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HM1-6514B/883 Intersil Corporation 1KX4 STANDARD SRAM, 220ns, CDIP18, CERAMIC, DIP-18 ri Buy
HM1-6514/883 Intersil Corporation 1KX4 STANDARD SRAM, 320ns, CDIP18, CERAMIC, DIP-18 ri Buy
TPS65145PWPR Texas Instruments 4-CH LCD Bias w/ Fully Int. Pos. Charge Pump, 3.3V LDO Contr., 0.96A Min. Boost Ilim & Fault Detect 24-HTSSOP -40 to 85 ri Buy Buy

6514 TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: NPN TRANSISTOR ARRAY NJM6511 NJM6511,6512,6513,6514 The seven high breakdown voltage NPN Darlington-connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers. Their , Radio Co.,ML 7-133 NJM6511 NJM6511, 6512, 6513, 6514 ■ Electrical Characteristics (Ta=25°C) Parameter , ) 6514 Vm=9.5V, Ie=350mA Vm=13.5V, Ic=350mA — 0.8 1.2 1.2 1.7 Input Current(OFF) Iin(OU) Ic , €” — 2.7 Input Voltage Vin (on) VCE=2V Ic=300mA — — 3.0 V 6514 Ic=125mA Ic=200mA Ic ... OCR Scan
datasheet

2 pages,
102.02 Kb

NJM6511 6512 6513 TRANSISTOR 6514 cmos open collector array DDG471S 5-30V NJD6511 NJD6512 NJD6514 NJ*6513 NJD6513 TEXT
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Abstract: MPS6513 MPS6513 MPS6514 MPS6514 MPS65 MPS65Ì5_ PHILIPS INTERNATIONAL SbE 3> 711002t 00424^0 323 MPHIN AMPLIFIER TRANSISTOR T-27-Z/ T-27-Z/ General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 MPS6517 to MPS6519 MPS6519. QUICK REFERENCE DATA MPS6513 MPS6513 6514 6515 Collector-emitter voltage VCEO max. 30 25 , air CHARACTERISTICS MPS6513 MPS6513 6514 6515 Collector-emitter voltage VCEO max. 30 25 25 V , breakdown voltage MPS6513 MPS6513 6514 6515 IC = 0,5 mA;lB = 0 V(BR)CEO > 30 25 25 Emitter-base breakdown ... OCR Scan
datasheet

2 pages,
38.65 Kb

T2721 6515 transistor MPS65 MPS6514 MPS6515 MPS6517 MPS6519 LG IC 621 MPS6513 T-27-Z/ TEXT
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Abstract: gjR , , 6514 ■ Electrical Characteristics (Ta=25°C) Parameter Symbol Test Condition Min. Typ. Max. Unit , ) Vin=2.4V, Ic=350mA - 0.4 0.7 mA (ON) 6514 Vm=9.5V, Ic=350mA Vin=13.5V, Ic=350mA — 0.8 1.2 1.2 , Ic=125mA — — 5.0 6514 Ic=200mA Ic=275mA Ic=350mA — - 6.0 7.0 8.0 Input Capacitance Qn ... OCR Scan
datasheet

2 pages,
53.57 Kb

x8 diode 6512 6513 6514 TRANSISTOR cmos open collector array darlington array mp 6514 NJD6511 NJD6512 NJM6511 5-30V NJD6514 NJD6513 NJM65 NJM65 NJD6511 TEXT
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Abstract: blE ]> ■ bbS3 , MPS6513 MPS6513 6514 6515 Collector-emitter voltage VCEO max. 30 25 25 Co I lecto r- base vo Itage VCBO max. 40 , oc K/W MPS6513 MPS6513 6514 6515 V(BR)CEO > 30 25 25 V V(BR)EBO > 4,0 4,0 4,0 V 'CBO < 50 50 50 nA ... OCR Scan
datasheet

2 pages,
39.05 Kb

MPS6519 MPS6517 6514 MPS6515 MPS6514 MPS6513 6514 TRANSISTOR mps6513 TRANSISTOR TEXT
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Abstract: b^E ] ■ > bb53T31 Q Q S T T n A2T MPS6513 MPS6513 MPS6514 MPS6514 MPS6515 MPS6515 APX N AUER PHILIPS/DISCRETE V. AMPLIFIER TRANSISTOR General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 MPS6517 to MPS6519 MPS6519. QUICK REFERENCE DATA MPS6513 MPS6513 6514 6515 VCEO max , Ftot max. max. 30 6514 6515 25 25 V max. 40 V max. 4,0 V 100 , ambient in free air CHARACTERISTICS Tj = 25 °C unless otherwise specified MPS6513 MPS6513 6514 6515 ... OCR Scan
datasheet

