500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
HM1-6514/883 Intersil Corporation 1KX4 STANDARD SRAM, 320ns, CDIP18, CERAMIC, DIP-18 visit Intersil
HM1-6514B/883 Intersil Corporation 1KX4 STANDARD SRAM, 220ns, CDIP18, CERAMIC, DIP-18 visit Intersil
TPS65140RGER Texas Instruments 4-CH LCD Bias w/ Fully Int. Pos. Charge Pump, 3.3V LDO Contr., 1.6A Min. Boost Ilim & Fault Detect 24-VQFN -40 to 85 visit Texas Instruments Buy
TPS65145PWPG4 Texas Instruments 4-CH LCD Bias w/ Fully Int. Pos. Charge Pump, 3.3V LDO Contr., 0.96A Min. Boost Ilim & Fault Detect 24-HTSSOP -40 to 85 visit Texas Instruments
LMH6514SQX/NOPB Texas Instruments 600 MHz, Digital Controlled, Variable Gain Amplifier 16-WQFN -40 to 85 visit Texas Instruments
TPS65143YFFR Texas Instruments LCD Bias with Integrated Gamma Reference for Notebook PCs, Tablet PCs and Monitors 56-DSBGA -40 to 85 visit Texas Instruments

6514 TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

NJD6513

Abstract: NJD6512 NPN TRANSISTOR ARRAY NJM6511,6512,6513,6514 The seven high breakdown voltage NPN Darlington-connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers. Their , Radio Co.,ML 7-133 NJM6511, 6512, 6513, 6514 â  Electrical Characteristics (Ta=25°C) Parameter , ) 6514 Vm=9.5V, Ie=350mA Vm=13.5V, Ic=350mA â'" 0.8 1.2 1.2 1.7 Input Current(OFF) Iin(OU) Ic , '" â'" 2.7 Input Voltage Vin (on) VCE=2V Ic=300mA â'" â'" 3.0 V 6514 Ic=125mA Ic=200mA Ic
-
OCR Scan
NJD6511 NJD6512 NJD6513 NJD6514 DDG471S NJ*6513 transistor 6512 6514 TRANSISTOR G0M714

MPS6513

Abstract: LG IC 621 MPS6513 MPS6514 MPS65Ì5_ PHILIPS INTERNATIONAL SbE 3> 711002t 00424^0 323 MPHIN AMPLIFIER TRANSISTOR T-27-Z/ General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 to MPS6519. QUICK REFERENCE DATA MPS6513 6514 6515 Collector-emitter voltage VCEO max. 30 25 , air CHARACTERISTICS MPS6513 6514 6515 Collector-emitter voltage VCEO max. 30 25 25 V , breakdown voltage MPS6513 6514 6515 IC = 0,5 mA;lB = 0 V(BR)CEO > 30 25 25 Emitter-base breakdown
-
OCR Scan
MPS6515 LG IC 621 6515 transistor T2721 5bti NECC-C-002 T-27-21 10JUA

NJD6513

Abstract: NJD6514 gjR , , 6514 â  Electrical Characteristics (Ta=25°C) Parameter Symbol Test Condition Min. Typ. Max. Unit , ) Vin=2.4V, Ic=350mA - 0.4 0.7 mA (ON) 6514 Vm=9.5V, Ic=350mA Vin=13.5V, Ic=350mA â'" 0.8 1.2 1.2 , Ic=125mA â'" â'" 5.0 6514 Ic=200mA Ic=275mA Ic=350mA â'" - 6.0 7.0 8.0 Input Capacitance Qn
-
OCR Scan
5-30V x8 diode cmos open collector array 6512 6513 darlington array NJM65 RJD6511 IJD65H 00G471S 7-134-N

mps6513 TRANSISTOR

Abstract: 6514 TRANSISTOR blE ]> â  bbS3 , MPS6513 6514 6515 Collector-emitter voltage VCEO max. 30 25 25 Co I lecto r- base vo Itage VCBO max. 40 , oc K/W MPS6513 6514 6515 V(BR)CEO > 30 25 25 V V(BR)EBO > 4,0 4,0 4,0 V 'CBO < 50 50 50 nA
-
OCR Scan
mps6513 TRANSISTOR mi 6514 6514

