NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 60-VOLT DUAL RELAY DRIVER LS1014AB LS1014AB Description The LS1014AB LS1014AB integrated circuit consists of two , V- 8-1 LS1014AB LS1014AB 60-VOLT DUAL RELAY DRIVER Maximum Ratings At 25 °C Stresses exceeding the values , (MEASURE) +6.25 V h>SL (MEASURE) +6.25 V Figure 4. Logic Supply, Current On 8-4 60-VOLT DUAL RELAY DRIVER , , Current Off »«.5 V «4.5 V Figure 6. Logic Input Current, On LS1014AB LS1014AB 60-VOLT DUAL RELAY DRIVER Test , Voltage, High 8-6 60-VOLT DUAL RELAY DRIVER LS1014AB LS1014AB Test Circuits (Continued) *&2SV Characteristic Curves ... | OCR Scan |
9 pages, |
ttl relay driver 24 pin relay driver Dual relay Driver 5 volt 4 pin relay relay 9 volt relay driver relay Driver circuit diagram relay 12 volt 30 ma relay 5 volt 55 volt switching power supply circuit 12 volt 6 pin relay Dual relay Driver circuit diagram 60-VOLT LS1014AB 60-VOLT abstract |
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| Abstract: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170F BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS(ON) = 5 D S G PARTMARKING DETAIL MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE V DS UNIT 60 V Continuous Drain Current at T amb=25°C ID 0.15 mA Pulsed Drain Current I DM 3 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage ... | Original |
1 pages, |
mv BS170F ZVN3306F DSS SOT23 BS170F MV SOT23 BS170F abstract |
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| Abstract: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170F BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS(ON) = 5 S D G PARTMARKING DETAIL MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM V GS Ptot Tj:Tstg VALUE 60 0.15 3 ± 20 330 -55 to +150 UNIT V mA A V mW °C ... | Original |
1 pages, |
ZVN3306F BS170F BS170F abstract |
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| Abstract: J85500Q-1 J85500Q-1 Table of Contents 1 Introduction 60-volt Cabinet Power System Applications , 6-2 Figure 6-2: ES664 ES664 Rectifier Faceplate 6-3 Figure 6-1: 60-Volt Temperature Compensation , Specifications 2-7 Table 2-C: CPS 60-Volt/60 Hz Plant Specifications 2-8 Table 3-A: 60V/60 Hz CPS , 60-volt Cabinet Power System The low-maintenance, outside-plant 60-volt/60 Hz CPS integrates advanced , weight, and an extended service life. Applications Lucent Technologies has developed the 60-volt ... | Original |
64 pages, |
IR30C IEC wiring schematic symbols Earthquake Signal Conditioning System general electric rectifier trouble Lucent rectifier battery schematic J85500Q-1 J85500Q-1 abstract |
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| Abstract: E L E C T R O N I C SBL30LL60PT SBL30LL60PT Power Schottky Rectifier - 30Amp 60Volt Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity -Low power loss, high efficiency TO-247AD L C Application -Switching-Mode Power Supply F E B Absolute maximum ratings I D Symbol Ratings Unit Conditions IF(AV ... | Original |
2 pages, |
datasheet abstract |
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| Abstract: E L E C T R O N I C SBR52 SBR52~SBR56 SBR56 Schottky Rectifier - 5Amp 20~60Volt Features -For surface mounted applications -Low profile package -Built-in strain relief -Metal silicon junction, majority carrier conduction -Low power loss, high efficiency -High current capability, low forward voltage drop -For use in low voltage high frequency inverters, free wheeling and polarity protection application -High temperature soldering guaranteed -High reliability -High surge current ... | Original |
2 pages, |
SBR56 datasheet abstract |
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| Abstract: , reverse current of 1.0mA, Reverse voltage of 6.0volt and RL=100 . 3. ESD sensitive product handling ... | Original |
2 pages, |
GDMBD4148 BD4148 BD4148 abstract |
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| Abstract: current of 10mA, reverse current of 1.0mA, Reverse voltage of 6.0volt and RL=100 . 3. ESD sensitive ... | Original |
2 pages, |
GSMBD4148 BD4148 BD4148 abstract |
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| Abstract: E L E C T R O N I C SBL1060FCT SBL1060FCT Power Schottky Rectifier - 10Amp 60Volt Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity -Low power loss, high efficiency ITO-220AB ITO-220AB L B Application -Switching-Mode Power Supply M C D K A Absolute maximum ratings E Symbol Ratings Unit Conditions IF ... | Original |
2 pages, |
SBL1060FCT datasheet abstract |
