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Part Manufacturer Description Datasheet BUY
TAN500 Microsemi Corporation RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, CASE 55ST, 2 PIN visit Digikey Buy
DME800 Microsemi Corporation RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 55ST, 2 PIN visit Digikey Buy
MDS800 Microsemi Corporation RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 55ST, 2 PIN visit Digikey Buy
TAN350 Microsemi Corporation RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 55ST, 2 PIN visit Digikey Buy
1214-220M Microsemi Corporation RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, 55ST, 2 PIN visit Digikey Buy
1214-150L Microsemi Corporation RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, 55ST-1, 2 PIN visit Digikey Buy

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Part : AS6C4008-55STIN Supplier : Alliance Memory Manufacturer : TME Electronic Components Stock : 173 Best Price : $3.33 Price Each : $4.70
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Part : GMSTB 2,5/5-ST-7,62 Supplier : - Manufacturer : Chip One Exchange Stock : 79 Best Price : - Price Each : -
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Part : AS6C62256-55STINTR Supplier : ALLIANCE MEMORY Manufacturer : New Advantage Stock : 1,500 Best Price : $1.33 Price Each : $1.33
Part : IRM-45-5ST Supplier : Mean Well Manufacturer : Sager Stock : 5 Best Price : $11.45 Price Each : $14.20
Part : 1607655 - ST-20KP010 Supplier : Phoenix Contact Manufacturer : Shortec Electronics Stock : 9,058 Best Price : - Price Each : -
Part : 1709076 - IPC 5/ 5-ST-7,62 Supplier : Phoenix Contact Manufacturer : Shortec Electronics Stock : 1,572 Best Price : - Price Each : -
Part : 1716535 - DFK-PC 5/ 5-ST-7,62 Supplier : Phoenix Contact Manufacturer : Shortec Electronics Stock : 1,331 Best Price : - Price Each : -
Part : 1716645 - DFK-PC 5/ 5-STF-7,62 Supplier : Phoenix Contact Manufacturer : Shortec Electronics Stock : 1,218 Best Price : - Price Each : -
Part : AS6C1008-55STIN Supplier : Alliance Memory Manufacturer : Symmetry Electronics Stock : - Best Price : $1.25 Price Each : $1.25
Part : AS6C1008-55STINL Supplier : Alliance Memory Manufacturer : Symmetry Electronics Stock : - Best Price : $1.58 Price Each : $1.58
Part : AS6C1008-55STINLTR Supplier : Alliance Memory Manufacturer : Symmetry Electronics Stock : - Best Price : $1.64 Price Each : $1.64
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55ST

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 9.10,11 9,10, 11 (·33MHz) TEMPERATURE -55°STA S+125°C -55°ST a S+125°C -55°ST a S+125°C -55°ST a £+125°C -55" S T A i +125°C -55°ST a S+125°C -55°ST a S+125°C MIN 30 12 12 30 12 12 10 MAX - (-25MHz , Vcc = 5.5V UNITS V 3 1 D FILTERS V|L Vcc - 4.5V 1,2,3 -55°ST a S+ 125°C - 0.8 , T aw h 9, 10, 11 -55°ST a S+125°C 1 - 1 - ns Tcws 9,10,11 -55°ST a S+125°C 12 - 15 - ns t cw h 9,10,11 -55°ST a S+125°C 1.5 - 1.5 - ns t -
OCR Scan
HSP43168/883 100KH F15/2 SUM26 SUM27 SUM25

J294

Abstract: sit transistor 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET (Common Gate) The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power , 0.82 + j0.83 1.86 + j2.08 (MHz) CASE OUTLINE 55ST Common Gate 1 = Drain 2 = Gate 3 =
Microsemi
Original
J294 sit transistor SIT Static Induction Transistor Static Induction Transistor SIT electrolytic capacitor, .1uF 1000W 18AWG
Abstract: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET (Common Gate) GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power , 0.82 + j0.83 1.86 + j2.08 (MHz) CASE OUTLINE 55ST Common Gate 1 = Drain 2 = Gate 3 = Microsemi
Original
Abstract: POWER TRANSISTORS DWG NO. 55ST -
OCR Scan

chn7

Abstract: STa S +125°C -55° , referenced to device GND. NOTES 1 1 TEMPERATURE -55°STA S+125°C -55°ST a S+125°C MIN Cqut Too , CHARACTERISTICS Device Guaranteed and 100% Tested GROUPA SUB GROUPS 1,2,3 LIMITS TEMPERATURE -55°STA S + 125°C MIN , V|L Vcc = 4.5V 1,2,3 -55°ST a S+125°C - 0.8 V V|HC Vcc = 5.5V 1,2,3 , , Vcc = 5.5V (Note 2) (Note 3) 1,2,3 -55°STAS + 125°C 2.6 - V Output LOW Voltage Input
-
OCR Scan
chn7 HSP45256/883 SP45256 HSP45256 CAS0UT11 CAS0UT12

