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62646TU Integrated Device Technology Inc WAFER-0, Wafer visit Integrated Device Technology
ISL6264CRZ-T Intersil Corporation Two-Phase Core Controller for AMD Mobile Turion CPUs; QFN40; Temp Range: 0° to 70° visit Intersil Buy
ISL6264CRZ Intersil Corporation Two-Phase Core Controller for AMD Mobile Turion CPUs; QFN40; Temp Range: 0° to 70° visit Intersil Buy
CY74FCT162646ATPVC Texas Instruments 16-Bit Bus Transceivers and Registers with 3-State Outputs 56-SSOP -40 to 85 visit Texas Instruments
FCT162646CTPVCTG4 Texas Instruments FCT SERIES, DUAL 8-BIT REGISTERED TRANSCEIVER, TRUE OUTPUT, PDSO56, 0.300 INCH, GREEN, PLASTIC, SSOP-56 visit Texas Instruments
74FCT162646CTPVCG4 Texas Instruments 16-Bit Bus Transceivers and Registers with 3-State Outputs 56-SSOP -40 to 85 visit Texas Instruments

6264 RAM

Catalog Datasheet MFG & Type PDF Document Tags

6264 RAM

Abstract: 74CT573 ) holding the instructions for normal operations, and 8kbytes of CMOS RAM (the 6264) to store conversion , 74HCT139 part of address decode IC7 27C64 ROM IC8 6264 RAM* IC9 74HCT245 data-bus buffer *IC8 AND IC9 , mi I/O CONTROL _A V RAM DATA IÏIS butter A. -J I- 4QG0H TfflH cûooh cum AUXMf UAX6HI , family that requires external ROM for program storage. Internally, it has 256 bytes of RAM and four 8 , required by the external ROM, RAM and MAX155. A third (P3) is needed for the serial link and I/O control
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MAX233 6264 RAM 74CT573 D25 connector 6264* ram IC380 80C32 RS-232 MAX660 55EVK

ic 74hc245

Abstract: M68HC11evm (MC68HC11A1FN or MC68HC11E1FN). When evaluating or programming an MC68HC11EX family device, a 6264 (8K RAM , fabricated jumper between pins 2 and 3. A 6264 (8K RAM) device must also be installed at socket location U15 , an MC68HC11AX MCU in expanded mode, you may use additional emulation RAM by installing a 6264 (8K RAM , may be downloaded to the user program RAM through the host or terminal port connectors. User code may , the user reset switch. MCU device ROM is simulated by write protecting user program RAM during program
Motorola
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ic 74hc245 M68HC11evm IC 74HC00 eeprom copy schematic 27128 IC 74hc74 XC68HC11A1FN M68HC11EVM/AD8 M68HC11EVM M68HC11EVM/D

ic 6264

Abstract: M68HC11evm programming an MC68HC11EX family device, a 6264 (8K RAM) device is installed at socket location U15. This , U2) and place the fabricated jumper between pins 2 and 3. A 6264 (8K RAM) device must also be , RAM by installing a 6264 (8K RAM) device in the socket at location U15 and placing the fabricated , one-line assembler/disassembler, or may be downloaded to the user program RAM through the host or terminal , user program RAM during program execution. Independent 150-19.2K baud rate selection capabilities are
Freescale Semiconductor
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ic 6264 MC68HC811A2 MCM6064P EXORCISER 6264 16K EEPROM motorola 6264 ram

74c920

Abstract: ram 6164 h a r r is c m o s ram s DESCRIPTION HARRIS Industry CMOS RAM Cross Reference AMD EDI FUJ ITSU HIT ACHI IDT M ITSU MOT BISHI OROLA N A T IONAL NEC OKI RCA SMOS TOSH , * 8464 6264 7164 7M864 8M864 5164 6164 6164 4464 6264 2064 2264 5564 5565 128K CMOS RAM MODULE 16Kx8, 28 Pin Asynchronous H M -8816H * 8816H 256K CMOS RAM MODULE 32Kx8 , * 8832 1M CMOS MODULE 128x8/64Kx16 * C M O S RAM M o d u le H M -91M 2* I CMOS M EM O R Y
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74C929 74C930 99C88 74c920 ram 6164 6116 RAM 2116 ram 2064 ram HM-6508 HM-6518 HM-6551 HM-6561