mps6514

Abstract: b^E ] â  > bb53T31 Q Q S T T n A2T MPS6513 MPS6514 MPS6515 APX N AUER PHILIPS/DISCRETE V. AMPLIFIER TRANSISTOR General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 to MPS6519. QUICK REFERENCE DATA MPS6513 6514 6515 VCEO max , Ftot max. max. 30 6514 6515 25 25 V max. 40 V max. 4,0 V 100 , ambient in free air CHARACTERISTICS Tj = 25 °C unless otherwise specified MPS6513 6514 6515
-
OCR Scan
53T31 S3T31

MS2N3821

Abstract: NJF6514 and NJF6515 Screened in reference to MIL-PRF-19500 N-Channel, J-FET Depletion Mode Transistor DESCRIPTION The NJF6514 and NJF6515 are ideal for functioning as very high frequency (VHF) small , -206AF) Package APPLICATIONS / BENEFITS · · Low-power transistor. Leaded metal TO-72 package. MAXIMUM , dimensions on last page. PART NOMENCLATURE NJF N-Channel, J-FET 6514 Type Number Symbol ID IG , (1.37 + 0.3, -0.00 mm) before the seating plane of the transistor, maximum diameter leads shall be
Microsemi
Original
MS2N3821 MX2N3821 T4-LDS-0296
Abstract: NJF6514 and NJF6515 N-Channel, J-FET Depletion Mode Transistor Screened in reference to MIL-PRF-19500 DESCRIPTION The NJF6514 and NJF6515 are ideal for functioning as very high frequency , -72 (TO-206AF) Package APPLICATIONS / BENEFITS â'¢ â'¢ Low-power transistor. Leaded metal TO , page. PART NOMENCLATURE NJF 6514 N-Channel, J-FET SYMBOLS & DEFINITIONS Definition , 0.054 + 0.001, - 0.000 (1.37 + 0.3, - 0.00 mm) before the seating plane of the transistor, maximum Microsemi
Original
MV2N3821

transistor 14315

Abstract: 14315 MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications · · Low noise figure: NF = 1.4dB (at f = 2 GHz) High gain: gain = 8dB (at f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction , 72.09 70.46 68.56 67.10 65.14 Mag. 0.027 0.040 0.051 0.062 0.074 0.086 0.098 0.110 0.123 0.136 0.148
Toshiba
Original
transistor 14315 14315

LC-064

Abstract: 7800302PA 5962-9052501MQA 5962-9088801MRA 8406701RA 8405202QA MD82C84A/B MD82C88/B MD82C89/B Memory HM-6514 HM1-6514/883 HM1-6514B/883 HM-65162 2kx8 Asynchronous CMOS Static RAM HM1-65162/883 HM1 , Modulators Counters Transistor Arrays Voltage Regulators Decoders Digital-to-Analog
Intersil
Original
LC-064 7800302PA HA1 transistor smd smd transistor HS4 7800302GC 5962-8671601EA MIL-PRF-38535 1-888-INTERSIL D-85737

2SC5094

Abstract: 2SC5094 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 VHF~UHF Band Low Noise Amplifier Applications · Low noise figure, high gain. · Unit: mm NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage , -78.3 6.514 101.4 0.077 64.1 0.495 -32.0 800 0.161 -87.5 5.094 92.6
Toshiba
Original
SC-59
Abstract: 2SC5094 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 VHF~UHF Band Low Noise Amplifier Applications · · Low noise figure, high gain. NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage , 0.054 S11 Ang. -39.7 -64.1 -78.3 -87.5 -95.3 -106.3 -121.7 -158.4 171.6 144.0 Mag. 12.332 8.847 6.514 Toshiba
Original
Abstract: TO SHIBA TENTATIVE MT3S03T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm 1.2 ± 0.05 â'¢ Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) â'¢ High Gain 0.8 ± 0.05 : Gain = 8 dB (at f = 2 GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter , 82.50 80.56 78.86 77.07 75.49 73.43 72.09 70.46 68.56 67.10 65.14 Mag. O 0.027 0.040 -
OCR Scan
961001EAA1

