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65-NM

Catalog Datasheet MFG & Type PDF Document Tags

130nm

Abstract: numonyx intel . 13 5.5.1 WAIT State P33 , place Section 5.7, "Performance Improvements in P33 65nm" on page 16. Updated Axcell trademark Removed , [6]: Same values for P33 130nm and P33 65nm. · Reserved RCR[5:4]: Same values for P33 130nm and P33 65nm. · Burst Wrap RCR[3]: Same values for P33 130nm and P33 65nm. · Burst Length RCR[2:0]: Same values for P33 130nm and P33 65nm. Note: Application Note 11 The differences are summarized in
Numonyx
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130nm numonyx intel strataflash p33 P33-65nm 65nm 188 p33 Transistor 256-M 0001FF 0000FF 0003FF P33-130

js28f256p

Abstract: RC48F4400P0TB0EJ 256Mb and 512Mb (256Mb/256Mb), P33-65nm Features Micron Parallel NOR Flash Embedded Memory (P33-65nm) RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF, PC28F256P33TFE, PC28F256P33BFE , '" 65nm process technology â'¢ High performance â'" 95ns initial access for Easy BGA â'" 105ns , ) PDF: 09005aef845667ad p33_65nm_MLC_256Mb-512mb.pdf - Rev. B 12/13 EN 1 Micron Technology, Inc , without notice. 256Mb and 512Mb (256Mb/256Mb), P33-65nm Features Discrete and MCP Part Numbering
Micron Technology
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RC48F4400P0TB0EJ js28f256p P33-65 PC28F256P33BFF PC28F256P33BFR PC48F4400P0TB0EE

Broadcom product roadmap

Abstract: tsmc 130nm metal process White Paper Altera's Strategy for Delivering the Benefits of the 65-nm Semiconductor Process Introduction Altera's strategy for delivering the benefits of the 65-nm semiconductor manufacturing process , end, Altera has been steadily developing and testing its 65-nm technology since early 2003. This , consumption that are possible with the 65-nm process. The 65-nm process presents specific product definition , with the 65-nm process. The physical realities of IC development with this process represent
Altera
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Broadcom product roadmap tsmc 130nm metal process 65nm sources 65-nm WP-01002-1 2015 static ram
Abstract: 512Mb, 1Gb, 2Gb: P33-65nm Features Micron Parallel NOR Flash Embedded Memory (P33-65nm , block â'" 65nm process technology â'¢ High performance â'¢ Easy BGA package features â'" 95ns , MHz continuous synchronous read current: 21mA (TYP), 24mA (MAX) PDF: 09005aef845667b8 p33_65nm , specifications discussed herein are subject to change by Micron without notice. 512Mb, 1Gb, 2Gb: P33-65nm , ) Parameter Location B/T = Bottom/Top parameter E = Symmetrical Blocks Lithography F = 65nm Micron Technology
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JS28F512P33BFD JS28F512P33TFA JS28F512P33EFA PC28F512P33BFD PC28F512P33TFA PC28F512P33EFA

Flip-chip 1.8V SRAM

Abstract: 65nm 65nm CMOS Technology, CS200 / CS200A Description As miniaturization of silicon devices , . Fujitsu's 65nm technology has shrunk gates by 25% when compared to the 90nm technology. Fujitsu will , the 90nm generation. Specifications 65nm (CS200) Gate length Core VDD Gate oxide thickness , Drain current enhancement 65nm (CS200A) 30nm 1.0V 1.1nm NiSi / Poly-Si NiSi 11-Cu + 1 , 65nm CMOS Technology, CS200 / CS200A Technology Lineup Leakage current Large CS200A: Wide
Fujitsu
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CS100 Flip-chip 1.8V SRAM 65nm sram cmos logic 90nm WFS-FS-21139-9/2005

USE OF TRANSISTOR

Abstract: Altera Cyclone II 2C70 processing tasks for SDR. The capabilities of today's 65-nm FPGAs, with higher performance and more logic , . However, the latest generation of 65nm FPGAs must manage increased process technology issues concerning , specifications, and preview new methods/features in 65-nm technology for power management and programmability , technologies at the 65-nm process node (and prior) are used to maintain or increase performance while keeping , 130-nm, 90-nm, and 65-nm products Copper replaced aluminum, providing reduced electrical and power
Altera
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USE OF TRANSISTOR Altera Cyclone II 2C70 2C20

