NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

Direct from the Manufacturer

Part Manufacturer Description PDF Samples Ordering
HM1-6514/883 Intersil Corporation IC 1K X 4 STANDARD SRAM, 320 ns, CDIP18, CERAMIC, DIP-18, Static RAM ri Buy
HM1-6514B/883 Intersil Corporation IC 1K X 4 STANDARD SRAM, 220 ns, CDIP18, CERAMIC, DIP-18, Static RAM ri Buy
TPS65145RGERG4 Texas Instruments 4-CH LCD Bias w/ Fully Int. Pos. Charge Pump, 3.3V LDO Contr., 0.96A Min. Boost Ilim & Fault Detect 24-VQFN -40 to 85 ri Buy

6514 TRANSISTOR

Catalog Datasheet Results Type PDF Document Tags
Abstract: blE ]> - bbS3 , MPS6513 MPS6513 6514 6515 Collector-emitter voltage VCEO max. 30 25 25 Co I lecto r- base vo Itage VCBO max. 40 , oc K/W MPS6513 MPS6513 6514 6515 V(BR)CEO > 30 25 25 V V(BR)EBO > 4,0 4,0 4,0 V 'CBO < 50 50 50 nA ... OCR Scan
datasheet

2 pages,
39.05 Kb

MPS6519 MPS6517 MPS6514 mps6513 TRANSISTOR MPS6515 MPS6513 6514 TRANSISTOR datasheet abstract
datasheet frame
Abstract: MPS6513 MPS6513 MPS6514 MPS6514 MPS65 MPS65Ì5_ PHILIPS INTERNATIONAL SbE 3> 711002t 00424^0 323 MPHIN AMPLIFIER TRANSISTOR T-27-Z/ T-27-Z/ General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 MPS6517 to MPS6519 MPS6519. QUICK REFERENCE DATA MPS6513 MPS6513 6514 6515 Collector-emitter voltage VCEO max. 30 25 , CHARACTERISTICS MPS6513 MPS6513 6514 6515 Collector-emitter voltage VCEO max. 30 25 25 V Collector-base voltage VCBO , MPS6513 MPS6513 6514 6515 IC = 0,5 mA;lB = 0 V(BR)CEO > 30 25 25 Emitter-base breakdown voltage IE ... OCR Scan
datasheet

2 pages,
38.65 Kb

T2721 6515 transistor LG IC 621 MPS65 MPS6514 MPS6515 MPS6517 MPS6519 MPS6513 MPS6513 abstract
datasheet frame
Abstract: NPN TRANSISTOR ARRAY NJM6511 NJM6511,6512,6513,6514 The seven high breakdown voltage NPN Darlington-connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers. Their , 7-133 NJM6511 NJM6511, 6512, 6513, 6514 - Electrical Characteristics (Ta=25°C) Parameter Symbol Test , Current 6513 Ira(on) Vim=2.4V, Ic=350mA - 0.4 0.7 mA (ON) 6514 Vm=9.5V, Ie=350mA Vm=13.5V, Ic=350mA , Ic=200mA - - 2.4 6513 Ic=250mA - - 2.7 Input Voltage Vin (on) VCE=2V Ic=300mA - - 3.0 V 6514 ... OCR Scan
datasheet

2 pages,
102.02 Kb

NJM6511 6512 6513 TRANSISTOR 6514 cmos open collector array DDG471S NJ*6513 NJD6511 5-30V NJD6512 NJD6514 NJD6513 NJM6511 abstract
datasheet frame
Abstract: gjR , This Material Copyrighted By Its Respective Manufacturer NJM6511 NJM6511, 6512, 6513, 6514 - Electrical , =20V, Ic=350mA - 1.1 1.7 Input Current 6513 IIN(on) Vin=2.4V, Ic=350mA - 0.4 0.7 mA (ON) 6514 , ) Vce=2V Ic=300mA - - 3.0 V Ic=125mA - - 5.0 6514 Ic=200mA Ic=275mA Ic=350mA - - 6.0 7.0 8.0 ... OCR Scan
datasheet

