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550nm

Catalog Datasheet MFG & Type PDF Document Tags

CL9020

Abstract: til99 =3.6Meg TO-8,690nm,Ron=0.25K,Roff=67K TO-8,550nm,Ron=9K,Roff=600K TO-8,550nm,7.2k TYP TO-8,550nm,Ron , ,690nm,Ron=0.45K,Roff=120K Epoxy,550nm,Ron=1.5K, Roff=75K Epoxy,550nm,Ron=6.0K, Roff=400K Epoxy,550nm , =880Meg TO-5,690nm,Ron=1.5K, Roff=1Meg TO-5,550nm,Ron=67.5K,Roff=45Meg TO-5,550nm,Ron=3.3K, Roff=220K TO-5,550nm,Ron=7.5K,Roff=500K Ron=2000 Ohms, Roff=62K Size 7, Ron=50K,Roff=15Meg Ron=6.4K, Roff=400K Epoxy,690nm,Ron=30K TYP Epoxy,690nm,Ron=54K,Roff=400K Epoxy,550nm,Ron=28K,Roff=14Meg Epoxy, Ron
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CLM6000 CLT2190-X OP8131W-X CL9020 til99 photoconductor CL5M9M CLM610 CLM3000 C-100-A-X C-100-B-X C-101-X CL1073MA-X CL1420M-2-X CL1636-X

Fujitsu APD

Abstract: lt 431 High Responsibility: typ. 0.85A/W at 1,550nm 30µm active area APD chip with GaAs pre-amplifier High , (Note 2) 1.0 mA OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, =1,310/1,550nm, Vss=-5.2V, unless otherwise specified) Symbol Test Conditions APD Responsivity R15 R13 1,550nm, M , 0.4 0.2 Ta = 25°C Vss=-5.2V AC-Coupled RL=50 Pin=-40dBm = 1,310/1,550nm M = 10 1 10 , (µA) Fig.4 Eye Diagram with a 1,550nm, 622Mb/s NRZ, 223-1 PRBS incident signal Relative Input
Fujitsu
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Fujitsu APD lt 431 ingaas apd STM4 APD FRM5W621KT/LT OC-12 FCSI0199M200

Fujitsu APD

Abstract: InGaAs APD Pre-Amplifier Responsibility: typ. 0.85A/W at 1,550nm â'¢ 30|jm active area APD chip with GaAs pre-amplifier â'¢ High , /1,550nm, VSS=-5.2V, unless otherwise specified) Parameter Symbol Test Conditions Limits Unit Min. Typ. Max. APD Responsivity R15 1,550nm, M=1 0.80 0.85 - A/W R13 1,310nm, M=1 0.75 0.85 - A/W , a) > 4â'"> _co a) cc Ta = 25°C Vss=-5.2V AC-Coupled RL=50Q Pin=-40dBm X= 1,310/1,550nm M = , Fig.4 Eye Diagram with a 1,550nm, 622Mb/s NRZ, 223-1 PRBS incident signal Input optical wave form
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InGaAs APD Pre-Amplifier FRM5W621

FPD5W1KS

Abstract: Fujitsu Quantum Devices FPD5W1KS Ambient Temperature, Ta (°C) o CO c o CO o 100 10 Q_ 'â Iâ'"' 3 â .H- 1 X= 1,550nm^= , Min. Max. Responsivity R 0.88 - A/W X,=1,550nm M=1 0.73 - A/W X=1,310nm Temperature Dependence of Responsivity - -3 +3 % Ta=-20 to +70°C X=1,310nm, 1,550nm -4 +4 Ta=-40 to +85°C , =70°C IDM3 - 340 nA Ta=85°C Excess Noise Factor F - 6.3 - X=1,310, 1,550nm, M=10, f=30 MHz B=1 MHz, lpo=2nA Cutoff Frequency fc 2.5 - GHz M=5 X=1,310, 1,550nm R|_=50Q -3dB from 500KHZ 2.5 - M=10 1.5
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FPD5W1KS Fujitsu Quantum Devices FPD5W1KS avalanche photodiode InGaAs apd photodiode avalanche photodiode 1550nm sensitivity avalanche 1550nm photodiode 5 Ghz

