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547 TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ) Collector to base voltage VCB (V) 547 Transistor NV - IC 240 VCE=10V Ta=25°C Function=FLAT 100 , Transistor 2SD0637 (2SD637) Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 2.5±0.1 (1.0) (1.5) (1.0) 6.9±0.1 M Di ain sc te on na tin nc ue e/ d Features 3.5±0.1 s q q q 1.0±0.1 Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Collector to base , board. (0.4) (1.5) R 0.9 R 0.7 2.0±0.2 4.5±0.1 Transistor PC - Ta 500 60 Ta Panasonic
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2SD637 S
Abstract: UTC BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS , /547/548 NPN EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL TEST CONDITIONS Current gain , -037,A UTC BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R201-037,A UTC BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values Unisonic Technologies
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transistor C 548 B transistor c 548 transistor bc547 specifications transistor C 547 ic 548 transistor b 548 BC546/547/548 BC546 BC547 BC548 100MH
Abstract: 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min , 100 10 10 4N37 Trans 300 â'" 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd) Coupled Characteristics Input Diode Characteristic» Output Transistor -
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4N27W 4n27 opto isolator 4N2S opto 4n25 transistor C 547 c 4n26 opto isolator 4N25
Abstract: activates the off-hook or the CLID external transistor switch. 6 NC Ring LIM2 19 NC , Digital AIN . . . . . . . . . . . If CLID external transistor switch is enabled, a , . These signals control the off-hook and CLID external transistor switches and is sent to the internal , signal in opposite phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits STMicroelectronics
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ST952 TQFP32 ST952TQFP ST75951 BC 547 PIN DIAGRAM IDG 600 STMicroelectronics Krypton pin diagram of BC 547
Abstract: 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min , 100 10 10 4N37 Trans 300 â'" 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd) Coupled Characteristics Input Diode Characteristic» Output Transistor -
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4n33 and 4n35 4N36 4N35 4N33 4N32 4N31
Abstract: UNISONIC TECHNOLOGIES CO., LTD BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND , CHARACTERISTICS QW-R201-037.D 3 of 4 BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no , Technologies Co., LTD BC547 BC548 1 of 4 QW-R201-037.D BC546/547/548  NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS , Collect current, IC(mA) Collector Current , IC(mA)  Capacitance, Cob(pF) BC546/547/548 Unisonic Technologies
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TRANSISTOR c 547 B BC546L- BC546G- BC547L- BC547G-
Abstract: 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min , 100 10 10 4N37 Trans 300 â'" 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd) Coupled Characteristics Input Diode Characteristic» Output Transistor -
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104N35 4N28 4N37
Abstract: 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min , 100 10 10 4N37 Trans 300 â'" 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd) Coupled Characteristics Input Diode Characteristic» Output Transistor -
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transistor 45 f 122 TRANSISTOR 547 C 547 transistor transistor 551 data of transistor 547 transistor 45 f 123 E55299
Abstract: : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , barrier, ST952 activates the off-hook or the CLID external transistor switch. LIM2 19 NC Ring , external transistor switches and are sent to the internal transmit demodulator and receive modulator , hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits the line current in CLID mode at 1mA max STMicroelectronics
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VTAC 4
Abstract: : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , barrier, ST952 activates the off-hook or the CLID external transistor switch. LIM2 19 NC Ring , off-hook and CLID external transistor switches and are sent to the internal transmit demodulator and , phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits the line current in STMicroelectronics
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applications transistor 547 TRANSISTOR BC Krypton isolation Krypton daa D6510 clid
Abstract: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AF AMPLIFIER â'¢ HIGH , MAXIMUM RATINGS (Ta=25°C ) Symbol Characteristic Collector Base Voltage :BC546 :BC 547/550 :BC 548/549 Collector Emitter Voltage :BC546 :BC 547/550 :BC548/549 Emitter-Base Voltage :BC546/547 , Capacitance Emitter Base Capacitance Noise Figure :B C 546/547/548 :BC549/550 :BC549 :BC550 Cebo , 3 mV mV mV mV mV mV MHz PF PF dB dB dB dB NPN EPITAXIAL SILICON TRANSISTOR -
