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Abstract: with similar configuration. MB84VD23280FA : 64M-bit NOR-type dual-operation flash memory8M-bit SRAM MB84VD23381FJ : 64M-bit NOR-type dual-operation flash memory16M-bit Mobile FCRAM*2*3 MB84VD23481FJ : 64M-bit NOR-type dual-operation flash memory32M-bit Mobile FCRAM MB84VD23581FJ : 64M-bit NOR-type dual-operation flash memory64M-bit Mobile FCRAM The 64M-bit NOR-type dual-operation flash memory mounted in all these , the mobile devices. We have developed our own 16M/32M/64M-bit Mobile FCRAMs as ASMs *4 for mobile Fujitsu
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internal block diagram of mobile phone mobile phone circuit diagram 32-Mbit 32M-BIT stacked MCP
Abstract: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE 64M-BIT VIRTUAL CHANNEL SDRAM VERSION 1.1 Description The 64 Mbit Virtual Channel (VC) SDRAM is , 9 7 NEC 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE Ordering Information ( 1/2 , ) NEC 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE J Low Power Operation 1 _ Part number , 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE Part Number [ x4, x8 ] ÃPÃ4 5 65 8 2 1 G5 -
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M13022EJ5V0DS00 54PIN S54G5-80-9JF
Abstract: DATA SHEET MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM 64M-BIT VIRTUAL CHANNEL SDRAM Description The 64M-bit Virtual Channel (VC) SDRAM is implemented to be 100% pin and package compatible to , revised points. © 1997,1998 64M-BIT VIRTUAL CHANNEL SDRAM 5 Ordering Information (1/2 , 143 133 100 66 1 2 2M x 16 x 2 143 133 100 66 1 Note Under development 2 64M-BIT , 32 Channels Interface 1 : LVTTL 2 : SSTL Note Note Reserved 3 64M-BIT VIRTUAL CHANNEL NEC
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M13022EJ9V0DS00
Abstract: MB82D02172A / MB82D04172 New products 32M-bit / 64M-bit Mobile FCRAM TM MB82D02172A / MB82D04172 FUJITSU has developed 32M-bit and 64M-bit Mobile FCRAMTMs, these memories provide large-density , developing a largedensity 64M-bit Mobile FCRAM with the same high access speed of 65ns and low power , developed: Second-generation 32M-bit product: MB82D02172A First-generation 64M-bit product: MB82D04172 , ) / 16M-bit (64M-bit product) data can be retained. In the conventional power down-mode (SLEEP mode Fujitsu
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PARTIAL16M-
Abstract: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM with DOUBLE DATA RATE 64M-BIT VIRTUAL CHANNEL SDRAM VERSION 0.1 Description The 64 M-bit Virtual Channel (VC) SDRAM , Corporation 1998 NEC 64M-BIT VIRTUAL CHANNEL SDRAM with DOUBLE DATA RATE Ordering Information Part , Preliminary Data Sheet NEC 64M-BIT VIRTUAL CHANNEL SDRAM with DOUBLE DATA RATE Part Number [ x4 , : SSTL Note Reserve Preliminary Data Sheet 3 NEC 64M-BIT VIRTUAL CHANNEL SDRAM with -
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s6665
Abstract: SPECIFICATION UPDATE Errata Density 64-Mbit Steppings 32-Mbit Steppings # A-0 1 X A , request. Specification Changes Density 64-Mbit Steppings # A-0 3 297848-005 X A , UPDATE Specification Clarifications Density 64-Mbit Steppings # A-0 32-Mbit Steppings A , ) Package 64-Mbit A-0 SSOP Ninth digit on topside FPO mark (third line) = "A," "E," or "F" 64-Mbit A-0 uBGA Ninth digit on packaging label FPO mark (third line) = "A," "E," or "F" 64-Mbit Intel
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28F320J5 28F640J5 DA28F320J5-120 DA28F640J5-150 G28F320J5-120 G28F640J5-150 intel topside mark intel DOC E28F320J5-120
Abstract: DA TA SH EE T NEC MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM 64M-BIT VIRTUAL , Corporation 1997,1998 NEC Ordering Information 64M-BIT VIRTUAL CHANNEL SDRAM ( 1/ 2 ) Part number , Number 64M-BIT VIRTUAL CHANNEL SDRAM [ x4, x8 ] ¿/PD4 5 NEC Memory 65 8 2 1 G5 - A70L Low , 64M-BIT VIRTUAL CHANNEL SDRAM [ X16, X32 ] ¿¿PD4 5 NEC Memory Synchronous DRAM 65 16 1 G5 - , d 4 NEC Pin Configurations /xxx indicates active low signal. 64M-BIT VIRTUAL CHANNEL -
