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680nH

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Multilayer Chip Inductors LL2012-FHL Series Inductance Range: 1.5~680nH (E-12 Series , ~39.0nH) 1.0 ± 0.3 (47.0~100nH) 1.2 ± 0.3 (120.0~680nH) Marking of polarity L W T A · Marking of , Range · Inductance Tolerance · · · · · 1.5~680nH (E-12 Series) S ; ± 0.3nH (1.5~5.6nH) J ; ± 5% (6.8~680nH) Q (Typical) 22 ~ 65 (at 800MHz) Rated Current 50~300mA Inductance Temperature Coefficient + , % 120nH*±5% 150nH*±5% 180nH*±5% 220nH*±5% 270nH*±5% 330nH*±5% 390nH*±5% 470nH*±5% 560nH*±5% 680nH TOKO
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800MH 8719D 8720ES
Abstract: Multilayer Chip Inductors LL2012-FHL Inductance Range: 1.5~680nH (E-12 Series) Temperature Coefficient of L: + 250ppm/°C (for reference only) Length L (mm) 2.0 0.2 Width Thickness Electrode width W , ) 1.2 0.3 (120.0~680nH) Marking of polarity L W T A Marking of polarity: Marking is on the , / 40100 40100 1.5~680nH (E-12 Series) S ; 0.3nH (1.5~5.6nH) J ; 5% (6.8~680nH) Q (Typical) 22 ~ 65 , % 100nH5% 120nH*5% 150nH*5% 180nH*5% 220nH*5% 270nH*5% 330nH*5% 390nH*5% 470nH*5% 560nH*5% 680nH*5% Q TOKO
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Srf 2265 Srf+2265 8720D
Abstract: Multilayer Chip Inductors LL2012-FHL Series Inductance Range: 1.5~680nH (E-12 Series , ) 1.0 ± 0.3 (47.0~100nH) 1.2 ± 0.3 (120.0~680nH) Electrode widthA (mm) 0.5 ± 0.3 T A · Marking of polarity: Marking is on the upper surface of the unit. · : ELECTRICAL CHARACTERISTICS 1.5~680nH (E-12 Series) S ; ± 0.3nH (1.5~5.6nH) J ; ± 5% (6.8~680nH) K ; ± 10%, (3.3~680nH) · Q (Typical) 22 ~ 65 (at , 680nH*±5% ­ ­ ­ * at 50MHz, * at 25MHz ·Test Equipment & note () · L, Q : RF Impedance Analyzer TOKO
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Abstract: 7.96 All values up to 560nH on ceramic core ­ The values 680nH and 820nH either ceramic or ferrite , 50 40 30 20 10 1 10 100 f[MHz] 2.7nH 6.8nH 100nH 270nH 68nH Q 20 1000nH 15 10 5 1 10 f[MHz] 680nH , (MHz) 100 1000 680nH *All specifications are subject to change without notice. Wire Wound Chip , 1E+03 L (nH) 1E+02 680nH 560nH 100nH PAGE 4/4 1E+01 10nH 1E+00 1E+01 1E+02 1E+03 Sumida
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8753E
Abstract: Multilayer Chip Inductors LL2012-FHL Inductance Range: 1.5~680nH (E-12 Series) Temperature Coefficient of L: + 250ppm/°C (for reference only) Length L (mm) 2.0 0.2 Marking of polarity L , 1.5~680nH (E-12 Series) S ; 0.3nH (1.5~5.6nH) J ; 5% (6.8~680nH) Q (Typical) 22 ~ 65 (at 800MHz , (47.0~100nH) 1.2 0.3 (120.0~680nH) 1.5680nH (E-12 Series S; 0.3nH (1.55.6nH) J ; % , % 120nH*5% 150nH*5% 180nH*5% 220nH*5% 270nH*5% 330nH*5% 390nH*5% 470nH*5% 560nH*5% 680nH*5 TOKO
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LL2012-FHL5N6S LL2012-FHL4N7S LL2012-FHL3N9S LL2012-FHL3N3S LL2012-FHL2N7S LL2012-FHL2N2S
