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Part Manufacturer Description Datasheet BUY
UCC27533DBVR Texas Instruments 2.5A/5A 35Vmax VDD Single Channel Driver For IGBT and Power MOSFET 5-SOT-23 -40 to 140 visit Texas Instruments Buy
UCC27533DBVT Texas Instruments 2.5A/5A 35Vmax VDD Single Channel Driver For IGBT and Power MOSFET 5-SOT-23 -40 to 140 visit Texas Instruments
UCC27524DSDT Texas Instruments Dual, 5A, High-Speed Low-Side Power MOSFET Driver 8-SON -40 to 140 visit Texas Instruments
UCC27526DSDR Texas Instruments Dual, 5A, High-Speed Low-Side Power MOSFET Driver 8-SON -40 to 140 visit Texas Instruments Buy
UCC27525DGNT Texas Instruments 5A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8, PLASTIC, MSOP-8 visit Texas Instruments
UCC27523DSDR Texas Instruments Dual, 5A, High-Speed Low-Side Power MOSFET Driver 8-SON -40 to 140 visit Texas Instruments

5A transistor

Catalog Datasheet MFG & Type PDF Document Tags

113 marking code PNP transistor

Abstract: 113 marking code transistor 2SB852K Transistor, PNP, Darlington pair Features available In SMT3 (SMT, SC-59) package package marking: 2SB852K; U* where * is hFE code Darlington connection provides high DC current gain (hFE , TG3 Transistor, PNP, 2SB Series 2SB852K Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits , - Ta R R Fff » Transistor, PNP, 2SB Series 2SB852K 550 te u. Z ° 200 î/5 « 100 50 Ta - 25'C VCE = -5V 1 10 100 EMITTER
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113 marking code PNP transistor 113 marking code transistor transistor 2SB T146 transistor PNP

EE16

Abstract: 5A transistor 2SD826 Ordering number : EN538F SANYO Semiconductors DATA SHEET 2SD826 NPN Epitaxial Planar Silicon Transistor 20V / 5A, Transistor for Flash Circuit Features · · · Low saturation voltage. High hFE. Large current capacity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO 60 V , Saturation Voltage, VCE(sat) - V 5 VCE=10V (Pulse) 7 100 ms ICP=8A (Pu IC=5A lse
SANYO Electric
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EE16 5A transistor EE16 9V 60309E DC-DC EE13 ITR09924

AFPE214325

Abstract: FPG-PRT-S unit) 2 axes/5kHz A (S-LINK unit) 4 axes/50kHz (C16,C32,T32, F32) 2 axes/100kHz (transistor , 4 points/6Hz to 4.8kHz (C16, C32, T32, F32) 2 points/12kHz/1000 resolution (transistor output , terminal-block type controller Body equipped with combined relay and transistor output Wide selection of , PWM output 2 axes/100kHz + 2 axes/20kHz (transistor output type) 4 points/12kHz/1000 resolution (transistor output type) 8 ch/50kHz Voltage/current input 2 ch/cassette Voltage/current output 2
Panasonic
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AFPE214325 FPG-PRT-S matsua stepping motors

A6T TRANSISTOR

Abstract: a6s transistor Sub-miniature Unsealed - Sub-miniature Unsealed - Sub-Miniature Unsealed - standard Reflective, Photo Transistor, Above 5mm Reflective, Photo Transistor, Above 5mm Slotted, Photo Transistor, slot width 3mm-5mm Slotted, Photo Transistor, slot width 3mm-5mm Slotted, Photo Transistor, slot width 3mm-5mm Slotted, Photo Transistor, slot width 3mm-5mm Slotted, Photo Transistor, slot width above 5mm Slotted, Photo Darlington , width up to 3mm Slotted, Photo Transistor, slot width up to 3mm Actuator Mounting Slotted, Photo
OMRON
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A6T TRANSISTOR a6s transistor transistor a6t A6c transistor microswitches Photo Relays A16/M16 A165E A165K A165S/W EE-SX1018 EE-SX102

transistor 115

Abstract: 12v AC to DC CIRCUIT DIAGRAM XW - S D 8A/240V AC 5A/240V AC 1 2 8A/240V AC 5A/240V AC Time Ranges 10.5-265V AC/DC 1 S D 1 2 8A/240V AC 5A/240V AC D type only available with SPDT output , adjustment E Transistor output N Remote timer interrupt S Remote timer start H Operation Diagram 1 , /240V AC 5A/240V AC 1 LH XI - S S D 1 2 1 230 N1 XF - S D 8A/240V AC 5A/240V AC 1 2 8A/240V AC 5A/240V AC D type only available with SPDT output 10.5-265V
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transistor 115 12v AC to DC CIRCUIT DIAGRAM ac and dc circuit diagram D 400 transistor din rail multi-function timer 8A DPDT RELAY 220 110/120V 220/240V

