NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| MC33931EK | Freescale Semiconductor | 5A H-BRIDGE | 
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| MC33931EKR2 | Freescale Semiconductor | 5A H-BRIDGE |
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| LM5113TME/NOPB | Texas Instruments | 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA |
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FREE
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| SM72482MA-4/NOPB | Texas Instruments | SolarMagic Dual 5A Compound Gate Driver 8-SOIC -40 to 125 |
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FREE
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| LM5113TMX/NOPB | Texas Instruments | 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SD826 2SD826 Ordering number : EN538F EN538F SANYO Semiconductors DATA SHEET 2SD826 2SD826 NPN Epitaxial Planar Silicon Transistor 20V / 5A, Transistor for Flash Circuit Features · · · Low saturation voltage. High hFE. Large current capacity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO , ) 7 100 ms ICP=8A (Pu IC=5A lse) 2 DC 1.0 op era 7 5 tio n ... | Original |
6 pages, |
ITR09923 EE16 case core EE16 2SD826 ITR09924 EE16 DC-DC EE13 EN538F EN538F abstract |
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| Abstract: BU407/407H BU407/407H NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL , ) IC = 5A, IB = 0.5A 1 V IC = 5A, IB = 0.8A 1 V IC = 5A, IB = 0.5A 1.2 V IC = 5A, IB = 0.8A 1.2 ICES Test Conditions Min Collector Emitter Saturation Voltage , Gain- Bandwidth Product fT VCE = 10V, IC = 0.5A Turn-off Time toff IC = 5A, IB = 0.5A 0.75 uS IC = 5A, IB = 0.8A 0.4 uS : BU407 BU407 : BU407H BU407H 10 BU407/407H BU407/407H NPN ... | Original |
2 pages, |
transistor Vbe 1 BU407 transistor 407H npn switching transistor Ic 5A 200V transistor npn 5a BU407/407H BU407/407H abstract |
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| Abstract: 2DI200M-050 2DI200M-050 (200A) FUJI POWER TRANSISTOR MODULE : : Outline Drawings POWER TRANSISTOR , specified) Item DC 1ms DC DC 1ms one Transistor two Transistor AC.1min , , VCE = 5V IC = 200A, IB = 5A Typ. Max. 10 600 600 450 - 2.0 400 1.8 2000 Units V V V V V mA mA V 2.5 3.0 6.0 8.0 2.0 IC = 200A IB1 = +5A IB2 = -5A V V , (c-f) Test Conditions Transistor Diode With Thermal Compound Min. Typ. 0.156 0.5 0.03 ... | Original |
3 pages, |
power transistor M210 transistor servo drive dc servo drive schematic 2DI200M-050 welding inverter 200A 2DI200M-050 abstract |
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| Abstract: ,5 up to 16A) . The status is given with an open collector transistor and a red LED. The current , transistor ( load connected to 24V) -Max output voltage ( OFF) -maximum output current ( Vs , : t Ieff0,5A Ieff0,5A Ieff0,5A 0,707A t Is ... | Original |
1 pages, |
ECD05000 TRANSISTOR 707 24v, 5A transformer S/ACC/ECD05000/A/03/05/2000 ECD05200 S/ACC/ECD05000/A/03/05/2000 abstract |
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| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 2000(Min)@ IC= -5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -5A ·Complement to Type 2SD1192 2SD1192 APPLICATIONS , Semiconductor isc Silicon PNP Darlington Power Transistor 2SB882 2SB882 ELECTRICAL CHARACTERISTICS TC=25 , VCE(sat) Collector-Emitter Saturation Voltage IC= -5A, IB= -10mA -1.5 V VBE(sat ... | Original |
2 pages, |
2SD1192 2sb882 datasheet transistor b 40 Ic-5A 2sb882 2SB882 2SB882 abstract |
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| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5149 2SC5149 , Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5149 2SC5149 ELECTRICAL , Voltage IC= 5A; IB= 1.3A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.3A , ; VCE= 5V w. w w 5 UNIT IC= 5A ; VCE= 5V .cn i IF= 5A IC= 0.1A ; VCE= 10V , ICP= 5A, IB1(end)= 1.1A ; fH= 31.5kHz tf Fall Time isc Websitewww.iscsemi.cn 2 isc ... | Original |
