NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Volts 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5e-09 1e-08 Seconds Rising Waveform of Model AT16646 AT16646_IO 1.5e-08 'typ' 'min' 'max' 2e-08 ... | Original |
1 pages, |
AT16646 AT16646 abstract |
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| Abstract: Volts 0 0.5 1 1.5 2 2.5 3 3.5 0 1e-09 2e-09 3e-09 4e-09 5e-09 Seconds 6e-09 7e-09 Falling Waveform of Model AT16646 AT16646_IO 8e-09 9e-09 'typ' 'min' 'max' 1e-08 ... | Original |
1 pages, |
AT16646 AT16646 abstract |
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| Abstract: 4e-09 6e+09 3 5e-09 4e+09 4 Rg t Figure 3. The gate voltage, Vg, plotted against , 1.2 3.0 1.0 0.8 2.5 2.0 0.6 1.5 0.4 5e-09 0.2 4e-09 0 1e-08 3e-09 8e-09 , 8e-09 2e-09 3e-09 4e-09 1e-08 Ls 5e-09 Figure 5. Gate voltage (left) and current in the , 4e-09 Ls 5e-09 1e-09 8e-10 6e-10 4e-10 t 0 1e-09 2e-09 Ls 3e-09 4e-09 5e-09 , 0.5 2e-09 0.4 4e-09 6e-09 8e-09 t 5e-09 0.3 0.2 Ls Figure 9. Gate to ground ... | Original |
7 pages, |
AN-7019 6E10 4E-08 12V19 AN-7019 abstract |
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| Abstract: 2.00E-12 00E-12 3E-7 to 9E-7 251 Series: 5MHzAT Thermal Stability: -3CIC to +70C to -30C in 10C Steps •5e-09 ... | OCR Scan |
1 pages, |
251-1544 datasheet abstract |
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| Abstract: mm SPICE MACROMODELS TECHNOLOGY LM308A LM308A Macromodel Linear Technology LM308A LM308A op amp model Written: 08-23-1989 15:45:03 Type: Bipolar npn input, external comp. Typical specs: Vos=3.0E-04 0E-04, Ib=l.5E-09, Ios=2.0E-10 0E-10, GBP=6.0E+05Hz, Phase mar.= 70 deg, SR(+)=2.0E-0lV/us, SR(-)=1.9E-01V/US 9E-01V/US, Av= 110 dB, CMMR= 110 dB, Vsat(+)=1.00V, Vsat(-)=1.00V, Isc=+/~ 6.0mA, Iq= 300uA (input differential mode clamp active) * Connections: + - V+V-0 CaCb .subckt LM308A LM308A 3 2 7 4 6 18; Use C=30 pF in main circuit (Ca to ... | OCR Scan |
1 pages, |
LM308A 45E-02 332E 460E-12 0E-04 5E-09 0E-10 9E-01V/US LM308A abstract |
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| Abstract: urm SPICE MACROMODELS TECHNOLOGY LM308 LM308 Macromodel Linear Technology LM308 LM308 op amp model Written: 08-23-1989 15:46:51 Type: Bipolar npn input, external comp. Typical specs : Vos=2.0E-03 0E-03, Ib=l.5E-09, Ios=2.0E-10 0E-10, GBP=6.0E+05Hz, Phase raar.= 70 deg, SR{+)=2.OE-OlV/us, SR(-)=1.9E-01V/us, Av= 110 dB, CMMR= 100 dB, Vsat(+)=1.00V, Vsat{-)=1.00V, lsc=+/- 6.0mA, Iq= 300uA (input differential mode clamp active) * Connections .subckt LM308 LM308 * input + - V+V-0 CaCb 3 2 7 4 6 1 8 ; Use C=30 pF in main circuit (Ca to Cb). ... | OCR Scan |
1 pages, |
332E LM308 0E-03 5E-09 0E-10 LM308 abstract |
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| Abstract: 0.E+00 1.E+09 2.E+09 3.E+09 4.E+09 5.E+09 6.E+09 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 ... | Original |
3 pages, |
sensitivity dB photodiode pin 1550nm Photodiode 1550nm bandwidth LX3051 IR 2E09 diode 0 dB 1550nm 441-GHz 1550nm photodiode 5 Ghz 1310nm Receivers PIN photodiode responsivity 1550nm 1.1 LX3051 abstract |