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TR BC 548 BC546/547/548/549/550 BCS56 BC546/547
Abstract: UTC BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: BC546, VCEO=65V 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT 80 50 , /547/548 NPN EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL TEST CONDITIONS Current gain , -037,A UTC BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS UTC Unisonic Technologies
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Abstract: 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min , 100 10 10 4N37 Trans 300 â'" 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd) Coupled Characteristics Input Diode Characteristic» Output Transistor -
OCR Scan
ic 4n35
Abstract: Transistor (To-92 Plastic Package) JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC15-0 HN , / 9014 2SC182 HN / BC 548 / 9014 2SC401 HN / BC 547 / 9014 2SC17 HN / BC 548 / 9014 2SC266 HN / BC 548 / 9014 2SC402 HN / BC 547 / 8550 2SC18 HN / BC 548 / 9014 2SC267 , / BC 546 / 9014 2SC404 HN / BC 547 / 9014 2SC26 HN / BC 546 / 9014 2SC281 HN / BC 548 / 9014 2SC427 HN / BC 547 / 8550 2SC28 HN / BC 547 / 9014 2SC282 HN / BC 548 / 9014 -
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2SC103 2SC337 2SC124 transistor 2sc124 transistor 9014 NPN equivalent of transistor 9014 NPN 2sC103 transistor Transistor BC 548 transistor bc 547 2SC166 2SC376 2SC15-1 2SC167 2SC400 2SC16
Abstract: BC546/547/548/549/550 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER « HIGH , : BC548/549/550 30 V Emitter-Base Voltage Vebo V : BC546/547 6 V : BC548/549/550 5 V Collector , VEB= =0.5V, f =1 MHz 9 PF Noise Figure : BC546/547/548 NF Vce= =5V, lc= 200nA 2 10 dB : BC549/550 , SEMICONDUCTOR tm ©1999 Fairchild Semiconductor Corporation BC546/547/548/549/550 NPN EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC / IB=4 DC^A 350fii le=3 / D0wA / lB=S -
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bc548 transistor bc546 fairchild transistor bc547 transistor 547 b C 548 B BC549 NPN transistor BC556 BC560 BC547/550 50JJA
Abstract: BC546/547/548/549/550 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AF AMPLIFIER â'¢ HIGH , 45 V BC548/549 30 V Emitter-Base Voltage Vebo V BC546/547 6 V BC548/549/550 5 V , 1MHz 9 PF Noise Figure :BC546/547/548 NF VCe = 5V, lc =200^A, 2 10 dB :BC549/550 f=1 KHz Rg , OOESDbD T1D â  This Material Copyrighted By Its Respective Manufacturer BC546/547/548/549/550 NPN EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC TRANSFER CHARACTERISTIC IB-4 )0pA -
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transistor vc 548 BC546.547 transistor NPN 548 transistor c 548 c TRANSISTOR BC 550 b C 547 B
Abstract: NPN SILICON TRANSISTOR TRANSISTOR NPN SILICIUM Compi, of BC 556 at 560 bc546*bc 547 *bc 548 bc549. bc 550 Preferred device Dispositif recommandé General purpose bc 546/bc 547/bc 548 Usage général BC 546/BC 547/BC 548 Low noise bc 549/bc 550 Faible bruit BC 549/BC 550 65 V bc 546 The bc , 547/bc 550 bc 548/bc 549 The bc 547, bc 548 in A-b-c groups and bc 549, bc 550 in b and c groups Les BC 547 et BC 548 dans les groupes A-B-C et Les BC 549 et BC 550 dans les groupes B et C â cm 200 mA -
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Transistor - BC 547, CL 100 bc 104 npn transistor bc 408 equivalent BC548BC bc 558 equivalent bc 103 547/BC CB-76
Abstract: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER â'¢ HIGH VOLTAGE: BC546, VCeo=65V â'¢ LOW NOISE: BC549, BC550 â'¢ Complement to BC556 . BC560 TO , dB 1.4 3 dB NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 STATIC , : BC546 : BC547/550 : BC548/549/550 Emitter-Base Voltage : BC546/547 : BC548/549/550 Collector , Capacitance Noise Figure : BC546/547/548 C cB O Ic B O h FE C ebo NF : BC549/550 : BC549 -
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CB 548 transistor 15000MH
Abstract: UNISO TE NIC CHNO G SCO LTD LO IE ., BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR SWI T , Tape Box Bulk 1 of 4 QW-R201-037.C BC546/547/548  NPN EPITAXIAL SILICON TRANSISTOR , ) 100 Capacitance, Cob(pF)  NPN EPITAXIAL SILICON TRANSISTOR 3 of 4 QW-R201-037.C BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment , /547/548 T Y PI CAL CH ARACT ERI ST I CS Figure 1. Static Characteristic 60 40 20 IB=150ÂuA Unisonic Technologies
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BC548L- BC548G-
Abstract: File No. 547 DQQB//0 RF Power Transistors Solid State Division 40909 2-W, 2-GHz Emitter-Ballasted Silicon N-P-N Overlay Transistor For Microwave Fundamental-Frequency Oscillators Features: â , TO-201AA PACKAGE RCA-40909* is an epitaxial silicon n-p-n transistor with overlay , mounting in coaxial, stripline, or lumped-constant circuits. Intended applications for this transistor , CURRENT . Ic 0.7 A TRANSISTOR DISSIPATION . PT -
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TA7943 1GHz Oscillator RCA 444 RCA microwave oscillator rca transistor colpitts oscillator construction H-1629
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