NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: New Fast Recovery Diodes in package D-Pak, D 2 Pak, TO-220 & TO-247 QUIETIR Series 600V, 60ns IF , 600 60ns 60ns 8EWF06S 8EWF06S 1,1V 60ns 1,1V 60ns 10ETF04S 10ETF04S 1,1V 60ns 10ETF06S 10ETF06S 1,1V 60ns 1,1V 60ns 10ETF04 10ETF04 1,1V 60ns 10ETF06 10ETF06 1,1V 60ns 1,3V 60ns 20ETF04S 20ETF04S 1,3V 60ns 20ETF06S 20ETF06S 1,3V 60ns 1,3V 60ns 20ETF04 20ETF04 1,3V 60ns 20ETF06 20ETF06 1,3V 60ns 1,3V 60ns 20ETF04FP 20ETF04FP 1,3V 60ns 20ETF06FP 20ETF06FP 1,3V 60ns 1,4V 60ns 30CPF04 30CPF04 ... | Original |
1 pages, |
TO-247 20ETF02 20ETF02FP 20ETF02S 30CPF02 40EPF02 60CPF02 60EPF02 80EPF02 8EWF02S bridge diode 60a 10ETF02 alternators mechanical equipment Rectifiers diodes to-247 datasheet abstract |
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| Abstract: 60mA 80mA ,1A .15 A .25A â- 4A „75A 1.0A CASE K K C C K C C C T S* S* C* S* R â„¢-â„¢ 60ns 60ns 60ns 60ns 60ns 60ns 60ns 60ns 60ns 60ns 60ns 65ns* 60ns 60ns 1000 S6G10UF S6G10UF 1300 SDR1P ... | OCR Scan |
1 pages, |
SHM25F SAM20F SAM50UF SHB15F SHB20F SHB25F SHE15F SHE20F SHE25F SHM15F SHM20F SAM15F SAM25F SHB30F SHM30F SHB15F abstract |
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| Abstract: RURU10050 RURU10050 RURU15050 RURU15050 MUR850 MUR850 RURP1550 RURP1550 RURP850 RURP850 60ns 1.5V 60ns 1.5V 60ns 1.6V 75ns 1.6V 85ns 1.6V 75ns 1.6V 85ns 1.6V 100ns 1.6V 100ns 60ns 1.5V 60ns 1.5V MUR8100E MUR8100E RURP15100 RURP15100 RURP30100 RURP30100 RURG30100 RURG30100 , RURG8060 RURG8060 RURU5060 RURU5060 RURU8060 RURU8060 RURU10060 RURU10060 RURU15060 RURU15060 MUR860 MUR860 RURP1560 RURP1560 RURP860 RURP860 60ns 1.5V 60ns 1.5V 60ns 1.6V 75ns 1.6V 85ns 1.6V 75ns 1.6V 85ns 1.6V 100ns 1.6V 100ns 60ns 1.5V 60ns 1.5V RURD660S RURD660S 60ns 1.5V 50A MUR880E MUR880E RURP1580 RURP1580 RURP3080 RURP3080 RURG3080 RURG3080 RURG5080 RURG5080 RURG8080 RURG8080 RURU5080 RURU5080 RURU8080 RURU8080 ... | Original |
2 pages, |
RURP810 MUR1510 MUR1550 MUR810 MUR880 RURD410 RURD610 RURD610S RURD615S RURG3010 RURP1510 RURP3010 BYW51150 MUR850 MUR1520 equivalent RURD610S abstract |
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| Abstract: RURU5060 RURU5060 RURU8060 RURU8060 RURU10060 RURU10060 RURU15060 RURU15060 RURD460S RURD460S RURD660S RURD660S RURD860S RURD860S RURP860 RURP860 RURP1560 RURP1560 1.5V 60ns 1.5V 60ns 1.5V 70ns 1.5V 60ns 1.5V 60ns 1.5V 60ns 1.5V 60ns 1.6V 75ns 1.6V 85ns 1.6V 75ns 1.6V 85ns , RURD850S RURD850S RURP850 RURP850 RURP1550 RURP1550 1.5V 60ns 1.5V 60ns 1.5V 70ns 1.5V 60ns 1.5V 60ns 1.5V 60ns 1.5V 60ns , RURU10040 RURU10040 RURU15040 RURU15040 RURD440S RURD440S RURD640S RURD640S RURD840S RURD840S RURP840 RURP840 RURP1540 RURP1540 1.5V 60ns 1.5V 60ns 1.5V 70ns 1.3V 60ns 1.25V 60ns 1.5V 60ns 1.5V 60ns 1.6V 75ns 1.6V 85ns 1.6V 75ns 1.6V 85ns 1.6V 100ns 1.6V ... | Original |
