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BLF8G24LS-100VJ NXP Semiconductors BLF8G24LS-100V - Power LDMOS transistor ri Buy
BLF8G24LS-100VU NXP Semiconductors BLF8G24LS-100V - Power LDMOS transistor ri Buy
BLF8G27LS-100V,118 NXP Semiconductors BLF8G27LS-100V - Power LDMOS transistor ri Buy

60V-100V

Catalog Datasheet Results Type PDF Document Tags
Abstract: , class="highlight">60V.100V Repetitive Peak On-State Current, l1RM. up to ... OCR Scan
datasheet

3 pages,
133.39 Kb

GR201A GB201A GB201 GB200A GB200 GA201A GA200A GA200 GA201 GA200 abstract
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Abstract: , VBRM.. 200V. 300V. 400V . ... OCR Scan
datasheet

3 pages,
120.84 Kb

300v vdr AD10-2 AD100 ad100-104 AD101 AD102 AD103 AD103 M AD110 AD111 AD114 AD107 LTRW AD100-AD104 AD107-AD111 AD100-AD104 abstract
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Abstract: Standard Power MOSFETs, 2N6763 2N6763, 2N6764 2N6764 File Number 1590 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 31A and 38A, 60V-100V rDs(on) = 0.08 O and 0.055 Q Feature«: - SOA is power-dissipation limited - Nanosecond switching speeds - Linear transfer characteristics m High input impedance - Majority carrier device The 2N6763 2N6763 and 2N6764 2N6764 are n-channel enhancement-mode silicon-gate power MOS field-effect transistors designed for applications such as switching regulators, switching ... OCR Scan
datasheet

4 pages,
134 Kb

2N6763 2N6164 25C31 2N6764 2N5764 2N6763 abstract
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Abstract: Standard Power MOSFETs_ 2N6755 2N6755, 2N6756 2N6756 Power MOS Field-Effect Transistors File Number 1586 N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 60V-100V rDs(on) = 0.18 fi and 0.25 fl Features: - SOA is power-dissipation limited - Nanosecond switching speeds - Linear transfer characteristics m High input impedance - Majority carrier device TERMINAL DIAGRAM The 2N6755 2N6755 and 2N6756 2N6756 are n-channel enhancement-mode silicon-gate power field-effect transistors ... OCR Scan
datasheet

4 pages,
123.33 Kb

2N6755 md-141 D-05N 2N6156 -60V100V 2N6756 2N6155 2N6755 abstract
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Abstract: Rugged Power MOSFETs IRF530R IRF530R, IRF531R IRF531R, IRF532R IRF532R, IRF533R IRF533R N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM File Number 1993 Avalanche Energy Rated N-Channel Power MOSFETs 12A and 14A, 60V-100V rDs(on) = 0.180 and 0.25fi Features: - Single pulse avalanche energy rated - SOA is power-dissipation limited - Nanosecond switching speeds - Linear transfer characteristics - High input impedance TERMINAL DESIGNATION The IRF530R IRF530R, IRF531R IRF531R, IRF532R IRF532R and IRF533R IRF533R are advanced power MOSFETs designed, tested, and ... OCR Scan
datasheet

5 pages,
187.47 Kb

TC. 12A MOSFET Drivers IRF533R IRF532R IRF531R IRF530R RRF530 2CS-42724 IRF530R abstract
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Abstract: Rugged Power MOSFETs_ IRFD120R IRFD120R, IRFD121R IRFD121R, IRFD122R IRFD122R, IRFD123R IRFD123R File Number 2036 Avalanche Energy Rated N-Channel Power MOSFETs 1.3A and 1.1A, 60V-100V ros(on) = 0.30CÌ and 0.400 Features: - Single pulse avalanche energy rated - SOA is power-dissipation limited - Nanosecond switching speeds - Linear transfer characteristics - High input impedance N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM TERMINAL DESIGNATION The IRFD120R IRFD120R, IRFD121R IRFD121R, IRFD122R IRFD122R and IRFD123R IRFD123R are advanced power MOSFETs designed ... OCR Scan
datasheet