FLD5F10NP

Abstract: 10ghz optical modulator 1,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP FEATURES · Long transmission span over , Modulation voltage applied only on modulator section · 1,550nm peak wavelength region and very low , ,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP OPTICAL & ELECTRICAL CHARACTERISTICS (TL= Tset , 1.1 February 2000 1,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP Fig. 1 Lasing , Vo = -0.7V TL = +25°C Monitor Current (mA) IF = Iop Vm= Vo 1,550nm MQW-DFB Modulator
Fujitsu
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10ghz optical modulator optical modulator semiconductor 800ps 10 gb laser diode 10ghz optical modulator driver dfb rin 1550 FCSI0200M200

APD 1310 detector

Abstract: 10 gb APD receiver OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, =1,550nm, Vss=-5.2V, unless otherwise specified) Symbol Test Conditions APD Responsivity R15 1,550nm, M=1 Min. 0.65 APD Breakdown Voltage VB , =-27dBm = 1,550nm M=9 GB Product 80GHz Bandwidth (GHz) Relative Response (3dB/div) M=6 M , =1,550nm 9.95328Gb/s, NRZ duty, mark density=0.5 Vss=-5.2V M=optimum 10-4 10-5 10-6 70 , (dBm) 3 Tc=25°C Vss=-5.2V RL=50 =1,550nm Pin=-27dBm 10 1 15 10 Bit Error Rate
Eudyna Devices
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FRM5N143DS APD 1310 detector 10 gb APD receiver PIN APD DIODE apd 10gb dwdm PIN APD OPTICAL DIODE
Abstract: 1,550nm MQW-DFB Modulator Integrated Laser FEATURES · Modulator Integrated DFB Laser Diode Module , S11 S21 RIN Is 1,550nm MQW-DFB Modulator Integrated Laser Test Condition (Vo-Vmod)>=-3.3V, Rext , (Vo-Vmod) 2 Edition 1.1 February 2000 1,550nm MQW-DFB Modulator Integrated Laser Fig. 1 Lasing , Fig. 3 Extinction Ratio vs. Modulation Voltage 0 1,550nm MQW-DFB Modulator Integrated Laser Fig , Optical Power (dBm) 4 Edition 1.1 February 2000 1,550nm MQW-DFB Modulator Integrated Laser Fujitsu
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FLD5F10NP-A

LK 1628

Abstract: fujitsu, lasers 1,550nm MQW-DFB _ Coaxial Laser Module FLD5F8HF/KM/LK FEATURES â'¢ Low threshold current and , hours maximum Edition 1.0 March 1999 FUJITSU FLD5F8HF/KM/LK 1,550nm MQW-DFB _ Coaxial Laser Module , than -20dB, unless otherwise specified. FUJITSU Edition 1.0 March 1999 1,550nm MQW-DFB _ Coaxial , /KM/LK 1,550nm MQW-DFB _ Coaxial Laser Module Fig. 5 Temperature Dépendance of Wavelength Pf , ) FUJITSU 4 Edition 1.0 March 1999 1,550nm MQW-DFB Coaxial Laser Module FLD5F8HF/KM/LK Fig. 9 Pulse
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LK 1628 fujitsu, lasers Fujitsu laser FLD5F8HF lm 1628 FLD5F8

InGaAs apd photodiode

Abstract: Photodiode apd , SDH, and DWDM systems operating at 2.5 Gb/s. The device operates in both the 1,310 and 1,550nm , CHARACTERISTICS (Tc=25°C, =1,310/1,550nm, VDD=+5.0V unless otherwise specified) APD Breakdown Voltage , Limits Typ. 1,550nm, M=1 0.8 0.85 - 1,310nm, M=1 0.75 0.85 - VB ID , of frequency with multiplication level as a parameter. M=12 M=10 M=3 =1,550nm VDD=5.0V AC-coupled RL=50 Pin=-30dBm Ta=25°C 1 2 Frequency, f (GHz) 0 Fig. 2 Bit Error Rate at 1,550nm
Fujitsu
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FRM5W231BS Photodiode apd apd photodiode 7 ghz APD Current Monitor