STATIC RAM 6264

Abstract: RAM 6264 6264 8Kx8 High Speed CMOS Static RAM FEATURE ·Single + 5V Power Supply ·Access Time: 100/120/150ns , "SILICON I N T E G R A T O ETE D BssaaflT oaaaoio 7 ` T-mp-a.s- CMOS STATIC RAM SIS 6116/SIS 6116H 2Kx8 High Speed CMOS Static RAM FEATURE ·Single + 5V supply and high density 24 , standby: 0,5 ¿¿W(typ. for LP) ·Low power operation: 250mW (typ.) ·Completely static RAM: No clock or , A6 tz 4 A5 IZ 5 A4 IZ 6 SIS A3 tz 7 6264 A2 IZ s A f tz 9 AO IZ 1Û 1/01 IZ 11 1/02 IZ 12 1/03 IZ 13
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STATIC RAM 6264 RAM 6264 6264 EPROM 6264 static RAM rom 6116 6264 cmos ram
Abstract: PO2 O RAM SIZE 128-BYTE 256-BYTE 1024-BYTE 256-BYTE SIGNAL UPD78212CW-618(2/3) 51 36 , TEMPORARY REGISTERS SP PSW BOOLEAN PROCESSOR MICRO ROM MICRO SEQUENCER RAM(256-BYTE) GR MACRO SERVICE CHANNEL 1,62-64 DATA BUS PO0-PO3 REAL-TIME OUTPUT PORT (4 BITSx2) PO4-PO7 6,7 , P2 44-47,58-61 P0 36-43 PORT 1-5,62-64 51 AV REF 50 AGND 42 INTP5 RD 8 , TxD P7 P70 -P75 RAM 16 X1 15 X2 14 RESET 48 EA - -
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UPD78212 UPD78214 UPD78218 UPD78P214 P67/REFRQ/AN7 P66/WAIT/AN6

GR881

Abstract: STATIC RAM 6264 GR881 (8K x 8) NON-VOLATILE RAM GR881 (8K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR881 is a 8192 word by 8 bits (8K x 8) nonvolatile CMOS Static Ram, fabricated from advanced , conforms to the JEDEC standards and is fully compatible with normal static RAM. The power down circuit , 8 bits (8K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology , and is fully compatible with normal static RAM. The power down circuit is fully automatic and is
Greenwich Instruments
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8k static ram 6264 6264 8k 2000/95/EC

GR881-H

Abstract: STATIC RAM 6264 GR881-H (8K x 8) NON-VOLATILE RAM GR881-H (8K x 8) NON-VOLATILE RAM READ CYCLE > Address , < >< > DIN t WC < REPLACES . 6264., 5565., etc. tAS < > < t WP >< t WR t WHZ > < < tDS t DH >< > DIN REPLACES . 6264., 5565., etc. 18 > 37 , ) NON-VOLATILE RAM GR881-H (8K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR881-H is an industrial temperature range, 8192 word by 8 bits (8K x 8) non-volatile CMOS Static Ram
Greenwich Instruments
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GR88-H1 A0-A12

organizational structure samsung

Abstract: NMS256X8 Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K X SH ARP MODEL LH5116 COMPETITIVE VENDOR AMD Harris Hitachi Hyundai Intel Matra HMS Mosel S-MOS SGS-Thomson , M5M5165 MS6264L MCM60L64 UPD4464 MS M 5165A SRM2264 KM 6264 IMS 1630 MK6264 CXK5864B TC5563 TC5564 TC5565 , Toshiba Toshiba UMC 80/100 ns DIP/SKDIP/SOP/TSOP(l) I SHARP 4-241 Static RAM Cross , SHARP Static RAM Cross Reference ORGANIZATIONAL STRUCTURE 64K X 4 w/OE SH ARP MODEL LH52253
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HM6116A TC5518 IDT71256 51256SL M5M5256 MN44256 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 TC5565 "cross reference" 256K RAM HM62256 CDM6116 HY6116 HM6116 MS6516 SRM2016

