NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Voltage Durability Cycles Connector Body Finish Page No. 50 4 -65oC to 165oC Bayonet 500 500 Nickel or Silver 10006/09/11/13 50 4 -65oC to 165oC Bayonet 500 500 Nickel or Silver 10009 50 4 -65oC to 165oC Bayonet 500 500 Nickel or Silver 10008/10/11/14 75 2 -65oC to 165oC Bayonet 500 500 Nickel or Silver 10007/09/12/13 75 2 -65oC to 165oC Bayonet 500 500 Nickel or Silver 10009 75 ... | Original |
1 pages, |
datasheet abstract |
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| Abstract: Capacity Input (%) Charge: 25mA x 16hrs at 20oC 1.3 1.2 0 to 65oC -20 to 65oC -40 to 65oC ... | Original |
1 pages, |
GP250BVH GP250BVH abstract |
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| Abstract: ) Charge: 4mA x 16hrs at 20oC 1.3 1.2 : : : : 0 to 65oC -20 to 65oC -40 to 65oC 1.1 1 ... | Original |
1 pages, |
GP40BVH GP40BVH abstract |
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| Abstract: Typical thermal resistance (greased) Maximum mounting torque Weight TSTG TJ RJC RCS -65OC to 150OC 150OC -65OC to 150OC 150OC 0.9OC/W Junction to case 0.5OC/W Junction to case 25~30 inch pounds 0.54 ounce ... | Original |
2 pages, |
SBR7045 SBR7035 SBR7035 abstract |
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| Abstract: -65OC to 150OC 150OC -65OC to 150OC 150OC 1.0OC/W Junction to case 0.5OC/W Junction to case 25~30 inch pounds ... | Original |
2 pages, |
SBR6045 SBR6040 SBR6035 SBR6035 abstract |
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| Abstract: 5082-0335 SILICON STEP RECOVERY DIODE DESCRIPTION: The ASI 5082-0335 is a Silicon Step Recovery Diode Designed as a X 8 Frequency Multiplier with X-Band Output Frequencies. FEATURES INCLUDE: PACKAGE STYLE 51 · Replacement for HP 5082-0335 · POUT = 30 mW min. @ 16 GHz (X 8) · Hermetic Coaxial Package MAXIMUM RATINGS IF 100 mA PDISS 2.3 W @ TC = 25 OC TJ -65OC to +150 OC T STG -65OC to +150 OC JC 75 OC/W CHARACTERISTICS SYMBOL ORDER CODE: ASI30257 ASI30257 TA = 25 OC ... | Original |
1 pages, |
step recovery diode datasheet abstract |
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| Abstract: 1N4148-1 1N4148-1 ESA QUALIFIED FEATURES · · · · Qualified to ESA/SCC 5101/023 Metallurgical Bond DO-35 DO-35 Package Hermetically Sealed Glass Package 1.53 / 2.28 12.7min MAXIMUM RATINGS Operating Temperature: Storage Temperature: Surge Current, 1.0us: Thermal Impedance: Thermal Resistance: Total Power Dissipation: Continuous D.C. Forward Current: -65oC to +175oC -65oC to +175oC 2.0A 25oC/W max. (See Note 4) 250oC/W max. 500mW 3.05 min 5.08 max 200mA 0.458 min 0.558 max ... | Original |
1 pages, |
1N4148-1 DO-35 1N4148-1 abstract |
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| Abstract: 5082-0810 SILICON STEP RECOVERY DIODE DESCRIPTION: The ASI 5082-0810 is a Silicon Step Recovery Diode Designed as a Frequency Multiplier with S-Band Output Frequencies. PACKAGE STYLE 51 FEATURES INCLUDE: · Replacement for HP 5082-0810 · POUT = 4 W typ. @ 4 GHz (X 2) · Hermetic Coaxial Package MAXIMUM RATINGS IF 100 mA PDISS 7.0 W @ TC = 25 OC TJ -65OC to +150 OC T STG -65OC to +150 OC JC 25 OC/W CHARACTERISTICS SYMBOL ORDER CODE: ASI30258 ASI30258 NONE TA = 25 ... | Original |
1 pages, |
datasheet abstract |
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| Abstract: One Inch Series Military Specified Meets MIL-PRF-5757/7 MIL-PRF-5757/7 General Characteristics No. of Poles: Dimensions: 4 Form C (4PDT) 1.06" Dia. x 1.34" (26.9 Dia. x 34.0 mm) 0.2 lbs Max (90.7 grams) Weight: Switching Characteristics Operate Time @ +25oC Release Time @ +25oC Bounce Time: 15 ms. Max 10 ms. Max 5 ms. Max Environmental Characteristics -65oC to +125oC 15g 10-2,000 Hz 100g Hermetic , 125oC 14 Min Dropout Voltage at -65oC 1.5 Coil Resistance ( at 25oC) 225-385. Mounting & ... | Original |
2 pages, |
5757 26YJGGK12SCV m5757 MIL-PRF-5757/7 MIL-PRF-5757/7 abstract |
