NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: . Ol TFJ3-75D-1 ODlflShl T 3875081 G E SOLID STATE 01E 18269 D T"" 39 ~ / i Standard Power MOSFETs _ IRF130 IRF130, IRF131 IRF131, IRF132 IRF132, IRF133 IRF133 File Number 1566 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 12Aand 14A, 60V-100V rDS(on) = 0.18 f! and 0.25 fi Features: - SOA is power-dissipation limited - Nanosecond switching speeds - Linear transfer characteristics - High input impedance - Majority carrier device N-CHANNEL ENHANCEMENT MODE o TERMINAL ... | OCR Scan |
5 pages, |
T39 diode 92CS-37801 IRF130 IRF131 IRF132 IRF133 IRFI30 "Power MOSFETs" IRF 130 -60V100V IRF N-Channel Power MOSFETs 1RF130 IRF130 abstract |
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| Abstract: 3875081 G E SOLID STATE Ol DE 1 File Number 1586 Power MOS Field-Effect Transistors 3fi750fll 0010304 1 - D t-39- _ Standard Power MOSFETs 2N6755 2N6755, 2N6756 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V rDS(on) = 0.18 fi and 0.25 n N-CHANNEL ENHANCEMENT MODE Features: - SOA is power-dissipation limited - Nanosecond switching speeds - Linear transfer characteristics - High input impedance - Majority carrier device The 2N6755 2N6755 and 2N6756 2N6756 are n-channel ... | OCR Scan |
4 pages, |
dioda 2N6756 2N6755 2n6156 2N6155 2N6755 abstract |
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| Abstract: G E SOLID STATE Gl 3875081 G E SOLID STATE Standard Power MOSFETs_ DÊTJ 307SD 307SD-1 DülfiSHT 3 0 1E 18249 ^ D 7e 5 j- o~} 1RFF110 1RFF110, IRFF111 IRFF111, IRFF112 IRFF112, IRFF113 IRFF113 Power MOS Field-Effect Transistors File Number 1562 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.OA and 3.5A, 60V-100V ros(on) = 0.6 fi and 0.8 fi N-CHANNEL ENHANCEMENT MODE Features: - SOA is power-dissipatlon limited - Nanosecond switching speeds - Linear transfer characteristics - High input impedance - Majority carrier device The ... | OCR Scan |
5 pages, |
IRFF110 a06 mosfet 1RFF110 307SD IRFF111 IRFF112 IRFF113 307SD abstract |
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| Abstract: , > Repetitive Peak On-State Current, l1RM. up to ... | OCR Scan |
3 pages, |
GR201A GB201A GB201 GB200A GB200 GA201A GA200A GA200 GA201 GA200 abstract |
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| Abstract: Standard Power MOSFETs_ 2N6755 2N6755, 2N6756 2N6756 Power MOS Field-Effect Transistors File Number 1586 N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 60V-100V rDs(on) = 0.18 fi and 0.25 fl Features: - SOA is power-dissipation limited - Nanosecond switching speeds - Linear transfer characteristics m High input impedance - Majority carrier device TERMINAL DIAGRAM The 2N6755 2N6755 and 2N6756 2N6756 are n-channel enhancement-mode silicon-gate power field-effect transistors ... | OCR Scan |
4 pages, |
md-141 D-05N 2N6755 2N6156 2N6756 -60V100V 2N6155 2N6755 abstract |
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| Abstract: Rugged Power MOSFETs IRF530R IRF530R, IRF531R IRF531R, IRF532R IRF532R, IRF533R IRF533R N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM File Number 1993 Avalanche Energy Rated N-Channel Power MOSFETs 12A and 14A, 60V-100V rDs(on) = 0.180 and 0.25fi Features: - Single pulse avalanche energy rated - SOA is power-dissipation limited - Nanosecond switching speeds - Linear transfer characteristics - High input impedance TERMINAL DESIGNATION The IRF530R IRF530R, IRF531R IRF531R, IRF532R IRF532R and IRF533R IRF533R are advanced power MOSFETs designed, tested, and ... | OCR Scan |
5 pages, |
IRF533R IRF532R IRF531R IRF530R RRF530 IRF530R abstract |
