TQ2-T Note: Pin Assignment: G: Gate D: Drain S: Source 6N60L-TA3-T (1)Packing , UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is Unisonic Technologies
Original
Abstract: 6N60G-P-TA3-T 6N60L-P-TF1-T 6N60G-P-TF1-T 6N60L-P-TF2-T 6N60G-P-TF2-T 6N60L-P-TF3-T 6N60G-P-TF3-T 6N60L-P-TM3-T 6N60G-P-TM3-T 6N60L-P-TN3-T 6N60G-P-TN3-T 6N60L-P-TN3-R 6N60G-P-TN3-R 6N60L-P-TQ2-T 6N60G-P-TQ2-T 6N60L-P-TQ2-R 6N60G-P-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source , UNISONIC TECHNOLOGIES CO., LTD 6N60-P Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 6N60-P is a high voltage power MOSFET and is Unisonic Technologies
Original
6N60L-P-TA3-T QW-R502-969

6N60

Abstract: ssp6n SSP6N55/6N60 SSH6N55/6N60 FEATURES · · · · · · · Lower R d s (ON) Improved inductive ruggedness , 5 n , Starting TI = 2 5 `, C 448 ELECTRONICS SSP6N55/6N60 SSH6N55/6N60 ELECTRICAL , ), device add " A " su ffix to part num ber 449 ELECTRONICS SSP6N55/6N60 SSH6N55/6N60 N-CHANNEL , aturation C haracteristics M axim um S afe O p era tin g Area 450 ELECTRONICS SSP6N55/6N60 SSH6N55/6N60 N-CHANNEL POWER MOSFETS t1. S Q U A R E W A V E P U LS E D UR ATIO N (S E C O N D S
-
OCR Scan
ssp6n SSH6N55/6N60 SSH6N55 SSH6N60
Abstract: ® SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N60L-TA3-T 6N60G-TA3-T 6N60L-TF3-T 6N60G-TF3-T 6N60L-TF1-T 6N60G-TF1-T 6N60L-TF2-T 6N60G-TF2-T 6N60L-TF3T-T 6N60G-TF3T-T 6N60L-TMS-T 6N60G-TMS-T 6N60L-TQ2-T 6N60G-TQ2-T 6N60L-TQ2-R 6N60G-TQ2-R Note: Pin Assignment: G , UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics Unisonic Technologies
Original
Abstract: ® SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N60L-TA3-T 6N60G-TA3-T 6N60L-TF1-T 6N60G-TF1-T 6N60L-TF2-T 6N60G-TF2-T 6N60L-TF3-T 6N60G-TF3-T 6N60L-TF3T-T 6N60G-TF3T-T 6N60L-TM3-T 6N60G-TM3-T 6N60L-TN3-T 6N60G-TN3-T 6N60L-TN3-R 6N60G-TN3-R 6N60L-TQ2-T 6N60G-TQ2-T 6N60L-TQ2-R 6N60G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw , UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET ï Unisonic Technologies
Original

UTC6N60

Abstract: 6n60 data Package Lead Free Halogen Free 6N60L-TA3-T 6N60G-TA3-T TO-220 6N60L-TF1-T 6N60G-TF1-T TO-220F1 6N60L-TF3-T 6N60G-TF3-T TO-220F 6N60L-TM3-T 6N60G-TM3-T TO-251 6N60L-TN3-R 6N60G-TN3-R TO-252 Note: Pin Assignment , UNISONIC TECHNOLOGIES CO., LTD 6N60 6.2A, 600V N-CHANNEL POWER MOSFET 1 TO-251 1 TO-220 Power MOSFET DESCRIPTION 1 TO-220F 1 TO-220F1 The UTC 6N60 is a high voltage MOSFET and is designed , 1 of 6 QW-R502-117.E 6N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless
Unisonic Technologies
Original

6N60

Abstract: SSM6N55 _ 7 ~ -3 7 ^ / 2 SSM6N55/6N60 FEATURES Low Ros(on) at high voltage Improved inductive , S 3 2 D ( SSM6N55/6N60 ELECTRICAL CHARACTERISTICS Characteristic Symbol Type N-CHANNEL " , N D U C T O R INC - dF | 7^4142 0005321 1 SSM6N55/6N60 Vas-6.S V Vgs 10V 80p3 Plise , 7^4142 05322 3 | ~ SSM6N55/6N60 N-CHANNEL POWER MOSFETS - T " 3 ^ - 1 3 , M I C O N D U C T O R INC de 1 7 T b 414a GOGsaaa s r SSM6N55/6N60 N-CHANNEL POWER
-
OCR Scan
SSM6N55 SSM6N55/6N60 SSM6N60

