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Part Manufacturer Description Datasheet BUY
APTS030A0X3-SRHZ GE Critical Power CONVERTER DC/DC 0.8-3.63V 30A visit GE Critical Power
APTS030 GE Critical Power TLynx, DC-DC (POL) Converter, Input Range: 6.0 - 14.0V; Vout: 0.80 - 3.63V; Iout: 30A; Efficiency: 0.96 visit GE Critical Power
APTS030A0X3-SRPHZ GE Critical Power 12V Mega TLynxTM : Non-Isolated DC-DC Power Module: 6.0Vdc – 14Vdc input; 0.8 to 3.63Vdc Output; 30A Output Current visit GE Critical Power

600v 30a IGBT

Catalog Datasheet MFG & Type PDF Document Tags

ECN3053

Abstract: ECN3054 ) 0.036 99 1.0 600V/30A IGBT (GN6030E) 0.085 97 3.3 600V/30A IGBT (GN6030E) 0.085 327 5.6 600V/30A IGBT (GN6030E) 0.085 557 rr ± ± - - () Lw P , Bipolar Transistor) ( ) 15V AC200240V (10) DC311374V ECN3053 ECN3054 3 IGBT/MOS , 1) 2) 3) ccs kHzD ×× - ja × 0.40 Vcc=15V Vs=280V IGBT C=1,000pF 15A IGBT 0.35 PD(W) 0.30 0.25 @16kHz 0.20 0.17W 0.15 0.10 0.05 0.00 1 10
Hitachi
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TYP200 ICSP AC200 P1/14 IC-SP-95022 P2/14 ECN3053/3054 P3/14
Abstract: 500V/10A MOS 2SK1516 600V/30A IGBT GN6030E 600V/30A IGBT GN6030E 600V/30A IGBT GN6030E Electric gate , . 3-phase 15V Power Supply ECN3053F IGBT/MOS Module M , variable-speed control system with 3-phase motors ECN3053F can drive up to 30A IGBTs or MOSFETs, and control , device should be a device, like a n-channel IGBT, a n-channel MOSFET and so on, which can be turned on by , charging Cb. Resistance Rb(in Fig. 9(b) should be more than a few ohms. Diode Db needs more than 600V Hitachi Semiconductor
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IC-SP-96033 DC311

2kw mosfet

Abstract: AC200 0.036 99 1.0 600V/30A IGBT GN6030E 0.085 97 3.3 600V/30A IGBT GN6030E 0.085 327 5.6 600V/30A IGBT GN6030E 0.085 557 The Cb of 3.3µF having some margin is , . 3-phase 15V Power Supply ECN3053F AC200240V IGBT/MOS Module M , Configuration of a variable-speed control system with 3-phase motors ECN3053F can drive up to 30A IGBTs or , IGBT, a n-channel MOSFET and so on, which can be turned on by a plus gate voltage against the source
Hitachi Semiconductor
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2kw mosfet AC200230V

stepper motor driver full bridge 6A

Abstract: mosfet 600V 20A , 3A IGBT TO220 600V, 7A IGBT TO220 600V, 20A Fast IGBT+Diode TO247 600V, 30A, IGBT TO-247 Mosfet , . Bridge - 600V/35A;1000V/35A Input Rect. Bridge - 1200V / 30A (3-ph.) Input Rect. Bridge - Thyristor - , STTAx06 600V, 7A Fast IGBT+Diode TO220 600V, 10A, low Vcesat, IGBT 600V, 20A Fast IGBT+Diode TO247 , / Max247 /ISOTOP 600V /900V Turboswitch A Ultrafast Diode 8A 2x300V Hyperfast Diode / Low recovery , ; DIP/SO16 H.V. Level Shifter - 600V, +0.13/-0.32A, DIP/SO8 H.V. Half Bridge Driver - 600V, +0.4
STMicroelectronics
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L6385 stepper motor driver full bridge 6A mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 BTW68/69 BF3506TV BHA/K3012TV L4981A/B STTH806TTI

IGBT 500V 35A

Abstract: 600v 30a IGBT Tradeoff: Conduction vs. Switching Loss 600V, 30A IGBT 500V, 35A MOSFET APT30GT60BR APT5014B2LL , frequency ­ Up to about 150 kHz for 600V IGBT, 100kHz for 900V IGBT, 50kHz for 1200V IGBT, hard switched , 600V PT IGBT vs. 500V MOSFETs Size 5 MOSFET 700 600 500 400 300 200 100 0 Same , current Side note 72A, 600V PT IGBT MOSFETs are more efficient at low current Implications , Technology to the Next Power Application Note APT0408 IGBT Technical Overview Distinguishing
Advanced Power Technology
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IGBT 500V 35A what is fast IGBT transistor MOSFET 1200v 30a snubber circuit IGBT tail time dodge Current tail time of IGBT

