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RN55D5103FB14 Vishay Dale Metal Film Resistors 1/8watt 510Kohms 1% 100ppm visit Digikey Buy
RNV14FTL510K SEI Stackpole Electronics Inc High Voltage Metal Film Resistor, 0.25W, 1%, 200ppm, 510Kohm visit Digikey Buy
744C083514JPTR CTS Corporation RES ARRAY 510KOHM 8TERM 4RES SMD visit Digikey Buy
743C083514JPTR CTS Corporation RES ARRAY 510KOHM 8TERM 4RES SMD visit Digikey Buy
CRCW0603510KFKTA Vishay Dale Thick Film Chip Resistor; Series:CRCW; Resistance:510kohm; Resistance Tolerance:+/- 1%; Power Rating:0.1W; Operating Temperature Range:-55 C to +125 C; Resistor Element Material:Thick Film; Voltage Rating:75VDC RoHS Compliant: No visit Digikey Buy
CRCW0805510KFKTA Vishay Dale Thick Film Chip Resistor; Series:CRCW; Resistance:510kohm; Resistance Tolerance: 1%; Power Rating:0.125W; Operating Temperature Range:-55 C to ? C; Resistor Element Material:Thick Film; Voltage Rating:150VDC RoHS Compliant: No visit Digikey Buy

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Part : P85-10KOHM-10% Supplier : - Manufacturer : Chip One Exchange Stock : 1,849 Best Price : - Price Each : -
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510kohm

Catalog Datasheet MFG & Type PDF Document Tags

2SK583

Abstract: CDRH4D18C VIN=VDD=VCE,L=22uH(CDRH4D18C) SD:XBS104S14R,CIN=CL=4.7uF(Ceramic) CFB=620pF(Ceramic),RFB1=510kohm,RFB2 , =22uH(CDRH4D18C) SD:XBS104S14R,CIN=CL=4.7uF(Ceramic) CFB=620pF(Ceramic),RFB1=510kohm,RFB2=30kohm 19.0 Output , =18V VIN=VDD=VCE,L=22uH(CDRH4D18C) SD:XBS104S14R,CIN=CL=4.7uF(Ceramic) CFB=620pF(Ceramic),RFB1=510kohm,RFB2 , 60 VIN=VDD=VCE,L=22uH(CDRH4D18C) SD:XBS104S14R,CIN=CL=4.7uF(Ceramic) CFB=620pF(Ceramic),RFB1=510kohm , =15V VIN=VDD=VCE=3.6V,L :CDRH4D18C SD:XBS104S14R,CIN=CL=4.7uF(Ceramic) CFB=620pF(Ceramic),RFB1=510kohm,RFB2
Torex Semiconductor
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XC9119D10A 2SK583 NR3010 VLF3010 XC9119D10AMR ETR0408
Abstract: ) VIN=VDD=VCE,L=22uH(CDRH4D18C) SD:XBS104S14R,CIN=CL=4.7uF(Ceramic) CFB=620pF(Ceramic),RFB1=510kohm,RFB2 , ),RFB1=510kohm,RFB2=30kohm 19.0 Output voltage: VOUT(V) 16.0 Output voltage: VOUT(V) VIN , =620pF(Ceramic),RFB1=510kohm,RFB2=36kohm 100 90 80 70 60 50 40 30 20 10 0 6V 5V Efficiency , ),RFB1=510kohm,RFB2=30kohm 100 90 80 70 60 6V 5V 4.2V VIN=2.5V 50 40 30 20 10 0 , =4.7uF(Ceramic) CFB=620pF(Ceramic),RFB1=510kohm,RFB2=36kohm L=4.7uH 100 Load current: IOUT (mA) VOUT Torex Semiconductor
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JTR0408-009

