NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: (°C) o CO c o CO o 100 10 Q_ 'â- I-' 3 â- .H- 1 X= 1,550nm^= "o p - ¿\k.! , A/W X,=1,550nm M=1 0.73 - A/W X=1,310nm Temperature Dependence of Responsivity - -3 +3 % Ta=-20 to +70°C X=1,310nm, 1,550nm -4 +4 Ta=-40 to +85°C Breakdown Voltage VB 45 65 V ID=10nA , 6.3 - X=1,310, 1,550nm, M=10, f=30 MHz B=1 MHz, lpo=2nA Cutoff Frequency fc 2.5 - GHz M=5 X=1,310, 1,550nm R|_=50Q -3dB from 500KHZ 500KHZ 2.5 - M=10 1.5 - M=20 Capacitance Ct - 0.6 PF ... | OCR Scan |
6 pages, |
1550nm photodiode 5 Ghz avalanche photodiode ingaas ghz idm3 photodiode avalanche photodiode ge 500KHZ photodiode InGaAs Fujitsu APD avalanche photodiode noise factor photodiode Avalanche photodiode avalanche 1550nm photodiode 5 Ghz avalanche photodiode 1550nm sensitivity datasheet abstract |
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| Abstract: OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, ^=1,310/1,550nm, VSS=-5.2V, unless otherwise specified) Parameter Symbol Test Conditions Limits Unit Min. Typ. Max. APD Responsivity R15 1,550nm, M=1 0.80 , RL=50Q Pin=-30dBm X= 1,310/1,550nm 2.0 1.5 Frequency, f (GHz) 3.0 Fig.4 Eye Diagram with a 1,550nm, 2.5Gb/s NRZ, 223-1 PRBS incident signal Input optical wave , X-1,310/1,550nm 2.5Gb/s, NRZ Vss=-5.2V M=Optimum Duty 50% Mark Density 50% ... | OCR Scan |
4 pages, |
Fujitsu APD FRM5W231KT FRM5W231 InGaAs APD Pre-Amplifier FRM5W231 abstract |
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| Abstract: Photodiode OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40°C to +85°C, =1,310/1,550nm, unless otherwise , ,550nm, M=1, 25°C = 1,310/1,550nm, M=1, -40 ~ +85°C = 1,610nm, M=1, 25°C Min. 0.8 0.8 Limits , Response (Air Gap ~ 2mm) 1000 Ta=25°C, = 1,550nm PCB Ta = 25°C, = 1,550nm, Pin=2uW, AC , 1,550nm, Pin=2uW, AC coupled, RL = 50 M=20 M=15 Cutoff Frequency, (GHz) Relative , ,550nm, Pin=2uW, AC coupled, RL = 50 10 Air Gap=0mm Air Gap=2mm 1 0.1 0.1 1 10 ... | Original |
6 pages, |
avalanche photodiode noise factor GaP photodiode GaP photodiode APD photodiode 1550nm 2 GHZ photodiode 1550nm 4 Ghz Photodiode apd high sensitivity photodiode responsivity 1550nm 2 pin photodiode 10 ghz 550NM photodiode PIN photodiode responsivity 1550nm 1.1 photodiode Avalanche photodiode APD datasheet abstract |
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| Abstract: Photodiode OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40°C to +85°C, =1,310/1,550nm, unless otherwise , ,550nm, M=1, 25°C = 1,310/1,550nm, M=1, -40 ~ +85°C = 1,610nm, M=1, 25°C Min. 0.8 0.8 Limits , Response (Air Gap ~ 2mm) 1000 Ta=25°C, = 1,550nm PCB Ta = 25°C, = 1,550nm, Pin=2uW, AC , 1,550nm, Pin=2uW, AC coupled, RL = 50 M=20 M=15 Multiplication Factor, M Relative , ,550nm, Pin=2uW, AC coupled, RL = 50 10 Air Gap=0mm Air Gap=2mm 1 0.1 0.1 1 10 ... | Original |
6 pages, |
GaP photodiode Photodiode apd high sensitivity photodiode 40ghz avalanche 1550nm photodiode 5 Ghz avalanche photodiode avalanche photodiode noise factor Fujitsu APD Photodiode 1550nm bandwidth photodiode Avalanche photodiode datasheet abstract |
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| Abstract: TO-8,550nm,Ron=9K,Roff=600K TO-8,550nm,7.2k TYP TO-8,550nm,Ron=1.5K,Roff=100K TO-8,Mid-Resistance , Epoxy,550nm,Ron=1.5K, Roff=75K Epoxy,550nm,Ron=6.0K, Roff=400K Epoxy,550nm,Ron=6K,Roff=400K Ron=2-6K , ,550nm,Ron=67.5K,Roff=45Meg TO-5,550nm,Ron=3.3K, Roff=220K TO-5,550nm,Ron=7.5K,Roff=500K Ron=2000 Ohms , ,Roff=400K Epoxy,550nm,Ron=28K,Roff=14Meg Epoxy, Ron=3.3K Ron=15-45K 15-45K,Roff=20Meg Ron , ,550nm,Ron=30K TYP TO-46,515nm,Ron=66K TYP,Roff=4.5Meg Ron of 125K to 250K TO-46,735nm,Ron=66K ... | Original |
5 pages, |
