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TW9906-TB2-GR Intersil Corporation 3x10-bit Multi-Standard Comb Filter Video Decoder with YCbCr Component Input; TQFP80; Temp Range: 0° to 70° visit Intersil Buy
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SN74S482FN Texas Instruments 4-BIT, BIT-SLICE MICROPROCESSOR, PQCC20 visit Texas Instruments
PCM1760U-L Texas Instruments Multi-Bit Enhanced Noise Shaping 20-Bit A/D Conversion System 28-SOIC visit Texas Instruments
PCM1760U/1K Texas Instruments Multi-Bit Enhanced Noise Shaping 20-Bit A/D Conversion System 28-SOIC visit Texas Instruments

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64M-BIT

Catalog Datasheet MFG & Type PDF Document Tags

internal block diagram of mobile phone

Abstract: 64M-BIT with similar configuration. MB84VD23280FA : 64M-bit NOR-type dual-operation flash memory8M-bit SRAM MB84VD23381FJ : 64M-bit NOR-type dual-operation flash memory16M-bit Mobile FCRAM*2*3 MB84VD23481FJ : 64M-bit NOR-type dual-operation flash memory32M-bit Mobile FCRAM MB84VD23581FJ : 64M-bit NOR-type dual-operation flash memory64M-bit Mobile FCRAM The 64M-bit NOR-type dual-operation flash memory mounted in all these , the mobile devices. We have developed our own 16M/32M/64M-bit Mobile FCRAMs as ASMs *4 for mobile
Fujitsu
Original
internal block diagram of mobile phone 64M-BIT mobile phone circuit diagram 32-Mbit stacked MCP 32M-BIT
Abstract: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE 64M-BIT VIRTUAL CHANNEL SDRAM VERSION 1.1 Description The 64 Mbit Virtual Channel (VC) SDRAM is , 9 7 NEC 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE Ordering Information ( 1/2 , ) NEC 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE J Low Power Operation 1 _ Part number , 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE Part Number [ x4, x8 ] ÃPÃ4 5 65 8 2 1 G5 -
OCR Scan
M13022EJ5V0DS00 54PIN S54G5-80-9JF
Abstract: DATA SHEET MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM 64M-BIT VIRTUAL CHANNEL SDRAM Description The 64M-bit Virtual Channel (VC) SDRAM is implemented to be 100% pin and package compatible to , revised points. © 1997,1998 64M-BIT VIRTUAL CHANNEL SDRAM 5 Ordering Information (1/2 , 143 133 100 66 1 2 2M x 16 x 2 143 133 100 66 1 Note Under development 2 64M-BIT , 32 Channels Interface 1 : LVTTL 2 : SSTL Note Note Reserved 3 64M-BIT VIRTUAL CHANNEL NEC
Original
M13022EJ9V0DS00

32M-BIT

Abstract: MB82D02172A / MB82D04172 New products 32M-bit / 64M-bit Mobile FCRAM TM MB82D02172A / MB82D04172 FUJITSU has developed 32M-bit and 64M-bit Mobile FCRAMTMs, these memories provide large-density , developing a largedensity 64M-bit Mobile FCRAM with the same high access speed of 65ns and low power , developed: Second-generation 32M-bit product: MB82D02172A First-generation 64M-bit product: MB82D04172 , ) / 16M-bit (64M-bit product) data can be retained. In the conventional power down-mode (SLEEP mode
Fujitsu
Original
PARTIAL16M-

s6665

Abstract: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM with DOUBLE DATA RATE 64M-BIT VIRTUAL CHANNEL SDRAM VERSION 0.1 Description The 64 M-bit Virtual Channel (VC) SDRAM , Corporation 1998 NEC 64M-BIT VIRTUAL CHANNEL SDRAM with DOUBLE DATA RATE Ordering Information Part , Preliminary Data Sheet NEC 64M-BIT VIRTUAL CHANNEL SDRAM with DOUBLE DATA RATE Part Number [ x4 , : SSTL Note Reserve Preliminary Data Sheet 3 NEC 64M-BIT VIRTUAL CHANNEL SDRAM with
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s6665