2 pages,
52.89 Kb

MPS6513 TEXT
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Abstract: NJF6514 NJF6514 and NJF6515 NJF6515 Screened in reference to MIL-PRF-19500 MIL-PRF-19500 N-Channel, J-FET Depletion Mode Transistor DESCRIPTION The NJF6514 NJF6514 and NJF6515 NJF6515 are ideal for functioning as very high frequency (VHF) small , -206AF -206AF) Package APPLICATIONS / BENEFITS · · Low-power transistor. Leaded metal TO-72 package. MAXIMUM , dimensions on last page. PART NOMENCLATURE NJF N-Channel, J-FET 6514 Type Number Symbol ID IG , (1.37 + 0.3, -0.00 mm) before the seating plane of the transistor, maximum diameter leads shall be ... Microsemi
Original
datasheet

4 pages,
227.11 Kb

MS2N3821 NJF6514 NJF6515 MIL-PRF-19500 MX2N3821 TEXT
datasheet frame
Abstract: NJF6514 NJF6514 and NJF6515 NJF6515 N-Channel, J-FET Depletion Mode Transistor Screened in reference to MIL-PRF-19500 MIL-PRF-19500 DESCRIPTION The NJF6514 NJF6514 and NJF6515 NJF6515 are ideal for functioning as very high frequency , -72 (TO-206AF) Package APPLICATIONS / BENEFITS • • Low-power transistor. Leaded metal TO , page. PART NOMENCLATURE NJF 6514 N-Channel, J-FET SYMBOLS & DEFINITIONS Definition , 0.054 + 0.001, - 0.000 (1.37 + 0.3, - 0.00 mm) before the seating plane of the transistor, maximum ... Microsemi
Original
datasheet

4 pages,
227.86 Kb

NJF6514 NJF6515 TEXT
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Abstract: MT3S03AT MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT MT3S03AT VHF~UHF Band Low Noise Amplifier Applications · · Low noise figure: NF = 1.4dB (at f = 2 GHz) High gain: gain = 8dB (at f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction , 72.09 70.46 68.56 67.10 65.14 Mag. 0.027 0.040 0.051 0.062 0.074 0.086 0.098 0.110 0.123 0.136 0.148 ... Toshiba
Original
datasheet

6 pages,
339.07 Kb

14315 transistor 14315 MT3S03AT TEXT
datasheet frame
Abstract: 5962-9052501MQA 5962-9052501MQA 5962-9088801MRA 5962-9088801MRA 8406701RA 8406701RA 8405202QA 8405202QA MD82C84A/B MD82C84A/B MD82C88/B MD82C88/B MD82C89/B MD82C89/B Memory HM-6514 HM1-6514/883 HM1-6514B/883 HM1-6514B/883 HM-65162 HM-65162 2kx8 Asynchronous CMOS Static RAM HM1-65162/883 HM1-65162/883 HM1 , Modulators Counters Transistor Arrays Voltage Regulators Decoders Digital-to-Analog ... Intersil
Original
datasheet

8 pages,
677.19 Kb

TEXT
datasheet frame
Abstract: 2SC5094 2SC5094 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 2SC5094 VHF~UHF Band Low Noise Amplifier Applications · Low noise figure, high gain. · Unit: mm NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage , -78.3 6.514 101.4 0.077 64.1 0.495 -32.0 800 0.161 -87.5 5.094 92.6 ... Toshiba
Original
datasheet