5 pages,
169.62 Kb

IRFD123R IRFD122R IRFD121R IRFD120R 2501a irfd123 IRFD120R abstract
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Abstract: Standard Power MOSFETs- IRF510 IRF510, IRF511 IRF511, IRF512 IRF512, IRF513 IRF513 Power MOS Field-Effect Transistors File Number 1573 N-Channel Enhancement-Mode Power Fieid-Effect Transistors 3.5A and 4.0A, 60V-100V fDs(on) = 0.6 Q and 0.8 Q Features: - SOA is power-dissipation limited - Nanosecond switching speeds - Linear transfer characteristics - High input impedance - Majority carrier device The IRF510 IRF510, IRF511 IRF511, IRF512 IRF512 and IFIF513 IFIF513 are n-channel enhancement-mode silicon-gate power field-effect transistors designed for ... OCR Scan
datasheet

5 pages,
178.32 Kb

jrf51 IFIF513 RELAY HGS jrf512 IRF513 RF510 IRF512 IRF511 IRF511 MOSFET MOSFET IRF510 IRF510 Irf510 mosfet circuit diagram IRF510 MOSFET IRF510 abstract
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Abstract: -Standard Power MOSFETs File Number 1566 IRF130 IRF130, IRF131 IRF131, IRF132 IRF132, IRF133 IRF133 Power MOS Field-Effect Transistors N-Cfiannel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V rDS(on) = 0.18 fi and 0.25 fi N-CHANNEL ENHANCEMENT MODE Features: - SOA is power-dissipation limited - Nanosecond switching speeds - Linear transfer characteristics - High input impedance - Majority carrier device 92CS-33741 92CS-33741 TERMINAL DIAGRAM The IRF130 IRF130, IRF131 IRF131, IRF132 IRF132 and IRF133 IRF133 are n-channel ... OCR Scan
datasheet

5 pages,
167.13 Kb

sirf iv mosfet irf 150 IRF 80A MOSFET 130 N IRF LD80A IRF133 IRF132 IRF mosfet irf power mosfet IRF130 IRF131 irf 80 n 1RF130 IRf 80 12 MOSFET IRF130 abstract
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Abstract: Rugged Power MOSFETs_ IRF520R IRF520R, IRF521R IRF521R, IRF522R IRF522R, IRF523R IRF523R Avalanche Energy Rated N-Channel Power MOSFETs 7.0A and 8.0A, 60V-100V ros(on) = 0.30C2 and 0.40CJ Features: - Single pulse avalanche energy rated - SOA is power-dissipation limited - Nanosecond switching speeds - Linear transfer characteristics - High input impedance File Number 1994 N-CHANNEL ENHANCEMENT MODE 0 TERMINAL DIAGRAM TERMINAL DESIGNATION The IRF520R IRF520R, IRF521R IRF521R, IRF522R IRF522R and IRF523R IRF523R are advanced power MOSFETs designed, tested ... OCR Scan
datasheet

5 pages,
192.57 Kb

IRF523R IRF522R IRF521R 40CJ 30C2 IRF523 IRF520R IRF520R abstract
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Abstract: Standard Power MOSFETs- IRF120 IRF120, IRF121 IRF121, IRF122 IRF122, IRF123 IRF123 Power MOS Field-Effect Transistors File Number 1565 N-Channel Enhancement-Mode Power Field-Effect Transistors 7.0A and 8.0A, 60V-100V ros(on) = 0.30 O and 0.40 fi Features: - SOA is power-dissipation limited - Nanosecond switching speeds - Linear transfer characteristics - High input impedance m Majority carrier device N-CHANNE1. ENHANCEMENT MODE GO-! TERMINAL DIAGRAM The IRF120 IRF120, IRF121 IRF121, IRF122 IRF122 and IRF123 IRF123 are n-channel enhancement-mode ... OCR Scan
datasheet