intel DOC

Abstract: intel topside mark SPECIFICATION UPDATE Errata Density 64-Mbit Steppings 32-Mbit Steppings # A-0 1 X A , request. Specification Changes Density 64-Mbit Steppings # A-0 3 297848-005 X A , UPDATE Specification Clarifications Density 64-Mbit Steppings # A-0 32-Mbit Steppings A , ) Package 64-Mbit A-0 SSOP Ninth digit on topside FPO mark (third line) = "A," "E," or "F" 64-Mbit A-0 µBGA Ninth digit on packaging label FPO mark (third line) = "A," "E," or "F" 64-Mbit
Intel
Original
28F320J5 28F640J5 DA28F320J5-120 DA28F640J5-150 G28F320J5-120 G28F640J5-150 intel DOC intel topside mark intel topside mark TSOP

D4565821G5-A70-9J

Abstract: DA TA SH EE T NEC MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM 64M-BIT VIRTUAL , Corporation 1997,1998 NEC Ordering Information 64M-BIT VIRTUAL CHANNEL SDRAM ( 1/ 2 ) Part number , Number 64M-BIT VIRTUAL CHANNEL SDRAM [ x4, x8 ] ¿/PD4 5 NEC Memory 65 8 2 1 G5 - A70L Low , 64M-BIT VIRTUAL CHANNEL SDRAM [ X16, X32 ] ¿¿PD4 5 NEC Memory Synchronous DRAM 65 16 1 G5 - , d 4 NEC Pin Configurations /xxx indicates active low signal. 64M-BIT VIRTUAL CHANNEL
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OCR Scan
D4565821G5-A70-9J 13022EJ8V0D

cbx smd code

Abstract: SMD marking code ax2 HYB 39S64400/800CT(L) 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM · High Performance , and are available in TSOPII packages. Data Book 1 12.99 HYB 39S64400/800CT(L) 64-MBit , 39S64400/800CT(L) 64-MBit Synchronous DRAM TSOPII-54 (10.16 mm × 22.22 mm, 0.8 mm pitch) 8Mx8 16 M , and x8 Organized 64M-SDRAMs Data Book 3 12.99 HYB 39S64400/800CT(L) 64-MBit Synchronous , 4 12.99 HYB 39S64400/800CT(L) 64-MBit Synchronous DRAM Column Addresses A0 - A8, AP, BA0
Infineon Technologies
Original
P-TSOPII-54 cbx smd code SMD marking code ax2 PC100-222 PC133-333 smd marking T22 64-MB PC133 PC100 SPT03932 HYB39S64400/800/160CT

39S64160BT-8

Abstract: smd marking code bs HYB39S64400/800/160BT(L) 64MBit Synchronous DRAM 64 MBit Synchronous DRAM · High , with INFINEON' advanced 0.2µm 64MBit DRAM process technology. The device is designed to comply with , (L) 64MBit Synchronous DRAM Ordering Information Type Ordering Code Package Description , Select INFINEON Technologies 2 HYB39S64400/800/160BT(L) 64MBit Synchronous DRAM 4M x 16 8M , A6 A5 A4 VSS HYB39S64400/800/160BT(L) 64MBit Synchronous DRAM Column Addresses A0 - A9
Infineon Technologies
Original
39S64160BT-8 smd marking code bs TSOP RECEIVER MARKING AX5 sdram 4 bank 4096 16 smd code marking t6 HYB39S6440

SMD MARKING T20

Abstract: SMD MARKING CODE a09 HYB 39S64400/800CT(L) 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM · High Performance , and are available in TSOPII packages. Data Book 1 12.99 HYB 39S64400/800CT(L) 64-MBit , 39S64400/800CT(L) 64-MBit Synchronous DRAM TSOPII-54 (10.16 mm × 22.22 mm, 0.8 mm pitch) 8Mx8 16 M , and x8 Organized 64M-SDRAMs Data Book 3 12.99 HYB 39S64400/800CT(L) 64-MBit Synchronous , 4 12.99 HYB 39S64400/800CT(L) 64-MBit Synchronous DRAM Column Addresses A0 - A8, AP, BA0
Infineon Technologies
Original
SMD MARKING T20 SMD MARKING CODE a09 MARKING A3 SPT03933

