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ISL83204AIBZ Intersil Corporation 60V/2.5A Peak, High Frequency Full Bridge FET Driver; PDIP20, SOIC20; Temp Range: -40° to 85°C visit Intersil Buy
ISL83204AIBZT Intersil Corporation 60V/2.5A Peak, High Frequency Full Bridge FET Driver; PDIP20, SOIC20; Temp Range: -40° to 85°C visit Intersil Buy
ISL83204AIPZ Intersil Corporation 60V/2.5A Peak, High Frequency Full Bridge FET Driver; PDIP20, SOIC20; Temp Range: -40° to 85°C visit Intersil Buy
HIP2103FRTAAZ Intersil Corporation 60V, 1A/2A Peak, Half Bridge Driver with 4V UVLO; DFN8; Temp Range: -40° to 125°C visit Intersil Buy
HIP2103FRTAAZ-T Intersil Corporation 60V, 1A/2A Peak, Half Bridge Driver with 4V UVLO; DFN8; Temp Range: -40° to 125°C visit Intersil Buy
HIP2103FRTAAZ-T7A Intersil Corporation 60V, 1A/2A Peak, Half Bridge Driver with 4V UVLO; DFN8; Temp Range: -40° to 125°C visit Intersil Buy

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60V-100V

Catalog Datasheet MFG & Type PDF Document Tags

I22R

Abstract: IRFF122R  Rugged Power MOSFETs IRFF120R, IRFF121R, IRFF I22R, IRFF123R File Number 2023 Avalanche Energy Rated N-Channel Power MOSFETs 5.0A and 6.0A, 60V-100V ibs(on) = 0.30n and 0.400 Features: â  Single pulse avalanche energy rated â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM The IRFF120R, IRFF121R, IRFF122R and IRFF123R are advanced power MOSFETs designed, tested
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OCR Scan
I22R IRFFI22R 92CS-42S60

OA 207 B diode

Abstract: IRFI20 3875081 G E SOLID STATEIIÏ DET| 3A7S0Ã1 DDlflHbM â¡ | o T-// _!-1-;-1- Standard Power MOSFETs File Number 1565 IRF120, IRF121, IRF122, IRF123 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 7.0A and 8.0A, 60V-100V ros(on) = 0.30 fi and 0.40 fi Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics m High input impedance â  Majority carrier device N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM
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OCR Scan
OA 207 B diode IRFI20 IRFt20 dioda 30 Ampere 367SQ61

IRFF130

Abstract: IRFF131 -Standard Power MOSFETs File Number 1564 IRFF130, IRFF131, IRFF132, IRFF133 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 7.OA and 8.0A, 60V-100V rDs(on) = 0.18 Q and 0.25 fi Features: â  SOA is power-dissipation limited m Nanosecond switching speeds m Linear transfer characteristics â  High input impedance â  Majority carrier device 92CS-33741 TERMINAL DIAGRAM The IRFF130, IRFF131, IRFF132 and IRFF133 are
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OCR Scan
C 3259 T0-205AF 92CS-37555 RFF13

IRF520R

Abstract: IRF521R Rugged Power MOSFETs_ IRF520R, IRF521R, IRF522R, IRF523R Avalanche Energy Rated N-Channel Power MOSFETs 7.0A and 8.0A, 60V-100V ros(on) = 0.30C2 and 0.40CJ Features: â  Single pulse avalanche energy rated â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance File Number 1994 N-CHANNEL ENHANCEMENT MODE 0 TERMINAL DIAGRAM TERMINAL DESIGNATION The IRF520R, IRF521R, IRF522R and IRF523R are advanced power
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OCR Scan
IRF523 30C2 40CJ T0-220AB 92CS-39528 IRF52GIR IRFS22R I2CS-42M0 UC1-41

IRF123

Abstract: IRF120 Standard Power MOSFETs- IRF120, IRF121, IRF122, IRF123 Power MOS Field-Effect Transistors File Number 1565 N-Channel Enhancement-Mode Power Field-Effect Transistors 7.0A and 8.0A, 60V-100V ros(on) = 0.30 O and 0.40 fi Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance m Majority carrier device N-CHANNE1. ENHANCEMENT MODE GO-! TERMINAL DIAGRAM The IRF120, IRF121, IRF122 and IRF123 are n-channel
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OCR Scan
IRF1 CQ 1565 RT RF123 IRF1Z0 TQ-204AA 75BVOSS