Abstract: Multilayer Chip Inductors LL2012-FHL Series Inductance Range: 1.5~680nH (E-12 Series) Temperature Coefficient of L: + 250ppm/°C (for reference only) FEATURES · Dual frequency standard for , ~100nH) 1.2 ± 0.3 (120.0~680nH) · Marking of polarity: Marking is on the upper Surface of the unit , 1.5~680nH (E-12 Series) S ; ± 0.3nH (1.5~5.6nH) J ; ± 5% (6.8~680nH) Q (Typical) 22 ~ 65 (at , 560nH*±5% 680nH*±5% Q Q Typical Min. L Toler- Freguency 100 100 300 500 800 1000 1800 (nH TOKO
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LL2012-FHL1N8S LL2012-FHL1N5S
Abstract: Multilayer Chip Inductors LL2012-FHL Inductance Range: 1.5~680nH (E-12 Series) Temperature Coefficient of L: + 250ppm/°C (for reference only) Length L (mm) 2.0 0.2 Width Thickness Electrode width W , ) 1.2 0.3 (120.0~680nH) Marking of polarity L W T A Marking of polarity: Marking is on the , /°C 40°C100°C 40°C100°C 1.5~680nH (E-12 Series) S ; 0.3nH (1.5~5.6nH) J ; 5% (6.8~680nH) Q , % 470nH*5% 560nH*5% 680nH*5% Q Q Typical Min. L Frequency 100 100 300 500 800 1000 1800 Tolerance (nH TOKO
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Abstract: Multilayer Chip Inductors LL2012-FHL Series/ Inductance Range/:1.5~680nH (E-12 Series , ) 0.50.3 0.85 0.3 (10.0~39.0nH) 1.0 0.3 (47.0~100nH) 1.2 0.3 (120.0~680nH) Marking of polarity , Inductance Tolerance 1.5~680nH (E-12 Series) S ; 0.3nH (1.5~5.6nH) J ; 5% (6.8~680nH) Q (Typical) 22 ~ 65 (at 800MHz) Rated Current 50~300mA Inductance Temperature , *5% 330nH*5% 390nH*5% 470nH*5% 560nH*5% 680nH*5% L (nH) 1.5 1.7 2.1 2.42 3.0 3.7 TOKO
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Abstract: Multilayer Chip Inductors LL2012-FHL Inductance Range: 1.5~680nH (E-12 Series) Temperature Coefficient of L: + 250ppm/°C (for reference only) Length L (mm) 2.0 0.2 Width Thickness Electrode width W , ) 1.2 0.3 (120.0~680nH) Marking of polarity: Marking is on the upper Surface of the unit , ~680nH (E-12 Series) S ; 0.3nH (1.5~5.6nH) J ; 5% (6.8~680nH) Q (Typical) 22 ~ 65 (at 800MHz) Rated , % 150nH*5% 180nH*5% 220nH*5% 270nH*5% 330nH*5% 390nH*5% 470nH*5% 560nH*5% 680nH*5% Q Q Typical Min TOKO
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ll2012fhl1n5s ll2012fhl10n LL2012-
Abstract: NOTES: REV ECN NO. DESCRIPTION APP/DATE B 3403 CHANGE PCB/VAR CAPS VB C 3465 REP 2pE CAPS W/TRIMMER ER D 4632 UPDATE BILL OF MATERIALS SEQ QTY RFM P/N DESCRIPTION REF DES REFERENCE/COMMENTS 1 1 400-0735-001 PCB (REV X3) PCB1 2 2 500-0003-020 CAPACITOR, 2.0pF C1,2 ±.25pF 3 2 N/A CHIP IND. 680nH L1,2 ± 10% 4 2 500-0248-001 CONN, COAX FLANGE MT. JACK J1,2 5 1 400-0533-001 SHIELD, BRASS SHLD1 , > LI 680nH CI 2,0pF 10 11 12 9 8 D.U.T. L2 680nH < J2 50 DHM C2 2,0pF RF Monolithics, inc. DALLAS -
OCR Scan
PX1004 1h44 capacitor 20PF 2U874 PX1004CDEMD PX10U 2-14-J
Abstract: 3.90nH 4.70nH 5.60nH 6.80nH 8.20nH 10.00nH 12.00nH 15.00nH 18.00nH 22.00nH 27.00nH 33.00nH 47.00nH 56.00nH 68.00nH 2.00nH 3.90nH 4.70nH 6.80nH 8.20nH 10.0nH 12.0nH 15.0nH 18.0nH 22.0nH 27.0nH 33.0nH 39.0nH 47.0nH 56.0nH 68.0nH 72.0nH 82.0nH 100nH 120nH 150nH 180nH 220nH 270nH 2.20nH 3.30nH 6.80nH 8.20nH 12.0nH 15.0nH 18.0nH 22.0nH 27.0nH 33.0nH 39.0nH Temperature Cambion