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D4565821G5-A70-9J 13022EJ8V0D
Abstract: HYB 39S64400/800CT(L) 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM · High Performance , and are available in TSOPII packages. Data Book 1 12.99 HYB 39S64400/800CT(L) 64-MBit , 39S64400/800CT(L) 64-MBit Synchronous DRAM TSOPII-54 (10.16 mm × 22.22 mm, 0.8 mm pitch) 8Mx8 16 M , and x8 Organized 64M-SDRAMs Data Book 3 12.99 HYB 39S64400/800CT(L) 64-MBit Synchronous , 4 12.99 HYB 39S64400/800CT(L) 64-MBit Synchronous DRAM Column Addresses A0 - A8, AP, BA0 Infineon Technologies
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P-TSOPII-54 cbx smd code SMD marking code ax2 PC100-222 PC133-333 smd marking T22 64-MB PC133 PC100 SPT03932 HYB39S64400/800/160CT
Abstract: HYB39S64400/800/160BT(L) 64MBit Synchronous DRAM 64 MBit Synchronous DRAM · High , with INFINEON' advanced 0.2um 64MBit DRAM process technology. The device is designed to comply with , (L) 64MBit Synchronous DRAM Ordering Information Type Ordering Code Package Description , Select INFINEON Technologies 2 HYB39S64400/800/160BT(L) 64MBit Synchronous DRAM 4M x 16 8M , A6 A5 A4 VSS HYB39S64400/800/160BT(L) 64MBit Synchronous DRAM Column Addresses A0 - A9 Infineon Technologies
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39S64160BT-8 smd marking code bs TSOP RECEIVER MARKING AX5 sdram 4 bank 4096 16 smd code marking t6 HYB39S6440
Abstract: HYB 39S64400/800CT(L) 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM · High Performance , and are available in TSOPII packages. Data Book 1 12.99 HYB 39S64400/800CT(L) 64-MBit , 39S64400/800CT(L) 64-MBit Synchronous DRAM TSOPII-54 (10.16 mm × 22.22 mm, 0.8 mm pitch) 8Mx8 16 M , and x8 Organized 64M-SDRAMs Data Book 3 12.99 HYB 39S64400/800CT(L) 64-MBit Synchronous , 4 12.99 HYB 39S64400/800CT(L) 64-MBit Synchronous DRAM Column Addresses A0 - A8, AP, BA0 Infineon Technologies
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MARKING A3 SMD MARKING CODE a09 SMD MARKING T20 SPT03933
Abstract: HYB39S6440x/80x/16xAT(L) 64MBit Synchronous DRAM 64 MBit Synchronous DRAM Preliminary , is fabricated with SIEMENS'advanced quarter micron 64MBit DRAM process technology. The device is , HYB39S6440x/80x/16xAT(L) 64MBit Synchronous DRAM Ordering Information Type Ordering Code Package , (SSTL version only) Semiconductor Group 2 HYB39S6440x/80x/16xAT(L) 64MBit Synchronous DRAM , HYB39S6440x/80x/16xAT(L) 64MBit Synchronous DRAM Column Addresses A0 - A9, AP, BA0, BA1 Row Addresses Siemens
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HYB 39S64800AT-8 39S64160AT-8 39S64800AT-8
Abstract: 1Mx16 60; 70; 80 CP-50 TTP-50 5.0 1k refresh HM5164160 64Mbit DRAM FPM 4Mx16 50; 60 CP-50 TTP-50 3.0-3.6 8k refresh HM5164160A 64Mbit DRAM FPM 4Mx16 60; 70 CP-50 TTP-50 3.3 8k refresh HM5164165 64Mbit DRAM EDO 4Mx16 50; 60 CP-50 TTP-50 3.3 8k refresh HM5164165A 64Mbit DRAM EDO 4Mx16 50; 60; 70 , -32 TTP-32 3.3 8k refresh 64Mbit DRAM FPM 8Mx8 50; 60 CP-32 TTP-32 3.0-3.6 Hitachi Semiconductor
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DIMM-168 4Mx4 dram simm TTP32 SIMM72 dram card 60 pin TTP42 32MByte ATA-68 CF-50 HB286015C3 HB286030A3 HB286030C3 HB286045A3
Abstract: DIMM-184 3.0-3.6 unbuffered, 2 bank, 4k refresh, 100 MHz, 125 MHz HB54A89FM 64Mbit MOD , 64Mbit DRAM FPM 4Mx16 50; 60 - CP-50 TTP-50 3.0-3.6 not for new design HM5164165 64Mbit DRAM EDO 4Mx16 50; 60 - CP-50 TTP-50 3.0-3.6 not for new design HM5164400 64Mbit DRAM FPM 16Mx4 50; 60 - CP-32 TTP-32 3.0-3.6 not for new design HM5164405 64Mbit DRAM EDO 16Mx4 50; 60 - CP-32 TTP-32 3.0-3.6 not for new design Hitachi Semiconductor
