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550nm

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Abstract: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. LOC DIST REVISIONS LTH © COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. EA 17 DESCRIPTION DATE DWN APVD REVISE PER ECN 0 A 0 0 - 0 4 8 2 - 0 4 130CT04 130CT04 LGE RP D ST CONNECTOR LEAD I.D. TAGS u m iM m in r \ ip JACKET TYPE 131 Onm 1 3 1 0 / 1 550nm 1 550nm PORT 1 PORT 2 PORT 3 100.0 , 1 0 /1 550nm DRAWING NO RESTRICTED TO MATERIAL A 3 00779 © = 9 9 1 0 5 SCALE CUSTOMER ... OCR Scan
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1 pages,
36.49 Kb

datasheet abstract
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Abstract: (°C) o CO c o CO o 100 10 Q_ '-I-' 3 -.H- 1 X= 1,550nm^= "o p - ¿\k.! , A/W X,=1,550nm M=1 0.73 - A/W X=1,310nm Temperature Dependence of Responsivity - -3 +3 % Ta=-20 to +70°C X=1,310nm, 1,550nm -4 +4 Ta=-40 to +85°C Breakdown Voltage VB 45 65 V ID=10nA , 6.3 - X=1,310, 1,550nm, M=10, f=30 MHz B=1 MHz, lpo=2nA Cutoff Frequency fc 2.5 - GHz M=5 X=1,310, 1,550nm R|_=50Q -3dB from 500KHZ 500KHZ 2.5 - M=10 1.5 - M=20 Capacitance Ct - 0.6 PF ... OCR Scan
datasheet

6 pages,
299.52 Kb

Fujitsu Quantum Devices FPD5W1KS avalanche photodiode ingaas ghz idm3 photodiode avalanche photodiode ge 1550nm photodiode 5 Ghz 500KHZ InGaAs Photodiode 1550nm 550NM photodiode avalanche photodiode noise factor Fujitsu APD photodiode InGaAs datasheet abstract
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Abstract: OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, ^=1,310/1,550nm, VSS=-5.2V, unless otherwise specified) Parameter Symbol Test Conditions Limits Unit Min. Typ. Max. APD Responsivity R15 1,550nm, M=1 0.80 , RL=50Q Pin=-30dBm X= 1,310/1,550nm 2.0 1.5 Frequency, f (GHz) 3.0 Fig.4 Eye Diagram with a 1,550nm, 2.5Gb/s NRZ, 223-1 PRBS incident signal Input optical wave , X-1,310/1,550nm 2.5Gb/s, NRZ Vss=-5.2V M=Optimum Duty 50% Mark Density 50% ... OCR Scan
datasheet

4 pages,
232.71 Kb

FRM5W231KT FRM5W231 Fujitsu APD InGaAs APD Pre-Amplifier FRM5W231KT/LT FRM5W231KT/LT abstract
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Abstract: Photodiode OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40°C to +85°C, =1,310/1,550nm, unless otherwise , ,550nm, M=1, 25°C = 1,310/1,550nm, M=1, -40 ~ +85°C = 1,610nm, M=1, 25°C Min. 0.8 0.8 Limits , Response (Air Gap ~ 2mm) 1000 Ta=25°C, = 1,550nm PCB Ta = 25°C, = 1,550nm, Pin=2µW, AC , 1,550nm, Pin=2µW, AC coupled, RL = 50 M=20 M=15 Multiplication Factor, M Relative , ,550nm, Pin=2µW, AC coupled, RL = 50 10 Air Gap=0mm Air Gap=2mm 1 0.1 0.1 1 10 ... Original
datasheet

6 pages,
179.37 Kb

sensitivity dB photodiode pin 1550nm 550NM photodiode avalanche 1550nm photodiode 5 Ghz avalanche photodiode avalanche photodiode noise factor GaP photodiode low dark current APD photodiode 40ghz Fujitsu APD Photodiode apd high sensitivity Photodiode 1550nm bandwidth datasheet abstract
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Abstract: Photodiode OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40°C to +85°C, =1,310/1,550nm, unless otherwise , ,550nm, M=1, 25°C = 1,310/1,550nm, M=1, -40 ~ +85°C = 1,610nm, M=1, 25°C Min. 0.8 0.8 Limits , Response (Air Gap ~ 2mm) 1000 Ta=25°C, = 1,550nm PCB Ta = 25°C, = 1,550nm, Pin=2µW, AC , 1,550nm, Pin=2µW, AC coupled, RL = 50 M=20 M=15 Cutoff Frequency, (GHz) Relative , ,550nm, Pin=2µW, AC coupled, RL = 50 10 Air Gap=0mm Air Gap=2mm 1 0.1 0.1 1 10 ... Original
datasheet