5 pages,
167.4 Kb

RF123 IRF1Z0 IRF122 irf121 CQ 1565 RT IRF120 IRF123 IRF121 IRF120 abstract
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Abstract: MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc IM PIM EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION (FORMERLY 91) Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available) Also available on: MOLY PEDESTAL Size: .140" Diameter (3.56mm) Thickness: .010" (0.25mm) BeO PEDESTAL Size: .142" x .178" (3.61mm x 4.52mm) Thickness: .023" (0.58mm) It is advisable that: a) the chip be eutectically mounted with ... OCR Scan
datasheet

2 pages,
84.76 Kb

datasheet abstract
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Abstract: SOLITRON DEVICES INC at FË^fl3t.at.05 oooasTa 3 I " - 7" - 7 j - o r ELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, HIGH CURRENT NPN EPITAXIAL PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 Â Aluminum Collector: Polished Silicon (Gold and Chrome Silver also available) Also available on: MOLV PEDESTAL Size:.3 8 9 "X .389" (9.88mmX9.88mm) Thickness: ,020"(0.5im m ) BeO PEDESTAL Size: .430" X . 500" (10.92mm X 12.70mm) Thickness: ,060"(i.52m m ) A S S E M B ... OCR Scan
datasheet

1 pages,
81.27 Kb

BUX22 equivalent datasheet abstract
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Abstract: 8368602 SOLITRON-DEVICES INC 95D 02841 T5 DE |�flbQB DQ0E� 3 Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POW ER TRANSISTOR (FORMERLY 16) CONTACT METALLIZATION B ase and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available) Also available on: MOLY PEDESTAL Size: .220" Diameter (5.59mm) Thickness: .010" (0.25mm) BeO PEDESTAL Size: .175" x .250" (4.45mm x 6.35mm) Thickne ... OCR Scan
datasheet

2 pages,
181.03 Kb

solitrondevices datasheet abstract
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Abstract: SOLITRON DEVICES INC at dbJ û3&.ûLiGS oooasbE or ELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED 116 (FORMERLY 16) PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 3 0 .0 0 0 A Aluminum Collector: Etched Silicon (Gold and Chrome Silver also available) Also available on: MOLY PEDESTAL Size: Thickness: BeO PEDESTAL Size: Thickness: , 1 7 5 " x .2 5 0 " (4.45mm X 6.35mm) ,032"(0.8m m ) .2 2 0 " Diameter (5.59mm) ,o io ... OCR Scan
datasheet

1 pages,
78.21 Kb

datasheet abstract
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Abstract: 8 3 6 8 6 0 2 SOL IT R ON D E V I C E S INC 95D 02871 TS D E | s 3 t . ö b O E 0 0 D E S 71 1 1 3 | 7~- Z 3 -/S - [^ © © Q D © ? © Ä 1F Ä 1 L © © _ -JfèlitrQ n Devices, Inc. M EDIUM TO HIGH VO LTA G E, HIGH CURRENT CHIP N U M BER d ii N P N EPITAXIAL PLANAR POWER TRANSISTOR (FORMERLY 96) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available) Also available o ... OCR Scan
datasheet

2 pages,
195.91 Kb

datasheet abstract
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Abstract: 2SD943 2SD90 2SD90, 2SD91 2SD91, 2SD92 2SD92, 2SD93 2SD93, 2SD94 2SD94 l->>-'tì®25,C) fê^-ffiïUlS Ti 150°C Tstg - 65-hl50°C - HmSU^tt (Ta = 25°C) m s IS ^ JA SI sfe ft- 2SD90 2SD90 2SD91 2SD91 2SD92 2SD92 2SD93 2SD93 2SD94 2SD94 W^i'^i'UItil le BO 200^A 50M 30^/A VcB - 20V 40V 50V ; y ? L f Ieb ... OCR Scan
datasheet

