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Part Manufacturer Description PDF & SAMPLES
TMS28F004AFT70BDCDL Texas Instruments 512KX8 FLASH 5V PROM, 70ns, PDSO40
TMS28F004AFT80BDCDL Texas Instruments 512KX8 FLASH 5V PROM, 80ns, PDSO40
BQ4015YMA-70 Texas Instruments 512KX8 NON-VOLATILE SRAM MODULE, 70ns, PDIP32
TMS27PC040-80FML Texas Instruments 512KX8 OTPROM, 80ns, PQCC32
TMS27PC040-100FML Texas Instruments 512KX8 OTPROM, 100ns, PQCC32
TMS27PC040-150FML Texas Instruments 512KX8 OTPROM, 150ns, PQCC32

512KX8

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 5V 512Kx32 FLASH 5V 512Kx8 FLASH 5V 512Kx8 FLASH 5V 512Kx8 FLASH 5V 512Kx8 FLASH 5V 512Kx8 FLASH 5V ACT-F512K32N060F5Q ACT-F512K32N070F5Q ACT-F512K32N090F5Q , 5V 512Kx8 FLASH 5V 512Kx8 FLASH 5V 512Kx8 FLASH 5V 512Kx8 FLASH 5V 512Kx8 FLASH 5V 512Kx8 FLASH 5V ACT-S128K32C017P7QR 128Kx32 SRAM 5V ACT-S128K32C020P7QR , ACT-S128K32N017F2Q 5 of 66 512Kx8 FLASH 128Kx32 SRAM 5V 32 DIP .600 32 CFP .405 32 CFP .405 32 -
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57C256F-55 WS512K32N-20H1Q AS27C256-20JM WF1M32B-100G2UM3 qp7c199 ACT-S512K32N-017P7Q QP7C1009B-20DMB IDT71256L25TCB 57C256F-70 ACT-E128K32C120P7Q ACT-E128K32C140P7Q ACT-E128K32C150P7Q ACT-E128K32C200P7Q
Abstract: Now Now Now Now Now Now Now Now Now Now Now Now Now 1M x 4 1M x4 1M x4 5 12 K x8 5 12 K x8 512KX8 512KX8 5 12 K x8 512KX8 512KX8 512K X 8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512K X 8 512KX8 512KX8 512Kx8 512KX9 512KX9 512K X 9 512KX9 512KX9 -
OCR Scan
KM48V512ALLZ KM49C512AT 28-pin SOJ KM44V1000BLV KM44V1000BLVR KM44V1000BLLP KM44V1000BLLJ KM44V1000BLLZ KM44V1000BLLT
Abstract: -9JH 2M* 256Kx8 uPD442000LGU-C15X-9JH 2M* 256Kx8 uPD444000Lxx-B70X-xxx 4M 512Kx8 uPD444000Lxx-B70X-xxx 4M 512Kx8 uPD444000Lxx-xxx-B70X 4M 512Kx8 uPD444000Lxx-B85X-xxx 4M 512Kx8 uPD444000Lxx-B85X-xxx 4M 512Kx8 uPD444000Lxx-xxx-B85X 4M 512Kx8 uPD444000Lxx-C10X-xxx 4M 512Kx8 uPD444000Lxx-C10X-xxx 4M 512Kx8 uPD444000Lxx-xxx-C10X 4M 512Kx8 uPD444000Lxx-C12X-xxx 4M 512Kx8 uPD444000Lxx-C12X-xxx 4M 512Kx8 uPD444000Lxx-xxx-C12X 4M 512Kx8 uPD444000Lxx-D12X-xxx 4M 512Kx8 uPD444000Lxx-D12X-xxx 4M 512Kx8 uPD444000Lxx-xxx-D12X 4M 512Kx8 uPD444000Lxx-D15X-xxx 4M -
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uPD43256 UPD43256BGU-70L UPD442000LGU-B70X9JH PD43256BGU-70LL PD43256BGW-A10X-9JL PD43256BGW-A12X-9JL PD43256BGW-B12X-9JL PD43256BGW-B15X-9JL PD431000AGW-70LL
Abstract: .315 512Kx8, 256Kx16, 128Kx32 . 327 512Kx8r 256Kx16 , .67 512Kx8,256Kx16, 1 2 8 K x 3 2 . 73 512Kx8,256Kx16, 1 2 8 K x 3 2 .83 512Kx8, 256Kx16, 1 2 8 K x 3 2 .93 512Kx8, 256Kx16, 1 2 8 K x 3 2 .99 512Kx8, 256Kx16, 1 2 8 K x 3 2 .105 1Mx8, 5 -