AD107

Abstract: LTRW . 300V. 400V Repetitive Peak Reverse Voltage, VBRM.
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OCR Scan
AD107-AD111 AD100 AD107 AD114 AD102 AD103 LTRW 300v vdr AD101 AD103 M AD100-AD104

2CS-42724

Abstract: S33R Rugged Power MOSFETs IRF530R, IRF531R, IRF532R, IRF533R N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM File Number 1993 Avalanche Energy Rated N-Channel Power MOSFETs 12A and 14A, 60V-100V rDs(on) = 0.180 and 0.25fi Features: â  Single pulse avalanche energy rated â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance TERMINAL DESIGNATION The IRF530R, IRF531R, IRF532R and IRF533R are advanced power MOSFETs designed, tested
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OCR Scan
2CS-42724 S33R RRF530 TC. 12A MOSFET Drivers IRFS32R

IRFP140R

Abstract: IRFP142R Rugged Power MOSFETs_ IRFP140R, IRFP141R, IRFP142R, IRFP143R File Number 2086 Avalanche Energy Rated N-Channel Power MOSFETs 27A and 24A, 60V-100V fDs(on) = 0.0850 and 0.110 Features: â  Single pulse avalanche energy rated â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance N-CHANNEL ENHANCEMENT MODE D «2cs-42cm TERMINAL DIAGRAM TERMINAL DESIGNATION The IRFP140R, IRFP141R, IRFP142R and IRFPI43R are advanced power
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OCR Scan
CI 6264 IRFP142 9l 15a f 6267 92CS-426 92CS-42M0

GA201

Abstract: GA201A GA200 GA201 GB200 GB201 GA200A GA201A GB200A GB201A Repetitive Peak Off-State Voltage, class="hl">60V.100V
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OCR Scan
GR201A GA/GB200

1RF130

Abstract: IRFI30 . Ol TFJ3Ã75DÃ1 ODlflShl T 3875081 G E SOLID STATE 01E 18269 D T"" 39 ~ / i Standard Power MOSFETs _ IRF130, IRF131, IRF132, IRF133 File Number 1566 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 12Aand 14A, 60V-100V rDS(on) = 0.18 f! and 0.25 fi Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance â  Majority carrier device N-CHANNEL ENHANCEMENT MODE
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OCR Scan
92CS-37801 IRFI30 1RF130 IRf 48 MOSFET 1RF131 03gm IRF N-Channel Power MOSFETs T0-204AA 0UHAT10N

OA 161 diode

Abstract: IRFF120 Standard Power MOSFETs IRFF120, IRFF121, IRFF122, IRFF123 Power MOS Field-Effect Transistors File Number 1563 N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 5.OA and 6.0A, 60V-100V rDs(on) = 0.30 fi and 0.40 fi Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance â  Majority carrier device The IRFF120, IRFF121, IRFF122 and IRFF123 are n-channel enhancement-mode
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OCR Scan
OA 161 diode 3ws7 92CS-37553

IRf 48 MOSFET

Abstract: MOSFET 150 N IRF -Standard Power MOSFETs File Number 1566 IRF130, IRF131, IRF132, IRF133 Power MOS Field-Effect Transistors N-Cfiannel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V rDS(on) = 0.18 fi and 0.25 fi N-CHANNEL ENHANCEMENT MODE Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance â  Majority carrier device 92CS-33741 TERMINAL DIAGRAM The IRF130, IRF131, IRF132 and IRF133 are n-channel
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OCR Scan
MOSFET 150 N IRF IRf 80 12 MOSFET irf 80 n IRF 80A irf power mosfet 92CS-37BOI