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HB286008A3 HB286008C3 HB286015A3 HB286045C3 HB286060A3 FP-28 4Mx1 sram HM51W17805 16Mx8 dram EDO HB289016A4 HN29W16814 HB286075A3
Abstract: HYB39V64x0yT 64MBit Virtual Channel SDRAM 64MBit Virtual Channel SDRAM 1 Advanced , : LVTTL Refresh cycle: 4 K cycles / 64 ms Description The 64M-bit Virtual Channel (VC) SDRAM is , 64MBit Virtual Channel SDRAM 1.2 Ordering Information Table 1 Order Code VC SDRAM Device Type , Note: 1: Under development Semiconductor Group 2 HYB39V64x0yT 64MBit Virtual Channel SDRAM , Products are under development Semiconductor Group 3 HYB39V64x0yT 64MBit Virtual Channel SDRAM Siemens
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HYB39V64
Abstract: # HYB39S64400/800/160BT(L) I hìfbear 64MBit Synchronous DRAM 64 MBit Synchronous DRAM â'¢ High , system clock. The chip is fabricated with INFINEON' advanced 0.2|j,m 64MBit DRAM process technology. The , ) I hìfbear 64MBit Synchronous DRAM Ordering Information Type Ordering Code Package Description L , ICminer.com Electronic-Library Service CopyRight 2003 # HYB39S64400/800/160BT(L) I hìfbear 64MBit Synchronous , ICminer.com Electronic-Library Service CopyRight 2003 # HYB39S64400/800/160BT(L) I hìfbear 64MBit Synchronous -
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SMD MARKING CODE aO9
Abstract: SIEM ENS 64MBit Virtual Channel SDRAM HYB39V64x0yT 64MBit Virtual Channel SDRAM 1 , Description The 64M-bit Virtual Channel (VC) SDRAM is im plemented to be 100% pin and package com patible , HYB39V64800T -15 HYB39V64160T -15 H YB39V644402T -15 HYB39V64802T -15 HYB39V64162T -15 HYB39V64x0yT 64MBit , HYB39V644402TL -15 HYB39V64802TL -15 H YB39V64162TL -15 HYB39V64x0yT 64MBit Virtual Channel SDRAM Q -Num , 64MBit Virtual Channel SDRAM Partnum ber HYB 39V64400T -7 HYB 39V64800T -7 HYB 39V64160T -7 -
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Abstract: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE 64M-BIT VIRTUAL CHANNEL SDRAM VERSION 1.2 Description The 64 Mbit Virtual Channel (VC) SDRAM is , February 1998 NS CP(K) Printed in Japan The mark · shows major revised points. © 1997 64M-BIT , Preliminary Data Sheet 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE · [ Low Power Operation ]Note , Preliminary Data Sheet 3 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE Part Number [ x4, x8 ] u NEC
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M13022EJ6V0DS00
Abstract: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE 64M-BIT VIRTUAL CHANNEL SDRAM VERSION 2.0 Description The 64 M-bit Virtual Channel (VC) SDRAM is , mark show s m ajor revised points. © NECCorporation 1997 NEC Ordering Information 64M-BIT , read latency Note Under developm ent 2 Preliminary Data Sheet NEC 64M-BIT VIRTUAL , 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE [ x4, x8 ] /iPD4 5 NEC Memory Synchronous DRAM -
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TP032 SC 2262 M13022EJ7V0DS00
Abstract: HYB39S64400/800/160AT(L) 64MBit Synchronous DRAM 64 MBit Synchronous DRAM · High , 64MBit DRAM process technology. The device is designed to comply with all JEDEC standards set for , & 3. Semiconductor Group 1 10.98 HYB39S64400/800/160AT(L) 64MBit Synchronous DRAM , Select Semiconductor Group 2 HYB39S64400/800/160AT(L) 64MBit Synchronous DRAM 4M x 16 8M x , A6 A5 A4 VSS HYB39S64400/800/160AT(L) 64MBit Synchronous DRAM Column Addresses A0 - A9 Siemens
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Abstract: SIEMENS 64 MBit Synchronous DRAM HYB39S64400/800/160AT(L) 64MBit Synchronous DRAM · High , ' advanced quarter micron 64MBit DRAM process technology. The device is designed to comply with all JEDEC , latencies 2 & 3. Semiconductor Group 1 7.98 SIEMENS HYB39S64400/800/160AT(L) 64MBit , SIEMENS HYB39S64400/800/160AT(L) 64MBit Synchronous DRAM 4M X 16 8 4 8M 16M X X VDD , HYB39S64400/800/160AT(L) 64MBit Synchronous DRAM Block Diagram for 4 bank x 4M x 4 SDRAM Semiconductor -