Fujitsu APD

Abstract: Fujitsu Quantum Devices FRM5N143DS intended to function as an optical receiver in 1,310nm and 1,550nm SONET, SDH or the other optical fiber , APD Reverse Current IR 1.0 mA OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, =1,550nm, Vss=-5.2V, unless otherwise specified) Symbol Test Conditions APD Responsivity R15 1,550nm, M=1 Min , Relative Response (3dB/div) 10-3 Tc = 25°C Vss=-5.2V RL=50 Pin=-27dBm = 1,550nm 10-4 Bit , ) Multiplication Factor (M) =1,550nm 9.95328Gb/s, NRZ duty, mark density=0.5 Vss=-5.2V M=optimum 1.0E-04
Fujitsu
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Fujitsu Quantum Devices FRM5N143DS APD, applications, power supply
Abstract: 1,550nm Modulator Integrated DFB Laser FEATURES · Modulator Integrated DFB Laser Diode Module · , , Vm=Vo CW, IF=Ith, Vm=Vo CW, IF=Iop Note (1) 1,550nm Modulator Integrated DFB Laser Limits Type 1.4 - , Level Modulation Modulator Drive Voltage 25 -0.7 - 35 - 0 2.6 dB V Vpp 2 1,550nm , Penalty at Bit-Error-Rate=1.0E-10 3 FLD5F20NP-G Fig. 1 Lasing Spectrum 1,550nm Modulator , ,550nm Modulator Integrated DFB Laser Fig. 3 Extinction Ratio vs. Modulation Applied Voltage 0 12 9 6 3 Eudyna Devices
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Abstract: . 0.85A/W at 1,550nm 30µm active area APD chip with GaAs pre-amplifier High temperature operation up to , /1,550nm, Vss=-5.2V, unless otherwise specified) Parameter APD Responsivity APD Breakdown Voltage Temperature Coefficient of VB AC Transimpedance Symbol R15 R13 VB Zt Test Conditions 1,550nm, M=1 1,310nm, M , =-5.2V AC-Coupled RL=50 Pin=-40dBm = 1,310/1,550nm M = 10 1 10 100 1000 0.2 Slope: Zt ~ 3.8k Frequency, f (MHz) 0 0 50 100 Average Photocurrent, Iave (µA) Fig.4 Eye Diagram with a 1,550nm, 622Mb/s Eudyna Devices
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PIN photodiode responsivity 1550nm 1.1

Abstract: avalanche photodiode OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40°C to +85°C, =1,310/1,550nm, unless otherwise specified) Parameter APD Responsivity Symbol Test Conditions R = 1,310nm, M=1, 25°C = 1,550nm, M=1, 25°C = 1,310/1,550nm, M=1, -40 ~ +85°C = 1,610nm, M=1, 25°C Min. 0.8 0.8 Limits Typ , Gap ~ 2mm) 1000 Ta=25°C, = 1,550nm PCB Ta = 25°C, = 1,550nm, Pin=2µW, AC coupled , 1,550nm, Pin=2µW, AC coupled, RL = 50 M=20 M=15 Cutoff Frequency, (GHz) Relative
Eudyna Devices
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PIN photodiode responsivity 1550nm 1.1 PIN photodiode responsivity 1550nm 2,5 GHz photodiode 40ghz photodiode Avalanche photodiode photodiode Avalanche photodiode APD avalanche 1550nm photodiode bandwidth 5 Ghz

PIN photodiode responsivity 1550nm 1.1

Abstract: photodiode Avalanche photodiode OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40°C to +85°C, =1,310/1,550nm, unless otherwise specified) Parameter APD Responsivity Symbol Test Conditions R = 1,310nm, M=1, 25°C = 1,550nm, M=1, 25°C = 1,310/1,550nm, M=1, -40 ~ +85°C = 1,610nm, M=1, 25°C Min. 0.8 0.8 Limits Typ , Gap ~ 2mm) 1000 Ta=25°C, = 1,550nm PCB Ta = 25°C, = 1,550nm, Pin=2µW, AC coupled , 1,550nm, Pin=2µW, AC coupled, RL = 50 M=20 M=15 Multiplication Factor, M Relative
Eudyna Devices
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GaP photodiode APD 1310nm photodiode -28dBm sensitivity fujitsu Photodiode 1550nm bandwidth Photodiode apd high sensitivity 550NM photodiode avalanche photodiode noise factor