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| Abstract: E L E C T R O N I C SBR32 SBR32~SBR36 SBR36 Schottky Rectifier - 3Amp 20~60Volt Features -For surface mounted applications -Low profile package -Built-in strain relief -Metal silicon junction, majority carrier conduction -Low power loss, high efficiency -High current capability, low forward voltage drop -For use in low voltage high frequency inverters, free wheeling and polarity protection application -High temperature soldering guaranteed -High reliability -High surge current ... | Original |
2 pages, |
schottky rectifier 3amp SBR36 SBR35 SBR34 SBR32 datasheet abstract |
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| Abstract: Wafer Fab Capability Wafer Loading: Automated wafer loading throughout the Fab prevents handling-induced mechanical damage. Ion Implant: State-of-the-art high current implanter capable of the full range of dose requirements. Wafer Cleaning: Semi-automated wafer cleaning at all diffusion operations using state-of-the-art chemistry resulting in low particulate and metallic levels. Diffusion: Automated diffusion tubes with cantilever load, computerized control and recipe management, and ... | Original |
2 pages, |
photolithography datasheet abstract |
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| Abstract: GC1700A GC1700A GC1720 GC1720 ® TM CONTROL DEVICES 60 Volt Abrupt Junction Tuning Varactors RoHS Compliant DESCRIPTION KEY FEATURES The GC1700 GC1700 series varactors are silicon abrupt junction devices. They offer the highest Q and lowest series resistance available in a 60 Volt silicon varactor. Highest Q for 60 Volt Varactors This series of diodes meets RoHS requirements per EU Directive 2002/95/EC 2002/95/EC. The standard terminal finish is gold unless otherwise specified. Consult the factory i ... | Original |
3 pages, |
GC1720 GC1706 GC1705 GC1704 GC1703 GC1702 GC1701 GC1700A GC1700 GC1700A abstract |
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| Abstract: 60-Volt Abrupt Tuning Varactors Description The MicroMetrics MTV 4060 series Tuning Varactors are silicon abrupt junction devices. They offer the highest Q and lowest resistance available in 60 volt tuning diodes. A unique silicon dioxide passivation process assures greater stability, reliability and low leakage currents at higher temperatures. Applications The MTV 4060 series Tuning Varactors are used for both narrow and wide band tuning through X-band. These devices are used in ... | Original |
2 pages, |
Tuning Varactors MicroMetrics MTV4060-01 MTV4060-02 MTV4060-03 MTV4060-04 MTV4060-05 MTV4060-06 MTV4060-07 MTV4060-09 MTV4060-10 MTV4060-11 MTV4060-14 MTV4060-08 datasheet abstract |
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| Abstract: TOC Tuning Varactors 60 VOLT ABRUPT JUNCTION VARACTOR DIODES RATINGS DESCRIPTION The GC1700 GC1700 series varactors are silicon abrupt junction devices. They offer the highest Q and lowest series resistance available in a 60 Volt silicon varactor. Minimum Voltage breakdown: 60 V at 10uA max APPLICATIONS Capacitance-Temp. Coefficient: 300 ppm/ºC at VR=-4V The GC1700 GC1700 series varactors are used for moderate band width tuning. They are available in values appropriate for VHF through K ... | Original |
2 pages, |
Varactor Diodes GC1700A GC1701 GC1702 GC1703 GC1704 GC1705 GC1706 GC1707 GC1708 varactor GC1700 datasheet abstract |
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| Abstract: Philips ontvanglamp D 2 Gloeispanning ly = 3,5 volt Gloeistroom = ca. 0,5 amp. Anodespanning Va - 40-100 volt D 2 is een hoogvacaum - ontvanglamp (triode) voor een 4~volts accu, zoowel geschikt voor detectie, ah voor hoog- en laagfrequentie-versterking. Bij gebruik van een 4-volts accu moet een regelbare gloeistroom-weerstand van 6 ohm voorgeschakeld worden. Philips ontvanglamp D 2 Gloeispanning.v^ =3,5 volt Gloeistroom.if = ca. 0,5 amp. Anodespanning . . ua = 40-10 ... | OCR Scan |
2 pages, |
datasheet abstract |
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| Abstract: ZA-1193-3 ZA-1193-3 Operating Voltage: 60 Vdc Operating Current (max): 3 AMPERES Temperature Range (storage): -40 to 85C Temperature Range (operating): -40 to 70C Design Specifications: Humidity: Mil-Std-810, 507.3, cycle 5 Temperature: Mil-Std-810, 507.3-1 Vibration: Mil-Std-810, Shock: Mil-Std-810, Proc. (5), Crash hazard Order p/n: ZA-1193-3 ZA-1193-3 The ZA -1193-3 is an interference filter specifically designed for use in the automotive environment. The filter will attenuate noise frequencies as ... | Original |
1 pages, |
MIL-STD-810 ZA-1193-3 ZA-1193-3 abstract |