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| Abstract: Vd + C C C C C 0 1 2 3 4 5 6 7 5e-09 4e-09 3e-09 , Ohm, Current rise time 6e-09 5e-09 Conclusion 4e-09 Controlling key parasitics in MOSFETs ... | Original |
5 pages, |
smd mosfet AN-7017 AN-7017 abstract |
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| Abstract: 2.E+09 3.E+09 4.E+09 5.E+09 6.E+09 7.E+09 i/p frequency (MHz) Figure 9 - ZL40804 ZL40804 , -4 0.E+00 1.E+09 2.E+09 3.E+09 4.E+09 5.E+09 6.E+09 i/p frequency (MHz) Figure ... | Original |
13 pages, |
ZL40804 OC48 OC192 5E-09 ZL40804 abstract |
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| Abstract: 4.E+09 5.E+09 6.E+09 7.E+09 i/p frequency (MHz) Figure 9 - ZL40804 ZL40804 Pout vs Input Frequency , 3.E+09 4.E+09 5.E+09 6.E+09 7.E+09 8.E+09 i/p frequency (MHz) Figure 10 - ZL40804 ZL40804 Pout ... | Original |
14 pages, |
ZL40804 OC48 OC192 ZL40804 abstract |
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| Abstract: , BW=4.41GHz Vr=-1V, BW=3.83GHz -4 -5 0.E+00 1.E+09 2.E+09 3.E+09 4.E+09 5.E+09 6.E+09 C (pF ... | Original |
4 pages, |
photodiode responsivity 1550nm 2 Photodiode 1550nm bandwidth 1550nm catv receiver LX3051 LX3051 abstract |
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| Models PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z * .SUBCKT PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z 1 2 3 * * housing parasitics LBlead 2 22 1.63E-09 63E-09 63E-09 63E-09 LE 3 333 3.77E-09 77E-09 77E-09 77E-09 LC 1 11 4.1E-10 1E-10 1E-10 1E-10 LBbond 22 222 2.5E-09 CBCG 222 11 1.76E-13 76E-13 76E-13 76E-13 CBEG 222 333 8.6E-14 6E-14 6E-14 6E-14 CCEG 11 333 1.76E-13 76E-13 76E-13 76E-13 * Q1 11 222 333 .6352 + MJC = 0.4041 + XCJC = 1 + TR = 5E-09 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.5 .MODEL www.datasheetarchive.com/files/philips/models/pbss5540z_4-v1.html |
Philips | 31/12/2001 | 3.81 Kb | HTML | pbss5540z_4-v1.html |
| * Forward Section D1 2 1 MDD1 TEMP=25 .MODEL MDD1 D IS=3.82624e-16 N=1 XTI=1 RS=0.2 + CJO=4e-11 TT=5e-09 * Leakage Current R 1 2 5.5e+09 MDR .MODEL MDR R TC1=0 TC2=0 * Breakdown RZ 2 3 0.0180001 D3 4 3 www.datasheetarchive.com/files/on_semiconductor/simulation-models/nup4103fc-single.sp3 |
On Semiconductor | 30/03/2009 | 0.95 Kb | SP3 | nup4103fc-single.sp3 |
| * Forward Section D1 2 1 MDD1 TEMP=25 .MODEL MDD1 D IS=3.82624e-16 N=1 XTI=1 RS=0.2 + CJO=4e-11 TT=5e-09 * Leakage Current R 1 2 5.5e+09 MDR .MODEL MDR R TC1=0 TC2=0 * Breakdown RZ 2 3 0.0180001 D3 4 3 www.datasheetarchive.com/files/on-semiconductor/pdf-docs/onsemi/nup4103fc-single.sp3.txt |
On Semiconductor | 11/08/2006 | 0.95 Kb | TXT | nup4103fc-single.sp3.txt |
| * Forward Section D1 2 1 MDD1 .MODEL MDD1 D IS=3.82624e-16 N=1 XTI=1 RS=0.2 + CJO=4e-11 TT=5e-09 * Leakage Current R 1 2 MDR 5.5e+09 .MODEL MDR RES TC1=0 TC2=0 * Breakdown RZ 2 3 0.0180001 D3 4 3 www.datasheetarchive.com/files/on-semiconductor/pdf-docs/onsemi/nup4103fc-single.lib |
On Semiconductor | 11/08/2006 | 0.93 Kb | LIB | nup4103fc-single.lib |