180-nm CMOS standard cell library inverter

Abstract: 45-nm CMOS standard cell library process technology Fujitsu @ 65nm: Providing Solutions through Integrated Design Services The Fujitsu Advantage.Not Just a Foundry Contents Benefits of leading-edge technology at 65nm Challenges Solutions Fujitsu Microelectronics America, Inc. 2 FSA Semiconductor Forum, June 14, 2006 65nm Benefits , 65nm 90nm Inc.% 5.7 7.0 19% 23.1 30.8 25% 4.9mm 65nm Fujitsu Microelectronics America, Inc. 3 FSA Semiconductor Forum, June 14, 2006 65nm Benefits: Power Consumption P ow
Fujitsu
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CS101 180-nm CMOS standard cell library inverter 45-nm CMOS standard cell library process technology 130 nm CMOS standard cell library 45 nm library 130-nm CMOS standard cell library inverter 130 nm CMOS standard cell library fujitsu CS201 133MH
Abstract: 256Mb and 512Mb (256Mb/256Mb), P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex , block â'" 65nm process technology â'¢ High performance â'" 100ns initial access for Easy BGA â , (TYP), 24mA (MAX) PDF: 09005aef84566799 p30_65nm_MLC_256Mb-512mb.pdf - Rev. B 8/13 EN 1 , to change by Micron without notice. 256Mb and 512Mb (256Mb/256Mb), P30-65nm Features Discrete Micron Technology
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P30-65 JS28F256P30B/TF RC28F256P30B/TF PC28F256P30B/TF RD48F4400P0VBQE
Abstract: 512Mb, 1Gb, 2Gb: P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm , +85°C â'" Minimum 100,000 ERASE cycles per block â'" 65nm process technology â'¢ High performance , : 21mA (TYP), 24mA (MAX) PDF: 09005aef845667b3 p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN 1 , to change by Micron without notice. 512Mb, 1Gb, 2Gb: P30-65nm Features Discrete and MCP Part , Bottom/Top parameter E = Symmetrical Blocks Lithography F = 65nm Features * Note: 1 Micron Technology
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JS28F512P30BF JS28F512P30EF JS28F512P30TF PC28F512P30BF PC28F512P30EF PC28F512P30TF

JS28F512P33BF

Abstract: JS28F512 NumonyxTM AxcellTM P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product , for TSOP - Minimum 100,000 erase cycles - 65nm process technology Feb 2010 Order Number , . Datasheet 2 Feb 2010 Order Number: 208043-04 P33-65nm Contents 1.0 Functional Description , . 31 Datasheet 3 Feb 2010 Order Number: 208043-04 P33-65nm 10.2 10.3 10.1.2 Unlock , .87 Datasheet 4 Feb 2010 Order Number: 208043-04 P33-65nm 1.0 Functional Description 1.1
Numonyx
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JS28F512P33BF JS28F512 pc28f00ap33 PC28F00AP33BF JS28F512P33TF JS28F00AP33BF 512-M 32-KB 128-KB