2 pages, |
RURP815 MUR1515 MUR1560 MUR810 MUR815 MUR850 MUR850 diode MUR880E RURG3010 RURG3015 RURP1510 RURP3010 RURP3015 RURP810 MUR1510 MUR810 abstract |
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| Abstract: 7B 7C 7E 7H 8B 8C : : : : : : : : : : : : : 55ns 60ns 70ns 85ns (Async , 60ns/Burst 60ns/Burst 60ns/Burst 70ns/Burst 70ns/Burst 70ns/Burst 70ns/Burst 80ns/Burst 85ns ... | Original |
1 pages, |
PSRAM transistor 6c x datasheet abstract |
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| Abstract: 1-888-INTERSIL 1-888-INTERSIL or 321-724-7143 RURD840 RURD840, RURD840S RURD840S, 1.5V 70ns MUR1540 MUR1540, RURP1540 RURP1540, 1.25V 60ns RURD860 RURD860, RURD860S RURD860S, 1.5V 70ns MUR860 MUR860, RURP860 RURP860, 1.5V 60ns MUR1560 MUR1560, RURP1560 RURP1560, 1.5V 60ns RURP3060 RURP3060 , RURD660 RURD660, RURD660S RURD660S, 1.5V 60ns MUR840 MUR840, RURP840 RURP840, 1.3V 60ns MUR8100E MUR8100E, RURP8100 RURP8100, 1.8V 110ns RURD460 RURD460, RURD460S RURD460S, 1.5V 60ns 2.1V 130ns 2.1V 150ns | RURD6120 RURD6120, RURD6120S RURD6120S, 2.1V 90ns 1.0V 50ns 1.5V 60ns 30A SINGLE LEAD TO-218 IF(AVG) IF(AVG) 50A 75A/80A 50A 75A ... | Original |
4 pages, |
1200v 30A to247 Rectifier 1A 1200V RhRP3060 RHRP860C RURD420 RURD420S RURD460 RURD460S RURD620 RURD620S RURD660 RURD660S RURD840 RURD840S RURD420 abstract |
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| Abstract: 0.85|is 700|is 780|B 'on-rise 1|is 1 |is 800|is aoops off-oly 100ns 100ns 60ns 60ns off-full 60ns 60ns 60ns 60ns Package 1.2*1.6 MLPM SC-70-6 SC-70-6 1.2x1.6 MtPM SC-70-6 SC-70-6 1.2x1.6 MLP-4 SC-70-6 SC-70-6 1.2x1.6 MLP-4 ... | OCR Scan |
1 pages, |
SC-70-6 P-Channel 01 MIC94063 MIC94062 MIC94060 MIC94061 High-Side MIC94060/1/2/3 MIC94060/1/2/3 abstract |
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| Abstract: 3.0V 100ns RHRG7580 RHRG7580 3.0V 100ns RHRG7570 RHRG7570 3.0V 100ns RHRG7560 RHRG7560 2.1V 60ns RHRG7550 RHRG7550 2.1V 60ns RHRG7540 RHRG7540 2.1V 60ns 2 LEADED TO-247 RHRG3040 RHRG3040 2.1V 45ns NOTE: VF at IF(AVG), TJ = , 3.0V 100ns RHRU7560 RHRU7560 2.1V 60ns RHRU7550 RHRU7550 2.1V 60ns RHRU7540 RHRU7540 2.1V 60ns 75A 100A RHRU100120 RHRU100120 3.2V 100ns RHRU10060 RHRU10060 2.1V 60ns RHRU10050 RHRU10050 2.1V 60ns RHRU10040 RHRU10040 2.1V 60ns IF(AVG ... | Original |
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RHRU7540 RHRD640S RHRG1550CC RHRG5040 RHRG7540 RHRP15120 RHRP1540 RHRP3040 RHRP4120CC RHRP840 RHRU10040 RHRU15040 RHRU5040 RHRD440 RHRP840 abstract |
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| Abstract: 50ns 2.1V 60ns 2.1V 50ns 2.1V 60ns 2.1V 60ns 8A 600V 6A IF(AVG) RHRD450 RHRD450 RHRD650 RHRD650 , 50ns 2.1V 60ns 2.1V 50ns 2.1V 60ns 2.1V 60ns 4A IF(AVG) SINGLE LEAD TO-218 500V 6A , 2.1V 35ns 2.1V 40ns 2.1V 45ns 2.1V 45ns 2.1V 50ns 2.1V 60ns 2.1V 50ns 2.1V 60ns 2.1V 60ns ... | Original |