SMD marking code ax2

Abstract: HYB 39S64800AT-8 HYB39S6440x/80x/16xAT(L) 64MBit Synchronous DRAM 64 MBit Synchronous DRAM Preliminary , is fabricated with SIEMENS'advanced quarter micron 64MBit DRAM process technology. The device is , HYB39S6440x/80x/16xAT(L) 64MBit Synchronous DRAM Ordering Information Type Ordering Code Package , (SSTL version only) Semiconductor Group 2 HYB39S6440x/80x/16xAT(L) 64MBit Synchronous DRAM , HYB39S6440x/80x/16xAT(L) 64MBit Synchronous DRAM Column Addresses A0 - A9, AP, BA0, BA1 Row Addresses
Siemens
Original
HYB 39S64800AT-8 39S64800AT-8 39S64160AT-8

4Mx4 dram simm

Abstract: TTP32 1Mx16 60; 70; 80 CP-50 TTP-50 5.0 1k refresh HM5164160 64Mbit DRAM FPM 4Mx16 50; 60 CP-50 TTP-50 3.0-3.6 8k refresh HM5164160A 64Mbit DRAM FPM 4Mx16 60; 70 CP-50 TTP-50 3.3 8k refresh HM5164165 64Mbit DRAM EDO 4Mx16 50; 60 CP-50 TTP-50 3.3 8k refresh HM5164165A 64Mbit DRAM EDO 4Mx16 50; 60; 70 , -32 TTP-32 3.3 8k refresh 64Mbit DRAM FPM 8Mx8 50; 60 CP-32 TTP-32 3.0-3.6
Hitachi Semiconductor
Original
DIMM-168 4Mx4 dram simm TTP32 SIMM72 dram card 60 pin 334k 32MByte ATA-68 CF-50 HB286015C3 HB286030A3 HB286030C3 HB286045A3

4Mx1 sram

Abstract: HM51W17805 DIMM-184 3.0-3.6 unbuffered, 2 bank, 4k refresh, 100 MHz, 125 MHz HB54A89FM 64Mbit MOD , 64Mbit DRAM FPM 4Mx16 50; 60 - CP-50 TTP-50 3.0-3.6 not for new design HM5164165 64Mbit DRAM EDO 4Mx16 50; 60 - CP-50 TTP-50 3.0-3.6 not for new design HM5164400 64Mbit DRAM FPM 16Mx4 50; 60 - CP-32 TTP-32 3.0-3.6 not for new design HM5164405 64Mbit DRAM EDO 16Mx4 50; 60 - CP-32 TTP-32 3.0-3.6 not for new design
Hitachi Semiconductor
Original
HB286008A3 HB286008C3 HB286015A3 HB286060A3 FP-28 4Mx1 sram HM51W17805 16Mx8 dram EDO HB289016A4 HN29W16814 HB286045C3 HB286075A3
Abstract: HYB39V64x0yT 64MBit Virtual Channel SDRAM 64MBit Virtual Channel SDRAM 1 Advanced , : LVTTL Refresh cycle: 4 K cycles / 64 ms Description The 64M-bit Virtual Channel (VC) SDRAM is , 64MBit Virtual Channel SDRAM 1.2 Ordering Information Table 1 Order Code VC SDRAM Device Type , Note: 1: Under development Semiconductor Group 2 HYB39V64x0yT 64MBit Virtual Channel SDRAM , Products are under development Semiconductor Group 3 HYB39V64x0yT 64MBit Virtual Channel SDRAM Siemens
Original
HYB39V64

