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55ST

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Abstract: 9.10,11 9,10, 11 (·33MHz) TEMPERATURE -55°STA S+125°C -55°ST a S+125°C -55°ST a S+125°C -55°ST a £+125°C -55" S T A i +125°C -55°ST a S+125°C -55°ST a S+125°C MIN 30 12 12 30 12 12 10 MAX - (-25MHz , Vcc = 5.5V UNITS V 3 1 D FILTERS V|L Vcc - 4.5V 1,2,3 -55°ST a S+ 125°C - 0.8 , T aw h 9, 10, 11 -55°ST a S+125°C 1 - 1 - ns Tcws 9,10,11 -55°ST a S+125°C 12 - 15 - ns t cw h 9,10,11 -55°ST a S+125°C 1.5 - 1.5 - ns t ... OCR Scan
datasheet

8 pages,
293.99 Kb

HSP43168/883 TEXT
datasheet frame
Abstract: 0405SC-1000M 0405SC-1000M Rev F 0405SC-1000M 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET (Common Gate) The 0405SC-1000M 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power , 0.82 + j0.83 1.86 + j2.08 (MHz) CASE OUTLINE 55ST Common Gate 1 = Drain 2 = Gate 3 = ... Microsemi
Original
datasheet

4 pages,
200.64 Kb

0405SC-1000M 1000UF 20V CAPACITOR electrolytic capacitor, 1uF static induction transistor J-032 J072 silicon carbide "silicon carbide" FET J29-4 transistor 406 specification transistor 1000W transistor sit "Static Induction Transistor" 2.t transistor j294 electrolytic capacitor, .1uF Static Induction Transistor SIT sit transistor SIT Static Induction Transistor J294 TEXT
datasheet frame
Abstract: 0405SC-1000M 0405SC-1000M Rev F 0405SC-1000M 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET (Common Gate) GENERAL DESCRIPTION The 0405SC-1000M 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power , 0.82 + j0.83 1.86 + j2.08 (MHz) CASE OUTLINE 55ST Common Gate 1 = Drain 2 = Gate 3 = ... Microsemi
Original
datasheet

4 pages,
186.57 Kb

0405SC-1000M TEXT
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Abstract: POWER TRANSISTORS DWG NO. 55ST ... OCR Scan
datasheet

1 pages,
32 Kb

TEXT
datasheet frame
Abstract: STa S +125°C -55° , referenced to device GND. NOTES 1 1 TEMPERATURE -55°STA S+125°C -55°ST a S+125°C MIN Cqut Too , CHARACTERISTICS Device Guaranteed and 100% Tested GROUPA SUB GROUPS 1,2,3 LIMITS TEMPERATURE -55°STA S + 125°C MIN , V|L Vcc = 4.5V 1,2,3 -55°ST a S+125°C - 0.8 V V|HC Vcc = 5.5V 1,2,3 , , Vcc = 5.5V (Note 2) (Note 3) 1,2,3 -55°STAS + 125°C 2.6 - V Output LOW Voltage Input ... OCR Scan
datasheet

8 pages,
343.37 Kb

chn7 HSP45256/883 TEXT
datasheet frame
Abstract: AS6C62256A-70P AS6C62256A-70P AS6C62256A-70S AS6C62256A-70S N/A AS6C62256-55S AS6C62256-55S N/A N/A AS6C1008-55ST CY62128EV30LL CY62128EV30LL , -55T R1LV0108ESA-5SI R1LV0108ESA-5SI CY62128EV30LL-45ZAXIT CY62128EV30LL-45ZAXIT IS62WV1288BLL-55HLI IS62WV1288BLL-55HLI AS6C1008-55ST CY62138FV30LL CY62138FV30LL , -45ZAXI -45ZAXI IS62WV2568BLL-55HLI IS62WV2568BLL-55HLI AS6C2008-55ST TSOP(44) R1LV0216BSB-5SI R1LV0216BSB-5SI CY62137FV30LL-45ZSXI CY62137FV30LL-45ZSXI IS62WV12816BLL IS62WV12816BLL , -55HLI -55HLI AS6C4008-55ST TSOP N/A CY62146ELL-45ZSXI CY62146ELL-45ZSXI_ Under development RMLV0416EGSB RMLV0416EGSB ... Renesas Electronics
Original
datasheet

8 pages,
2113.9 Kb

TEXT
datasheet frame
Abstract: R.-.101199 TAN 350 350 Watts, 50 Volts, Pulsed Avionics 960 ­ 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The TAN 350 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends ... Ghz Technology
Original
datasheet

1 pages,
21.1 Kb

TEXT
datasheet frame
Abstract: TAN 350 350 Watts, 50 Volts, Pulsed Avionics 960 ­ 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The TAN350 TAN350 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life ... Advanced Power Technology
Original
datasheet

4 pages,
707.02 Kb

TAN350 ADVANCED POWER TECHNOLOGY TEXT
datasheet frame
Abstract: junction temperature, extends life. CASE OUTLINE 55ST Style 1 ABSOLUTE MAXIMUM RATINGS Maximum ... Ghz Technology
Original
datasheet

1 pages,
21.02 Kb

TACAN TEXT
datasheet frame
Abstract: R.3.110599 MDS800 MDS800 800 Watts, 50 Volts, Pulsed Avionics 1090 MHz PRELIMINARY GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS800 MDS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1090 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thinfilm metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal ... Ghz Technology
Original
datasheet

1 pages,
19.96 Kb

MDS800 TEXT
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