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| Abstract: ZA-1193-3C ZA-1193-3C Operating Voltage: 60 Vdc Operating Current (max): 3 AMPERES Temperature Range (storage): -40 to 85C Temperature Range (operating): -40 to 70C Design Specifications: Humidity: Mil-Std-810, 507.3, cycle 5 Temperature: Mil-Std-810, 507.3-1 Vibration: Mil-Std-810, Shock: Mil-Std-810, Proc. (5), Crash hazard Order p/n: ZA-1193-3C ZA-1193-3C This filter is RoHS compliant The ZA -1193-3C -1193-3C is an interference filter specifically designed for use in the automotive environment. The filter w ... | Original |
1 pages, |
MIL-STD-810 ZA-1193-3C -1193-3C ZA-1193-3C abstract |
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| Abstract: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION General Description: 60 V TYPE: MBR360 MBR360 Single Anode 3A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @ 3 Amperes, Ta=25°C Maximum Instantaneous Reverse Voltage VR= 60 Volt, Ta=25°C Maximum Junction Capacitance @ 0V, 1MHZ MAXIMUM RATINGS Nonrepetitive Peak Surge Current Operating Jun ... | Original |
1 pages, |
MBR360 MBR360 abstract |
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| Abstract: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SB560 SB560 Single Anode General Description: 60 V 5 A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @ 5 Amperes,Ta=25°C Maximum Instantaneous Reverse Voltage VR= 60 Volt, Ta=25°C Maximum Junction Capacitance @ 0V, 1MHZ MAXIMUM RATINGS Nonrepetitive Peak Surge Current Operating Junct ... | Original |
1 pages, |
SB560 IR 1838 SB560 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| Transistors 0.6 Amps 60 Volts Maximum Ratings -to-Base BVCBO 60 Volts Voltage Collector to Emitter Open Vceo 60 Volts Voltage Emitter to Base Open Vebo www.datasheetarchive.com/files/microsemi/products/18670-v1.htm |
Microsemi | 04/01/1999 | 3.8 Kb | HTM | 18670-v1.htm |
| : NPN Transistor 0.8 Watts 60 Volts Breakdown Voltage Collector-to-Base BVCBO 60 Volts Voltage Collector to Emitter Open Vceo 60 Volts Voltage Emitter to Base Open www.datasheetarchive.com/files/microsemi/products/19688-v1.htm |
Microsemi | 04/01/1999 | 5.78 Kb | HTM | 19688-v1.htm |
| : NPN Transistor 0.8 Watts 60 Volts Breakdown Voltage Collector-to-Base BVCBO 60 Volts Voltage Collector to Emitter Open Vceo 60 Volts Voltage Emitter to Base Open www.datasheetarchive.com/files/microsemi/products/19694-v1.htm |
Microsemi | 04/01/1999 | 5.78 Kb | HTM | 19694-v1.htm |
| MOSFET 60 Volts 98 Watts Maximum Ratings -to-Source BVDSS 60 Volts Gate Threshold Voltage (max) VGS(th) max 60 Volts Input Capacitance/Source to Drain Short Ciss www.datasheetarchive.com/files/microsemi/products/24570.htm |
Microsemi | 04/01/1999 | 4.66 Kb | HTM | 24570.htm |
| : NPN Transistor 0.8 Watts 60 Volts Breakdown Voltage Collector-to-Base BVCBO 60 Volts Voltage Collector to Emitter Open Vceo 60 Volts Voltage Emitter to Base Open www.datasheetarchive.com/files/microsemi/products/19687-v1.htm |
Microsemi | 04/01/1999 | 5.78 Kb | HTM | 19687-v1.htm |
| : NPN Transistor 0.8 Watts 60 Volts Breakdown Voltage Collector-to-Base BVCBO 60 Volts Voltage Collector to Emitter Open Vceo 60 Volts Voltage Emitter to Base Open www.datasheetarchive.com/files/microsemi/products/19693-v1.htm |
Microsemi | 04/01/1999 | 5.78 Kb | HTM | 19693-v1.htm |
| .4 Watts 60 Volts Maximum Ratings and Electrical Breakdown Voltage Collector-to-Base BVCBO 60 Volts Voltage Collector to Emitter Open Vceo 60 Volts Voltage Emitter to Base Open www.datasheetarchive.com/files/microsemi/products/19870-v1.htm |
Microsemi | 04/01/1999 | 5.83 Kb | HTM | 19870-v1.htm |
| ) 0.4 Watts 60 Volts Maximum Ratings and Electrical Breakdown Voltage Collector-to-Base BVCBO 60 Volts Voltage Collector to Emitter Open Vceo 60 Volts Voltage Emitter to Base Open www.datasheetarchive.com/files/microsemi/products/18648-v1.htm |
Microsemi | 04/01/1999 | 5.39 Kb | HTM | 18648-v1.htm |
| 0.8 Watts 60 Volts Maximum Ratings and Electrical Breakdown Voltage Collector-to-Base BVCBO 60 Volts Voltage Collector to Emitter Open Vceo 60 Volts Voltage Emitter to Base Open www.datasheetarchive.com/files/microsemi/products/19686-v1.htm |
Microsemi | 04/01/1999 | 5.67 Kb | HTM | 19686-v1.htm |
| -to-Base BVCBO 60 Volts Voltage Collector to Emitter Open Vceo 60 Volts Voltage Emitter to Base Open Vebo -Thru Hole) 0.4 Watts 60 Volts Maximum Ratings and Electrical Characteristics www.datasheetarchive.com/files/microsemi/products/19871-v1.htm |
Microsemi | 04/01/1999 | 5.79 Kb | HTM | 19871-v1.htm |