RAM 6264

Abstract: 0F000H-0FFFFH SPAC 1 SST89E58RD2 768 RAM 1.1 P0RAM(:6264,8255,RC500, ,LCD),768 BYTERAM, AUXR(8EH)D1(EXTRAM)1,. EXTRAM=1 1.2 : START: MOV 8EH,#02H ;,AUXREXTRAM=1, ;RAM,768RAM 1.3 C51 : sfr AUXR = 0x8E; // sst89e516RD2 AUXR main(void) { AUXR = 0x02; //, AUXR EXTRAM=1, // RAM , 768 RAM , SST SPAC SST89C58SST89E58RD2 SST89E58RD2 768 RAM . 2 , (AUXR): SST89C58 AUXR NC D0 3.4 RAM: NC D7 D2 D1 SST89E58RD2 08EH NC
SPAC
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0F000H-0FFFFH 01FFFH SST89E516RD2 E000H-FFFFH 085H 0000H 0E000H 0E000-0FFFFH SST89E58

STATIC RAM 6264

Abstract: 6264 RAM 94 - 6 4 K CMOS Static RAM (8 1 9 2x8) 28PIN 6264 a a tt « iSSEB CO X A , ^ y '/ ft fi * M A t! [*typ] ¡B H [*typ] « # IMC max (ns) TCAC nax (ns) TOE max (ns) TOH lin (ns) TOD nax (ns) TWP nun (ns) TDS lin (ns) TDH min (ns) TTO min (ns) T»R ia>: (ns) VDD or VCC (V) I DD 1 I »0 STANDBY .ax (ISB/1SB2) (mA) («A) VII max (V) VIH min (V) Ci max (pF) VOL/1 VOL max (V/mA) V0H/1 VOH min (V/mA) Co max (pf) uP04368CR/LA-20 NEC 0â'"70 20 20 10 3 8 12 10 0 0 2 4. 5â'"5. 5 120 20/2 0.8
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UPD4464G-12L UPD4464G-15 UPD4464G-20L CI 6264 NEC 200 uPD4464G-15L uPD4464G-20 P04368CR/LA-20 UP04464G-12 PD4464G-15L PD4464G-20

4464 ram

Abstract: us4k HARR IS AM O In d u s try CMOS RAM C ross R eference F U J IEDI rrsu H IT AC H I ID T M , * 99C 88 8808A 8808 8464 6264 7164 7M 864 S M 664 5164 8184 6164 4464 8264 2064 2264 5564 5585 1 28 K CM O S RAM M O D U LE 16K x 8, 2 8 Pin A s y n c h ro n o u s H M -8 8 1 6 H 8816H 2 5 6 K CM O S RAM M O D U LE 32K x 8 / 1 6K x 16 48 Pin M o d u le A s y n c h ro n
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4464 ram us4k 6508 ram 6116 ram 2k 91L24

ram 6264

Abstract: motorola 6264 ram M O T O R O L A SC ( M E M O R Y / A S I C ) MhE D b 3 b 7 5 S l 0 0 0 0 1 3 0 3 M .H0T3. .T -to -JS -J ? 8K x 8 Bit Fast Static RAM MCM6264C PIN ASSIGNMENT NC [ 1 · A12 [ 2 A7 C 3 A6 [ 4 A5 [ 5 PIN NAMES A0-A12 .Address Input DQ0-DQ7 . . . . . . . . . . Data Input/Output W _ . . . . . . . Write Enable G . , 6264 C X XX XX r Shipping Method (R2 = Tape & Reel, Blank = Rails) Speed (12 = 12 ns
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M193 6264 6a3t MCM6264CP12 MCM6264CNJ12 MCM6264CNJ12R2

RAM 6264

Abstract: 6264 static RAM INSTRUMENTS USA · · · · · · · Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programming cycles , normal Static RAM and offers immediate conversion to non volatile memory of all or part of a system. Data , Vdd to OV of 15uS. REPLACES: 6264, 5565, etc. MAXIMUM RATINGS Symbol CL Q. Min -0.3 -0.3 -20 , Static RAM, fabricated from advanced silicon gate CMOS tech nology and a high reliability lithium power
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NVR8