SMD MARKING CODE aO9

Abstract: # HYB39S64400/800/160BT(L) I hìfbear 64MBit Synchronous DRAM 64 MBit Synchronous DRAM â'¢ High , system clock. The chip is fabricated with INFINEON' advanced 0.2|j,m 64MBit DRAM process technology. The , ) I hìfbear 64MBit Synchronous DRAM Ordering Information Type Ordering Code Package Description L , ICminer.com Electronic-Library Service CopyRight 2003 # HYB39S64400/800/160BT(L) I hìfbear 64MBit Synchronous , ICminer.com Electronic-Library Service CopyRight 2003 # HYB39S64400/800/160BT(L) I hìfbear 64MBit Synchronous
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OCR Scan
SMD MARKING CODE aO9
Abstract: SIEM ENS 64MBit Virtual Channel SDRAM HYB39V64x0yT 64MBit Virtual Channel SDRAM 1 , Description The 64M-bit Virtual Channel (VC) SDRAM is im plemented to be 100% pin and package com patible , HYB39V64800T -15 HYB39V64160T -15 H YB39V644402T -15 HYB39V64802T -15 HYB39V64162T -15 HYB39V64x0yT 64MBit , HYB39V644402TL -15 HYB39V64802TL -15 H YB39V64162TL -15 HYB39V64x0yT 64MBit Virtual Channel SDRAM Q -Num , 64MBit Virtual Channel SDRAM Partnum ber HYB 39V64400T -7 HYB 39V64800T -7 HYB 39V64160T -7 -
OCR Scan
Abstract: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE 64M-BIT VIRTUAL CHANNEL SDRAM VERSION 1.2 Description The 64 Mbit Virtual Channel (VC) SDRAM is , February 1998 NS CP(K) Printed in Japan The mark · shows major revised points. © 1997 64M-BIT , Preliminary Data Sheet 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE · [ Low Power Operation ]Note , Preliminary Data Sheet 3 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE Part Number [ x4, x8 ] µ NEC
Original
M13022EJ6V0DS00

TP032

Abstract: SC 2262 PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE 64M-BIT VIRTUAL CHANNEL SDRAM VERSION 2.0 Description The 64 M-bit Virtual Channel (VC) SDRAM is , mark show s m ajor revised points. © NECCorporation 1997 NEC Ordering Information 64M-BIT , read latency Note Under developm ent 2 Preliminary Data Sheet NEC 64M-BIT VIRTUAL , 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE [ x4, x8 ] /iPD4 5 NEC Memory Synchronous DRAM
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OCR Scan
TP032 SC 2262 M13022EJ7V0DS00

39s64160at-8

Abstract: P-TSOPII-54 HYB39S64400/800/160AT(L) 64MBit Synchronous DRAM 64 MBit Synchronous DRAM · High , 64MBit DRAM process technology. The device is designed to comply with all JEDEC standards set for , & 3. Semiconductor Group 1 10.98 HYB39S64400/800/160AT(L) 64MBit Synchronous DRAM , Select Semiconductor Group 2 HYB39S64400/800/160AT(L) 64MBit Synchronous DRAM 4M x 16 8M x , A6 A5 A4 VSS HYB39S64400/800/160AT(L) 64MBit Synchronous DRAM Column Addresses A0 - A9
Siemens
Original

BA0A11

Abstract: SIEMENS 64 MBit Synchronous DRAM HYB39S64400/800/160AT(L) 64MBit Synchronous DRAM · High , ' advanced quarter micron 64MBit DRAM process technology. The device is designed to comply with all JEDEC , latencies 2 & 3. Semiconductor Group 1 7.98 SIEMENS HYB39S64400/800/160AT(L) 64MBit , SIEMENS HYB39S64400/800/160AT(L) 64MBit Synchronous DRAM 4M X 16 8 4 8M 16M X X VDD , HYB39S64400/800/160AT(L) 64MBit Synchronous DRAM Block Diagram for 4 bank x 4M x 4 SDRAM Semiconductor
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OCR Scan
BA0A11 HYB39S 64400/800/160AT

date code marking intel strataflash

Abstract: flash device MARKing intel MEMORY SPECIFICATION UPDATE Errata Density 64-Mbit Steppings 32-Mbit Steppings # A-0 A , Changes Density 64-Mbit Steppings # 32-Mbit Steppings A-0 A-0 N/A 14 Specification Clarifications Density 64-Mbit Steppings # 32-Mbit Steppings A-0 A-0 N/A 297848-003 Page , correlates to a specific device stepping as illustrated in the table below: Stepping(1) Package 64-Mbit A-0 SSOP Ninth digit on topside FPO mark (third line) = "A" or "E" 64-Mbit A-0 µBGA
Intel
Original
date code marking intel strataflash flash device MARKing intel intel topside marking on flash memory intel flash date code marking uBGA device MARKing intel

