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SN74S482FN Texas Instruments 4-BIT, BIT-SLICE MICROPROCESSOR, PQCC20 ri Buy
SN74S482J Texas Instruments 4-BIT, BIT-SLICE MICROPROCESSOR, CDIP20, 0.300 INCH, DIP-20 ri Buy
EL1516ISZ-T7 Intersil Corporation Dual Ultra Low Noise Amplifier; MSOP8, SOIC8; Temp Range: -40° to 85°C ri Buy


Catalog Datasheet Type PDF Document Tags
Abstract: DATA SHEET MOS INTEGRATED CIRCUIT µPD3737 PD3737 5150-BIT CCD LINEAR IMAGE SENSOR The µ PD3737 PD3737 is a 5150-bit high sensitivity CCD (Charge Coupled Device) linear image sensor which changes optical images to electrical signal. The µPD3737 PD3737 has high speed CCD register, so it is suitable for high resolution scanners and facsimiles which scan high definition document at high speed. FEATURES · Valid photocell 5150-bit · Photocell's pitch 7 µm · High response sensitivity Providing a response ... Original

16 pages,
195.62 Kb

UPD3737D 2Sc945 equivalent 74AC04 C500 CCD linear 22pin image sensor 22-pin nec linear ccd sensor UPD3571 PD3737 nec CCD LINEAR IMAGE SENSOR 2SA1005 IC-8925 5150-BIT PD3737 abstract
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Abstract: ICS950703 ICS950703 Integrated Circuit Systems, Inc. Programmable Timing Control HubTM for P4TM Recommended Application: Intel Tehema and Tehema-E Chipsets Output Features: · 4 Differential CPU Clock Pairs @ 3.3V · 2 - 3V MREF clocks for memory reference seeds, (separate single ended but 180 degrees out of phase) · 4 - 66MHz 3V66 output · 10 - 3V 33MHz PCI clocks · 2 - 48MHz clocks (180 degrees out of phase) · 2 - 14.318 reference output (180 degrees out of phase) Key Specificatio ... Original

24 pages,
154.32 Kb

ICS950703 3V66/PCI ICS950703 abstract
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Abstract: User's Manual µPD789467 PD789467 Subseries 8-Bit Single-Chip Microcontrollers µPD789462 PD789462 µPD789464 PD789464 µPD789466 PD789466 µPD789467 PD789467 µPD78F9468 PD78F9468 Document No. U15552EJ2V1UD00 U15552EJ2V1UD00 (2nd edition) Date Published January 2004 N CP(K) c Printed in Japan [MEMO] 2 User's Manual U15552EJ2V1UD U15552EJ2V1UD NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device opera ... Original

224 pages,
1725.35 Kb

BT 342 project U15373E uPD789462 uPD789464 uPD789466 uPD789467 uPD78F9468 789466 PD789467 PD789462 PD789464 PD789466 PD78F9468 PD789467 abstract
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Abstract: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: April 1st, 2010 Renesas Electronics Corporation ... Original

228 pages,
1511.14 Kb

789466 uPD789462 uPD789464 uPD789466 uPD789467 uPD78F9468 vlc00 datasheet abstract
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