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615N

Catalog Datasheet MFG & Type PDF Document Tags

615N

Abstract: Q67041-S2843 Preliminary Data BSO 615N SIPMOS® Small-Signal-Transistor Features Product Summary · , · Logic Level · dv/dt rated Type Package Ordering Code BSO 615N SO 8 Q67041-S2843 , Data Sheet 55/150/56 1 05.99 BSO 615N Thermal Characteristics Parameter Symbol , 2 05.99 BSO 615N Electrical Characteristics Parameter Symbol Values Unit min , V, ID = 2.6 A, RG = 16 Data Sheet 3 05.99 BSO 615N Electrical Characteristics, at
Infineon Technologies
Original
615N

615N

Abstract: 615n60 BSO 615N Preliminary data SIPMOS ® Small-Signal Transistor · Dual N-channel · Enhancement , ) Package Marking Ordering Code BSO 615N 60 V 2.6 A 0.15 P-DSO-8 Q 67000-S. . . , /09/1997 BSO 615N Preliminary data Thermal Characteristics Symbol Parameter Values , 0.12 0.15 23/09/1997 BSO 615N Preliminary data Electrical Characteristics, at Tj = 25 , BSO 615N Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Siemens
Original
615n60

hP 3700

Abstract: 3700dn -sheet multipurpose tray Base model plus: Base model plus: Base model plus: · HP Jetdirect 615n internal EIO print server · HP Jetdirect 615n internal EIO print server · HP Jetdirect 615n internal , IEEE 1284-compliant bidirectional parallel port, USB 1.1 port, HP Jetdirect 615n internal print server , , yellow, black) magenta, yellow, black), 500-sheet paper HP Jetdirect 615n internal print server HP Jetdirect 615n internal print server tray, HP Jetdirect 615n internal print server 1 2 3 Print speed
Hewlett-Packard
Original
hP 3700 3700dn HP 2400 jetdirect J3265A jetdirect 615N 10/100B

BS0615N

Abstract: SMD diode KL Infineon ttchnolog i*i BSO 615N Preliminary Data SIPMOS® Small-Signal-Transistor Features , Continuous drain current fe 2.6 A Top View SIS000S8 Type Package Ordering Code BSO 615N SO 8 Q67041-S2843 , /150/56 Data Book 0235bD5 G13EÛ03 HD 162 06.99 Infineon ttchnolog i*i BSO 615N Thermal , 06.99 Infineon technologies BSO 615N Electrical Characteristics Parameter Symbol Values Unit _ , ©hnoiogi«* BS0 615N Power Dissipation Ptot = f5v 2.4 w
-
OCR Scan
SMD diode KL smd diode marking code ug smd diode marking FG 26APulsed marking code ABB SMD smd diode Mu P-T0262-3-1/ P-T0263-3-2/D2PAK GPT09085 SQT-23 X23-3-1 D133777

RE65N

Abstract: 615N Series RE Wirewound Resistors, Aluminium Housed, Chassis Mount Specifications Type RE RE RE RE RE RE RE RE RE RE RE RE 605 605N 610 610N 615 615N 630 630N 640 640N 650 650N Power rating P40 W see next page Resistance range see next page Tolerances % see next page Temperature coefficient 10-6 * K-1 max. cont. work. voltage VRMS , ,610,615,630 RE605N,610N,615N,630N P L K 89 ±0,8 2 - 4,8±0,2 46 ±0,8 13
VITROHM Portuguesa
Original
MIL-PRF-18546 RE60G RE65G RE65N RE70G RE615N E SERIES RESISTORS 0R1-0R99 RE605 RE60N RE610

m595

Abstract: RE630 Series RE Wirewound Resistors, Aluminium Housed, Chassis Mount Specifications Type Nominal Power rating P 25 Resistance range Tolerances Temperature coefficient W % 10 *K -6 -1 VITROHM RE 605 RE RE 605N 610 RE RE 610N 615 RE RE 615N 630 RE RE 630N 640 RE RE 640N 650 RE 650N See page 2 See page 2 See page 2 0R1 ­ 0R99 ± 100 1R ­ 9R9 ± 50 10R ± 20 Max. working voltage , D C A N VITROHM F E J RE605,610,615,630 RE605N,610N,615N,630N M B P K L 89
VITROHM Portuguesa
Original
RE630 m595 60068-2-20-T RE615 RE640 RE650