S29GL064N application notes

Abstract: TSOP56 FOOTPRINT ) command. The refresh address is generated internally. 4096 REFA cycles within 64ms refresh 64Mbit memory
Spansion
Original
S29GL-N M29W320E M29W640G S29GL032N S29GL064N TSOP56 S29GL064N application notes TSOP56 FOOTPRINT Numonyx M29W640GS hardware protection of S29GL064N M29W320E/M29W640G

M2V64S40BTP

Abstract: M2V64S40BTP-7 generated internally. 4096 REFA cycles within 64ms refresh 64Mbit memory cells. The auto-refresh is
Mitsubishi
Original
M2V64S20BTP-7 M2V64S30BTP-7 M2V64S40BTP-7 M2V64S20BTP M2V64S30BTP M2V64S40BTP 4194304-WORD 2097152-WORD 1048576-WORD

TBST SYSTEMS

Abstract: 64-Mbit (8-Mbyte) and 32-Mbit (4-Mbyte) densities, Intel StrataFlash memory devices are the first to , .6 Figure 2. µBGA* Package (64-Mbit and 32-Mbit)9 Figure 3. TSOP Lead Configuration (32-Mbit) .10 Figure 4. SSOP Lead Configuration (64-Mbit and 32-Mbit) .11 Figure 5 , memory family contains high-density memories organized as 8 Mbytes or 4 Mwords (64-Mbit) and 4 Mbytes or 2 Mwords (32-Mbit). These devices can be accessed as 8- or 16-bit words. The 64-Mbit device is
Mitsubishi
Original
TBST SYSTEMS 16-BIT 125MH
Abstract: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE 64M-BIT VIRTUAL CHANNEL SDRAM VERSION 2.0 Description The 64 M-bit Virtual Channel (VC) SDRAM is , mark show s m ajor revised points. © NECCorporation 1997 NEC Ordering Information 64M-BIT , read latency Note Under developm ent 2 Preliminary Data Sheet NEC 64M-BIT VIRTUAL , 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE [ x4, x8 ] /iPD4 5 NEC Memory Synchronous DRAM Microchip Technology
Original
SST38VF6401/6402/6403/64040 SST39VF6401B SST39VF6402B S71288 DS25008 DS25008A

phase controller L120

Abstract: "NOR Flash" intel retention * Package (64-Mbit and 32-Mbit)9 Figure 3. TSO P Lead Configuration (32-M bit). 10 Figure 4. SSOP Lead Configuration (64-Mbit and 32-M bit).11 Figure 5. Memory M ap , memories organized as 8 Mbytes or 4 Mwords (64-Mbit) and 4 Mbytes or 2 Mwords (32-Mbit). These devices can be accessed as 8 - or 16-bit words. The 64-Mbit device is organized as sixty-four 128-Kbyte (131,072 , Intel StrataFlash memory devices are available in several package types. The 64-Mbit is available in 56
Intel
Original
phase controller L120 28F032SA 28F160S5 28F320S5 128-K G28F640J5-L150 E28F320J5-120 E28F320J5-L120 AP-374 AP-644

5 PEN PC TECHNOLOGY free

Abstract: 64Mbit Single Operating Voltage Serial Flash Memory With 133 MHz Dual- or Quad-Output SPI Bus , Solution, Inc.- www.issi.com Rev. 0A 11/12/2012 1 64Mbit Single Operating Voltage Serial Flash Memory , Silicon Solution, Inc.- www.issi.com Rev. 0A 11/12/2012 2 64Mbit Single Operating Voltage Serial , Integrated Silicon Solution, Inc.- www.issi.com Rev. 0A 11/12/2012 3 64Mbit Single Operating Voltage , /2012 4 64Mbit Single Operating Voltage Serial Flash Memory With 133 MHz Dual- or Quad-Output SPI
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OCR Scan
5 PEN PC TECHNOLOGY free 28F320J5-120 28F640J5-150
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