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Part : LV5050NV-TLM-E Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 302,000 Best Price : $1.31 Price Each : $1.61
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50nV

Catalog Datasheet MFG & Type PDF Document Tags

741 gbw

Abstract: 8021C 50.000 0 8 3.0 -55. +125 J. F, T 50nV/VH7@10Hz 101ALN Guaranteed Noise 101A 2.0 75 50.000 0.8 3.0 -55. , +125 T 70nV/VHF@10Hz 301A General Purpose. Uncompensated 7.5 250 25.000 0.8 3.0 0. +70 P, T 50nV/VHz , 5.0 500 50,000 1.0 2 8 -55. +125 J, F, T 50nV/-s/Hz~ @10Hz 741CLN Guaranteed Noise 741C 6.0 500 25.000 1.0 2 8 0, +70 P, T 50nV/v/Hz («.10Hz 741K High Accuracy 741 0.5 50 50,000 1.0 2.8 0 to + 70 T
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108LN 301ALN 308LN 741LN 8021C 8022C 741 gbw Side Brazed Ceramic Dual-In-Line Packages 28 741 comparator 741C 741cl IH5101 LH2101A

lm372

Abstract: 455 KHz inputs, at carrier levels as low as 50nV r.m.s. Total dissipation only 8.4mW from +6V supply, usable with , =6V, lnput = 50mV 1=455 kHz 1.4 mA VCC=6V, lnput=50nV f =455 kHz 1.7 mA VCC = 15V lnput = 50mV f = 455
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LM372H 19754D LM372N lm372 455 KHz crystal 455 khz am receiver LM372 1975SB

MC3403

Abstract: MC3503 ® Av=l, RL-lOk, Vo-50mV ® Av-1, RL-lOk, Vo=50nV ® Av-1, RL-lOk, Vo=50nV
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MC3403 MC3503 avo mj

LTC6102

Abstract: current sense amplifier bolstered by a near zero guaranteed input offset drift of less than 50nV/°C and a guaranteed input bias , Offset Voltage: 10uV (Max) · Extremely Low Offset Drift: 50nV/°C (Max) · 4V to 60V Operation
Linear Technology
Original
LTC6102 current sense amplifier high side current sense amplifier sense amplifier ZERO DRIFT

Hall Effect Current Measurements

Abstract: 3 wire hall effect i as low as 50nV and sample resistances in excess of 1012. Rows LO R 3 + ­ 4 HI R , with
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Hall Effect Current Measurements 3 wire hall effect sc729 SC-720 bg101 triaxial 7078 7078-TRX-10 SC-72-0 SC-72-9 BG-10-1 7065-3Y-EW

LTC1047

Abstract: LTC1047C LTC1047 20M&, -f3 â  n-^v-, - 175 - LINEAR TECHNOLOGY â'¢mifätäxm 9A3] *7-ky USEE: 10 u V â'¢At)*7 -fe â â / MIE'®® K >) 7 h : 50nV/°C â'¢Â®g®ÌIEÌEf|:4.57~16V â'¢t^1 ; >?'JI]'®ii!:680Hztyp -t * > H y m &mm ® [«V//"no] ® BW=0. lHz~10Hz ® f0-10Hz ® VCH-Vsâ'"+2.7V ® Vs=±2. 375â'"+8V « flij tt Vs=±5V Ta=25'C TJflTbHtEE VoajäKPOT VoOTÃ"MSSgtt MiMjmm Ai] A^äS^HES®« llWA^igit ISMAilfiiji Aft^WEEm &1MSEBM mtiM-M fi|fS*»HW inni. m/t-Mi t-HHa-l- mm® mmm
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LTC1047C 0-10H RL-100 RL-10
Abstract: Voltage Drift 50nV/°C Minimum CMRR 110dB Minimum PSRR 110dB Single Supply Operation 4.75V to 16V , REFERRED) 200nV I Vs = ±5V Is = 150(iA 100nV 1 50nV/DIV fv l iI. j A A w 'f¥ F -
OCR Scan
LTC1051/53

NJM2125F

Abstract: ±18 6max 20max 0. ImiLX - - NJM2130F MTP5 ±2~±1S 1 1 80 - 0.5 50nV/Tfe(en) Single Low Noise NJM5534D/M , /SIP-8 ±2â'"±18 1 1 0.25 - 1.0 High Voltage NJM2147D/M DIP/DMP-8 + 8- + 2S 1.0 1 0.175 - 0.5 50nV
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NJM2125F NJM2904D/M/V/L NJM3404AD/M/V/L NJM3414AD/M/V/L NJM2132D/M/V/L NJM2119D/M