slotted optocoupler lens photodiode phototransistor Phototransistor to-18 CL904L CL1930D-X CL8601M-X 710 opto coupler CL702 opto coupler array CL905 CL905N TO46 lens phototransistor CLM6000 datasheet abstract |
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| Abstract: 1,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP FLD5F10NP FEATURES · Long transmission span over , Modulation voltage applied only on modulator section · 1,550nm peak wavelength region and very low , ,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP FLD5F10NP OPTICAL & ELECTRICAL CHARACTERISTICS (TL= Tset , Edition 1.1 February 2000 1,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP FLD5F10NP Fig. 1 Lasing , Vo = -0.7V TL = +25°C Monitor Current (mA) IF = Iop Vm= Vo 1,550nm MQW-DFB Modulator ... | Original |
6 pages, |
PIN photodiode 1550 5ghz 10ghz optical modulator driver 800ps dfb rin 1550 10 gb laser diode fujitsu optical module Laser burning mqw-dfb optical modulator semiconductor 10ghz optical modulator FLD5F10NP FLD5F10NP abstract |
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| Abstract: : typ. 0.85A/W at 1,550nm • 30|jm active area APD chip with GaAs pre-amplifier • High temperature , Current |R (Note 2) 1.0 mA OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, ^=1,310/1,550nm, VSS=-5.2V , Responsivity R15 1,550nm, M=1 0.80 0.85 - A/W R13 1,310nm, M=1 0.75 0.85 - A/W APD Breakdown Voltage VB , Vss=-5.2V AC-Coupled RL=50Q Pin=-40dBm X= 1,310/1,550nm M = 10 3 1 10 100 Frequency, f (MHz) 1000 0 50 100 , Fig.4 Eye Diagram with a 1,550nm, 622Mb/s NRZ, 223-1 PRBS incident signal Input optical wave form with ... | OCR Scan |
5 pages, |
Fujitsu APD FRM5W621 FRM5W621 abstract |
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| Abstract: preamp is intended to function as an optical receiver in 1,310nm and 1,550nm SONET, SDH or the other , (Tc=25°C, =1,550nm, Vss=-5.2V, unless otherwise specified) Symbol Test Conditions APD Responsivity R15 1,550nm, M=1 Min. 0.65 APD Breakdown Voltage VB ID=10uA 20 Temperature , ,550nm 10-4 Bit Error Rate M=10 M=6 M=3 10-5 10-6 70°C 10-7 0°C 10-8 25°C , Photocurrent (A) Multiplication Factor (M) =1,550nm 9.95328Gb/s, NRZ duty, mark density=0.5 Vss=-5.2V ... | Original |
7 pages, |
preamp 12 to 15 ghz apd gain control 10 gb APD receiver PIN APD DIODE Fujitsu APD FRM5N142DS FRM5N142DS abstract |
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| Abstract: 1,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP FLD5F10NP FEATURES · Long transmission , operation of DFB laser section · Modulation voltage applied only to modulator section · 1,550nm peak , Time Edition 1.1 February 2000 1 1,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP FLD5F10NP , 2000 1,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP FLD5F10NP Relative Intensity (10 dB/div. , February 2000 Vo = -0.7V TL = +25°C Monitor Current (mA) IF = Iop Vm= Vo 1,550nm MQW-DFB ... | Original |
6 pages, |
FLD5F10NP 10ghz modulator driver 550NM photodiode 10 gb laser diode FLD5F10NP abstract |
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| Abstract: preamp is intended to function as an optical receiver in 1,310nm and 1,550nm SONET, SDH or the other , 1.0 mA OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, =1,550nm, Vss=-5.2V, unless otherwise specified) Symbol Test Conditions APD Responsivity R15 1,550nm, M=1 Min. 0.65 APD , ,550nm 10-4 Bit Error Rate M=10 M=6 M=3 10-5 10-6 70°C 10-7 0°C 10-8 25°C , Photocurrent (A) Multiplication Factor (M) =1,550nm 9.95328Gb/s, NRZ duty, mark density=0.5 Vss=-5.2V ... | Original |
7 pages, |
PREAMP circuit diagram FRM5N142DS circuit diagram body thermistor 10 gb APD receiver FRM5N142DS abstract |
