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ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

547 TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

547 TRANSISTOR

Abstract: 2sd637 ) Collector to base voltage VCB (V) 547 Transistor NV - IC 240 VCE=10V Ta=25°C Function=FLAT 100 , Transistor 2SD0637 (2SD637) Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 2.5±0.1 (1.0) (1.5) (1.0) 6.9±0.1 M Di ain sc te on na tin nc ue e/ d Features 3.5±0.1 s q q q 1.0±0.1 Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Collector to base , board. (0.4) (1.5) R 0.9 R 0.7 2.0±0.2 4.5±0.1 Transistor PC - Ta 500 60 Ta
Panasonic
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547 TRANSISTOR 2SD637 S

transistor C 548 B

Abstract: transistor c 548 UTC BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS , /547/548 NPN EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL TEST CONDITIONS Current gain , -037,A UTC BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R201-037,A UTC BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values
Unisonic Technologies
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transistor C 548 B transistor c 548 transistor bc547 specifications transistor C 547 ic 548 transistor b 548 BC546/547/548 BC546 BC547 BC548 100MH

4n27 opto isolator

Abstract: 4N2S 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min , 100 10 10 4N37 Trans 300 â'" 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd) Coupled Characteristics Input Diode Characteristic» Output Transistor
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4N27W 4n27 opto isolator 4N2S 4n26 opto isolator opto 4n25 4N25 transistor C 547 c

BC 547 PIN DIAGRAM

Abstract: IDG 600 activates the off-hook or the CLID external transistor switch. 6 NC Ring LIM2 19 NC , Digital AIN . . . . . . . . . . . If CLID external transistor switch is enabled, a , . These signals control the off-hook and CLID external transistor switches and is sent to the internal , signal in opposite phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits
STMicroelectronics
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ST952 TQFP32 ST952TQFP ST75951 BC 547 PIN DIAGRAM IDG 600 pin diagram of BC 547 STMicroelectronics Krypton TRANSISTOR C 557 B

4n33 and 4n35

Abstract: diagram DARLINGTON 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min , 100 10 10 4N37 Trans 300 â'" 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd) Coupled Characteristics Input Diode Characteristic» Output Transistor
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4n33 and 4n35 diagram DARLINGTON 4N28 4N29 4N30 4N31

transistor C 548 B

Abstract: TRANSISTOR c 547 B UNISONIC TECHNOLOGIES CO., LTD BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND , CHARACTERISTICS QW-R201-037.D 3 of 4 BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no , Technologies Co., LTD BC547 BC548 1 of 4 QW-R201-037.D BC546/547/548  NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS , Collect current, IC(mA) Collector Current , IC(mA)  Capacitance, Cob(pF) BC546/547/548
Unisonic Technologies
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TRANSISTOR c 547 B BC546L- BC546G- BC547L- BC547G-

104N35

Abstract: 4N27W 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min , 100 10 10 4N37 Trans 300 â'" 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd) Coupled Characteristics Input Diode Characteristic» Output Transistor
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104N35 4N35 4N36 4N37

transistor 45 f 122

Abstract: 4n33 and 4n35 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min , 100 10 10 4N37 Trans 300 â'" 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd) Coupled Characteristics Input Diode Characteristic» Output Transistor
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transistor 45 f 122 C 547 transistor TRANSISTOR 547 transistor 551 data of transistor 547 transistor 45 f 123 E55299

IDG 600

Abstract: STMicroelectronics Krypton : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , barrier, ST952 activates the off-hook or the CLID external transistor switch. LIM2 19 NC Ring , off-hook and CLID external transistor switches and are sent to the internal transmit demodulator and , phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits the line current in
STMicroelectronics
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Krypton daa Krypton isolation applications transistor 547 clid transistor BC 557 TRANSISTOR BC

IDG 600

Abstract: STMicroelectronics Krypton : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , barrier, ST952 activates the off-hook or the CLID external transistor switch. LIM2 19 NC Ring , external transistor switches and are sent to the internal transmit demodulator and receive modulator , hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits the line current in CLID mode at 1mA max
STMicroelectronics
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VTAC 4

transistor C 548 B

Abstract: transistor c 548 NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AF AMPLIFIER â'¢ HIGH , MAXIMUM RATINGS (Ta=25°C ) Symbol Characteristic Collector Base Voltage :BC546 :BC 547/550 :BC 548/549 Collector Emitter Voltage :BC546 :BC 547/550 :BC548/549 Emitter-Base Voltage :BC546/547 , Capacitance Emitter Base Capacitance Noise Figure :B C 546/547/548 :BC549/550 :BC549 :BC550 Cebo , 3 mV mV mV mV mV mV MHz PF PF dB dB dB dB NPN EPITAXIAL SILICON TRANSISTOR
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TR BC 548 BC546/547/548/549/550 BCS56 BC546/547
Abstract: UTC BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: BC546, VCEO=65V 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT 80 50 , /547/548 NPN EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL TEST CONDITIONS Current gain , -037,A UTC BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS UTC Unisonic Technologies
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ic 4n35