2 pages,
53.57 Kb

x8 diode 6512 6513 6514 TRANSISTOR cmos open collector array darlington array mp 6514 NJD6511 NJD6512 NJM6511 5-30V NJD6514 NJD6513 NJM6511 abstract
datasheet frame
Abstract: NJF6514 NJF6514 and NJF6515 NJF6515 Screened in reference to MIL-PRF-19500 MIL-PRF-19500 N-Channel, J-FET Depletion Mode Transistor DESCRIPTION The NJF6514 NJF6514 and NJF6515 NJF6515 are ideal for functioning as very high frequency (VHF) small , ) Package APPLICATIONS / BENEFITS · · Low-power transistor. Leaded metal TO-72 package. MAXIMUM , on last page. PART NOMENCLATURE NJF N-Channel, J-FET 6514 Type Number Symbol ID IG RG , (1.37 + 0.3, -0.00 mm) before the seating plane of the transistor, maximum diameter leads shall be ... Original
datasheet

4 pages,
227.11 Kb

NJF6514 NJF6515 MIL-PRF-19500 MX2N3821 MS2N3821 NJF6514 abstract
datasheet frame
Abstract: When the input signal transitions between the logic levels, both the P-channel pull-up transistor and the N-channel pull-down transistor in the input TTL to CMOS translator are partially turned on , 100 6 Calculated Measured 6.514 Capacitively Loaded Output CVF Current The preceding , mA. Figure 2. Ic vs Frequency for CY74FCT16244 CY74FCT16244 with one Output Changing slope = 6.514 ­ ... Original
datasheet

4 pages,
51.83 Kb

CY74FCT16244T datasheet abstract
datasheet frame
Abstract: TOSHIBA 2SC5094 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 0 9 4 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . NF = 1.8dB, |S2lel2 = 7.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING MER ~R-B" Type Name hEE Rank Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage vCBO 20 V Collector-Emitter Voltage vCEO 10 V , 0.037 68.5 0.783 400 0.392 -64.1 8.847 114.7 0.059 64.3 0.586 600 0.248 -78.3 6.514 101.4 0.077 ... OCR Scan
datasheet

5 pages,
3274.77 Kb

2SC5094 2SC5094 abstract
datasheet frame
Abstract: TOSHIBA 2SC5094 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 0 9 4 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF=1.8dB, |S2le|2 = 7.5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING MER* "H" 2 Type Name hEE Rank Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 10 V Emitter-Base Voltage , 0.392 -64.1 8.847 114.7 0.059 64.3 0.586 -31.8 600 0.248 -78.3 6.514 101.4 0.077 64.1 0.495 ... OCR Scan
datasheet

5 pages,
341.27 Kb

sc 7113 2SC5094 2SC5094 abstract
datasheet frame
Abstract: for 6514, 2114, 9114, and 404S Types) · Common Data Input and Output · Memory Retention for Standby , Linearly at 12mW/°C to 200mW Device Dissipation Per Output Transistor Ta = Full Package Temperature Range ... OCR Scan
datasheet

4 pages,
124.34 Kb

2114 Ram pinout 18 MWS5114 MWS5114 abstract
datasheet frame
Abstract: MT3S03AT MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT MT3S03AT VHF~UHF Band Low Noise Amplifier Applications · · Low noise figure: NF = 1.4dB (at f = 2 GHz) High gain: gain = 8dB (at f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction , 72.09 70.46 68.56 67.10 65.14 Mag. 0.027 0.040 0.051 0.062 0.074 0.086 0.098 0.110 0.123 0.136 0.148 ... Original
datasheet

6 pages,
339.07 Kb

transistor 14315 MT3S03AT MT3S03AT abstract
datasheet frame

Datasheet Content (non pdf)

