500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

6c1 diode

Catalog Datasheet MFG & Type PDF Document Tags

6c1 diode

Abstract: marking code diode R1 package, designed for switching applications requiring an extremely low leakage diode. SOT-323 CASE , : CODE: CODE: 6C1 61A 61C 61S MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage SYMBOL , -65 to +150 °C JA 455 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless , ) ANODE D2 2) CATHODE D1 3) ANODE D1, CATHODE D2 MARKING CODE: 6C1 MARKING CODE: 61A MARKING
Central Semiconductor
Original

6c1 diode

Abstract: marking r2 diode surface mount package, designed for switching applications requiring an extremely low leakage diode , MARKING SYMBOL VR VRRM IF IFRM IFSM IFSM PD TJ, Tstg JA CODE: CODE: CODE: CODE: 6C1 , °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST , ) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: 6C1 MARKING CODE: 61A MARKING
-
Original

diode code 61a

Abstract: 6c1 diode surface mount package, designed for switching applications requiring an extremely low leakage diode , VR VRRM IF IFRM IFSM IFSM PD TJ, Tstg JA CODE: CODE: CODE: CODE: 6C1 61A 61C 61S 75 100 250 , Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER DIODE: (TA , CODE: 1) Anode 2) NC 3) Cathode MARKING CODE: 6C1 CMSD6001A LEAD CODE: 1) Cathode D2 2) Cathode D1 3
Central Semiconductor
Original
diode code 61a 6c1 diode marking 6c1 6c1 sot-323 marking code DIODE R3 C A MARKING CODE CMSD6001 CMSD6001C CMSD6001S
Abstract: diode. SOT-323 CASE â'¢ Device is Halogen Free by design CMSD6001: CMSD6001A: CMSD6001C , MARKING CODE: CODE: CODE: CODE: 6C1 61A 61C 61S SYMBOL VR VRRM 100 V IF 250 , 275 mW -65 to +150 °C 455 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA , ) Anode D1, Cathode D2 MARKING CODE: 6C1 MARKING CODE: 61A MARKING CODE: 61C MARKING CODE: 61S -
Original

VPS05604

Abstract: C4 marking diode BAT 18-04S Silicon PIN Diode Preliminary data 4 5 Low-loss VHF / UHF switch above 10 MHz 6 PIN diode with low forward resistance 2 3 1 C1/A2 C3 5 VPS05604 A4 , BAT 18-04S AVs Pin Configuration Package 1=A1 2=C2 3=A3/C4 4=A4 5=A3 6=C1/A2 SOT-363 Maximum Ratings Parameter Symbol Diode reverse voltage VR 35 V Forward current IF , V, TA = 60 °C Forward voltage IF = 50 mA AC characteristics Diode capacitance VR = 20 V, f = 1
Infineon Technologies
Original
C4 marking diode DIODE A3 A4 marking diode diode marking a4 MARKING 3A3 A3 DIODE EHA07464 100MH EHD07019 EHD07020
Abstract: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Unit V ^RM 200 , Symbol Unit Values min. typ. max. DC characteristics per Diode Breakdown voltage V , = 70 V, Ta = 150 °C - - 50 AC characteristics per Diode Diode capacitance PF cD -
OCR Scan

MARKING 74s

Abstract: PF 7004S =C2 Package 3/6=C1/A2 SOT-363 Maximum Rat ngs Parameter Diode reverse voltage Forward current Surge forward , SIEMENS Silicon Schottky Diode Array 4 5 BAS 70-04S · General-purpose diode for high-speed switching · Circuit protection · Voltage clamping · High-level detecting and mixing n y W C 1/A 2 è 2 , 410 750 1000 l F = l f = AC characteristics Diode capacitance 1 / r = 0 V, f = 1 MHz , Diode capacitance C j = f ( I/r ) /= 1MHz Differential forward resistance rf = f (If) f = 10 kHz
-
OCR Scan
MARKING 74s PF 7004S Q62702-A3468 10//A