OCR Scan
DP5Z
Abstract: 10 ns available in Q1/01 512Kx8 AS7C4096 12/15/20 SOJ (36), TSOP2 (44) Production , 10 ns available in Q1/01 512Kx8 AS7C34096 10/12/15/20 SOJ (36), TSOP2 (44) Production , AS6VA5128 512Kx8 1.65-5.5 CSP (48/36), TSOP2 (32), TSOP1 (32), sTSOP1(32), SOP (32) 1.65-3.6 , ), SO (44) Production Flash 3V Flash EEPROM Density 4M 8M 4 Org 512Kx8/ 256Kx16 1M × , 64Kx16 AS7C31026 64Kx16 3V AS7C4096 512Kx8 AS7C34098 256Kx16 AS7C34098 256Kx16 Alliance Semiconductor
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M5M418165 NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 Q4--2000 8/256K 8/512K B-2800 SE-597
Abstract: *, 85, 100, 120, 150 41 3 M egabit 384Kx8, 128Kx24 2 0 *, 25, 30, 35, 45 51 512Kx8 512Kx8 2 5 *, 35, 45, 55, 70, 85 8 5 *, 100, 120, 150 61 67 512Kx8, 256Kx16, 128Kx32 2 0 , 512Kx8, 256Kx16, 128Kx32 7 0 *, 85, 100, 120, 150 83 5 1 2Kx8, 256Kx16, 128Kx32 512Kx8, 2 5 6 K x l6 , 128Kx32 512Kx8, 256Kx16, 128Kx32 2 0 *, 25, 30, 35, 45 2 0 *, 25, 30, 35, 45 7 0 *, 85 , l6 128Kx8, 6 4 K x l6 , 32Kx32 256Kx8, 128Kx16 512Kx8, 2 5 6 K x l6 , 128Kx32 !M x 8 , 512Kx6 -
OCR Scan
48-PIN PS128M PS3232V DPS128X16CJ3/BJ3 PS128X16CH DPS128X16Y3 PS128X16H
Abstract: . 49 D P S 5 1 2 S 8 A P . 512Kx8, 25 - 70ns, DIP . 55 DPS512S8EJ4/EL4/RJ4/RL4 . . . ,512Kx8, 2 0 -45ns, SOJ .61 D P S 5 1 2 S 8 H 4 . 512Kx8, 7 0 - 150ns, S O P . 67 D P S 5 1 2 S 8 P /P L /P L L . 512Kx8, 7 0 - 150ns, D I P . 73 D P S 5 1 2 S 8 U .512Kx8, 7 0 - 150ns, S I P -
OCR Scan
dram zip 256kx16 DPS1MS16P/XP 24/512K 16/256K DPS256S32W DPS256X32L/W 32/512K
Abstract: , Uniform Sector FLASH 512Kx8, 5V FLASH 512Kx8, 256Kx16 FLASH 1Mx8, 512Kx16 FLASH 1Mx8, 512Kx16 FLASH , FLASH 512Kx8, 256Kx16, 3Volts FLASH 1Mx8, 512Kx16, 3Volts SRAM High Speed 128Kx8 FLASH 512K x 8, 3.3 , , 5Volts FLASH 512Kx8, 5V FLASH 512K x 8 FLASH 512K x 8, 3.3 Volt FLASH 512K x 8, 3.3V, 40-pin FLASH , , 2MX8 FLASH 1MX16, 2MX8 FLASH 512Kx8, 256Kx16, 3Volts FLASH 512Kx8, 256Kx16, 3Volts FLASH 1Mx8 , , Uniform Sector FLASH 512Kx8, 5V FLASH 512Kx8, 256Kx16 FLASH 512Kx8, 256Kx16 FLASH 1Mx8, 512Kx16 FLASH AMIC Technology
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A29F002 um61256 um611024 SRAM 64KX8 5V TC51V4265 rom at29c010 PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B
Abstract: PRELIMINARY SPACE ELECTRONICS INC. 16Mb SRAM SPACE PRODUCTS 89C1632DRP 89C1632DRH 89C1632DRP Functional Block Diagram FLOW THRU EDAC CD[7:0] EDAC0 [7:0] 512k x 32 SRAM DATA BITS MD [31:0] 512kx8 CD[15:8] 512kx8 512kx8 512kx8 EDAC1 [15:8] CHECK BITS CD[23:16] EDAC2 [23:16] CD[31:24] EDAC3 [31:24] 89C1632DRP PIN DIAGRAM BIT ERROR 512kx8 512kx8 512kx8 512kx8 I/0 Module 1 Memory I/O D[7:0] CB [31:0] I/O Module 2 Space Electronics