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| Abstract: Operating temperature range -40oC to +65oC -40oC to +65oC -40oC to +65oC -40oC to +65oC -40oC to +65oC -40oC to +65oC -40oC to +65oC Storage temperature range -40oC to +70oC ... | Original |
4 pages, |
P270 CH-1728 BCAP0025 BCAP0005 Maxwell BCAP0005 BCAP0010 BCAP0005 abstract |
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| Abstract: TAN250A TAN250A RF POWER TRANSISTOR DESCRIPTION: The ASI TAN250A TAN250A is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. PACKAGE STYLE FEATURES INCLUDE: · Gold Metallization · Hermetic Package · Input/Output Matching MAXIMUM RATINGS IC 30 A VCB 60 V PDISS 575 W @ TC = 25 OC TJ -65 OC to +200 OC T STG -65 OC to +200 OC JC 0.30 OC/W CHARACTERISTICS SYMBOL TC = 25 OC TEST CONDITIONS BV CBO IC = 20 ... | Original |
1 pages, |
TACAN transistor TACAN TAN250A TAN250A abstract |
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| Abstract: 5082-2811 SCHOTTKY BARRIER DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-2811 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS I 20 mA V 15 V PDISS 250 mW @ TC = 25 OC TJ -65 OC to +200 OC T STG -65 OC to +200 OC CHARACTERISTICS SYMBOL NONE TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM VR IR = 10 uA IR ... | Original |
1 pages, |
UHF/VHF 5082-2811 datasheet abstract |
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| Abstract: HSCH5315 HSCH5315 BEAM LEAD SCHOTTKY DIODE BATCH MATCHED DESCRIPTION: The HSCH5315 HSCH5315 is a Medium Barrier Beam Lead Schottky Diode Designed for X-Band Mixer Applications that is Batch Matched for NF and ZIF. PACKAGE STYLE BL1 MAXIMUM RATINGS IF 25 mA VR 4.0 V PDISS 300 mW @ TA = 25 OC TJ -65 OC to +175 OC T STG -65 OC to +200 OC CHARACTERISTICS SYMBOL ORDER CODE: ASI30264 ASI30264 NONE TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS V ... | Original |
1 pages, |
HSCH5315 HSCH-5315 ASI30264 diode led ir HSCH5315 abstract |
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| Abstract: 5082-0001 SILICON PIN DIODE CHIP DESCRIPTION: The ASI 5082-0001 is a Silicon Dioxide Passivated PIN Diode Chip Designed for MIC Circuit Applications. PACKAGE STYLE 001A MAXIMUM RATINGS I 100 mA V 70 V PDISS 250 mW @ TC = 25 OC TJ -65 OC to +150 OC T STG -65 OC to +150 OC T SOLD t 1.0 MINUTE +300 OC CHIP = 0.020 X 0.020 X 0.011 INCHES TOP BOND CONTACT GOLD = 0.0025 INCHES BOTTOM CONTACT GOLD (FULL AREA) NONE CHARACTERISTICS SYMBOL TC ... | Original |
1 pages, |
datasheet abstract |
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| Abstract: VSK120 VSK120 SCHOTTKY RECTIFIER PACKAGE STYLE DO-41 DO-41 DESCRIPTION: The VSK120 VSK120 is a General Purpose Schottky Rectifier Designed for use in Standard, and Switching Power Supply Applications. Cathode Indicated by Polarity Band. MAXIMUM RATINGS I(AVG) 1.0 A @ TL = 90 OC V 20 V TJ -65 OC to +150 OC T STG -65 OC to +150 OC NONE CHARACTERISTICS SYMBOL TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL VR = 20 V IR TL = 100 C IFSM 10 IF = 100 mA I ... | Original |
1 pages, |
VSK120 VSK120 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| Temperature -65OC to 150OC 150OC 150OC 150OC Lead Temperature (Soldering, 10 sec.) 265OC 265OC 265OC 265OC Operating Ratings (Note 2 www.datasheetarchive.com/download/8491570-549660ZC/nsc00098-v1.doc |
National | 13/09/2000 | 284.5 Kb | DOC | nsc00098-v1.doc |
| :\ >) oc1hr 16 BYTE C www.datasheetarchive.com/download/88417518-845099ZC/an1151.zip (BLKMOV.MAP) |
STMicroelectronics | 20/10/2000 | 824.53 Kb | ZIP | an1151.zip |
| begin 666 XSI_verilog.tar.Z M'YV06*8D^6*GC)PT;-Z0&@H3+@P#)LP www.datasheetarchive.com/download/43392718-960537ZC/ver_ex.uu |
Xilinx | 05/09/1996 | 4001.98 Kb | UU | ver_ex.uu |
| begin 666 XSI_verilog.tar.Z M'YV06*8D^6*GC)PT;-Z0&@H3+@P#)LP www.datasheetarchive.com/download/18416238-958267ZC/ver_ex.uu |
Xilinx | 08/07/1996 | 4001.98 Kb | UU | ver_ex.uu |
| Cycling (-65oC/+150oC) Temperature cycling produced no failures at the XC readpoint of 100 cycles www.datasheetarchive.com/files/motorola/68k/pcn5628.txt |
Motorola | 13/06/2002 | 5.97 Kb | TXT | pcn5628.txt |