MICRON mcp

Abstract: P30-65nm 256Mb and 512Mb (256Mb/256Mb), P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm , Minimum 100,000 erase cycles per block ­ 65nm process technology PDF: 09005aef84566799 p30_65nm , without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb and 512Mb (256Mb/256Mb), P30-65nm , (VCC = 1.7 to 2.0V; VCCQ = 1.7 to 3.6V) B/T = Bottom/Top parameter F = 65nm * 1. The last digit is , part number: JS28F256P30BF* PDF: 09005aef84566799 p30_65nm_MLC_256Mb-512mb.pdf - Rev. A 1/13 EN 2
Micron Technology
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MICRON mcp P30-65nm PC28F256P PC28F256P30B PC28F256P30BFF PF48F4400P0VBQEF RC48F4400P0VB0E PC48F4400P0VB0E PF48F4000P0ZB/TQE 14MB/ 128KB
Abstract: 512Mb, 1Gb, 2Gb: P33-65nm Features Micron Parallel NOR Flash Embedded Memory (P33-65nm , block â'" 65nm process technology â'¢ High performance â'¢ Easy BGA package features â'" 95ns , MHz continuous synchronous read current: 21mA (TYP), 24mA (MAX) PDF: 09005aef845667b8 p33_65nm , specifications discussed herein are subject to change by Micron without notice. 512Mb, 1Gb, 2Gb: P33-65nm , = Bottom/Top parameter E = Symmetrical Blocks Lithography F = 65nm Features * Note Micron Technology
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JS28F00AP33BFA JS28F00AP33TFA JS28F00AP33EFA PC28F00AP33BFA PC28F00AP33TFA PC28F00AP33EFA

tsmc 130nm metal process

Abstract: tsmc 130 lp White Paper Achieving Low Power in 65-nm Cyclone III FPGAs With the introduction of the 65-nm , high-volume applications. The move to the 65-nm process node provides the benefits associated with smaller , benefits, the 65-nm process brings with it new challenges related to power consumption. This white paper , criteria. In order to provide the lower cost and increased resources associated with the 65-nm process , industry's lowest power, low-cost 65-nm FPGAs. Benefits of Reducing Power Achieving these power
Altera
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tsmc 130 lp tsmc design rule qualcomm power Altera Cyclone III Qualcomm "power management" 2010

TSOP 48 pin flash gbit

Abstract: JS28F00AP33BF Numonyx® AxcellTM P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product , verify an erased block - Minimum 100,000 erase cycles Voltage and Power: - 65nm process technology - , P33-65nm Contents 1.0 Functional Description , . 33 Datasheet 3 January 2013 Order Number: 208043-06 P33-65nm 10.2 10.3 10.1.1 Lock , .88 B C Datasheet 4 January 2013 Order Number: 208043-06 P33-65nm 1.0 1.1
Numonyx
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TSOP 48 pin flash gbit 1FFC000
Abstract: 256Mb and 512Mb (256Mb/256Mb), P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex , block â'" 65nm process technology â'¢ High performance â'" 100ns initial access for Easy BGA â , (TYP), 24mA (MAX) PDF: 09005aef84566799 p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN 1 , to change by Micron without notice. 256Mb and 512Mb (256Mb/256Mb), P30-65nm Features Discrete Micron Technology
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JESD47

JS28F256J3F105

Abstract: RC28F256J3F-95 NumonyxTM StrataFlash® Embedded Memory (J3-65nm) 256-Mbit Datasheet Product Features , ® Embedded Memory (J3-65nm) Contents 1.0 Functional Overview , . 35 December 2008 319942-02 Datasheet 3 NumonyxTM StrataFlash® Embedded Memory (J3-65nm , .64 Datasheet 4 December 2008 319942-02 NumonyxTM StrataFlash® Embedded Memory (J3-65nm) 1.0 Functional Overview The NumonyxTM StrataFlash® Embedded Memory (J3-65nm) provides improved mainstream
Numonyx
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JS28F256J3F105 RC28F256J3F-95 TE28F256J3F105 js28f256j3f TE28F256J3F PC28F256J3F95 J3-65 512-W

Ba-5590

Abstract: uav design White Paper Addressing SWaP Challenges in Military Platforms With 65-nm FPGAs and Structured , Challenges in Military Platforms With 65-nm FPGAs and Structured ASICs Altera Corporation SWaP , Addressing SWaP Challenges in Military Platforms With 65-nm FPGAs and Structured ASICs Figure 2. Secure , Military Platforms With 65-nm FPGAs and Structured ASICs Altera Corporation Table 1. Secure , Altera Corporation Addressing SWaP Challenges in Military Platforms With 65-nm FPGAs and Structured
Altera
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Ba-5590 uav design BA5590 uav design specification uav sensors radar dsp processor
Abstract: Reserved. Datasheet 2 February 2009 Order Number: 208042-03 P30-65nm Contents 1.0 , . 38 Datasheet 3 February 2009 Order Number: 208042-03 P30-65nm 12.0 Power and Reset , .82 Datasheet 4 February 2009 Order Number: 208042-03 P30-65nm 1.0 Functional Description 1.1 Introduction This document provides information about the NumonyxTM AxcellTM P30-65nm Flash memory and describes its features, operations, and specifications. P30-65nm is the latest generation of NumonyxTM Numonyx
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P3065