2 pages, |
RHRU15060 RHRD440S RHRD640 RHRD640S RHRG1550CC RHRG50120 RHRP1540 RHRP3040 RHRP840 RHRU100120 RHRU15040 RHRU15050 RHRD440 RHRG3040 datasheet abstract |
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| Abstract: 60ns T6 from 10ns to 60ns T33 from 10ns to 60ns T35 from 0ns to 50ns REASON FOR CHANGE: Change ... | Original |
2 pages, |
ST78C36CJ44-F ST78C36ACJ44-F ST78C36CJ44TR-F ST78C36ACJ44-F abstract |
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| Abstract: About This Guide NEC Electronics is proud to offer the industry's most comprehensive line of memory products, reflecting the greatest diversity of device types, configurations, and packaging options in each of the major memory groups. handsomely for NEC, its U.S. customers, and the community of greater Sacramento, the capital of California. Now we've expanded on the close relationships we founded in the U.S. with the dedication of our new Mega-Line in Roseville. This selection gu ... | Original |
11 pages, |
uPD48817 MC-421000A36BJ MC-421000A8BA MC-421000AA64FA MC-422000A32F MC-422000AA40F MC-428000A36BJ UPD431232LGF uPD482445 422000AA40F MC-421000A36BE UPD42101 uPD42101C datasheet abstract |
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| Abstract: SPECIFICATION NOTICE LTC1451/LTC1452 LTC1451/LTC1452 LTC1453 LTC1453 April 1999 The LTC�51/LTC1452/LTC1453 51/LTC1452/LTC1453 data sheet has been revised to reflect the changes shown below in bold. All other specifications remain unchanged. For complete specifications, typical performance curves and applications information, please see the LTC1451/LTC1452/LTC1453 LTC1451/LTC1452/LTC1453 , LTC and LT are registered trademarks of Linear Technology Corporation. data sheet. ELECTRICAL CHARACTERISTICS VCC = 5V (LTC1451/LTC1452 LTC1451/LTC1452), VCC = 3V (LTC1453 LTC1453), TA ... | Original |
1 pages, |
LTC1453 LTC1451/LTC1452 1451/LTC1452/LTC1453 LTC1451/LTC1452/LTC1453 LTC1451/LTC1452 abstract |
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| Abstract: HB56A132 HB56A132 Series 1,048,576-word Ã- 32-Bit High Density Dynamic RAM Module Description The HB56A132 HB56A132 is a 1 M Ã- 32 dynamic RAM module, mounted 8 pieces of (4-Mbit) DRAM (HM514400CS/CLS HM514400CS/CLS) sealed in SOJ package. An outline of the HB56A132 HB56A132 is 72-pin single in-line package. Therefore, the HB56A132 HB56A132 makes high density mounting possible without surface mount technology. The HB56A132 HB56A132 provides common data inputs and outputs. Decoupling capacitors are mounted beneath each SOJ. Features · 72-pin sin ... | Original |
2 pages, |
diode 6cl HB56A132 HM514400CS/CLS HB56A132 abstract |