| Models PBSS5540Z/4 PBSS5540Z/4 PBSS5540Z/4 PBSS5540Z/4 model(s) PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z Simulation values * .SUBCKT PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z 1 2 3 4 * * housing parasitics LBlead 1 11 1.63E-09 63E-09 63E-09 63E-09 LE 3 33 3.77E-09 77E-09 77E-09 77E-09 LC 2 22 4.1E-10 1E-10 1E-10 1E-10 LBbond 11 111 2.5E-09 CBCG 22 111 1.76E-13 76E-13 76E-13 76E-13 CBEG 33 111 8.6E-14 6E-14 6E-14 6E-14 CCEG 22 33 1.76E-13 76E-13 76E-13 76E-13 * Q1 22 111 33 PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z .4041 + XCJC = 1 + TR = 5E-09 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.5 .MODEL DIODE D + IS = 3 www.datasheetarchive.com/files/philips/models/pbss5540z_4-v2.html |
Philips | 12/05/2005 | 2.52 Kb | HTML | pbss5540z_4-v2.html |
| Models PBSS5540Z/4 PBSS5540Z/4 PBSS5540Z/4 PBSS5540Z/4 model(s) PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z Simulation values * .SUBCKT PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z 1 2 3 * * housing parasitics LBlead 2 22 1.63E-09 63E-09 63E-09 63E-09 LE 3 333 3.77E-09 77E-09 77E-09 77E-09 LC 1 11 4.1E-10 1E-10 1E-10 1E-10 LBbond 22 222 2.5E-09 CBCG 222 11 1.76E-13 76E-13 76E-13 76E-13 CBEG 222 333 8.6E-14 6E-14 6E-14 6E-14 CCEG 11 333 1.76E-13 76E-13 76E-13 76E-13 * Q1 11 222 333 PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z + AREA = 1 D + TR = 5E-09 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.5 .MODEL DIODE D + IS = 3.695E-15 695E-15 695E-15 695E-15 + N www.datasheetarchive.com/files/philips/models/pbss5540z_4.html |
Philips | 23/04/2003 | 2.46 Kb | HTML | pbss5540z_4.html |
| * .SUBCKT PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z 1 2 3 4 * * housing parasitics LBlead 1 11 1.63E-09 63E-09 63E-09 63E-09 LE 3 33 3.77E-09 77E-09 77E-09 77E-09 LC 2 22 4.1E-10 1E-10 1E-10 1E-10 LBbond 11 111 2.5E-09 CBCG 22 111 1.76E-13 76E-13 76E-13 76E-13 CBEG 33 111 8.6E-14 6E-14 6E-14 6E-14 CCEG 22 33 1.76E-13 76E-13 76E-13 76E-13 * Q1 22 111 33 PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z + AREA = 1 D1 22 111 DIODE R1 2 4 0 * *The diode does not reflect a *physical device but improves *only modeling in the reverse *mode of operation. * .MODEL PBSS5540Z PBSS5540Z PBSS5540Z PBSS5540Z PNP -10 + VJC = 0.6352 + MJC = 0.4041 + XCJC = 1 + TR = 5E-09 + CJS = 0 + VJS = 0.75 + MJS = 0 www.datasheetarchive.com/files/spicemodels/misc/models/philips_smallsignaltransistors/bss5540z.prm |
Spice Models | 26/11/2003 | 1.08 Kb | PRM | bss5540z.prm |
| .0126436 N=1.45847 EG=1.03736 +XTI=5e-09 BV=200 IBV=8e-07 CJO=1.46059e-10 +VJ=0.571099 M=0.377134 FC=0.5 TT www.datasheetarchive.com/files/on_semiconductor/simulation-models/murs320t3.rev0.sp2 |
On Semiconductor | 30/03/2009 | 0.66 Kb | SP2 | murs320t3.rev0.sp2 |
| .3853 N=1.47436 EG=0.725098 +XTI=5e-09 BV=70 IBV=1e-05 CJO=1.48289e-12 +VJ=0.4 M=0.372039 FC=0.5 TT=6 www.datasheetarchive.com/files/on_semiconductor/simulation-models/bas70-04lt1g.lib |
On Semiconductor | 30/03/2009 | 0.66 Kb | LIB | bas70-04lt1g.lib |
| .0126436 N=1.45847 EG=1.03736 +XTI=5e-09 BV=200 IBV=8e-07 CJO=1.46059e-10 +VJ=0.571099 M=0.377134 FC=0.5 TT www.datasheetarchive.com/files/on_semiconductor/simulation-models/murs320t3.rev0.lib |
On Semiconductor | 30/03/2009 | 0.66 Kb | LIB | murs320t3.rev0.lib |