615N

Abstract: PAGE G ° Pb-free lead plating; RoHS compliant Marking 615N Rev. 1.1 Page 1 2007-02-21 Rev. 1.1 Page 2 2007-02-21 Rev. 1.1 Page 3 2007-02-21 Rev. 1.1 Page 4 2007-02-21 Rev. 1.1 Page 4 2007-02-21 Rev. 1.1 Page 5 2007-02-21 Rev. 1.1 Page 6 2007-02-21 Rev. 1.1 Page 7 2007-02-21 Infineon Technologies
Infineon Technologies
Original
PAGE transistor marking PB MARKING 615n

615N

Abstract: MARKING 615n G ° Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101 Marking 615N Rev. 1.2 Page 1 2012-04-04 Rev. 1.2 Page 2 2012-04-04 Rev. 1.2 Page 3 2012-04-04 Rev. 1.2 Page 4 2012-04-04 Rev. 1.2 Page 4 2012-04-04 Rev. 1.2 Page 5 2012-04-04 Rev. 1.4 Page 6 2012-04-04 Rev. 1.2 Page 7 2012-04-04 Infineon Technologies
Infineon Technologies
Original
AEC marking
Abstract: BSO 615N SIPMOS® Small-Signal-Transistor Product Summary Features 60 V à DS(on) 0.15 Q. b 2.6 A â'¢ Dual N Channel Drain source voltage VDS â'¢ Enhancement mode Drain-Source on-state resistance â'¢ Avalanche rated Continuous drain current Parameter Symbol Continuous drain current, one channel active Id 2.6 Pulsed drain current, one channel active /Dpulse 10.4 Value Unit A Ta = 25 â'C e as Avalanche energy -
OCR Scan

U.FL-LP-088

Abstract: HRMJ-MMCXP . 15N 615N 1.2 16. DC6GHz 1.2 04GHz ,1.3 46GHz 0.045GHz6GHz MMCX-LR-SMT
Hirose Electric
Original
CL339-0005-8-40 U.FL-LP-088 HRMJ-MMCXP CL339-0021-4-40 UFL-LP-066 MMCX-LR-SMT cl339 RG-178B/U RG-316/U 59MAX 500V1 1000H 045GH

BUZ MOSFET

Abstract: mosfet BUZ 326 0.075 1.2. 2.0 4.2 SO-8 BSO 615N 60 0.15 1.2. 2.0 2.6 SO-8 BSO 615NV 60 0.12 2.1. 4.0 3.1 , -4.0.-2.1 -8.0 SPU08P05 Type BSO 307N BSO 615N BSO 615NV SOT-89 I-PAK I FR [A] 8.0 25.0 , 3.1 Type Product Numbering System BSO 307N BSO 615N BSO 615NV Siemens I D [A] Type , Type Product Numbering System BSO 307N BSO 615N BSO 615NV Siemens I D [A] Type
Siemens
Original
BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 PL-03-821 B152-H6493-G5-X-7600

211SB

Abstract: 211sa . [611, 611N, 613, 613N, 615, 615N] 84 96 186 296 296 30 34 42 258 138 112 300 316 300 308
-
OCR Scan
211SB 211sa 211NE 211NA S3 UM1 FBR620

d012 relay

Abstract: 611ND024 MODEL 1 Pole type Standard s 2 Poles type K type FBR611, 611N FBR613, 613N FBR615, 615N
Fujitsu Takamisawa
Original
FBR611ND024 d012 relay 611ND024 FBR621 D024 - M relay 621N FBR610 FBR600

97977

Abstract: 4 0 to + 8 5 °C ORDER CODE N E 615N N E 615D S A 615N S A 615D 240 Philips
-
OCR Scan
97977 NE/SA615

parker rs-232

Abstract: opto 22 controller AT6n50 610n 615n 620n 625n 627n *A10.0000 [A], AA, AD, ADA, DRES, ERES, GO, MC, SCALE, SCLA
Opto 22
Original
parker rs-232 opto 22 controller CM AD 6000s 1071-001129--NOVEMBER 800-321-OPTO 800-832-OPTO 800-TEK-OPTO