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| Abstract: HB56D136 HB56D136 Series 1,048,576-word Ã- 36-bit High Density Dynamic RAM Module Description The HB56D136 HB56D136 is a 1-M Ã- 36-bit dynamic RAM module, mounted 8 pieces of 4 Mbit DRAM (HM514400CS/CLS HM514400CS/CLS) sealed in SOJ package and 2 pieces of 2 Mbit DRAM (HM512200BS/BLS HM512200BS/BLS) sealed in SOJ package. An outline of the HB56D136 HB56D136 is 72-pin single in-line package. Therefore, the HB56D136 HB56D136 makes high density mounting possible without surface mount technology. The HB56D136 HB56D136 provides common data inputs and outputs. Decoupl ... | Original |
2 pages, |
HB56D136 HM514400CS/CLS HM512200BS/BLS HB56D136 abstract |
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| Abstract: HB56D236 HB56D236 Series 2,097,152-word Ã- 36-bit High Density Dynamic RAM Module Description The HB56D236 HB56D236 is a 2M Ã- 36-bit dynamic RAM module, mounted 16 pieces of 4 Mbit DRAM (HM514400CS/CLS HM514400CS/CLS) sealed in SOJ package and 4 pieces of 2 Mbit DRAM (HM512200BS/BLS HM512200BS/BLS) sealed in SOJ package. An outline of the HB56D236 HB56D236 is 72-pin single in-line package. Therefore, the HB56D236 HB56D236 makes high density mounting possible without surface mount technology. The HB56D236 HB56D236 provides common data inputs and outputs. Decoupl ... | Original |
2 pages, |
HB56D236 HM514400CS/CLS HM512200BS/BLS HB56D236 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| maximum memory size, using four 16M x 32/36 SIMM modules, is 256 MB. Memory timing requires 60 ns fast page devices or, for optimum performance, 60 ns EDO DRAM. The four sockets are arranged in two possible to have 60 ns Fast Page DRAM in one bank and 60 ns EDO DRAM in the other. In that case, each bank x 32 (4MB), Non-parity - 60ns Micron Technology FULL MT8D132M-6 MT8D132M-6 MT8D132M-6 MT8D132M-6 1M x 32 (4MB), Non-parity - 70ns None at this time. 1M x 36 (4MB), Parity - 60ns None at this time. 2M x 32 (8MB www.datasheetarchive.com/files/intel/design/motherbd/vs/vs_mem-v7.htm |
Intel | 01/11/1998 | 10.74 Kb | HTM | vs_mem-v7.htm |
| , is 256 MB. Memory timing requires 60 ns fast page devices or, for optimum performance, 60 ns EDO DRAM 32 8M x 32 80 MB It is even possible to have 60 ns Fast Page DRAM in one bank and 60 ns Number Comments 1M x 32 (4MB), Non-parity - 60ns Micron Technology FULL MT8D132M-6 MT8D132M-6 MT8D132M-6 MT8D132M-6 1M x 32 (4MB), Non-parity - 70ns None at this time. 1M x 36 (4MB), Parity - 60ns None at this time. 2M x 32 (8MB), Non-parity - 60ns Micron Technology FULL MT16D232M-6 MT16D232M-6 MT16D232M-6 MT16D232M-6 Samsung FULL KMM5322200AW-6 KMM5322200AW-6 KMM5322200AW-6 KMM5322200AW-6 www.datasheetarchive.com/files/intel/design/motherbd/vs/vs_mem-v2.htm |
Intel | 01/08/1998 | 10.47 Kb | HTM | vs_mem-v2.htm |