3 pages, |
transistor npn high speed switching npn power transistor ic 400ma TV power transistor datasheet 2SC5149 2SC5149 abstract |
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| Abstract: UNISONIC TECHNOLOGIES CO., LTD BTC1510F3 BTC1510F3 Preliminary NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 BTC1510F3 is designed for , Packing Tape Reel Tube 1 of 3 QW-R223-002 QW-R223-002.a BTC1510F3 BTC1510F3 Preliminary NPN SILICON TRANSISTOR , BTC1510F3 BTC1510F3 Preliminary NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C) PARAMETER , VCE=3V, IC=5A VCE=3V, IC=10A IC=5A VCB=150V, IE=0 VCE=150V, IE=0 VEB=5V, IC=0 VCE=3V, IC=5A ... | Original |
3 pages, |
BTC1510F3 BTC1510F3 abstract |
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| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4757 2SC4757 , Semiconductor isc Silicon NPN Power Transistor 2SC4757 2SC4757 ELECTRICAL CHARACTERISTICS TC=25 unless , 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A 1.5 V ICBO Collector Cutoff Current VCB= , DC Current Gain hFE-2 DC Current Gain sem isc fT COB CONDITIONS IC= 5A ; VCE= ... | Original |
4 pages, |
transistor npn high speed switching transistor Ic 1A datasheet NPN transistor NPN Transistor 1500V transistor Ic 1A NPN NPN Transistor 5A npn switching transistor Ic 5A 2SC4757 2SC4757 abstract |
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| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4237 2SC4237 , Silicon NPN Power Transistor 2SC4237 2SC4237 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified , Voltage IC= 0.2A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V ICBO Collector , IC= 5A ; VCE= 5V hFE-2 DC Current Gain fT Switching times w w ton Turn-on Time ... | Original |
4 pages, |
transistor Ic 1A NPN transistor power TRANSISTOR 800V 5A npn switching transistor Ic 5A transistor Ic 1A datasheet NPN transistor 800V 1A 2SC4237 TV power transistor datasheet transistor 2sc4237 2SC4237 abstract |
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| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3300 2SC3300 , (sat)= 0.5V(Max)@ IC= 5A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter , INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3300 2SC3300 ELECTRICAL CHARACTERISTICS TC=25 , 25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 80mA 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 80mA 1.2 V ICBO Collector Cutoff ... | Original |
2 pages, |
INVERTER 1A 12V transistor 12v 1A NPN transistor 2sc3300 2SC3300 2SC3300 abstract |
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| Specifications for Low Power NPN Transistors Specifications for Low Power NPN Transistors ESA/SCC Doc. or Spec. # Iss. Rev. Specification Title 5201/001 5 A Transistors Low Power NPN, based on type 2N2484 2N2484 2N2484 2N2484 5201/002 4 A Transistors Low Power NPN, based on type 2N2222A 2N2222A 2N2222A 2N2222A 5201/002 4 A Transistors Low Power NPN, based on type 2N2222A 2N2222A 2N2222A 2N2222A 5201 www.datasheetarchive.com/files/stmicroelectronics/stonline/products/space/specs/lpnpn.htm |
STMicroelectronics | 14/06/1999 | 2.31 Kb | HTM | lpnpn.htm |
| 2515E 2515E 2515E 2515E - 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2515M PBSS2515M PBSS2515M PBSS2515M - 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M PBSS2540M PBSS2540M PBSS2540M - 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS4520X PBSS4520X PBSS4520X PBSS4520X - 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4540X PBSS4540X PBSS4540X PBSS4540X - 40 V, 5 A NPN low VCEsat (BISS) transistor www.datasheetarchive.com/files/philips/catalog/listing/47308.html |
Philips | 01/06/2005 | 11.6 Kb | HTML | 47308.html |