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TM5004 TM5005 512K x 8 bit sram 32 pin SRAM edac Static Random Access Memory SRAM 16MB SRAM 89C1632DRP/89C1632DRH 89C1632DRP/
Abstract: ^EDI ELECTRONIC DESIGNS. INC EDI88512CA-RP 512Kx8 Ruggedized Plastic Static Ram Features 512Kx8 bit CMOS Static Random Access Memory â'¢ Access Times: 1T, 20 and 25ns â'¢ Data Retention , 'Industrial Temperature Only Pin Configurations and Block Diagram 1 22 A12 3 21 A11 ] 20 A10 ] 19 NC 512Kx8 Static RAM CMOS, Monolithic EDI's ruggedized plastic 512Kx8 SRAM allows the user to capitalize on the , use on EDI's fully compliant 512Kx8 SRAMs. EDI fully characterizes devices to determine the proper -
OCR Scan
EDI88512LPA17MI 75B7 EDI88512LPA EDI885 36/96ECO EDIBB512CA-RP 6/96ECM7587 EDI88512CA20MM EDI88512CA25MM
Abstract: -40°C or below and using dense memories such as 512Kx8s. EDI's ruggedized plastic SOJ is footprint , EIEO RO M C 0BM3N& M C. %ED l 512Kx8 Static RAM F ea tu re s 512Kx8 bit CMOS Static Random Access Memory · Access Times: 17*, 20 and 25ns TM EDI88512CA-RP 512Kx8 Ruggedized Plastic Static Ram CMOS, Monolithic EDI's ruggedized plastic 512Kx8 SRAM allows the user to capitalize on the , for use on EDI's fully compliant 512Kx8 SRAMs. EDI fully characterizes devices to determine the proper -
OCR Scan
EM 319 EDI88512CA17MI EDI88512CA20MI EDI88512LPA20MM EDI88512LPA25MM EDI88512CA25MI EDI88512LPA20MI
Abstract: Sector FLASH 128Kx8, Uniform Sector FLASH 512Kx8, 5V FLASH 512Kx8, 256Kx16 FLASH 1Mx8, 512Kx16 FLASH , 8, 3.3 Volt FLASH 512K x 8 FLASH 1MX16, 2MX8 FLASH 2MX16, 4MX8 FLASH 512Kx8, 256Kx16, 3Volts FLASH 1Mx8, 512Kx16, 3Volts FLASH 1MX16, 2MX8 FLASH 512Kx8, 256Kx16, 3Volts FLASH 1Mx8, 512Kx16 , Sector FLASH 128Kx8, Uniform Sector FLASH 256K x8, 5Volts FLASH 512Kx8, 5V FLASH 512K x 8 FLASH 512K , -pin FLASH 1MX16, 2MX8 FLASH 1MX16, 2MX8 FLASH 1MX16, 2MX8 FLASH 1MX16, 2MX8 FLASH 512Kx8, 256Kx16 AMIC Technology
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hynix hy57v281620 hy57v641620 cross reference 256k x8 SRAM WINBOND Serial flash cross reference Samsung EOL 28F160S3 PD442012L-XB PD444012L-B PD4504161 28F160S3/B3/C3 AM29DL162C/D AM29DL163C/D
Abstract: . 105 512Kx8-bit, 3.3V, 70/85/100ns. 0 C~70 C ' . 117 512Kx8-bit, 3.3V, 70/85/100ns, -40 0 8 5 C .117 512Kx8-bit, 3.0V, 70/85/100ns, 0 0 7 0 T : .117 512Kx8-bit, 3.0V, 70/85/100ns, - 4 0 t ~ 8 5 t . 117 F u ll CM O S L , . 163 512Kx8-bit, 3.0V, 70/85/100ns, 0 t > 7 0 t . 177 512Kx8-bit, 3.0V, 70/85/100ns, - 4 0 t ~ 8 5 t . 177 512Kx8-bit, 2.5V, 85/100/120ns, 0 C -7 0 C -
OCR Scan