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| Abstract: Rugged Power MOSFETs IRFF120R IRFF120R, IRFF121R IRFF121R, IRFF I22R, IRFF123R IRFF123R File Number 2023 Avalanche Energy Rated N-Channel Power MOSFETs 5.0A and 6.0A, 60V-100V ibs(on) = 0.30n and 0.400 Features: - Single pulse avalanche energy rated - SOA is power-dissipation limited - Nanosecond switching speeds - Linear transfer characteristics - High input impedance N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM The IRFF120R IRFF120R, IRFF121R IRFF121R, IRFF122R IRFF122R and IRFF123R IRFF123R are advanced power MOSFETs designed, tested, and ... | OCR Scan |
5 pages, |
IRFF123R IRFF122R IRFF121R IRFF120R IRFF120R abstract |
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| Abstract: Rugged Power MOSFETs_ IRFD120R IRFD120R, IRFD121R IRFD121R, IRFD122R IRFD122R, IRFD123R IRFD123R File Number 2036 Avalanche Energy Rated N-Channel Power MOSFETs 1.3A and 1.1A, 60V-100V ros(on) = 0.30CÌ and 0.400 Features: - Single pulse avalanche energy rated - SOA is power-dissipation limited - Nanosecond switching speeds - Linear transfer characteristics - High input impedance N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM TERMINAL DESIGNATION The IRFD120R IRFD120R, IRFD121R IRFD121R, IRFD122R IRFD122R and IRFD123R IRFD123R are advanced power MOSFETs designed ... | OCR Scan |
5 pages, |
IRFD123R IRFD122R IRFD121R IRFD120R 2501a irfd123 IRFD120R abstract |
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| Abstract: Rugged Power MOSFETs. IRF130R IRF130R, IRF131R IRF131R, IRF132R IRF132R, IRF133R IRF133R File Number 1986 Avalanche Energy Rated N-Channel Power MOSFETs 12A and 14A, 60V-100V ros(on) = 0.180 and 0.250 N-CHANNEL ENHANCEMENT MODE Features: - Single pulse avalanche energy rated - SOA is power-dissipation limited - Nanosecond switching speeds - Linear transfer characteristics - High input impedance The IRF130R IRF130R, IRF131R IRF131R, IRF132R IRF132R and IRF133R IRF133R are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level ... | OCR Scan |
5 pages, |
IRF133R IRF132R IRF131R IRF130R 2501A IRF130R abstract |
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| Abstract: Standard Power MOSFETs- IRF510 IRF510, IRF511 IRF511, IRF512 IRF512, IRF513 IRF513 Power MOS Field-Effect Transistors File Number 1573 N-Channel Enhancement-Mode Power Fieid-Effect Transistors 3.5A and 4.0A, 60V-100V fDs(on) = 0.6 Q and 0.8 Q Features: - SOA is power-dissipation limited - Nanosecond switching speeds - Linear transfer characteristics - High input impedance - Majority carrier device The IRF510 IRF510, IRF511 IRF511, IRF512 IRF512 and IFIF513 IFIF513 are n-channel enhancement-mode silicon-gate power field-effect transistors designed for ... | OCR Scan |
5 pages, |
IFIF513 IRF512 IRF513 RELAY HGS IRF511 IRF510 RF510 MOSFET IRF510 Irf510 mosfet circuit diagram IRF510 MOSFET IRF510 abstract |
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| Abstract: LUCAS LEDEX/ LUCAS -ID D - Sb07ül3 0G0G1S7 42 3 2 43 LEDEX ÏNCY "LUCAS PRODUCTS 81C 00127 D T^fJ-OJ- NPN SILICON POWER TRANSISTORS DT1311/2 DT1311/2 DT1321/2 DT1321/2 The DT1311 DT1311 /2 and DT1321 DT1321 /22 transistors are NPN Silicon diffused junction homogeneous base devices conforming to BS SO-44A/SB3-3A SO-44A/SB3-3A, IEC C4/B4A and JEDEC TO-5 outlines. They are medium power devices designed to cover a Wide range of applications in industriai and defence projects over a temperature range of -55 °C to + ZOO °C. They are intended to be ... | OCR Scan |
4 pages, |
DT1311/2 DT1321/2 DT1311 DT1321 SO-44A/SB3-3A DT1311/2 abstract |
