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Part : Q67040-S4003A-2 Supplier : Infineon Technologies Manufacturer : Bristol Electronics Stock : 8,800 Best Price : - Price Each : -
Part : Q67040-S4257 Supplier : Infineon Technologies Manufacturer : Bristol Electronics Stock : 1,900 Best Price : - Price Each : -
Part : Q67040-S4257A104 Supplier : Infineon Technologies Manufacturer : Bristol Electronics Stock : 1,900 Best Price : - Price Each : -
Part : Q67040-S4359 Supplier : Infineon Technologies Manufacturer : Bristol Electronics Stock : 238 Best Price : - Price Each : -
Part : Q67040S4171A102 Supplier : Infineon Technologies Manufacturer : Bristol Electronics Stock : 814 Best Price : - Price Each : -
Part : Q67040S4183A Supplier : Infineon Technologies Manufacturer : Bristol Electronics Stock : 510 Best Price : - Price Each : -
Part : Q67040S4285A105 Supplier : Infineon Technologies Manufacturer : Bristol Electronics Stock : 4,400 Best Price : - Price Each : -
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67040-S

Catalog Datasheet MFG & Type PDF Document Tags

Transistor SMD SM 942

Abstract: Ordering Code Packaging S PD 30N 03 P -T 0 2 5 2 Q 67040-S 4144-A 2 Tape and Reel S PU 30N 03 P -T0251-3-1 Q 67040-S 4146-A 2 Pin 1 Pin 2 Pin 3 Tube G D S Maximum
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OCR Scan
Transistor SMD SM 942 30N03 P-T0252-3-1 G13377 P-T0263-3-2/D2PAK Q133777
Abstract: SPD 07N20 In fin e o n technologies Preliminary Data SIPMOS® Power Transistor Product Summary Features Drain-Source on-state resistance â'¢ Enhancement mode Continuous drain current â'¢ Avalanche rated V 200 Drain source voltage â'¢ N channel b 0.4 Q 7 ^ D S (o n ) A â'¢ d t/d f rated Type Package Ordering Code Packaging S P D 0 7N 20 P -T 0 2 5 2 Q 67040-S 4120 S P U 0 7N 20 P -T 0 251 Q 67040-S 4112-A 2 Pin 1 -
OCR Scan
SQT-89 D13377
Abstract: SPP 46N03 Infineon technologias SIPMOS® Power Transistor Features Product Summary â'¢ N channel Drain source voltage ^DS â'¢ Enhancement mode Drain-Source on-state resistance â'¢ Avalanche rated Continuous drain current ^DS(on) 0.015 n A 46 b V 30 â'¢ d v/df rated â'¢ 175"C operating temperature Type Package Ordering Code Pin 1 S P P 46N 03 P -T0220-3-1 Q 67040-S 4742-A 2 S PB 46N 03 P -T 0 2 6 3 -3 -2 Q 67040-S 4145-A 3 -
OCR Scan
G13371 P-T0220-3-1 D13377T
Abstract: B6-500/670-40SI Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I(O) Max.(A) Output Current22 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage1.5k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.280¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition) I(RM) Max.(A) Reverse Current @V(R) (V)(Test Condition) I(RM) Max.(A) Pk. Rev. Current @Temp. (øC) (Test Condition) Maximum Operating Temp (øC)175õ Package StyleModule-q Mounting StyleT American Microsemiconductor
Original
B6-500/670-40SI
Abstract: SPD 08P06P SPU 08P06P P re lim in ary Data SIPMOS® Power Transistor â'¢ P-Channel 3 / â'¢ Enhancement mode â'¢ Avalanche rated à V T95 P001 VT 95 PÛ0 0 â'¢ d v /d t rated â'¢ 175°C operating tem perature Pin 1 Type Vfes b f f D S io n i SPD08P06P -60 V -8.8 A 0.3 à Pin 2 Pin 3 G D S Package © VGS Vfes = -10 V P-T0252 Ordering Code Q67040-S4153-A2 P-T0251-3-1 SPU08P06P Q 67040-S4154-A2 Maximum Ratings , at Tj = 2 5 â'˜C, unless -
OCR Scan
D133574 SPD06P06P D13357 SP008P06P SP000P06P G133S60