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60V-100V

Catalog Datasheet MFG & Type PDF Document Tags
Abstract:  Rugged Power MOSFETs IRFF120R, IRFF121R, IRFF I22R, IRFF123R File Number 2023 Avalanche Energy Rated N-Channel Power MOSFETs 5.0A and 6.0A, 60V-100V ibs(on) = 0.30n and 0.400 Features: â  Single pulse avalanche energy rated â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM The IRFF120R, IRFF121R, IRFF122R and IRFF123R are advanced power MOSFETs designed, tested -
OCR Scan
I22R IRFFI22R 92CS-42S60
Abstract: 3875081 G E SOLID STATEIIÏ DET| 3A7S0Ã1 DDlflHbM â¡ | o T-// _!-1-;-1- Standard Power MOSFETs File Number 1565 IRF120, IRF121, IRF122, IRF123 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 7.0A and 8.0A, 60V-100V ros(on) = 0.30 fi and 0.40 fi Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics m High input impedance â  Majority carrier device N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM -
OCR Scan
OA 207 B diode IRFI20 dioda 30 Ampere IRFt20 367SQ61
Abstract: -Standard Power MOSFETs File Number 1564 IRFF130, IRFF131, IRFF132, IRFF133 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 7.OA and 8.0A, 60V-100V rDs(on) = 0.18 Q and 0.25 fi Features: â  SOA is power-dissipation limited m Nanosecond switching speeds m Linear transfer characteristics â  High input impedance â  Majority carrier device 92CS-33741 TERMINAL DIAGRAM The IRFF130, IRFF131, IRFF132 and IRFF133 are -
OCR Scan
C 3259 T0-205AF 92CS-37555 RFF13
Abstract: Rugged Power MOSFETs_ IRF520R, IRF521R, IRF522R, IRF523R Avalanche Energy Rated N-Channel Power MOSFETs 7.0A and 8.0A, 60V-100V ros(on) = 0.30C2 and 0.40CJ Features: â  Single pulse avalanche energy rated â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance File Number 1994 N-CHANNEL ENHANCEMENT MODE 0 TERMINAL DIAGRAM TERMINAL DESIGNATION The IRF520R, IRF521R, IRF522R and IRF523R are advanced power -
OCR Scan
IRF523 30C2 40CJ T0-220AB 92CS-39528 IRF52GIR IRFS22R I2CS-42M0 UC1-41
Abstract: Standard Power MOSFETs- IRF120, IRF121, IRF122, IRF123 Power MOS Field-Effect Transistors File Number 1565 N-Channel Enhancement-Mode Power Field-Effect Transistors 7.0A and 8.0A, 60V-100V ros(on) = 0.30 O and 0.40 fi Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance m Majority carrier device N-CHANNE1. ENHANCEMENT MODE GO-! TERMINAL DIAGRAM The IRF120, IRF121, IRF122 and IRF123 are n-channel -
OCR Scan
IRF1 CQ 1565 RT IRF1Z0 RF123 TQ-204AA 75BVOSS
Abstract: . 300V. 400V Repetitive Peak Reverse Voltage, VBRM. -
OCR Scan
AD107-AD111 AD100 AD107 AD114 AD102 AD103 LTRW ad1141 AD111 AD100-AD104
Abstract: Rugged Power MOSFETs IRF530R, IRF531R, IRF532R, IRF533R N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM File Number 1993 Avalanche Energy Rated N-Channel Power MOSFETs 12A and 14A, 60V-100V rDs(on) = 0.180 and 0.25fi Features: â  Single pulse avalanche energy rated â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance TERMINAL DESIGNATION The IRF530R, IRF531R, IRF532R and IRF533R are advanced power MOSFETs designed, tested -
OCR Scan
2CS-42724 RRF530 S33R TC. 12A MOSFET Drivers IRFS32R
Abstract: Rugged Power MOSFETs_ IRFP140R, IRFP141R, IRFP142R, IRFP143R File Number 2086 Avalanche Energy Rated N-Channel Power MOSFETs 27A and 24A, 60V-100V fDs(on) = 0.0850 and 0.110 Features: â  Single pulse avalanche energy rated â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance N-CHANNEL ENHANCEMENT MODE D «2cs-42cm TERMINAL DIAGRAM TERMINAL DESIGNATION The IRFP140R, IRFP141R, IRFP142R and IRFPI43R are advanced power -
OCR Scan
CI 6264 9l 15a f 6267 IRFP142 92CS-426 92CS-42M0
Abstract: GA200 GA201 GB200 GB201 GA200A GA201A GB200A GB201A Repetitive Peak Off-State Voltage, class="hl">60V.100V -
OCR Scan
GR201A GA/GB200
Abstract: . Ol TFJ3Ã75DÃ1 ODlflShl T 3875081 G E SOLID STATE 01E 18269 D T"" 39 ~ / i Standard Power MOSFETs _ IRF130, IRF131, IRF132, IRF133 File Number 1566 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 12Aand 14A, 60V-100V rDS(on) = 0.18 f! and 0.25 fi Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance â  Majority carrier device N-CHANNEL ENHANCEMENT MODE -
OCR Scan
92CS-37801 IRFI30 1RF130 IRf 48 MOSFET 1RF131 IRF N-Channel Power MOSFETs 03gm T0-204AA 0UHAT10N