6 pages,
182.48 Kb

GaP photodiode GaP photodiode APD photodiode 1550nm 2 GHZ photodiode 1550nm 4 Ghz Photodiode apd high sensitivity photodiode responsivity 1550nm 2 pin photodiode 10 ghz 550NM photodiode pin photodiode 1550nm sensitivity photodiode Avalanche photodiode photodiode Avalanche photodiode APD Fujitsu APD datasheet abstract
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Abstract: TO-8,550nm,Ron=9K,Roff=600K TO-8,550nm,7.2k TYP TO-8,550nm,Ron=1.5K,Roff=100K TO-8,Mid-Resistance , Epoxy,550nm,Ron=1.5K, Roff=75K Epoxy,550nm,Ron=6.0K, Roff=400K Epoxy,550nm,Ron=6K,Roff=400K Ron=2-6K , ,550nm,Ron=3.3K, Roff=220K TO-5,550nm,Ron=7.5K,Roff=500K Ron=2000 Ohms , ,Roff=400K Epoxy,550nm,Ron=28K,Roff=14Meg Epoxy, Ron=3.3K Ron=15-45K 15-45K,Roff=20Meg Ron , ,550nm,Ron=30K TYP TO-46,515nm,Ron=66K TYP,Roff=4.5Meg Ron of 125K to 250K TO-46,735nm,Ron=66K ... Original
datasheet

5 pages,
73.09 Kb

340 opto isolator CLI810M CL905 CL905N TO46 lens phototransistor CLt2190 CL8601M-X CLE5010F photoconductor CL5M9M slotted optocoupler CL5M9M CLM6000 opto coupler array CLT2190-X datasheet abstract
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Abstract: 1,550nm MQW-DFB Coaxial Laser Module FEATURES · Low threshold current and Low operating current · , , Pf=2.0mW CW, Pf=2.0mW CW, Pf=2.0mW 1,550nm MQW-DFB Coaxial Laser Module Limits Typ. Max. 1.1 0.1 0.2 1 , Edition 1.0 March 1999 1,550nm MQW-DFB Coaxial Laser Module FLD5F8KM/LK Fig. 2 Forward Voltage vs , 3 FLD5F8KM/LK 1,550nm MQW-DFB Coaxial Laser Module Fig. 5 Temperature Dependance of , Case Temperature, Tc (°C) Frequency, f (MHz) 4 Edition 1.0 March 1999 1,550nm MQW-DFB ... Original
datasheet

7 pages,
444.05 Kb

FLD5F8KM LK 1628 datasheet abstract
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Abstract: Responsibility: typ. 0.85A/W at 1,550nm • 30|jm active area APD chip with GaAs pre-amplifier • High temperature , ,550nm, VSS=-5.2V, unless otherwise specified) Parameter Symbol Test Conditions Limits Unit Min. Typ. Max. APD Responsivity R15 1,550nm, M=1 0.80 0.85 - A/W R13 1,310nm, M=1 0.75 0.85 - A/W APD , ) > 4-> _co a) cc Ta = 25°C Vss=-5.2V AC-Coupled RL=50Q Pin=-40dBm X= 1,310/1,550nm M = 10 3 1 , Fig.4 Eye Diagram with a 1,550nm, 622Mb/s NRZ, 223-1 PRBS incident signal Input optical wave form with ... OCR Scan
datasheet

5 pages,
284.9 Kb

InGaAs APD Pre-Amplifier Fujitsu APD FRM5W621KT/LT FRM5W621KT/LT abstract
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Abstract: 1,550nm MQW-DFB _ Coaxial Laser Module FLD5F8HF/KM/LK FEATURES • Low threshold current and Low , FUJITSU FLD5F8HF/KM/LK 1,550nm MQW-DFB _ Coaxial Laser Module OPTICAL AND ELECTRICAL CHARACTERISTICS , Edition 1.0 March 1999 1,550nm MQW-DFB _ Coaxial Laser Module Fig. 1 Forward Current vs Output Power , /KM/LK 1,550nm MQW-DFB _ Coaxial Laser Module Fig. 5 Temperature Dépendance of Wavelength Pf=2.0mW , ) FUJITSU 4 Edition 1.0 March 1999 1,550nm MQW-DFB Coaxial Laser Module FLD5F8HF/KM/LK Fig. 9 Pulse ... OCR Scan
datasheet