Abstract Saved from Date Saved File Size Type Download
Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
full CMOS RAM which utilizes an array of six transistor (6T) memory cells for the most stable and Paragraph 1.2.1. Full CMOS Design Six Transistor Memory Cell Low Standby Supply Current 100µA Low Datasheet(s): 8K x 8 Asynchronous CMOS Static RAM Related Devices Parametric Table HM-6514
www.datasheetarchive.com/files/intersil/device_pages/device_hm-65642_883-v1.html
Intersil 13/10/2005 16.98 Kb HTML device_hm-65642_883-v1.html
transistor (6T) memory cells for the most stable and lowest possible standby supply current over the full and is Fully Conformant Under the Provisions of Paragraph 1.2.1. Full CMOS Design Six Transistor Table HM-6514/883 1024 x 4 CMOS RAM HM-6514B/883 HM-6514B/883 HM-6514B/883 HM-6514B/883 1024 x 4 CMOS RAM HM-65162/883 HM-65162/883 HM-65162/883 HM-65162/883 2K x 8
www.datasheetarchive.com/files/intersil/device_pages/device_hm-65642_883.html
Intersil 07/09/2006 16.96 Kb HTML device_hm-65642_883.html
CMOS Memories CMOS Static RAMs CMOS PROMS CMOS Static RAMs Included in the Harris portfolio are CMOS Random Access Memory (RAM) ranging in size from 256-bit to 64K-bit. These memory devices boast very low power consumption as well as an extremely stable 6-transistor cell design. There are asynchronous and synchronous versions to support various design needs. These are available in commercial 7mA/MHz HM-6514 1K x 4 S 120ns 25µA 15µA 7mA/MHz 18-Pin PDIP S/883 S/883 S/883 S/883 120ns 50µA
www.datasheetarchive.com/files/harris/micro/upsrams.htm
Harris 15/08/1997 11.5 Kb HTM upsrams.htm
! SIEMENS Discrete & RF Semiconductors ! BFP405 BFP405 BFP405 BFP405 ! Si NPN RF SIEGET Grounded Emitter Transistor in SOT343 ! VCE = 2.5 V IC = 2 mA ! Common Emitter S-Parameters: February 1998 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9279 -0.3 6.603 179.5 0.0005 58.7 173.3 0.0065 85.7 0.9941 -3.5 0.250 0.9244 -8.8 6.514 172.1 0.0080 87.5 0.9926 -4.5
www.datasheetarchive.com/files/spicemodels/misc/s_parameter_cd/siemens/bfp405/1p2v52m0.s2p
Spice Models 29/07/2012 3.28 Kb S2P 1p2v52m0.s2p
No abstract text available
www.datasheetarchive.com/download/71093464-777349ZC/bfr92t.zip (T03V54M0.S2P)
Spice Models 29/07/2012 273.09 Kb ZIP bfr92t.zip
! SIEMENS Discrete & RF Semiconductors ! BFP405 BFP405 BFP405 BFP405 ! Si NPN RF SIEGET Grounded Emitter Transistor in SOT343 ! VCE = 2.5 V IC = 2 mA ! Common Emitter S-Parameters: February 1998 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9279 -0.3 6.603 179.5 0.0005 58.7 173.3 0.0065 85.7 0.9941 -3.5 0.250 0.9244 -8.8 6.514 172.1 0.0080 87.5 0.9926 -4.5
www.datasheetarchive.com/files/infineon/ehdata/spar/bfp405/1p2v52m0.s2p
Infineon 27/11/1998 3.03 Kb S2P 1p2v52m0.s2p
! SIEMENS Discrete & RF Semiconductors ! BFY280 BFY280 BFY280 BFY280 ! Si NPN RF Bipolar Junction Transistor in MICRO-X ! VCE = 2.5 V IC = 8 mA ! Common Emitter S-Parameters: May 1997 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.7621 -2.1 15.642 178.4 0.0012 94.6 -124.4 6.514 99.6 0.0524 45.7 0.6060 -33.8 1.000 0.4502 -131.3 5.957 95.7 0.0548 45.5
www.datasheetarchive.com/files/infineon/ehdata/spar/bfy280/xb2v58m0.s2p
Infineon 16/05/1997 2.78 Kb S2P xb2v58m0.s2p
! SIEMENS Small Signal Semiconductors ! BFP136W BFP136W BFP136W BFP136W ! Si NPN RF Bipolar Junction Transistor in SOT343 ! VCE = 1 V IC = 20 mA ! Common Emitter S-Parameters: September 1994 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.4581 -43.4 41.830 165.2 0.0106 72.9 0.250 0.8597 -171.8 6.514 90.8 0.0437 22.2 0.4392 -150.8 0.300 0.8672 -174.7 5.456 88.1
www.datasheetarchive.com/files/infineon/ehdata/spar/bfp136w/x81v020m.s2p
Infineon 26/03/1996 3 Kb S2P x81v020m.s2p
No abstract text available
www.datasheetarchive.com/download/56108147-145383ZC/bfr181t.zip (T3V502M0.S2P)
Infineon 08/09/2000 246.86 Kb ZIP bfr181t.zip
No abstract text available
www.datasheetarchive.com/download/89757102-145349ZC/bfp136w.zip (X81V020M.S2P)
Infineon 08/09/2000 202.32 Kb ZIP bfp136w.zip