600v 30a IGBT

Abstract: 6x30A 7MBR 30SA-060 IGBT PIM 600V 6x30A+Chopper Power Integrated Module (PIM) n Features n , toff tf VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=30mA VGE=15V Chip IC = 30A Terminal f , 1.33 0.05 7MBR 30SA-060 IGBT PIM 600V 6x30A+Chopper 7MBR 30SA-060 IGBT PIM 600V 6x30A+Chopper 7MBR 30SA-060 IGBT PIM 600V 6x30A+Chopper 7MBR 30SA-060 IGBT PIM 600V , W V A 2 As V A W V °C V Nm Note: *:Recommendable Value; 2.5 3.5 Nm (M5) IGBT
Fuji Electric
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6x30A igbt 600V 30A 6x30 30a Screw Terminal J 3305 igbt 300V 30A

MM24400E02

Abstract: Power supply for 24V output circuit diagram . BY APPROVED BY SCALE X UNIT X TITLE: ENGINEERING SPEC. OF IPM SDIP 600V 30A THIS , SPEC. OF IPM SDIP 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD , SPEC. OF IPM SDIP 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD , SDIP 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD. AND SHALL NOT , . BY APPROVED BY SCALE X UNIT X TITLE: ENGINEERING SPEC. OF IPM SDIP 600V 30A THIS
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IM24400E MM24400E02 Power supply for 24V output circuit diagram mm244 2N3904 TLP521 E204652

igbt 300V 30A

Abstract: 7MBR30NF060 7MBR30NF060 IGBT Modules IGBT MODULE 600V / 30A / PIM Features · High Speed Switching · , =82 ohm IF=30A,VGE=-10V,-di/dt=100A/µs VCES=600V, VGE=0V VCE=0V, VGE=±20V IC=30A, VGE=15V VCC =300V IC=30A VGE=±15V RG=82 ohm V R=600V trr VFM IRRM Zero gate voltage collector current , Unit V V A A A W V V A A W V A A V V A A A²s °C °C V N·m 7MBR30NF060 IGBT , Cies ton tr toff tf trr ICES IGES VCE(sat) ton tr toff tf IRRM Inverter (IGBT
Fuji Electric
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igbt inverter schematic igbt 30A 100A 600V IGBT INVERTER CIRCUIT ICP Con IGBT 7MBR30NF060 600v 30a

C15-C21

Abstract: fo11 UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE , X UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS , TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF , ., LTD. BY APPROVED BY SCALE X UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A , UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE
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C15-C21 fo11 IM14400-1 MM14400106

MM24400E02

Abstract: IM24400E UNIT X TITLE: ENGINEERING SPEC. OF IPM SDIP 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE , IPM SDIP 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD. AND SHALL , : ENGINEERING SPEC. OF IPM SDIP 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD , ., LTD. SCALE X UNIT X TITLE: ENGINEERING SPEC. OF IPM SDIP 600V 30A THIS DRAWINGS AND , : ENGINEERING SPEC. OF IPM SDIP 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD
Cyntec
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IM14400

Abstract: 600v 30a SCALE X UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS , X UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS , TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF , SCALE X UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS , TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF
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IM14400 MM14400008 diode zener c2 6 ac drive circuit diagram diode zener ZD 103

IM14400-E

Abstract: MM14400E09 SCALE X UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS , X UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS , TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF , SCALE X UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS , TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF
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IM14400-E MM14400E09 IM14400E 2500V

24V, 1W Zener Diode

Abstract: IM14400 UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE , ., LTD. SCALE X UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND , UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE , UNIT X TITLE: ENGINEERING SPEC. OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE , . OF LDIP IPM 600V 30A THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD. AND
Cyntec
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24V, 1W Zener Diode b2s2 ZD24V 1W ZENER DIODE

step recovery diode

Abstract: P channel 600v 30a IGBT showing the IGBT current and voltage waveforms during IGBT turn-on for 1200V/30A fast diodes. (Vcc= VR=600V , current and voltage waveforms during IGBT turn-on for 1200V/30A fast diodes. (Vcc= VR=600V, Ic=IF=30A, di , freewheeling diode power losses curves during IGBT turn-on for 1200V/30A fast diodes. (Vcc= VR=600V, Ic=IF=30A , Conventional Diode Figure (11) 30A/600V Freewheeling diode current and voltage waveforms during IGBT turn-on , ) C-class 30A/600V diode current and voltage waveforms during IGBT turn-on. (Vcc= VR=550V, Ic=IF=30A, di
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step recovery diode P channel 600v 30a IGBT 10a ultra fast diode EPE99 30A ultra fast diode 600v 10A ultra fast recovery diode