7 pages,
346.2 Kb

lm 1628 fujitsu, lasers Fujitsu laser FLD5F8 LK 1628 datasheet abstract
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Abstract: 1,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP FLD5F10NP FEATURES · Long transmission span over , Modulation voltage applied only on modulator section · 1,550nm peak wavelength region and very low , ,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP FLD5F10NP OPTICAL & ELECTRICAL CHARACTERISTICS (TL= Tset , Edition 1.1 February 2000 1,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP FLD5F10NP Fig. 1 Lasing , Vo = -0.7V TL = +25°C Monitor Current (mA) IF = Iop Vm= Vo 1,550nm MQW-DFB Modulator ... Original
datasheet

6 pages,
55.84 Kb

PIN photodiode 1550 5ghz 10ghz optical modulator driver 800ps dfb rin 1550 10 gb laser diode fujitsu optical module Laser burning mqw-dfb optical modulator semiconductor 10ghz optical modulator FLD5F10NP FLD5F10NP abstract
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Abstract: GaP - UV-Photodiodes (150 - 550 nm) Schottky barrier type_ EPD-150-0/3 EPD-150-0/3.6 Description Wide bandwidth and high spectral sensitivity in the UV and visible ranges (150 nm - 550 nm), chip based on GaP Applications Medical engineering (dermatology), output check of UV - lamps and gas burner flame, measurement and control of ecological parameters, radiation control for a solarium, UV water purification facilities Features Mounted in hermetically sealed TO-39 package with sapphire window EPD-150 EPD-150 ... OCR Scan
datasheet

1 pages,
73.81 Kb

TO39 package datasheet abstract
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Abstract: CONDITION: 550nm WAVELENGTH. * CHROMATICITY COORDINATES PER THE ICI STANDARD COLORIMETRIC SYSTEM. LIMITS , , 550nm WHITE LEDS, WATER CLEAR LENS. CONFIDENTIAL INFORMATION THE INFORMATION CONTAINED IN THIS DOCUMENT ... OCR Scan
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1 pages,
80.41 Kb

datasheet abstract
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Abstract: : 550nm WAVELENGTH. * CHROMATICITY COORDINATES PER THE ICI STANDARD COLORIMETRIC SYSTEM. LIMITS OF SAFE , , 550nm WHITE LEDS, WATER CLEAR LENS. CONFIDENTIAL INFORMATION THE INFORMATION CONTAINED IN THIS DOCUMENT ... OCR Scan
datasheet

1 pages,
86.39 Kb

datasheet abstract
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Abstract: INTENSITY TESTING CONDITION: 550nm WAVELENGTH, LIMITS OF SAFE OPERATION AT 25X PARAMETER MAX UNITS PEAK , LED, 4 LEADED, 550nm ULTRA WHITE LED, WATER CLEAR LENS. CONFIDENTIAL INFORMATION DE INFORMATION ... OCR Scan
datasheet

1 pages,
51.52 Kb

SML-LXL505UWC L-LXL505U L-LXL505U abstract
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Abstract: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic 550 nm (green color) Type PDV-V404 PDV-V404 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE + 0.005 [0.13] 0.080 [2.03] 0.200 [5.08] DIA PIN CIRCLE 0.365 [9.27] 0.355 [9.02] DIA 0.345 [8.76] 0.335 [8.51] 0.245 [6.22] 0.235 [5.97] DIA 0.500 [12.70] CHIP 0.330 [8.38] 0.320 [8.13] DIA 45° 0.020 [0.51] DIA 2 PLACES 0.035 ... Original
datasheet

1 pages,
40.04 Kb

PDV-V404 LARGE SURFACE AREA PHOTODIODE filter color filter photodiode 550-nm CWL PDV-V404 abstract
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Abstract: FORCE OR R0.8 POLYACETAL PEN SURFACE MORE THAN 2H PENCIL TEST LIGHT MORE THAN @550nm ... Original
datasheet

3 pages,
466.5 Kb

U3300 TS320240BRNO TS320240 TS320240BRNO abstract
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Abstract: FORCE OR R0.8 POLYACETAL PEN SURFACE MORE THAN 2H PENCIL TEST LIGHT MORE THAN @550nm ... Original
datasheet

3 pages,
468.45 Kb

U3300 NHD-TS320240BRN0 NHD-TS320240BRN0 abstract
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* Dark current as a function of VR: IDARK*V(1,6) * and Spectral Photosensitivity (A/W): SENS at 550NM
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Spice Models 18/04/2010 16.82 Kb LIB diode5.lib