NTE7239

Abstract: pdf/ES-F8DB-14A464-A NTE573â'1 RECTIFIERS NTE573â'2 class="hl">5 , _45.pdf NTE2682 NTE2683 Transistor , :// NTE2684
NTE Electronics
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NTE7239 pdf/ES-F8DB-14A464-A NTE7232 201AD NTE639 214AA NTE644 NTE645 NTE7234
Abstract: Gesamt-Verlustleistung total power dissipation Tc= 25°C, Transistor Ptot 730 W VGES +/- 20V V , V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter , mJ - 4,1 - mJ Transistor / Transistor IC= 200A, VCC= 300V Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) VGE= ±15V, RG= 1,"¦, Tvj= 25°C td,on VGE= ±15V, RG= 1,"¦, Tvj= 125°C IC= 200A, VCC= 300V Anstiegszeit (induktive Last) rise time Eupec
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darlington Vce-200V

Abstract: circuit of samsung CRT TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS (T , (lc=0) Iebo Vbe=6V, IC=0 1 mA Collector Emitter Saturation Voltage : BU407 VcE(sat) lc=5A, lB=0.5A 1 V : BU407H lc=5A, Ib-0.8A 1 V Base Emitter Saturation Voltage : BU407 VÅ"(sat) lc=5A, IB"=0.5A 1.2 V : BU407H Ic=5A, Ib=0.8A 1.2 V Current Gain-Bandwidth Product fr Vce=10V, lc=0.5A 10 MHz Turn-Off Time : BU407 toff fc=5A, IB=0.5A 0.75 MS : BU407H lc=5A, lB=0.8A 0.4 H« SAMSUNG
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T-33-11 BU806 BU807 darlington Vce-200V circuit of samsung CRT bu806 equivalent C 3311 transistor samsung crt BU806..807 BU407/407H BU806/807
Abstract: UNISONIC TECHNOLOGIES CO., LTD BTC1510F3 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general , ® NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C) PARAMETER SYMBOL RATINGS UNIT VCBO , =5mA, IB=0 VCE=3V, IC=5A VCE=3V, IC=10A IC=5A VCB=150V, IE=0 VCE=150V, IE=0 VEB=5V, IC=0 MIN 150 , V V ON CHARACTERISTICS VCE=3V, IC=5A VCE=3V, IC=10A Base-Emitter Saturation Voltage(Note Unisonic Technologies
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BTC1510F3L-TN3-R BTC1510F3G-TN3-R BTC1510F3L-TQ2-T BTC1510F3G-TQ2-T BTC1510F3L-TQ2-R BTC1510F3G-TQ2-R

P2103NV

Abstract: nikos NIKO-SEM P2103NV N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 PRODUCT , Transistor SOP-8 VDS = 0V, VGS = ±20V N-Ch ±100 VDS = 0V, VGS = ±20V P-Ch ±100 VDS = , -10V VGS = 4.5V, ID = 6A Drain-Source Resistance1 On-State VGS = -4.5V, ID = -5A RDS(ON , N-Ch 28 P-Channel P-Ch 6 VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch 12 ID = -5A , VDS = 10V, ID = 5A VDS = -10V, ID = -5A S DYNAMIC Input Capacitance Ciss Output
Niko Semiconductor
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nikos niko-sem p2103n OCT-22-2003

2DI200A-050

Abstract: SCHEMATIC servo dc 2DI200A-050 (200A) FUJI POWER TRANSISTOR MODULE : : Outline Drawings POWER TRANSISTOR , DC 1ms DC DC 1ms one Transistor two Transistor AC.1min : Equivalent , Conditions ICBO = 2mA ICEO = 2mA IC = 2A IC=200A IB=-±5A IEBO = 600mA VCBO = 600V VEBO = 10V -IC = 200A IC = 200A, VCE = 5V IC = 200A, IB = 5A Min. Typ. Max. 600 600 450 450 10 - 2.0 600 1.8 80 2.0 2.5 2.0 12.0 3.0 0.6 IC = 200A IB1 = +5A IB2 = -5A -Ic=200A,VBE
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SCHEMATIC servo dc welding inverter 200A 2DI200A050 E82988

P2103NVG

Abstract: P2103NV NIKO-SEM P2103NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP , Enhancement Mode Field Effect Transistor SOP-8 Lead-Free VDS = 0V, VGS = ±20V N-Ch ±100 VDS = , Resistance VGS = -4.5V, ID = -5A N-Ch 28 P-Ch -24 A N-Ch 21 32 P-Ch 44 60 , , N-Ch 12 ID = -5A P-Ch 12 VGS = -10V, ID = -6A 1 µA RDS(ON) VGS = 10V, ID = 7A Forward Transconductance gfs nA VDS = 10V, ID = 5A VDS = -10V, ID = -5A S DYNAMIC Input
Niko Semiconductor
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P-Channel Enhancement Mode Field Effect Transistor MAY-21-2004