| maximum memory size, using four 16M x 32/36 SIMM modules, is 256 MB. Memory timing requires 60 ns fast page devices or, for optimum performance, 60 ns EDO DRAM. The four sockets are arranged in two possible to have 60 ns Fast Page DRAM in one bank and 60 ns EDO DRAM in the other. In that case, each bank x 32 (4MB), Non-parity - 60ns Micron Technology FULL MT8D132M-6 MT8D132M-6 MT8D132M-6 MT8D132M-6 1M x 32 (4MB), Non-parity - 70ns None at this time. 1M x 36 (4MB), Parity - 60ns None at this time. 2M x 32 (8MB www.datasheetarchive.com/files/intel/design/motherbd/vs/vs_mem.htm |
Intel | 01/02/1999 | 10.74 Kb | HTM | vs_mem.htm |
| maximum memory size, using four 16M x 32/36 SIMM modules, is 256 MB. Memory timing requires 60 ns fast page devices or, for optimum performance, 60 ns EDO DRAM. The four sockets are arranged in two possible to have 60 ns Fast Page DRAM in one bank and 60 ns EDO DRAM in the other. In that case, each bank x 32 (4MB), Non-parity - 60ns Micron Technology FULL MT8D132M-6 MT8D132M-6 MT8D132M-6 MT8D132M-6 1M x 32 (4MB), Non-parity - 70ns None at this time. 1M x 36 (4MB), Parity - 60ns None at this time. 2M x 32 (8MB www.datasheetarchive.com/files/intel/products two & tools/design/motherbd/vs/vs_mem.htm |
Intel | 02/05/1999 | 10.74 Kb | HTM | vs_mem.htm |
| HYB 3118160BSJ-60 3118160BSJ-60 3118160BSJ-60 3118160BSJ-60 1M x 16Bit 3.3V 60ns FPM HYB 3118165BSJ-60 3118165BSJ-60 3118165BSJ-60 3118165BSJ-60 1M x 16Bit 3.3V 60ns EDO HYB 3118165BST-60 3118165BST-60 3118165BST-60 3118165BST-60 1M x 16Bit 3.3V 60ns EDO HYB 5118160BSJ-60 5118160BSJ-60 5118160BSJ-60 5118160BSJ-60 1M x 16Bit 5V 60ns FPM HYB 5118165BSJ-60 5118165BSJ-60 5118165BSJ-60 5118165BSJ-60 1M x 16Bit 5V 60ns EDO www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~2385.htm |
Infineon | 26/10/2000 | 27.01 Kb | HTM | pro~2385.htm |
| timing requires 60 ns fast page devices or, for optimum performance, 60 ns EDO DRAM. The four MB It is even possible to have 60 ns Fast Page DRAM in one bank and 60 ns EDO DRAM in the Number Comments 1M x 32 (4MB), Non-Parity - 60ns Micron FULL MT8D132M-6 MT8D132M-6 MT8D132M-6 MT8D132M-6 1st Tech Corporation BASIC 20-132-60T 20-132-60T 20-132-60T 20-132-60T Visiontek Inc. BASIC VT69030 VT69030 VT69030 VT69030.0 1M x 36 (4MB), Parity - 60ns Toshiba BASIC THM3610B0AS-60 THM3610B0AS-60 THM3610B0AS-60 THM3610B0AS-60 2M x 32 (8MB), Non-Parity - 60ns Samsung FULL KMM5322200AW-6 KMM5322200AW-6 KMM5322200AW-6 KMM5322200AW-6 1st Tech www.datasheetarchive.com/files/intel/products/design/motherbd/vs/vs_mem.htm |
Intel | 23/10/1996 | 9.77 Kb | HTM | vs_mem.htm |