1 pages,
39.76 Kb

2SD94 2SD93 2Sd92 2SD90 2SD91 2SD92 2SD90 abstract
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Abstract: Direct reading ammeters and voltmeters AC moving iron JE DIN standard instruments in 48, 72 and 96mm square cases. Conforming to BS89, IEC 51, VDE 0410 and DIN 43700, 43701, 43802 s Removable scale (72 and 96mm s) s Secure panel fixing s Rising clamp terminals with optional cover s 90° movement Options and ordering codes J Meter with scale 72 S1 15A Rated value ­ see table below J Moving iron ­ AC E E S1 48mm square 48 72mm sq ... Original
datasheet

1 pages,
20.55 Kb

15Va ammeter voltmeters MOVING IRON METER MOVING IRON PANEL METER bs89 calibration IEC51 ammeters with burden 43802 ammeters bs89 datasheet abstract
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Abstract: m SCR IN METAL PACKAGE TO-39 1,& A RMS T A r>MC J l-\ IMMO 1, A DMC -T n ini'IJ v DRM V RRM BLOCKING VOLTAGE 15V 25V 2N2322 2N2322 2N2322A 2N2322A 50V BTX30- BTX30- 50 2N2323 2N2323 2N2323A 2N2323A 60V 100V BTX30-100 BTX30-100 2N2324 2N2324 2N2324A 2N2324A TAG611-100 TAG611-100 TAG612-100 TAG612-100 TAG613-100 TAG613-100 TAG614-100 TAG614-100 TAG615-100 TAG615-100 TAG605-100 TAG605-100 TAG606-100 TAG606-100 150V 2N2325 2N2325 2N2325A 2N2325A 200V BTX30-200 BTX30-200 2N2326 2N2326 2N2326A 2N2326A TAG611-200 TAG611-200 TAG612-200 TAG612-200 TAG613-200 TAG613-200 TAG614-200 TAG614-200 TAG615-200 TAG615-200 TAG605-200 TAG605-200 TAG606-200 TAG606-200 250V 2N2327 2N2327 ... OCR Scan
datasheet

1 pages,
33.36 Kb

2N2325 2N2329A 2N2322 TAG606-400 TAG613-100 TAG611-100 TAG612-600 TAG612-100 Immo TAG606-800 TAG606-600 TAG612-400 BTX30-400 2N2324A BTX30-100 2N2324 BTX30-100 abstract
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Abstract: ÌMÌ LjgU SCR IN PLASTIC PACKAGE to-220ab 5a rms 8 a rms 1 qa rms i2a rms v drm v rrm blocking voltage 15v 30v 50v 60v 100v tag620-100 tag621-100 tag625-100 tag626-100 tag627-100 tag660-100 tag661-100 tag665-100 tag666-100 150v 200v tag620-200 tag621-200 tag625-200 tag626-200 tag627-200 tag660-200 tag661-200 tag665-200 tag666-200 250v 300v i+o ov tag620-400 tag6 ... OCR Scan
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1 pages,
34.26 Kb

TAG625-400 TAG621-600 TAG621-400 tag626/600 TAG627-600 TAG627 tag665-600 TAG626 TAG661-100 TAG627-500 TAG621-800 TAG665-800 TAG661-400 TAG620-400 TAG620-100 TAG621-100 TAG620-100 abstract
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Abstract: SB60-600 SB60-600 SB60-100 SB60-100 SEME LAB MECHANICAL DATA Dimensions in mm 6.86 (0.270) 6.09 (0.240) 4.19 (0.165) 3.94 (0.155) Dia. 21.21 (0.835) 20.70 (0.815) 13.84 (0.545) 13.58 (0.535) 1 2 3 1.14 (0.707) 0.88 (0.035) DUAL SCHOTTKY BARRIER RECTIFIER IN A TO-258 HERMETICALLY SEALED PACKAGE FOR HI­REL APPLICATIONS 19.05 (0.750) 12.70 (0.500) 17.96 (0.707) 17.70 (0.697) 17.65 (0.695) 17.39 (0.685) 5.08 (0.200) BSC 3.56 (0.140) BSC 1.65 (0.065) 1.39 ... Original
datasheet

1 pages,
9.36 Kb

SB60-600 SB60-100 SB60 100V 60A Diode datasheet abstract
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