lga775 socket

Abstract: 88E8056 TDP, LGA775 (2C) Intel® Coreâ"¢2 Duo E6400, 2.13 GHz, 1066MHz FSB, 2MB L2 Cache, 65nm, 65W TDP , ® Coreâ"¢2 Duo E4300, 1.8 GHz, 800MHz FSB, 2MB L2 Cache, 65nm, 65W TDP, LGA775 Intel® Celeron® E3400 , , 800MHz FSB, 1MB L2 Cache, 65nm, 65W TDP, LGA775 (2C) Intel® Celeron® E1500, 2.2 GHz, 800MHz FSB, 512K L2 Cache, 65nm, 65W TDP, LGA775 (2C) Intel® Celeron® 440, 2.0 GHz, 800MHz FSB, 512KB L2 Cache, 65nm, 35W TDP, LGA775 (1C) Intel® Pentium® 4 651, 3.4 GHz, 800MHz FSB, 2MB L2 Cache, 65nm, 95W TDP
Adlink Technology
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88E8056 lga775 socket MI-960 88E8053 82566DM RJ-45 E7400 1066MH

PC28F256P33

Abstract: numonyx MLC NumonyxTM StrataFlash® Embedded Memory (P33-65nm) 256-Mbit, 512-Mbit (256M/256M) Datasheet , temperature: ­40 °C to +85 °C - Minimum 100,000 erase cycles per block - 65nm ETOXTM X process technology , © 2008, Numonyx, B.V., All Rights Reserved. Datasheet 2 Nov 2008 Order Number: 320003-05 P33-65nm , . 43 Datasheet 3 Nov 2008 Order Number: 320003-05 P33-65nm 12.1 12.2 12.3 Power-Up , .86 B C Datasheet 4 Nov 2008 Order Number: 320003-05 P33-65nm 1.0 1.1
Numonyx
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PC28F256P33 numonyx MLC te28f256p33tf JS28F256P33

honeywell pcm45

Abstract: mpga479 256Mb and 512Mb (256Mb/256Mb), P33-65nm Features Micron Parallel NOR Flash Embedded Memory (P33-65nm) RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF, PC28F256P33TFE, PC28F256P33BFE , '" 65nm process technology â'¢ High performance â'" 95ns initial access for Easy BGA â'" 105ns , ) PDF: 09005aef845667ad p33_65nm_MLC_256Mb-512mb.pdf - Rev. B 12/13 EN 1 Micron Technology, Inc , without notice. 256Mb and 512Mb (256Mb/256Mb), P33-65nm Features Discrete and MCP Part Numbering
Intel
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honeywell pcm45 mpga479 cpu socket mPGA479m INTEL embedded processors Core 2 duo pcm45 intel core 2 duo

js28F128j3f75

Abstract: JS28F128J3f-75 512Mb, 1Gb, 2Gb: P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm , +85°C â'" Minimum 100,000 ERASE cycles per block â'" 65nm process technology â'¢ High performance , : 21mA (TYP), 24mA (MAX) PDF: 09005aef845667b3 p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN 1 , to change by Micron without notice. 512Mb, 1Gb, 2Gb: P30-65nm Features Discrete and MCP Part , Bottom/Top parameter E = Symmetrical Blocks Lithography F = 65nm Features * Note: 1
Numonyx
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28F640J3D PC28F320J3F75 RC28F640J3F75 PC28F640J3F75 js28F128j3f75 JS28F128J3f-75 js28f640j3f75 js28f640J3F JS28F128J3F 256-W JESD47E 28F256J3D 28F128J3D 28F320J3D