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Abstract: Qtpy at 800MHz - - D.C.R. ,max All values up to 560nH on ceramic core ­ The values 680nH , 1000nH 680nH 15 2200nH 2.7nH 560nH 10 1 10 100 1000 4700nH 10 5 1 100 , (nH) 2200nH 1000nH 1000 680nH 10 3.8nH 2.7nH 1 100 10 100 1000 f[MHz , current IDC 1E+04 4700nH 1E+03 680nH 560nH L (nH) 1E+02 100nH 1E+01 10nH 1E+00 Sumida
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2200nH
Abstract: ceramic core â'" The values 680nH and 820nH either ceramic or ferrite core â'" from 1000nH on ferrite , 270nH 30 20 20 1000nH 680nH 15 2200nH 2.7nH 560nH 10 1 10 100 1000 , 100 L [nH] L (nH) 2200nH 1000nH 1000 680nH 10 3.8nH 2.7nH 1 100 10 100 , dependence of direct current IDC 1E+04 4700nH 1E+03 680nH 560nH L (nH) 1E+02 100nH 1E+01 Sumida
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Abstract: OPIN- BIAS GND R2 3k 6 LBIAS = 680nH RBIAS = 5.9 * D1 CMDSH-3 *EXPOSED PADDLE , CHARACTERISTICS (Typical Application Circuit, VCC = +4.75V to +5.25V, RBIAS = 5.9, LBIAS = 680nH, TA = -40°C to , -20dBm, ZS = 75, RBIAS = 5.9, LBIAS = 680nH, fIN = 44MHz, ZL = 50 | 2pF, TA = +25°C. Typical values are , +5V, PRFIN = -20dBm, ZL = 50 | 2pF, RBIAS = 5.9, LBIAS = 680nH, insertion loss of balun subtracted , , LBIAS = 680nH, insertion loss of balun subtracted, TA = +25°C.) ISOLATION vs. FREQUENCY PSRR vs Maxim Integrated Products
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MAX3524 880MH MAX3524EVB 44-880MH
Abstract: 90 2/5/10/20 - - All values up to 560nH on ceramic core ­ The values 680nH and 820nH , 100 20 1000nH 680nH 15 2200nH 560nH 1000 4700nH 10 5 1 100 10 f[MHz , 1000nH 1000 10 680nH 3.8nH 2.7nH 1 100 10 100 1000 f[MHz] *All , 1E+03 680nH 560nH L (nH) 1E+02 100nH 1E+01 10nH 1E+00 1E+01 1E+03 1E+02 Sumida
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5508151 agilent series
Abstract: Multilayer Chip Inductors LL2012-FHL Series Inductance Range: 1.5~680nH (E-12) Temperature Coefficient of L: + 250ppm/°C (for reference only) FEATURES · New specifications · Dual frequency , ~680nH) 0.5 ± 0.3 W T · Marking of polarity: Marking is on the upper surface of the unit. · , Storage Temperature Range 1.5~680nH (E-12 Series) S ; ± 0.3nH (1.5~5.6nH) J ; ± 5% (6.8~680nH) K ; ± 10%, (3.3~680nH) 22 ~ 65 (at 800MHz) 50~300mA + 250ppm/°C - 40~+ 100°C - 40~+ 100°C · · TOKO
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LL2012-Fhlr68 LL2012-FHL6N8J LLV0603-FB LL2012 LL1608 LL1005 LLP1005 LLV0603
Abstract: : MP04995 Model: TB0888A Rev No: 1 D. MATCHING CIRCUIT: Ls2 = 560nH + 680nH Ls3 = 680nH + 470nH Golledge Electronics
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Abstract: LBIAS = 680nH RBIAS = 5.9 * D1 CMDSH-3 *EXPOSED PADDLE Pin Configuration appears at end of , CHARACTERISTICS (Typical Application Circuit, VCC = +4.75V to +5.25V, RBIAS = 5.9, LBIAS = 680nH, TA = -40°C to , -20dBm, ZS = 75, RBIAS = 5.9, LBIAS = 680nH, fIN = 44MHz, ZL = 50 | 2pF, TA = +25°C. Typical values are , +5V, PRFIN = -20dBm, ZL = 50 | 2pF, RBIAS = 5.9, LBIAS = 680nH, insertion loss of balun subtracted , , VCC = +5V, PRFIN = -20dBm, ZL = 50 | 2pF, RBIAS = 5.9, LBIAS = 680nH, insertion loss of balun Maxim Integrated Products
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10LUMAX