Step-Up

Abstract: XC9119 =4.7uF(Ceramic) CFB=620pF(Ceramic),RFB1=510kohm,RFB2=36kohm VIN=5V 15.5 15.0 VIN=2.5V,3V VIN , =620pF(Ceramic),RFB1=510kohm,RFB2=30kohm 19.0 Output voltage: VOUT(V) 16.0 1 Load current: IOUT (mA , ) CFB=620pF(Ceramic),RFB1=510kohm,RFB2=36kohm 100 90 80 70 60 50 40 30 20 10 0 6V 5V , =4.7uF(Ceramic) CFB=620pF(Ceramic),RFB1=510kohm,RFB2=30kohm 6V 5V 4.2V VIN=2.5V 50 40 30 20 10 0 , ) VIN=VDD=VCE=3.6V,L :CDRH4D18C SD:XBS104S14R,CIN=CL=4.7uF(Ceramic) CFB=620pF(Ceramic),RFB1=510kohm,RFB2
Torex Semiconductor
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Step-Up XC9119
Abstract: ,CIN=CL=4.7uF(Ceramic) CFB=620pF(Ceramic),RFB1=510kohm,RFB2=36kohm VIN=5V 15.5 15.0 VIN=2.5V,3V , =4.7uF(Ceramic) CFB=620pF(Ceramic),RFB1=510kohm,RFB2=30kohm 19.0 Output voltage: VOUT(V) 16.0 1 , =22uH(CDRH4D18C) SD:XBS104S14R,CIN=CL=4.7uF(Ceramic) CFB=620pF(Ceramic),RFB1=510kohm,RFB2=36kohm 100 90 80 , VIN=VDD=VCE,L=22uH(CDRH4D18C) SD:XBS104S14R,CIN=CL=4.7uF(Ceramic) CFB=620pF(Ceramic),RFB1=510kohm,RFB2 , :CDRH4D18C SD:XBS104S14R,CIN=CL=4.7uF(Ceramic) CFB=620pF(Ceramic),RFB1=510kohm,RFB2=36kohm L=10uH 50 Torex Semiconductor
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SPY0030A

Abstract: VOICE RECORDER circuits GPCR06B OP1O 2.2K 1K PLAY_BUSY PLAY (R1=5.1Kohm, R2=510Kohm C1=150pf is suggested , PLAY (R1=5.1Kohm, R2=510Kohm C1=150pf is suggested) AUDP 2K GPCR06B C1 R2 R1 CE , 0.1µF~1µF TEST RECO (R1=5.1Kohm, R2=510Kohm C1=150pf is suggested) AUDP SPY0012B
Generalplus Technology
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SPY0030A VOICE RECORDER circuits ic VOICE RECORDER playback system 14 pin ic recorder voice VOICE RECORDER IC voice recorder and playback circuit SPCR06B

10kohm resistor

Abstract: motherboard at t21 . Where "pull up" is used, use a 5-10K-ohm resistor to VCC/VDD. For 8154 IC: Pin name Pin Requested , primary PCI bus willl need to have pullups in the 5-10Kohm range.* Page 3 AN60 05/05/03 S_AD
Pericom Semiconductor
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PI7C8154 10kohm resistor motherboard at t21 Motherboard t21 PICMG 2.0 R3.0 UPS schematics pci slot pinout
Abstract: B r o F OP1O ly n 47µF n e AVDD 22 µF PLAY (R1=5.1Kohm, R2=510Kohm C1 , RECLED PLAY (R1=5.1Kohm, R2=510Kohm C1=150pf is suggested) ACIN O AUDN 2K MIC , altering sampling frequency VDD AVDD OPT (R1=5.1Kohm, R2=510Kohm C1=150pf is suggested Sunplus Technology
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Abstract: -5 S 5 .0 500 0.47 ohrtHOOkohm 1 ,0 0 0 1 .0 0.1 ohm~510kohm 2 .0 350 ±350 0.22ohm-470kohm J (± 5 % ) E -
OCR Scan
RSI-112 R2100M
Abstract: and 5.76kohm 5.9kohm MC0603SAF5103T5E MC0603SAF5110T5E 510kohm 511 ohm MC0603SAF5110T5E , 562kohm 590kohm 51.1ohm 51.1ohm 510kohm bv Each in Tape and by Each in Taoe and by Each in -
OCR Scan
03SAF5112T5E MC0603SAF511JT5E MC0603SAF5230T5E MC0603SAF5360T5E MC0603SAF5492T5E MC0603SAF5622T5E
Abstract: 20pF Co = Cg = 20pF XO U T pin to -3 .6 V REXT=510kohm V V -0 .2 Fig.2 Fig.3 Fig , =32.768kHz Co = Cg = 20pF Co = Cg = 20pF Co = Cg = 20pF Co = Cg = 20pF XO U T pin to -3 .6 V REXT=510kohm -
OCR Scan
LC5812 3044B 3026B QIP80A