256KX8 SRAM 25nS 256Kx8bit HY62U256 HY6264A HY6264A-I 256K- HY62256A HY62256A-I HY62256B
Abstract: MEMORY ICS 2. PRODUCT GUIDE Density Power Supply 4M bit 5V±10% FUNCTION GUIDE Part Number KM23C4000C(G) KM23C4100C(G/T) KM23C410OCET KM23C4200C Organization 512Kx 8 512Kx8/256Kx16 512Kx8/256Kx16 ! 512Kx8/256Kx16 512Kx 8 512Kx8/256Kx16 512Kx8/256Kx16 1M x8 1Mx8 1M X8/512K x16 1M X8/512K x16 1M X8/512K x16 1M X8/512K x16 1M x8 1M X8/512K x16 1M X8/512K x16 2M x8 2 M X8/1M x16 2 M X8/1M x16 Speed 100 100 100 100 150 150 150 100 120 100 120 120 100/50 150 150 Features . Package 32 DIP -
OCR Scan
KM23C16005AG 44-TSOP2 44TSOP2 DIP/SOP/44TSOP2 KM23V4000C KM23V4100C KM23V41OOCET 42DIP/ 44SOP
Abstract: e le c tr o n ic designs, inc. W 3 X EDI88512CA-RP 512Kx8 Ruggedized Plastic Static Ram 512m Static RAM Features 512Kx8 bit CMOS Static Random Access Memory · · · · Access Times: 17*, 20 and 25ns CMOS, Monolithic EDI's ruggedized plastic 512Kx8 SRAM allows the user to capitalize on , developed for use on EDI's fully compliant 512Kx8 SRAMs. EDI fully characterizes devices to determine the , . EDI88512CA-RP 512Kx8 Ruggedized Plastic Static Ram 2 EDÌ88512CA-RP Rer. 3 6 * EC M 75B7 EDI88512CA-RP TM -
OCR Scan
IC 7587 EDI88512LPA25MI 18VA/V EDI88512CA-RPR
Abstract: FSRAM 256kx16 1Mx4 HM628511H 4Mbit SRAM FSRAM 512kx8 HM628511HI HM628512A 4Mbit 4Mbit SRAM SRAM FSRAM LPSRAM 512kx8 512kx8 HM628512BFP HM628512BI 4Mbit 4Mbit SRAM SRAM LPSRAM LPSRAM 512kx8 512kx8 HM62G18256 HM62G36128 HM62V16256B HM62V16258B HM62V8512B , 256kx16 512kx8 4Mx1 256kx16 256kx16 Access PackageTime Typemax Pincount [ns] 10 CP-44 12 TTP-44 15 12 , EEPROM 256kx16 256kx16 256kx16 1Mx4 512kx8 512kx8 512kx8 512kx8 256kx18 128kx36 16Mx8 256x8 8Mx8 8Mx8 -
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BP-119 HB289008A4 hn29w256 SRAM 16k*8 SRAM 4KX8 TFP-32 HB286008A3 HB286008C3 HB286015A3 HB286030A3 HB286030C3 HB286045A3
Abstract: .79 2Mx8/1Mx16/512Kx32, 1 7 - 25ns, ZIP/SIMM.85 512Kx8, 25 - 70ns, D IP . 91 512Kx8, 2 0 -45ns, S O ).97 512Kx8, 70- 150ns, D IP .105 512Kx8, 70 - , UVEPROM PRODUCTS DPV 12832V A . DPV256S32W . 512Kx8 , . 512Kx8/256Kx16/128Kx32, 150 - 250ns, P G A . 137 1Mx8/512Kx16/256Kx32 -
OCR Scan
1mx8 256KX8 SIMM 512kx8 dram simm DPS 119 DPS256S36LK DPS256S8AP DPS256S8EJ4/EL4/RJ4/RL4 DPS256S8P/DPS256S8PL/DPS256S8PLL DPS256X24P DPS256X32L/DPS256X32W
Abstract: 59 59 59 63 63 63 128KX8 128Kx8 128Kx8 256Kx8 512Kx8 512Kx8 512Kx8 512Kx8 512Kx8 512Kx8 512Kx8 512Kx8 512Kx8 6 W DÌ ELECTRONIC DESIGNS INC. Selector Guide Organization Part No , 256Kx8 EDI8M8257C 32 pii Dip 4M 512Kx8 EDI88512C 256Kx16 Dip/Zip/CSOJ EDI88S12CA Dip/Zip -
OCR Scan
32 PIN EDI88130 128KX32 EDI7C32128C-JM EDI7M32128C-GB EDI5C32128C-JM EDI5M32128C-GB 64KX32
