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52b13 Datasheet

Part Manufacturer Description PDF Type Ordering
52B13/H-200 Seeq Technology 2K x 8 nMOS EPROM Memory
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2 pages,
78.41 Kb

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52B13/H-250 Seeq Technology 2K x 8 nMOS EPROM Memory
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2 pages,
78.41 Kb

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52B13/H-350 Seeq Technology 2K x 8 nMOS EPROM Memory
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2 pages,
78.41 Kb

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52B13-200 Seeq Technology Electrically Erasable ROM
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2 pages,
518.91 Kb

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52B13-250 Seeq Technology Electrically Erasable ROM
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2 pages,
518.91 Kb

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52B13-3 Seeq Technology 2K x 8 nMOS EPROM Memory
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2 pages,
78.41 Kb

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52B13-350 Seeq Technology Electrically Erasable ROM
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2 pages,
518.91 Kb

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52B13H-200 Seeq Technology Electrically Erasable ROM
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2 pages,
518.91 Kb

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52B13H-250 Seeq Technology Electrically Erasable ROM
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2 pages,
518.91 Kb

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52B13H-350 Seeq Technology Electrically Erasable ROM
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2 pages,
518.91 Kb

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52b13

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: byte erase, byte write, or chip erase mode of the 52B13/52B13H. Technology, Incorporated MD400006 MD400006 , 52B13/52B13H 16K Electrically Erasable P R O M October 1988 Features Input Latches , Description SEEQ's 52B13 and 52B13H are 2048 x 8 bit, 5 volt elec trically erasable programmable read only , 's 5213, and Intel 2816/2816A 2816/2816A. The 52B13 and 52B13H are ideal for applications that require a non-volatile , 52B13/52B13H A7 C I VCC A6 C A5 C *4 C *3 C l A8 l A9 I WE I 51 A? c A,C A0 C »0 c i/o ... OCR Scan
datasheet

7 pages,
218.67 Kb

2816 eeprom intel SEEQ 5213 seeq 2816 eeprom SEEQ 2816 intel eeprom 2816 2816A eeprom intel 2816 seeq 52b13 52B13 INTEL D 2816 intel 2816 eeprom 52B13/52B13H 52B13H TEXT
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Abstract: chip erase mode of the 52B13/52B13H. - _ _ CE (18) V,u V,H V,u V«. V,L V,H OE (20) V,L Don't , SEE , Description SEEQ's 52B13 and 52B13H are 2048 x 8 bit, 5 volt electrically erasable programmable read only , /2816A /2816A E2 Compatible MIL-STD-883 MIL-STD-883 Class B Compliant Pin Configuration Block Diagram A6 t 52B13/52B13H , E T -4 6 -1 3 -2 7 - 52B13/52B13H These ... OCR Scan
datasheet

8 pages,
563.44 Kb

seeq 52b13 SEEQ 5213 INTEL 2816 eeprom 2816A 2816A eeprom intel 2816A 52B13 TEXT
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Abstract: Voltage WE mode) in the byte erase, byte write, or chip erase mode of the 52B13/52B13H. Technology , total number of write and erase cycle is not unlimited. The 52B13 and 52B13H have been designed for , power may be re duced by placing the 52B13 or 52B13H into a standby mode. Raising Chip Enable to a TTL , to operate these modes. To write into a particular loaction of the 52B13 or 52B13H, that byte must , is presented to the I/O lines. The 52B13H performs the same as the 52B13 except that the device byte ... OCR Scan
datasheet

7 pages,
219.96 Kb

M5213 M2816 2816A eeprom intel 2816A M52B13/M52B13H E52B13/E52B13H TEXT
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Abstract: of the 52B13/52B13H. Technology, Incorporated MD400007/C MD400007/C 6-8 M52B13/M52B13H M52B13/M52B13H E52B13 E52B13 , the 52B13 or 52B13H into a standby mode. Raising Chip Enable to a TTL high will reduce the power , loaction of the 52B13 or 52B13H, that byte must first be erased. A memory location is erased by , Cycle 50 W 5 1 ns WE to Start of Read Cycle 2 US 52B13/52B13H High Voltage Write Specifications Except for the functional differences noted here, the 52B13 and 52B13H operate to the same ... OCR Scan
datasheet

7 pages,
168.61 Kb

M52B13/M52B13H E52B13/E52B13H TEXT
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Abstract: ) in the byte erase, byte write, or chip erase mode of the 52B13/52B13H. Technology, Incorporated , ©G©Q 52B13/52B13H 16K Electrically Erasable P R O M October 1988 Description Features ■ ■ ■ ■ ■ ■ ■ Input Latches SEEQ's 52B13 and 52B13H are 2 0 4 8 x 8 bit, 5 , ERASE) DATA OUTPUT (READ) 52B13/52B13H o f operating software in real-time) is made possible by this device. Applications for the 52B13 and 52B13H will be found in military avionics systems ... OCR Scan
datasheet

7 pages,
173.09 Kb

52B13/52B13H TEXT
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Abstract:  5 «V 000701 r ^ PRELIMINARY DATA SHEET V 7 52B13/52B23/52B33 52B13H , , electrically erasable read only memories, E2ROMs, include three densities. The 52B13 and 52B13H are 2048 x 8 , C) temperature ranges. Pin Configurations 52B13/52B13H 52B23/52B23H 52B23/52B23H 52B33/S2B33H 52B33/S2B33H CCI. 1 28 , of two operations for the 52B13. The 52B13 has a dual voltage detection circuit that allows the use , (Vcc = 5V ± 10%) 52B13/52B23/52B33 52B13H/52B23H/52B33H PRELIMINARY DATA SHEET "virgin" state of ... OCR Scan
datasheet