NJM2068D

Abstract: NJU7096D /DMP/SSOP-8 ±1~±18 6mai. 20m«. O.lmax. - - 1 fi m « NJM2130F MTP-5 ±2~±18 1 1 0.08 - 0.5 50nV , 6.0 10 3 m m t! NJM2I47D/M D1P/DMP-8 ±8~±28V 1 1 0.175 - 0.5 50nV/7HÏ(en) NJM2137M/V DMP/SSOP
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NJM2143R NJM2068D NJU7096D NJM082BD NJM082D SSOP14 njm4560d NJM324D/M/V DIP/DMP/SSOP-14 NJM2902N/M/V NJM3403AD/M/V NJM741D/M/V

ltc1047 applications

Abstract: CMRR 110dB urm LTC1047 TECHNOLOGY Dual Micropower Chopper Stabilized Operational Amplifier with Internal Capacitors F6DTUR6S â  No External Components Required â  Supply Current 80jxA â  Maximum Offset Voltage 10|xV â  Maximum Offset Voltage Drift 50nV/°C â  Minimum CMRR 110dB â  Minimum PSRR 110dB â  Single Supply Operation 4.75V to 16V â  Common Mode Range Includes GND â  Output Swings to , 50nV/DIV -100nV -200nV LTC1047 â'¢ TA07 2-298 0.1Hz-10Hz NOISE (INPUT REFERRED) i Vc = Â
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ltc1047 applications CMRR 110dB TC1047 LTC1043 LTC1047CN8 LTC1047CS ITC1047 LTC1D47

NJM082D

Abstract: njm3404D NJM2130F MTP-5 ±2±18 1 1 0.08 - 0.5 50nV/ Hz (en) NJM5534D/M DIP/DMP , NJM2097M DIP/DMP-14 50nV/ Hz (en) DIP/SSOP-14 ±1.35±6 1 20 2.27 200 45 DMP
New Japan Radio
Original
NJM2716F NJM2730F NJM3143R njm3404D njm4556 NJM4556AD NJM12904D/M/E/V/R/L NJM3404D/M/V/L NJM13404D/M/E/V/R/L NJM324D/M

NJM082BD

Abstract: NJM082D 0.5 50nV/ Hz (en) NJM5534D/M DIP/DMP-8 ±3±22 0.5 20 4.0 10 13 3.3nV , 2.6 - 50nV/ Hz (en) 50 NJM13600D/M/V NJM13700D/M DIP/DMP/SSOP-14 6.8nV/ Hz (en
New Japan Radio
Original
16 SSOP ssop-14 SSOP-8 njm2100 NJM4558DM NJM2114 NJM12902D/M/E/V DIP/DMP/EMP/SSOP-14 NJM13403D/M/E/V NJMOP-07D/M 7072D/M NJU7074D/M/V

LT010

Abstract: ltcfc Maximum Offset Voltage Drift 50nV/°C Minimum C M RR11 OdB Minimum PSRR 110dB Single Supply , ls = 1 5 M 100nV 50nV/DlV v* OSEC Wfl 1 w *w 1 I i -100nV -200nV 10 SEC
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LT010 ltcfc capacitors 475k LT01047

LTC2050

Abstract: 1K SOT23-4 -23 Package Maximum Offset Voltage: 5µV Maximum Offset Voltage Drift: 50nV/°C Noise: 1.5µVP-P (0.1Hz to
Linear Technology
Original
LTC2050 1K SOT23-4 Instrumentation Amplifiers sot23