Abstract: FLASH 128Kx8, Uniform Sector FLASH 512Kx8, 5V FLASH 512Kx8, 256Kx16 FLASH 1Mx8, 512Kx16 FLASH 1Mx8 , Volt FLASH 512K x 8 FLASH 1MX16, 2MX8 FLASH 2MX16, 4MX8 FLASH 512Kx8, 256Kx16, 3Volts FLASH 1Mx8, 512Kx16, 3Volts FLASH 1MX16, 2MX8 FLASH 512Kx8, 256Kx16, 3Volts FLASH 1Mx8, 512Kx16, 3Volts SRAM High , Sector FLASH 128Kx8, Uniform Sector FLASH 256K x8, 5Volts FLASH 512Kx8, 5V FLASH 512K x 8 FLASH 512K , 512Kx8, 256Kx16, 3Volts FLASH 512Kx8, 256Kx16, 3Volts FLASH 1Mx8, 512Kx16, 3Volts FLASH 1Mx8, 512Kx16 AMIC Technology
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PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A AM29DL164C/D AM29F002B AM29F010 AM29F010B AM29F040B AM29F400B
Abstract: EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION General Description The EM39LV040 is a , . (07.22.2004 V1.0) Page 1 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION Functional , .0) Page 2 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION 32-Lead TSOP 1 2 3 4 5 , without further notice. (07.22.2004 V1.0) Page 3 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory , . (07.22.2004 V1.0) Page 4 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION EM39LV040 ELAN Microelectronics
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AC39LV040 CD 4060 PIN DIAGRAM 0040H 1005B
Abstract: WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES n Access Times 15, 17, 20, 25, 35, 45, 55ns n 32 pin, Rectangular Ceramic Leadless Chip Carrier (Package 601) n MIL-STD-883 Compliant Devices Available n Commercial, Industrial and Military Temperature Range n Revolutionary, Center Power/Ground Pinout JEDEC Approved n 5 Volt Power Supply ·36 lead Ceramic SOJ (Package 100) n Low Power CMOS ·36 lead Ceramic Flat Pack (Package 226) n Low Power Data Retention for White Electronic Designs
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smd mark 601 8 pin 512k x 8 SRAM CERAMIC LEADLESS CHIP CARRIER CLCC 28 08HTX 09HTX 10HTX 14HTX 05HZX 06HZX
Abstract: EDI7F33512V 512Kx32 FLASH DESCRIPTION The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate. The modules offer access times between 80 and 120ns allowing for operation of high-speed microprocessors without wait states. FIG. 1 BLOCK DIAGRAMS EDI7F33512V-BNC: 512Kx32 80 PIN SIMM EØ\ A0-A18 G\ 512K X8 W0\ 512K X8 W1 White Electronic Designs
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DQ24-DQ31 DQ16-DQ23 DQ8-DQ15 DQ0-DQ31 EDI7F33512V80BNC EDI7F33512V90BNC