PF48F4400

Abstract: RD48F4400 512Mb, 1Gb, 2Gb: P33-65nm Features Micron Parallel NOR Flash Embedded Memory (P33-65nm , block â'" 65nm process technology â'¢ High performance â'¢ Easy BGA package features â'" 95ns , MHz continuous synchronous read current: 21mA (TYP), 24mA (MAX) PDF: 09005aef845667b8 p33_65nm , specifications discussed herein are subject to change by Micron without notice. 512Mb, 1Gb, 2Gb: P33-65nm , ) Parameter Location B/T = Bottom/Top parameter E = Symmetrical Blocks Lithography F = 65nm
Numonyx
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PF48F4400 RD48F4400 PC28F256P30T TSOP IR rc28f256p30bf JS28f256

PC48F4400P0VB0E

Abstract: NumonyxTM AxcellTM P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product , Minimum 100,000 erase cycles - 65nm process technology Feb 2010 Order Number: 208042-04 , 2010 Order Number: 208042-04 P30-65nm Contents 1.0 Functional Description , ) . 34 Datasheet 3 Feb 2010 Order Number: 208042-04 P30-65nm 11.2 11.3 Read , .87 Datasheet 4 Feb 2010 Order Number: 208042-04 P30-65nm 1.0 Functional Description 1.1
Numonyx
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PC28F256P33

Abstract: JS28F256P33 Numonyx® AxcellTM P30-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell (SBC) Datasheet , 100,000 erase cycles 65nm process technology Voltage and Power: - - - - VCC (core) voltage , , Numonyx, B.V., All Rights Reserved. Datasheet 2 Apr 2010 Order Number: 208033-02 P30-65nm SBC , ) . 34 Datasheet 3 Apr 2010 Order Number: 208033-02 P30-65nm SBC 11.3 One-Time , .89 B C Datasheet 4 Apr 2010 Order Number: 208033-02 P30-65nm SBC 1.0 1.1
Numonyx
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pc28F256P33T PC28F256P33B PC48F PC28F256p33bf PC28F256P33TF JS28F256P33TF

PC28F00AP30TF

Abstract: PC28F00BP30EF Numonyx® Flash Memory (P33-65nm) 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features , Minimum 100,000 erase cycles per block - 65nm ETOXTM X process technology Jul 2011 Order Number , Jul 2011 Order Number: 320003-10 P33-65nm Contents 1.0 Functional Description , . 43 Datasheet 3 Jul 2011 Order Number: 320003-10 P33-65nm 12.1 12.2 12.3 , .87 Datasheet 4 Jul 2011 Order Number: 320003-10 P33-65nm 1.0 Functional Description 1.1
Numonyx
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PC28F00AP30TF PC28F00BP30EF JS28F512P30 PC28F00AP30BF PC28F00AP30EF JS28F00AP30BF

PC28F128P30BF65

Abstract: PC28F128P30BF 65nm ETOXTM X process technology Datasheet 1 Mar 2010 Order Number: 320003-09 , 2010 Order Number: 320003-09 P33-65nm Contents 1.0 Functional Description , . 43 Datasheet 3 Mar 2010 Order Number: 320003-09 P33-65nm 12.1 12.2 12.3 Power-Up , .89 B C Datasheet 4 Mar 2010 Order Number: 320003-09 P33-65nm 1.0 1.1 , Memory (P3365nm) device and describes its features, operations, and specifications. P33-65nm is the
Numonyx
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PC28F128P30BF65 PC28F128P30BF PC28F640P30TF PC28F640P30TF65 js28f128p30tf75 JS28F640P30BF 128-M

RC28F256P33BF

Abstract: JS28F256P33 Numonyx® AxcellTM P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product , verify an erased block - Minimum 100,000 erase cycles Voltage and Power: - 65nm process technology - , P33-65nm Contents 1.0 Functional Description , . 33 Datasheet 3 January 2013 Order Number: 208043-06 P33-65nm 10.2 10.3 10.1.1 Lock , .88 B C Datasheet 4 January 2013 Order Number: 208043-06 P33-65nm 1.0 1.1
Numonyx
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RC28F256P33BF JS28F256P33BF RC28F256P33TF PC48F4400P0TB0E RC48F4400P0TB0E 1FF8000
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