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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

6c1 diode

Catalog Datasheet MFG & Type PDF Document Tags

6c1 diode

Abstract: marking code diode R1 package, designed for switching applications requiring an extremely low leakage diode. SOT-323 CASE , : CODE: CODE: 6C1 61A 61C 61S MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage SYMBOL , -65 to +150 °C JA 455 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless , ) ANODE D2 2) CATHODE D1 3) ANODE D1, CATHODE D2 MARKING CODE: 6C1 MARKING CODE: 61A MARKING
Central Semiconductor
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6c1 diode

Abstract: marking r2 diode surface mount package, designed for switching applications requiring an extremely low leakage diode , MARKING SYMBOL VR VRRM IF IFRM IFSM IFSM PD TJ, Tstg JA CODE: CODE: CODE: CODE: 6C1 , °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST , ) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: 6C1 MARKING CODE: 61A MARKING
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diode code 61a

Abstract: 6c1 diode surface mount package, designed for switching applications requiring an extremely low leakage diode , VR VRRM IF IFRM IFSM IFSM PD TJ, Tstg JA CODE: CODE: CODE: CODE: 6C1 61A 61C 61S 75 100 250 , Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER DIODE: (TA , CODE: 1) Anode 2) NC 3) Cathode MARKING CODE: 6C1 CMSD6001A LEAD CODE: 1) Cathode D2 2) Cathode D1 3
Central Semiconductor
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diode code 61a 6c1 diode marking 6c1 6c1 sot-323 marking code DIODE R3 C A MARKING CODE CMSD6001 CMSD6001C CMSD6001S
Abstract: diode. SOT-323 CASE â'¢ Device is Halogen Free by design CMSD6001: CMSD6001A: CMSD6001C , MARKING CODE: CODE: CODE: CODE: 6C1 61A 61C 61S SYMBOL VR VRRM 100 V IF 250 , 275 mW -65 to +150 °C 455 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA , ) Anode D1, Cathode D2 MARKING CODE: 6C1 MARKING CODE: 61A MARKING CODE: 61C MARKING CODE: 61S -
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VPS05604

Abstract: C4 marking diode BAT 18-04S Silicon PIN Diode Preliminary data 4 5 Low-loss VHF / UHF switch above 10 MHz 6 PIN diode with low forward resistance 2 3 1 C1/A2 C3 5 VPS05604 A4 , BAT 18-04S AVs Pin Configuration Package 1=A1 2=C2 3=A3/C4 4=A4 5=A3 6=C1/A2 SOT-363 Maximum Ratings Parameter Symbol Diode reverse voltage VR 35 V Forward current IF , V, TA = 60 °C Forward voltage IF = 50 mA AC characteristics Diode capacitance VR = 20 V, f = 1
Infineon Technologies
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C4 marking diode DIODE A3 A4 marking diode diode marking a4 MARKING 3A3 A3 DIODE EHA07464 100MH EHD07019 EHD07020
Abstract: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Unit V ^RM 200 , Symbol Unit Values min. typ. max. DC characteristics per Diode Breakdown voltage V , = 70 V, Ta = 150 °C - - 50 AC characteristics per Diode Diode capacitance PF cD -
OCR Scan

MARKING 74s

Abstract: PF 7004S =C2 Package 3/6=C1/A2 SOT-363 Maximum Rat ngs Parameter Diode reverse voltage Forward current Surge forward , SIEMENS Silicon Schottky Diode Array 4 5 BAS 70-04S · General-purpose diode for high-speed switching · Circuit protection · Voltage clamping · High-level detecting and mixing n y W C 1/A 2 è 2 , 410 750 1000 l F = l f = AC characteristics Diode capacitance 1 / r = 0 V, f = 1 MHz , Diode capacitance C j = f ( I/r ) /= 1MHz Differential forward resistance rf = f (If) f = 10 kHz
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OCR Scan
MARKING 74s PF 7004S Q62702-A3468 10//A