| optimum performance, 60 ns EDO DRAM. If the maximum external microprocessor clock speed is 60 MHz or FULL KMM5361203AW-7 KMM5361203AW-7 KMM5361203AW-7 KMM5361203AW-7 Micron Technology FULL MT9D136M-70 MT9D136M-70 MT9D136M-70 MT9D136M-70 1M x 36 (4MB), Parity - 60ns None at ), Non-parity - 60ns Micron Technology FULL MT8D132M-6 MT8D132M-6 MT8D132M-6 MT8D132M-6 2M x 36 (8MB), Parity - 70 FULL MT18D236M-6 MT18D236M-6 MT18D236M-6 MT18D236M-6 2M x 36 (8MB), Parity - 60ns Samsung FULL KMM5362203BW-6U KMM5362203BW-6U KMM5362203BW-6U KMM5362203BW-6U 2M x 32 (8MB), Non-parity - 70ns Micron Technology FULL MT16D232M-7 MT16D232M-7 MT16D232M-7 MT16D232M-7 2M x 32 (8MB), Non-parity - 60ns Micron Technology www.datasheetarchive.com/files/intel/design/motherbd/tc/tc_mem-v7.htm |
Intel | 01/11/1998 | 10.47 Kb | HTM | tc_mem-v7.htm |
| optimum performance, 60 ns EDO DRAM. If the maximum external microprocessor clock speed is 60 MHz or FULL KMM5361203AW-7 KMM5361203AW-7 KMM5361203AW-7 KMM5361203AW-7 Micron Technology FULL MT9D136M-70 MT9D136M-70 MT9D136M-70 MT9D136M-70 1M x 36 (4MB), Parity - 60ns None at ), Non-parity - 60ns Micron Technology FULL MT8D132M-6 MT8D132M-6 MT8D132M-6 MT8D132M-6 2M x 36 (8MB), Parity - 70 FULL MT18D236M-6 MT18D236M-6 MT18D236M-6 MT18D236M-6 2M x 36 (8MB), Parity - 60ns Samsung FULL KMM5362203BW-6U KMM5362203BW-6U KMM5362203BW-6U KMM5362203BW-6U 2M x 32 (8MB), Non-parity - 70ns Micron Technology FULL MT16D232M-7 MT16D232M-7 MT16D232M-7 MT16D232M-7 2M x 32 (8MB), Non-parity - 60ns Micron Technology www.datasheetarchive.com/files/intel/design/motherbd/tc/tc_mem-v2.htm |
Intel | 02/08/1998 | 10.46 Kb | HTM | tc_mem-v2.htm |
| . Memory timing requires 70 ns fast page devices or, for optimum performance, 60 ns EDO DRAM. If the 70 ns Fast Page DRAM in one bank and 60 ns EDO DRAM in the other. In that case, each bank is Micron Technology FULL MT9D136M-70 MT9D136M-70 MT9D136M-70 MT9D136M-70 1M x 36 (4MB), Parity - 60ns None at this time. 1M x 32 (4MB), Non-parity - 70ns Micron Technology FULL MT8D132M-7 MT8D132M-7 MT8D132M-7 MT8D132M-7 1M x 32 (4MB), Non-parity - 60ns Micron ), Parity - 60ns Samsung FULL KMM5362203BW-6U KMM5362203BW-6U KMM5362203BW-6U KMM5362203BW-6U 2M x 32 (8MB), Non-parity - 70ns Micron Technology www.datasheetarchive.com/files/intel/design/motherbd/tc/tc_mem.htm |
Intel | 01/02/1999 | 10.7 Kb | HTM | tc_mem.htm |
| . Memory timing requires 70 ns fast page devices or, for optimum performance, 60 ns EDO DRAM. If the 70 ns Fast Page DRAM in one bank and 60 ns EDO DRAM in the other. In that case, each bank is Micron Technology FULL MT9D136M-70 MT9D136M-70 MT9D136M-70 MT9D136M-70 1M x 36 (4MB), Parity - 60ns None at this time. 1M x 32 (4MB), Non-parity - 70ns Micron Technology FULL MT8D132M-7 MT8D132M-7 MT8D132M-7 MT8D132M-7 1M x 32 (4MB), Non-parity - 60ns Micron ), Parity - 60ns Samsung FULL KMM5362203BW-6U KMM5362203BW-6U KMM5362203BW-6U KMM5362203BW-6U 2M x 32 (8MB), Non-parity - 70ns Micron Technology www.datasheetarchive.com/files/intel/products two & tools/design/motherbd/tc/tc_mem.htm |
Intel | 02/05/1999 | 10.7 Kb | HTM | tc_mem.htm |