Abstract: LBIAS = 680nH RBIAS = 5.9 * D1 CMDSH-3 *EXPOSED PADDLE Pin Configuration appears at end of , Circuit, VCC = +4.75V to +5.25V, RBIAS = 5.9, LBIAS = 680nH, TA = -40°C to +85°C, unless otherwise , 5.9, LBIAS = 680nH, fIN = 44MHz, ZL = 50 | 2pF, TA = +25°C. Typical values are at VCC = +5V, unless , +5V, PRFIN = -20dBm, ZL = 50 | 2pF, RBIAS = 5.9, LBIAS = 680nH, insertion loss of balun subtracted , , VCC = +5V, PRFIN = -20dBm, ZL = 50 | 2pF, RBIAS = 5.9, LBIAS = 680nH, insertion loss of balun Maxim Integrated Products
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shuntresistor op amp closed-loop
Abstract: ATTENUATOR 5 OPINGND * BIAS 6 RBIAS = 5.9 LBIAS = 680nH R2 3k D1 CMDSH-3 *EXPOSED PADDLE , = +4.75V to +5.25V, RBIAS = 5.9, LBIAS = 680nH, TA = -40°C to +85°C, unless otherwise indicated , = 75, RBIAS = 5.9, LBIAS = 680nH, fIN = 44MHz, ZL = 50 | 2pF, TA = +25°C. Typical values are at VCC , kit as shown in Figure 1, VCC = +5V, PRFIN = -20dBm, ZL = 50 | 2pF, RBIAS = 5.9, LBIAS = 680nH , , LBIAS = 680nH, insertion loss of balun subtracted, TA = +25°C.) ISOLATION vs. FREQUENCY MAX3524toc10 Maxim Integrated Products
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Abstract: 3.90nH 4.70nH 5.60nH 6.80nH 8.20nH 10.00nH 12.00nH 15.00nH 18.00nH 22.00nH 27.00nH 33.00nH 47.00nH 56.00nH 68.00nH 2.00nH 3.90nH 4.70nH 6.80nH 8.20nH 10.0nH 12.0nH 15.0nH 18.0nH 22.0nH 27.0nH 33.0nH 39.0nH 47.0nH 56.0nH 68.0nH 72.0nH 82.0nH 100nH 120nH 150nH 180nH 220nH 270nH 2.20nH 3.30nH 6.80nH 8.20nH 12.0nH 15.0nH 18.0nH 22.0nH 27.0nH 33.0nH 39.0nH Temperature Johanson Technology
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L-07C4N7 L-14C68N Cl201210-1N5D L-07C27N L-07CR10 L-14CR12 201210-1N5D MLI01
Abstract: Multilayer Chip Inductors LL2012-FHL Inductance Range: 1.5~680nH (E-12 Series) Temperature Coefficient of L: + 250ppm/°C (for reference only) Length L (mm) 2.0 0.2 Width Thickness Electrode width W , ) 1.2 0.3 (120.0~680nH) Marking of polarity: Marking is on the upper Surface of the unit , ~680nH (E-12 Series) S ; 0.3nH (1.5~5.6nH) J ; 5% (6.8~680nH) Q (Typical) 22 ~ 65 (at 800MHz) Rated , % 150nH*5% 180nH*5% 220nH*5% 270nH*5% 330nH*5% 390nH*5% 470nH*5% 560nH*5% 680nH*5% Q Q Typical Min RF Micro Devices
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RF2945 LQFP-32 433MHZ 868MHZ BP60 C3247 LMX2316 433/868/915MH 915MH 433/868MH 433MH
Abstract: OPIN- BIAS GND R2 3k 6 LBIAS = 680nH RBIAS = 5.9 * D1 CMDSH-3 *EXPOSED PADDLE , CHARACTERISTICS (Typical Application Circuit, VCC = +4.75V to +5.25V, RBIAS = 5.9, LBIAS = 680nH, TA = -40°C to , -20dBm, ZS = 75, RBIAS = 5.9, LBIAS = 680nH, fIN = 44MHz, ZL = 50 | 2pF, TA = +25°C. Typical values are , +5V, PRFIN = -20dBm, ZL = 50 | 2pF, RBIAS = 5.9, LBIAS = 680nH, insertion loss of balun subtracted , , LBIAS = 680nH, insertion loss of balun subtracted, TA = +25°C.) ISOLATION vs. FREQUENCY PSRR vs RF Micro Devices
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SFE10,7ma 433mhz rx OOK ASK receiver AND TX 433mhz ASK transmitter 433mhz rf traNsmitter receiver 433mhz HBT 01 05G 905MH 868MH
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