BAV70S

Abstract: 5a2 DIODE BAV 70S Silicon Switching Diode Array · For high speed switching applications · Common cathode , Configuration BAV 70S A4s 1/4=A1 Q62702-A1097 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage VR 70 Peak reverse voltage VRM , . Unit max. DC characteristics per Diode Breakdown voltage V(BR) I(BR) = 100 µA Forward , - - 50 AC characteristics per Diode Diode capacitance CD VR = 0 V, f = 1 MHz
Siemens
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BAV70S 5a2 DIODE

Marking W1s

Abstract: Marking w1s sot BAT68-08S Silicon Schottky Diode Array 4 5 6 For mixer application in the VHF/UHF range , =C3 5=C2 6=C1 SOT363 Symbol VR IF Ptot Tj Tstg Value 8 130 150 150 -55 . 150 Unit V mA mW °C Diode reverse voltage Forward current Total power dissipation TS = 92 °C Junction temperature Storage , AC Characteristics Diode capacitanceVR = 0 V, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz RF 10 CT 1 pF 2 Jan-28-2002 BAT68-08S Diode capacitance CT = (VR) f = 1MHz
Infineon Technologies
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Marking W1s Marking w1s sot diode array MARKING A3 EHA07193 EHA07291 EHD07103 EHD07104 EHD07102 EHD07101

Marking A7S sot

Abstract: SIEMENS Silicon Sw itching Diode Array · For high-speed switching applications · Connected in series · Internal (galvanic) isolated Diodes in one package BAV 99S Type BAV 99S Marking O rdering Code A7s Q62702-A1277 Pin C onfiguration 1/4 = A1 Package 2/5 = C2 3/6=C1/A2 SOT-363 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current , 70 v , - nA 30 50 r A = 150 °C AC characteristics Diode capacitance VR = 0 V, f= 1 MHz CD
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OCR Scan
Marking A7S sot 100//A EHN0001 EHN00019
Abstract: /4=A1 2/5=C2 Package 3/6=C1/A2 SOT-363 Maximum Ratings Parameter Symbol Diode , SIEMENS BAS 70-04S Silicon Schottky Diode Array 4 â'¢ General-purpose diode for high-speed switching 6 > â'¢ Circuit protection ^ â'¢ Voltage clamping â'¢ High-level detecting , - - 100 ps - 30 - AC characteristics Diode capacitance CT VR = 0 V, f= 1 , Ta = Parameter l/p Diode capacitance CT = /" ( V/R) Differential forward resistance rf = f -
OCR Scan
A07287 EHB00045
Abstract: SIEMENS BAV 99S Silicon Switching Diode Array â'¢ For high-speed switching applications â'¢ Connected in series â'¢ Internal (galvanic) isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAV 99S A7s Q62702-A1277 1/4 = A1 2/5 = C2 Package 3/6=C1/A2 SOT-363 Maximum Ratings Parameter Symbol Diode reverse voltage Vr 70 Peak , V, Ta = 150 °C - - 50 â' â' 1.5 PF 6 ns AC characteristics Diode -
OCR Scan
EHB00075

5a2 DIODE

Abstract: diode a4s SIEMENS Silicon Switching Diode Array 1For high speed switching applications 1Common cathode , BAV 70S Marking Ordering Code A4s Q62702-A1097 lil 2 a c i/c a Ü' Package 3/6=C1/2 SOT-363 2/5=A2 Pin Configuration 1/4=A1 Maximum Ratings per Diode Parameter Diode reverse voltage Peak , otherwise specified Parameter Symbol min. DC characteristics per Diode Breakdown voltage /( B R ) BAV , per Diode Diode capacitance VR = 0 V , f = 1 MHz Reverse recovery time /F = 10 mA, /R = 10 mA, flL =
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OCR Scan
diode a4s Diode Marking WA marking code diode wp