BAV70S

Abstract: 5a2 DIODE BAV 70S Silicon Switching Diode Array · For high speed switching applications · Common cathode , Configuration BAV 70S A4s 1/4=A1 Q62702-A1097 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage VR 70 Peak reverse voltage VRM , . Unit max. DC characteristics per Diode Breakdown voltage V(BR) I(BR) = 100 µA Forward , - - 50 AC characteristics per Diode Diode capacitance CD VR = 0 V, f = 1 MHz
Siemens
Original
BAV70S 5a2 DIODE

Marking W1s

Abstract: Marking w1s sot BAT68-08S Silicon Schottky Diode Array 4 5 6 For mixer application in the VHF/UHF range , =C3 5=C2 6=C1 SOT363 Symbol VR IF Ptot Tj Tstg Value 8 130 150 150 -55 . 150 Unit V mA mW °C Diode reverse voltage Forward current Total power dissipation TS = 92 °C Junction temperature Storage , AC Characteristics Diode capacitanceVR = 0 V, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz RF 10 CT 1 pF 2 Jan-28-2002 BAT68-08S Diode capacitance CT = (VR) f = 1MHz
Infineon Technologies
Original
Marking W1s Marking w1s sot diode array MARKING A3 EHA07193 EHA07291 EHD07103 EHD07104 EHD07102 EHD07101

Marking A7S sot

Abstract: SIEMENS Silicon Sw itching Diode Array · For high-speed switching applications · Connected in series · Internal (galvanic) isolated Diodes in one package BAV 99S Type BAV 99S Marking O rdering Code A7s Q62702-A1277 Pin C onfiguration 1/4 = A1 Package 2/5 = C2 3/6=C1/A2 SOT-363 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current , 70 v , - nA 30 50 r A = 150 °C AC characteristics Diode capacitance VR = 0 V, f= 1 MHz CD
-
OCR Scan
Marking A7S sot 100//A EHN0001 EHN00019
Abstract: /4=A1 2/5=C2 Package 3/6=C1/A2 SOT-363 Maximum Ratings Parameter Symbol Diode , SIEMENS BAS 70-04S Silicon Schottky Diode Array 4 â'¢ General-purpose diode for high-speed switching 6 > â'¢ Circuit protection ^ â'¢ Voltage clamping â'¢ High-level detecting , - - 100 ps - 30 - AC characteristics Diode capacitance CT VR = 0 V, f= 1 , Ta = Parameter l/p Diode capacitance CT = /" ( V/R) Differential forward resistance rf = f -
OCR Scan
A07287 EHB00045
Abstract: SIEMENS BAV 99S Silicon Switching Diode Array â'¢ For high-speed switching applications â'¢ Connected in series â'¢ Internal (galvanic) isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAV 99S A7s Q62702-A1277 1/4 = A1 2/5 = C2 Package 3/6=C1/A2 SOT-363 Maximum Ratings Parameter Symbol Diode reverse voltage Vr 70 Peak , V, Ta = 150 °C - - 50 â' â' 1.5 PF 6 ns AC characteristics Diode -
OCR Scan
EHB00075

5a2 DIODE

Abstract: diode a4s SIEMENS Silicon Switching Diode Array 1For high speed switching applications 1Common cathode , BAV 70S Marking Ordering Code A4s Q62702-A1097 lil 2 a c i/c a Ü' Package 3/6=C1/2 SOT-363 2/5=A2 Pin Configuration 1/4=A1 Maximum Ratings per Diode Parameter Diode reverse voltage Peak , otherwise specified Parameter Symbol min. DC characteristics per Diode Breakdown voltage /( B R ) BAV , per Diode Diode capacitance VR = 0 V , f = 1 MHz Reverse recovery time /F = 10 mA, /R = 10 mA, flL =
-
OCR Scan
diode a4s Diode Marking WA marking code diode wp

