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Part Manufacturer Description Datasheet BUY
2N6193 Microsemi Corporation Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-39 visit Digikey
JANTX2N3749 Microsemi Corporation Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-59, Metal, 3 Pin visit Digikey
JANTX2N2880 Microsemi Corporation Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 Pin visit Digikey
JANTX2N6350 Microsemi Corporation Small Signal Bipolar Transistor, 5A I(C), 1-Element, NPN, Silicon, TO-33, TO-33, 4 PIN visit Digikey
JANTXV2N6350 Microsemi Corporation Small Signal Bipolar Transistor, 5A I(C), 1-Element, NPN, Silicon, TO-33, TO-33, 4 PIN visit Digikey
JAN2N3749 Microsemi Corporation Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin visit Digikey

5A transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SB852K Transistor, PNP, Darlington pair Features available In SMT3 (SMT, SC-59) package package marking: 2SB852K; U* where * is hFE code Darlington connection provides high DC current gain (hFE , TG3 Transistor, PNP, 2SB Series 2SB852K Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits , - Ta R R Fff » Transistor, PNP, 2SB Series 2SB852K 550 te u. Z ° 200 î/5 « 100 50 Ta - 25'C VCE = -5V 1 10 100 EMITTER -
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113 marking code PNP transistor 113 marking code transistor T146 transistor 2SB transistor PNP
Abstract: 2SD826 Ordering number : EN538F SANYO Semiconductors DATA SHEET 2SD826 NPN Epitaxial Planar Silicon Transistor 20V / 5A, Transistor for Flash Circuit Features · · · Low saturation voltage. High hFE. Large current capacity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO 60 V , Saturation Voltage, VCE(sat) - V 5 VCE=10V (Pulse) 7 100 ms ICP=8A (Pu IC=5A lse SANYO Electric
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EE16 DC-DC EE13 EE16 9V core EE16 60309E ITR09924
Abstract: unit) 2 axes/5kHz A (S-LINK unit) 4 axes/50kHz (C16,C32,T32, F32) 2 axes/100kHz (transistor , 4 points/6Hz to 4.8kHz (C16, C32, T32, F32) 2 points/12kHz/1000 resolution (transistor output , terminal-block type controller Body equipped with combined relay and transistor output Wide selection of , PWM output 2 axes/100kHz + 2 axes/20kHz (transistor output type) 4 points/12kHz/1000 resolution (transistor output type) 8 ch/50kHz Voltage/current input 2 ch/cassette Voltage/current output 2 Panasonic
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AFPE214325 FPG-PRT-S matsua stepping motors
Abstract: Sub-miniature Unsealed - Sub-miniature Unsealed - Sub-Miniature Unsealed - standard Reflective, Photo Transistor, Above 5mm Reflective, Photo Transistor, Above 5mm Slotted, Photo Transistor, slot width 3mm-5mm Slotted, Photo Transistor, slot width 3mm-5mm Slotted, Photo Transistor, slot width 3mm-5mm Slotted, Photo Transistor, slot width 3mm-5mm Slotted, Photo Transistor, slot width above 5mm Slotted, Photo Darlington , width up to 3mm Slotted, Photo Transistor, slot width up to 3mm Actuator Mounting Slotted, Photo OMRON
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A6T TRANSISTOR a6s transistor transistor a6t A6c transistor Photo Relays microswitches A16/M16 A165E A165K A165S/W EE-SX1018 EE-SX102
Abstract: XW - S D 8A/240V AC 5A/240V AC 1 2 8A/240V AC 5A/240V AC Time Ranges 10.5-265V AC/DC 1 S D 1 2 8A/240V AC 5A/240V AC D type only available with SPDT output , adjustment E Transistor output N Remote timer interrupt S Remote timer start H Operation Diagram 1 , /240V AC 5A/240V AC 1 LH XI - S S D 1 2 1 230 N1 XF - S D 8A/240V AC 5A/240V AC 1 2 8A/240V AC 5A/240V AC D type only available with SPDT output 10.5-265V -
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transistor 115 12v AC to DC CIRCUIT DIAGRAM ac and dc circuit diagram din rail multi-function timer D 400 transistor spdt 12v 1 sec relay datasheet 110/120V 220/240V
Abstract: NTE573â'1 RECTIFIERS NTE573â'2 class="hl">5 , _45.pdf NTE2682 NTE2683 Transistor , :// NTE2684 NTE Electronics