Abstract: Standard Power MOSFETs IRFF120, IRFF121, IRFF122, IRFF123 Power MOS Field-Effect Transistors File Number 1563 N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 5.OA and 6.0A, 60V-100V rDs(on) = 0.30 fi and 0.40 fi Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance â  Majority carrier device The IRFF120, IRFF121, IRFF122 and IRFF123 are n-channel enhancement-mode -
OCR Scan
OA 161 diode 3ws7 92CS-37553
Abstract: -Standard Power MOSFETs File Number 1566 IRF130, IRF131, IRF132, IRF133 Power MOS Field-Effect Transistors N-Cfiannel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V rDS(on) = 0.18 fi and 0.25 fi N-CHANNEL ENHANCEMENT MODE Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance â  Majority carrier device 92CS-33741 TERMINAL DIAGRAM The IRF130, IRF131, IRF132 and IRF133 are n-channel -
OCR Scan
MOSFET 150 N IRF IRf 80 12 MOSFET irf 80 n irf power mosfet IRF 80A 92CS-37BOI
Abstract: Standard Power MOSFETs- IRF510, IRF511, IRF512, IRF513 Power MOS Field-Effect Transistors File Number 1573 N-Channel Enhancement-Mode Power Fieid-Effect Transistors 3.5A and 4.0A, 60V-100V fDs(on) = 0.6 Q and 0.8 Q Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance â  Majority carrier device The IRF510, IRF511, IRF512 and IFIF513 are n-channel enhancement-mode silicon-gate power field-effect -
OCR Scan
RF510 IRF510 MOSFET Irf510 mosfet circuit diagram MOSFET IRF510 IRF511 MOSFET RELAY HGS 92CS-39326
Abstract: Rugged Power MOSFETs File Number 2024 IRFF130R, IRFF131R, IRFF132R, IRFF133R Avalanche Energy Rated N-Channel Power MOSFETs 7.OA and 8.0A, 60V-100V rDs(on) = 0.180 and 0.25Q Features: â  Single pulse avalanche energy rated â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM The IRFF130R, IRFF131R, IRFF132R and IIRFF133R are advanced power MOSFETs designed -
OCR Scan
92CS-
Abstract: -Standard Power MOSFETs File Number 1574 IRF520, IRF521, IRF522, IRF523 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 7.0A and 8.0A, 60V-100V ros(on) = 0.30 O and 0.40 fi Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance â  Majority carrier device N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM The IRF520, IRF521, IRF522 and IRF523 are n-channel -
OCR Scan
1RF520 IRFS20 1rf520 transistor RF521 transistor IRF520 IRFS22 92CS-39529
Abstract: Standard Power MOSFETs- IRF530, IRF531, IRF532, IRF533 Power MOS Field-Effect Transistors File Number 1575 N-Channel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V rDs(on) = 0.18 f! and 0.25 O N-CHANNEL ENHANCEMENT MODE Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance â  Majority carrier device TERMINAL DIAGRAM The IRF530, IRF531, IRF532 and IRF533 are n-channel enhancement-mode -
OCR Scan
IRF530 mosfet J56-1 L10M 92CS-39928 50V0SS
Abstract: â¡1 3875081 G E SOLID STATE DE| 3Ã7SDÃ1 001fl5S4 7 f 0 1E 18254 D7 _ Standard Power MOSFETs File Number 1563 IRFF120, IRFF121, IRFF122, IRFF123 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 5.0A and 6.0A, 60V-100V rDs(on) = 0.30 CI and 0.40 CI Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance â  Majority carrier device N-CHANNEL ENHANCEMENT MODE -
OCR Scan
92CS-37SS5
Abstract: Standard Power MOSFETs, 2N6763, 2N6764 File Number 1590 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 31A and 38A, 60V-100V rDs(on) = 0.08 O and 0.055 Q Feature«: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics m High input impedance â  Majority carrier device The 2N6763 and 2N6764 are n-channel enhancement-mode silicon-gate power MOS field-effect transistors designed for applications such as switching regulators, switching -
OCR Scan
2N5764 25C31 2N6164
Abstract: Rugged Power MOSFETs. IRF130R, IRF131R, IRF132R, IRF133R File Number 1986 Avalanche Energy Rated N-Channel Power MOSFETs 12A and 14A, 60V-100V ros(on) = 0.180 and 0.250 N-CHANNEL ENHANCEMENT MODE Features: â  Single pulse avalanche energy rated â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance The IRF130R, IRF131R, IRF132R and IRF133R are advanced power MOSFETs designed, tested, and guaranteed to withstand a -
OCR Scan
2501A 204AA
Abstract: . 100V. 150V. 200V -
OCR Scan
2N1870A-2N1874A MIL-S-19500/198 MIL-STD-701 2N1870A JAN2N1S70A
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