BUZ MOSFET

Abstract: mosfet BUZ 326 SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U MOS-Transistors in alphanumeric order BS 107 BS 170 BSO 307N B S 0 615N BSO 615NV BSP 88 BSP 89 BSP 92 BSP 123 BSP 125 BSP 129 BSP 135 BSP 149 BSP 170 BSP 171 BSP 295 BSP 296 BSP 297 BSP 298 BSP 299 BSP 300 BSP 315 BSP 316 BSP 317 BSP318S BSP 319 BSP 320S BSP 324 BSP 372 BSP 373 BSS 84 BSS 87 BSS 88 BSS 89 BSS 92 BSS 98 BSS 100 BSS 101 BSS 110 BSS 119 BSS 123 BSS 124 B S S 125 BSS 129 BSS 131 BSS 135 BSS 138 BSS
-
OCR Scan
BUZ MOSFET 334 spd14n05 mosfet BUZ 349 BUZ 100 MOSFET mosfet buz 90a km 8560

BWL 0614

Abstract: 503 Vitrohm XSGDWHG RQO\ HYHU\ çé EDXGï 7DEOH ìë VKRZV WKH QRLVH PDUJLQ FRGLQJï 7R FDOFXODWH WKH 615ñ XVH WKLV
VITROHM Portuguesa
Original
ZC0204 ZOM0207 BWL 0614 503 Vitrohm crf253-4 350-8 R015 resistencias smd FUSIBLE RESISTANCE WIRE WOUND RESISTOR 218-8 P-2785-635 D-25337 ZC0207

0204 melf

Abstract: RWC 5020 DOWKRXJK XSGDWHG RQO\ HYHU\ çé EDXGï 7DEOH ëë VKRZV WKH QRLVH PDUJLQ FRGLQJï 7R FDOFXODWH WKH 615ñ XVH
VITROHM Portuguesa
Original
0204 melf RWC 5020 RWN 5020 KN352-011 vitrohm 0309 type KWV306-3 P-2785-653 24/E96

W76068

Abstract: eo537 Series RE Wirewound Resistors, Aluminium Housed, Chassis Mount Specifications Type Nominal Power rating P 25 Resistance range Tolerances Temperature coefficient W % 10 *K -6 -1 VITROHM RE 605 RE RE 605N 610 RE RE 610N 615 RE RE 615N 630 RE RE 630N 640 RE RE 640N 650 RE 650N See page 2 See page 2 See page 2 0R1 ­ 0R99 ± 100 1R ­ 9R9 ± 50 10R ± 20 Max. working voltage , D C A N VITROHM F E J RE605,610,615,630 RE605N,610N,615N,630N M B P K L 89
Level One Communications
Original
W76068 eo537

ic w53

Abstract: W76068 Series RE Wirewound Resistors, Aluminium Housed, Chassis Mount Specifications Type RE RE RE RE RE RE RE RE RE RE RE RE 605 605N 610 610N 615 615N 630 630N 640 640N 650 650N Power rating P40 W see next page Resistance range see next page Tolerances % see next page Temperature coefficient 10-6 * K-1 max. cont. work. voltage VRMS , ,610,615,630 RE605N,610N,615N,630N P L K 89 ±0,8 2 - 4,8±0,2 46 ±0,8 13
Level One Communications
Original
ic w53 W7685

Acceleration Sensors for 30G Acceleration

Abstract: MMA320 0.075 1.2. 2.0 4.2 SO-8 BSO 615N 60 0.15 1.2. 2.0 2.6 SO-8 BSO 615NV 60 0.12 2.1. 4.0 3.1 , -4.0.-2.1 -8.0 SPU08P05 Type BSO 307N BSO 615N BSO 615NV SOT-89 I-PAK I FR [A] 8.0 25.0 , 3.1 Type Product Numbering System BSO 307N BSO 615N BSO 615NV Siemens I D [A] Type , Type Product Numbering System BSO 307N BSO 615N BSO 615NV Siemens I D [A] Type
Freescale Semiconductor
Original
AEC-Q100 MMA3204EG Acceleration Sensors for 30G Acceleration MMA320 SOIC-20 soic20 freescale MMA3204KEG MMA3204 20-LEAD

LC74HC27

Abstract: T370 BSO 615N SIPMOS® Small-Signal-Transistor Product Summary Features 60 V à DS(on) 0.15 Q. b 2.6 A â'¢ Dual N Channel Drain source voltage VDS â'¢ Enhancement mode Drain-Source on-state resistance â'¢ Avalanche rated Continuous drain current Parameter Symbol Continuous drain current, one channel active Id 2.6 Pulsed drain current, one channel active /Dpulse 10.4 Value Unit A Ta = 25 â'C e as Avalanche energy
-
OCR Scan
LC74HC27 T370 739T IB180 DIP14 8275VY
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