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NTE7239 NTE7232 pdf/ES-F8DB-14A464-A 201AD NTE639 214AA NTE644 NTE645 NTE7234
Abstract: Gesamt-Verlustleistung total power dissipation Tc= 25°C, Transistor Ptot 730 W VGES +/- 20V V , V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter , mJ - 4,1 - mJ Transistor / Transistor IC= 200A, VCC= 300V Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) VGE= ±15V, RG= 1,"¦, Tvj= 25°C td,on VGE= ±15V, RG= 1,"¦, Tvj= 125°C IC= 200A, VCC= 300V Anstiegszeit (induktive Last) rise time Eupec
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Abstract: TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS (T , (lc=0) Iebo Vbe=6V, IC=0 1 mA Collector Emitter Saturation Voltage : BU407 VcE(sat) lc=5A, lB=0.5A 1 V : BU407H lc=5A, Ib-0.8A 1 V Base Emitter Saturation Voltage : BU407 VÅ"(sat) lc=5A, IB"=0.5A 1.2 V : BU407H Ic=5A, Ib=0.8A 1.2 V Current Gain-Bandwidth Product fr Vce=10V, lc=0.5A 10 MHz Turn-Off Time : BU407 toff fc=5A, IB=0.5A 0.75 MS : BU407H lc=5A, lB=0.8A 0.4 H« SAMSUNG -
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T-33-11 BU806 BU807 darlington Vce-200V circuit of samsung CRT C 3311 transistor bu806 equivalent samsung crt BU806..807 BU407/407H BU806/807
Abstract: UNISONIC TECHNOLOGIES CO., LTD BTC1510F3 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general , ® NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C) PARAMETER SYMBOL RATINGS UNIT VCBO , =5mA, IB=0 VCE=3V, IC=5A VCE=3V, IC=10A IC=5A VCB=150V, IE=0 VCE=150V, IE=0 VEB=5V, IC=0 MIN 150 , V V ON CHARACTERISTICS VCE=3V, IC=5A VCE=3V, IC=10A Base-Emitter Saturation Voltage(Note Unisonic Technologies
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BTC1510F3L-TN3-R BTC1510F3G-TN3-R BTC1510F3L-TQ2-T BTC1510F3G-TQ2-T BTC1510F3L-TQ2-R BTC1510F3G-TQ2-R
Abstract: NIKO-SEM P2103NV N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 PRODUCT , Transistor SOP-8 VDS = 0V, VGS = ±20V N-Ch ±100 VDS = 0V, VGS = ±20V P-Ch ±100 VDS = , -10V VGS = 4.5V, ID = 6A Drain-Source Resistance1 On-State VGS = -4.5V, ID = -5A RDS(ON , N-Ch 28 P-Channel P-Ch 6 VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch 12 ID = -5A , VDS = 10V, ID = 5A VDS = -10V, ID = -5A S DYNAMIC Input Capacitance Ciss Output Niko Semiconductor
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nikos niko-sem p2103n OCT-22-2003
Abstract: 2DI200A-050 (200A) FUJI POWER TRANSISTOR MODULE : : Outline Drawings POWER TRANSISTOR , DC 1ms DC DC 1ms one Transistor two Transistor AC.1min : Equivalent , Conditions ICBO = 2mA ICEO = 2mA IC = 2A IC=200A IB=-±5A IEBO = 600mA VCBO = 600V VEBO = 10V -IC = 200A IC = 200A, VCE = 5V IC = 200A, IB = 5A Min. Typ. Max. 600 600 450 450 10 - 2.0 600 1.8 80 2.0 2.5 2.0 12.0 3.0 0.6 IC = 200A IB1 = +5A IB2 = -5A -Ic=200A,VBE -
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2DI200A050 SCHEMATIC servo dc welding inverter 200A E82988
Abstract: NIKO-SEM P2103NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP , Enhancement Mode Field Effect Transistor SOP-8 Lead-Free VDS = 0V, VGS = ±20V N-Ch ±100 VDS = , Resistance VGS = -4.5V, ID = -5A N-Ch 28 P-Ch -24 A N-Ch 21 32 P-Ch 44 60 , , N-Ch 12 ID = -5A P-Ch 12 VGS = -10V, ID = -6A 1 uA RDS(ON) VGS = 10V, ID = 7A Forward Transconductance gfs nA VDS = 10V, ID = 5A VDS = -10V, ID = -5A S DYNAMIC Input Niko Semiconductor
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MAY-21-2004
Abstract: approximately 50mA for a 5A load. Most of this current is drive current for the NPN output transistor. This , Advanced Monolithic Systems AMS1505V 5A ULTRA LOW DROPOUT VOLTAGE REGULATORS FEATURES , 5A · Low Dropout, 350mV max. at 5A Output Current · Fast Transient Response · Remote Sense · , series of adjustable and fixed low dropout voltage regulators provide 5A output current to power the new , load regulation, measured at the Sense pin, for a load current step of 100mA to 5A is less than 1mV Advanced Monolithic Systems
