NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| MAX6514UKN035 | Maxim Integrated Products | IC SPECIALTY ANALOG CIRCUIT, PDSO5, MO-178AA, SOT-23, 5 PIN, Analog IC:Other | 
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| MAX6514UKP075-T | Maxim Integrated Products | IC SPECIALTY ANALOG CIRCUIT, PDSO5, MO-178AA, SOT-23, 5 PIN, Analog IC:Other |
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| MAX6514UKP015+ | Maxim Integrated Products | IC SPECIALTY ANALOG CIRCUIT, PDSO5, MO-178AA, SOT-23, 5 PIN, Analog IC:Other |
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| MAX6514UKP065+ | Maxim Integrated Products | IC SPECIALTY ANALOG CIRCUIT, PDSO5, MO-178AA, SOT-23, 5 PIN, Analog IC:Other |
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| MAX6514UKN045+T | Maxim Integrated Products | IC SPECIALTY ANALOG CIRCUIT, PDSO5, MO-178AA, SOT-23, 5 PIN, Analog IC:Other |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: blE ]> â- bbS3 , MPS6513 MPS6513 6514 6515 Collector-emitter voltage VCEO max. 30 25 25 Co I lecto r- base vo Itage VCBO max. 40 , oc K/W MPS6513 MPS6513 6514 6515 V(BR)CEO > 30 25 25 V V(BR)EBO > 4,0 4,0 4,0 V 'CBO < 50 50 50 nA ... | OCR Scan |
2 pages, |
MPS6519 MPS6517 MPS6515 MPS6514 MPS6513 MPS6513 abstract |
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| Abstract: MPS6513 MPS6513 MPS6514 MPS6514 MPS65 MPS65Ì5_ PHILIPS INTERNATIONAL SbE 3> 711002t 00424^0 323 MPHIN AMPLIFIER TRANSISTOR T-27-Z/ T-27-Z/ General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 MPS6517 to MPS6519 MPS6519. QUICK REFERENCE DATA MPS6513 MPS6513 6514 6515 Collector-emitter voltage VCEO max. 30 25 , CHARACTERISTICS MPS6513 MPS6513 6514 6515 Collector-emitter voltage VCEO max. 30 25 25 V Collector-base voltage VCBO , MPS6513 MPS6513 6514 6515 IC = 0,5 mA;lB = 0 V(BR)CEO > 30 25 25 Emitter-base breakdown voltage IE ... | OCR Scan |
2 pages, |
MPS6519 MPS6517 MPS6515 MPS6514 MPS6513 MPS65 6515 transistor T-27-Z/ MPS6513 abstract |
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| Abstract: NPN TRANSISTOR ARRAY NJM6511 NJM6511,6512,6513,6514 The seven high breakdown voltage NPN Darlington-connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers. Their , 7-133 NJM6511 NJM6511, 6512, 6513, 6514 â- Electrical Characteristics (Ta=25°C) Parameter Symbol Test , Current 6513 Ira(on) Vim=2.4V, Ic=350mA - 0.4 0.7 mA (ON) 6514 Vm=9.5V, Ie=350mA Vm=13.5V, Ic=350mA , Ic=200mA - - 2.4 6513 Ic=250mA - - 2.7 Input Voltage Vin (on) VCE=2V Ic=300mA - - 3.0 V 6514 ... | OCR Scan |
2 pages, |
NJM6511 NJD6512 NJD6511 DDG471S cmos open collector array 6513 TRANSISTOR 5-30V NJD6514 NJD6513 NJM6511 abstract |
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| Abstract: gjR , This Material Copyrighted By Its Respective Manufacturer NJM6511 NJM6511, 6512, 6513, 6514 â- Electrical , =20V, Ic=350mA - 1.1 1.7 Input Current 6513 IIN(on) Vin=2.4V, Ic=350mA - 0.4 0.7 mA (ON) 6514 , ) Vce=2V Ic=300mA - - 3.0 V Ic=125mA - - 5.0 6514 Ic=200mA Ic=275mA Ic=350mA - - 6.0 7.0 8.0 ... | OCR Scan |
2 pages, |
NJM6511 6512 6513 6514 TRANSISTOR cmos open collector array darlington array mp 6514 NJD6511 NJD6512 5-30V NJD6514 NJD6513 NJM65 NJM65 abstract |
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| Abstract: When the input signal transitions between the logic levels, both the P-channel pull-up transistor and the N-channel pull-down transistor in the input TTL to CMOS translator are partially turned on , 100 6 Calculated Measured 6.514 Capacitively Loaded Output CVF Current The preceding , mA. Figure 2. Ic vs Frequency for CY74FCT16244 CY74FCT16244 with one Output Changing slope = 6.514 Â ... | Original |
4 pages, |
CY74FCT16244T datasheet abstract |