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| Abstract: GaP - UV-Photodiodes (150 - 550 nm) Schottky barrier type_ EPD-150-0/3 EPD-150-0/3.6 Description Wide bandwidth and high spectral sensitivity in the UV and visible ranges (150 nm - 550 nm), chip based on GaP Applications Medical engineering (dermatology), output check of UV - lamps and gas burner flame, measurement and control of ecological parameters, radiation control for a solarium, UV water purification facilities Features Mounted in hermetically sealed TO-39 package with sapphire window EPD-150 EPD-150 ... | OCR Scan |
1 pages, |
TO39 package EPD-150-0/3 EPD-150-0 EPD-150-0/3 abstract |
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| Abstract: : 550nm WAVELENGTH. * CHROMATICITY COORDINATES PER THE ICI STANDARD COLORIMETRIC SYSTEM. LIMITS OF SAFE , , 550nm WHITE LEDS, WATER CLEAR LENS. CONFIDENTIAL INFORMATION THE INFORMATION CONTAINED IN THIS DOCUMENT ... | OCR Scan |
1 pages, |
datasheet abstract |
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| Abstract: INTENSITY TESTING CONDITION: 550nm WAVELENGTH, LIMITS OF SAFE OPERATION AT 25X PARAMETER MAX UNITS PEAK , LED, 4 LEADED, 550nm ULTRA WHITE LED, WATER CLEAR LENS. CONFIDENTIAL INFORMATION DE INFORMATION ... | OCR Scan |
1 pages, |
SML-LXL505UWC datasheet abstract |
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| Abstract: CONDITION: 550nm WAVELENGTH. * CHROMATICITY COORDINATES PER THE ICI STANDARD COLORIMETRIC SYSTEM. LIMITS , , 550nm WHITE LEDS, WATER CLEAR LENS. CONFIDENTIAL INFORMATION THE INFORMATION CONTAINED IN THIS DOCUMENT ... | OCR Scan |
1 pages, |
datasheet abstract |
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| Abstract: FORCE OR R0.8 POLYACETAL PEN SURFACE MORE THAN 2H PENCIL TEST LIGHT MORE THAN @550nm ... | Original |
3 pages, |
U3300 TS320240BRNO TS320240 TS320240BRNO abstract |
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| Abstract: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic 550 nm (green color) Type PDV-V404 PDV-V404 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE + 0.005 [0.13] 0.080 [2.03] 0.200 [5.08] DIA PIN CIRCLE 0.365 [9.27] 0.355 [9.02] DIA 0.345 [8.76] 0.335 [8.51] 0.245 [6.22] 0.235 [5.97] DIA 0.500 [12.70] CHIP 0.330 [8.38] 0.320 [8.13] DIA 45° 0.020 [0.51] DIA 2 PLACES 0.035 ... | Original |
1 pages, |
PDV-V404 LARGE SURFACE AREA PHOTODIODE filter color filter photodiode PDV-V404 abstract |
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| Abstract: 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4. 5. 6. 7. OA AV 8. 9. 10. RoHS 11. 12. 1. 2. 1 Laser Diode NX7539BB-AA NX7539BB-AA 1 550 nm InGaAsP MQW-FP OTDR NX7539BB-AA NX7539BB-AA ... | Original |
9 pages, |
NX7539BB-AA datasheet abstract |
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| Abstract: 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4. 5. 6. 7. OA AV 8. 9. 10. RoHS 11. 12. 1. 2. 1 PHOTO DIODE NR8360JP-BC NR8360JP-BC 30 m InGaAs TEC 14 DIP 1 0001 600 nm NR83 ... | Original |
9 pages, |
NR8360JP-BC datasheet abstract |
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| Abstract: 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4. 5. 6. 7. OA AV 8. 9. 10. RoHS 11. 12. 1. 2. 1 Laser Diode NX7538BF-AA NX7538BF-AA 1 550 nm InGaAsP MQW-FP OTDR NX7538BF-AA NX7538BF-AA ... | Original |
9 pages, |
NX7538BF-AA datasheet abstract |
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| ) 350 . 820 nm 550 nm No www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/para~726.htm |
Infineon | 19/10/2000 | 11.28 Kb | HTM | para~726.htm |
| * Dark current as a function of VR: IDARK*V(1,6) * and Spectral Photosensitivity (A/W): SENS at 550NM www.datasheetarchive.com/files/spicemodels/misc/modelos/spice_complete/diode5.lib |
Spice Models | 18/04/2010 | 16.82 Kb | LIB | diode5.lib |