FRM5N142DS

Abstract: 10 gb APD receiver intended to function as an optical receiver in 1,310nm and 1,550nm SONET, SDH or the other optical fiber , APD Reverse Current IR 1.0 mA OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, =1,550nm, Vss=-5.2V, unless otherwise specified) Symbol Test Conditions APD Responsivity R15 1,550nm, M=1 Min , Tc = 25°C Vss=-5.2V RL=50 Pin=-27dBm = 1,550nm 10-4 Bit Error Rate M=10 M=6 M , ,550nm 9.95328Gb/s, NRZ duty, mark density=0.5 Vss=-5.2V M=optimum 1.0E-04 1.0E-05 0.1 0
Fujitsu
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FRM5N142DS APD preamplifier circuit and reverse bias apd gain control preamp 12 to 15 ghz InGaAs APD 28 pin

FLD5F14CN-E59

Abstract: TL E28 1,550nm MQW-DFB Modulator Integrated Laser FLD5F14CN-E FEATURES · Long transmission , of DFB laser section · Modulation voltage applied only to modulator section · 1,550nm peak , Dense Wavelength Division Multiplexing (DWDM) applications. Edition 1.0 March 1999 1 1,550nm , 2 Edition 1.0 March 1999 1,550nm MQW-DFB Modulator Integrated Laser FLD5F14CN-E , 1,550nm MQW-DFB Modulator Integrated Laser FLD5F14CN-E Fig. 1 Lasing Spectrum Fig. 2 Lasing
Fujitsu
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FLD5F14CN-E59 TL E28

FLD5F10NP-A

Abstract: 10 gb laser diode 1,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP-A FEATURES · Modulator Integrated DFB , ,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP-A OPTICAL & ELECTRICAL CHARACTERISTICS (TL , 9.95328Gb/s, PRBS, 2 -1, IF=Iop, Vm=Vo and (Vo-Vmod) 2 Edition 1.2 April 2003 1,550nm MQW-DFB , ) Edition 1.2 April 2003 0.4 3 Monitor Current (mA) Vo = -0.7V TL = +25°C 1,550nm MQW-DFB , ,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP-A Notes Edition 1.2 April 2003 5 1
Fujitsu
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photodiode 10Ghz PIN

Abstract: FLD5F20NP-C 1,550nm Modulator Integrated DFB Laser FLD5F20NP-C FEATURES · Modulator Integrated DFB , Thermistor Temperature Lead Soldering Time Edition 1.3 July 2004 1 V A 1,550nm Modulator , (Vo-Vmod)-3.3V, Rext=10dB - - 2.6 Vpp Modulator Drive Voltage 2 1,550nm Modulator , 1,550nm Modulator Integrated DFB Laser FLD5F20NP-C Fig. 1 Lasing Spectrum Relative Intensity , (mW) Wavelength (Span=1 nm/div, Res.=0.1nm) 1,550nm Modulator Integrated DFB Laser
Eudyna Devices
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photodiode 10Ghz PIN

dfb 10mw

Abstract: FLD5F6CX-J 1,550nm DFB DWDM Direct Modulation Laser FEATURES · · · · · · · Direct Modulated DFB Laser , Rs Pf Pth TE Im ID Ct fcm p d/dTc Sr tr tf fc S21 S11 Is RIN Kns ER dP 1,550nm DFB DWDM Direct , 2 1,550nm DFB DWDM Direct Modulation Laser Parameter TEC Current TEC Voltage Cooler Power TEC , FLD5F6CX-J Fig. 3 RF Return Loss 1,550nm DFB DWDM Direct Modulation Laser Fig. 4 Cooler Voltage -Current , 1,550nm DFB DWDM Direct Modulation Laser Fig. 7 Transmission Characteristics 10-4 2.48832 Gb/s
Eudyna Devices
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dfb 10mw FLD5F6CX-J dfb CW laser 1550 dwdm rise