BAS70-04S

Abstract: VPS05604 BAS70-04S Silicon Schottky Diode Array 4 5 General-purpose diode for high-speed , ! Type Marking BAS70-04S 74s Pin Configuration 1=A1 2=C2 3=A3/C4 Package 4=A4 5=C3 6=C1/A2 SOT363 Maximum Ratings Value Parameter Symbol Diode reverse voltage VR 70 , 1000 - 1.6 2 pF - - 100 ps - 30 - AC characteristics Diode , 1.0 V 10 -3 1.5 0 20 40 60 V 80 VR VF Diode capacitance CT = f (VR
Infineon Technologies
Original
EHB00042 EHB00043 EHB00044

Pin diode G4S

Abstract: BAR63-04S BAR63-04S Silicon PIN Diode Preliminary data 4 5 PIN diode for high speed switching , Configuration Package 1=A1 2=C2 3=A3/C4 4=A4 5=C3 6=C1/A2 SOT363 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Forward current IF 100 mA Total power dissipation, TS = , mA AC characteristics Diode capacitance CT pF VR = 0 V, f = 100 MHz - 0.3 - VR , 10 -3 10 -2 s 10 0 tp 3 Aug-27-2001 BAR63-04S Diode capacitance CT =
Infineon Technologies
Original
Pin diode G4S EHD07139 EHD07138 EHD07171

BAT62-08S

Abstract: VPS05604 Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT363 Maximum Ratings Value Parameter Symbol Diode , BAT62-08S Silicon Schottky Diode Array Preliminary data 4 5 Low barrier diode for detectors up to GHz 6 frequencies 2 Tape loading orientation Top View 654 Marking on , Diode capacitance VR = 0 V, f = 1 MHz Case capacitance f = 1 MHz VR = 0 V, f = 10 kHz Series , 25 °C 10 20 30 V 40 VR VF Rectifier voltage Vo = f (Vi ) Diode capacitance
Infineon Technologies
Original
EHD07060 EHD07061 900MH EHD07063 EHD07062

C4 Package

Abstract: diode array MARKING A3 BAS 70-04S Silicon Schottky Diode Array 4 · General-purpose diode for high-speed switching , BAS 70-04S 74s Pin Configuration 1=A1 2=C2 3=A3/C4 Package 4=A4 5=C3 6=C1/A2 SOT-363 Maximum Ratings Value Parameter Symbol Unit Diode reverse voltage VR 70 V Forward , characteristics Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time IF = 25 mA Forward resistance , V 10 -3 1.5 0 20 40 60 V 80 VR VF Diode capacitance CT = f (VR
Infineon Technologies
Original
C4 Package

Marking w1s sot

Abstract: Device Marking A3 BAS 70-08S Silicon Schottky Diode Array General-purpose diode for high-speed switching 4 , Pin Configuration Package BAS 70-08S 78s 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Diode reverse voltage VR 70 V Forward current IF 70 , - 1.6 2 pF - - 100 ps - 30 - AC characteristics Diode capacitance , V 10 -3 1.5 0 20 40 60 V 80 VR VF Diode capacitance CT = f (VR
Infineon Technologies
Original
Device Marking A3 MARKING w1s sot363 top marking c3

EHA07182

Abstract: BAV70S BAV 70S Silicon Switching Diode Array 4 5 · For high-speed switching applications 6 · Internal (galvanic) isolated diode arrays in one package · Common cathode 2 3 1 VPS05604 C1/C2 , BAV 70S A4s Pin Configuration 1=A1 2=A2 3=C1/2 Package 4=A1 5=A2 6=C1/2 SOT-363 Maximum Ratings Parameter Symbol Diode reverse voltage VR 70 Peak reverse voltage VRM , voltage IF = 10 mA, tp = 20 ns AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse
Infineon Technologies
Original
EHA07182 marking 5a2 C2A26 6C12 EHB00066 EHB00068 EHB00065
Abstract: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4 â'¢ For mixer applications in , Code Pin Configuration BAT 68-08S 83s Package Q62702-A1344 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Diode reverse voltage VR 8 Forward current IF 130 , 390 500 CT - - 1 pF Rf - - 10 â"¦ AC characteristics Diode , 50 100 ˚C 150 TA ; TS VF Reverse current I R = f (VR) Diode capacitance CT = f -
Original
EHD07105
Showing first 20 results.