7 pages,
238.89 Kb

2SC5094 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
! SIEMENS Small Signal Semiconductors ! BFP136W BFP136W ! Si NPN RF Bipolar Junction Transistor in SOT343 ! VCE = 1 V IC = 20 mA ! Common Emitter S-Parameters: September 1994 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.4581 -43.4 41.830 165.2 0.0106 -144.6 0.250 0.8597 -171.8 6.514 90.8 0.0437 22.2 0.4392 -150.8 0.300 0.8672 -174.7 5.456
/datasheets/files/infineon/ehdata/spar/bfp136w/x81v020m.s2p
Infineon 26/03/1996 3 Kb S2P x81v020m.s2p
which utilizes an array of six transistor (6T) memory cells for the most stable and lowest possible the Provisions of Paragraph 1.2.1. Full CMOS Design Six Transistor Memory Cell     HM-6514/883   1024 x 4 CMOS RAM     HM-6514B/883 HM-6514B/883
/datasheets/files/intersil/device_pages/device_hm-65642_883.html
Intersil 07/09/2006 16.96 Kb HTML device_hm-65642_883.html
! SIEMENS Small Signal Semiconductors ! BFR92W BFR92W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 6 V IC = 6 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8292 -3.5 15.857 175.9 0.0024 111.1 0.0587 55.3 0.6096 -30.1 0.500 0.3961 -110.9 6.514 103.5 0.0653 55.2 0.5605 -30.7
/datasheets/files/infineon/ehdata/spar/bfr92w/w06v06m0.s2p
Infineon 14/08/1996 2.78 Kb S2P w06v06m0.s2p
! SIEMENS Small Signal Semiconductors ! BFP181 BFP181 ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 8 V IC = 2 mA ! Common Emitter S-Parameters: August 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.9317 -9.8 6.542 171.9 0.0123 -14.8 6.514 167.9 0.0183 81.1 0.9861 -6.5 0.200 0.9159 -19.6 6.447 163.9 0.0242 78.4
/datasheets/files/siemens/ehdata/spar/bfp181/p38v02m0-v1.s2p
Siemens 08/08/1994 2.52 Kb S2P p38v02m0-v1.s2p
! SIEMENS Discrete & RF Semiconductors ! BFP405 BFP405 ! Si NPN RF SIEGET Grounded Emitter Transistor in SOT343 ! VCE = 2.5 V IC = 2 mA ! Common Emitter S-Parameters: February 1998 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9279 -2.6 0.200 0.9270 -6.9 6.491 173.3 0.0065 85.7 0.9941 -3.5 0.250 0.9244 -8.8 6.514
/datasheets/files/infineon/ehdata/spar/bfp405/1p2v52m0.s2p
Infineon 27/11/1998 3.03 Kb S2P 1p2v52m0.s2p
! SIEMENS Small Signal Semiconductors ! BFT93 BFT93 ! Si PNP RF Bipolar Junction Transistor in SOT23 ! VCE = -1.75 V IC = -2 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8824 -4.4 6.816 175.8 0.0075 -21.3 6.514 164.3 0.0370 78.1 0.9615 -10.7 0.100 0.8253 -41.5 6.093 151.5 0.0698 68.0
/datasheets/files/infineon/ehdata/spar/bft93/rf1v72m0.s2p
Infineon 13/08/1996 2.78 Kb S2P rf1v72m0.s2p
! SIEMENS Small Signal Semiconductors ! BFP420 BFP420 ! Si NPN RF SIEGET Grounded Emitter Transistor in SOT343 ! VCE = 4 V IC = 6 mA ! Common Emitter S-Parameters: January 1994 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8375 -1.1 17.930 178.4 0.0016 1.900 0.5041 -151.6 6.514 81.9 0.0669 37.2 0.4224 -59.0 2.000 0.5015 -155.6 6.210 79.6
/datasheets/files/siemens/ehdata/spar/bfp420/2p4v06m0.s2p
Siemens 09/08/1994 3.01 Kb S2P 2p4v06m0.s2p
! SIEMENS Small Signal Semiconductors ! BFP183 BFP183 ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 10 V IC = 6 mA ! Common Emitter S-Parameters: March 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8432 -2.9 16.864 177.7 0.0019 0.0626 36.8 0.5267 -41.8 0.800 0.5499 -145.2 6.514 93.9 0.0648 35.0 0.4965 -42.9 0.900
/datasheets/files/infineon/ehdata/spar/bfp183/p510v6m0.s2p
Infineon 29/09/1997 2.78 Kb S2P p510v6m0.s2p
! SIEMENS Discrete & RF Semiconductors ! BFY183 BFY183 ! Si NPN RF Bipolar Junction Transistor in MICRO-X ! VCE = 0.75 V IC = 20 mA ! Common Emitter S-Parameters: May 1997 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.4203 -15.7 32.798 174.5 0.0034 95.9 0.0355 33.6 0.2435 -76.7 0.500 0.7242 -168.5 6.514 91.0 0.0370 34.4 0.2106 -80.3
/datasheets/files/infineon/ehdata/spar/bfy183/xev7520m.s2p
Infineon 16/05/1997 2.78 Kb S2P xev7520m.s2p
! SIEMENS Small Signal Semiconductors ! BFS481 BFS481 ! Si NPN RF Bipolar Junction Transistor in SOT363 ! VCE = 3.5 V IC = 3 mA ! Common Emitter S-Parameters: October 1994 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9044 -1.3 9.036 179.0 0.0015 0.500 0.6850 -56.1 7.070 132.5 0.0513 63.2 0.8435 -19.0 0.600 0.6317 -64.5 6.514 125.8
/datasheets/files/siemens/ehdata/spar/bfs481/s33v53m0.s2p
Siemens 13/10/1994 3 Kb S2P s33v53m0.s2p