Abstract: White Electronic Designs EDI7F33512V 512Kx32 FLASH FEATURES 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM29LV004T Flash Device Fast Read Access Time - 80ns 3V Only Reprogramming Flexible, Sector Architecture One 16Kbyte, two 8Kbyte, one 32Kbyte and seven 64Kbyte sectors DESCRIPTION The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are White Electronic Designs
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512k x 8 chip block diagram AMD 705 3512V120BNC EDI7F233512V80BNC EDI7F233512V90BNC EDI7F233512V100BNC EDI7F233512V120BNC EDI7F433512V80BNC
Abstract: , Uniform Sector FLASH 512Kx8, 5V FLASH 512Kx8, 256Kx16 FLASH 1Mx8, 512Kx16 FLASH 1Mx8, 512Kx16 FLASH , FLASH 512Kx8, 256Kx16, 3Volts FLASH 1Mx8, 512Kx16, 3Volts SRAM High Speed 128Kx8 FLASH 512K x 8, 3.3 , , 5Volts FLASH 512Kx8, 5V FLASH 512K x 8 FLASH 512K x 8, 3.3 Volt FLASH 512K x 8, 3.3V, 40-pin FLASH , , 2MX8 FLASH 1MX16, 2MX8 FLASH 512Kx8, 256Kx16, 3Volts FLASH 512Kx8, 256Kx16, 3Volts FLASH 1Mx8 , , Uniform Sector FLASH 512Kx8, 5V FLASH 512Kx8, 256Kx16 FLASH 512Kx8, 256Kx16 FLASH 1Mx8, 512Kx16 FLASH White Electronic Designs
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M29F040B 512K WED7F2325ZXEBSN15C 325ZXEBSN WED7F325ZXEBSN WED7F2325ZXEBSN WED7F4325ZXEBSN A0-18
Abstract: EDI7F33512V 512Kx32 Flash 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate. Block Diagrams EDI7F33512V-BNC 512Kx32 80 pin SIMM EØ\ A0-A18 G\ 512K X8 512K X8 DQ8-DQ15 512K X8 DQ16-DQ23 512K X8 The modules offer access times between 100 and 120ns allowing for operation of high-speed White Electronic Designs
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EDI7F33512C AM29F040 EDI7F33512C-BNC AM290F040 EDI7F33512C80BNC EDI7F33512C90BNC
Abstract: Now Now Now Now Now Now Now Now Now Now Now Now Now 1M x 4 1M x4 1M x4 5 12 K x8 5 12 K x8 512KX8 512KX8 5 12 K x8 512KX8 512KX8 512K X 8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512K X 8 512KX8 512KX8 512Kx8 512KX9 512KX9 512K X 9 512KX9 512KX9 Electronic Designs
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EDI7F33512V100BNC EDI7F33512V120BNC 050TYP EDI7F433512V100BNC EDI7F433512V120BNC 01581USA
Abstract: WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES â'¢ 32 pin, Rectangular Ceramic Leadless Chip Carrier (Package 601) ï'  Access Times 15, 17, 20, 25, 35, 45, 55ns ï'  MIL-STD-883 Compliant Devices Available â'¢ Commercial, Industrial and Military Temperature Range ï'  Revolutionary, Center Power/Ground Pinout JEDEC Approved â'¢ 5V Power Supply â'¢ 36 lead Ceramic SOJ , '¢ www.microsemi.com/pmgp www.whiteedc.com WMS512K8-XXX Document Title 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 White Electronic Designs
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e03g M29F040 DQ8-15 DQ16-23 DQ24-31
