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52b13 Datasheet

Part Manufacturer Description PDF Type
52B13-200 Seeq Technology Electrically Erasable ROM Scan
52B13-250 Seeq Technology Electrically Erasable ROM Scan
52B13-3 Seeq Technology 2K x 8 nMOS EPROM Memory Scan
52B13-350 Seeq Technology Electrically Erasable ROM Scan
52B13/H-200 Seeq Technology 2K x 8 nMOS EPROM Memory Scan
52B13H-200 Seeq Technology Electrically Erasable ROM Scan
52B13/H-250 Seeq Technology 2K x 8 nMOS EPROM Memory Scan
52B13H-250 Seeq Technology Electrically Erasable ROM Scan
52B13/H-350 Seeq Technology 2K x 8 nMOS EPROM Memory Scan
52B13H-350 Seeq Technology Electrically Erasable ROM Scan

52b13

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: byte erase, byte write, or chip erase mode of the 52B13/52B13H. Technology, Incorporated MD400006 , 52B13/52B13H 16K Electrically Erasable P R O M October 1988 Features Input Latches , Description SEEQ's 52B13 and 52B13H are 2048 x 8 bit, 5 volt elec trically erasable programmable read only , 's 5213, and Intel 2816/2816A. The 52B13 and 52B13H are ideal for applications that require a non-volatile , 52B13/52B13H A7 C I VCC A6 C A5 C *4 C *3 C l A8 l A9 I WE I 51 A? c A,C A0 C »0 c i/o -
OCR Scan
intel 2816 eeprom seeq 52b13 INTEL D 2816 seeq 2816 eeprom intel 2816 2816A eeprom 52B13/52B13H MD400006/C
Abstract: chip erase mode of the 52B13/52B13H. - _ _ CE (18) V,u V,H V,u V«. V,L V,H OE (20) V,L Don't , SEE , Description SEEQ's 52B13 and 52B13H are 2048 x 8 bit, 5 volt electrically erasable programmable read only , /2816A E2 Compatible MIL-STD-883 Class B Compliant Pin Configuration Block Diagram A6 t 52B13/52B13H , E T -4 6 -1 3 -2 7 - 52B13/52B13H These -
OCR Scan
DM52B13 intel 2816A eeprom 2816A SEEQ 5213 PER100 MD400104/- D0G3044
Abstract: Voltage WE mode) in the byte erase, byte write, or chip erase mode of the 52B13/52B13H. Technology , total number of write and erase cycle is not unlimited. The 52B13 and 52B13H have been designed for , power may be re duced by placing the 52B13 or 52B13H into a standby mode. Raising Chip Enable to a TTL , to operate these modes. To write into a particular loaction of the 52B13 or 52B13H, that byte must , is presented to the I/O lines. The 52B13H performs the same as the 52B13 except that the device byte -
OCR Scan
M5213 d52b13 M2816 M52B13/M52B13H E52B13/E52B13H M52B13 M52B13H E52B13H M2816/2816A
Abstract: of the 52B13/52B13H. Technology, Incorporated MD400007/C 6-8 M52B13/M52B13H E52B13 , the 52B13 or 52B13H into a standby mode. Raising Chip Enable to a TTL high will reduce the power , loaction of the 52B13 or 52B13H, that byte must first be erased. A memory location is erased by , Cycle 50 W 5 1 ns WE to Start of Read Cycle 2 US 52B13/52B13H High Voltage Write Specifications Except for the functional differences noted here, the 52B13 and 52B13H operate to the same -
OCR Scan
Abstract: ) in the byte erase, byte write, or chip erase mode of the 52B13/52B13H. Technology, Incorporated , ©G©Q 52B13/52B13H 16K Electrically Erasable P R O M October 1988 Description Features â  â  â  â  â  â  â  Input Latches SEEQ's 52B13 and 52B13H are 2 0 4 8 x 8 bit, 5 , ERASE) DATA OUTPUT (READ) 52B13/52B13H o f operating software in real-time) is made possible by this device. Applications for the 52B13 and 52B13H will be found in military avionics systems -
OCR Scan