LCD TV SCHEMA

Abstract: srf 2497 =-2.9V XOUTpin 18 22 26 PF CR oscillation characteristics fCR VsS2=-2.3V to -3.6V REXT=510kohm 16 33 50 kHz , Cg = 20pF Fig.5 Co = Cg = 20pF Fig.3 Co = Cg = 20pF Fig.3 Co = Cg = 20pF Fig.3 XOUTpin -3.6V REXT=510kohm
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OCR Scan
LC5812H LCD TV SCHEMA srf 2497 lcd panel schema EVA-510 EVA510 EN2058A

schematic ic l6385

Abstract: IGBT DRIVER L6385 SCHEMATIC suggested resistor value is 5-10Kohm. [Vil Max = 1.5V, Vih Min = 3.6V] 3 HIN (*) I Low Side
STMicroelectronics
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AN994 L6385 L6386 L6387 L6384-5-6-7 schematic ic l6385 IGBT DRIVER L6385 SCHEMATIC IC 567 internal structure HC4046 st l6384 applications L6384 L638X

sck054

Abstract: THERMISTOR SCK054 VZ 9G C3,C6,C7 R1,R2 Component THER1 R 470Kohm 1/4W R 510Kohm 1/4W Thermistor
System General
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sck054 THERMISTOR SCK054 SCK-054 transformer ei28 UU10.5 inductor 8 dip smps ic sg6840 SG6840

IGBT DRIVER L6385 SCHEMATIC

Abstract: st l6384 applications suggested resistor value is 5-10Kohm. [Vil Max = 1.5V, Vih Min = 3.6V] 3 HIN (*) I Low Side
STMicroelectronics
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L6386 schematic L6385 datasheet 600v h-bridge gate drive schematics circuit L6386 application 3 phase inverter schematic diagram 300khz 600V mosfet driver IC D98IN828A

HC4046

Abstract: L6384 pulled up the suggested resistor value is 5-10Kohm. [Vil Max = 1.5V, Vih Min = 3.6V] 3 HIN
STMicroelectronics
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2A mosfet igbt driver stage 3 phase IGBT gate driver HCF4069UB an994 application note l6384, l6385, l6386 & l6387 application guide application note bootstrap half bridge converter L6384 application note

IGBT DRIVER L6385 SCHEMATIC

Abstract: st l6384 applications pulled up the suggested resistor value is 5-10Kohm. [Vil Max = 1.5V, Vih Min = 3.6V] 3 HIN
STMicroelectronics
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application note gate driver with bootstrap capacitor DIMMABLE Motor Driver Circuit schematic 12V l6387 recovery diode L6386 Phase Signal
Abstract: R7 (510kohm) between SS terminal and IN terminal. Since low level IDP is chosen, output voltage Rippl , Low High efficiency *Though the resistance value of 510k-ohm is the E24 series,If acquisition is Sanken Electric
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NR130

TH 2267 charger circuit diagram

Abstract: reduced still lower, Please add the resistance R7 (510kohm) between SS terminal and IN terminal. Since
Sanken Electric
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TH 2267 charger circuit diagram

ELECTRONIC BALLAST 36W circuit diagram

Abstract: philips electronic ballast 36W 10nF 100KOhm SD pin 0.47uF 510KOhm COM pin Additional Control Circuit to avoid striations
International Rectifier
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AN-1037 IR2167 ELECTRONIC BALLAST 36W circuit diagram philips electronic ballast 36W Ef25 core schematic lamp ballast siemens n27 T8/32W T8/36W AN1037
Abstract: =4.7uF(Ceramic) CFB=620pF(Ceramic),RFB1=510kohm,RFB2=36kohm VIN=5V 15.5 15.0 VIN=2.5V,3V VIN , =620pF(Ceramic),RFB1=510kohm,RFB2=30kohm 19.0 Output voltage: VOUT(V) 16.0 1 Load current: IOUT (mA , ) CFB=620pF(Ceramic),RFB1=510kohm,RFB2=36kohm 100 90 80 70 60 50 40 30 20 10 0 6V 5V , =4.7uF(Ceramic) CFB=620pF(Ceramic),RFB1=510kohm,RFB2=30kohm 6V 5V 4.2V VIN=2.5V 50 40 30 20 10 0 , ) VIN=VDD=VCE=3.6V,L :CDRH4D18C SD:XBS104S14R,CIN=CL=4.7uF(Ceramic) CFB=620pF(Ceramic),RFB1=510kohm,RFB2 Sanken Electric
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GL-300

Abstract: CONTELEC B r o F OP1O ly n 47µF n e AVDD 22 µF PLAY (R1=5.1Kohm, R2=510Kohm C1 , RECLED PLAY (R1=5.1Kohm, R2=510Kohm C1=150pf is suggested) ACIN O AUDN 2K MIC , altering sampling frequency VDD AVDD OPT (R1=5.1Kohm, R2=510Kohm C1=150pf is suggested
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CH-2503 GL500 GL-300 CONTELEC GL300 GL-200 GL-400 GL100
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