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HYB39S 64400/800/160AT
Abstract: MEMORY SPECIFICATION UPDATE Errata Density 64-Mbit Steppings 32-Mbit Steppings # A-0 A , Changes Density 64-Mbit Steppings # 32-Mbit Steppings A-0 A-0 N/A 14 Specification Clarifications Density 64-Mbit Steppings # 32-Mbit Steppings A-0 A-0 N/A 297848-003 Page , correlates to a specific device stepping as illustrated in the table below: Stepping(1) Package 64-Mbit A-0 SSOP Ninth digit on topside FPO mark (third line) = "A" or "E" 64-Mbit A-0 uBGA Intel
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date code marking intel strataflash flash device MARKing intel intel topside marking on flash memory intel flash date code marking uBGA device MARKing intel
Abstract: ) command. The refresh address is generated internally. 4096 REFA cycles within 64ms refresh 64Mbit memory Spansion
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S29GL-N M29W320E M29W640G S29GL032N S29GL064N FBGA64 S29GL064N application notes TSOP56 FOOTPRINT Numonyx M29W640GS hardware protection of S29GL064N M29W320E/M29W640G
Abstract: generated internally. 4096 REFA cycles within 64ms refresh 64Mbit memory cells. The auto-refresh is Mitsubishi
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M2V64S20BTP-7 M2V64S30BTP-7 M2V64S40BTP-7 M2V64S20BTP M2V64S30BTP M2V64S40BTP 4194304-WORD 2097152-WORD 1048576-WORD
Abstract: 64-Mbit (8-Mbyte) and 32-Mbit (4-Mbyte) densities, Intel StrataFlash memory devices are the first to , .6 Figure 2. uBGA* Package (64-Mbit and 32-Mbit)9 Figure 3. TSOP Lead Configuration (32-Mbit) .10 Figure 4. SSOP Lead Configuration (64-Mbit and 32-Mbit) .11 Figure 5 , memory family contains high-density memories organized as 8 Mbytes or 4 Mwords (64-Mbit) and 4 Mbytes or 2 Mwords (32-Mbit). These devices can be accessed as 8- or 16-bit words. The 64-Mbit device is Mitsubishi
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TBST SYSTEMS 16-BIT 125MH
Abstract: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE 64M-BIT VIRTUAL CHANNEL SDRAM VERSION 2.0 Description The 64 M-bit Virtual Channel (VC) SDRAM is , mark show s m ajor revised points. © NECCorporation 1997 NEC Ordering Information 64M-BIT , read latency Note Under developm ent 2 Preliminary Data Sheet NEC 64M-BIT VIRTUAL , 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE [ x4, x8 ] /iPD4 5 NEC Memory Synchronous DRAM Microchip Technology
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SST38VF6401/6402/6403/64040 SST39VF6401B SST39VF6402B S71288 DS25008 DS25008A
Abstract: * Package (64-Mbit and 32-Mbit)9 Figure 3. TSO P Lead Configuration (32-M bit). 10 Figure 4. SSOP Lead Configuration (64-Mbit and 32-M bit).11 Figure 5. Memory M ap , memories organized as 8 Mbytes or 4 Mwords (64-Mbit) and 4 Mbytes or 2 Mwords (32-Mbit). These devices can be accessed as 8 - or 16-bit words. The 64-Mbit device is organized as sixty-four 128-Kbyte (131,072 , Intel StrataFlash memory devices are available in several package types. The 64-Mbit is available in 56 Intel
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phase controller L120 28F032SA 28F160S5 28F320S5 128-K G28F640J5-L150 E28F320J5-L120 AP-374 AP-644 AP-646
Abstract: 64Mbit Single Operating Voltage Serial Flash Memory With 133 MHz Dual- or Quad-Output SPI Bus , Solution, Inc.- www.issi.com Rev. 0A 11/12/2012 1 64Mbit Single Operating Voltage Serial Flash Memory , Silicon Solution, Inc.- www.issi.com Rev. 0A 11/12/2012 2 64Mbit Single Operating Voltage Serial , Integrated Silicon Solution, Inc.- www.issi.com Rev. 0A 11/12/2012 3 64Mbit Single Operating Voltage , /2012 4 64Mbit Single Operating Voltage Serial Flash Memory With 133 MHz Dual- or Quad-Output SPI -
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5 PEN PC TECHNOLOGY free 28F320J5-120 28F640J5-150
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