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| Abstract: 2SD90 2SD90, 2SD91 2SD91, 2SD92 2SD92, 2SD93 2SD93, 2SD94 2SD94 l->>-'tì®25,C) fê^-ffiïUlS Ti 150°C Tstg - 65-hl50°C - HmSU^tt (Ta = 25°C) m s IS ^ JA SI sfe ft- 2SD90 2SD90 2SD91 2SD91 2SD92 2SD92 2SD93 2SD93 2SD94 2SD94 W^i'^i'UItil le BO 200^A 50M 30^/A VcB - 20V 40V 50V ; y ? L f Ieb ... | OCR Scan |
1 pages, |
2SD94 2SD93 2SD90 2SD91 2Sd92 2SD92 2SD90 abstract |
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| Abstract: Direct reading ammeters and voltmeters AC moving iron JE DIN standard instruments in 48, 72 and 96mm square cases. Conforming to BS89, IEC 51, VDE 0410 and DIN 43700, 43701, 43802 s Removable scale (72 and 96mm s) s Secure panel fixing s Rising clamp terminals with optional cover s 90° movement Options and ordering codes J Meter with scale 72 S1 15A Rated value see table below J Moving iron AC E E S1 48mm square 48 72mm sq ... | Original |
1 pages, |
voltmeters MOVING IRON METER ammeters with burden ammeter MOVING IRON PANEL METER IEC51 ammeters 43802 bs89 datasheet abstract |
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| Abstract: SB60-600 SB60-600 SB60-100 SB60-100 SEME LAB MECHANICAL DATA Dimensions in mm 6.86 (0.270) 6.09 (0.240) 4.19 (0.165) 3.94 (0.155) Dia. 21.21 (0.835) 20.70 (0.815) 13.84 (0.545) 13.58 (0.535) 1 2 3 1.14 (0.707) 0.88 (0.035) DUAL SCHOTTKY BARRIER RECTIFIER IN A TO-258 HERMETICALLY SEALED PACKAGE FOR HIREL APPLICATIONS 19.05 (0.750) 12.70 (0.500) 17.96 (0.707) 17.70 (0.697) 17.65 (0.695) 17.39 (0.685) 5.08 (0.200) BSC 3.56 (0.140) BSC 1.65 (0.065) 1.39 ... | Original |
1 pages, |
SB60-600 SB60-100 SB60 100V 60A Diode datasheet abstract |
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| Abstract: ÌMÌ LjgU SCR IN PLASTIC PACKAGE to-220ab 5a rms 8 a rms 1 qa rms i2a rms v drm v rrm blocking voltage 15v 30v 50v 60v 100v tag620-100 tag621-100 tag625-100 tag626-100 tag627-100 tag660-100 tag661-100 tag665-100 tag666-100 150v 200v tag620-200 tag621-200 tag625-200 tag626-200 tag627-200 tag660-200 tag661-200 tag665-200 tag666-200 250v 300v i+o ov tag620-400 tag6 ... | OCR Scan |
1 pages, |
TAG625 TAG621-400 TAG625-500 TAG625_ TAG626 TAG665-800 tag665-600 TAG627-600 TAG665-100 TAG661-400 TAG620-400 TAG627-500 TAG661-100 TAG627 datasheet abstract |
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| Abstract: m SCR IN METAL PACKAGE TO-39 1,& A RMS T A r>MC J l-\ IMMO 1, A DMC -T n ini'IJ v DRM V RRM BLOCKING VOLTAGE 15V 25V 2N2322 2N2322 2N2322A 2N2322A 50V BTX30- BTX30- 50 2N2323 2N2323 2N2323A 2N2323A 60V 100V BTX30-100 BTX30-100 2N2324 2N2324 2N2324A 2N2324A TAG611-100 TAG611-100 TAG612-100 TAG612-100 TAG613-100 TAG613-100 TAG614-100 TAG614-100 TAG615-100 TAG615-100 TAG605-100 TAG605-100 TAG606-100 TAG606-100 150V 2N2325 2N2325 2N2325A 2N2325A 200V BTX30-200 BTX30-200 2N2326 2N2326 2N2326A 2N2326A TAG611-200 TAG611-200 TAG612-200 TAG612-200 TAG613-200 TAG613-200 TAG614-200 TAG614-200 TAG615-200 TAG615-200 TAG605-200 TAG605-200 TAG606-200 TAG606-200 250V 2N2327 2N2327 ... | OCR Scan |
1 pages, |
TAG613-100 2N2322A 2N2323 2N2323A 2N2324 2N2325 2N2329A 2N2322 BTX30-500 TAG612-100 TAG606-400 TAG611-100 btx30-100 Immo BTX30-400 2N2322 abstract |
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| Abstract: LUCAS LEDEX/ LUCAS fllD D - Sb07ül3 0G0G1S7 42 3 2 43 LEDEX ÏNCy'"LUCAS PRODUCTS 81C 00127 D T^fJ-ôJ- NPN SILICON POWER TRANSISTORS DT1311/2 DT1311/2 DT1321/2 DT1321/2 The DT131112 DT131112 and DT1321 DT1321 /22 transistors are NPN silicon diffused junction homogeneous base devices conforming to BS SO-44A/SB3-3A SO-44A/SB3-3A, IEC C4/B4A and JEDEC TO-5 outlines. They are medium power devices designed to cover a wide range of applications in industrial and defence projects over a temperature range of -55 °C to + 200 °C. They are intended ... | OCR Scan |