8 pages,
395.65 Kb

72482 5252 S 52B33 SEEQ 52B23 WE VQE 23 E WE VQE 11 E 52B13 WE VQE 24 E SEEQ 52B33 52B23 memory TEXT
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Abstract: ' f !r>J 5 000701 PRELIMINARY DATA SHEET 52B13/52B23/52B33 52B13H/52B23H/52B33H , erasable read only memories, E2ROMs, include three densities. The 52B13 and 52B13H are 2048 x 8 bit, the , C) temperature ranges. Pin Configurations 52B13/52B13H 52B23/52 52B23/52 H 52B33/52B33H 52B33/52B33H Vcc CCÇ 1 28 i , for the 52B13. The 52B13 has a dual voltage detection circuit that allows the use of either a TTL or a , erase, byte write, or chip erase mode of the 52B13. WE must be used in the TTL W/E mode only for all "H" ... OCR Scan
datasheet

8 pages,
395.78 Kb

SEEQ 52B33 72482 52B13 TA 8445 45558 52B33 we vqe 24 d 52B13/52B23/52B33 52B13H/52B23H/52B33H TEXT
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Abstract: M28C010 M28C010 36C16 36C16 36C16 36C16* 36C16 36C16 36C16 36C16* 36C16 36C16* 2804A 2816A 2864 28C65 28C65 52B13 52B13 2817A 52B33 52B33 38C16 38C16 36C16 36C16' 36C16 36C16 ... OCR Scan
datasheet

1 pages,
26.49 Kb

EEPROM cross 28C256 Intel 28HC256 2816 eeprom intel seeq 2816A eeprom 2817 EEPROM 2864 2817 EEPROM EEPROM 2864 ATMEL ATMEL Cross Reference intel 2864 Xicor 2864 Xicor 28C010 2864B AT28HC16 xicor 28C64 2864B AT28HC16 28C64 EEPROM 2864B AT28HC16 EEPROM 2864 INTEL 2864B AT28HC16 eeprom Cross Reference 2864B AT28HC16 Atmel eeprom Cross Reference 2864B AT28HC16 2816A eeprom 2864B AT28HC16 eeprom 2816 2864B AT28HC16 2864B 2864B AT28HC16 AT28HC16 AT28C64 AT28C64E AT28C64X AT28HC64 AT28PC64 AT28C64F AT28C2S6 AT28C256F AT28HC2S6 AT28HC256F AT28MC010 AT28HC191 AT28HC291 CY7292 CY7291 CY8C291 28HC16 28C291 28C191 28C64 28CP64 28C2S6 TMS27C291 TMS27C191 X2804A X2816A X2864A X2864AT X2864AB X2864H X28256 X28C256 XM28C010 X28C010 TEXT
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Abstract: 52B13/52B23/52B33 52B13H/52B23H/52B33H Electrically Erasable ROM PRODUCT DESCRIPTION Features , densities. The 52B13 and 52B13H are 2048 x 8 bit, the 52B23 52B23 and 52B23H 52B23H are 4096 x 8 bit, and the 52B33 52B33 and , . Pin Configurations 52B13/52B13H 52B23/52B23H 52B23/52B23H 52B33/S2B33H 52B33/S2B33H Vcc CCI. vrT ¡JVcc WE Aut. 2 J WE N/C , Respective Manufacturer 52B13/52B23/52B33 52B13H/52B23H/52B33H A.C. Operating Characteristics During Read , modes. In addition, high voltage (14-22 volts) may be used with the 52B13 for erase and write. All ... OCR Scan
datasheet

2 pages,
518.91 Kb

SEEQ 52B33 52B33 52B13 vqc 10 52B13/52B23/52B33 52B13H/52B23H/52B33H TEXT
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Abstract: 52B13/52B23/52B33 52B13H/52B23H/52B33H PR O D U C T D ES C R IPTIO N Electrically Erasable , d (-40° C to +85° C) te m p era ture ranges. Pin Configurations 52B13/52B13H 52B23/52B23H 52B23/52B23H , CC NO C O N N E C T 52B13/52B23/52B33 52B13H/52B23H/52B33H A.C. Operating Characteristics , the 52B13 fo r erase a n d write. A ll d evices have a c h ip clea r m od e in w h ich the entire m e m o ry is erased in a sin g le erase cycle. The 52B13 p e rfo rm s c h ip d e a r w ith a h ig h ... OCR Scan
datasheet

2 pages,
212.22 Kb

52B13/52B23/52B33 52B13H/52B23H/52B33H TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
No abstract text available
/download/65545690-93998ZC/disk1.zip ()
Elektronikladen 14/01/1999 1280.47 Kb ZIP disk1.zip
No abstract text available
/download/96007490-94008ZC/disk1.zip ()
Elektronikladen 14/01/1999 1268.83 Kb ZIP disk1.zip
No abstract text available
/download/35631323-996047ZC/xapp764.zip ()
Xilinx 27/05/2004 9655.66 Kb ZIP xapp764.zip
No abstract text available
/download/6111223-996050ZC/xapp775.zip ()
Xilinx 26/08/2004 30899.35 Kb ZIP xapp775.zip
No abstract text available
/download/49318403-996020ZC/xapp663.zip ()
Xilinx 23/08/2004 21918.22 Kb ZIP xapp663.zip
No abstract text available
/download/70419997-996008ZC/xapp640.zip ()
Xilinx 30/07/2002 9501.22 Kb ZIP xapp640.zip