Abstract: 4n33 and 4n35 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min , 100 10 10 4N37 Trans 300 â'" 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd) Coupled Characteristics Input Diode Characteristic» Output Transistor
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ic 4n35

transistor 2sc124

Abstract: transistor 9014 NPN Transistor (To-92 Plastic Package) JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC15-0 HN , / 9014 2SC182 HN / BC 548 / 9014 2SC401 HN / BC 547 / 9014 2SC17 HN / BC 548 / 9014 2SC266 HN / BC 548 / 9014 2SC402 HN / BC 547 / 8550 2SC18 HN / BC 548 / 9014 2SC267 , / BC 546 / 9014 2SC404 HN / BC 547 / 9014 2SC26 HN / BC 546 / 9014 2SC281 HN / BC 548 / 9014 2SC427 HN / BC 547 / 8550 2SC28 HN / BC 547 / 9014 2SC282 HN / BC 548 / 9014
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2SC103 2SC337 2SC124 transistor 2sc124 transistor 9014 NPN equivalent of transistor 9014 NPN 2sC103 transistor Transistor BC 548 transistor bc 547 2SC166 2SC376 2SC15-1 2SC167 2SC400 2SC16

transistor C 548 B

Abstract: transistor c 548 BC546/547/548/549/550 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER « HIGH , : BC548/549/550 30 V Emitter-Base Voltage Vebo V : BC546/547 6 V : BC548/549/550 5 V Collector , VEB= =0.5V, f =1 MHz 9 PF Noise Figure : BC546/547/548 NF Vce= =5V, lc= 200nA 2 10 dB : BC549/550 , SEMICONDUCTOR tm ©1999 Fairchild Semiconductor Corporation BC546/547/548/549/550 NPN EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC / IB=4 DC^A 350fii le=3 / D0wA / lB=S
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bc548 transistor bc546 fairchild transistor bc547 transistor 547 b BC549 NPN transistor C 548 B BC556 BC560 BC547/550 50JJA

transistor vc 548

Abstract: 547 transistor BC546/547/548/549/550 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AF AMPLIFIER â'¢ HIGH , 45 V BC548/549 30 V Emitter-Base Voltage Vebo V BC546/547 6 V BC548/549/550 5 V , 1MHz 9 PF Noise Figure :BC546/547/548 NF VCe = 5V, lc =200^A, 2 10 dB :BC549/550 f=1 KHz Rg , OOESDbD T1D â  This Material Copyrighted By Its Respective Manufacturer BC546/547/548/549/550 NPN EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC TRANSFER CHARACTERISTIC IB-4 )0pA
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transistor vc 548 BC546.547 transistor NPN 548 transistor c 548 c TRANSISTOR BC 550 b TRANSISTOR BC 550 c

Transistor - BC 547, CL 100

Abstract: bc 104 npn transistor NPN SILICON TRANSISTOR TRANSISTOR NPN SILICIUM Compi, of BC 556 at 560 bc546*bc 547 *bc 548 bc549. bc 550 Preferred device Dispositif recommandé General purpose bc 546/bc 547/bc 548 Usage général BC 546/BC 547/BC 548 Low noise bc 549/bc 550 Faible bruit BC 549/BC 550 65 V bc 546 The bc , 547/bc 550 bc 548/bc 549 The bc 547, bc 548 in A-b-c groups and bc 549, bc 550 in b and c groups Les BC 547 et BC 548 dans les groupes A-B-C et Les BC 549 et BC 550 dans les groupes B et C â cm 200 mA
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Transistor - BC 547, CL 100 bc 104 npn transistor bc 408 equivalent BC548BC bc 558 equivalent bc 103 547/BC CB-76

CB 548 transistor

Abstract: transistor C 548 B NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER â'¢ HIGH VOLTAGE: BC546, VCeo=65V â'¢ LOW NOISE: BC549, BC550 â'¢ Complement to BC556 . BC560 TO , dB 1.4 3 dB NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 STATIC , : BC546 : BC547/550 : BC548/549/550 Emitter-Base Voltage : BC546/547 : BC548/549/550 Collector , Capacitance Noise Figure : BC546/547/548 C cB O Ic B O h FE C ebo NF : BC549/550 : BC549
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CB 548 transistor 15000MH

transistor bc547 specifications

Abstract: UNISO TE NIC CHNO G SCO LTD LO IE ., BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR SWI T , Tape Box Bulk 1 of 4 QW-R201-037.C BC546/547/548  NPN EPITAXIAL SILICON TRANSISTOR , ) 100 Capacitance, Cob(pF)  NPN EPITAXIAL SILICON TRANSISTOR 3 of 4 QW-R201-037.C BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment , /547/548 T Y PI CAL CH ARACT ERI ST I CS Figure 1. Static Characteristic 60 40 20 IB=150µA
Unisonic Technologies
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BC548L- BC548G-

1GHz Oscillator

Abstract: RCA 444 File No. 547 DQQB//0 RF Power Transistors Solid State Division 40909 2-W, 2-GHz Emitter-Ballasted Silicon N-P-N Overlay Transistor For Microwave Fundamental-Frequency Oscillators Features: â , TO-201AA PACKAGE RCA-40909* is an epitaxial silicon n-p-n transistor with overlay , mounting in coaxial, stripline, or lumped-constant circuits. Intended applications for this transistor , CURRENT . Ic 0.7 A TRANSISTOR DISSIPATION . PT
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TA7943 1GHz Oscillator RCA 444 RCA microwave oscillator rca transistor colpitts oscillator construction H-1629
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