4 pages, |
SIC 850 inverter relay 12v 100A DT1322 DT1321 DT1312 DT1311 DT1311/2 DT1321/2 DT131112 SO-44A/SB3-3A DT1311/2 abstract |
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| Abstract: SEMELAB LTD 37E » - 0133107 D0DD313 D0DD313 JAN 0 5 1988 2N 6795 2N 6796 MECHANICAL DATA Dimensions in mm MOS POWER N-Channel Enhancement Mode APPLICATIONS • FAST SWITCHING • MOTOR CONTROLS • POWER SUPPLIES PIN1-Source PIN2-Gate PIN 3 Drain and Case TO 39 ABSOLUTE MAXIMUM RATINGS (T^ = 25°C unless otherwise specified) Parameter 2N6795 2N6795 2N6796 2N6796 vD9 Dralnsource voltage 60V 100V Drain gate voltage (Ras = I Mil) 60V 100V lD@Tc = 25°C Continuous drain current ±8A Id@Tc=100 ... | OCR Scan |
2 pages, |
LE17 2N6796 2N6196 2N679B 2N6195 2N6795 D0DD313 D0DD313 abstract |
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| Abstract: SS1020FL SS1020FL~SS10100FL SS10100FL SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE 20 to 100 Volts CURRENT 1.0 Amperes FEATURES · Fast switching speed · Surface mount package ideally suited for autonatic insertion · Low power loss, high efficieucy · In compliance with EU RoHS 2002/95/EC 2002/95/EC directives MECHANICAL DATA · Case: SOD-123FL, Plastic · Terminals: Solderable per MIL-STD-750 MIL-STD-750, Method 2026 · Weight: 17.25mg · Polarity : Color band denotes cathode end ABSOLUTE RATINGS PARAMETER ... | Original |
3 pages, |
SS1020FL 1060F 10100F SS10100FL 2002/95/EC SS1020FL abstract |
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| Abstract: .lAM -n S 1988 T-39-07 T-39-07 JL SEMELAB LTD 37E ]) 0133107 DDDGSTT 0 MECHANICAL DATA Dimensions in mm 2N 6781 2N 6782 MOS POWER N-Channel Enhancement Mode IS MLB APPLICATIONS • FAST SWITCHING • MOTOR CONTROLS • POWER SUPPLIES PIN1-Source PIN2-Gate PIN 3 Drain and Case TO 39 ABSOLUTE MAXIMUM RATINGS (T^ = 25°C unless otherwise specified) Parameter 2N6781 2N6781 2N6782 2N6782 Vos Drain source voltage 60V 100 V V[>GR Drain gate voltage (RGS = I Mil) 60V 100 V Id@Tc = 25°C Continuous drain current ±3-5A lo@Tc=100°C ... | OCR Scan |
2 pages, |
2N6782 2N6781 T-39-07 T-39-07 abstract |
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| MOSKEY(MOSFET/Schottky) Selector Guide Select a property below for a list of related Microsemi part numbers Breakdown Voltage Drain-to-Source 30 V 50 V 60 V 100 V Drain Current (Continuous) 40 A 50 A 70 A Static Drain to Source "on" Resistance 0.01 Ohm 0.022 Ohm 0.04 Ohm Package COOLPACK1 (SM www.datasheetarchive.com/files/microsemi/products/msky/msky.htm |
Microsemi | 07/12/1999 | 3.57 Kb | HTM | msky.htm |
| LTC3703-5 LTC3703-5 LTC3703-5 LTC3703-5 LTC3703 LTC3703 LTC3703 LTC3703 Maximum V IN 60V 100V www.datasheetarchive.com/files/linear/c1003/c1042/c1031/c1115/p2502/p2502-printfriendly.html |
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| LTC3703-5 LTC3703-5 LTC3703-5 LTC3703-5 LTC3703 LTC3703 LTC3703 LTC3703 Maximum V IN 60V 100V www.datasheetarchive.com/files/linear/c1003/c1042/c1031/c1115/p2502/p2502-description.html |
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| LTC3703-5 LTC3703-5 LTC3703-5 LTC3703-5 LTC3703 LTC3703 LTC3703 LTC3703 Maximum V IN 60V 100V www.datasheetarchive.com/files/linear/c1003/c1042/c1032/c1092/p2502/p2502-description-v1.html |
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| LTC3703-5 LTC3703-5 LTC3703-5 LTC3703-5 LTC3703 LTC3703 LTC3703 LTC3703 Maximum V IN 60V 100V www.datasheetarchive.com/files/linear/c1003/c1042/c1032/c1092/p2502/p2502-description.html |
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