sot-23 rks

Abstract: rks sot-23 rrimw FCRTURCS SOT-23 Package Maximum Offset Voltage: 5|iV Maximum Offset Voltage Drift: 50nV/°C Noise: 1.5|iVp.p (O.IHzto 10HzTyp) Voltage Gain: 130dB (Typ) PSRR: 130dB (Typ) CMRR: 130dB (Typ) Supply Current: 0.8mA (Typ) Single Supply Operation: 2.7V to 6V Extended Common Mode Input Range Output Swings Rail-to-Rail Overload Recovery Time: 2ms (Typ) Electrical Specifications Subject to Change _ LTC2050 Zero Drift O p e ra tio n a l A m p lifie r A u gu st 1999
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sot-23 rks rks sot-23
Abstract: % Low Differential Phase/Gain: 0.0170.01% 2pF Input Capacitance 5.0nV/VHz Input Referred Voltage Noise -
OCR Scan
MAX496 MAX497 AX496/MAX497 430MH 375MH 210MH
Abstract: Required Maximum Offset Voltage: 10µV Maximum Offset Voltage Drift: 50nV/°C Supply Current: 80µA , VS = ±5V IS = 150µA 100nV 50nV/DIV â'"100nV â'"200nV 0 TIME (SEC) 10 LTC1047 â Linear Technology
Original

LT1101A

Abstract: LT1102A AMPLIFIER) 0.5nV 50nV/°C 10pA 1.6 (xV Resistor Programmable Resistor Limited 0.001% Possible Resistor
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LT1101A LT1102A 10nv LTC1100A LT1101 LT1102 LTC1100CS

LT1047

Abstract: 25K147 Required Maximum Offset Voltage: 10µV Maximum Offset Voltage Drift: 50nV/°C Supply Current: 80µA , = 150µA 100nV 50nV/DIV ­100nV ­200nV 0 TIME (SEC) 10 LTC1047 · TA07 1047fa
Linear Technology
Original
LT1047 25K147 Absolute Value Circuit TPC010 LTC1047CSW

LTC2990

Abstract: LTC6240 to 100V, 105V Maximum (LTC6102HV) ±10µV Input Offset Maximum ±50nV/°C Input Offset Drift Maximum
Linear Technology
Original
LT1999 LTC6240 LTC2990 LT6106 LTC2050HV LTC2054HV LT1677 LTC6078 LTC6081
Abstract: inputs, at carrier levels as low as 50nV r.m.s. Total dissipation only 8.4mW from +6V supply, usable with , =6V, lnput = 50mV 1=455 kHz 1.4 mA VCC=6V, lnput=50nV f =455 kHz 1.7 mA VCC = 15V lnput = 50mV f = 455 -
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0068772-B

ma772tc

Abstract: ua772 bolstered by a near zero guaranteed input offset drift of less than 50nV/°C and a guaranteed input bias , Offset Voltage: 10uV (Max) · Extremely Low Offset Drift: 50nV/°C (Max) · 4V to 60V Operation
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ma772tc ua772 MA772 JUA772 772BM A772C MA772BC JA772LC A772RC

OP16BJ

Abstract: VOLTAGE: 25µV (max), G 100 LOW DRIFT: 0.1µV/°C, G 100 LOW NOISE: 50nV/Hz, G 100 HIGH CMRR: 100dB , temperature range, the INA333 also offers exceptionally low noise density (50nV/Hz) that extends down to dc , technique used by the INA333 results in reduced low frequency noise, typically only 50nV/Hz, (G = 100).
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OP16BJ OP-16 MIL-M-38510 OP-16AJ/883 OP-16BJ/883 OP-16BZ/883 OP-16CZ/883
Abstract: VOLTAGE = 5/iV OFFSET DRIFT = 50nV/°C OUTPUT 10k V|Nâ'"VW V(1S = W V0sMT = 50nV/°C GAIN = 10 FULL -
OCR Scan
OP-09/883 741-TYPE OP-09AY/883 OP-09ARC/883 MIL-M-385101 D0091-01E

SAR1500H3

Abstract: IAG080H2 ® Av=l, RL-lOk, Vo-50mV ® Av-1, RL-lOk, Vo=50nV ® Av-1, RL-lOk, Vo=50nV
Laser Components
Original
SAR1500H3 IAG080H2 IAG200 SAR500 SAR1500 SAT800 ABC550-04

E421 fet

Abstract: equivalent transistor e176 C, LOW NOISE: 50nV/âšHz, G ≥ 100 HIGH CMRR: 100dB (min), G ≥ 10 LOW INPUT BIAS CURRENT , temperature range, the INA333 also offers exceptionally low noise density (50nV/âšHz) that extends down to , auto-calibration technique used by the INA333 results in reduced low frequency noise, typically only 50nV/âšHz
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E421 fet equivalent transistor e176 J2N2608 2N4360 equivalent transistors E112 jfet e420 dual jfet
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