IRF510

Abstract: IRF510 MOSFET Standard Power MOSFETs- IRF510, IRF511, IRF512, IRF513 Power MOS Field-Effect Transistors File Number 1573 N-Channel Enhancement-Mode Power Fieid-Effect Transistors 3.5A and 4.0A, 60V-100V fDs(on) = 0.6 Q and 0.8 Q Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance â  Majority carrier device The IRF510, IRF511, IRF512 and IFIF513 are n-channel enhancement-mode silicon-gate power field-effect
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OCR Scan
RF510 IRF510 MOSFET Irf510 mosfet circuit diagram MOSFET IRF510 IRF511 MOSFET RELAY HGS 92CS-39326

IRFF130R

Abstract: IRFF131R Rugged Power MOSFETs File Number 2024 IRFF130R, IRFF131R, IRFF132R, IRFF133R Avalanche Energy Rated N-Channel Power MOSFETs 7.OA and 8.0A, 60V-100V rDs(on) = 0.180 and 0.25Q Features: â  Single pulse avalanche energy rated â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM The IRFF130R, IRFF131R, IRFF132R and IIRFF133R are advanced power MOSFETs designed
-
OCR Scan
92CS-

1RF520

Abstract: IRFS20 -Standard Power MOSFETs File Number 1574 IRF520, IRF521, IRF522, IRF523 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 7.0A and 8.0A, 60V-100V ros(on) = 0.30 O and 0.40 fi Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance â  Majority carrier device N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM The IRF520, IRF521, IRF522 and IRF523 are n-channel
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OCR Scan
1RF520 IRFS20 1rf520 transistor RF521 transistor IRF520 IRFS22 92CS-39529

IRF530

Abstract: IRF532 Standard Power MOSFETs- IRF530, IRF531, IRF532, IRF533 Power MOS Field-Effect Transistors File Number 1575 N-Channel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V rDs(on) = 0.18 f! and 0.25 O N-CHANNEL ENHANCEMENT MODE Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance â  Majority carrier device TERMINAL DIAGRAM The IRF530, IRF531, IRF532 and IRF533 are n-channel enhancement-mode
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OCR Scan
IRF530 mosfet L10M J56-1 92CS-39928 50V0SS

IRFF120

Abstract: IRFF122 â¡1 3875081 G E SOLID STATE DE| 3Ã7SDÃ1 001fl5S4 7 f 0 1E 18254 D7 _ Standard Power MOSFETs File Number 1563 IRFF120, IRFF121, IRFF122, IRFF123 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 5.0A and 6.0A, 60V-100V rDs(on) = 0.30 CI and 0.40 CI Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance â  Majority carrier device N-CHANNEL ENHANCEMENT MODE
-
OCR Scan
92CS-37SS5

2N5764

Abstract: 2N6764 Standard Power MOSFETs, 2N6763, 2N6764 File Number 1590 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 31A and 38A, 60V-100V rDs(on) = 0.08 O and 0.055 Q Feature«: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics m High input impedance â  Majority carrier device The 2N6763 and 2N6764 are n-channel enhancement-mode silicon-gate power MOS field-effect transistors designed for applications such as switching regulators, switching
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OCR Scan
2N5764 25C31 2N6164

IRF130R

Abstract: IRF131R Rugged Power MOSFETs. IRF130R, IRF131R, IRF132R, IRF133R File Number 1986 Avalanche Energy Rated N-Channel Power MOSFETs 12A and 14A, 60V-100V ros(on) = 0.180 and 0.250 N-CHANNEL ENHANCEMENT MODE Features: â  Single pulse avalanche energy rated â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance The IRF130R, IRF131R, IRF132R and IRF133R are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
2501A 204AA

1RFF111

Abstract: a08g G E SOLID STATE Gl 3875081 G E SOLID STATE Standard Power MOSFETs_ DÃTJ 3Ã"7SD01 DGlfiSHT 3 0 1E 18249 ^ D 7e 5 j- o~} 1RFF110, IRFF111, IRFF112, IRFF113 Power MOS Field-Effect Transistors File Number 1562 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.OA and 3.5A, 60V-100V ros(on) = 0.6 fi and 0.8 fi N-CHANNEL ENHANCEMENT MODE Features: â  SOA is power-dissipation limited â  Nanosecond switching speeds â  Linear transfer characteristics â  High input impedance â
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OCR Scan
IRFF110 1RFF111 a08g 92CS-37
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