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ams1505c AMS1505CMV AMS1505CTV 042192R1
Abstract: Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-66H q IC , Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING , , IC = 400A, VGE = ±15V RG(on) = "¦, Tj = 125°C, Ls = 100nH Inductive load VCC = 1650V, IC = 400A, VGE = ±15V RG(off) = "¦, Tj = 125°C, Ls = 100nH Inductive load VCC = 1650V, IC = 400A, VGE -
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Abstract: UNISONIC TECHNOLOGIES CO., LTD BTC1510F3 Preliminary NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for , Packing Tape Reel Tube 1 of 3 QW-R223-002.a BTC1510F3 Preliminary NPN SILICON TRANSISTOR , -002.a BTC1510F3 Preliminary NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C) PARAMETER , =0 VCE=3V, IC=5A VCE=3V, IC=10A IC=5A VCB=150V, IE=0 VCE=150V, IE=0 VEB=5V, IC=0 VCE=3V, IC=5A Unisonic Technologies
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transistor equivalent UTC btc1510f3l BTC1510F3L BTC1510F3G BTC1510F3-TQ2-R BTC1510F3-TQ2-T
Abstract: UNISONIC TECHNOLOGIES CO., LTD BTC1510F3 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general , BTC1510F3  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified , SYMBOL TEST CONDITIONS BVCBO IC=100ÂuA, IE=0 BVCEO IC=5mA, IB=0 VCE=3V, IC=5A VBE(ON) VCE=3V, IC=10A IC=5A VFEC ICBO VCB=150V, IE=0 ICEO VCE=150V, IE=0 IEBO VEB=5V, IC=0 MIN 150 150 TYP Unisonic Technologies
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BTC1510F3L-TA3-T BTC1510F3G-TA3-T BTC1510F3L-TF3-T BTC1510F3G-TF3-T BTC1510F3L-TF1-T BTC1510F3G-TF1-T
Abstract: Transistor Color 2SC5339 Horizontal Deflection Output Power Transistor Color 2SC5386 Horizontal Deflection Output Power Transistor Color 2SC5387 Horizontal Deflection Output Power Transistor Color 2SC5404 Horizontal Deflection Output Power Transistor Color 2SC5411 Horizontal Deflection Output Power Transistor Color 2SC5421 Horizontal Deflection Output Power Transistor Color 2SC5422 Horizontal Deflection Output Power Transistor Color 2SC5445 Horizontal Deflection Output Power Transistor Color -
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2SC5446 2SC5570 2SC5855 2SC5856 2SC5858 TV power transistor datasheet power transistor 2SD2599 equivalent transistor 2sd2499 2Sc5858 equivalent transistor 2SC5280 2SC5587 2SC5588 2SC5589
Abstract: FP-X C14T 100 bis 240VAC 8 Eingänge 24VDC, 6 Transistor Ausgänge 0,5A, 5 - 24VDC (NPN) 16k Schritte 2 NV AFPXC14T FP-X C14TD 24VDC 8 Eingänge 24VDC, 6 Transistor Ausgänge 0,5A, 5 - , , 6 Transistor Ausgänge 0,5A, 24VDC (PNP) 16k Schritte 2 NV AFPXC14P FP-X C14PD Transistorausgang FP-X C60R FP-X C60RD 24VDC 8 Eingänge 24VDC, 6 Transistor Ausgänge 0,5A, 24VDC (PNP , Transistor Ausgänge 0,5A, 5 - 24VDC (NPN) 32k Schritte 2 V AFPXC30T FP-X C30TD 24VDC 16 Panasonic
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AFC8513 afpxc30pd E30R 60870-5-104 FP0-E32RS fp-x c14r CH-6343
Abstract: UNISONIC TECHNOLOGIES CO., LTD BTC1510F3 Preliminary NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed , 3 QW-R223-002. b BTC1510F3  Preliminary NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM , CONDITIONS IC=100ÂuA, IE=0 IC=1mA, IB=0 VCE=3V, IC=5A VCE=3V, IC=10A IC=5A VCB=150V, IE=0 VCE=150V, IE , 20 K 2 1.5 3 2 V V ON CHARACTERISTICS VCE=3V, IC=5A VCE=3V, IC=10A Base-Emitter Unisonic Technologies
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BTC1510F3L-TN3-T BTC1510F3G-TN3-T
Abstract: approximately 50mA for a 5A load. Most of this current is drive current for the NPN output transistor. This , Advanced Monolithic Systems AMS1505V 5A ULTRA LOW DROPOUT VOLTAGE REGULATORS RoHS , 5.0V · Output Current of 5A · Low Dropout, 350mV max. at 5A Output Current · Fast Transient Response , critical, the AMS1505V series of adjustable and fixed low dropout voltage regulators provide 5A output , of 100mA to 5A is less than 1mV. The AMS1505V series has fast transient response. To further improve Advanced Monolithic Systems
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