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| Abstract: TOSHIBA 2SC5094 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 0 9 4 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF=1.8dB, |S2le|2 = 7.5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING MER* "H" 2 Type Name hEE Rank Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 10 V Emitter-Base Voltage , 0.392 -64.1 8.847 114.7 0.059 64.3 0.586 -31.8 600 0.248 -78.3 6.514 101.4 0.077 64.1 0.495 ... | OCR Scan |
5 pages, |
sc 7113 2SC5094 2SC5094 abstract |
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| Abstract: 2SC5094 2SC5094 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 2SC5094 VHF~UHF Band Low Noise Amplifier Applications · Low noise figure, high gain. · Unit: mm NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage , -78.3 6.514 101.4 0.077 64.1 0.495 -32.0 800 0.161 -87.5 5.094 92.6 ... | Original |
7 pages, |
2SC5094 2SC5094 abstract |
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| Abstract: TOSHIBA 2SC5094 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 0 9 4 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . NF = 1.8dB, |S2lel2 = 7.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING MER ~R-B" Type Name hEE Rank Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage vCBO 20 V Collector-Emitter Voltage vCEO 10 V , 0.037 68.5 0.783 400 0.392 -64.1 8.847 114.7 0.059 64.3 0.586 600 0.248 -78.3 6.514 101.4 0.077 ... | OCR Scan |
5 pages, |
2SC5094 2SC5094 abstract |
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| Abstract: TOSHIBA MT3S03AT MT3S03AT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AT MT3S03AT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIOS • Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) • High Gain : Gain = 8 dB (at f = 2 GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 3 U. M R U 1 TT 2 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 10 V Collector-Emitter Voltage vCEO 5 V , 0.323 133.53 2.49 67.10 0.256 67.93 0.043 -114.28 7.93 2000 0.320 131.09 2.40 65.14 0.269 66.91 0.044 ... | OCR Scan |
4 pages, |
working of IC 7486 MT3S03AT ic 8038 IC 7486 8250 ic pin working of ic 8038 MT3S03AT abstract |
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| Abstract: TOSHIBA 2SC5094 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 0 9 4 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF=1.8dB, |S2le|2 = 7.5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING Type Name Jj^^T hFE Rank MER- "H" 1 "H" 2 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 10 V , 114.7 0.059 64.3 0.586 -31.8 600 0.248 -78.3 6.514 101.4 0.077 64.1 0.495 -32.0 800 0.161 -87.5 ... | OCR Scan |
6 pages, |
2SC5094 2SC5094 abstract |
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| Type PDF 2N6500 2N6500 2N6500 2N6500 PPC Inc. PNP Transistor 2N6510 2N6510 2N6510 2N6510 PPC Inc. NPN Transistor 2N6511 2N6511 2N6511 2N6511 PPC Inc. NPN Transistor 2N6512 2N6512 2N6512 2N6512 PPC Inc. NPN Transistor 2N6513 2N6513 2N6513 2N6513 PPC Inc. NPN Transistor 2N6514 PPC Inc. NPN Transistor 2N6542 2N6542 2N6542 2N6542 PPC Inc. NPN Transistor 2N6543 2N6543 2N6543 2N6543 PPC Inc. NPN Transistor 2N6544 2N6544 2N6544 2N6544 PPC Inc. NPN Transistor www.datasheetarchive.com/files/microsemi/products/partno/2n65.htm |
Microsemi | 03/12/1999 | 18.48 Kb | HTM | 2n65.htm |
| Search Criteria: PartType = NPN Transistor, BVCBO = 350 Volts Part No Type Package Power (Watts) IC (Amps) BVCBO (Volts) Vceo (Volts) Vebo (Volts) 2N6235 2N6235 2N6235 2N6235 PPC NPN TO-66 STD 50 5 350 325 6 2N6512 2N6512 2N6512 2N6512 PPC NPN TO-3 STD 120 7 350 300 6 2N6514 PPC NPN TO-3 STD 120 7 350 300 6 www.datasheetarchive.com/files/microsemi/products/bat/npn/60_350.htm |
Microsemi | 04/01/1999 | 3.26 Kb | HTM | 60_350.htm |