| PBSS3515E PBSS3515E PBSS3515E PBSS3515E - 15 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3515M PBSS3515M PBSS3515M PBSS3515M - 15 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3540M PBSS3540M PBSS3540M PBSS3540M - 40 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS5520X PBSS5520X PBSS5520X PBSS5520X - 20 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X PBSS5540X PBSS5540X PBSS5540X - 40 V, 5 A PNP low VCEsat (BISS) transistor www.datasheetarchive.com/files/philips/catalog/listing/47320.html |
Philips | 01/06/2005 | 11.59 Kb | HTML | 47320.html |
| ST | N-CHANNEL 200V - 7 OHM - 5A - TO-251/TO-252 POWER MOS TRANSISTORS Datasheet N-CHANNEL 200V - 7 OHM - 5A - TO-251/TO-252 POWER MOS TRANSISTORS STD5N20 STD5N20 STD5N20 STD5N20 Document Format Size Document Number Date Update Pages Portable Document Format 3093 29/03/1999 10 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/3093-v3.htm |
STMicroelectronics | 20/10/2000 | 2.9 Kb | HTM | 3093-v3.htm |
| ST | N-CHANNEL 200V - 7 OHM - 5A - TO-251/TO-252 POWER MOS TRANSISTORS Datasheet N-CHANNEL 200V - 7 OHM - 5A - TO-251/TO-252 POWER MOS TRANSISTORS STD5N20 STD5N20 STD5N20 STD5N20 Document Format Size Document Number Date Update Pages Portable Document Format 3093 29/03/1999 10 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/3093-v4.htm |
STMicroelectronics | 25/05/2000 | 2.85 Kb | HTM | 3093-v4.htm |
| 2515E 2515E 2515E 2515E - 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2515M PBSS2515M PBSS2515M PBSS2515M - 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M PBSS2540M PBSS2540M PBSS2540M - 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS4520X PBSS4520X PBSS4520X PBSS4520X - 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4540X PBSS4540X PBSS4540X PBSS4540X - 40 V, 5 A NPN low VCEsat (BISS) transistor www.datasheetarchive.com/files/philips/catalog/listing/47305.html |
Philips | 01/06/2005 | 17.9 Kb | HTML | 47305.html |
| PBSS3515E PBSS3515E PBSS3515E PBSS3515E - 15 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3515M PBSS3515M PBSS3515M PBSS3515M - 15 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3540M PBSS3540M PBSS3540M PBSS3540M - 40 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS5520X PBSS5520X PBSS5520X PBSS5520X - 20 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X PBSS5540X PBSS5540X PBSS5540X - 40 V, 5 A PNP low VCEsat (BISS) transistor www.datasheetarchive.com/files/philips/catalog/listing/47307.html |
Philips | 01/06/2005 | 17.5 Kb | HTML | 47307.html |
| ST | N-CHANNEL 200V - 7 OHM - 5A - TO-251/TO-252 POWER MOS TRANSISTORS STD5N20 STD5N20 STD5N20 STD5N20 N-CHANNEL 200V - 7 OHM - 5A - TO-251/TO-252 POWER MOS TRANSISTORS Document Number: 3093 Date Update: 29/03/99 Pages: 10 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/3093-v2.htm |
STMicroelectronics | 14/06/1999 | 0.9 Kb | HTM | 3093-v2.htm |
| ST | N-CHANNEL 200V - 7 OHM - 5A - TO-251/TO-252 POWER MOS TRANSISTORS STD5N20 STD5N20 STD5N20 STD5N20 N-CHANNEL 200V - 7 OHM - 5A - TO-251/TO-252 POWER MOS TRANSISTORS Document Number: 3093 Date Update: 29/03/99 Pages: 10 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/3093-v1.htm |
STMicroelectronics | 31/03/1999 | 0.93 Kb | HTM | 3093-v1.htm |
| 5520X 5520X 5520X 5520X; 20 V, 5 A PNP low VCEsat (BISS) transistor General info PNP low V CEsat (BISS) transistor in a SOT89 (SC-62 SC-62 SC-62 SC-62) plastic package. NPN 5520X 5520X 5520X 5520X 20 V, 5 A PNP low VCEsat (BISS) transistor 8-11-2004 Product Specification 13.0 106.3 Support Breakthrough in Small-Signal; Low VCEsat (BISS) transistors (2003 High collector current I C : 5 A High efficiency leading to less heat generation www.datasheetarchive.com/files/philips/pip/pbss5520x_2.html |
Philips | 06/06/2005 | 4.28 Kb | HTML | pbss5520x_2.html |