Abstract: GREENWICH INSTRUMENTS GREENWICH INSTRUMENTS LTD · · · · · · · Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM No limit to number of programming cycles Fits standard 28-pin socket Write Protectable 8K X 8 NON-VOLATILE RAM NVR8 I 3 7 5 , normal Static RAM chips, and offers immediate conversion to non-volatile memory of all or part of a system, able to retain data and survive power-downs for up to 10 years. REPLA C ES: HM 6264 - TC 5565
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NVR8 GREENWICH INSTRUMENTS

MS6264L-10PC

Abstract: MS6264L-70PC expansion Data retention as low as 2V Description The M S 6264 is a high performance, low power C M O S static RAM organized as 8192 words by 8 bits. The device supports easy memory_expansion with both an , supply. All inputs and outputs are TTL compatible. Data is retained to as low as V c c = 2V. The M S 6264 , -bit words in the RAM. MS6264 pins will be in the high impedance state when G is inactive. W E1 E2 , ports are used to read data from or write data into the RAM. The output enable input is active LOW .
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S6264 MS6264L-70PC MS6264L-10PC MS6264L-10FC 6264 ttl ram MS6264L-10 MS6264L10FC S6264L MS6264L-70FC

external RAM ic 6264

Abstract: 74CT573 27C64 6264 address latch part of address decode part of address decode ROM RAM* IC9 , ROM 80C32 J2 RAM MAX155 INPUTS ADDRESS BUS 5V 0000H3FFFH MAX696 J1 MANUAL , of RAM and four 8-bit input/output (I/O) ports. Two of these ports (P0 and P2) are for operating the address and data lines required by the external ROM, RAM, and MAX155. A third (P3) is needed for the , of 8kB of EPROM (the 27C64) holding the instructions for normal operations, and 8kB of CMOS RAM
Maxim Integrated Products
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external RAM ic 6264 28PIN IC ram 6264 with microprocessor MAX155 evaluation kit 27C64 ROM maxim 8051 microcontroller with built in ADC 40 MAX155EVKIT
Abstract: GREENWICH 8K x 8 NON-VOLATILE RAM INSTRUMENTS LTD â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ GR881 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM No limit , pincompatible with normal Static RAM chips, and offers immediate conversion to non-volatile memory of all or , . -H Iâ'" 5 I I I 73 4 hH 2 54 I- 5- -! - REPLACES: 6264 -
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TMPZ84C00P

Abstract: Aslic Microelectronics generator ROM which can control an external display RAM of up to 64 Kbytes.Allocation of text, graphics and external character generator RAM can be made easily and the display window can be moved freely within the , oscillation : 30 to 100 pF Built-in feedback resistor : 900 k (typ.) iExternal display RAM must be static RAM. The AX6963 cannot refresh D-RAM. iThe attribute functions can only be used in Text mode.They , d7 (TO / FROM SRAM) ADDRESS POINT CG RAM POINT RAM DATA BUFFER RAM DATA LATCH
Electronic Assembly
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TMPZ-80 AX6940 TMPZ84C00P Aslic Microelectronics TMP82C55 84c00p AX6942

STATIC RAM 6264

Abstract: ram 6264 CYPRESS PRELIMINARY CY6264 Features â'¢ 55,70 ns access times â'¢ CMOS for optimum speed/power â'¢ Easy memory expansion with CEi, CE2, and OE features â'¢ TTL-compatible inputs and outputs â'¢ Automatic power-down when deselected Functional Description The CY6264is a high-performance CMOS static RAM , addressed by the address present 8K x 8 Static RAM on the address pins (Ao through A12). Reading the device , Operating Ranged 6264 -55 6264 -70 Parameter Description Mill. Max. Min. Max. Unit READ CYCLE lRC
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DD172 Hyundai Semiconductor 6264 Hyundai 6264 450-M 300-M
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