working of ic 8038

Abstract: marking 5241 MT3S03AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications · Low noise figure: NF = 1.4dB (at f = 2 GHz) · Unit: mm High gain: gain = 8dB (at f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage , 65.14 0.269 66.91 0.044 -110.52 7.61 5 2003-08-08 MT3S03AT RESTRICTIONS ON
Toshiba
Original
working of ic 8038 marking 5241 8250 bridge IC 7486 ic 7815 specifications of ic 8038
Abstract: TO SH IBA TENTATIVE MT3S03AT TOSHIBA TRANSISTOR VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS MT3S03AT SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 10 5 2 40 10 100 125 -55-125 UNIT V V V mA mA mW °C °C SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 1.2 ±0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) TTirrV» fio i n J-J-lgll V ^U lll U .1 1 1 MAXIMUM , 88.83 86.47 84.51 82.50 80.56 78.86 77.07 75.49 73.43 72.09 70.46 68.56 67.10 65.14 Mag. (°) 0.027 -
OCR Scan
000707EAA2 IS21I2

specifications of ic 8038

Abstract: ic LC 7815 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR MT3S03T V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS MT3S03T SYMBOL VCBO VCEO Ve b o ic :B PC Tj Tstg RATING 10 5 2 100 10 100 125 -5 5 -1 2 5 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm · · Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) High Gain : Gain -8 dB (at f = 2 GHz) UNIT V V V mA mA mW °C °C MAXIMUM RATINGS (Ta = 25 , 67.93 65.14 0.320 131.09 2.40 0.269 66.91 Mag. H 0.622 0.389 0.276 0.213 0.174 0.149 0.130 0.114
-
OCR Scan
ic LC 7815

2114 Ram pinout 18

Abstract: for 6514, 2114, 9114, and 404S Types) · Common Data Input and Output · Memory Retention for Standby , at 12mW/°C to 200mW Device Dissipation Per Output Transistor Ta = Full Package Temperature Range (All
-
OCR Scan
2114 Ram pinout 18 MWS5114 1024-W MWS5114E3 MWS5114E3X MWS5114D3 MWS5114D3X

Pc 614

Abstract: 2SC5094 TOSHIBA 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 0 9 4 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS â'¢ Low Noise Figure, High Gain. â'¢ NF=1.8dB, |S2le|2 = 7.5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING MER* "H" 2 Type Name hEE Rank Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 10 V , 0.392 -64.1 8.847 114.7 0.059 64.3 0.586 -31.8 600 0.248 -78.3 6.514 101.4 0.077 64.1 0.495
-
OCR Scan
Pc 614 sc 7113

specifications of ic 8038

Abstract: working of ic 8038 MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications · · Low noise figure: NF = 1.4dB (at f = 2 GHz) High gain: gain = 8dB (at f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction , 72.09 70.46 68.56 67.10 65.14 Mag. 0.027 0.040 0.051 0.062 0.074 0.086 0.098 0.110 0.123 0.136 0.148
Toshiba
Original
for semiconductor IC 7106

2SC5094

Abstract: TOSHIBA 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 0 9 4 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS â'¢ Low Noise Figure, High Gain. â'¢ NF=1.8dB, |S2le|2 = 7.5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING Type Name Jj^^T hFE Rank MER- "H" 1 "H" 2 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage , 114.7 0.059 64.3 0.586 -31.8 600 0.248 -78.3 6.514 101.4 0.077 64.1 0.495 -32.0 800 0.161 -87.5
-
OCR Scan

2SC5094

Abstract: 6514 TRANSISTOR TOSHIBA 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 0 9 4 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. â'¢ Low Noise Figure, High Gain. . NF = 1.8dB, |S2lel2 = 7.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING MER ~R-B" Type Name hEE Rank Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage vCBO 20 V Collector-Emitter Voltage vCEO 10 V , 0.037 68.5 0.783 400 0.392 -64.1 8.847 114.7 0.059 64.3 0.586 600 0.248 -78.3 6.514 101.4 0.077
-
OCR Scan
Showing first 20 results.