AMS1505CMV

Abstract: AMS1505CTV approximately 50mA for a 5A load. Most of this current is drive current for the NPN output transistor. This , Advanced Monolithic Systems AMS1505V 5A ULTRA LOW DROPOUT VOLTAGE REGULATORS FEATURES , 5A · Low Dropout, 350mV max. at 5A Output Current · Fast Transient Response · Remote Sense · , series of adjustable and fixed low dropout voltage regulators provide 5A output current to power the new , load regulation, measured at the Sense pin, for a load current step of 100mA to 5A is less than 1mV
Advanced Monolithic Systems
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AMS1505CMV AMS1505CTV ams1505c 042192R1
Abstract: Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-66H q IC , Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING , , IC = 400A, VGE = ±15V RG(on) = "¦, Tj = 125°C, Ls = 100nH Inductive load VCC = 1650V, IC = 400A, VGE = ±15V RG(off) = "¦, Tj = 125°C, Ls = 100nH Inductive load VCC = 1650V, IC = 400A, VGE -
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transistor equivalent

Abstract: UTC btc1510f3l UNISONIC TECHNOLOGIES CO., LTD BTC1510F3 Preliminary NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for , Packing Tape Reel Tube 1 of 3 QW-R223-002.a BTC1510F3 Preliminary NPN SILICON TRANSISTOR , -002.a BTC1510F3 Preliminary NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C) PARAMETER , =0 VCE=3V, IC=5A VCE=3V, IC=10A IC=5A VCB=150V, IE=0 VCE=150V, IE=0 VEB=5V, IC=0 VCE=3V, IC=5A
Unisonic Technologies
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transistor equivalent UTC btc1510f3l BTC1510F3L BTC1510F3G BTC1510F3-TQ2-R BTC1510F3-TQ2-T
Abstract: UNISONIC TECHNOLOGIES CO., LTD BTC1510F3 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general , BTC1510F3  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified , SYMBOL TEST CONDITIONS BVCBO IC=100µA, IE=0 BVCEO IC=5mA, IB=0 VCE=3V, IC=5A VBE(ON) VCE=3V, IC=10A IC=5A VFEC ICBO VCB=150V, IE=0 ICEO VCE=150V, IE=0 IEBO VEB=5V, IC=0 MIN 150 150 TYP Unisonic Technologies
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BTC1510F3L-TA3-T BTC1510F3G-TA3-T BTC1510F3L-TF3-T BTC1510F3G-TF3-T BTC1510F3L-TF1-T BTC1510F3G-TF1-T

TV power transistor datasheet

Abstract: power transistor Transistor Color 2SC5339 Horizontal Deflection Output Power Transistor Color 2SC5386 Horizontal Deflection Output Power Transistor Color 2SC5387 Horizontal Deflection Output Power Transistor Color 2SC5404 Horizontal Deflection Output Power Transistor Color 2SC5411 Horizontal Deflection Output Power Transistor Color 2SC5421 Horizontal Deflection Output Power Transistor Color 2SC5422 Horizontal Deflection Output Power Transistor Color 2SC5445 Horizontal Deflection Output Power Transistor Color
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2SC5446 2SC5570 2SC5855 2SC5856 2SC5858 TV power transistor datasheet power transistor 2SD2599 equivalent transistor 2sd2499 2Sc5858 equivalent transistor 2SC5280 2SC5587 2SC5588 2SC5589

AFC8513

Abstract: E30R FP-X C14T 100 bis 240VAC 8 Eingänge 24VDC, 6 Transistor Ausgänge 0,5A, 5 - 24VDC (NPN) 16k Schritte 2 NV AFPXC14T FP-X C14TD 24VDC 8 Eingänge 24VDC, 6 Transistor Ausgänge 0,5A, 5 - , , 6 Transistor Ausgänge 0,5A, 24VDC (PNP) 16k Schritte 2 NV AFPXC14P FP-X C14PD Transistorausgang FP-X C60R FP-X C60RD 24VDC 8 Eingänge 24VDC, 6 Transistor Ausgänge 0,5A, 24VDC (PNP , Transistor Ausgänge 0,5A, 5 - 24VDC (NPN) 32k Schritte 2 V AFPXC30T FP-X C30TD 24VDC 16
Panasonic
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AFC8513 E30R afpxc30pd 60870-5-104 FP0-E32RS FP0E32RS CH-6343
Abstract: UNISONIC TECHNOLOGIES CO., LTD BTC1510F3 Preliminary NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed , 3 QW-R223-002. b BTC1510F3  Preliminary NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM , CONDITIONS IC=100µA, IE=0 IC=1mA, IB=0 VCE=3V, IC=5A VCE=3V, IC=10A IC=5A VCB=150V, IE=0 VCE=150V, IE , 20 K 2 1.5 3 2 V V ON CHARACTERISTICS VCE=3V, IC=5A VCE=3V, IC=10A Base-Emitter Unisonic Technologies
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BTC1510F3L-TN3-T BTC1510F3G-TN3-T

AMS1505CMV

Abstract: AMS1505CTV approximately 50mA for a 5A load. Most of this current is drive current for the NPN output transistor. This , Advanced Monolithic Systems AMS1505V 5A ULTRA LOW DROPOUT VOLTAGE REGULATORS RoHS , 5.0V · Output Current of 5A · Low Dropout, 350mV max. at 5A Output Current · Fast Transient Response , critical, the AMS1505V series of adjustable and fixed low dropout voltage regulators provide 5A output , of 100mA to 5A is less than 1mV. The AMS1505V series has fast transient response. To further improve
Advanced Monolithic Systems
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