R1LP0108ESA-7SR

Abstract: AS6C62256A-70P AS6C62256A-70S N/A AS6C62256-55S N/A N/A AS6C1008-55ST CY62128EV30LL , -55T R1LV0108ESA-5SI CY62128EV30LL-45ZAXIT IS62WV1288BLL-55HLI AS6C1008-55ST CY62138FV30LL , -45ZAXI IS62WV2568BLL-55HLI AS6C2008-55ST TSOP(44) R1LV0216BSB-5SI CY62137FV30LL-45ZSXI IS62WV12816BLL , -55HLI AS6C4008-55ST TSOP N/A CY62146ELL-45ZSXI_ Under development RMLV0416EGSB
Renesas Electronics
Original
R1LP0108ESA-7SR LV3216RSA-5SI R1LV3216RSA-7SI R1LV3216RSD-5SR R1LV3216RSD-7SR R1LV3216RSD-5SI R1LV3216RSD-7SI
Abstract: R.-.101199 TAN 350 350 Watts, 50 Volts, Pulsed Avionics 960 ­ 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The TAN 350 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends Ghz Technology
Original

ADVANCED POWER TECHNOLOGY

Abstract: 1090mhz TAN 350 350 Watts, 50 Volts, Pulsed Avionics 960 ­ 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The TAN350 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life
Advanced Power Technology
Original
ADVANCED POWER TECHNOLOGY 1090mhz

TACAN

Abstract: junction temperature, extends life. CASE OUTLINE 55ST Style 1 ABSOLUTE MAXIMUM RATINGS Maximum
Ghz Technology
Original
TACAN

MDS800

Abstract: R.3.110599 MDS800 800 Watts, 50 Volts, Pulsed Avionics 1090 MHz PRELIMINARY GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1090 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thinfilm metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal
Ghz Technology
Original

TAN350

Abstract: R.-.101199 TAN 350 350 Watts, 50 Volts, Pulsed Avionics 960 ­ 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The TAN 350 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends
Ghz Technology
Original

1458

Abstract: TCS600 R.1.A.992005-HERICK TCS600 600 Watts, 50 Volts, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The TCS600 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030/1090 MHz, with the pulse width and duty required for TCAS applications. The device has gold thinfilm metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal
Ghz Technology
Original
1458

1030 PULSED 32uS MODE-S .400 x .500

Abstract: MDS500L MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS500L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 / 1090 MHz frequency band. The transistor includes input prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting in a hermetically sealed package for proven highest MTTF. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation
Microsemi
Original
1030 PULSED 32uS MODE-S .400 x .500

Transistor J182

Abstract: j182 MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS500L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes input and output prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting in a hermetically sealed package for proven highest MTTF. ABSOLUTE MAXIMUM RATINGS Maximum Power
Microsemi
Original
Transistor J182 j182 j182 transistor J221 j182 ic j161 51157X 1030MH 1090MH

1030 mhz

Abstract: 32us MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 MHz PRELIMINARY GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS500L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 MHz frequency band. The transistor includes input prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting in a hermetically sealed package for proven highest MTTF. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device
Microsemi
Original
1030 mhz 32us

TACAN

Abstract: junction temperature, extends life. CASE OUTLINE 55ST Style 1 ABSOLUTE MAXIMUM RATINGS Maximum
Ghz Technology
Original

1214-300V

Abstract: high reliability and supreme ruggedness. CASE OUTLINE 55ST, STYLE 1 ABSOLUTE MAXIMUM RATINGS
Advanced Power Technology
Original
1214-300V
Abstract: high reliability and supreme ruggedness. CASE OUTLINE 55ST, STYLE 1 ABSOLUTE MAXIMUM RATINGS Microsemi
Original

Transistor J182

Abstract: MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS500L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes input and output prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting in a hermetically sealed package for proven highest MTTF. ABSOLUTE MAXIMUM RATINGS Maximum Power
Microsemi
Original
Abstract: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET (Common Gate) GENERAL DESCRIPTION The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1500 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Microsemi
Original
1500W
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