EUDYNA FLD5

Abstract: FLD5F6CX-H 1,550nm Continuous Wave DFB Laser FEATURES · Continuous Wave (CW) Light Source for DWDM System · , =0.5GHz TL=Tset, Tc=+70°C, Pf=10mW TL=Tset, Tc=+70°C, Pf=10mW TL=25°C - 1,550nm Continuous Wave DFB Laser , listed in Table 1 2 1,550nm Continuous Wave DFB Laser Fig. 1 Forward Current vs Output Power 12 , 1555.75 1556.55 1557.36 1558.17 1558.98 1559.79 1560.61 1561.42 1562.23 1563.05 1,550nm Continuous Wave , 1,550nm Continuous Wave DFB Laser "CX" PACKAGE 17.24±0.25 15.24±0.25 14-0.5 2.54 5.4±0.5 Ø5
Eudyna Devices
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EUDYNA FLD5 FLD5F6CX-H EUDYNA FLD5F6CX continuous wave light source for dwdm system
Abstract: High Responsibility: typ. 0.85A/W at 1,550nm 30µm active area APD chip with GaAs pre-amplifier High , (Note 2) 1.0 mA OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, =1,310/1,550nm, Vss=-5.2V, unless otherwise specified) Symbol Test Conditions APD Responsivity R15 R13 1,550nm, M , 0.4 0.2 Ta = 25°C Vss=-5.2V AC-Coupled RL=50 Pin=-40dBm = 1,310/1,550nm M = 10 1 10 , (µA) Fig.4 Eye Diagram with a 1,550nm, 622Mb/s NRZ, 223-1 PRBS incident signal Relative Input -
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GM006011 Q62702-P885 BPW21

GMOY6011

Abstract: OHLY0598 1,550nm DFB DWDM Direct Modulation Laser FLD5F7CZ-J FEATURES · Direct Modulation DFB Laser , Environmental Storage Humidity Edition 1.2 July 2004 1 1,550nm DFB DWDM Direct Modulation Laser , 1,550nm DFB DWDM Direct Modulation Laser FLD5F7CZ-J TEC AND THERMISTOR CHARACTERISTICS , (°C) 0 50 100 150 Forward Current, If (mA) 3 35 40 1,550nm DFB DWDM Direct , Dependence of Wavelength 1,550nm DFB DWDM Direct Modulation Laser FLD5F7CZ-J Fig. 7 IMD3 vs
OSRAM
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Q62702P0885 GMOY6011 OHLY0598 tci 571 D-93049

direct modulation

Abstract: dfb 1310nm BUTTERFLY 1,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP FEATURES · Long transmission span over , Modulation voltage applied only on modulator section · 1,550nm peak wavelength region and very low , ,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP OPTICAL & ELECTRICAL CHARACTERISTICS (TL= Tset , 1.1 February 2000 1,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP Fig. 1 Lasing , Vo = -0.7V TL = +25°C Monitor Current (mA) IF = Iop Vm= Vo 1,550nm MQW-DFB Modulator
Eudyna Devices
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direct modulation dfb 1310nm BUTTERFLY fld5f7 laser DFB 1310nm 10mW FLD5F7CZ-J21 quadrate method

P1026

Abstract: M50100 intended to function as an optical receiver in 1,310nm and 1,550nm SONET, SDH or the other optical fiber , APD Reverse Current IR 1.0 mA OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, =1,550nm, Vss=-5.2V, unless otherwise specified) Symbol Test Conditions APD Responsivity R15 1,550nm, M=1 Min , Tc = 25°C Vss=-5.2V RL=50 Pin=-27dBm = 1,550nm 10-4 Bit Error Rate M=10 M=6 M , ,550nm 9.95328Gb/s, NRZ duty, mark density=0.5 Vss=-5.2V M=optimum 1.0E-04 1.0E-05 0.1 0
NEC
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P1026 M50100 NDL5530 P10264EJ2V0DS00
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