8N65

Abstract: 1N60-A 1N60A-A 2N60-A 2N60L-A 3N60-A 4N60-A 5N60-A 6N60-A 7N60-A 8N60-A 10N60-A 12N60-A æ°å"å New Part Number 1N60 1N60A 2N60 2N60L 3N60 4N60 5N60 6N60 7N60 8N60 10N60 12N60 , -B 1N60A-B 2N60-B 2N60L-B 3N60-B 4N60-B 5N60-B 6N60-B 7N60-B 8N60-B 10N60-B 12N60-B æ°å"å
Unisonic Technologies
Original
8N65 IC-PPCN-110605 2011-J 1N60-B 1N65A 2N65L 10N65
Abstract: .Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N60L-TA3-T 6N60G-TA3-T 6N60L-TF1-T 6N60G-TF1-T 6N60L-TF2-T 6N60G-TF2-T 6N60L-TF3-T 6N60G-TF3-T 6N60L-TM3-T 6N60G-TM3-T 6N60L-TN3-R 6N60G-TN3-R 6N60L-TN3-T 6N60G-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source , UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to Unisonic Technologies
Original

SSS6N60

Abstract: ADE 443 TI SSS6N55/6N60 N-CHANNEL POWER MOSFETS FEATURES TO-270* â'¢ Low* Ros (O*» A 1 ffM Mff 1 M r4 a m 1 â'¢ â'¢ M m â'¢ m A A A A A A â'¢ improroo inductive ruggedness â'¢ Fas! switching times ^â'" â'¢ Rugged polysilicon gate cell structure â'¢ Lower Input capacitance â'¢ Extended safe , EUCTTONICS 443 SSS6N55/6N60 N-CHANNEL POWER MOSFETS ELECTRICAL CHARACTERISTICS , ) ReoeMive rabng Piisc «mdth Imrtvd by mux junction terioerature ELECTRONICS 444 SSS6N55/6N60 N-CHANNEL
-
OCR Scan
SSS6N55 SSS6N60 ADE 443 TI K300 SSS6N55/6N60 SSS6N5S6N60 SSSSN55 SSSSM60

6n60a

Abstract: 3N90 (on) Static Drain-Source On-State 6N60A - - 1.2 q VGS=10V, lo=3.0A Resistance (2) 6N60 - - 1.5 q , BV0SS Drain-Source Breakdown Voltage 6N60, 60A 600 - - V VQS=0V, lD =250fiA vgsmm Gate Threshold , Drain-to-Source 6N60R, 60AR 500 mJ See Fig. 5, page 22 for test circuit. Avalanche Energy 3N90R,90AR
-
OCR Scan
IXTP6N60 IXTM6N60 3N90

6n60a

Abstract: 6n60 =125°C RoS(on) Statìc Drain-Source On-State 6N60A - - 1.2 Q VGS=10V, lD =3.0A Resistance (2) 6N60 - - 1.5 Q , . Max. Units Test Conditions BV0SS Drain-Source Breakdown Voltage 6N60, 60A 600 - - V VGS=0V, lD , 6N60R, 60AR 500 mJ See Fig. 5, page 22 for test circuit. Avalanche Energy 3N90R,90AR THERMAL
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OCR Scan
600 volt n channel power mosfet

6N60E

Abstract: ti N60 SSP6N55/6N60 FEATURES · Lower Ros · · · · · · (ON) N-CHANNEL POWER MOSFETS Improved , 322 SSP6N55/6N60 ELECTRICAL CHARACTERISTICS Symbol BVpss Characteristic Drain-Source Breakdown , . junction temperature sRS A M SU N G Electronics 323 SSP6N55/6N60 N-CHANNEL POWER MOSFETS , 324 SSP6N55/6N60 N-CHANNEL POWER MOSFETS t1 SQUARE W AVE PULSE DURATION (SECONDS) Maximum , /6N60 N-CHANNEL POWER MOSFETS V os, DR AIN -TO -SO UR CE V O L T A G E (VO LTS) Typical
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OCR Scan
6N60E ti N60 SD 10 N60 PHP6N60E PHB6N60E T0220AB SQT404

TP6N60

Abstract: 6N60 MOTOROLA TECHNICAL DATA SEM ICONDUCTOR M T H 6N 55 M T H 6 N 60 M TM 6N60 TM O S POWER FETs 6 AMPERES rDS(on) = 1-2 OH M S 550 and 600 VOLTS Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TM OS These TM O S Pow er FETs are desig n ed fo r h ig h vo ltag e , high speed p o w e r sw itch in g a p p lica tio n s such as sw itch in g regulators , ) IDSS - - 0.2 1 V (B R )D S S 550 600 V dc M TH 6N55 M TH 6N60 CASE 3 40-02 T O -2 18 A C S ym b o l M
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OCR Scan
TP6N60 MTP6N60
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