Abstract: White Electronic Designs WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES 32 pin, Rectangular Ceramic Leadless Chip Carrier (Package 601) Access Times 15, 17, 20, 25, 35, 45, 55ns Commercial, Industrial and Military Temperature Range MIL-STD-883 Compliant Devices Available Revolutionary, Center Power/Ground Pinout JEDEC Approved 5V Power Supply Low Power CMOS 36 lead Ceramic SOJ (Package 100) Low Power Data Retention for Battery Back-up Operation 36 White Electronic Designs
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EDI7F233512V-BNC EDI7F43351 FO-00342R1
Abstract: WMS512K8-XXX HI-RELIABILITY PRODUCT 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES s 32 pin, Rectangular Ceramic Leadless Chip Carrier (Package 601) s Access Times 15, 17, 20, 25, 35, 45, 55ns s MIL-STD-883 Compliant Devices Available s Revolutionary, Center Power/Ground Pinout JEDEC Approved · 36 lead Ceramic SOJ (Package 100) · 36 lead Ceramic Flat Pack (Package 226) s Commercial, Industrial and Military Temperature Range s 5 Volt Power Supply s Low Power CMOS s Low Power Data Retention White Electronic Designs
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07HXX 08HXX 09HXX 10HXX 14HXX
Abstract: CIRCUIT WE# VSS 512Kx8 MEMORY ARRAY Chip Enable Inputs VCC DECODER Data Inputs White Electronic Designs
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SRAM flatpack 07HZX 08HZX 09HZX 10HZX 14HZX 05HXX
Abstract: Sector FLASH 128Kx8, Uniform Sector FLASH 512Kx8, 5V FLASH 512Kx8, 256Kx16 FLASH 1Mx8, 512Kx16 FLASH , 8, 3.3 Volt FLASH 512K x 8 FLASH 1MX16, 2MX8 FLASH 2MX16, 4MX8 FLASH 512Kx8, 256Kx16, 3Volts FLASH 1Mx8, 512Kx16, 3Volts FLASH 1MX16, 2MX8 FLASH 512Kx8, 256Kx16, 3Volts FLASH 1Mx8, 512Kx16 , Sector FLASH 128Kx8, Uniform Sector FLASH 256K x8, 5Volts FLASH 512Kx8, 5V FLASH 512K x 8 FLASH 512K , -pin FLASH 1MX16, 2MX8 FLASH 1MX16, 2MX8 FLASH 1MX16, 2MX8 FLASH 1MX16, 2MX8 FLASH 512Kx8, 256Kx16 White Electronic Designs
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06HXX
Abstract: WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES â'¢ 32 pin, Rectangular Ceramic Leadless Chip Carrier (Package 601) ï'  Access Times 15, 17, 20, 25, 35, 45, 55ns ï'  MIL-STD-883 Compliant Devices Available â'¢ Commercial, Industrial and Military Temperature Range ï'  Revolutionary, Center Power/Ground Pinout JEDEC Approved â'¢ 5V Power Supply â'¢ 36 lead Ceramic SOJ , Document Title 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 Revision History Rev # History Release Alliance Memory
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AS6C4008 AUG09 AS6C4008-55PCN AS6C4008-55SIN AS6C4008-55TIN AS6C4008-55STIN
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