BAS70-04S

Abstract: VPS05604 BAS70-04S Silicon Schottky Diode Array 4 5 General-purpose diode for high-speed , ! Type Marking BAS70-04S 74s Pin Configuration 1=A1 2=C2 3=A3/C4 Package 4=A4 5=C3 6=C1/A2 SOT363 Maximum Ratings Value Parameter Symbol Diode reverse voltage VR 70 , 1000 - 1.6 2 pF - - 100 ps - 30 - AC characteristics Diode , 1.0 V 10 -3 1.5 0 20 40 60 V 80 VR VF Diode capacitance CT = f (VR
Infineon Technologies
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EHB00042 EHB00043 EHB00044

Pin diode G4S

Abstract: BAR63-04S BAR63-04S Silicon PIN Diode Preliminary data 4 5 PIN diode for high speed switching , Configuration Package 1=A1 2=C2 3=A3/C4 4=A4 5=C3 6=C1/A2 SOT363 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Forward current IF 100 mA Total power dissipation, TS = , mA AC characteristics Diode capacitance CT pF VR = 0 V, f = 100 MHz - 0.3 - VR , 10 -3 10 -2 s 10 0 tp 3 Aug-27-2001 BAR63-04S Diode capacitance CT =
Infineon Technologies
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Pin diode G4S EHD07139 EHD07138 EHD07171

BAT62-08S

Abstract: VPS05604 Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT363 Maximum Ratings Value Parameter Symbol Diode , BAT62-08S Silicon Schottky Diode Array Preliminary data 4 5 Low barrier diode for detectors up to GHz 6 frequencies 2 Tape loading orientation Top View 654 Marking on , Diode capacitance VR = 0 V, f = 1 MHz Case capacitance f = 1 MHz VR = 0 V, f = 10 kHz Series , 25 °C 10 20 30 V 40 VR VF Rectifier voltage Vo = f (Vi ) Diode capacitance
Infineon Technologies
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EHD07060 EHD07061 900MH EHD07063 EHD07062

C4 Package

Abstract: diode array MARKING A3 BAS 70-04S Silicon Schottky Diode Array 4 · General-purpose diode for high-speed switching , BAS 70-04S 74s Pin Configuration 1=A1 2=C2 3=A3/C4 Package 4=A4 5=C3 6=C1/A2 SOT-363 Maximum Ratings Value Parameter Symbol Unit Diode reverse voltage VR 70 V Forward , characteristics Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time IF = 25 mA Forward resistance , V 10 -3 1.5 0 20 40 60 V 80 VR VF Diode capacitance CT = f (VR
Infineon Technologies
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C4 Package

Marking w1s sot

Abstract: Device Marking A3 BAS 70-08S Silicon Schottky Diode Array General-purpose diode for high-speed switching 4 , Pin Configuration Package BAS 70-08S 78s 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Diode reverse voltage VR 70 V Forward current IF 70 , - 1.6 2 pF - - 100 ps - 30 - AC characteristics Diode capacitance , V 10 -3 1.5 0 20 40 60 V 80 VR VF Diode capacitance CT = f (VR
Infineon Technologies
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Device Marking A3 MARKING w1s sot363 top marking c3

EHA07182

Abstract: BAV70S BAV 70S Silicon Switching Diode Array 4 5 · For high-speed switching applications 6 · Internal (galvanic) isolated diode arrays in one package · Common cathode 2 3 1 VPS05604 C1/C2 , BAV 70S A4s Pin Configuration 1=A1 2=A2 3=C1/2 Package 4=A1 5=A2 6=C1/2 SOT-363 Maximum Ratings Parameter Symbol Diode reverse voltage VR 70 Peak reverse voltage VRM , voltage IF = 10 mA, tp = 20 ns AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse
Infineon Technologies
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EHA07182 marking 5a2 C2A26 6C12 EHB00066 EHB00068 EHB00065
Abstract: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4 â'¢ For mixer applications in , Code Pin Configuration BAT 68-08S 83s Package Q62702-A1344 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Diode reverse voltage VR 8 Forward current IF 130 , 390 500 CT - - 1 pF Rf - - 10 â"¦ AC characteristics Diode , 50 100 ˚C 150 TA ; TS VF Reverse current I R = f (VR) Diode capacitance CT = f -
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EHD07105
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