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Part Manufacturer Description Datasheet BUY
23A025 Microsemi Corporation RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, 55BT, 2 PIN visit Digikey Buy
2003 Microsemi Corporation RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, 55BT, 2 PIN visit Digikey Buy
2301 Microsemi Corporation RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, S Band, Silicon, NPN, HERMETIC SEALED, 55BT, 2 PIN visit Digikey Buy
23A008 Microsemi Corporation RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, S Band, Silicon, NPN, HERMETIC SEALED, 55BT, 2 PIN visit Digikey Buy
2304 Microsemi Corporation RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, S Band, Silicon, NPN, HERMETIC SEALED, 55BT, 2 PIN visit Digikey Buy
23A017 Microsemi Corporation RF Small Signal Bipolar Transistor, 0.8A I(C), 1-Element, S Band, Silicon, NPN, HERMETIC SEALED, 55BT, 2 PIN visit Digikey Buy

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Part : MMSZ5255BT1G Supplier : ON Semiconductor Manufacturer : Avnet Stock : 42,000 Best Price : $0.0363 Price Each : $0.0430
Part : MMSZ5255BT1G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.0220 Price Each : $0.0253
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Part : MMSZ5255BT1G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 1,857 Best Price : $0.0450 Price Each : $0.23
Part : MMSZ5255BT1G. Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 39,000 Best Price : $0.0510 Price Each : $0.0660
Part : MMSZ5255BT1G Supplier : ON Semiconductor Manufacturer : Allied Electronics & Automation Stock : - Best Price : $0.0780 Price Each : $0.08
Part : MMSZ5255BT1G Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $0.0266 Price Each : $0.0287
Part : MMSZ5255BT1 Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 447,000 Best Price : $0.02 Price Each : $0.02
Part : MMSZ5255BT1G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 316,000 Best Price : $0.05 Price Each : $0.05
Part : R1191H055B-T1-FE Supplier : Ricoh Electronic Devices Manufacturer : Rochester Electronics Stock : 6,000 Best Price : $0.51 Price Each : $0.51
Part : MMSZ5255BT1 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 2,300 Best Price : - Price Each : -
Part : MMSZ5255BT1 Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 2,029 Best Price : - Price Each : -
Part : MMSZ5255BT1G Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 2,689 Best Price : - Price Each : -
Part : MMSZ5255BT1G Supplier : ON Semiconductor Manufacturer : RS Components Stock : 2,700 Best Price : £0.0310 Price Each : £0.0530
Part : MMSZ5255BT1G Supplier : ON Semiconductor Manufacturer : TME Electronic Components Stock : 2,700 Best Price : $0.0159 Price Each : $0.0275
Part : MMSZ5255BT1G Supplier : ON Semiconductor Manufacturer : Chip One Exchange Stock : 18,000 Best Price : - Price Each : -
Part : MMSZ5255BT1G Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 10 Best Price : $0.0932 Price Each : $0.0932
Part : R1190H055B-T1-FE Supplier : Ricoh Electronic Devices Manufacturer : Chip1Stop Stock : 95 Best Price : $1.16 Price Each : $1.16
Part : MMSZ5255BT1G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 8,682 Best Price : $0.04 Price Each : $0.2820
Part : MMSZ5255BT1G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 8,697 Best Price : £0.0420 Price Each : £0.1380
Part : PCF0603R-2K55BT1 Supplier : TT Electronics Manufacturer : Farnell element14 Stock : - Best Price : £0.1707 Price Each : £0.3590
Part : MMSZ5255BT1G Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 950 Best Price : $0.04 Price Each : $0.05
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55BT-1

Catalog Datasheet MFG & Type PDF Document Tags

in 3003 TRANSISTOR

Abstract: 3003 transistor 3003 3 Watts - 28 Volts, Class C Microwave 3000 MHz GENERAL DESCRIPTION CASE OUTLINE 55BT-1, STYLE 1 The 3003 is a COMMON BASE transistor capable of providing 3 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 10 Watts Maximum Voltage and Current
Ghz Technology
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in 3003 TRANSISTOR 3003 transistor

2 watt rf transistor

Abstract: 2003 3 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 2003 is a COMMON BASE transistor capable of providing 3 Watts Class C, RF output power at 2000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor is uses a fully hermetic High Temperature solder Sealed package. 55BT-1, Style 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 12 Watts Maximum Voltage and Current
Ghz Technology
Original
2 watt rf transistor
Abstract: 2005 5.0 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 2005 is a COMMON BASE transistor capable of providing 5 Watts Class C, RF output power at 2000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package. 55BT-1, Style 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 20 Watts Maximum Voltage and Current Ghz Technology
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Abstract: 101/101A 1 Watt - 28 Volts, Class C Microwave, 500-1200 MHz GENERAL DESCRIPTION CASE OUTLINE The 101/101A is a COMMON BASE transistor capable of providing 1 Watt Class C, RF output power at 500-1200 MHz. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package. 55BT-1, Style 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 7.0 Watts Maximum Voltage and Current Ghz Technology
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100 watt transistor

Abstract: 2001 1.0 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 2001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 2000 MHz. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package. 55BT-1, Style 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector
Ghz Technology
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100 watt transistor

RF TRANSISTOR 1 WATT

Abstract: 2010 10 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION CASE OUTLINE 55BT-1, Style The 2010 is a COMMON BASE transistor capable of providing 10 Watts Class C, RF output power at 2000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 30 Watts Maximum Voltage and Current BVces Collector to
Ghz Technology
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RF TRANSISTOR 1 WATT