FGW30N120H

Abstract: , IC = 30A Tj =25°C Tj =175°C Tj =25°C Tj =175°C VCE=25V VGE=0V f=1MHz VCC = 600V IC = 30A VGE = 15V Tj = 25°C VCC = 600V IC = 30A VGE = 15V RG = 10 L = 500H Energy loss include "tail" and FWD (FDRW20S120J) reverse recovery. Tj = 175°C VCC = 600V IC = 30A VGE = 15V RG = 10 L = 500H Energy loss include , .7 Typical Capacitance V =0V,f=1MHz,T =25°C GE j Graph.8 Typical Gate Charge V =600V,I =30A,T =25°C CC C , =500µH V =15V,R =10 C j CC GE G Graph.10 Typical switching time vs. R T =175°C,V =600V,I =30A,L=500µH V
Fuji Electric
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FGW30N120H

FGW30N120HD

Abstract: =25°C Tj =175°C Tj =25°C Tj =175°C VCE=25V VGE=0V f=1MHz VCC = 600V IC = 30A VGE = 15V Tj = 25°C VCC = 600V IC = 30A VGE = 15V RG = 10 L = 500H Energy loss include "tail" and FWD reverse recovery. Tj = 175°C VCC = 600V IC = 30A VGE = 15V RG = 10 L = 500H Energy loss include "tail" and FWD reverse , / Discrete IGBT C Graph.2 Collector Current vs. switching frequency V =+15V, T 175ºC, V =600V, D=0.5, R , =0V,f=1MHz,T =25°C GE j Graph.8 Typical Gate Charge V =600V,I =30A,T =25°C CC C j 10 4
Fuji Electric
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FGW30N120HD

FGA30N120

Abstract: FGA30N120FTD FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description · Field stop , Turn-Off Switching Loss Ets Total Switching Loss VCC = 600V, IC = 30A, RG = 10, VGE = 15V , Qgc Gate to Collector Charge FGH30N120FTD Rev. A VCC = 600V, IC = 30A, RG = 10, VGE = 15V, Resistive Load, TC = 125oC VCE = 600V, IC = 30A, VGE = 15V 2 www.fairchildsemi.com FGA30N120FTD 1200V, 30A Trench IGBT Package Marking and Ordering Information Symbol Parameter TC = 25
Fairchild Semiconductor
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FGA30N120 fgh30n120 FGA30N120FTDTU HIGH VOLTAGE DIODE for microwave ovens IGBT 1200V 60A FGH30N120FT

igbt 300V 30A

Abstract: igbt 600V 30A 7MBR30NE060 IGBT Modules IGBT MODULE 600V / 30A / PIM Features · High Speed Switching · , =30mA VGE=15V, Ic=30A -Ic=30A VGE=0V, VCE=10V, f=1MHz VCC=300V IC=30A VGE=±15V RG=82 ohm IF=30A VCES=600V, VGE=0V VCE=0V, VGE=±20V IC=30A, VGE=15V VCC=300V IC=30A VGE=±15V RG=82ohm VR=600V trr VFM , IGBT Module Dynamic input characteristics Tj=25°C Switching time vs. RG Vcc=300V, Ic=30A, VGE , A W V A A V V A A A²s °C °C V N·m 7MBR30NE060 IGBT Module Electrical
Fuji Electric
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Ac - Dc converter ic
Abstract: FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description â'¢ Field stop , www.fairchildsemi.com FGA30N120FTD 1200V, 30A Trench IGBT May 2009 Device Marking Device Package , Turn-Off Switching Loss Ets VCC = 600V, IC = 30A, RG = 10â"¦, VGE = 15V, Resistive Load, TC = 25oC , Charge FGH30N120FTD Rev. A VCC = 600V, IC = 30A, RG = 10â"¦, VGE = 15V, Resistive Load, TC = 125oC VCE = 600V, IC = 30A, VGE = 15V 2 www.fairchildsemi.com FGA30N120FTD 1200V, 30A Fairchild Semiconductor
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Abstract: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description â'¢ Field stop , FGH30N120FTD Rev. A 1 www.fairchildsemi.com FGH30N120FTD 1200V, 30A Trench IGBT November 2008 , - 1.70 - mJ Turn-On Delay Time - 40 - ns VCC = 600V, IC = 30A, RG = 10â , FGH30N120FTD Rev. A VCC = 600V, IC = 30A, RG = 10â"¦, VGE = 15V, Resistive Load, TC = 125oC - 364 - ns - 0.74 - mJ VCE = 600V, IC = 30A, VGE = 15V 2 208 - nC - Fairchild Semiconductor
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