Abstract:  5 «V 000701 r ^ PRELIMINARY DATA SHEET V 7 52B13/52B23/52B33 52B13H , , electrically erasable read only memories, E2ROMs, include three densities. The 52B13 and 52B13H are 2048 x 8 , C) temperature ranges. Pin Configurations 52B13/52B13H 52B23/52B23H 52B33/S2B33H CCI. 1 28 , of two operations for the 52B13. The 52B13 has a dual voltage detection circuit that allows the use , (Vcc = 5V ± 10%) 52B13/52B23/52B33 52B13H/52B23H/52B33H PRELIMINARY DATA SHEET "virgin" state of -
OCR Scan
52B33 52B23 memory SEEQ 52B33 WE VQE 24 E WE VQE 11 E WE VQE 23 E SEEQ 52B23 52B13/52B23/52B33 52B13H/52B23H/52B33H 52B23 52B23H 52B33H
Abstract: ' f !r>J 5 000701 PRELIMINARY DATA SHEET 52B13/52B23/52B33 52B13H/52B23H/52B33H , erasable read only memories, E2ROMs, include three densities. The 52B13 and 52B13H are 2048 x 8 bit, the , C) temperature ranges. Pin Configurations 52B13/52B13H 52B23/52 H 52B33/52B33H Vcc CCÇ 1 28 i , for the 52B13. The 52B13 has a dual voltage detection circuit that allows the use of either a TTL or a , erase, byte write, or chip erase mode of the 52B13. WE must be used in the TTL W/E mode only for all "H" -
OCR Scan
we vqe 24 d 45558 TA 8445 72482
Abstract: M28C010 36C16 36C16* 36C16 36C16* 36C16* 2804A 2816A 2864 28C65 52B13 52B13 2817A 52B33 38C16 36C16' 36C16 -
OCR Scan
28HC256 eeprom 2816 Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 2864B AT28HC16 AT28C64 AT28C64E AT28C64X AT28HC64
Abstract: 52B13/52B23/52B33 52B13H/52B23H/52B33H Electrically Erasable ROM PRODUCT DESCRIPTION Features , densities. The 52B13 and 52B13H are 2048 x 8 bit, the 52B23 and 52B23H are 4096 x 8 bit, and the 52B33 and , . Pin Configurations 52B13/52B13H 52B23/52B23H 52B33/S2B33H Vcc CCI. vrT ¡JVcc WE Aut. 2 J WE N/C , Respective Manufacturer 52B13/52B23/52B33 52B13H/52B23H/52B33H A.C. Operating Characteristics During Read , modes. In addition, high voltage (14-22 volts) may be used with the 52B13 for erase and write. All -
OCR Scan
vqc 10 52BXX 52BXXH
Abstract: 52B13/52B23/52B33 52B13H/52B23H/52B33H PR O D U C T D ES C R IPTIO N Electrically Erasable , d (-40° C to +85° C) te m p era ture ranges. Pin Configurations 52B13/52B13H 52B23/52B23H , CC NO C O N N E C T 52B13/52B23/52B33 52B13H/52B23H/52B33H A.C. Operating Characteristics , the 52B13 fo r erase a n d write. A ll d evices have a c h ip clea r m od e in w h ich the entire m e m o ry is erased in a sin g le erase cycle. The 52B13 p e rfo rm s c h ip d e a r w ith a h ig h -
OCR Scan
Abstract: (V) V1H lin (V) Ci max (pF) VOL/ I VOL max (V/mA) VOH/ I VOH min (V/mA) Co max (pF) 52B13-3 SEEQ 0-70 4. 75-5. 25 80/30 0.8 2.0 10 0. 45/2.1 2. 4/0. 4 10 52B13/H-200 SEEQ 0-70 200 200 0 60 4- 5-5. 5 80/30 0.8 2.0 10 0. 45/2.1 2. 4/0. 4 10 52B13/H-250 SEEQ 0-70 250 250 0 70 4.5-5. 5 80/30 0.8 2.0 10 0. 45/2. 1 2. 4/0. 4 10 52B13/H-350 SEEQ 1-70 350 350 0 80 4. 5â'"5. 5 80/30 0.8 2.0 10 -
OCR Scan
2816A-350 seeq 2816A CI EEPROM 2816 B 2716 D EEPROM intel 2816A 2816A/AH-300 53B13/H-2G0 53B13/H-250 53B13/H-350 281BA 281BS-2 MSM2816A-35RS
Abstract: 2816AH 2817A 2817AH 52B13 52B13H 5516A 5517A 2764 SEEQ 2864 2864H 28C64 28C64A 28C65 27128 27C256 -
Original
AT28PC64 27512P TC571000D-15 TC571001D-15 TMS27256 M27512FI et2732 4827128 2716BDC 27C64 2864AE 2864BE 27C128 27H256
Abstract: ) (25) 52B13 5516A M2716 M2764A M27256 M2732A M27C1001(PLCC) (26) M27C2001(PLCC) (26 , /FLASH/NVRAM 2804A 2817AH 2864H(PLCC) (25) 28C256K(DIP) 28C64A(DIP) 38C16 52B13H 5516AH Accel Technologies
Original
7805CT MOC5010 ip1717 UA741CN op amp TL081P LM3524N A11-7 68881R A11-8 P1-13 A11-6 146805E2