| 2N6514 PartID: 23592 | Rev: 1/4/99 PPC Inc. Part Type: NPN Transistor Package: TO-3 (STD-Thru Hole) 120 Watts 7 Amps Maximum Ratings and Electrical www.datasheetarchive.com/files/microsemi/products/23592.htm |
Microsemi | 04/01/1999 | 5.71 Kb | HTM | 23592.htm |
| Search Criteria: PartType = NPN Transistor, Power = 120 Watt PartNo Data Sheet Pack Power (W) I C (A) B V(CBO) (V) V CEO (V) BV EBO (V) 2N6510 2N6510 2N6510 2N6510 TO-3 STD 120 7 250 200 6 2N6511 2N6511 2N6511 2N6511 TO-3 STD 120 7 300 250 6 2N6512 2N6512 2N6512 2N6512 TO-3 STD 120 7 6514 TO-3 STD 120 7 350 300 6 www.datasheetarchive.com/files/microsemi/products/npn/27_120.htm |
Microsemi | 07/12/1999 | 7.02 Kb | HTM | 27_120.htm |
| Search Criteria: PartType = NPN Transistor, B V(CBO) = 350 Volt PartNo Data Sheet Pack Power (W) I C (A) B V(CBO) (V) V CEO (V) BV EBO (V) 2N6235 2N6235 2N6235 2N6235 TO-66 STD 50 5 350 325 6 2N6512 2N6512 2N6512 2N6512 TO-3 STD 120 7 350 300 6 2N6514 TO-3 STD 120 7 350 300 6 www.datasheetarchive.com/files/microsemi/products/npn/60_350.htm |
Microsemi | 07/12/1999 | 5.24 Kb | HTM | 60_350.htm |
| 2N6514 (#23592) NPN Transistor Division PPC Inc. Datasheet (none) Mil-Spec (none) Prod-Class (none) Shipping (none) Qual Data (none) Absolute Maximum Ratings Symbol Max Unit Power Dissipation www.datasheetarchive.com/files/microsemi/products/23592-v1.htm |
Microsemi | 08/12/1999 | 8.45 Kb | HTM | 23592-v1.htm |
| Search Criteria: PartType = NPN Transistor, Power = 120 Watts Part No Type Package Power (Watts) IC (Amps) BVCBO (Volts) Vceo (Volts) Vebo (Volts) 2N6510 2N6510 2N6510 2N6510 PPC NPN TO-3 STD 120 7 250 200 6 2N6511 2N6511 2N6511 2N6511 PPC NPN TO-3 STD 120 7 300 250 6 2N6512 2N6512 2N6512 2N6512 PPC NPN TO-3 STD 120 7 350 300 6 2N6514 PPC NPN TO-3 STD 120 7 350 300 6 2N6513 2N6513 2N6513 2N6513 PPC NPN TO-3 STD 120 7 400 350 www.datasheetarchive.com/files/microsemi/products/bat/npn/27_120.htm |
Microsemi | 04/01/1999 | 4.43 Kb | HTM | 27_120.htm |
| . NPN Transistor 23592 2N6514 PPC Inc. NPN Transistor 23593 2N6542 2N6542 2N6542 2N6542 PPC Inc. NPN Transistor 23594 2N6543 2N6543 2N6543 2N6543 Division PARTTYPE Datasheet 23882 2N6029 2N6029 2N6029 2N6029 PPC Inc. PNP Transistor 23883 2N6030 2N6030 2N6030 2N6030 PPC Inc. PNP Transistor 23884 2N6031 2N6031 2N6031 2N6031 PPC Inc. PNP Transistor 23500 2N6032 2N6032 2N6032 2N6032 PPC Inc. NPN Transistor 23501 2N6033 2N6033 2N6033 2N6033 PPC Inc. NPN Transistor 24403 2N6040 2N6040 2N6040 2N6040 PPC Inc. PNP Transistor 24404 2N6041 2N6041 2N6041 2N6041 PPC Inc. PNP Transistor 24405 2N6042 2N6042 2N6042 2N6042 PPC Inc. PNP Transistor 24406 2N6043 2N6043 2N6043 2N6043 PPC Inc. NPN Transistor 24407 2N6044 2N6044 2N6044 2N6044 PPC Inc. NPN Transistor 24408 2N6045 2N6045 2N6045 2N6045 www.datasheetarchive.com/files/microsemi/products/partno/2n6.htm |
Microsemi | 30/12/1998 | 94.74 Kb | HTM | 2n6.htm |
| transistor (6T) memory cells for the most stable and lowest possible standby supply current over the full and is Fully Conformant Under the Provisions of Paragraph 1.2.1. Full CMOS Design Six Transistor Table HM-6514/883 1024 x 4 CMOS RAM HM-6514B/883 1024 x 4 CMOS RAM HM-65162/883 HM-65162/883 HM-65162/883 HM-65162/883 2K x 8 www.datasheetarchive.com/files/intersil/device_pages/device_hm-65642_883.html |
Intersil | 07/09/2006 | 16.96 Kb | HTML | device_hm-65642_883.html |
| ! SIEMENS Small Signal Semiconductors ! BFR183W BFR183W BFR183W BFR183W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 10 V IC = 1 mA ! Common Emitter S-Parameters: September 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG .5 2.200 0.6040 -174.6 1.177 59.0 0.1187 34.8 0.6514 -50.4 2.400 0.6053 178.5 1.105 54.2 0.1169 40.5 0.6514 -53.7 2.500 0.6012 174.9 1.064 51.8 0.1174 43.5 0.6507 -55.0 3 www.datasheetarchive.com/download/2325488-777341ZC/bfr183w.zip (W510V1M0.S2P) |
Spice Models | 29/07/2012 | 59.08 Kb | ZIP | bfr183w.zip |